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BZV55B6V8 L0G BZV55B6V8 L0G Taiwan Semiconductor Corporation BZV55B2V4 SERIES_G2301.pdf Description: DIODE ZENER 6.8V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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BZV55B6V8 BZV55B6V8 Taiwan Semiconductor Corporation BZV55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 6.8V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
1N5399G 1N5399G Taiwan Semiconductor Corporation 1N5391G SERIES_G2309.pdf Description: DIODE STD 1000V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
3500+4.94 грн
Мінімальне замовлення: 3500 шт
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BZX79C47 A0G BZX79C47 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_F1804.pdf Description: DIODE ZENER 47V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
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BZX79C13 BZX79C13 Taiwan Semiconductor Corporation BZX79C2V0_2520SERIES_H2304-3228865.pdf Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товару немає в наявності
 Мінімальне замовлення: 20000 шт
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BZX79C13 A0G BZX79C13 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_H2304.pdf Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товару немає в наявності
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TS78L12ACY RMG TS78L12ACY RMG Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 12V 100MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): 12V
Control Features: Current Limit
PSRR: 42dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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1V5KE15CA 1V5KE15CA Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 12.8VWM 21.2V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
 Мінімальне замовлення: 1250 шт
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ESH2D ESH2D Taiwan Semiconductor Corporation ESH2B%20SERIES_J2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.01 грн
6000+9.15 грн
Мінімальне замовлення: 3000 шт
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ESH2D ESH2D Taiwan Semiconductor Corporation ESH2B%20SERIES_J2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
11+30.13 грн
13+24.51 грн
100+16.99 грн
500+12.45 грн
1000+10.12 грн
Мінімальне замовлення: 11 шт
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ESH2D R5G ESH2D R5G Taiwan Semiconductor Corporation ESH2B%20SERIES_J2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товару немає в наявності
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ESH2D R5G ESH2D R5G Taiwan Semiconductor Corporation ESH2B%20SERIES_J2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 787 шт:
термін постачання 21-31 дні (днів)
6+56.30 грн
10+47.49 грн
Мінімальне замовлення: 6 шт
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ESH2B ESH2B Taiwan Semiconductor Corporation ESH2B%20SERIES_J2102.pdf Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
 Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
ESH2C ESH2C Taiwan Semiconductor Corporation ESH2B SERIES_J2102.pdf Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+8.82 грн
6000+7.81 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ESH2BA ESH2BA Taiwan Semiconductor Corporation ESH2BA%20SERIES_F2102.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
ESH2CA ESH2CA Taiwan Semiconductor Corporation ESH2BA%20SERIES_F2102.pdf Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
ESH2DA ESH2DA Taiwan Semiconductor Corporation ESH2BA%20SERIES_F2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
BZX55C11 BZX55C11 Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 11V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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BZX55C11 A0G BZX55C11 A0G Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 11V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
товару немає в наявності
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RS3D RS3D Taiwan Semiconductor Corporation pdf.php?pn=RS3D Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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RS3DB-T RS3DB-T Taiwan Semiconductor Corporation RS3DB-T SERIES_C2102.pdf Description: 150NS, 3A, 200V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
RS3DH RS3DH Taiwan Semiconductor Corporation pdf.php?pn=RS3DH Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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RS3DHM6G RS3DHM6G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3DHR7G RS3DHR7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3D R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3D R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3D R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3D M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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BZX55C2V7 A0G BZX55C2V7 A0G Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товару немає в наявності
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TS78L05CX TS78L05CX Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 5V 100MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
 Мінімальне замовлення: 12000 шт
В кошику  од. на суму  грн.
UF1GLW UF1GLW Taiwan Semiconductor Corporation UF1DLW SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+4.97 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
UF1GLW RVG UF1GLW RVG Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
 Мінімальне замовлення: 12000 шт
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UF1GLW RVG UF1GLW RVG Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
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UF1G R1G UF1G R1G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF1GHR1G UF1GHR1G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF1G A0G UF1G A0G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF1GHA0G UF1GHA0G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF1G B0G UF1G B0G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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UF1GHB0G UF1GHB0G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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SF1604GH SF1604GH Taiwan Semiconductor Corporation SF1601G SERIES_I2104.pdf Description: DIODE ARRAY GP 200V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
3+126.87 грн
10+77.43 грн
50+58.06 грн
100+48.60 грн
500+38.25 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SF1606GH SF1606GH Taiwan Semiconductor Corporation SF1601G SERIES_I2104.pdf Description: DIODE ARRAY GP 400V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+124.49 грн
10+75.97 грн
50+56.98 грн
100+47.72 грн
500+37.62 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SF1606PTH SF1606PTH Taiwan Semiconductor Corporation SF1601PT SERIES_G2103.pdf Description: DIODE ARRAY GP 400V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
2+195.06 грн
10+121.18 грн
50+92.47 грн
100+78.08 грн
500+62.81 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SR1060H SR1060H Taiwan Semiconductor Corporation SR1020%20SERIES_L2104.pdf Description: DIODE ARR SCHOTT 60V 10A TO220AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
P6KE130A P6KE130A Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 111VWM 179VC DO15
Current - Peak Pulse (10/1000µs): 3.4A
Applications: General Purpose
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 124V
Unidirectional Channels: 1
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 111V
товару немає в наявності
 Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
P6KE130A P6KE130A Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 111VWM 179VC DO15
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 124V
Unidirectional Channels: 1
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 111V
Current - Peak Pulse (10/1000µs): 3.4A
Applications: General Purpose
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
на замовлення 2839 шт:
термін постачання 21-31 дні (днів)
8+39.65 грн
14+23.36 грн
100+14.87 грн
500+10.50 грн
1000+9.38 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
TSM9926DCS RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 20V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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SMCJ43 SMCJ43 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 43VWM 76.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 76.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SMCJ43 SMCJ43 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 43VWM 76.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 76.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
5+68.98 грн
10+41.31 грн
100+26.87 грн
500+19.39 грн
1000+17.51 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
SMCJ43AH SMCJ43AH Taiwan Semiconductor Corporation SMCJH SERIES_A2102.pdf Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SMCJ43H SMCJ43H Taiwan Semiconductor Corporation SMCJH SERIES_A2102.pdf Description: TVS DIODE 43VWM 76.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 76.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HER102G HER102G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 4702 шт:
термін постачання 21-31 дні (днів)
11+29.34 грн
18+17.56 грн
100+11.04 грн
500+7.71 грн
1000+6.86 грн
2000+6.14 грн
Мінімальне замовлення: 11 шт
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BZV55C11 L0G BZV55C11 L0G Taiwan Semiconductor Corporation BZV55C2V4%20SERIES_H2301.pdf Description: DIODE ZENER 11V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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BZX85C6V8 R0G BZX85C6V8 R0G Taiwan Semiconductor Corporation BZX85C3V3 SERIES_H2301.pdf Description: DIODE ZENER 6.8V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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BZX85C6V8 BZX85C6V8 Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 6.8V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BZX85C6V8 A0G BZX85C6V8 A0G Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_G1606.pdf Description: DIODE ZENER 6.8V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
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BZX85C8V2 R0G BZX85C8V2 R0G Taiwan Semiconductor Corporation BZX85C3V3 SERIES_H2301.pdf Description: DIODE ZENER 8.2V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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BZX85C8V2 BZX85C8V2 Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 8.2V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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BZX85C8V2 A0G BZX85C8V2 A0G Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 8.2V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
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BZX85C4V3 R0G BZX85C4V3 R0G Taiwan Semiconductor Corporation BZX85C3V3 SERIES_H2301.pdf Description: DIODE ZENER 4.3V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZX85C4V3 A0G BZX85C4V3 A0G Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_G1606.pdf Description: DIODE ZENER 4.3V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
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BZV55B6V8 L0G BZV55B2V4 SERIES_G2301.pdf
BZV55B6V8 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
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Мінімальне замовлення: 10000 шт
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BZV55B6V8 BZV55B2V4%20SERIES_G2301.pdf
BZV55B6V8
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
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1N5399G 1N5391G SERIES_G2309.pdf
1N5399G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 1000V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3500+4.94 грн
Мінімальне замовлення: 3500 шт
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BZX79C47 A0G BZX79C2V0%20SERIES_F1804.pdf
BZX79C47 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
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BZX79C13 BZX79C2V0_2520SERIES_H2304-3228865.pdf
BZX79C13
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товару немає в наявності
Мінімальне замовлення: 20000 шт
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BZX79C13 A0G BZX79C2V0%20SERIES_H2304.pdf
BZX79C13 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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TS78L12ACY RMG TS78L00_M2206.pdf
TS78L12ACY RMG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 12V 100MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): 12V
Control Features: Current Limit
PSRR: 42dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 1000 шт
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1V5KE15CA 1V5KE SERIES_D2112.pdf
1V5KE15CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
ESH2D ESH2B%20SERIES_J2102.pdf
ESH2D
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+10.01 грн
6000+9.15 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ESH2D ESH2B%20SERIES_J2102.pdf
ESH2D
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
11+30.13 грн
13+24.51 грн
100+16.99 грн
500+12.45 грн
1000+10.12 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
ESH2D R5G ESH2B%20SERIES_J2102.pdf
ESH2D R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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ESH2D R5G ESH2B%20SERIES_J2102.pdf
ESH2D R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 787 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+56.30 грн
10+47.49 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
ESH2B ESH2B%20SERIES_J2102.pdf
ESH2B
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
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ESH2C ESH2B SERIES_J2102.pdf
ESH2C
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+8.82 грн
6000+7.81 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ESH2BA ESH2BA%20SERIES_F2102.pdf
ESH2BA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 15000 шт
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ESH2CA ESH2BA%20SERIES_F2102.pdf
ESH2CA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 15000 шт
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ESH2DA ESH2BA%20SERIES_F2102.pdf
ESH2DA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 15000 шт
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BZX55C11 BZX55C2V0%20SERIES_E2301.pdf
BZX55C11
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
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BZX55C11 A0G BZX55C2V0%20SERIES_E2301.pdf
BZX55C11 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
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RS3D pdf.php?pn=RS3D
RS3D
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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RS3DB-T RS3DB-T SERIES_C2102.pdf
RS3DB-T
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 3A, 200V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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RS3DH pdf.php?pn=RS3DH
RS3DH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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RS3DHM6G RS3A%20SERIES_L2102.pdf
RS3DHM6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3DHR7G RS3A%20SERIES_L2102.pdf
RS3DHR7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3D R6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3D R7
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3D R6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3D M6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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BZX55C2V7 A0G BZX55C2V0%20SERIES_E2301.pdf
BZX55C2V7 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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TS78L05CX TS78L00_M2206.pdf
TS78L05CX
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 12000 шт
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UF1GLW UF1DLW SERIES_C2103.pdf
UF1GLW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10000+4.97 грн
Мінімальне замовлення: 10000 шт
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UF1GLW RVG
UF1GLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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Мінімальне замовлення: 12000 шт
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UF1GLW RVG
UF1GLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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UF1G R1G UF1A%20SERIES_G2104.pdf
UF1G R1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF1GHR1G UF1A%20SERIES_G2104.pdf
UF1GHR1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF1G A0G UF1A%20SERIES_G2104.pdf
UF1G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF1GHA0G UF1A%20SERIES_G2104.pdf
UF1GHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF1G B0G UF1A%20SERIES_G2104.pdf
UF1G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF1GHB0G UF1A%20SERIES_G2104.pdf
UF1GHB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SF1604GH SF1601G SERIES_I2104.pdf
SF1604GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+126.87 грн
10+77.43 грн
50+58.06 грн
100+48.60 грн
500+38.25 грн
Мінімальне замовлення: 3 шт
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SF1606GH SF1601G SERIES_I2104.pdf
SF1606GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+124.49 грн
10+75.97 грн
50+56.98 грн
100+47.72 грн
500+37.62 грн
Мінімальне замовлення: 3 шт
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SF1606PTH SF1601PT SERIES_G2103.pdf
SF1606PTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+195.06 грн
10+121.18 грн
50+92.47 грн
100+78.08 грн
500+62.81 грн
Мінімальне замовлення: 2 шт
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SR1060H SR1020%20SERIES_L2104.pdf
SR1060H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 10A TO220AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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Мінімальне замовлення: 1000 шт
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P6KE130A P6KE SERIES_P2203.pdf
P6KE130A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO15
Current - Peak Pulse (10/1000µs): 3.4A
Applications: General Purpose
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 124V
Unidirectional Channels: 1
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 111V
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Мінімальне замовлення: 3500 шт
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P6KE130A P6KE SERIES_P2203.pdf
P6KE130A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO15
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 124V
Unidirectional Channels: 1
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 111V
Current - Peak Pulse (10/1000µs): 3.4A
Applications: General Purpose
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
на замовлення 2839 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8+39.65 грн
14+23.36 грн
100+14.87 грн
500+10.50 грн
1000+9.38 грн
Мінімальне замовлення: 8 шт
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TSM9926DCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 20V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
Мінімальне замовлення: 5000 шт
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SMCJ43 SMCJ SERIES_S2104.pdf
SMCJ43
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 76.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 76.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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Мінімальне замовлення: 3000 шт
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SMCJ43 SMCJ SERIES_S2104.pdf
SMCJ43
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 76.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 76.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+68.98 грн
10+41.31 грн
100+26.87 грн
500+19.39 грн
1000+17.51 грн
Мінімальне замовлення: 5 шт
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SMCJ43AH SMCJH SERIES_A2102.pdf
SMCJ43AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SMCJ43H SMCJH SERIES_A2102.pdf
SMCJ43H
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 76.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 76.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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HER102G HER101G SERIES_L2104.pdf
HER102G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 4702 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
11+29.34 грн
18+17.56 грн
100+11.04 грн
500+7.71 грн
1000+6.86 грн
2000+6.14 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
BZV55C11 L0G BZV55C2V4%20SERIES_H2301.pdf
BZV55C11 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
BZX85C6V8 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C6V8 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BZX85C6V8 BZX85C3V3%20SERIES_H2301.pdf
BZX85C6V8
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BZX85C6V8 A0G BZX85C3V3%20SERIES_G1606.pdf
BZX85C6V8 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
товару немає в наявності
В кошику  од. на суму  грн.
BZX85C8V2 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C8V2 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BZX85C8V2 BZX85C3V3%20SERIES_H2301.pdf
BZX85C8V2
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BZX85C8V2 A0G BZX85C3V3%20SERIES_H2301.pdf
BZX85C8V2 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
BZX85C4V3 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C4V3 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
BZX85C4V3 A0G BZX85C3V3%20SERIES_G1606.pdf
BZX85C4V3 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
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