Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25554) > Сторінка 360 з 426
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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HER155G-T | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1.5A DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||
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HER153G-T | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 1.5A DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||
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HER152G-T | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 1.5A DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||
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HER154G-T | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 300V 1.5A DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||
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HER151GH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 50V 1.5A DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||
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HER152GH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 1.5A DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||
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HER153GH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 1.5A DO204ACQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 35pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||
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MMSZ5251B RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 500MW SOD123FTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 29 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 17 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5251B RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 500MW SOD123FTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 29 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 17 V |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
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SMCJ26 | Taiwan Semiconductor Corporation |
Description: 1500W, 32.1V, 10%, UNIDIRECTIONAPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 46.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMCJ26 | Taiwan Semiconductor Corporation |
Description: 1500W, 32.1V, 10%, UNIDIRECTIONAPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 46.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ZM4729A L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.6V 1W MELFCurrent - Reverse Leakage @ Vr: 100 µA @ 1 V Power - Max: 1 W Supplier Device Package: MELF Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 3.6 V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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ZM4729A | Taiwan Semiconductor Corporation |
Description: MELF, 1000MW, 5%, SMALL SIGNAL ZCurrent - Reverse Leakage @ Vr: 100 µA @ 1 V Power - Max: 1 W Supplier Device Package: MELF Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 3.6 V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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SRAS2040 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 20A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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SRAS2040 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 20A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 1107 шт: термін постачання 21-31 дні (днів) |
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SRA2060H | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 20A TO220AC Current - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 20A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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1N4936G-K | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A DO204ALCurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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P4KE33CH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 26.8VWM 47.7V DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 8.8A Voltage - Reverse Standoff (Typ): 26.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Voltage - Clamping (Max) @ Ipp: 47.7V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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P4KE33C | Taiwan Semiconductor Corporation |
Description: TVS DIODE 26.8VWM 47.7V DO204ALPackaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.8A Voltage - Reverse Standoff (Typ): 26.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Voltage - Clamping (Max) @ Ipp: 47.7V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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TS35P06G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 35A TS-6PPackaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 1198 шт: термін постачання 21-31 дні (днів) |
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RSFKL | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||
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RSFKLH | Taiwan Semiconductor Corporation |
Description: 500NS, 0.5A, 800V, FAST RECOVERYQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||
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RSFKLHMHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||
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RSFKL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||
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RSFKL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKLHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3600 шт В кошику од. на суму грн. | ||||||||||
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RSFKL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKLHRHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKL MHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKLHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKL MTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAMounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKL RQG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAPackage / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKLHMQG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKLHMTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKLHRQG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMASupplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKLHRTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKLHRFG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAMounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKL RUG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKLHRUG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSFKLHRVG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 500MA SUB SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMSZ4699 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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MMSZ4699 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MBR20H100CTH | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 100V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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MUR840 | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 991 шт: термін постачання 21-31 дні (днів) |
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BZX79B8V2 | Taiwan Semiconductor Corporation |
Description: DO-35, 500MW, 2%, SMALL SIGNAL ZTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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BZX79B8V2 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 500MW DO35Tolerance: ±2% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 0.7 µA @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMB10J17AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17VWM 27.6VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 36.2A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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SRF1040H | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 40V 10A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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SRF1030H | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 30V 10A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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SRF1020H | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 20V 10A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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SRF1030 | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 30V 10A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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SRF1050H | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 50V 10A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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SRF1020 | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 20V 10A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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SRF1050 | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 50V 10A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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SRF1090 | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 90V 10A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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SRF10200H | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTTKY 200V ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| HER155G-T |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| HER153G-T |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| HER152G-T |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| HER154G-T |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE STANDARD 300V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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Мінімальне замовлення: 3500 шт
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| HER151GH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE STANDARD 50V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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Мінімальне замовлення: 3500 шт
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| HER152GH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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Мінімальне замовлення: 3500 шт
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| HER153GH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1.5A DO204AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 200V 1.5A DO204AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
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| MMSZ5251B RHG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Description: DIODE ZENER 22V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.13 грн |
| MMSZ5251B RHG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Description: DIODE ZENER 22V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.50 грн |
| 33+ | 9.18 грн |
| 100+ | 5.66 грн |
| 500+ | 3.88 грн |
| 1000+ | 3.42 грн |
| SMCJ26 |
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Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 32.1V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: 1500W, 32.1V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.43 грн |
| SMCJ26 |
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Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 32.1V, 10%, UNIDIRECTIONA
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: 1500W, 32.1V, 10%, UNIDIRECTIONA
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.99 грн |
| 10+ | 48.43 грн |
| 100+ | 37.68 грн |
| 500+ | 29.96 грн |
| 1000+ | 24.41 грн |
| ZM4729A L0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 1W MELF
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1 W
Supplier Device Package: MELF
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 3.6V 1W MELF
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1 W
Supplier Device Package: MELF
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ZM4729A |
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Виробник: Taiwan Semiconductor Corporation
Description: MELF, 1000MW, 5%, SMALL SIGNAL Z
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1 W
Supplier Device Package: MELF
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: MELF, 1000MW, 5%, SMALL SIGNAL Z
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1 W
Supplier Device Package: MELF
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SRAS2040 |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 34.77 грн |
| SRAS2040 |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 1107 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.83 грн |
| 10+ | 82.90 грн |
| 100+ | 55.92 грн |
| SRA2060H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 20A TO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 1N4936G-K |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| P4KE33CH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26.8VWM 47.7V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26.8VWM 47.7V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| P4KE33C |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26.8VWM 47.7V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 26.8VWM 47.7V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TS35P06G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1198 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.15 грн |
| 15+ | 116.06 грн |
| 105+ | 85.43 грн |
| 510+ | 65.16 грн |
| 1005+ | 60.32 грн |
| RSFKL |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 20000 шт
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| RSFKLH |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 0.5A, 800V, FAST RECOVERY
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Description: 500NS, 0.5A, 800V, FAST RECOVERY
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| RSFKLHMHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| RSFKL RVG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 12000 шт
В кошику
од. на суму грн.
| RSFKL RVG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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| RSFKLHR3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3600 шт
В кошику
од. на суму грн.
| RSFKL RHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| RSFKLHRHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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| RSFKL M2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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В кошику
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| RSFKL MHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| RSFKLHM2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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| RSFKL MTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GP 800V 500MA SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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| RSFKL RQG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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В кошику
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| RSFKL RTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE GP 800V 500MA SUB SMA
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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од. на суму грн.
| RSFKLHMQG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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| RSFKLHMTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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| RSFKLHRQG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE GP 800V 500MA SUB SMA
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
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| RSFKLHRTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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| RSFKL R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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| RSFKL RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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| RSFKLHRFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GP 800V 500MA SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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| RSFKL RUG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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| RSFKLHRUG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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| RSFKLHRVG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 500MA SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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| MMSZ4699 RHG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
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Мінімальне замовлення: 3000 шт
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| MMSZ4699 RHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.40 грн |
| 39+ | 7.76 грн |
| 100+ | 3.29 грн |
| 500+ | 2.73 грн |
| 1000+ | 2.32 грн |
| MBR20H100CTH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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Мінімальне замовлення: 1000 шт
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| MUR840 |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 991 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.84 грн |
| 10+ | 53.13 грн |
| 100+ | 44.40 грн |
| 500+ | 32.80 грн |
| BZX79B8V2 |
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Виробник: Taiwan Semiconductor Corporation
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
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Мінімальне замовлення: 10000 шт
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| BZX79B8V2 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 0.7 µA @ 5 V
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 0.7 µA @ 5 V
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| SMB10J17AH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 6000 шт
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| SRF1040H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 40V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 40V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| SRF1030H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| SRF1020H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 20V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 20V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| SRF1030 |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| SRF1050H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 50V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 50V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SRF1020 |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 20V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE ARR SCHOT 20V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SRF1050 |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 50V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE ARR SCHOT 50V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SRF1090 |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 90V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE ARR SCHOT 90V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| SRF10200H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.


















