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SR103HR0G SR103HR0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 30V 1A DO204AL
товар відсутній
SR104 R0G SR104 R0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 40V 1A DO204AL
товар відсутній
SR104HR0G SR104HR0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 40V 1A DO204AL
товар відсутній
SR105 R0G SR105 R0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
товар відсутній
SR105HR0G SR105HR0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
товар відсутній
SR106 R0G SR106 R0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 60V 1A DO204AL
товар відсутній
SR106HR0G SR106HR0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 60V 1A DO204AL
товар відсутній
SR109 R0G SR109 R0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 90V 1A DO204AL
товар відсутній
SR109HR0G SR109HR0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 90V 1A DO204AL
товар відсутній
SR110 R0G SR110 R0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 100V 1A DO204AL
товар відсутній
SR110HR0G SR110HR0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 100V 1A DO204AL
товар відсутній
UF1MHR0G UF1MHR0G Taiwan Semiconductor Corporation UF1A%20SERIES_F14.pdf Description: DIODE GEN PURP 1A DO204AL
товар відсутній
UF4001 R0G UF4001 R0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
UF4001HR0G UF4001HR0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4002 R0G UF4002 R0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
UF4002HR0G UF4002HR0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4003 R0G UF4003 R0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
UF4003HR0G UF4003HR0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4004 R0G UF4004 R0G Taiwan Semiconductor Corporation UF4001%20SERIES_N1705.pdf Description: DIODE GEN PURP 400V 1A DO204AL
товар відсутній
UF4004HR0G UF4004HR0G Taiwan Semiconductor Corporation UF4001%20SERIES_N1705.pdf Description: DIODE GEN PURP 400V 1A DO204AL
товар відсутній
UF4006 R0G UF4006 R0G Taiwan Semiconductor Corporation UF4001%20SERIES_N1705.pdf Description: DIODE GEN PURP 800V 1A DO204AL
товар відсутній
UF4006HR0G UF4006HR0G Taiwan Semiconductor Corporation UF4001%20SERIES_N1705.pdf Description: DIODE GEN PURP 800V 1A DO204AL
товар відсутній
BAV101 L1G BAV101 L1G Taiwan Semiconductor Corporation BAV101%20SERIES_D1610.pdf Description: DIODE GP 250V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BAV103 L1G BAV103 L1G Taiwan Semiconductor Corporation Description: DIODE GP 250V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BZS55B24 RXG Taiwan Semiconductor Corporation BZS55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 24V 500MW 1206
товар відсутній
BZS55B2V4 RXG Taiwan Semiconductor Corporation BZS55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 2.4V 500MW 1206
товар відсутній
BZS55B30 RXG Taiwan Semiconductor Corporation BZS55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 30V 500MW 1206
товар відсутній
BZS55B33 RXG Taiwan Semiconductor Corporation BZS55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 33V 500MW 1206
товар відсутній
BZS55B7V5 RXG Taiwan Semiconductor Corporation BZS55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 7.5V 500MW 1206
товар відсутній
BZS55C10 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 10V 500MW 1206
товар відсутній
BZS55C11 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 11V 500MW 1206
товар відсутній
BZS55C12 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 12V 500MW 1206
товар відсутній
BZS55C13 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 13V 500MW 1206
товар відсутній
BZS55C15 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 15V 500MW 1206
товар відсутній
BZS55C16 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 16V 500MW 1206
товар відсутній
BZS55C18 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 18V 500MW 1206
товар відсутній
BZS55C20 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 20V 500MW 1206
товар відсутній
BZS55C22 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 22V 500MW 1206
товар відсутній
BZS55C24 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 24V 500MW 1206
товар відсутній
BZS55C27 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 27V 500MW 1206
товар відсутній
BZS55C2V4 RXG BZS55C2V4 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 2.4V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
BZS55C2V7 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 2.7V 500MW 1206
товар відсутній
BZS55C30 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 30V 500MW 1206
товар відсутній
BZS55C33 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 33V 500MW 1206
товар відсутній
BZS55C36 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 36V 500MW 1206
товар відсутній
BZS55C3V0 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 3V 500MW 1206
товар відсутній
BZS55C3V3 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 3.3V 500MW 1206
товар відсутній
BZS55C3V6 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 3.6V 500MW 1206
товар відсутній
BZS55C3V9 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 3.9V 500MW 1206
товар відсутній
BZS55C4V3 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 4.3V 500MW 1206
товар відсутній
BZS55C4V7 RXG BZS55C4V7 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 4.7V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
товар відсутній
BZS55C5V1 RXG BZS55C5V1 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 5.1V 500MW 1206
товар відсутній
BZS55C5V6 RXG BZS55C5V6 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 5.6V 500MW 1206
товар відсутній
BZS55C6V2 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 6.2V 500MW 1206
товар відсутній
BZS55C6V8 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 6.8V 500MW 1206
товар відсутній
BZS55C7V5 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 7.5V 500MW 1206
товар відсутній
BZS55C8V2 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 8.2V 500MW 1206
товар відсутній
BZS55C9V1 RXG BZS55C9V1 RXG Taiwan Semiconductor Corporation BZS55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 9.1V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
товар відсутній
BZT55B16 L1G BZT55B16 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 16V 500MW MINI MELF
товар відсутній
BZT55B75 L1G BZT55B75 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 75V 500MW MINI MELF
товар відсутній
SR103HR0G SR102%20SERIES_F13.pdf
SR103HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO204AL
товар відсутній
SR104 R0G SR102%20SERIES_G2104.pdf
SR104 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A DO204AL
товар відсутній
SR104HR0G SR102%20SERIES_G2104.pdf
SR104HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A DO204AL
товар відсутній
SR105 R0G SR102%20SERIES_G2104.pdf
SR105 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
товар відсутній
SR105HR0G SR102%20SERIES_G2104.pdf
SR105HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
товар відсутній
SR106 R0G SR102%20SERIES_F13.pdf
SR106 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A DO204AL
товар відсутній
SR106HR0G SR102%20SERIES_F13.pdf
SR106HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A DO204AL
товар відсутній
SR109 R0G SR102%20SERIES_F13.pdf
SR109 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A DO204AL
товар відсутній
SR109HR0G SR102%20SERIES_F13.pdf
SR109HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A DO204AL
товар відсутній
SR110 R0G SR102%20SERIES_F13.pdf
SR110 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A DO204AL
товар відсутній
SR110HR0G SR102%20SERIES_F13.pdf
SR110HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A DO204AL
товар відсутній
UF1MHR0G UF1A%20SERIES_F14.pdf
UF1MHR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
товар відсутній
UF4001 R0G UF4001%20SERIES_P2104.pdf
UF4001 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
UF4001HR0G UF4001%20SERIES_P2104.pdf
UF4001HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4002 R0G UF4001%20SERIES_P2104.pdf
UF4002 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
UF4002HR0G UF4001%20SERIES_P2104.pdf
UF4002HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4003 R0G UF4001%20SERIES_P2104.pdf
UF4003 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
UF4003HR0G UF4001%20SERIES_P2104.pdf
UF4003HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4004 R0G UF4001%20SERIES_N1705.pdf
UF4004 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
товар відсутній
UF4004HR0G UF4001%20SERIES_N1705.pdf
UF4004HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
товар відсутній
UF4006 R0G UF4001%20SERIES_N1705.pdf
UF4006 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
товар відсутній
UF4006HR0G UF4001%20SERIES_N1705.pdf
UF4006HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
товар відсутній
BAV101 L1G BAV101%20SERIES_D1610.pdf
BAV101 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 250V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BAV103 L1G
BAV103 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 250V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BZS55B24 RXG BZS55B2V4%20SERIES_C1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW 1206
товар відсутній
BZS55B2V4 RXG BZS55B2V4%20SERIES_C1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW 1206
товар відсутній
BZS55B30 RXG BZS55B2V4%20SERIES_C1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW 1206
товар відсутній
BZS55B33 RXG BZS55B2V4%20SERIES_C1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW 1206
товар відсутній
BZS55B7V5 RXG BZS55B2V4%20SERIES_C1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW 1206
товар відсутній
BZS55C10 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW 1206
товар відсутній
BZS55C11 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW 1206
товар відсутній
BZS55C12 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW 1206
товар відсутній
BZS55C13 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW 1206
товар відсутній
BZS55C15 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW 1206
товар відсутній
BZS55C16 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW 1206
товар відсутній
BZS55C18 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW 1206
товар відсутній
BZS55C20 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW 1206
товар відсутній
BZS55C22 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 1206
товар відсутній
BZS55C24 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW 1206
товар відсутній
BZS55C27 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW 1206
товар відсутній
BZS55C2V4 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C2V4 RXG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
BZS55C2V7 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW 1206
товар відсутній
BZS55C30 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW 1206
товар відсутній
BZS55C33 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW 1206
товар відсутній
BZS55C36 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW 1206
товар відсутній
BZS55C3V0 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW 1206
товар відсутній
BZS55C3V3 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW 1206
товар відсутній
BZS55C3V6 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW 1206
товар відсутній
BZS55C3V9 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW 1206
товар відсутній
BZS55C4V3 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW 1206
товар відсутній
BZS55C4V7 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C4V7 RXG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
товар відсутній
BZS55C5V1 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C5V1 RXG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 500MW 1206
товар відсутній
BZS55C5V6 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C5V6 RXG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW 1206
товар відсутній
BZS55C6V2 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW 1206
товар відсутній
BZS55C6V8 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW 1206
товар відсутній
BZS55C7V5 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW 1206
товар відсутній
BZS55C8V2 RXG BZS55C2V4%20SERIES_D1612.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW 1206
товар відсутній
BZS55C9V1 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C9V1 RXG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
товар відсутній
BZT55B16 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B16 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW MINI MELF
товар відсутній
BZT55B75 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B75 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW MINI MELF
товар відсутній
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