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BZT52C3V0 RHG BZT52C3V0 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 9µA
Zener current: 5mA
на замовлення 990 шт:
термін постачання 21-30 дні (днів)
105+4.09 грн
145+2.77 грн
250+2.49 грн
340+2.48 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
SMBJ9.0A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 40A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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BZX85C36 R0G BZX85C36 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 36V; 8mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 36V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 8mA
Leakage current: 0.5µA
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
60+7.59 грн
100+5.94 грн
200+4.75 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
BZT52C3V9 RHG BZT52C3V9 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
на замовлення 720 шт:
термін постачання 21-30 дні (днів)
90+4.86 грн
125+3.28 грн
250+2.70 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
P4KE30A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 28.5V; 10A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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TS19377CS RLG TS19377CS RLG TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C90FC09C714A18&compId=TS19377.pdf?ci_sign=57819565751f15998328241dbb72b563cdd821da Category: LED drivers
Description: IC: driver; buck; LED driver; SOP8; 2A; Ch: 1; 3.6÷23VDC
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: SOP8
Output current: 2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 3.6...23V DC
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SF34G-A TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
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ABS15J ABS15J TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C8613CD40AF40D6&compId=ABS15J-ABS15M.pdf?ci_sign=6b1ac16902f343bc2f4096adca655b158cb1efa8 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS
Case: ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
9+50.29 грн
14+28.41 грн
72+12.98 грн
198+12.27 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TSM170N06CH X0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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P4KE39CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1V; 7.7A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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BZX55C6V2 R0G BZX55C6V2 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1440 шт:
термін постачання 21-30 дні (днів)
30+14.49 грн
42+9.50 грн
100+5.65 грн
250+4.54 грн
406+2.29 грн
1116+2.16 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BZX55C6V2 R0 BZX55C6V2 R0 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 280 шт:
термін постачання 21-30 дні (днів)
118+3.64 грн
163+2.43 грн
Мінімальне замовлення: 118
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SMBJ6V0CA SMBJ6V0CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 61A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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SMBJ6V0A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 61A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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MBS10 RCG MBS10 RCG TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2DFC048155A60C4&compId=MBS2.pdf?ci_sign=24fcdfa399f09bcf58aa8aed2e408f06cf40a704 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.8A
Max. forward impulse current: 35A
Max. forward voltage: 1V
Case: MBS; TO269AA
Max. off-state voltage: 1kV
на замовлення 305 шт:
термін постачання 21-30 дні (днів)
25+19.09 грн
30+14.25 грн
90+10.84 грн
240+10.21 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SFAF2006GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 20A; ITO220AC; automotive industry
Mounting: THT
Case: ITO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 20A
Max. off-state voltage: 0.4kV
Application: automotive industry
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SFAF2008GH TAIWAN SEMICONDUCTOR pdf.php?pn=SFAF2008GH Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; ITO220AC; automotive industry
Mounting: THT
Case: ITO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 20A
Max. off-state voltage: 0.6kV
Application: automotive industry
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SFAF2004GH TAIWAN SEMICONDUCTOR SFAF2001G SERIES_J2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; ITO220AC; automotive industry
Mounting: THT
Case: ITO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 20A
Max. off-state voltage: 200V
Application: automotive industry
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SMAJ15CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf 824501151.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ15CA00S0XM.pdf 5272_SMAJ15CA.pdf SMAJ15CA%20SMA%28DO-214AC%29.PDF SMAJx.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ%20Series%20Rev-1.pdf SMAJ SERIES_U2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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MUR860 MUR860 TAIWAN SEMICONDUCTOR mur820-d.pdf MUR820 SERIES_K2103.pdf mur860.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
5+90.35 грн
10+70.68 грн
31+30.95 грн
Мінімальне замовлення: 5
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BZX55C8V2 R0G BZX55C8V2 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)
115+3.75 грн
140+2.87 грн
410+2.29 грн
1120+2.16 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
BZT52C6V8 RHG BZT52C6V8 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 1.8µA
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
105+4.09 грн
145+2.77 грн
250+2.49 грн
340+2.48 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C6V2 RHG BZT52C6V2 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
на замовлення 465 шт:
термін постачання 21-30 дні (днів)
56+7.67 грн
74+5.38 грн
104+3.84 грн
314+2.96 грн
Мінімальне замовлення: 56
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GBPC3508 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9BF18ED45B00D6&compId=GBPC15_25_35_ser.pdf?ci_sign=4015d9a11799d5326d0aa6ccd83b22a7d7d97bb5 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
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GBPC3508W TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9BF18ED45B00D6&compId=GBPC15_25_35_ser.pdf?ci_sign=4015d9a11799d5326d0aa6ccd83b22a7d7d97bb5 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
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BZX85C30 R0G BZX85C30 R0G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CC61FE6CB340C4&compId=BZX85C10-R0G.pdf?ci_sign=e43853bdcd2479505b5dc972981cb480cc6003af Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 30V; 8mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 30V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 8mA
Kind of package: reel; tape
на замовлення 1450 шт:
термін постачання 21-30 дні (днів)
36+11.93 грн
46+8.63 грн
100+4.88 грн
395+2.36 грн
1084+2.23 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
TSM05N03CW RPG TSM05N03CW RPG TAIWAN SEMICONDUCTOR pdf.php?pn=TSM05N03CW Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 131 шт:
термін постачання 21-30 дні (днів)
8+56.26 грн
11+36.09 грн
25+27.31 грн
36+26.12 грн
98+24.69 грн
100+24.06 грн
Мінімальне замовлення: 8
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TSM051N04LCP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tape
Kind of channel: enhancement
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SMAJ26AH TAIWAN SEMICONDUCTOR SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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BZT52B10S RRG BZT52B10S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S%20series_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; 5mA; SMD; reel,tape; SOD323F; single diode
Case: SOD323F
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.18µA
Zener current: 5mA
Power dissipation: 0.2W
Tolerance: ±2%
Zener voltage: 10V
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RS2BAH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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TSM8N80CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
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SMCJ36A SMCJ36A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ36AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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SMCJ36CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ36CAH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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RS3B TAIWAN SEMICONDUCTOR RS3A SERIES_M2304.pdf RS3A%20THRU%20RS3M%20N1813%20REV.A.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
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TPMR6GH TAIWAN SEMICONDUCTOR TPMR6GH SERIES_B2309.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; TO277A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 6A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
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TPMR6JH TAIWAN SEMICONDUCTOR TPMR6GH SERIES_B2309.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; TO277A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 6A
Max. off-state voltage: 0.6kV
Application: automotive industry
Type of diode: rectifying
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SMCJ54A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ54CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ54AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Mounting: SMD
Case: DO214AB; SMC
Semiconductor structure: unidirectional
Leakage current: 1µA
Type of diode: TVS
Kind of package: reel; tape
Max. forward impulse current: 18A
Tolerance: ±5%
Application: automotive industry
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Peak pulse power dissipation: 1.5kW
Manufacturer series: SMCJ
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TPMR10DH TAIWAN SEMICONDUCTOR TPMR10DH SERIES_B2309.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
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P2500M TAIWAN SEMICONDUCTOR P2500M_C2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 25A; P2500
Mounting: THT
Case: P2500
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 25A
Max. off-state voltage: 1kV
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HDBL107G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9B7AAFAF2F40D6&compId=HDBL101G_ser.pdf?ci_sign=f57b387e150978af2c4108495a6dabbe03acf91e Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Version: DIP
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
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BZW06-13B BZW06-13B TAIWAN SEMICONDUCTOR bzw065v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
9+47.73 грн
15+27.23 грн
79+11.87 грн
216+11.24 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BZW06-28 TAIWAN SEMICONDUCTOR en.CD00000694.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 31.4V; 13.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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1.5SMC36CA V6G 1.5SMC36CA V6G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2AFFC3231E100C4&compId=1.5SMC33A-R6.pdf?ci_sign=c05d8437256fbe9b2fb1ab5c3d94b3180a25daad Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 29.1V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
10+39.57 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
S8KC TAIWAN SEMICONDUCTOR S8GC SERIES_G2210.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
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S8KCH TAIWAN SEMICONDUCTOR S8GCH SERIES_B2210.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Application: automotive industry
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SMAJ150CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167V; 1.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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GPA806H TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.8kV
Application: automotive industry
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SFA806GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
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HERA806GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.6kV
Application: automotive industry
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P6SMB18CA P6SMB18CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
25+17.05 грн
35+11.40 грн
100+8.31 грн
156+6.02 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
TSP15U50S TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape
Kind of package: reel; tape
Case: TO277A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 15A
Max. off-state voltage: 50V
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TSM60N380CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK
Mounting: THT
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: IPAK
Drain current: 11A
Power dissipation: 125W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tube
Type of transistor: N-MOSFET
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TSM60N380CI C0G TSM60N380CI C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
Mounting: THT
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: TO220FP
Drain current: 11A
Power dissipation: 33W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tube
Type of transistor: N-MOSFET
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TSM60N380CP ROG TAIWAN SEMICONDUCTOR TSM60N380_A14.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: DPAK
Drain current: 11A
Power dissipation: 125W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tape
Type of transistor: N-MOSFET
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SMF15A TAIWAN SEMICONDUCTOR tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 16.7V; 8.2A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 8.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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BZT52C3V0 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V0 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 9µA
Zener current: 5mA
на замовлення 990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.09 грн
145+2.77 грн
250+2.49 грн
340+2.48 грн
Мінімальне замовлення: 105
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SMBJ9.0A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 40A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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BZX85C36 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C36 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 36V; 8mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 36V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 8mA
Leakage current: 0.5µA
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
60+7.59 грн
100+5.94 грн
200+4.75 грн
Мінімальне замовлення: 60
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BZT52C3V9 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V9 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
на замовлення 720 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
90+4.86 грн
125+3.28 грн
250+2.70 грн
Мінімальне замовлення: 90
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P4KE30A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 28.5V; 10A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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TS19377CS RLG pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C90FC09C714A18&compId=TS19377.pdf?ci_sign=57819565751f15998328241dbb72b563cdd821da
TS19377CS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; buck; LED driver; SOP8; 2A; Ch: 1; 3.6÷23VDC
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: SOP8
Output current: 2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 3.6...23V DC
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SF34G-A
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
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ABS15J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C8613CD40AF40D6&compId=ABS15J-ABS15M.pdf?ci_sign=6b1ac16902f343bc2f4096adca655b158cb1efa8
ABS15J
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS
Case: ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.29 грн
14+28.41 грн
72+12.98 грн
198+12.27 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TSM170N06CH X0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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P4KE39CA littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1V; 7.7A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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BZX55C6V2 R0G
BZX55C6V2 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1440 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.49 грн
42+9.50 грн
100+5.65 грн
250+4.54 грн
406+2.29 грн
1116+2.16 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BZX55C6V2 R0 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3
BZX55C6V2 R0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 280 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
118+3.64 грн
163+2.43 грн
Мінімальне замовлення: 118
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SMBJ6V0CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
SMBJ6V0CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 61A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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SMBJ6V0A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 61A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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MBS10 RCG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2DFC048155A60C4&compId=MBS2.pdf?ci_sign=24fcdfa399f09bcf58aa8aed2e408f06cf40a704
MBS10 RCG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.8A
Max. forward impulse current: 35A
Max. forward voltage: 1V
Case: MBS; TO269AA
Max. off-state voltage: 1kV
на замовлення 305 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+19.09 грн
30+14.25 грн
90+10.84 грн
240+10.21 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SFAF2006GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 20A; ITO220AC; automotive industry
Mounting: THT
Case: ITO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 20A
Max. off-state voltage: 0.4kV
Application: automotive industry
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SFAF2008GH pdf.php?pn=SFAF2008GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; ITO220AC; automotive industry
Mounting: THT
Case: ITO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 20A
Max. off-state voltage: 0.6kV
Application: automotive industry
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SFAF2004GH SFAF2001G SERIES_J2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; ITO220AC; automotive industry
Mounting: THT
Case: ITO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 20A
Max. off-state voltage: 200V
Application: automotive industry
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SMAJ15CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf 824501151.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ15CA00S0XM.pdf 5272_SMAJ15CA.pdf SMAJ15CA%20SMA%28DO-214AC%29.PDF SMAJx.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ%20Series%20Rev-1.pdf SMAJ SERIES_U2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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MUR860 mur820-d.pdf MUR820 SERIES_K2103.pdf mur860.pdf
MUR860
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+90.35 грн
10+70.68 грн
31+30.95 грн
Мінімальне замовлення: 5
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BZX55C8V2 R0G
BZX55C8V2 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
115+3.75 грн
140+2.87 грн
410+2.29 грн
1120+2.16 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
BZT52C6V8 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C6V8 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 1.8µA
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.09 грн
145+2.77 грн
250+2.49 грн
340+2.48 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C6V2 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C6V2 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
на замовлення 465 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.67 грн
74+5.38 грн
104+3.84 грн
314+2.96 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
GBPC3508 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9BF18ED45B00D6&compId=GBPC15_25_35_ser.pdf?ci_sign=4015d9a11799d5326d0aa6ccd83b22a7d7d97bb5
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
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GBPC3508W pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9BF18ED45B00D6&compId=GBPC15_25_35_ser.pdf?ci_sign=4015d9a11799d5326d0aa6ccd83b22a7d7d97bb5
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
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BZX85C30 R0G pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CC61FE6CB340C4&compId=BZX85C10-R0G.pdf?ci_sign=e43853bdcd2479505b5dc972981cb480cc6003af
BZX85C30 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 30V; 8mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 30V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 8mA
Kind of package: reel; tape
на замовлення 1450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.93 грн
46+8.63 грн
100+4.88 грн
395+2.36 грн
1084+2.23 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
TSM05N03CW RPG pdf.php?pn=TSM05N03CW
TSM05N03CW RPG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 131 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.26 грн
11+36.09 грн
25+27.31 грн
36+26.12 грн
98+24.69 грн
100+24.06 грн
Мінімальне замовлення: 8
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TSM051N04LCP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tape
Kind of channel: enhancement
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SMAJ26AH SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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BZT52B10S RRG BZT52B2V4S%20series_G1804.pdf
BZT52B10S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; 5mA; SMD; reel,tape; SOD323F; single diode
Case: SOD323F
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.18µA
Zener current: 5mA
Power dissipation: 0.2W
Tolerance: ±2%
Zener voltage: 10V
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RS2BAH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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TSM8N80CZ C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
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SMCJ36A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
SMCJ36A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ36AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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SMCJ36CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ36CAH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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RS3B RS3A SERIES_M2304.pdf RS3A%20THRU%20RS3M%20N1813%20REV.A.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
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TPMR6GH TPMR6GH SERIES_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; TO277A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 6A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
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TPMR6JH TPMR6GH SERIES_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; TO277A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 6A
Max. off-state voltage: 0.6kV
Application: automotive industry
Type of diode: rectifying
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SMCJ54A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ54CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ54AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Mounting: SMD
Case: DO214AB; SMC
Semiconductor structure: unidirectional
Leakage current: 1µA
Type of diode: TVS
Kind of package: reel; tape
Max. forward impulse current: 18A
Tolerance: ±5%
Application: automotive industry
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Peak pulse power dissipation: 1.5kW
Manufacturer series: SMCJ
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TPMR10DH TPMR10DH SERIES_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
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P2500M P2500M_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 25A; P2500
Mounting: THT
Case: P2500
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 25A
Max. off-state voltage: 1kV
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HDBL107G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9B7AAFAF2F40D6&compId=HDBL101G_ser.pdf?ci_sign=f57b387e150978af2c4108495a6dabbe03acf91e
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Version: DIP
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
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BZW06-13B bzw065v8.pdf
BZW06-13B
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.73 грн
15+27.23 грн
79+11.87 грн
216+11.24 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BZW06-28 en.CD00000694.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 31.4V; 13.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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1.5SMC36CA V6G pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2AFFC3231E100C4&compId=1.5SMC33A-R6.pdf?ci_sign=c05d8437256fbe9b2fb1ab5c3d94b3180a25daad
1.5SMC36CA V6G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 29.1V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+39.57 грн
Мінімальне замовлення: 10
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S8KC S8GC SERIES_G2210.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
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S8KCH S8GCH SERIES_B2210.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Application: automotive industry
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SMAJ150CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167V; 1.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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GPA806H
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.8kV
Application: automotive industry
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SFA806GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
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HERA806GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.6kV
Application: automotive industry
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P6SMB18CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5
P6SMB18CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.05 грн
35+11.40 грн
100+8.31 грн
156+6.02 грн
Мінімальне замовлення: 25
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TSP15U50S
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape
Kind of package: reel; tape
Case: TO277A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 15A
Max. off-state voltage: 50V
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TSM60N380CH C5G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK
Mounting: THT
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: IPAK
Drain current: 11A
Power dissipation: 125W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tube
Type of transistor: N-MOSFET
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TSM60N380CI C0G
TSM60N380CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
Mounting: THT
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: TO220FP
Drain current: 11A
Power dissipation: 33W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tube
Type of transistor: N-MOSFET
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TSM60N380CP ROG TSM60N380_A14.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: DPAK
Drain current: 11A
Power dissipation: 125W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tape
Type of transistor: N-MOSFET
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SMF15A tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 16.7V; 8.2A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 8.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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