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S2MAL TAIWAN SEMICONDUCTOR S2DAL SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
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HS1GAL TAIWAN SEMICONDUCTOR HS1DAL SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
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SK310B TAIWAN SEMICONDUCTOR SK310B%20N0283%20REV.A.pdf SK32B SERIES_P2212.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+5.13 грн
Мінімальне замовлення: 3000
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BZW04-8V5B TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5V; 27.6A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 27.6A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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P4KE10CA TAIWAN SEMICONDUCTOR media?resourcetype=datasheets&itemid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383&filename=littelfuse_tvs_diode_p4ke_datasheet.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5V; 29A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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P4SMA10A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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BZW04-8V5 TAIWAN SEMICONDUCTOR Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 27.6A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 27.6A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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P4KE10A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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P4SMA10CA TAIWAN SEMICONDUCTOR P4SMA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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MBR1560CT MBR1560CT TAIWAN SEMICONDUCTOR mbr1560ct-d.pdf MBR1560CT(-1)%20MBRB1560CT%20N0727%20REV.A.pdf MBR1545CT-1560CT.pdf MBR1535CT SERIES_I2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; TO220AB; Ufmax: 0.84V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 60V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
6+74.33 грн
10+50.78 грн
33+28.32 грн
91+26.82 грн
Мінімальне замовлення: 6
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BZW06-33 TAIWAN SEMICONDUCTOR en.CD00000694.pdf bzw065v8.pdf BZW06 SERIES_K2105.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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SMCJ14A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 67A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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1SMA4749H TAIWAN SEMICONDUCTOR 1SMA4737H SERIES_A2102.pdf Category: SMD Zener diodes
Description: Diode: Zener; 24V; SMD; reel,tape; DO214AC,SMA; single diode
Type of diode: Zener
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
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BZT52C3V6 RHG BZT52C3V6 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Zener current: 5mA
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
105+4.10 грн
120+3.17 грн
Мінімальне замовлення: 105
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S10MCH TAIWAN SEMICONDUCTOR S10GCH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; reel,tape
Mounting: SMD
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
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KBU1006G KBU1006G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
3+176.86 грн
10+109.49 грн
12+78.54 грн
33+74.58 грн
Мінімальне замовлення: 3
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KBU1004G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Max. off-state voltage: 0.4kV
Load current: 10A
Features of semiconductor devices: glass passivated
Case: KBU
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Kind of package: in-tray
Version: flat
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KBU1007G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Case: KBU
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 10A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: in-tray
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MBR3060PT TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869977E2F0ED0469&compId=MBR3060PT.pdf?ci_sign=8d4e8ac6c93930ce2d8ab4a3d2eaca53bbdcc5b7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
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MBR20L100CT TAIWAN SEMICONDUCTOR MBR20L100CT SERIES_H2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; TO220AB; Ufmax: 850mV
Max. forward voltage: 0.85V
Max. load current: 20A
Load current: 20A
Max. off-state voltage: 100V
Semiconductor structure: common cathode
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Leakage current: 20µA
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
50+59.81 грн
Мінімальне замовлення: 50
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SK84C SK84C TAIWAN SEMICONDUCTOR SK84C00000S040.pdf SK82C SERIES_L2102.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 150A
Kind of package: reel; tape
на замовлення 968 шт:
термін постачання 21-30 дні (днів)
10+42.72 грн
13+32.61 грн
62+15.07 грн
171+14.20 грн
Мінімальне замовлення: 10
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SMBJ28CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ28CAH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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1.5KE400CA 1.5KE400CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB8D65C80AF4760D6&compId=1.5KExx_SER.pdf?ci_sign=66bf3a25b6d3a7fc16260970bef20a40c1a65301 Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
на замовлення 122 шт:
термін постачання 21-30 дні (днів)
8+56.39 грн
10+43.00 грн
32+29.43 грн
87+27.85 грн
Мінімальне замовлення: 8
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UG1004GH TAIWAN SEMICONDUCTOR UG1004G SERIES_B2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 10A
Application: automotive industry
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SFA1004GH TAIWAN SEMICONDUCTOR SFA1001G%20SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
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SFS1004GH TAIWAN SEMICONDUCTOR SFS1001GH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; D2PAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. load current: 10A
Application: automotive industry
Kind of package: reel; tape
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UGF1004GAH TAIWAN SEMICONDUCTOR UGF1004GA SERIES_C2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
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UGF1004GH TAIWAN SEMICONDUCTOR UGF1004G SERIES_F2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
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HERF1004GH TAIWAN SEMICONDUCTOR HERF1001G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
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SFAF1004GH TAIWAN SEMICONDUCTOR SFAF1001G SERIES_H2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; ITO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Application: automotive industry
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UG1005GH TAIWAN SEMICONDUCTOR UG1004G SERIES_B2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; automotive industry
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
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SFS1005GH TAIWAN SEMICONDUCTOR SFS1001GH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 5Ax2; D2PAK; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: common cathode; double
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
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HER1005GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.4kV
Application: automotive industry
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GBPC3506W TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9BF18ED45B00D6&compId=GBPC15_25_35_ser.pdf?ci_sign=4015d9a11799d5326d0aa6ccd83b22a7d7d97bb5 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
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BZX55C33 R0G BZX55C33 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
115+3.76 грн
140+2.88 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
BZX55C3V6 R0G BZX55C3V6 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2µA
на замовлення 1648 шт:
термін постачання 21-30 дні (днів)
36+11.96 грн
49+8.25 грн
75+5.30 грн
102+3.92 грн
250+2.98 грн
500+2.66 грн
577+1.62 грн
1584+1.53 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZX55C36 R0G BZX55C36 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
115+3.76 грн
140+2.88 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
BZX55C39 R0G BZX55C39 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
на замовлення 940 шт:
термін постачання 21-30 дні (днів)
140+3.16 грн
165+2.43 грн
445+2.12 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
BZX55C30 R0G BZX55C30 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
40+10.25 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
TSM950N10CW RPG TAIWAN SEMICONDUCTOR TSM950N10_D1807.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
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SMCJ58A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SS23M SS23M TAIWAN SEMICONDUCTOR SS22M SERIES_M2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
32+13.67 грн
39+10.31 грн
100+7.78 грн
175+5.32 грн
478+5.08 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SS23MH TAIWAN SEMICONDUCTOR SS22MH SERIES_A2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
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TQM043NH04LCR RLG TAIWAN SEMICONDUCTOR TQM043NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 4.3mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 100W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM110NB04LCR RLG TAIWAN SEMICONDUCTOR TSM110NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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TQM025NH04LCR RLG TAIWAN SEMICONDUCTOR TQM025NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 63.3nC
On-state resistance: 2.5mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 136W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TQM019NH04LCR RLG TAIWAN SEMICONDUCTOR TQM019NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 104nC
On-state resistance: 1.9mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 150W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TQM032NH04LCR RLG TAIWAN SEMICONDUCTOR TQM032NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 3.2mΩ
Drain current: 81A
Gate-source voltage: ±16V
Power dissipation: 115W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TQM056NH04LCR RLG TAIWAN SEMICONDUCTOR TQM056NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 30.4nC
On-state resistance: 5.6mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 78.9W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TQM070NH04LCR RLG TAIWAN SEMICONDUCTOR TQM070NH04LCR_D2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 7mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 46.8W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM025NB04LCR RLG TAIWAN SEMICONDUCTOR TSM025NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 112nC
On-state resistance: 2.5mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR TSM033NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 3.3mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 36W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM070NB04LCR RLG TAIWAN SEMICONDUCTOR TSM070NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 7mΩ
Drain current: 15A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 40V
Case: PDFN56U
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TSM150NB04LCR RLG TAIWAN SEMICONDUCTOR TSM150NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Case: PDFN56
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 15mΩ
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 19W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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SMBJ58A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ58AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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SMCJ20CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
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TSD30H100CW MNG TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
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TSM10NC65CF C0G TSM10NC65CF C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.9Ω
Drain current: 6.3A
Gate-source voltage: ±30V
Power dissipation: 45W
Drain-source voltage: 650V
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S2MAL S2DAL SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
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HS1GAL HS1DAL SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Case: thinSMA
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
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SK310B SK310B%20N0283%20REV.A.pdf SK32B SERIES_P2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+5.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZW04-8V5B bzw045v8.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5V; 27.6A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 27.6A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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P4KE10CA media?resourcetype=datasheets&itemid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383&filename=littelfuse_tvs_diode_p4ke_datasheet.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5V; 29A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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P4SMA10A littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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BZW04-8V5
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 27.6A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 27.6A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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P4KE10A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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P4SMA10CA P4SMA.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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MBR1560CT mbr1560ct-d.pdf MBR1560CT(-1)%20MBRB1560CT%20N0727%20REV.A.pdf MBR1545CT-1560CT.pdf MBR1535CT SERIES_I2104.pdf
MBR1560CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; TO220AB; Ufmax: 0.84V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 60V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.33 грн
10+50.78 грн
33+28.32 грн
91+26.82 грн
Мінімальне замовлення: 6
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BZW06-33 en.CD00000694.pdf bzw065v8.pdf BZW06 SERIES_K2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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SMCJ14A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 67A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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1SMA4749H 1SMA4737H SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 24V; SMD; reel,tape; DO214AC,SMA; single diode
Type of diode: Zener
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
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BZT52C3V6 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V6 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Zener current: 5mA
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.10 грн
120+3.17 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
S10MCH S10GCH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; reel,tape
Mounting: SMD
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
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KBU1006G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
KBU1006G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+176.86 грн
10+109.49 грн
12+78.54 грн
33+74.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KBU1004G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Max. off-state voltage: 0.4kV
Load current: 10A
Features of semiconductor devices: glass passivated
Case: KBU
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Kind of package: in-tray
Version: flat
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KBU1007G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Case: KBU
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 10A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: in-tray
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MBR3060PT pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869977E2F0ED0469&compId=MBR3060PT.pdf?ci_sign=8d4e8ac6c93930ce2d8ab4a3d2eaca53bbdcc5b7
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
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MBR20L100CT MBR20L100CT SERIES_H2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; TO220AB; Ufmax: 850mV
Max. forward voltage: 0.85V
Max. load current: 20A
Load current: 20A
Max. off-state voltage: 100V
Semiconductor structure: common cathode
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Leakage current: 20µA
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+59.81 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SK84C SK84C00000S040.pdf SK82C SERIES_L2102.pdf
SK84C
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 150A
Kind of package: reel; tape
на замовлення 968 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.72 грн
13+32.61 грн
62+15.07 грн
171+14.20 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMBJ28CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ28CAH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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1.5KE400CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB8D65C80AF4760D6&compId=1.5KExx_SER.pdf?ci_sign=66bf3a25b6d3a7fc16260970bef20a40c1a65301
1.5KE400CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
на замовлення 122 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.39 грн
10+43.00 грн
32+29.43 грн
87+27.85 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
UG1004GH UG1004G SERIES_B2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 10A
Application: automotive industry
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SFA1004GH SFA1001G%20SERIES_K2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
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SFS1004GH SFS1001GH SERIES_A2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; D2PAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. load current: 10A
Application: automotive industry
Kind of package: reel; tape
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UGF1004GAH UGF1004GA SERIES_C2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
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UGF1004GH UGF1004G SERIES_F2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
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HERF1004GH HERF1001G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
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SFAF1004GH SFAF1001G SERIES_H2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; ITO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Application: automotive industry
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UG1005GH UG1004G SERIES_B2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; automotive industry
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
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SFS1005GH SFS1001GH SERIES_A2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 5Ax2; D2PAK; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: common cathode; double
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
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HER1005GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.4kV
Application: automotive industry
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GBPC3506W pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9BF18ED45B00D6&compId=GBPC15_25_35_ser.pdf?ci_sign=4015d9a11799d5326d0aa6ccd83b22a7d7d97bb5
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
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BZX55C33 R0G
BZX55C33 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
115+3.76 грн
140+2.88 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
BZX55C3V6 R0G
BZX55C3V6 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2µA
на замовлення 1648 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.96 грн
49+8.25 грн
75+5.30 грн
102+3.92 грн
250+2.98 грн
500+2.66 грн
577+1.62 грн
1584+1.53 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZX55C36 R0G
BZX55C36 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
115+3.76 грн
140+2.88 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
BZX55C39 R0G
BZX55C39 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
на замовлення 940 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
140+3.16 грн
165+2.43 грн
445+2.12 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
BZX55C30 R0G
BZX55C30 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
40+10.25 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
TSM950N10CW RPG TSM950N10_D1807.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
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SMCJ58A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SS23M SS22M SERIES_M2103.pdf
SS23M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.67 грн
39+10.31 грн
100+7.78 грн
175+5.32 грн
478+5.08 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SS23MH SS22MH SERIES_A2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
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TQM043NH04LCR RLG TQM043NH04LCR_C2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 4.3mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 100W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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TQM025NH04LCR RLG TQM025NH04LCR_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 63.3nC
On-state resistance: 2.5mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 136W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TQM019NH04LCR RLG TQM019NH04LCR_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 104nC
On-state resistance: 1.9mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 150W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TQM032NH04LCR RLG TQM032NH04LCR_C2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 3.2mΩ
Drain current: 81A
Gate-source voltage: ±16V
Power dissipation: 115W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TQM056NH04LCR RLG TQM056NH04LCR_C2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 30.4nC
On-state resistance: 5.6mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 78.9W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TQM070NH04LCR RLG TQM070NH04LCR_D2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 7mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 46.8W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 112nC
On-state resistance: 2.5mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 3.3mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 36W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM070NB04LCR RLG TSM070NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 7mΩ
Drain current: 15A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 40V
Case: PDFN56U
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TSM150NB04LCR RLG TSM150NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Case: PDFN56
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 15mΩ
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 19W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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SMBJ58A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ58AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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SMCJ20CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
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TSD30H100CW MNG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
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TSM10NC65CF C0G
TSM10NC65CF C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.9Ω
Drain current: 6.3A
Gate-source voltage: ±30V
Power dissipation: 45W
Drain-source voltage: 650V
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