Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (67488) > Сторінка 1119 з 1125
Фото | Назва | Виробник | Інформація |
Доступність |
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MBRAD5150H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 5A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 150V Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MBRAD2045H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 45V Load current: 20A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MBRAD20100H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMBJ22A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 17.7A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 17.7A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMBJ22CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 17.7A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 17.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TESDU5V0 RGG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 75W; 5.1V; bidirectional; 0603; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.1V Semiconductor structure: bidirectional Case: 0603 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Peak pulse power dissipation: 75W |
на замовлення 121 шт: термін постачання 21-30 дні (днів) |
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BC847CW RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 60000 шт: термін постачання 21-30 дні (днів) |
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TSM048NB06LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: PDFN56U Polarisation: unipolar Gate charge: 105nC On-state resistance: 4.8mΩ Drain current: 16A Gate-source voltage: ±20V Power dissipation: 45W Drain-source voltage: 60V Kind of package: tape |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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1SMA200Z | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.25W; 200V; 1.2mA; SMD; reel,tape; DO214AC,SMA Type of diode: Zener Power dissipation: 1.25W Zener voltage: 200V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: DO214AC; SMA Semiconductor structure: single diode Leakage current: 1µA Zener current: 1.2mA |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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SMAJ10CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMAJ100CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 100V Breakdown voltage: 111V Max. forward impulse current: 1.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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P4SMA33A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P4SMA Leakage current: 1µA |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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P4SMA36A M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA Max. forward impulse current: 8.4A |
на замовлення 194 шт: термін постачання 21-30 дні (днів) |
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S4D V6G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMC Semiconductor structure: single diode Load current: 4A Max. forward impulse current: 100A Max. forward voltage: 1.15V Max. off-state voltage: 200V Features of semiconductor devices: glass passivated Capacitance: 60pF Reverse recovery time: 1.5µs |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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S4J V6G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMC Semiconductor structure: single diode Load current: 4A Max. forward impulse current: 100A Max. forward voltage: 1.15V Max. off-state voltage: 0.6kV Features of semiconductor devices: glass passivated Capacitance: 60pF Reverse recovery time: 1.5µs |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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SF14G-K | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 200V; 1A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO41 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SF14G | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: rectifying; THT; 200V; 1A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO41 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TSM2NB60CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.35A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 9.4nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
1.5KE39CAH | TAIWAN SEMICONDUCTOR |
Category: Unclassified Description: 1.5KE39CAH |
на замовлення 3750 шт: термін постачання 21-30 дні (днів) |
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UG8JH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1PGSMB5938 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 36V; 42mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Zener current: 42mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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SMCJ70CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 70V Breakdown voltage: 77.8...86V Max. forward impulse current: 13.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMCJ30CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMCJ30CAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TS3480CX33 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.1V Output voltage: 3.3V Output current: 0.1A Case: SOT23 Mounting: SMD Manufacturer series: TS3480 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.8...30V |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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ES1BL | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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SMBJ11CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 34A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
P4KE33A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 9A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: P4KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBR2060CT | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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TS34118CS28 RDG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system Type of integrated circuit: driver Supply voltage: 3...6.5V DC Mounting: SMD Case: SOP28 Integrated circuit features: voice switched speakerphone system Kind of package: reel; tape |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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BZT52C16 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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BZT52C16S R9G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSS42U RGG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: 0603 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TSS43U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: 0603 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TS2940CZ33 C0G | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: THT Type of integrated circuit: voltage regulator Kind of package: tube Input voltage: 8.3...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 3.3V Case: TO220 |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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TS2937CZ33 C0G | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 3.3V Output current: 0.5A Case: TO220 Mounting: THT Manufacturer series: TS2937 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.3...26V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZV55C2V4 L0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 2.4V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 50µA Zener current: 5mA |
на замовлення 8630 шт: термін постачання 21-30 дні (днів) |
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BZX84C15 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.3W; 15V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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P6SMB150CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Tolerance: ±5% |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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TQM138KDCU6 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT363 Kind of package: tape Polarisation: unipolar Gate charge: 1.8nC Drain current: 0.32A Power dissipation: 0.32W On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TS2940CP33 ROG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2% Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Input voltage: 0...26V Tolerance: ±0.2% Voltage drop: 0.6V Output current: 1A Number of channels: 1 Output voltage: 3.3V Case: DPAK |
на замовлення 107 шт: термін постачання 21-30 дні (днів) |
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TS2940CW33 RPG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Input voltage: 8.3...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 3.3V Case: SOT223 |
на замовлення 203 шт: термін постачання 21-30 дні (днів) |
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TS2940CZ50 C0G | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: THT Type of integrated circuit: voltage regulator Kind of package: tube Input voltage: 10...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 5V Case: TO220 |
на замовлення 193 шт: термін постачання 21-30 дні (днів) |
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TS2940CM50 RNG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2% Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Input voltage: 10...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 5V Case: D2PAK |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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TSM70N380CI C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6.6A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 18.8nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TSM70N900CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 50W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TSM70N900CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 9.7nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TSM70N1R4CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2A Power dissipation: 38W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 7.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TSM70N1R4CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 7.7nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TSM70N380CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6.6A Power dissipation: 125W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 18.8nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TSM70N380CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6.6A Power dissipation: 125W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 18.8nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TSM70N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TSM70N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TSM70N600CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 12.6nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TSM70N750CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.6A Power dissipation: 62.5W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 10.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TSM70N750CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.6A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 10.7nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TSM70N900CI C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TSM70NB1R4CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 1.8A; 28W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 1.8A Power dissipation: 28W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 7.4nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MBRF30200CT | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 1.05V Max. forward impulse current: 200A Kind of package: tube |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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BZS55C3V0 RXG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Leakage current: 4µA Zener current: 5mA |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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MBRAD5150H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
MBRAD2045H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
MBRAD20100H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SMBJ22A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 17.7A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 17.7A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
SMBJ22CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 17.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 17.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 17.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 17.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
TESDU5V0 RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 75W; 5.1V; bidirectional; 0603; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.1V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 75W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 75W; 5.1V; bidirectional; 0603; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.1V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 75W
на замовлення 121 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.87 грн |
28+ | 14.25 грн |
100+ | 9.97 грн |
BC847CW RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 60000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.22 грн |
TSM048NB06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 105nC
On-state resistance: 4.8mΩ
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 60V
Kind of package: tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 105nC
On-state resistance: 4.8mΩ
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 60V
Kind of package: tape
на замовлення 36 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 173.88 грн |
5+ | 144.84 грн |
9+ | 115.55 грн |
23+ | 109.22 грн |
1SMA200Z |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 200V; 1.2mA; SMD; reel,tape; DO214AC,SMA
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 1.2mA
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 200V; 1.2mA; SMD; reel,tape; DO214AC,SMA
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 1.2mA
на замовлення 60 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 26.42 грн |
21+ | 19.31 грн |
SMAJ10CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
В кошику
од. на суму грн.
SMAJ100CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
В кошику
од. на суму грн.
P4SMA33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P4SMA
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P4SMA
Leakage current: 1µA
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 26.42 грн |
22+ | 18.28 грн |
29+ | 13.77 грн |
P4SMA36A M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 8.4A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 8.4A
на замовлення 194 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 17.73 грн |
36+ | 11.08 грн |
100+ | 9.74 грн |
109+ | 8.55 грн |
S4D V6G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Load current: 4A
Max. forward impulse current: 100A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Load current: 4A
Max. forward impulse current: 100A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Reverse recovery time: 1.5µs
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 26.12 грн |
S4J V6G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Load current: 4A
Max. forward impulse current: 100A
Max. forward voltage: 1.15V
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Load current: 4A
Max. forward impulse current: 100A
Max. forward voltage: 1.15V
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Reverse recovery time: 1.5µs
на замовлення 36 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 16.37 грн |
32+ | 12.58 грн |
SF14G-K |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
товару немає в наявності
В кошику
од. на суму грн.
SF14G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
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TSM2NB60CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of package: tape
Kind of channel: enhancement
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1.5KE39CAH |
на замовлення 3750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1250+ | 25.49 грн |
UG8JH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Application: automotive industry
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1PGSMB5938 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; 42mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Zener current: 42mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; 42mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Zener current: 42mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.26 грн |
11+ | 37.36 грн |
25+ | 28.18 грн |
42+ | 22.40 грн |
114+ | 21.21 грн |
SMCJ70CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 13.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 13.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ30CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ30CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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TS3480CX33 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Manufacturer series: TS3480
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...30V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Manufacturer series: TS3480
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...30V
на замовлення 98 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.40 грн |
13+ | 31.18 грн |
25+ | 25.41 грн |
43+ | 21.92 грн |
ES1BL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 8.78 грн |
SMBJ11CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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P4KE33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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MBR2060CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 59.66 грн |
10+ | 49.63 грн |
25+ | 38.15 грн |
50+ | 38.07 грн |
68+ | 36.01 грн |
TS34118CS28 RDG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system
Type of integrated circuit: driver
Supply voltage: 3...6.5V DC
Mounting: SMD
Case: SOP28
Integrated circuit features: voice switched speakerphone system
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system
Type of integrated circuit: driver
Supply voltage: 3...6.5V DC
Mounting: SMD
Case: SOP28
Integrated circuit features: voice switched speakerphone system
Kind of package: reel; tape
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 239.51 грн |
5+ | 200.24 грн |
6+ | 158.21 грн |
BZT52C16 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
105+ | 4.09 грн |
145+ | 2.77 грн |
250+ | 2.49 грн |
BZT52C16S R9G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
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TSS42U RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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TSS43U RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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TS2940CZ33 C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: TO220
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: TO220
на замовлення 124 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 153.42 грн |
5+ | 127.43 грн |
10+ | 98.14 грн |
27+ | 92.60 грн |
TS2937CZ33 C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
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BZV55C2V4 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 50µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 50µA
Zener current: 5mA
на замовлення 8630 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
57+ | 7.04 грн |
100+ | 4.54 грн |
250+ | 3.81 грн |
265+ | 3.51 грн |
500+ | 3.34 грн |
729+ | 3.32 грн |
1000+ | 3.18 грн |
BZX84C15 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 66 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
66+ | 6.82 грн |
P6SMB150CA | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.24 грн |
16+ | 24.77 грн |
25+ | 20.74 грн |
78+ | 11.95 грн |
214+ | 11.32 грн |
TQM138KDCU6 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Kind of package: tape
Polarisation: unipolar
Gate charge: 1.8nC
Drain current: 0.32A
Power dissipation: 0.32W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Kind of package: tape
Polarisation: unipolar
Gate charge: 1.8nC
Drain current: 0.32A
Power dissipation: 0.32W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
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TS2940CP33 ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 0...26V
Tolerance: ±0.2%
Voltage drop: 0.6V
Output current: 1A
Number of channels: 1
Output voltage: 3.3V
Case: DPAK
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 0...26V
Tolerance: ±0.2%
Voltage drop: 0.6V
Output current: 1A
Number of channels: 1
Output voltage: 3.3V
Case: DPAK
на замовлення 107 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 161.09 грн |
10+ | 94.18 грн |
18+ | 53.03 грн |
48+ | 50.65 грн |
TS2940CW33 RPG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: SOT223
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: SOT223
на замовлення 203 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 119.33 грн |
10+ | 68.86 грн |
25+ | 58.01 грн |
27+ | 34.51 грн |
50+ | 34.43 грн |
75+ | 32.61 грн |
TS2940CZ50 C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 10...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 5V
Case: TO220
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 10...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 5V
Case: TO220
на замовлення 193 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 163.65 грн |
5+ | 120.30 грн |
9+ | 104.47 грн |
10+ | 102.10 грн |
25+ | 96.56 грн |
TS2940CM50 RNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 10...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 5V
Case: D2PAK
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 10...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 5V
Case: D2PAK
на замовлення 45 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 202.01 грн |
9+ | 110.01 грн |
24+ | 103.68 грн |
25+ | 102.89 грн |
TSM70N380CI C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N900CH C5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N900CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N1R4CH C5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N1R4CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N380CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N380CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N600CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N750CH C5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N750CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 10.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 10.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N900CI C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70NB1R4CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 1.8A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 1.8A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 1.8A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 1.8A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: tape
Kind of channel: enhancement
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MBRF30200CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
на замовлення 79 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 137.23 грн |
10+ | 114.76 грн |
11+ | 88.64 грн |
29+ | 83.10 грн |
BZS55C3V0 RXG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
на замовлення 970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
75+ | 5.71 грн |
130+ | 3.11 грн |
420+ | 2.23 грн |