Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (67489) > Сторінка 1123 з 1125
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SMBJ58A | TAIWAN SEMICONDUCTOR |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
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| SMBJ58AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Application: automotive industry |
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| SMCJ20CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 48A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: SMCJ |
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| TSD30H100CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 0.78V Max. forward impulse current: 200A |
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TSM10NC65CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Case: TO220FP Polarisation: unipolar Gate charge: 34nC On-state resistance: 0.9Ω Drain current: 6.3A Gate-source voltage: ±30V Power dissipation: 45W Drain-source voltage: 650V |
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TSM126CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24mA Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 800Ω Mounting: SMD Gate charge: 1.18nC Kind of package: tape Kind of channel: enhancement |
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| TSM190N08CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 14A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement |
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TSM100N06CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 107W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
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TSM60NB380CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 21nC On-state resistance: 0.38Ω Power dissipation: 62.5W Drain current: 7A Gate-source voltage: ±30V Drain-source voltage: 600V Case: TO220FP Kind of package: tube Kind of channel: enhancement |
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| TSM60NB380CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 19.4nC On-state resistance: 0.38Ω Power dissipation: 83W Drain current: 6A Gate-source voltage: ±30V Drain-source voltage: 600V Case: IPAK Kind of package: tube Kind of channel: enhancement |
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| SMBJ36CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.8A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% Application: automotive industry |
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| HERA805GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO220AC Application: automotive industry |
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| SMBJ33CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 11.8A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% Application: automotive industry |
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| RMB4S | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 0.8A Max. forward impulse current: 30A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
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BZX55C2V7 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Zener current: 5mA |
на замовлення 584 шт: термін постачання 21-30 дні (днів) |
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BZX55C2V7 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Zener current: 5mA |
на замовлення 530 шт: термін постачання 21-30 дні (днів) |
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| 1N4749A | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Zener current: 10.5mA Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
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| SMBJ6V5A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 7.22V; 53.6A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22V Max. forward impulse current: 53.6A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.5mA Application: general purpose Operating temperature: -55...150°C Number of channels: 1 Manufacturer series: SMBJ |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| TSM2N7002AKCU RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Power dissipation: 298mW Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: tape Kind of channel: enhancement |
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| TSM2N7002AKDCU6 RFG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.24W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: tape Kind of channel: enhancement |
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| SF2004PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO3P Max. load current: 20A Application: automotive industry Features of semiconductor devices: superfast switching |
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| SF2005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. load current: 20A Application: automotive industry Features of semiconductor devices: superfast switching |
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| BYG23M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Kind of package: reel; tape |
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| BYG23MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Kind of package: reel; tape Application: automotive industry |
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| TSCDT06065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220AC Kind of package: tube |
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| TSCDT08065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube |
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| TSCDT10065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 10A |
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| TSCDT12065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220AC Kind of package: tube |
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| TSCDT16065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: TO220AC Kind of package: tube |
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| TSCDT20065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Kind of package: tube |
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| TSCDF12065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; ITO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube |
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| TSCDF10065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube |
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| TSCDF16065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; ITO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube |
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| SMCJ30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
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| SMCJ30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
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| TLD5S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB Mounting: SMD Semiconductor structure: unidirectional Case: DO218AB Manufacturer series: TLD5S Type of diode: TVS Leakage current: 15µA Tolerance: ±5% Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 212A Peak pulse power dissipation: 3.6kW Application: automotive industry Kind of package: reel; tape |
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| TLD6S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB Mounting: SMD Semiconductor structure: unidirectional Case: DO218AB Manufacturer series: TLD6S Type of diode: TVS Leakage current: 15µA Tolerance: ±5% Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 271A Peak pulse power dissipation: 4.6kW Application: automotive industry Kind of package: reel; tape |
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| TLD8S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB Mounting: SMD Semiconductor structure: unidirectional Case: DO218AB Manufacturer series: TLD8S Type of diode: TVS Leakage current: 15µA Tolerance: ±5% Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 388A Peak pulse power dissipation: 6.6kW Application: automotive industry Kind of package: reel; tape |
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| P4KE6.8A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; DO41; P4KE Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.46V Max. forward impulse current: 40A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
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| P4KE6.8CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 6.46V; 40A; bidirectional; DO41; 0.4kW; P4KE Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.46V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
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| MBRS1045CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2 Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 5A x2 Semiconductor structure: common cathode; double |
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TESD5V0V4UCX6 RFG | TAIWAN SEMICONDUCTOR |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 5A; 75W; SOT26; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 5A Peak pulse power dissipation: 75W Mounting: SMD Case: SOT26 Max. off-state voltage: 5V Number of channels: 4 Kind of package: reel; tape Application: Ethernet; USB Version: ESD |
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| TESD5V0L1UC RJG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Breakdown voltage: 6...9.8V Max. forward impulse current: 3A Peak pulse power dissipation: 0.1kW Mounting: SMD Case: DFN1006-2 Max. off-state voltage: 5V Kind of package: reel; tape Leakage current: 0.1µA Semiconductor structure: bidirectional |
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| P4KE440A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE Type of diode: TVS Max. off-state voltage: 376V Breakdown voltage: 418V Max. forward impulse current: 0.69A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
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| BZD27C11PWH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 11V; 50mA; SMD; reel,tape; SOD123W; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123W Semiconductor structure: single diode Zener current: 50mA |
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| BZD27C12PW | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 12V; 50mA; SMD; reel,tape; SOD123W; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123W Semiconductor structure: single diode Zener current: 50mA |
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| BZD27C15PW | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123W Semiconductor structure: single diode Zener current: 50mA |
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В кошику од. на суму грн. | |||||||||||
| BZD27C16PWH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 16V; 50mA; SMD; reel,tape; SOD123W; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123W Semiconductor structure: single diode Zener current: 50mA |
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В кошику од. на суму грн. | |||||||||||
| BZD27C18PW | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123W Semiconductor structure: single diode Zener current: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BZD27C18PWH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123W Semiconductor structure: single diode Zener current: 50mA |
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В кошику од. на суму грн. | |||||||||||
 |
BZW04-31B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 34.2V; 8A; bidirectional; DO41; 0.4kW; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2V Semiconductor structure: bidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 Max. forward impulse current: 8A |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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| BZW04-128 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; DO41; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 128V Breakdown voltage: 143V Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 Max. forward impulse current: 2A |
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В кошику од. на суму грн. | |||||||||||
| 1.5SMC15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Max. forward impulse current: 74A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
S1G M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 40A Max. off-state voltage: 0.4kV Features of semiconductor devices: glass passivated Capacitance: 12pF Reverse recovery time: 1.5µs |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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S1D M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 40A Max. off-state voltage: 200V Features of semiconductor devices: glass passivated Capacitance: 12pF Reverse recovery time: 1.5µs |
на замовлення 946 шт: термін постачання 21-30 дні (днів) |
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| TSM070NB04CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: tape Polarisation: unipolar Gate charge: 40nC On-state resistance: 7mΩ Drain current: 15A Gate-source voltage: ±20V Power dissipation: 28W Drain-source voltage: 40V Case: PDFN56U |
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В кошику од. на суму грн. | |||||||||||
| 1N5408G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; DO201AD Mounting: THT Load current: 3A Max. off-state voltage: 1kV Case: DO201AD Type of diode: rectifying Semiconductor structure: single diode |
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В кошику од. на суму грн. | |||||||||||
| GBPC2501 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 25A; Ifsm: 300A Kind of package: in-tray Electrical mounting: THT Version: square Max. forward voltage: 1.1V Max. off-state voltage: 100V Max. forward impulse current: 0.3kA Load current: 25A Leads: connectors FASTON Case: GBPC Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
BZX55C47 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 47V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 2.5mA Kind of package: tape |
на замовлення 419 шт: термін постачання 21-30 дні (днів) |
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| 5.0SMDJ30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 103A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. |
| SMBJ58A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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| SMBJ58AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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| SMCJ20CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
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| TSD30H100CW MNG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
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| TSM10NC65CF C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.9Ω
Drain current: 6.3A
Gate-source voltage: ±30V
Power dissipation: 45W
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.9Ω
Drain current: 6.3A
Gate-source voltage: ±30V
Power dissipation: 45W
Drain-source voltage: 650V
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| TSM126CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of package: tape
Kind of channel: enhancement
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| TSM190N08CZ C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
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| TSM100N06CZ C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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| TSM60NB380CF C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 0.38Ω
Power dissipation: 62.5W
Drain current: 7A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 0.38Ω
Power dissipation: 62.5W
Drain current: 7A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
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| TSM60NB380CH C5G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 19.4nC
On-state resistance: 0.38Ω
Power dissipation: 83W
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 19.4nC
On-state resistance: 0.38Ω
Power dissipation: 83W
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
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| SMBJ36CAH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
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| HERA805GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
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| SMBJ33CAH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
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| RMB4S |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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| BZX55C2V7 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 584 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.96 грн |
| 50+ | 8.01 грн |
| 100+ | 4.78 грн |
| 250+ | 3.83 грн |
| 441+ | 2.12 грн |
| BZX55C2V7 R0 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 530 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 99+ | 4.33 грн |
| 137+ | 2.91 грн |
| 423+ | 2.21 грн |
| 1N4749A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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| SMBJ6V5A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Application: general purpose
Operating temperature: -55...150°C
Number of channels: 1
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Application: general purpose
Operating temperature: -55...150°C
Number of channels: 1
Manufacturer series: SMBJ
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.83 грн |
| TSM2N7002AKCU RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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| TSM2N7002AKDCU6 RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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| SF2004PTH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. load current: 20A
Application: automotive industry
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. load current: 20A
Application: automotive industry
Features of semiconductor devices: superfast switching
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| SF2005GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 20A
Application: automotive industry
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 20A
Application: automotive industry
Features of semiconductor devices: superfast switching
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| BYG23M |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
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| BYG23MH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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| TSCDT06065G1 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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| TSCDT08065G1 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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| TSCDT10065G1 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
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| TSCDT12065G1 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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| TSCDT16065G1 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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| TSCDT20065G1 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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| TSCDF12065G1 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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| TSCDF10065G1 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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| TSCDF16065G1 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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| SMCJ30A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SMCJ30AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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| TLD5S10AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD5S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Peak pulse power dissipation: 3.6kW
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD5S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Peak pulse power dissipation: 3.6kW
Application: automotive industry
Kind of package: reel; tape
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| TLD6S10AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD6S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Peak pulse power dissipation: 4.6kW
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD6S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Peak pulse power dissipation: 4.6kW
Application: automotive industry
Kind of package: reel; tape
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| TLD8S10AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD8S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD8S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Kind of package: reel; tape
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| P4KE6.8A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| P4KE6.8CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.46V; 40A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.46V; 40A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| MBRS1045CT |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
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| TESD5V0V4UCX6 RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 75W; SOT26; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 75W
Mounting: SMD
Case: SOT26
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 75W; SOT26; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 75W
Mounting: SMD
Case: SOT26
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
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| TESD5V0L1UC RJG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.1kW
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 0.1µA
Semiconductor structure: bidirectional
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.1kW
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 0.1µA
Semiconductor structure: bidirectional
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| P4KE440A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.69A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.69A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| BZD27C11PWH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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| BZD27C12PW |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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| BZD27C15PW |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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| BZD27C16PWH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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| BZD27C18PW |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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| BZD27C18PWH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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| BZW04-31B |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 34.2V; 8A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 8A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 34.2V; 8A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 8A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 42.72 грн |
| 18+ | 23.09 грн |
| 100+ | 9.36 грн |
| 275+ | 8.81 грн |
| BZW04-128 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 2A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 2A
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| 1.5SMC15A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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| S1G M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.40 грн |
| 50+ | 7.93 грн |
| S1D M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
на замовлення 946 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.80 грн |
| 39+ | 10.23 грн |
| 136+ | 2.92 грн |
| 387+ | 2.41 грн |
| 500+ | 2.19 грн |
| TSM070NB04CR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 7mΩ
Drain current: 15A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 40V
Case: PDFN56U
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 7mΩ
Drain current: 15A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 40V
Case: PDFN56U
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| 1N5408G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Mounting: THT
Load current: 3A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Mounting: THT
Load current: 3A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
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| GBPC2501 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 25A; Ifsm: 300A
Kind of package: in-tray
Electrical mounting: THT
Version: square
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Load current: 25A
Leads: connectors FASTON
Case: GBPC
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 25A; Ifsm: 300A
Kind of package: in-tray
Electrical mounting: THT
Version: square
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Load current: 25A
Leads: connectors FASTON
Case: GBPC
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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| BZX55C47 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
Kind of package: tape
на замовлення 419 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 115+ | 3.76 грн |
| 140+ | 2.88 грн |
| 410+ | 2.29 грн |
| 5.0SMDJ30A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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