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BZT52C11 RHG BZT52C11 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
на замовлення 860 шт:
термін постачання 21-30 дні (днів)
105+4.09 грн
145+2.77 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C12 RHG BZT52C12 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
на замовлення 755 шт:
термін постачання 21-30 дні (днів)
50+8.52 грн
82+4.83 грн
120+3.31 грн
250+2.85 грн
340+2.74 грн
500+2.55 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BZT52C22 RHG BZT52C22 RHG TAIWAN SEMICONDUCTOR BZT52C2V4%20SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 599 шт:
термін постачання 21-30 дні (днів)
105+4.09 грн
145+2.77 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C75 RHG BZT52C75 RHG TAIWAN SEMICONDUCTOR pdf.php?pn=BZT52C75 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
15+28.13 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
MMSZ5232B RHG MMSZ5232B RHG TAIWAN SEMICONDUCTOR MMSZ5221B series_H2007.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 20mA; SMD; reel,tape; SOD123F; Ir: 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 5335 шт:
термін постачання 21-30 дні (днів)
90+4.94 грн
100+4.18 грн
240+3.90 грн
250+3.69 грн
1000+3.55 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
BZT52C8V2 RHG BZT52C8V2 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 630nA
на замовлення 620 шт:
термін постачання 21-30 дні (днів)
105+4.09 грн
145+2.77 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52B20-G RHG BZT52B20-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G SERIES_H2002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 20V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 4725 шт:
термін постачання 21-30 дні (днів)
45+9.72 грн
85+4.94 грн
105+3.93 грн
500+3.77 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
BZT52B4V3 RHG BZT52B4V3 RHG TAIWAN SEMICONDUCTOR BZT52B2V4%20series_F15.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 5805 шт:
термін постачання 21-30 дні (днів)
90+4.86 грн
105+3.95 грн
250+3.49 грн
1000+3.36 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
BZT52B3V6 RHG BZT52B3V6 RHG TAIWAN SEMICONDUCTOR BZT52B2V4 series_F15.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
на замовлення 5690 шт:
термін постачання 21-30 дні (днів)
80+5.37 грн
100+4.37 грн
230+4.10 грн
250+3.86 грн
1000+3.72 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
BZT52B4V7 RHG BZT52B4V7 RHG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 4465 шт:
термін постачання 21-30 дні (днів)
90+4.86 грн
105+3.95 грн
250+3.49 грн
1000+3.36 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
BZT52B13-G RHG BZT52B13-G RHG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)
45+9.72 грн
85+4.94 грн
105+3.93 грн
500+3.77 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
SMDJ36CAH TAIWAN SEMICONDUCTOR pdf.php?pn=SMDJ36CAH Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
Application: automotive industry
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SMCJ22CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 44A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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BZW04-376B TAIWAN SEMICONDUCTOR en.CD00000693.pdf bzw045v8.pdf BZW04 SERIES_J2104.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.67A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: BZW04
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TSM4936DCS RLG TSM4936DCS RLG TAIWAN SEMICONDUCTOR TSM4936D_B15.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8
Kind of package: tape
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 36mΩ
Power dissipation: 2.1W
Drain current: 5.9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
10+46.88 грн
12+35.77 грн
25+31.66 грн
33+28.57 грн
90+26.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TS2938CS33 RLG TS2938CS33 RLG TAIWAN SEMICONDUCTOR pdf.php?pn=TS2938CS33 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: SOP8
Mounting: SMD
Manufacturer series: TS2938
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
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TSG65N110CE RVG TAIWAN SEMICONDUCTOR TSG65N110CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N195CE RVG TAIWAN SEMICONDUCTOR TSG65N195CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSM060NB06CZ C0G TAIWAN SEMICONDUCTOR TSM060NB06CZ_A2008.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
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TSM060NB06LCZ C0G TAIWAN SEMICONDUCTOR TSM060NB06LCZ_A2009.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NE048PW C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61A; 431W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
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US1KH TAIWAN SEMICONDUCTOR US1AH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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SMCJ64A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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5.0SMDJ30AH TAIWAN SEMICONDUCTOR 5.0SMDJH SERIES_A2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Application: automotive industry
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MBR2545CT MBR2545CT TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EBFCF978012469&compId=MBR2545CT.pdf?ci_sign=bca26b839352dba5f9fc0f28fcd07d2e5ab93c35 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
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MBR2545CT TAIWAN SEMICONDUCTOR MBR25_%20CTPbF%20Series.pdf MBR2545CT-2560CT.pdf MBR2535CT%20Rev11.pdf MBR2535CT SERIES_K2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
4+132.97 грн
5+106.06 грн
10+98.93 грн
18+52.24 грн
50+49.07 грн
Мінімальне замовлення: 4
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MBR2545CTH TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Application: automotive industry
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1N4007G TAIWAN SEMICONDUCTOR 1n4001-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
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MUR120S TAIWAN SEMICONDUCTOR MUR105S SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
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MUR120SH TAIWAN SEMICONDUCTOR MUR105SH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Application: automotive industry
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ES3J TAIWAN SEMICONDUCTOR ES3J-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
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TSF30U45C TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
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SMBJ43CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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BZW04-64 TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 71.3V; 3.9A; unidirectional; DO41; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: THT
Type of diode: TVS
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BZW04-64B TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 71.3V; 3.9A; bidirectional; DO41; 0.4kW; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Mounting: THT
Type of diode: TVS
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SMCJ24CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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MUR860 MUR860 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BA8DDA7E67929E28&compId=MUR8x0.pdf?ci_sign=dc73083ec92311d81c0bf785fab28210c13a41e6 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
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TSS70U RGG TAIWAN SEMICONDUCTOR TSS70U_C1601.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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HER1006GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.6kV
Application: automotive industry
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HER1008GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
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SS26 TAIWAN SEMICONDUCTOR 5399_SS26%20SMA.PDF pdf.php?pn=SS26 3372_SS26A00000S060.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Load current: 2A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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P6SMB24CA M4G P6SMB24CA M4G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
30+13.30 грн
80+12.11 грн
100+11.95 грн
215+11.40 грн
250+11.16 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
TSS0230LU RGG TAIWAN SEMICONDUCTOR TSS0230LU_C1601.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603B
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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SS13 SS13 TAIWAN SEMICONDUCTOR ss19-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 6464 шт:
термін постачання 21-30 дні (днів)
42+10.23 грн
46+8.63 грн
100+7.28 грн
186+4.99 грн
510+4.75 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SS13M SS13M TAIWAN SEMICONDUCTOR SS13M%20SERIES_O2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
14+30.68 грн
29+14.09 грн
100+8.94 грн
175+5.30 грн
482+4.99 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SR1060 C0 SR1060 C0 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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BZT52C11 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C11 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
на замовлення 860 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.09 грн
145+2.77 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C12 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C12 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
на замовлення 755 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.52 грн
82+4.83 грн
120+3.31 грн
250+2.85 грн
340+2.74 грн
500+2.55 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BZT52C22 RHG BZT52C2V4%20SERIES_G1804.pdf
BZT52C22 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 599 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.09 грн
145+2.77 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C75 RHG pdf.php?pn=BZT52C75
BZT52C75 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.13 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
MMSZ5232B RHG MMSZ5221B series_H2007.pdf
MMSZ5232B RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 20mA; SMD; reel,tape; SOD123F; Ir: 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 5335 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
90+4.94 грн
100+4.18 грн
240+3.90 грн
250+3.69 грн
1000+3.55 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
BZT52C8V2 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C8V2 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 630nA
на замовлення 620 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.09 грн
145+2.77 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52B20-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B20-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 20V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 4725 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
45+9.72 грн
85+4.94 грн
105+3.93 грн
500+3.77 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
BZT52B4V3 RHG BZT52B2V4%20series_F15.pdf
BZT52B4V3 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 5805 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
90+4.86 грн
105+3.95 грн
250+3.49 грн
1000+3.36 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
BZT52B3V6 RHG BZT52B2V4 series_F15.pdf
BZT52B3V6 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
на замовлення 5690 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
80+5.37 грн
100+4.37 грн
230+4.10 грн
250+3.86 грн
1000+3.72 грн
Мінімальне замовлення: 80
В кошику  од. на суму  грн.
BZT52B4V7 RHG
BZT52B4V7 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 4465 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
90+4.86 грн
105+3.95 грн
250+3.49 грн
1000+3.36 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
BZT52B13-G RHG
BZT52B13-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
45+9.72 грн
85+4.94 грн
105+3.93 грн
500+3.77 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
SMDJ36CAH pdf.php?pn=SMDJ36CAH
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
Application: automotive industry
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SMCJ22CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 44A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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BZW04-376B en.CD00000693.pdf bzw045v8.pdf BZW04 SERIES_J2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.67A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: BZW04
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TSM4936DCS RLG TSM4936D_B15.pdf
TSM4936DCS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8
Kind of package: tape
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 36mΩ
Power dissipation: 2.1W
Drain current: 5.9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+46.88 грн
12+35.77 грн
25+31.66 грн
33+28.57 грн
90+26.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TS2938CS33 RLG pdf.php?pn=TS2938CS33
TS2938CS33 RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: SOP8
Mounting: SMD
Manufacturer series: TS2938
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
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TSG65N110CE RVG TSG65N110CE_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N195CE RVG TSG65N195CE_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSM060NB06CZ C0G TSM060NB06CZ_A2008.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
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TSM060NB06LCZ C0G TSM060NB06LCZ_A2009.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NE048PW C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61A; 431W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
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US1KH US1AH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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SMCJ64A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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5.0SMDJ30AH 5.0SMDJH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Application: automotive industry
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MBR2545CT pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EBFCF978012469&compId=MBR2545CT.pdf?ci_sign=bca26b839352dba5f9fc0f28fcd07d2e5ab93c35
MBR2545CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
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MBR2545CT MBR25_%20CTPbF%20Series.pdf MBR2545CT-2560CT.pdf MBR2535CT%20Rev11.pdf MBR2535CT SERIES_K2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+132.97 грн
5+106.06 грн
10+98.93 грн
18+52.24 грн
50+49.07 грн
Мінімальне замовлення: 4
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MBR2545CTH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Application: automotive industry
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1N4007G 1n4001-d.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
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MUR120S MUR105S SERIES_L2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
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MUR120SH MUR105SH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Application: automotive industry
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ES3J ES3J-D.PDF
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
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TSF30U45C
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
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SMBJ43CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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BZW04-64 bzw045v8.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 71.3V; 3.9A; unidirectional; DO41; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: THT
Type of diode: TVS
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BZW04-64B bzw045v8.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 71.3V; 3.9A; bidirectional; DO41; 0.4kW; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Mounting: THT
Type of diode: TVS
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SMCJ24CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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MUR860 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BA8DDA7E67929E28&compId=MUR8x0.pdf?ci_sign=dc73083ec92311d81c0bf785fab28210c13a41e6
MUR860
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
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TSS70U RGG TSS70U_C1601.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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HER1006GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.6kV
Application: automotive industry
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HER1008GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
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SS26 5399_SS26%20SMA.PDF pdf.php?pn=SS26 3372_SS26A00000S060.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Load current: 2A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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P6SMB24CA M4G pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5
P6SMB24CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+13.30 грн
80+12.11 грн
100+11.95 грн
215+11.40 грн
250+11.16 грн
Мінімальне замовлення: 30
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TSS0230LU RGG TSS0230LU_C1601.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603B
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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SS13 ss19-d.pdf
SS13
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 6464 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.23 грн
46+8.63 грн
100+7.28 грн
186+4.99 грн
510+4.75 грн
Мінімальне замовлення: 42
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SS13M SS13M%20SERIES_O2103.pdf
SS13M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.68 грн
29+14.09 грн
100+8.94 грн
175+5.30 грн
482+4.99 грн
Мінімальне замовлення: 14
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SR1060 C0
SR1060 C0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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