Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (50270) > Сторінка 829 з 838
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| P4SMA27AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 25.7V; 11A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 23.1V Breakdown voltage: 25.7V Max. forward impulse current: 11A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
BZX55C2V7 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.7V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Case: DO35 Mounting: THT Tolerance: ±5% Kind of package: tape Semiconductor structure: single diode |
на замовлення 200 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
BZX55C2V7 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Case: DO35 Mounting: THT Tolerance: ±5% Kind of package: tape Semiconductor structure: single diode |
на замовлення 564 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
| MBR20H100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 950mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.95V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
BZX85C36 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 36V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 36V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 167 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
BZT52C36 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 36V; SMD; SOD123F; reel,tape; single diode Tolerance: ±5% Mounting: SMD Power dissipation: 0.5W Zener voltage: 36V Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener |
на замовлення 922 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
| SMAJ64A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 64V Breakdown voltage: 71.1V Max. forward impulse current: 3.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Tolerance: ±5% |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||
|
TSM2323CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.7A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 39mΩ Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate charge: 19nC |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
BZX85C13 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 13V; DO41; single diode; tape Type of diode: Zener Power dissipation: 1.3W Zener voltage: 13V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 723 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
TSM090N03CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
MBR745 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Case: TO220AC Semiconductor structure: single diode Max. forward impulse current: 150A Max. forward voltage: 0.75V Max. load current: 15A Kind of package: tube |
на замовлення 84 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
| SMAJ100CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 1.9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
BZT52B10S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 10V; SMD; SOD323F; reel,tape; single diode Case: SOD323F Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.2W Tolerance: ±2% Zener voltage: 10V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||
| DBL156G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1.5A Max. forward impulse current: 50A Case: DBL Kind of package: tube Max. forward voltage: 1.1V Electrical mounting: THT Version: DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
BZS55C12 RAG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; 1206; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: reel; tape Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Case - mm: 3216 Case - inch: 1206 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DBL157G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 50A Case: DBL Kind of package: tube Max. forward voltage: 1.1V Electrical mounting: THT Version: DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1KSMB30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 28.5V; 24.2A; unidirectional; SMB; 1KSMB Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5V Max. forward impulse current: 24.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: 1KSMB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1KSMB30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1kW; 28.5V; 24.2A; unidirectional; SMB; 1KSMB Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5V Max. forward impulse current: 24.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Application: automotive industry Manufacturer series: 1KSMB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMF36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.2kW; 40V; 3.4A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 3.4A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMA10CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: bidirectional Manufacturer series: P4SMA Max. forward impulse current: 29A Max. off-state voltage: 8.55V Breakdown voltage: 9.5V Peak pulse power dissipation: 0.4kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMA100CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 95V; 3A; bidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: bidirectional Manufacturer series: P4SMA Max. forward impulse current: 3A Max. off-state voltage: 85.5V Breakdown voltage: 95V Peak pulse power dissipation: 0.4kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
P4SMA10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.55V Breakdown voltage: 9.5V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SMDJ36AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 40V; 51.6A; unidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 51.6A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Manufacturer series: SMDJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
5.0SMDJ36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 86.1A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Manufacturer series: 5.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
TESDU24V RGG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 47W; 25V; bidirectional; 0201; reel,tape Type of diode: TVS Peak pulse power dissipation: 47W Max. off-state voltage: 24V Breakdown voltage: 25V Semiconductor structure: bidirectional Case - inch: 0201 Case - mm: 0603 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSZU52C4V3 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 4.3V; SMD; 0603; single diode; reel,tape Type of diode: Zener Power dissipation: 0.15W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Case - inch: 0603 Case - mm: 1608 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSZU52C4V7 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 4.7V; SMD; 0603; single diode; reel,tape Type of diode: Zener Power dissipation: 0.15W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case - inch: 0603 Case - mm: 1608 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DBL205G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 2A Max. forward impulse current: 50A Case: DBL Kind of package: tube Max. forward voltage: 1.15V Electrical mounting: THT Version: DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
TSM048NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U On-state resistance: 4.8mΩ Mounting: SMD Power dissipation: 45W Gate charge: 105nC Polarisation: unipolar Drain current: 16A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tape Case: PDFN56U |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
| SMAJ170A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 189V; 1.1A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 170V Breakdown voltage: 189V Max. forward impulse current: 1.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ170CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 189V; 1.1A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 170V Breakdown voltage: 189V Max. forward impulse current: 1.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBL10 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat Max. off-state voltage: 1kV Case: GBL Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward voltage: 1.1V Load current: 4A Max. forward impulse current: 150A Version: flat |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | |||||||||||||
| GBL10 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; 150A; GBL; THT Max. off-state voltage: 1kV Case: GBL Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward impulse current: 150A |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | |||||||||||||
|
MBR2545CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube Mounting: THT Max. forward impulse current: 200A Max. forward voltage: 0.82V Max. off-state voltage: 40V Load current: 12.5A x2 Max. load current: 25A Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: Schottky rectifying |
на замовлення 134 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
SMBJ60CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 6.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BAV103 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; MiniMELF; 1V Type of diode: switching Mounting: SMD Features of semiconductor devices: small signal Case: MiniMELF Max. forward voltage: 1V |
на замовлення 60000 шт: термін постачання 14-30 дні (днів) |
|
|||||||||||||
| DBL106G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 30A Case: DBL Kind of package: tube Max. forward voltage: 1.1V Electrical mounting: THT Version: DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRAD8150H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 8A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 150V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBPC2501 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A Version: square Kind of package: in-tray Case: GBPC Type of bridge rectifier: single-phase Max. forward impulse current: 0.3kA Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Leads: connectors FASTON Max. off-state voltage: 0.1kV Electrical mounting: THT Load current: 25A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DBL105G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 40A Version: DIP Case: DBL Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HDBL105G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 50A Version: DIP Case: DBL Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.7V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
TSM2312CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 33mΩ Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate charge: 14nC |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
GP1604H | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. load current: 16A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
UF1JLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 25ns; SOD123W; Ufmax: 1.5V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD123W Max. forward voltage: 1.5V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BZX85C3V9 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 3.9V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 3.9V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 335 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
SSL14 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Mounting: SMD Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying Max. forward impulse current: 50A Max. forward voltage: 0.39V Max. off-state voltage: 40V |
на замовлення 235 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
SF3004PT | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 30A; tube; TO247AD; 35ns Case: TO247AD Mounting: THT Kind of package: tube Reverse recovery time: 35ns Max. off-state voltage: 200V Load current: 30A Semiconductor structure: common cathode; double Type of diode: rectifying Features of semiconductor devices: superfast switching |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
| DBL155G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1.5A Max. forward impulse current: 50A Case: DBL Kind of package: tube Max. forward voltage: 1.1V Electrical mounting: THT Version: DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
SMCJ40A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SMCJ40AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SMBJ40A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.7A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
TSM043NB04CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB On-state resistance: 43.5mΩ Mounting: THT Power dissipation: 125W Gate charge: 74nC Polarisation: unipolar Drain current: 124A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
TSM043NB04LCZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB On-state resistance: 43.5mΩ Mounting: THT Power dissipation: 125W Gate charge: 76nC Polarisation: unipolar Drain current: 124A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSM045NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U On-state resistance: 5mΩ Mounting: SMD Power dissipation: 45W Gate charge: 104nC Polarisation: unipolar Drain current: 16A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tape Case: PDFN56U |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
BZX55B7V5 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 7.5V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 1090 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
BZT52C7V5 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 7.5V; SMD; SOD123F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
BZX55B8V2 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 8.2V; DO35; single diode |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||
|
BZX55C8V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 675 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
BZT52C8V2 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 8.2V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 409 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
BZT52C11 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 11V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 850 шт: термін постачання 14-30 дні (днів) |
|
| P4SMA27AH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 25.7V; 11A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 25.7V; 11A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX55C2V7 R0 |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Semiconductor structure: single diode
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 103+ | 4.35 грн |
| 141+ | 2.93 грн |
| BZX55C2V7 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Semiconductor structure: single diode
на замовлення 564 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.44 грн |
| 50+ | 8.34 грн |
| 100+ | 4.97 грн |
| 250+ | 3.99 грн |
| 430+ | 2.20 грн |
| MBR20H100CT |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BZX85C36 R0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 36V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 36V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 36V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 36V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 167 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 7.11 грн |
| 100+ | 5.53 грн |
| BZT52C36 RHG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123F; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.5W
Zener voltage: 36V
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123F; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.5W
Zener voltage: 36V
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
на замовлення 922 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 4.27 грн |
| 145+ | 2.89 грн |
| 250+ | 2.59 грн |
| SMAJ64A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| TSM2323CX RFG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 19nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 19nC
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.21 грн |
| 9+ | 51.50 грн |
| 50+ | 32.43 грн |
| 100+ | 28.39 грн |
| 500+ | 25.09 грн |
| BZX85C13 R0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 723 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.22 грн |
| 27+ | 15.68 грн |
| 100+ | 8.67 грн |
| 500+ | 5.68 грн |
| TSM090N03CP ROG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MBR745 |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Case: TO220AC
Semiconductor structure: single diode
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Max. load current: 15A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Case: TO220AC
Semiconductor structure: single diode
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Max. load current: 15A
Kind of package: tube
на замовлення 84 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.10 грн |
| 10+ | 52.24 грн |
| 50+ | 47.62 грн |
| SMAJ100CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BZT52B10S RRG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; SOD323F; reel,tape; single diode
Case: SOD323F
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±2%
Zener voltage: 10V
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; SOD323F; reel,tape; single diode
Case: SOD323F
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±2%
Zener voltage: 10V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| DBL156G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
товару немає в наявності
В кошику
од. на суму грн.
| BZS55C12 RAG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
товару немає в наявності
В кошику
од. на суму грн.
| DBL157G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
товару немає в наявності
В кошику
од. на суму грн.
| 1KSMB30A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 28.5V; 24.2A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 24.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: 1KSMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 28.5V; 24.2A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 24.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: 1KSMB
товару немає в наявності
В кошику
од. на суму грн.
| 1KSMB30AH |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 28.5V; 24.2A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 24.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Application: automotive industry
Manufacturer series: 1KSMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 28.5V; 24.2A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 24.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Application: automotive industry
Manufacturer series: 1KSMB
товару немає в наявності
В кошику
од. на суму грн.
| SMF36A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 40V; 3.4A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 3.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 40V; 3.4A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 3.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA10CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 29A
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Peak pulse power dissipation: 0.4kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 29A
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Peak pulse power dissipation: 0.4kW
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA100CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 3A
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 3A
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA10A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
товару немає в наявності
В кошику
од. на суму грн.
| SMDJ36AH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| 5.0SMDJ36A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
товару немає в наявності
В кошику
од. на суму грн.
| TESDU24V RGG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; 0201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 47W
Max. off-state voltage: 24V
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; 0201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 47W
Max. off-state voltage: 24V
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| TSZU52C4V3 RGG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.3V; SMD; 0603; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.3V; SMD; 0603; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| TSZU52C4V7 RGG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.7V; SMD; 0603; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.7V; SMD; 0603; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DBL205G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
товару немає в наявності
В кошику
од. на суму грн.
| TSM048NB06LCR RLG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
On-state resistance: 4.8mΩ
Mounting: SMD
Power dissipation: 45W
Gate charge: 105nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: PDFN56U
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
On-state resistance: 4.8mΩ
Mounting: SMD
Power dissipation: 45W
Gate charge: 105nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: PDFN56U
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 167.98 грн |
| 5+ | 140.30 грн |
| 25+ | 123.79 грн |
| SMAJ170A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ170CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
| GBL10 |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| GBL10 |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; 150A; GBL; THT
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward impulse current: 150A
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; 150A; GBL; THT
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward impulse current: 150A
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| MBR2545CT |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. off-state voltage: 40V
Load current: 12.5A x2
Max. load current: 25A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. off-state voltage: 40V
Load current: 12.5A x2
Max. load current: 25A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
на замовлення 134 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.87 грн |
| 5+ | 117.19 грн |
| 10+ | 107.29 грн |
| 25+ | 94.91 грн |
| 50+ | 86.65 грн |
| 100+ | 78.40 грн |
| SMBJ60CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товару немає в наявності
В кошику
од. на суму грн.
| BAV103 L0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; MiniMELF; 1V
Type of diode: switching
Mounting: SMD
Features of semiconductor devices: small signal
Case: MiniMELF
Max. forward voltage: 1V
Category: SMD universal diodes
Description: Diode: switching; SMD; MiniMELF; 1V
Type of diode: switching
Mounting: SMD
Features of semiconductor devices: small signal
Case: MiniMELF
Max. forward voltage: 1V
на замовлення 60000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20000+ | 2.39 грн |
| DBL106G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
товару немає в наявності
В кошику
од. на суму грн.
| MBRAD8150H |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| GBPC2501 |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Version: square
Kind of package: in-tray
Case: GBPC
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Leads: connectors FASTON
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 25A
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Version: square
Kind of package: in-tray
Case: GBPC
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Leads: connectors FASTON
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 25A
товару немає в наявності
В кошику
од. на суму грн.
| DBL105G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 40A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 40A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
товару немає в наявності
В кошику
од. на суму грн.
| HDBL105G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| TSM2312CX RFG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 14nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 14nC
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.21 грн |
| 11+ | 41.18 грн |
| GP1604H |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| UF1JLWH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 25ns; SOD123W; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD123W
Max. forward voltage: 1.5V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 25ns; SOD123W; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD123W
Max. forward voltage: 1.5V
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX85C3V9 R0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 335 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 7.11 грн |
| 100+ | 5.53 грн |
| 250+ | 4.87 грн |
| SSL14 |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Mounting: SMD
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Max. forward voltage: 0.39V
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Mounting: SMD
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Max. forward voltage: 0.39V
Max. off-state voltage: 40V
на замовлення 235 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.22 грн |
| 34+ | 12.38 грн |
| 100+ | 9.74 грн |
| SF3004PT |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD; 35ns
Case: TO247AD
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD; 35ns
Case: TO247AD
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: superfast switching
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.19 грн |
| DBL155G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ40A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ40AH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ40A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| TSM043NB04CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 74nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 74nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
товару немає в наявності
В кошику
од. на суму грн.
| TSM043NB04LCZ C0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 76nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 76nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
товару немає в наявності
В кошику
од. на суму грн.
| TSM045NB06CR RLG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
On-state resistance: 5mΩ
Mounting: SMD
Power dissipation: 45W
Gate charge: 104nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: PDFN56U
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
On-state resistance: 5mΩ
Mounting: SMD
Power dissipation: 45W
Gate charge: 104nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: PDFN56U
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B7V5 A0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 1090 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 145+ | 3.16 грн |
| 150+ | 2.80 грн |
| 500+ | 2.47 грн |
| BZT52C7V5 RHG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.33 грн |
| BZX55B8V2 A0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| BZX55C8V2 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 675 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 130+ | 3.51 грн |
| 155+ | 2.68 грн |
| 500+ | 2.36 грн |
| BZT52C8V2 RHG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 4.27 грн |
| 145+ | 2.89 грн |
| 250+ | 2.53 грн |
| BZT52C11 RHG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 850 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 4.27 грн |
| 145+ | 2.89 грн |
| 250+ | 2.53 грн |


























