Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (49826) > Сторінка 829 з 831
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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| SMDJ36AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 40V; 51.6A; unidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 51.6A Manufacturer series: SMDJ Peak pulse power dissipation: 3kW Application: automotive industry Case: DO214AB; SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 5.0SMDJ36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 86.1A Manufacturer series: 5.0SMDJ Peak pulse power dissipation: 5kW Case: DO214AB; SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TESDU24V RGG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 47W; 25V; bidirectional; 0201; reel,tape Type of diode: TVS Max. off-state voltage: 24V Breakdown voltage: 25V Semiconductor structure: bidirectional Case - inch: 0201 Case - mm: 0603 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Peak pulse power dissipation: 47W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSZU52C4V3 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 4.3V; SMD; 0603; reel,tape; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Case - inch: 0603 Case - mm: 1608 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSZU52C4V7 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 4.7V; SMD; 0603; reel,tape; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case - inch: 0603 Case - mm: 1608 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DBL205G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 2A Max. forward impulse current: 50A Case: DBL Kind of package: tube Max. forward voltage: 1.15V Electrical mounting: THT Version: DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM048NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Kind of channel: enhancement Type of transistor: N-MOSFET Case: PDFN56U Kind of package: tape Mounting: SMD Polarisation: unipolar Gate charge: 105nC On-state resistance: 4.8mΩ Power dissipation: 45W Drain current: 16A Gate-source voltage: ±20V Drain-source voltage: 60V |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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| SMAJ170A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 189V; 1.1A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 170V Breakdown voltage: 189V Max. forward impulse current: 1.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ170CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 189V; 1.1A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 170V Breakdown voltage: 189V Max. forward impulse current: 1.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1N5408G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD Mounting: THT Load current: 3A Max. forward impulse current: 125A Max. off-state voltage: 1kV Case: DO201AD Type of diode: rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBL10 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat Max. off-state voltage: 1kV Case: GBL Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward voltage: 1.1V Load current: 4A Max. forward impulse current: 150A Version: flat |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | |||||||||||||
| GBL10 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; 150A; GBL; THT Max. off-state voltage: 1kV Case: GBL Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward impulse current: 150A |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | |||||||||||||
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MBR2545CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube Mounting: THT Type of diode: Schottky rectifying Max. forward voltage: 0.82V Max. off-state voltage: 40V Load current: 12.5A x2 Max. load current: 25A Max. forward impulse current: 200A Case: TO220AB Kind of package: tube Semiconductor structure: common cathode; double |
на замовлення 40 шт: термін постачання 14-30 дні (днів) |
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| SMBJ60CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 6.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BAV103 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50ns; MiniMELF,SOD80; 1V; 4A Type of diode: switching Mounting: SMD Reverse recovery time: 50ns Case: MiniMELF; SOD80 Max. forward voltage: 1V Max. forward impulse current: 4A |
на замовлення 82500 шт: термін постачання 14-30 дні (днів) |
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| DBL106G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 30A Case: DBL Kind of package: tube Max. forward voltage: 1.1V Electrical mounting: THT Version: DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRAD8150H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 8A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 150V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBPC2501 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: in-tray Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DBL105G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 40A Version: DIP Case: DBL Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HDBL105G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 50A Version: DIP Case: DBL Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.7V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM2312CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 33mΩ Mounting: SMD Gate charge: 14nC Kind of package: tape Kind of channel: enhancement |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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GP1604H | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. load current: 16A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| UF1JLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 25ns; SOD123W; Ufmax: 1.5V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD123W Max. forward voltage: 1.5V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX85C3V9 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 3.9V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 3.9V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 335 шт: термін постачання 14-30 дні (днів) |
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SSL14 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Mounting: SMD Case: SMA Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.39V Load current: 1A Max. forward impulse current: 50A Max. off-state voltage: 40V Kind of package: reel; tape |
на замовлення 238 шт: термін постачання 14-30 дні (днів) |
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SF3004PT | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 30A; tube; TO247AD; 35ns Case: TO247AD Mounting: THT Kind of package: tube Reverse recovery time: 35ns Max. off-state voltage: 200V Load current: 30A Semiconductor structure: common cathode; double Type of diode: rectifying Features of semiconductor devices: superfast switching |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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| DBL155G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1.5A Max. forward impulse current: 50A Case: DBL Kind of package: tube Max. forward voltage: 1.1V Electrical mounting: THT Version: DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ40A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ40AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMBJ40A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.7A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM043NB04CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO220AB Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 74nC On-state resistance: 43.5mΩ Power dissipation: 125W Drain current: 124A Gate-source voltage: ±20V Drain-source voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSM043NB04LCZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO220AB Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 76nC On-state resistance: 43.5mΩ Power dissipation: 125W Drain current: 124A Gate-source voltage: ±20V Drain-source voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSM045NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Kind of channel: enhancement Type of transistor: N-MOSFET Case: PDFN56U Kind of package: tape Mounting: SMD Polarisation: unipolar Gate charge: 104nC On-state resistance: 5mΩ Power dissipation: 45W Drain current: 16A Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55B7V5 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 7.5V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 1090 шт: термін постачання 14-30 дні (днів) |
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BZT52C7V5 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 7.5V; SMD; SOD123F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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BZX55B8V2 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 8.2V; DO35; single diode |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||
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BZX55C8V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 1155 шт: термін постачання 14-30 дні (днів) |
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BZT52C8V2 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 8.2V; SMD; SOD123F; reel,tape; single diode |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||
| BZT52C11 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 11V; SMD; SOD123F; reel,tape; single diode |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||
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BZX55C22 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 22V; tape; DO35; single diode Mounting: THT Tolerance: ±5% Case: DO35 Kind of package: tape Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V |
на замовлення 145 шт: термін постачання 14-30 дні (днів) |
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BZT52C22 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 22V; SMD; SOD123F; reel,tape; single diode Mounting: SMD Tolerance: ±5% Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V |
на замовлення 597 шт: термін постачання 14-30 дні (днів) |
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| BZS55C15 RXG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 15V; SMD; 1206; reel,tape; single diode |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||
| BZS55C15 RAG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; 1206; reel,tape; single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BZX55B10 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; DO35; single diode |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||
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BZX55B18 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 18V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 1100 шт: термін постачання 14-30 дні (днів) |
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BZX55C6V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 1421 шт: термін постачання 14-30 дні (днів) |
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BZX55C6V2 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 230 шт: термін постачання 14-30 дні (днів) |
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BZT52B6V2-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.41W; 6.2V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 1825 шт: термін постачання 14-30 дні (днів) |
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BZT52B6V2S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 6.2V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 973 шт: термін постачання 14-30 дні (днів) |
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BZX55B24 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 24V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
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BZX55C27 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 27V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||
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P6SMB33A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P6SMB |
на замовлення 623 шт: термін постачання 14-30 дні (днів) |
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| 1KSMB33A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 31.4V; 21.9A; unidirectional; SMB; 1KSMB Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 21.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: 1KSMB |
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| 1KSMB33AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 31.4V; 21.9A; unidirectional; SMB; 1KSMB Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 21.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Application: automotive industry Manufacturer series: 1KSMB |
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| P6SMB33AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Tolerance: ±5% Application: automotive industry Manufacturer series: P6SMB |
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Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| RS1G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
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RS1G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
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| RS1GL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 0.8A; 150ns; subSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Reverse recovery time: 150ns Semiconductor structure: single diode Case: subSMA Max. forward voltage: 1.3V Kind of package: reel; tape |
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| RS1GAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape |
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| RS1GALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| SMDJ36AH |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Application: automotive industry
Case: DO214AB; SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Application: automotive industry
Case: DO214AB; SMC
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| 5.0SMDJ36A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
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| TESDU24V RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; 0201; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 47W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; 0201; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 47W
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| TSZU52C4V3 RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.3V; SMD; 0603; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.3V; SMD; 0603; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Kind of package: reel; tape
Semiconductor structure: single diode
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| TSZU52C4V7 RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.7V; SMD; 0603; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 4.7V; SMD; 0603; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Kind of package: reel; tape
Semiconductor structure: single diode
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| DBL205G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
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| TSM048NB06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN56U
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 105nC
On-state resistance: 4.8mΩ
Power dissipation: 45W
Drain current: 16A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN56U
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 105nC
On-state resistance: 4.8mΩ
Power dissipation: 45W
Drain current: 16A
Gate-source voltage: ±20V
Drain-source voltage: 60V
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 168.76 грн |
| 5+ | 140.95 грн |
| 25+ | 124.37 грн |
| SMAJ170A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
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| SMAJ170CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189V; 1.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
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| 1N5408G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Mounting: THT
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Mounting: THT
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
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| GBL10 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
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Мінімальне замовлення: 1200 шт
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| GBL10 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; 150A; GBL; THT
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward impulse current: 150A
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; 150A; GBL; THT
Max. off-state voltage: 1kV
Case: GBL
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward impulse current: 150A
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Мінімальне замовлення: 1200 шт
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| MBR2545CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.82V
Max. off-state voltage: 40V
Load current: 12.5A x2
Max. load current: 25A
Max. forward impulse current: 200A
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.82V
Max. off-state voltage: 40V
Load current: 12.5A x2
Max. load current: 25A
Max. forward impulse current: 200A
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 138.40 грн |
| 5+ | 119.39 грн |
| 10+ | 111.10 грн |
| 25+ | 97.01 грн |
| SMBJ60CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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| BAV103 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 50ns; MiniMELF,SOD80; 1V; 4A
Type of diode: switching
Mounting: SMD
Reverse recovery time: 50ns
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 4A
Category: SMD universal diodes
Description: Diode: switching; SMD; 50ns; MiniMELF,SOD80; 1V; 4A
Type of diode: switching
Mounting: SMD
Reverse recovery time: 50ns
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 4A
на замовлення 82500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20000+ | 2.30 грн |
| DBL106G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
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| MBRAD8150H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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| GBPC2501 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: in-tray
Features of semiconductor devices: glass passivated
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| DBL105G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 40A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 40A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
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| HDBL105G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Version: DIP
Case: DBL
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Features of semiconductor devices: glass passivated
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| TSM2312CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.54 грн |
| 11+ | 41.37 грн |
| GP1604H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Application: automotive industry
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| UF1JLWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 25ns; SOD123W; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD123W
Max. forward voltage: 1.5V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 25ns; SOD123W; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD123W
Max. forward voltage: 1.5V
Kind of package: reel; tape
Application: automotive industry
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| BZX85C3V9 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 335 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 7.14 грн |
| 100+ | 5.56 грн |
| 250+ | 4.89 грн |
| SSL14 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Mounting: SMD
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Load current: 1A
Max. forward impulse current: 50A
Max. off-state voltage: 40V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Mounting: SMD
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Load current: 1A
Max. forward impulse current: 50A
Max. off-state voltage: 40V
Kind of package: reel; tape
на замовлення 238 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.64 грн |
| 37+ | 11.36 грн |
| 100+ | 8.37 грн |
| SF3004PT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD; 35ns
Case: TO247AD
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD; 35ns
Case: TO247AD
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: superfast switching
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.22 грн |
| DBL155G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.1V
Electrical mounting: THT
Version: DIP
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| SMCJ40A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ40AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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| SMBJ40A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| TSM043NB04CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 43.5mΩ
Power dissipation: 125W
Drain current: 124A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 43.5mΩ
Power dissipation: 125W
Drain current: 124A
Gate-source voltage: ±20V
Drain-source voltage: 40V
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| TSM043NB04LCZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 76nC
On-state resistance: 43.5mΩ
Power dissipation: 125W
Drain current: 124A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 76nC
On-state resistance: 43.5mΩ
Power dissipation: 125W
Drain current: 124A
Gate-source voltage: ±20V
Drain-source voltage: 40V
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| TSM045NB06CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN56U
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 104nC
On-state resistance: 5mΩ
Power dissipation: 45W
Drain current: 16A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN56U
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 104nC
On-state resistance: 5mΩ
Power dissipation: 45W
Drain current: 16A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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| BZX55B7V5 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 1090 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 145+ | 3.17 грн |
| 150+ | 2.81 грн |
| 500+ | 2.48 грн |
| BZT52C7V5 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.36 грн |
| BZX55B8V2 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode
товару немає в наявності
Мінімальне замовлення: 20 шт
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| BZX55C8V2 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 1155 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 130+ | 3.53 грн |
| 155+ | 2.69 грн |
| 500+ | 2.37 грн |
| BZT52C8V2 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123F; reel,tape; single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123F; reel,tape; single diode
товару немає в наявності
Мінімальне замовлення: 10 шт
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| BZT52C11 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; SOD123F; reel,tape; single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; SOD123F; reel,tape; single diode
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Мінімальне замовлення: 10 шт
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| BZX55C22 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; tape; DO35; single diode
Mounting: THT
Tolerance: ±5%
Case: DO35
Kind of package: tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; tape; DO35; single diode
Mounting: THT
Tolerance: ±5%
Case: DO35
Kind of package: tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
на замовлення 145 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 130+ | 3.53 грн |
| 145+ | 2.49 грн |
| BZT52C22 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123F; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123F; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
на замовлення 597 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 4.29 грн |
| 145+ | 2.90 грн |
| 250+ | 2.30 грн |
| BZS55C15 RXG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; 1206; reel,tape; single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; 1206; reel,tape; single diode
товару немає в наявності
Мінімальне замовлення: 10 шт
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| BZS55C15 RAG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; 1206; reel,tape; single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; 1206; reel,tape; single diode
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| BZX55B10 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; DO35; single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; DO35; single diode
товару немає в наявності
Мінімальне замовлення: 20 шт
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| BZX55B18 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 1100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 145+ | 3.17 грн |
| 150+ | 2.81 грн |
| 500+ | 2.48 грн |
| BZX55C6V2 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1421 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.39 грн |
| 47+ | 8.87 грн |
| 100+ | 5.30 грн |
| 250+ | 4.25 грн |
| 500+ | 3.59 грн |
| 1000+ | 3.02 грн |
| BZX55C6V2 R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 118+ | 3.81 грн |
| 163+ | 2.55 грн |
| BZT52B6V2-G RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 6.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 6.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 1825 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 10.18 грн |
| 85+ | 5.17 грн |
| 105+ | 4.11 грн |
| 500+ | 3.70 грн |
| BZT52B6V2S RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 973 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.82 грн |
| 66+ | 6.30 грн |
| 100+ | 4.15 грн |
| 250+ | 3.51 грн |
| 500+ | 3.09 грн |
| BZX55B24 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
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| BZX55C27 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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Мінімальне замовлення: 20 шт
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| P6SMB33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
на замовлення 623 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.86 грн |
| 43+ | 9.87 грн |
| 100+ | 7.21 грн |
| 250+ | 6.47 грн |
| 500+ | 5.97 грн |
| 1KSMB33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 31.4V; 21.9A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 21.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: 1KSMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 31.4V; 21.9A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 21.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: 1KSMB
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| 1KSMB33AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 31.4V; 21.9A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 21.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Application: automotive industry
Manufacturer series: 1KSMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 31.4V; 21.9A; unidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 21.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Application: automotive industry
Manufacturer series: 1KSMB
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| P6SMB33AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Application: automotive industry
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Application: automotive industry
Manufacturer series: P6SMB
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Мінімальне замовлення: 3000 шт
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| RS1G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| RS1G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| RS1GL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 150ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 150ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1GAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1GALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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