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TLD6S10AH TAIWAN SEMICONDUCTOR TLD6S10AH SERIES_D2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD6S
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TLD8S10AH TAIWAN SEMICONDUCTOR TLD8S10AH SERIES_E2310.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD8S
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TSM4946DCS RLG TSM4946DCS RLG TAIWAN SEMICONDUCTOR TSM4946DCS_C2303.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 2486 шт:
термін постачання 14-30 дні (днів)
6+81.28 грн
10+62.06 грн
Мінімальне замовлення: 6 шт
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SFAS804GH SFAS804GH TAIWAN SEMICONDUCTOR SFAS801GH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 8A
Max. off-state voltage: 200V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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SFAS805GH SFAS805GH TAIWAN SEMICONDUCTOR SFAS801GH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Max. forward voltage: 1.3V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 300V
Load current: 8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: D2PAK
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
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SFAS806GH SFAS806GH TAIWAN SEMICONDUCTOR SFAS801GH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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SFAS808GH SFAS808GH TAIWAN SEMICONDUCTOR SFAS801GH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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TSM60NB380CP ROG TSM60NB380CP ROG TAIWAN SEMICONDUCTOR pdf.php?pn=TSM60NB380CP Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19.4nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
4+142.70 грн
5+119.93 грн
25+105.67 грн
Мінімальне замовлення: 4 шт
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HERF1005GH TAIWAN SEMICONDUCTOR HERF1001G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 50ns
Application: automotive industry
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SMAJ45CA R3G SMAJ45CA R3G TAIWAN SEMICONDUCTOR Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; SMD; Urmax: 45V; bidirectional; DO214AC,SMA; Ifsm: 5.5A
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Operating temperature: -55...150°C
Number of channels: 1
на замовлення 32400 шт:
термін постачання 14-30 дні (днів)
19842+1.84 грн
Мінімальне замовлення: 19842 шт
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TSSE3H45H TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Kind of package: reel; tape
Application: automotive industry
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SK520CH SK520CH TAIWAN SEMICONDUCTOR SK52CH SERIES_C2311.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 5A; reel,tape
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 120A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 5A
на замовлення 87 шт:
термін постачання 14-30 дні (днів)
9+52.38 грн
14+30.19 грн
Мінімальне замовлення: 9 шт
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1SMA5927 1SMA5927 TAIWAN SEMICONDUCTOR 1SMA5926 SERIES_L2102.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
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1SMA5938 M2G 1SMA5938 M2G TAIWAN SEMICONDUCTOR 1SMA5935-M2G.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
8+56.00 грн
Мінімальне замовлення: 8 шт
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TS10KL100 D3 TAIWAN SEMICONDUCTOR TS10KLxx.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. forward impulse current: 180A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 10A
Kind of package: tube
Case: KBJL
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SFAF508GH TAIWAN SEMICONDUCTOR SFAF501G%20SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; ITO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 35ns
Application: automotive industry
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BZT52C10 RHG BZT52C10 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C2V7 RHG BZT52C2V7 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 959 шт:
термін постачання 14-30 дні (днів)
105+4.34 грн
145+2.94 грн
250+2.61 грн
Мінімальне замовлення: 105 шт
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TSM120N06LCS RLG TSM120N06LCS RLG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 37nC
Kind of package: tape
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TSM120N06LCR RLG TAIWAN SEMICONDUCTOR TSM120N06LCR_A1610.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36.5nC
Kind of package: tape
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KBL404G KBL404G TAIWAN SEMICONDUCTOR KBL407G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Case: KBL
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 4A
Kind of package: in-tray
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KBL402G TAIWAN SEMICONDUCTOR KBL407G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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TPMR6GH TPMR6GH TAIWAN SEMICONDUCTOR TPMR6GH SERIES_B2309.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; 60ns; TO277A; Ufmax: 1.8V
Mounting: SMD
Max. forward voltage: 1.8V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
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TPMR6JH TPMR6JH TAIWAN SEMICONDUCTOR TPMR6GH SERIES_B2309.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 60ns; TO277A; Ufmax: 1V; reel,tape
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
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RABS20M RABS20M TAIWAN SEMICONDUCTOR RABS20M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Kind of package: reel; tape
Case: ABS
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.16V
Features of semiconductor devices: glass passivated
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
12+38.84 грн
18+23.99 грн
100+14.17 грн
Мінімальне замовлення: 12 шт
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RABS20M M3G RABS20M M3G TAIWAN SEMICONDUCTOR RABS20M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Kind of package: reel; tape
Case: ABS
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.16V
Features of semiconductor devices: glass passivated
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
22+21.40 грн
33+12.92 грн
Мінімальне замовлення: 22 шт
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B0530WS RRG B0530WS RRG TAIWAN SEMICONDUCTOR B0530WS-RRG.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323F; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Max. forward impulse current: 5A
Max. forward voltage: 0.47V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Capacitance: 0.16nF
Type of diode: Schottky switching
на замовлення 10225 шт:
термін постачання 14-30 дні (днів)
25+18.06 грн
46+9.23 грн
62+6.79 грн
100+5.85 грн
500+4.02 грн
1000+3.64 грн
3000+3.12 грн
6000+2.83 грн
9000+2.68 грн
Мінімальне замовлення: 25 шт
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SK210A SK210A TAIWAN SEMICONDUCTOR SK210A%20N0190%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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TSM070NB04LCR RLG TAIWAN SEMICONDUCTOR TSM070NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: tape
Kind of channel: enhancement
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TSM250N02CX RFG TSM250N02CX RFG TAIWAN SEMICONDUCTOR TSM250N02CX_B1811.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM2NB60CP ROG TSM2NB60CP ROG TAIWAN SEMICONDUCTOR TSM2NB60CP_A2208.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of package: tape
Kind of channel: enhancement
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TSM025NB04LCR RLG TAIWAN SEMICONDUCTOR TSM025NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX533 RFG TS5205CX533 RFG TAIWAN SEMICONDUCTOR TS5205_I15.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
10+47.87 грн
14+31.03 грн
Мінімальне замовлення: 10 шт
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GBPC2506 TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC2506W TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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TSM110NB04LCR RLG TAIWAN SEMICONDUCTOR TSM110NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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SMCJ24CA SMCJ24CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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LL4006G L0G LL4006G L0G TAIWAN SEMICONDUCTOR LL4001G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
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 Мінімальне замовлення: 5000 шт
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SMCJ26CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ26CAH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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TQM025NH04LCR RLG TAIWAN SEMICONDUCTOR TQM025NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 136W
Case: PDFN56U
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX5 RFG TS5205CX5 RFG TAIWAN SEMICONDUCTOR TS5205-DTE.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.165V
Output voltage: 1.5...15V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
12+39.74 грн
14+31.03 грн
25+27.34 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
TS5205CX5 RFG TS5205CX5 RFG TAIWAN SEMICONDUCTOR TS5205_I15.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.4÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.275V
Output voltage: 2.4...15V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
9+51.48 грн
13+32.88 грн
25+28.26 грн
100+20.63 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR TSM033NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX550 RFG TS5205CX550 RFG TAIWAN SEMICONDUCTOR TS5205_I15.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
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BYG21M BYG21M TAIWAN SEMICONDUCTOR BYG21M-R3G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 13pF
Case: SMA
Max. forward voltage: 1.6V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 275 шт:
термін постачання 14-30 дні (днів)
18+26.19 грн
25+17.19 грн
100+10.57 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
BYG21MH BYG21MH TAIWAN SEMICONDUCTOR BYG21MH_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.6V
Kind of package: reel; tape
Application: automotive industry
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PU2BAH PU2BAH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 0.93V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.93V
Kind of package: reel; tape
Application: automotive industry
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TQL851CSV33 RLG TQL851CSV33 RLG TAIWAN SEMICONDUCTOR TQL851CSV33_A2206.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 3.3V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
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TQL851CSV50 RLG TQL851CSV50 RLG TAIWAN SEMICONDUCTOR TQL851CSV50_A2206.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
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PU2DBH PU2DBH TAIWAN SEMICONDUCTOR PU2BBH SERIES_B2109.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 0.73V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
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ES2AAH ES2AAH TAIWAN SEMICONDUCTOR ES2AAH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Max. off-state voltage: 50V
Load current: 2A
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
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BZT52B15-G RHG BZT52B15-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G SERIES_H2002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 573 шт:
термін постачання 14-30 дні (днів)
28+16.26 грн
43+9.90 грн
54+7.78 грн
100+5.37 грн
500+4.37 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
SMBJ75CA M4G SMBJ75CA M4G TAIWAN SEMICONDUCTOR SMBJ%20SERIES_R2104.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3V; 5.2A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
12438+2.91 грн
Мінімальне замовлення: 12438 шт
В кошику  од. на суму  грн.
1.5SMC15A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 1.5SMC.pdf 1.5SMCx.pdf 1.5SMC SERIES_S2207.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC15A V6G TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 74A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: SMC
Leakage current: 1µA
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
9000+4.37 грн
Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
TS2937CZ33 C0G TS2937CZ33 C0G TAIWAN SEMICONDUCTOR TS2937_E15.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
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SMDJ26A TAIWAN SEMICONDUCTOR littelfuse-tvs-diode-smdj-datasheet?assetguid=2d9772b3-822b-4362-914d-b74e0a706638 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; 71.3A; unidirectional; DO214AB,SMC; SMDJ
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 71.3A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
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BZD27C16PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123W; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD123W
Kind of package: reel; tape
Semiconductor structure: single diode
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US1M US1M TAIWAN SEMICONDUCTOR US1A SERIES_N2102.pdf us1a.pdf US1M.pdf 5399_US1M.pdf 5272_US1M.pdf 1655_US1M.pdf 1778294620314235.pdf ds16008.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
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TLD6S10AH TLD6S10AH SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD6S
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TLD8S10AH TLD8S10AH SERIES_E2310.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD8S
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TSM4946DCS RLG TSM4946DCS_C2303.pdf
TSM4946DCS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 2486 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+81.28 грн
10+62.06 грн
Мінімальне замовлення: 6 шт
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SFAS804GH SFAS801GH SERIES_A2103.pdf
SFAS804GH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 8A
Max. off-state voltage: 200V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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SFAS805GH SFAS801GH SERIES_A2103.pdf
SFAS805GH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Max. forward voltage: 1.3V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 300V
Load current: 8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: D2PAK
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
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SFAS806GH SFAS801GH SERIES_A2103.pdf
SFAS806GH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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SFAS808GH SFAS801GH SERIES_A2103.pdf
SFAS808GH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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TSM60NB380CP ROG pdf.php?pn=TSM60NB380CP
TSM60NB380CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19.4nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+142.70 грн
5+119.93 грн
25+105.67 грн
Мінімальне замовлення: 4 шт
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HERF1005GH HERF1001G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 50ns
Application: automotive industry
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SMAJ45CA R3G
SMAJ45CA R3G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; SMD; Urmax: 45V; bidirectional; DO214AC,SMA; Ifsm: 5.5A
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Operating temperature: -55...150°C
Number of channels: 1
на замовлення 32400 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
19842+1.84 грн
Мінімальне замовлення: 19842 шт
В кошику  од. на суму  грн.
TSSE3H45H
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Kind of package: reel; tape
Application: automotive industry
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SK520CH SK52CH SERIES_C2311.pdf
SK520CH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 5A; reel,tape
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 120A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 5A
на замовлення 87 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+52.38 грн
14+30.19 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
1SMA5927 1SMA5926 SERIES_L2102.pdf
1SMA5927
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
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1SMA5938 M2G 1SMA5935-M2G.pdf
1SMA5938 M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+56.00 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
TS10KL100 D3 TS10KLxx.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. forward impulse current: 180A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 10A
Kind of package: tube
Case: KBJL
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SFAF508GH SFAF501G%20SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; ITO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 35ns
Application: automotive industry
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BZT52C10 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C10 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C2V7 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C2V7 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 959 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
105+4.34 грн
145+2.94 грн
250+2.61 грн
Мінімальне замовлення: 105 шт
В кошику  од. на суму  грн.
TSM120N06LCS RLG
TSM120N06LCS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 37nC
Kind of package: tape
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TSM120N06LCR RLG TSM120N06LCR_A1610.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36.5nC
Kind of package: tape
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KBL404G KBL407G_ser.pdf
KBL404G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Case: KBL
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 4A
Kind of package: in-tray
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KBL402G KBL407G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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TPMR6GH TPMR6GH SERIES_B2309.pdf
TPMR6GH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; 60ns; TO277A; Ufmax: 1.8V
Mounting: SMD
Max. forward voltage: 1.8V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
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TPMR6JH TPMR6GH SERIES_B2309.pdf
TPMR6JH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 60ns; TO277A; Ufmax: 1V; reel,tape
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
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RABS20M RABS20M.pdf
RABS20M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Kind of package: reel; tape
Case: ABS
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.16V
Features of semiconductor devices: glass passivated
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+38.84 грн
18+23.99 грн
100+14.17 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
RABS20M M3G RABS20M.pdf
RABS20M M3G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Kind of package: reel; tape
Case: ABS
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.16V
Features of semiconductor devices: glass passivated
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
22+21.40 грн
33+12.92 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
B0530WS RRG B0530WS-RRG.pdf
B0530WS RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323F; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Max. forward impulse current: 5A
Max. forward voltage: 0.47V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Capacitance: 0.16nF
Type of diode: Schottky switching
на замовлення 10225 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
25+18.06 грн
46+9.23 грн
62+6.79 грн
100+5.85 грн
500+4.02 грн
1000+3.64 грн
3000+3.12 грн
6000+2.83 грн
9000+2.68 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
SK210A SK210A%20N0190%20REV.A.pdf
SK210A
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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TSM070NB04LCR RLG TSM070NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: tape
Kind of channel: enhancement
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TSM250N02CX RFG TSM250N02CX_B1811.pdf
TSM250N02CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM2NB60CP ROG TSM2NB60CP_A2208.pdf
TSM2NB60CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of package: tape
Kind of channel: enhancement
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TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX533 RFG TS5205_I15.pdf
TS5205CX533 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+47.87 грн
14+31.03 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
GBPC2506 GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC2506W GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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SMCJ24CA SMCJ.pdf
SMCJ24CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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LL4006G L0G LL4001G.pdf
LL4006G L0G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
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SMCJ26CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ26CAH SMCJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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TQM025NH04LCR RLG TQM025NH04LCR_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 136W
Case: PDFN56U
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX5 RFG TS5205-DTE.pdf
TS5205CX5 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.165V
Output voltage: 1.5...15V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+39.74 грн
14+31.03 грн
25+27.34 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
TS5205CX5 RFG TS5205_I15.pdf
TS5205CX5 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.4÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.275V
Output voltage: 2.4...15V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+51.48 грн
13+32.88 грн
25+28.26 грн
100+20.63 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX550 RFG TS5205_I15.pdf
TS5205CX550 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
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BYG21M BYG21M-R3G.pdf
BYG21M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 13pF
Case: SMA
Max. forward voltage: 1.6V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 275 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+26.19 грн
25+17.19 грн
100+10.57 грн
Мінімальне замовлення: 18 шт
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BYG21MH BYG21MH_A2102.pdf
BYG21MH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.6V
Kind of package: reel; tape
Application: automotive industry
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PU2BAH
PU2BAH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 0.93V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.93V
Kind of package: reel; tape
Application: automotive industry
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TQL851CSV33 RLG TQL851CSV33_A2206.pdf
TQL851CSV33 RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 3.3V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
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TQL851CSV50 RLG TQL851CSV50_A2206.pdf
TQL851CSV50 RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
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PU2DBH PU2BBH SERIES_B2109.pdf
PU2DBH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 0.73V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
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ES2AAH ES2AAH SERIES_A2102.pdf
ES2AAH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Max. off-state voltage: 50V
Load current: 2A
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
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BZT52B15-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B15-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 573 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
28+16.26 грн
43+9.90 грн
54+7.78 грн
100+5.37 грн
500+4.37 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
SMBJ75CA M4G SMBJ%20SERIES_R2104.pdf
SMBJ75CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3V; 5.2A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12438+2.91 грн
Мінімальне замовлення: 12438 шт
В кошику  од. на суму  грн.
1.5SMC15A littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 1.5SMC.pdf 1.5SMCx.pdf 1.5SMC SERIES_S2207.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC15A V6G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 74A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: SMC
Leakage current: 1µA
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9000+4.37 грн
Мінімальне замовлення: 9000 шт
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TS2937CZ33 C0G TS2937_E15.pdf
TS2937CZ33 C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
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SMDJ26A littelfuse-tvs-diode-smdj-datasheet?assetguid=2d9772b3-822b-4362-914d-b74e0a706638
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; 71.3A; unidirectional; DO214AB,SMC; SMDJ
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 71.3A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
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BZD27C16PWH BZD27C11PWH SERIES_B2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123W; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD123W
Kind of package: reel; tape
Semiconductor structure: single diode
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US1M US1A SERIES_N2102.pdf us1a.pdf US1M.pdf 5399_US1M.pdf 5272_US1M.pdf 1655_US1M.pdf 1778294620314235.pdf ds16008.pdf
US1M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
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