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RABS20M RABS20M TAIWAN SEMICONDUCTOR RABS20M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: ABS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.16V
на замовлення 509 шт:
термін постачання 14-30 дні (днів)
12+39.20 грн
18+24.21 грн
100+14.31 грн
500+9.40 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
RABS20M M3G RABS20M M3G TAIWAN SEMICONDUCTOR RABS20M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: ABS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.16V
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
22+21.61 грн
33+13.04 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
B0530WS RRG B0530WS RRG TAIWAN SEMICONDUCTOR B0530WS-RRG.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323F; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Max. forward impulse current: 5A
Max. forward voltage: 0.47V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Capacitance: 0.16nF
Type of diode: Schottky switching
на замовлення 14275 шт:
термін постачання 14-30 дні (днів)
36+12.76 грн
52+8.21 грн
100+5.06 грн
500+3.66 грн
1000+3.19 грн
3000+2.62 грн
6000+2.56 грн
Мінімальне замовлення: 36 шт
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SK210A SK210A TAIWAN SEMICONDUCTOR SK210A%20N0190%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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TSM070NB04LCR RLG TAIWAN SEMICONDUCTOR TSM070NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: tape
Kind of channel: enhancement
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TSM250N02CX RFG TSM250N02CX RFG TAIWAN SEMICONDUCTOR TSM250N02CX_B1811.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM2NB60CP ROG TSM2NB60CP ROG TAIWAN SEMICONDUCTOR TSM2NB60CP_A2208.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of package: tape
Kind of channel: enhancement
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TSM025NB04LCR RLG TAIWAN SEMICONDUCTOR TSM025NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX533 RFG TS5205CX533 RFG TAIWAN SEMICONDUCTOR TS5205_I15.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
10+48.32 грн
14+31.32 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
GBPC2506 TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC2506W TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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TSM110NB04LCR RLG TAIWAN SEMICONDUCTOR TSM110NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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SMCJ24CA SMCJ24CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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LL4006G L0G LL4006G L0G TAIWAN SEMICONDUCTOR LL4001G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
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 Мінімальне замовлення: 5000 шт
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SMCJ26CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ26CAH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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TQM025NH04LCR RLG TAIWAN SEMICONDUCTOR TQM025NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 136W
Case: PDFN56U
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX5 RFG TS5205CX5 RFG TAIWAN SEMICONDUCTOR TS5205-DTE.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.165V
Output voltage: 1.5...15V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
12+40.11 грн
14+31.32 грн
25+27.60 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
TS5205CX5 RFG TS5205CX5 RFG TAIWAN SEMICONDUCTOR TS5205_I15.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.4÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.275V
Output voltage: 2.4...15V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
9+51.96 грн
13+33.18 грн
25+28.53 грн
100+20.82 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR TSM033NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX550 RFG TS5205CX550 RFG TAIWAN SEMICONDUCTOR TS5205_I15.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
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BYG21M BYG21M TAIWAN SEMICONDUCTOR BYG21M-R3G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 13pF
Case: SMA
Max. forward voltage: 1.6V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 275 шт:
термін постачання 14-30 дні (днів)
18+26.44 грн
25+17.35 грн
100+10.67 грн
Мінімальне замовлення: 18 шт
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BYG21MH BYG21MH TAIWAN SEMICONDUCTOR BYG21MH_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.6V
Kind of package: reel; tape
Application: automotive industry
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PU2BAH PU2BAH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 0.93V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.93V
Kind of package: reel; tape
Application: automotive industry
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TQL851CSV33 RLG TQL851CSV33 RLG TAIWAN SEMICONDUCTOR TQL851CSV33_A2206.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 3.3V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
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TQL851CSV50 RLG TQL851CSV50 RLG TAIWAN SEMICONDUCTOR TQL851CSV50_A2206.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
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PU2DBH PU2DBH TAIWAN SEMICONDUCTOR PU2BBH SERIES_B2109.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 0.73V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
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ES2AAH ES2AAH TAIWAN SEMICONDUCTOR ES2AAH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Max. off-state voltage: 50V
Load current: 2A
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
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BZT52B15-G RHG BZT52B15-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G SERIES_H2002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 573 шт:
термін постачання 14-30 дні (днів)
28+16.41 грн
43+9.99 грн
54+7.86 грн
100+5.42 грн
500+4.41 грн
Мінімальне замовлення: 28 шт
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SMBJ75CA M4G SMBJ75CA M4G TAIWAN SEMICONDUCTOR SMBJ%20SERIES_R2104.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3V; 5.2A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
12438+2.94 грн
Мінімальне замовлення: 12438 шт
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1.5SMC15A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 1.5SMC.pdf 1.5SMCx.pdf 1.5SMC SERIES_S2207.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC15A V6G TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 74A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: SMC
Leakage current: 1µA
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
9000+4.41 грн
Мінімальне замовлення: 9000 шт
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TS2937CZ33 C0G TS2937CZ33 C0G TAIWAN SEMICONDUCTOR TS2937_E15.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
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SMDJ26A TAIWAN SEMICONDUCTOR littelfuse-tvs-diode-smdj-datasheet?assetguid=2d9772b3-822b-4362-914d-b74e0a706638 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; 71.3A; unidirectional; DO214AB,SMC; SMDJ
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 71.3A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
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BZD27C16PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123W; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD123W
Kind of package: reel; tape
Semiconductor structure: single diode
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US1M US1M TAIWAN SEMICONDUCTOR US1A SERIES_N2102.pdf us1a.pdf US1M.pdf 5399_US1M.pdf 5272_US1M.pdf 1655_US1M.pdf 1778294620314235.pdf ds16008.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
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GBU404 TAIWAN SEMICONDUCTOR GBU407_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU402 TAIWAN SEMICONDUCTOR GBU407_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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BZT52C30 RHG BZT52C30 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
 Мінімальне замовлення: 500 шт
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SR510 SR510 TAIWAN SEMICONDUCTOR SR502 SERIES_J2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201AD; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
15+31.91 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
SR510H TAIWAN SEMICONDUCTOR SR502 SERIES_J2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; DO201AD; 850mV
Type of diode: Schottky rectifying
Mounting: THT
Case: DO201AD
Max. forward voltage: 0.85V
на замовлення 27500 шт:
термін постачання 14-30 дні (днів)
3750+11.76 грн
Мінімальне замовлення: 3750 шт
В кошику  од. на суму  грн.
TS15P06G TS15P06G TAIWAN SEMICONDUCTOR TS15P07G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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TSM60N900CP ROG TSM60N900CP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM60N900CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM60N900CI C0G TSM60N900CI C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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SMCJ18A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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P6SMB27A M4G P6SMB27A M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
товару немає в наявності
 Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
1V5KE400CA TAIWAN SEMICONDUCTOR 1V5KE SERIES_D2112.pdf ONSM-S-A0003585386-1.pdf?t.download=true&u=5oefqw Category: Diodes - Unclassified
Description: 1V5KE400CA
на замовлення 1250 шт:
термін постачання 14-30 дні (днів)
1250+30.17 грн
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
BZT52C5V6 RHG BZT52C5V6 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
50+9.12 грн
81+5.25 грн
100+4.23 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BZT52C5V6 RH BZT52C5V6 RH TAIWAN SEMICONDUCTOR BZT52C5V6-RH.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 680 шт:
термін постачання 14-30 дні (днів)
36+12.76 грн
55+7.79 грн
100+4.72 грн
500+3.31 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
ES1J ES1J TAIWAN SEMICONDUCTOR ES1J-D.PDF ES1(A-M)%20N0159%20REV.E.pdf ES1A SERIES_O2112.pdf es1a.pdf ES1J.pdf 5399_ES1J%20SMA.PDF GK-SMA_ES1A_THRU_ES1J-202604.pdf 1778296742646711.pdf 8-ES1A-ES1J(SMA).pdf ES1_1.pdf ES1J.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3581 шт:
термін постачання 14-30 дні (днів)
18+26.44 грн
27+15.75 грн
100+9.40 грн
500+7.03 грн
1000+6.26 грн
2000+5.59 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
BZX84C10 RFG BZX84C10 RFG TAIWAN SEMICONDUCTOR BZX84C2V4%20SERIES_F2001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Power dissipation: 0.3W
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 10V
Type of diode: Zener
на замовлення 910 шт:
термін постачання 14-30 дні (днів)
70+6.75 грн
115+3.84 грн
500+3.06 грн
Мінімальне замовлення: 70 шт
В кошику  од. на суму  грн.
P4SMA24A P4SMA24A TAIWAN SEMICONDUCTOR P4SMA.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12.6A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Breakdown voltage: 22.8V
Max. forward impulse current: 12.6A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
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P4SMA24CA P4SMA24CA TAIWAN SEMICONDUCTOR P4SMA.pdf tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 P4SMA SERIES_S2102.pdf SMAP4SMA24CASC.pdf eaton-p4sma-tvs-diode-power-esd-suppressor-data-sheet.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12.6A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Breakdown voltage: 22.8V
Max. forward impulse current: 12.6A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
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TS431BCX RFG TS431BCX RFG TAIWAN SEMICONDUCTOR TS431ACX-RFG.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
19+24.61 грн
27+15.83 грн
32+13.54 грн
50+11.77 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
SMAJ40A SMAJ40A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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MUR360S TAIWAN SEMICONDUCTOR MUR305S SERIES_J2212.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MUR360SBH MUR360SBH TAIWAN SEMICONDUCTOR MUR340SBH SERIES_B2211.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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MUR360SH TAIWAN SEMICONDUCTOR MUR305SH SERIES_B2212.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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TSSW3U60 TAIWAN SEMICONDUCTOR TSSW3U45 SERIES_B2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Kind of package: reel; tape
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RABS20M RABS20M.pdf
RABS20M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: ABS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.16V
на замовлення 509 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+39.20 грн
18+24.21 грн
100+14.31 грн
500+9.40 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
RABS20M M3G RABS20M.pdf
RABS20M M3G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: ABS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.16V
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
22+21.61 грн
33+13.04 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
B0530WS RRG B0530WS-RRG.pdf
B0530WS RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323F; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Max. forward impulse current: 5A
Max. forward voltage: 0.47V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Capacitance: 0.16nF
Type of diode: Schottky switching
на замовлення 14275 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.76 грн
52+8.21 грн
100+5.06 грн
500+3.66 грн
1000+3.19 грн
3000+2.62 грн
6000+2.56 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
SK210A SK210A%20N0190%20REV.A.pdf
SK210A
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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TSM070NB04LCR RLG TSM070NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: tape
Kind of channel: enhancement
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TSM250N02CX RFG TSM250N02CX_B1811.pdf
TSM250N02CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM2NB60CP ROG TSM2NB60CP_A2208.pdf
TSM2NB60CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of package: tape
Kind of channel: enhancement
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TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX533 RFG TS5205_I15.pdf
TS5205CX533 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+48.32 грн
14+31.32 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
GBPC2506 GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC2506W GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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SMCJ24CA SMCJ.pdf
SMCJ24CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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LL4006G L0G LL4001G.pdf
LL4006G L0G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
SMCJ26CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ26CAH SMCJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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TQM025NH04LCR RLG TQM025NH04LCR_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 136W
Case: PDFN56U
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX5 RFG TS5205-DTE.pdf
TS5205CX5 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.165V
Output voltage: 1.5...15V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+40.11 грн
14+31.32 грн
25+27.60 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
TS5205CX5 RFG TS5205_I15.pdf
TS5205CX5 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.4÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.275V
Output voltage: 2.4...15V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+51.96 грн
13+33.18 грн
25+28.53 грн
100+20.82 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
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TS5205CX550 RFG TS5205_I15.pdf
TS5205CX550 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
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BYG21M BYG21M-R3G.pdf
BYG21M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 13pF
Case: SMA
Max. forward voltage: 1.6V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 275 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+26.44 грн
25+17.35 грн
100+10.67 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
BYG21MH BYG21MH_A2102.pdf
BYG21MH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.6V
Kind of package: reel; tape
Application: automotive industry
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PU2BAH
PU2BAH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 0.93V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.93V
Kind of package: reel; tape
Application: automotive industry
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TQL851CSV33 RLG TQL851CSV33_A2206.pdf
TQL851CSV33 RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 3.3V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
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TQL851CSV50 RLG TQL851CSV50_A2206.pdf
TQL851CSV50 RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
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PU2DBH PU2BBH SERIES_B2109.pdf
PU2DBH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 0.73V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
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ES2AAH ES2AAH SERIES_A2102.pdf
ES2AAH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Max. off-state voltage: 50V
Load current: 2A
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
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BZT52B15-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B15-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 573 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
28+16.41 грн
43+9.99 грн
54+7.86 грн
100+5.42 грн
500+4.41 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
SMBJ75CA M4G SMBJ%20SERIES_R2104.pdf
SMBJ75CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3V; 5.2A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12438+2.94 грн
Мінімальне замовлення: 12438 шт
В кошику  од. на суму  грн.
1.5SMC15A littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 1.5SMC.pdf 1.5SMCx.pdf 1.5SMC SERIES_S2207.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC15A V6G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 74A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: SMC
Leakage current: 1µA
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9000+4.41 грн
Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
TS2937CZ33 C0G TS2937_E15.pdf
TS2937CZ33 C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
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SMDJ26A littelfuse-tvs-diode-smdj-datasheet?assetguid=2d9772b3-822b-4362-914d-b74e0a706638
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; 71.3A; unidirectional; DO214AB,SMC; SMDJ
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 71.3A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
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BZD27C16PWH BZD27C11PWH SERIES_B2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123W; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD123W
Kind of package: reel; tape
Semiconductor structure: single diode
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US1M US1A SERIES_N2102.pdf us1a.pdf US1M.pdf 5399_US1M.pdf 5272_US1M.pdf 1655_US1M.pdf 1778294620314235.pdf ds16008.pdf
US1M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
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GBU404 GBU407_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU402 GBU407_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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BZT52C30 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C30 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
SR510 SR502 SERIES_J2105.pdf
SR510
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201AD; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
15+31.91 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
SR510H SR502 SERIES_J2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; DO201AD; 850mV
Type of diode: Schottky rectifying
Mounting: THT
Case: DO201AD
Max. forward voltage: 0.85V
на замовлення 27500 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3750+11.76 грн
Мінімальне замовлення: 3750 шт
В кошику  од. на суму  грн.
TS15P06G TS15P07G_ser.pdf
TS15P06G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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TSM60N900CP ROG
TSM60N900CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM60N900CH C5G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM60N900CI C0G
TSM60N900CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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SMCJ18A SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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P6SMB27A M4G P6SMB_ser.pdf
P6SMB27A M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
1V5KE400CA 1V5KE SERIES_D2112.pdf ONSM-S-A0003585386-1.pdf?t.download=true&u=5oefqw
Виробник: TAIWAN SEMICONDUCTOR
Category: Diodes - Unclassified
Description: 1V5KE400CA
на замовлення 1250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1250+30.17 грн
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
BZT52C5V6 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C5V6 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+9.12 грн
81+5.25 грн
100+4.23 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BZT52C5V6 RH BZT52C5V6-RH.pdf
BZT52C5V6 RH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 680 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.76 грн
55+7.79 грн
100+4.72 грн
500+3.31 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
ES1J ES1J-D.PDF ES1(A-M)%20N0159%20REV.E.pdf ES1A SERIES_O2112.pdf es1a.pdf ES1J.pdf 5399_ES1J%20SMA.PDF GK-SMA_ES1A_THRU_ES1J-202604.pdf 1778296742646711.pdf 8-ES1A-ES1J(SMA).pdf ES1_1.pdf ES1J.pdf
ES1J
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3581 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+26.44 грн
27+15.75 грн
100+9.40 грн
500+7.03 грн
1000+6.26 грн
2000+5.59 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
BZX84C10 RFG BZX84C2V4%20SERIES_F2001.pdf
BZX84C10 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Power dissipation: 0.3W
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 10V
Type of diode: Zener
на замовлення 910 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
70+6.75 грн
115+3.84 грн
500+3.06 грн
Мінімальне замовлення: 70 шт
В кошику  од. на суму  грн.
P4SMA24A P4SMA.pdf
P4SMA24A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12.6A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Breakdown voltage: 22.8V
Max. forward impulse current: 12.6A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
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P4SMA24CA P4SMA.pdf tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 P4SMA SERIES_S2102.pdf SMAP4SMA24CASC.pdf eaton-p4sma-tvs-diode-power-esd-suppressor-data-sheet.pdf
P4SMA24CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12.6A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Breakdown voltage: 22.8V
Max. forward impulse current: 12.6A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
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TS431BCX RFG TS431ACX-RFG.pdf
TS431BCX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
19+24.61 грн
27+15.83 грн
32+13.54 грн
50+11.77 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
SMAJ40A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
SMAJ40A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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MUR360S MUR305S SERIES_J2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MUR360SBH MUR340SBH SERIES_B2211.pdf
MUR360SBH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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MUR360SH MUR305SH SERIES_B2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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TSSW3U60 TSSW3U45 SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Kind of package: reel; tape
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