Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (49822) > Сторінка 831 з 831
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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TSM035NB04CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 157A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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TSM035NB04LCZ C0G | TAIWAN SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 157A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| 1V5KE130A | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS Type of diode: TVS |
на замовлення 3750 шт: термін постачання 14-30 дні (днів) |
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| 1SMA4759 M2G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 62V; SMA Type of diode: Zener Zener voltage: 62V Tolerance: ±5% Case: SMA |
на замовлення 60000 шт: термін постачання 14-30 дні (днів) |
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| TSM280NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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TSD20H120CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 20A Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 120V Load current: 20A Semiconductor structure: common cathode; double Max. forward voltage: 0.87V Max. forward impulse current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| TSM220NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 23nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| DBL206G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 50A Case: DBL Kind of package: tube Max. forward voltage: 1.15V Electrical mounting: THT Version: DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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1SMA4756 R3G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1.25W; 47V; SMD; DO214AC,SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.25W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||
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MBRS2545CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape Mounting: SMD Case: D2PAK Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.82V Load current: 12.5A x2 Max. load current: 25A Max. off-state voltage: 45V Semiconductor structure: common cathode; double |
на замовлення 117 шт: термін постачання 14-30 дні (днів) |
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| TLD5S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 3.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 212A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Application: automotive industry Manufacturer series: TLD5S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| TLD6S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 4.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 271A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Application: automotive industry Manufacturer series: TLD6S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| TLD8S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 388A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Application: automotive industry Manufacturer series: TLD8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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TSM4946DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 30nC Kind of package: tape Kind of channel: enhancement |
на замовлення 2486 шт: термін постачання 14-30 дні (днів) |
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1N4007G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V Case: DO41 Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Capacitance: 10pF Load current: 1A Max. forward voltage: 1V Max. forward impulse current: 30A Max. off-state voltage: 1kV Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 113 шт: термін постачання 14-30 дні (днів) |
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SFAS804GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V Mounting: SMD Case: D2PAK Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 8A Max. off-state voltage: 200V Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SFAS805GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape Mounting: SMD Case: D2PAK Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Max. forward voltage: 1.3V Load current: 8A Max. off-state voltage: 300V Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SFAS806GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape Mounting: SMD Case: D2PAK Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Max. forward voltage: 1.3V Load current: 8A Max. off-state voltage: 0.4kV Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SFAS808GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape Mounting: SMD Case: D2PAK Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Max. forward voltage: 1.7V Load current: 8A Max. off-state voltage: 0.6kV Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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TSM60NB380CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 19.4nC Kind of package: tape Kind of channel: enhancement |
на замовлення 73 шт: термін постачання 14-30 дні (днів) |
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| HERF1005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 10A Reverse recovery time: 50ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SMAJ45CA R3G | TAIWAN SEMICONDUCTOR |
Category: Diodes - Unclassified Description: SMAJ45CA R3G |
на замовлення 32400 шт: термін постачання 14-30 дні (днів) |
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| TSM035NB04CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| TSM035NB04LCZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| 1V5KE130A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 3750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 14.55 грн |
| 1SMA4759 M2G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 62V; SMA
Type of diode: Zener
Zener voltage: 62V
Tolerance: ±5%
Case: SMA
Category: SMD Zener diodes
Description: Diode: Zener; 62V; SMA
Type of diode: Zener
Zener voltage: 62V
Tolerance: ±5%
Case: SMA
на замовлення 60000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30000+ | 1.29 грн |
| TSM280NB06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| TSD20H120CW MNG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 20A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.87V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 20A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.87V
Max. forward impulse current: 100A
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В кошику
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| TSM220NB06CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DBL206G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
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| 1SMA4756 R3G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 47V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 47V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
| MBRS2545CT |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.82V
Load current: 12.5A x2
Max. load current: 25A
Max. off-state voltage: 45V
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.82V
Load current: 12.5A x2
Max. load current: 25A
Max. off-state voltage: 45V
Semiconductor structure: common cathode; double
на замовлення 117 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.86 грн |
| 10+ | 73.79 грн |
| 25+ | 67.99 грн |
| 100+ | 60.53 грн |
| TLD5S10AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD5S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD5S
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| TLD6S10AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD6S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD6S
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| TLD8S10AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD8S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD8S
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| TSM4946DCS RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 2486 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 80.36 грн |
| 10+ | 61.35 грн |
| 1N4007G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Case: DO41
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Capacitance: 10pF
Load current: 1A
Max. forward voltage: 1V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Case: DO41
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Capacitance: 10pF
Load current: 1A
Max. forward voltage: 1V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 113 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 16.97 грн |
| 34+ | 12.27 грн |
| 40+ | 10.45 грн |
| 100+ | 5.87 грн |
| SFAS804GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 8A
Max. off-state voltage: 200V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 8A
Max. off-state voltage: 200V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SFAS805GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 300V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 300V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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В кошику
од. на суму грн.
| SFAS806GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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В кошику
од. на суму грн.
| SFAS808GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.7V
Load current: 8A
Max. off-state voltage: 0.6kV
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.7V
Load current: 8A
Max. off-state voltage: 0.6kV
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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од. на суму грн.
| TSM60NB380CP ROG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19.4nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 141.08 грн |
| 5+ | 118.56 грн |
| 25+ | 104.47 грн |
| HERF1005GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 50ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 50ns
Application: automotive industry
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В кошику
од. на суму грн.
| SMAJ45CA R3G |
на замовлення 32400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19842+ | 1.80 грн |