Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (50131) > Сторінка 831 з 836
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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| SMDJ30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 33.3V; 62A; unidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 62A Manufacturer series: SMDJ Peak pulse power dissipation: 3kW Application: automotive industry Case: DO214AB; SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 5.0SMDJ30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 103A Manufacturer series: 5.0SMDJ Peak pulse power dissipation: 5kW Case: DO214AB; SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 5.0SMDJ30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 103A Manufacturer series: 5.0SMDJ Peak pulse power dissipation: 5kW Application: automotive industry Case: DO214AB; SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MBS10 RCG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A Case: MBS; TO269AA Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 0.8A Max. forward impulse current: 35A Max. forward voltage: 1V Max. off-state voltage: 1kV |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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SMBJ11CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 34A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMSZ5232B RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 5285 шт: термін постачання 14-30 дні (днів) |
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SS16 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.65V Max. forward impulse current: 40A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ES2FAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ES2FH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1SMA4746H | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1.25W; 18V; SMD; DO214AC,SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.25W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMBJ130AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 144÷159V; 3A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 130V Breakdown voltage: 144...159V Max. forward impulse current: 3A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| TSM220NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 23nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TSM2301ACX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Power dissipation: 0.45W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate charge: 7.2nC |
на замовлення 2365 шт: термін постачання 14-30 дні (днів) |
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1.5KE91A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 77.8V Breakdown voltage: 91V Max. forward impulse current: 12A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 5µA Manufacturer series: 1.5KE Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||
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BZT52C16S R9G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 16V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||
| SMCJ30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TS2937CM50 RNG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 5V Output current: 0.5A Case: D2PAK Mounting: SMD Manufacturer series: TS2937 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 6...26V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSS42U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Mounting: SMD Semiconductor structure: single diode Case - inch: 0603 Load current: 0.2A Max. forward impulse current: 0.5A Max. forward voltage: 1V Case - mm: 1608 Max. off-state voltage: 30V Kind of package: reel; tape Type of diode: Schottky switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| TSS43U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case - inch: 0603 Case - mm: 1608 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
| TSS70U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape Mounting: SMD Semiconductor structure: single diode Case - inch: 0603 Load current: 70mA Max. forward impulse current: 0.1A Max. forward voltage: 1V Case - mm: 1608 Max. off-state voltage: 70V Kind of package: reel; tape Type of diode: Schottky switching |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||
| TPMR10DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 10A; 35ns; TO277A; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO277A Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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1SMA4761 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1.25W; 75V; SMD; DO214AC,SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.25W Zener voltage: 75V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||
| SS315 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 150V; 3A; reel,tape Mounting: SMD Max. off-state voltage: 150V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 70A Max. forward voltage: 0.95V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SS315ALH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; thinSMA; SMD; 150V; 3A; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 150V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: thinSMA Type of diode: Schottky rectifying Max. forward voltage: 0.95V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||
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TSM035NB04CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 157A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSM035NB04LCZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 157A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 1V5KE130A | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS Type of diode: TVS |
на замовлення 3750 шт: термін постачання 14-30 дні (днів) |
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| 1SMA4759 M2G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 62V; SMA Type of diode: Zener Zener voltage: 62V Tolerance: ±5% Case: SMA |
на замовлення 60000 шт: термін постачання 14-30 дні (днів) |
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| TSM280NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TSD20H120CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 20A Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 120V Load current: 20A Semiconductor structure: common cathode; double Max. forward voltage: 0.87V Max. forward impulse current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| TSM220NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 23nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DBL206G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; DIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 50A Case: DBL Kind of package: tube Max. forward voltage: 1.15V Electrical mounting: THT Version: DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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1SMA4756 R3G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1.25W; 47V; SMD; DO214AC,SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.25W Zener voltage: 47V Case: DO214AC; SMA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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MBRS2545CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape Mounting: SMD Case: D2PAK Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.82V Load current: 12.5A x2 Max. load current: 25A Max. off-state voltage: 45V Semiconductor structure: common cathode; double |
на замовлення 117 шт: термін постачання 14-30 дні (днів) |
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| TLD5S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 3.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 212A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Application: automotive industry Manufacturer series: TLD5S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TLD6S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 4.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 271A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Application: automotive industry Manufacturer series: TLD6S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TLD8S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 388A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Application: automotive industry Manufacturer series: TLD8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TSM4946DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 30nC Kind of package: tape Kind of channel: enhancement |
на замовлення 2486 шт: термін постачання 14-30 дні (днів) |
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SFAS804GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V Mounting: SMD Case: D2PAK Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 8A Max. off-state voltage: 200V Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAS805GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape Mounting: SMD Case: D2PAK Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Max. forward voltage: 1.3V Load current: 8A Max. off-state voltage: 300V Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAS806GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape Mounting: SMD Case: D2PAK Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Max. forward voltage: 1.3V Load current: 8A Max. off-state voltage: 0.4kV Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAS808GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: D2PAK Max. forward voltage: 1.7V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSM60NB380CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 19.4nC Kind of package: tape Kind of channel: enhancement |
на замовлення 73 шт: термін постачання 14-30 дні (днів) |
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| HERF1005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 10A Reverse recovery time: 50ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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SMAJ45CA R3G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; SMD; Urmax: 45V; bidirectional; DO214AC,SMA; Ifsm: 5.5A Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Operating temperature: -55...150°C Number of channels: 1 |
на замовлення 32400 шт: термін постачання 14-30 дні (днів) |
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| TSSE3H45H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123HE; SMD; 45V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 45V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.57V Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||
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SK520CH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 200V; 5A; reel,tape Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 120A Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 200V Load current: 5A |
на замовлення 87 шт: термін постачання 14-30 дні (днів) |
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1SMA5927 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 12V; SMD; DO214AC,SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1SMA5938 M2G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 36V; SMD; DO214AC,SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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| TS10KL100 D3 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 180A Type of bridge rectifier: single-phase Max. forward impulse current: 180A Max. forward voltage: 1V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 1kV Electrical mounting: THT Load current: 10A Kind of package: tube Case: KBJL |
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В кошику од. на суму грн. | |||||||||||
| SFAF508GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 5A; ITO220AC; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: ITO220AC Reverse recovery time: 35ns Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||
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BZT52C10 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 10V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZT52C2V7 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 2.7V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 959 шт: термін постачання 14-30 дні (днів) |
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TSM120N06LCS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 37nC Kind of package: tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||
| TSM120N06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 14W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 36.5nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
KBL404G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A Case: KBL Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 0.4kV Electrical mounting: THT Load current: 4A Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| KBL402G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: KBL Electrical mounting: THT Leads: round pin Kind of package: in-tray Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TPMR6GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 6A; 60ns; TO277A; Ufmax: 1.8V Mounting: SMD Max. forward voltage: 1.8V Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 0.4kV Load current: 6A Kind of package: reel; tape Semiconductor structure: single diode Case: TO277A Type of diode: rectifying Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TPMR6JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 6A; 60ns; TO277A; Ufmax: 1V; reel,tape Mounting: SMD Max. forward voltage: 1V Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 0.6kV Load current: 6A Kind of package: reel; tape Semiconductor structure: single diode Case: TO277A Type of diode: rectifying Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
RABS20M | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 50A Case: ABS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward voltage: 1.16V |
на замовлення 509 шт: термін постачання 14-30 дні (днів) |
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| SMDJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3V; 62A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 62A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Application: automotive industry
Case: DO214AB; SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3V; 62A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 62A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Application: automotive industry
Case: DO214AB; SMC
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| 5.0SMDJ30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Case: DO214AB; SMC
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| 5.0SMDJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Application: automotive industry
Case: DO214AB; SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Manufacturer series: 5.0SMDJ
Peak pulse power dissipation: 5kW
Application: automotive industry
Case: DO214AB; SMC
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| MBS10 RCG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A
Case: MBS; TO269AA
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.8A
Max. forward impulse current: 35A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A
Case: MBS; TO269AA
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.8A
Max. forward impulse current: 35A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.16 грн |
| SMBJ11CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Leakage current: 1µA
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| MMSZ5232B RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 5285 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 5.29 грн |
| 100+ | 4.47 грн |
| 250+ | 3.94 грн |
| 1000+ | 3.74 грн |
| SS16 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. forward impulse current: 40A
Kind of package: reel; tape
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| ES2FAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| ES2FH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| 1SMA4746H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 18V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 18V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
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| SMBJ130AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 144÷159V; 3A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 144÷159V; 3A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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| TSM220NB06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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| TSM2301ACX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 7.2nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 7.2nC
на замовлення 2365 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.93 грн |
| 18+ | 23.87 грн |
| 100+ | 16.85 грн |
| 500+ | 13.80 грн |
| 1000+ | 12.87 грн |
| 1.5KE91A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 77.8V
Breakdown voltage: 91V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 77.8V
Breakdown voltage: 91V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Tolerance: ±5%
Kind of package: reel; tape
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Мінімальне замовлення: 3 шт
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| BZT52C16S R9G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10 шт
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| SMCJ30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| TS2937CM50 RNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 5V
Output current: 0.5A
Case: D2PAK
Mounting: SMD
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6...26V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 5V
Output current: 0.5A
Case: D2PAK
Mounting: SMD
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6...26V
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| TSS42U RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case - inch: 0603
Load current: 0.2A
Max. forward impulse current: 0.5A
Max. forward voltage: 1V
Case - mm: 1608
Max. off-state voltage: 30V
Kind of package: reel; tape
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case - inch: 0603
Load current: 0.2A
Max. forward impulse current: 0.5A
Max. forward voltage: 1V
Case - mm: 1608
Max. off-state voltage: 30V
Kind of package: reel; tape
Type of diode: Schottky switching
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| TSS43U RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case - inch: 0603
Case - mm: 1608
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case - inch: 0603
Case - mm: 1608
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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Мінімальне замовлення: 4000 шт
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| TSS70U RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case - inch: 0603
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Case - mm: 1608
Max. off-state voltage: 70V
Kind of package: reel; tape
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case - inch: 0603
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Case - mm: 1608
Max. off-state voltage: 70V
Kind of package: reel; tape
Type of diode: Schottky switching
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Мінімальне замовлення: 5 шт
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| TPMR10DH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; 35ns; TO277A; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; 35ns; TO277A; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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| 1SMA4761 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 75V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 75V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
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Мінімальне замовлення: 7500 шт
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| SS315 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 150V; 3A; reel,tape
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 70A
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 150V; 3A; reel,tape
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 70A
Max. forward voltage: 0.95V
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| SS315ALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinSMA; SMD; 150V; 3A; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 150V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: thinSMA
Type of diode: Schottky rectifying
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinSMA; SMD; 150V; 3A; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 150V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: thinSMA
Type of diode: Schottky rectifying
Max. forward voltage: 0.95V
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Мінімальне замовлення: 3 шт
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| TSM035NB04CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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| TSM035NB04LCZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
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| 1V5KE130A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 3750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 14.86 грн |
| 1SMA4759 M2G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 62V; SMA
Type of diode: Zener
Zener voltage: 62V
Tolerance: ±5%
Case: SMA
Category: SMD Zener diodes
Description: Diode: Zener; 62V; SMA
Type of diode: Zener
Zener voltage: 62V
Tolerance: ±5%
Case: SMA
на замовлення 60000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30000+ | 1.31 грн |
| TSM280NB06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: tape
Kind of channel: enhancement
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| TSD20H120CW MNG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 20A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.87V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 20A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.87V
Max. forward impulse current: 100A
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| TSM220NB06CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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| DBL206G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; DIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBL
Kind of package: tube
Max. forward voltage: 1.15V
Electrical mounting: THT
Version: DIP
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| 1SMA4756 R3G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 47V; SMD; DO214AC,SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 47V
Case: DO214AC; SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 47V; SMD; DO214AC,SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 47V
Case: DO214AC; SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.50 грн |
| MBRS2545CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.82V
Load current: 12.5A x2
Max. load current: 25A
Max. off-state voltage: 45V
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.82V
Load current: 12.5A x2
Max. load current: 25A
Max. off-state voltage: 45V
Semiconductor structure: common cathode; double
на замовлення 117 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.81 грн |
| 10+ | 75.34 грн |
| 25+ | 69.41 грн |
| 100+ | 61.80 грн |
| TLD5S10AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD5S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD5S
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| TLD6S10AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD6S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD6S
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| TLD8S10AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD8S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 15µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD8S
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| TSM4946DCS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 2486 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.05 грн |
| 10+ | 62.64 грн |
| SFAS804GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 8A
Max. off-state voltage: 200V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 0.95V
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 8A
Max. off-state voltage: 200V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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| SFAS805GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 300V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 300V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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| SFAS806GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 35ns; D2PAK; Ufmax: 1.3V; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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| SFAS808GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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| TSM60NB380CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19.4nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 144.04 грн |
| 5+ | 121.05 грн |
| 25+ | 106.66 грн |
| HERF1005GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 50ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 50ns
Application: automotive industry
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| SMAJ45CA R3G |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; SMD; Urmax: 45V; bidirectional; DO214AC,SMA; Ifsm: 5.5A
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Operating temperature: -55...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; SMD; Urmax: 45V; bidirectional; DO214AC,SMA; Ifsm: 5.5A
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Operating temperature: -55...150°C
Number of channels: 1
на замовлення 32400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19842+ | 1.86 грн |
| TSSE3H45H |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Kind of package: reel; tape
Application: automotive industry
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| SK520CH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 5A; reel,tape
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 120A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 5A; reel,tape
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 120A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 5A
на замовлення 87 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.87 грн |
| 14+ | 30.47 грн |
| 1SMA5927 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
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| 1SMA5938 M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; DO214AC,SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.52 грн |
| TS10KL100 D3 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. forward impulse current: 180A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 10A
Kind of package: tube
Case: KBJL
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. forward impulse current: 180A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 10A
Kind of package: tube
Case: KBJL
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| SFAF508GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; ITO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; ITO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 35ns
Application: automotive industry
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| BZT52C10 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
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| BZT52C2V7 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 959 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 4.38 грн |
| 145+ | 2.96 грн |
| 250+ | 2.63 грн |
| TSM120N06LCS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: tape
Kind of channel: enhancement
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| TSM120N06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: tape
Kind of channel: enhancement
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| KBL404G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Case: KBL
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 4A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Case: KBL
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 4A
Kind of package: in-tray
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| KBL402G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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| TPMR6GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; 60ns; TO277A; Ufmax: 1.8V
Mounting: SMD
Max. forward voltage: 1.8V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; 60ns; TO277A; Ufmax: 1.8V
Mounting: SMD
Max. forward voltage: 1.8V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
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| TPMR6JH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 60ns; TO277A; Ufmax: 1V; reel,tape
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 60ns; TO277A; Ufmax: 1V; reel,tape
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
Reverse recovery time: 60ns
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| RABS20M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: ABS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.16V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: ABS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.16V
на замовлення 509 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.20 грн |
| 18+ | 24.21 грн |
| 100+ | 14.31 грн |
| 500+ | 9.40 грн |






















