Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (49924) > Сторінка 831 з 833
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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| TSM110NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 23nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ24CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 40A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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LL4006G L0G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; MELF; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Case: MELF Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| SMCJ26CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 37A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ26CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 37A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TQM025NH04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 136W Case: PDFN56U Gate-source voltage: ±16V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 63.3nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TS5205CX5 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.5÷15V; 0.15A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.165V Output voltage: 1.5...15V Output current: 0.15A Case: SOT25 Mounting: SMD Manufacturer series: TS5205 Operating temperature: -40...125°C Tolerance: ±0.2% Number of channels: 1 Input voltage: 2.5...16V |
на замовлення 27 шт: термін постачання 14-30 дні (днів) |
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TS5205CX5 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 2.4÷15V; 0.15A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.275V Output voltage: 2.4...15V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: TS5205 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...16V |
на замовлення 198 шт: термін постачання 14-30 дні (днів) |
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| TSM033NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 21A Power dissipation: 36W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 79nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TS5205CX550 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.275V Output voltage: 5V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: TS5205 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BYG21M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 120ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 13pF Case: SMA Max. forward voltage: 1.6V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 275 шт: термін постачання 14-30 дні (днів) |
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BYG21MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 120ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.6V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PU2BAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 0.93V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.93V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TQL851CSV33 RLG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SO8-EP; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.425V Output voltage: 3.3V Output current: 0.5A Case: SO8-EP Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TQL851CSV50 RLG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SO8-EP; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.425V Output voltage: 5V Output current: 0.5A Case: SO8-EP Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PU2DBH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 0.73V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.73V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ES2AAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape Max. off-state voltage: 50V Load current: 2A Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 35ns Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZT52B15-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.41W; 15V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 573 шт: термін постачання 14-30 дні (днів) |
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SMBJ75CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 83.3V; 5.2A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Number of channels: 1 |
на замовлення 21000 шт: термін постачання 14-30 дні (днів) |
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| 1.5SMC15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Max. forward impulse current: 74A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1.5SMC15A V6G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 74A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12.8V Max. forward impulse current: 74A Semiconductor structure: unidirectional Case: SMC Leakage current: 1µA |
на замовлення 21000 шт: термін постачання 14-30 дні (днів) |
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TS2937CZ33 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 3.3V Output current: 0.5A Case: TO220 Mounting: THT Manufacturer series: TS2937 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.3...26V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMDJ26A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 28.9V; 71.3A; unidirectional; DO214AB,SMC; SMDJ Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 71.3A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Manufacturer series: SMDJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BZD27C16PWH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 16V; SMD; SOD123W; reel,tape; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Case: SOD123W Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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US1M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| GBU404 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 80A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 80A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBU402 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 80A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 4A Max. forward impulse current: 80A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZT52C30 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 30V; SMD; SOD123F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
| SR510 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5A; DO201AD; Ufmax: 850mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.85V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SR510H | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; DO201AD; 850mV Type of diode: Schottky rectifying Mounting: THT Case: DO201AD Max. forward voltage: 0.85V |
на замовлення 27500 шт: термін постачання 14-30 дні (днів) |
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TS15P06G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 15A Max. forward impulse current: 0.24kA Version: flat Case: TS-6P Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSM60N900CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 9.7nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSM60N900CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 50W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM60N900CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMCJ18A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 20÷22.1V; 53A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 53A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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P6SMB27A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P6SMB |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||
| 1V5KE400CA | TAIWAN SEMICONDUCTOR |
Category: Diodes - UnclassifiedDescription: 1V5KE400CA |
на замовлення 1250 шт: термін постачання 14-30 дні (днів) |
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SMAJ30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3V; 8.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZT52C5V6 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 920 шт: термін постачання 14-30 дні (днів) |
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BZT52C5V6 RH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 690 шт: термін постачання 14-30 дні (днів) |
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ES1J | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 3586 шт: термін постачання 14-30 дні (днів) |
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BZX84C10 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 910 шт: термін постачання 14-30 дні (днів) |
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P4SMA24A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.8V; 12.6A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20.5V Breakdown voltage: 22.8V Max. forward impulse current: 12.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P4SMA24CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.8V; 12.6A; bidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20.5V Breakdown voltage: 22.8V Max. forward impulse current: 12.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TS431BCX RFG | TAIWAN SEMICONDUCTOR |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 75 шт: термін постачання 14-30 дні (днів) |
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SMAJ40A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
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| MUR360S | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.25V Kind of package: reel; tape |
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MUR360SBH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
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| MUR360SH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||
| TSSW3U60 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123W Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.58V Kind of package: reel; tape |
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| TSSW3U60H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123W Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.4V Kind of package: reel; tape Application: automotive industry |
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| TSSW3U45 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123W; SMD; 45V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123W Mounting: SMD Max. off-state voltage: 45V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.47V Kind of package: reel; tape |
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| TSSW3U45H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123W; SMD; 45V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123W Mounting: SMD Max. off-state voltage: 45V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.47V Kind of package: reel; tape Application: automotive industry |
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SMBJ16A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 24.2A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
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SMCJ22A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 44A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
на замовлення 234 шт: термін постачання 14-30 дні (днів) |
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P4SMA12A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.4V; 25A; unidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: unidirectional Manufacturer series: P4SMA Max. off-state voltage: 10.2V Breakdown voltage: 11.4V Max. forward impulse current: 25A Peak pulse power dissipation: 0.4kW |
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В кошику од. на суму грн. | ||||||||||||
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P4SMA12CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.4V; 25A; bidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: bidirectional Manufacturer series: P4SMA Max. off-state voltage: 10.2V Breakdown voltage: 11.4V Max. forward impulse current: 25A Peak pulse power dissipation: 0.4kW |
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SMAJ12A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
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В кошику од. на суму грн. | ||||||||||||
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1PGSMB5928 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 13V; SMD; SMB; single diode; reel,tape Type of diode: Zener Power dissipation: 3W Zener voltage: 13V Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 297 шт: термін постачання 14-30 дні (днів) |
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SMBJ60A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 6.5A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
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| TSM110NB04LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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| SMCJ24CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| LL4006G L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
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Мінімальне замовлення: 5000 шт
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| SMCJ26CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ26CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| TQM025NH04LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 136W
Case: PDFN56U
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 136W
Case: PDFN56U
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: tape
Kind of channel: enhancement
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| TS5205CX5 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.165V
Output voltage: 1.5...15V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.165V
Output voltage: 1.5...15V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.20 грн |
| 14+ | 30.61 грн |
| 25+ | 26.97 грн |
| TS5205CX5 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.4÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.275V
Output voltage: 2.4...15V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.4÷15V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.275V
Output voltage: 2.4...15V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.78 грн |
| 13+ | 32.43 грн |
| 25+ | 27.88 грн |
| 100+ | 20.35 грн |
| TSM033NB04LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
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| TS5205CX550 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.275V
Output voltage: 5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5205
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
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| BYG21M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 13pF
Case: SMA
Max. forward voltage: 1.6V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 13pF
Case: SMA
Max. forward voltage: 1.6V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 275 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.84 грн |
| 25+ | 16.96 грн |
| 100+ | 10.42 грн |
| BYG21MH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.6V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.6V
Kind of package: reel; tape
Application: automotive industry
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| PU2BAH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 0.93V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.93V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 25ns; SMA; Ufmax: 0.93V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.93V
Kind of package: reel; tape
Application: automotive industry
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| TQL851CSV33 RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 3.3V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 3.3V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
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| TQL851CSV50 RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...50V
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| PU2DBH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 0.73V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 0.73V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
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| ES2AAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Max. off-state voltage: 50V
Load current: 2A
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Max. off-state voltage: 50V
Load current: 2A
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
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| BZT52B15-G RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 573 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.04 грн |
| 43+ | 9.76 грн |
| 54+ | 7.68 грн |
| 100+ | 5.29 грн |
| 500+ | 4.31 грн |
| SMBJ75CA M4G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3V; 5.2A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3V; 5.2A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12438+ | 2.87 грн |
| 1.5SMC15A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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| 1.5SMC15A V6G |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 74A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: SMC
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 74A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: SMC
Leakage current: 1µA
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9000+ | 4.28 грн |
| TS2937CZ33 C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
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| SMDJ26A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; 71.3A; unidirectional; DO214AB,SMC; SMDJ
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 71.3A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; 71.3A; unidirectional; DO214AB,SMC; SMDJ
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 71.3A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
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| BZD27C16PWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123W; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD123W
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123W; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD123W
Kind of package: reel; tape
Semiconductor structure: single diode
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| US1M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
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| GBU404 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| GBU402 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| BZT52C30 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
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Мінімальне замовлення: 500 шт
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| SR510 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201AD; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201AD; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
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| SR510H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; DO201AD; 850mV
Type of diode: Schottky rectifying
Mounting: THT
Case: DO201AD
Max. forward voltage: 0.85V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; DO201AD; 850mV
Type of diode: Schottky rectifying
Mounting: THT
Case: DO201AD
Max. forward voltage: 0.85V
на замовлення 27500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3750+ | 11.49 грн |
| TS15P06G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| TSM60N900CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
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| TSM60N900CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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| TSM60N900CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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| SMCJ18A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| P6SMB27A M4G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
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Мінімальне замовлення: 3 шт
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| 1V5KE400CA |
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на замовлення 1250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1250+ | 29.49 грн |
| SMAJ30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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| BZT52C5V6 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 920 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.91 грн |
| 81+ | 5.13 грн |
| 142+ | 2.92 грн |
| BZT52C5V6 RH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 690 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.47 грн |
| 55+ | 7.61 грн |
| 100+ | 4.62 грн |
| 500+ | 3.23 грн |
| ES1J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3586 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.84 грн |
| 27+ | 15.39 грн |
| 100+ | 9.18 грн |
| 500+ | 6.87 грн |
| 1000+ | 6.12 грн |
| 2000+ | 5.46 грн |
| BZX84C10 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 910 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.59 грн |
| 115+ | 3.76 грн |
| 500+ | 2.99 грн |
| P4SMA24A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12.6A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12.6A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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| P4SMA24CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12.6A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12.6A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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| TS431BCX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.05 грн |
| 27+ | 15.47 грн |
| 32+ | 13.24 грн |
| 50+ | 11.50 грн |
| SMAJ40A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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| MUR360S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
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| MUR360SBH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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| MUR360SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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| TSSW3U60 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Kind of package: reel; tape
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| TSSW3U60H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Kind of package: reel; tape
Application: automotive industry
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| TSSW3U45 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Kind of package: reel; tape
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| TSSW3U45H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Kind of package: reel; tape
Application: automotive industry
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| SMBJ16A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ22A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 44A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 44A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 234 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.73 грн |
| 21+ | 20.35 грн |
| 100+ | 16.21 грн |
| P4SMA12A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.4V; 25A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4V
Max. forward impulse current: 25A
Peak pulse power dissipation: 0.4kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.4V; 25A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4V
Max. forward impulse current: 25A
Peak pulse power dissipation: 0.4kW
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| P4SMA12CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.4V; 25A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4V
Max. forward impulse current: 25A
Peak pulse power dissipation: 0.4kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.4V; 25A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4V
Max. forward impulse current: 25A
Peak pulse power dissipation: 0.4kW
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| SMAJ12A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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| 1PGSMB5928 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 297 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.62 грн |
| 23+ | 18.53 грн |
| 30+ | 13.90 грн |
| 100+ | 12.33 грн |
| SMBJ60A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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