| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BZX85C15-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 15V; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 15V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| B340A-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 40V; 3A Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.5mA Max. forward voltage: 0.55V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 65A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N4742A-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; 14 inch reel; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Kind of package: 14 inch reel Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS16HE3_B/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 60V; 1A; automotive industry Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Leakage current: 0.2mA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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CRCW040249R9FKED | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; CRCW0402; 50V Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 49.9Ω Power: 62.5mW Tolerance: ±1% Manufacturer series: CRCW0402 Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Operating voltage: 50V |
на замовлення 8061 шт: термін постачання 14-30 дні (днів) |
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| BAT54WS-E3-18 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; 150mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Power dissipation: 0.15W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BAT54WS-G3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 2µA Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RCA120647K0JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 1206; 47kΩ; 250mW; ±5%; 200V; -55÷155°C Resistance: 47kΩ Tolerance: ±5% Power: 0.25W Operating voltage: 200V Temperature coefficient: 100ppm/°C Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Type of resistor: thick film |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4148W-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; Ufmax: 1.2V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Power dissipation: 0.35W Leakage current: 0.1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMBJ5.0A-M3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Kind of package: 7 inch reel; tape Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMBJ5.0A-M3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Kind of package: 13 inch reel; tape Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMBJ5.0AHE3_A/I | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Kind of package: 13 inch reel; tape Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RCA060318K7FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 18.7kΩ Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Case - inch: 0603 Temperature coefficient: 100ppm/°C Operating voltage: 75V Case - mm: 1608 Conform to the norm: AEC-Q200 |
на замовлення 3290 шт: термін постачання 14-30 дні (днів) |
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RCA060318K7FKEC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 18.7kΩ Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Case - inch: 0603 Temperature coefficient: 100ppm/°C Operating voltage: 75V Case - mm: 1608 Conform to the norm: AEC-Q200 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMBJ33AHE3_B/H | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMBJ30A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 13 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAS70-06-HE3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 1V Leakage current: 0.1µA Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.2W Quantity in set/package: 3000pcs. Application: automotive industry Features of semiconductor devices: small signal Capacitance: 2pF Max. forward impulse current: 0.2A |
на замовлення 2210 шт: термін постачання 14-30 дні (днів) |
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| SIHH250N60EF-T1GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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CRCW251210R0JNEGHP | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 2512; 10Ω; 1.5W; ±5%; 500V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 10Ω Power: 1.5W Tolerance: ±5% Operating voltage: 500V Operating temperature: -55...155°C Quantity in set/package: 4000pcs. Conform to the norm: AEC-Q200 Body dimensions: 6.3x3.15x0.6mm Roll diameter max.: 180mm Temperature coefficient: 200ppm/°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CHP2512K10R0FNT | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 2512; 10Ω; 2W; ±1%; 6.3x3.3x0.5mm Type of resistor: thick film Mounting: SMD Case - inch: 2512 Resistance: 10Ω Power: 2W Tolerance: ±1% Operating temperature: -55...155°C Body dimensions: 6.3x3.3x0.5mm Temperature coefficient: 100ppm/°C Max. operating voltage: 0.25kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SD103AWS-HE3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD Mounting: SMD Semiconductor structure: single diode Type of diode: Schottky switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SD103AW-G3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD; 40V; 10ns Mounting: SMD Reverse recovery time: 10ns Leakage current: 5µA Max. load current: 0.35A Max. forward voltage: 0.6V Max. off-state voltage: 40V Semiconductor structure: single diode Type of diode: Schottky switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SD103AWS-G3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD; 40V; 0.35A; 10ns Mounting: SMD Reverse recovery time: 10ns Leakage current: 5µA Load current: 0.35A Max. forward voltage: 0.6V Max. off-state voltage: 40V Semiconductor structure: single diode Type of diode: Schottky switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263 Type of transistor: N-MOSFET Drain-source voltage: 500V Drain current: 19A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: 30V Mounting: SMD Gate charge: 92nC |
на замовлення 800 шт: термін постачання 14-30 дні (днів) |
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1.5KE22A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Kind of package: 13 inch reel Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 49A Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201 Features of semiconductor devices: glass passivated Technology: TransZorb® Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMBJ5.0AHE3_B/H | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
на замовлення 4500 шт: термін постачання 14-30 дні (днів) |
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MMA02040D3003DB300 | VISHAY |
Category: SMD resistorsDescription: Resistor: metal film; SMD; 300kΩ; 400mW; ±0.5%; 200V; Ø1.4x3.6mm Type of resistor: metal film Mounting: SMD Resistance: 300kΩ Power: 0.4W Tolerance: ±0.5% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C Quantity in set/package: 3000pcs. Body dimensions: Ø1.4x3.6mm Roll diameter max.: 180mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRCW0603220RFKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 220Ω; 0.1W; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 220Ω Power: 0.1W Tolerance: ±1% Operating voltage: 75V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 2264 шт: термін постачання 14-30 дні (днів) |
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CRCW080549R9FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; CRCW0805; 150V Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 49.9Ω Power: 0.125W Tolerance: ±1% Manufacturer series: CRCW0805 Operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 37400 шт: термін постачання 14-30 дні (днів) |
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| 1N4001-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying Type of diode: rectifying |
на замовлення 25400 шт: термін постачання 14-30 дні (днів) |
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| SMAJ5.0CAHE3_A/I | VISHAY |
Category: Diodes - UnclassifiedDescription: SMAJ5.0CAHE3_A/I |
на замовлення 105000 шт: термін постачання 14-30 дні (днів) |
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| BAV21-TR | VISHAY |
Category: THT universal diodesDescription: Diode: switching Type of diode: switching |
на замовлення 30000 шт: термін постачання 14-30 дні (днів) |
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CRCW0603470RFKEC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 470Ω; 125mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 470Ω Power: 0.125W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Roll diameter max.: 330mm Quantity in set/package: 20000pcs. Conform to the norm: AEC-Q200 Mounting: SMD Operating temperature: -55...155°C Body dimensions: 1.65x0.95x0.5mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TZMC15-GS08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 15V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs. Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: MiniMELF; SOD80 Semiconductor structure: single diode Quantity in set/package: 2500pcs. |
на замовлення 25706 шт: термін постачання 14-30 дні (днів) |
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| ES1D-M3/61T | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ES1D-M3/5AT | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ES1DHE3_A/H | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 15ns; Ufmax: 920mV; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 15ns Semiconductor structure: single diode Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMCJ24A-E3/57T | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 359 шт: термін постачання 14-30 дні (днів) |
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| SMCJ24A-E3/9AT | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMCJ24AHE3_A/H | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GSC00AP4721EARL | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 4.7mF; 25VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 4.7mF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...105°C Nominal life: 2000h Height: 21.5mm Manufacturer series: GSC Dimensions: 18x21.5mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MAL203856472E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 4.7mF; 25VDC; Ø16x31mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 25V DC Body dimensions: Ø16x31mm Terminal pitch: 7.5mm Tolerance: ±20% Operating temperature: -40...85°C Height: 31mm Diameter: 16mm Service life: 3500h |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SIHP18N50C-E3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| SD103BW-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD; 30V; 0.35A; 10ns Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.35A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 2A Leakage current: 5µA Reverse recovery time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB35N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 132nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB35N60EF-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 134nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF35N60EF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 134nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG35N60EF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 134nC |
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| SIHP35N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 132nC |
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| SIHP35N60EF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 134nC |
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|
GBU8M-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| BZX55C4V7-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 4.7V; 14 inch reel; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: 14 inch reel Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Quantity in set/package: 10000pcs. |
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|
CRCW251239K0JNEG | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 2512; 39kΩ; 1W; ±5%; 500V; 6.3x3.15x0.6mm Type of resistor: thick film Mounting: SMD Resistance: 39kΩ Power: 1W Tolerance: ±5% Operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Conform to the norm: AEC-Q200 Quantity in set/package: 4000pcs. Case - mm: 6332 Body dimensions: 6.3x3.15x0.6mm Roll diameter max.: 180mm Case - inch: 2512 |
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| CMB02070X3902FB200 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±1%; 500V; L: 5.8mm Type of resistor: carbon film Mounting: SMD Case: 0207 MELF Resistance: 39kΩ Power: 1W Tolerance: ±1% Operating voltage: 500V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...125°C Conform to the norm: AEC-Q200 Length: 5.8mm Diameter: 2.2mm Roll diameter max.: 180mm |
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| CMB02070X3902FB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±1%; 500V; L: 5.8mm Type of resistor: carbon film Mounting: SMD Case: 0207 MELF Resistance: 39kΩ Power: 1W Tolerance: ±1% Operating voltage: 500V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...125°C Conform to the norm: AEC-Q200 Length: 5.8mm Diameter: 2.2mm Roll diameter max.: 330mm |
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| CMB02070X3902GB200 | VISHAY |
Category: SMD resistorsDescription: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±2%; 500V; L: 5.8mm Type of resistor: carbon film Mounting: SMD Case: 0207 MELF Resistance: 39kΩ Power: 1W Tolerance: ±2% Operating voltage: 500V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...125°C Conform to the norm: AEC-Q200 Length: 5.8mm Diameter: 2.2mm Roll diameter max.: 180mm |
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| CMB02070X3902GB700 | VISHAY |
Category: SMD resistorsDescription: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±2%; 500V; L: 5.8mm Type of resistor: carbon film Mounting: SMD Case: 0207 MELF Resistance: 39kΩ Power: 1W Tolerance: ±2% Operating voltage: 500V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...125°C Conform to the norm: AEC-Q200 Length: 5.8mm Diameter: 2.2mm Roll diameter max.: 330mm |
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|
CRCW251239K0FKEG | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 2512; 39kΩ; 1W; ±1%; 500V; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 39kΩ Power: 1W Tolerance: ±1% Operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Case - mm: 6332 Case - inch: 2512 |
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|
CRCW120639K0JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 39kΩ; 0.25W; ±5%; 200V; -55÷155°C Mounting: SMD Type of resistor: thick film Operating temperature: -55...155°C Power: 0.25W Tolerance: ±5% Resistance: 39kΩ Operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 1100 шт: термін постачання 14-30 дні (днів) |
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|
DG201HSDY-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: analog switch; SPST-NC; Ch: 4; SO16; 4.5÷22V,4.5÷25V; reel,tape Type of integrated circuit: analog switch Output configuration: SPST-NC Number of channels: 4 Case: SO16 Supply voltage: 4.5...22V; 4.5...25V Mounting: SMD Kind of package: reel; tape Resistance: 25Ω |
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| BZX85C15-TR |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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| B340A-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.5mA
Max. forward voltage: 0.55V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 65A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.5mA
Max. forward voltage: 0.55V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 65A
Semiconductor structure: single diode
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| 1N4742A-TR |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; 14 inch reel; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Kind of package: 14 inch reel
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; 14 inch reel; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Kind of package: 14 inch reel
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| SS16HE3_B/I |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Application: automotive industry
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| CRCW040249R9FKED |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; CRCW0402; 50V
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 49.9Ω
Power: 62.5mW
Tolerance: ±1%
Manufacturer series: CRCW0402
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; CRCW0402; 50V
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 49.9Ω
Power: 62.5mW
Tolerance: ±1%
Manufacturer series: CRCW0402
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
на замовлення 8061 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 66+ | 6.90 грн |
| BAT54WS-E3-18 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.15W
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| BAT54WS-G3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Reverse recovery time: 5ns
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| RCA120647K0JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 47kΩ; 250mW; ±5%; 200V; -55÷155°C
Resistance: 47kΩ
Tolerance: ±5%
Power: 0.25W
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 1206; 47kΩ; 250mW; ±5%; 200V; -55÷155°C
Resistance: 47kΩ
Tolerance: ±5%
Power: 0.25W
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
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| 1N4148W-G3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; Ufmax: 1.2V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Power dissipation: 0.35W
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; Ufmax: 1.2V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Power dissipation: 0.35W
Leakage current: 0.1mA
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| SMBJ5.0A-M3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| SMBJ5.0A-M3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| SMBJ5.0AHE3_A/I |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
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| RCA060318K7FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 18.7kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 18.7kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
на замовлення 3290 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 310+ | 1.50 грн |
| 400+ | 1.08 грн |
| 440+ | 0.96 грн |
| 570+ | 0.75 грн |
| 1000+ | 0.68 грн |
| RCA060318K7FKEC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 18.7kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 18.7kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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| SMBJ33AHE3_B/H |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
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| SMBJ30A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| BAS70-06-HE3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Application: automotive industry
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Application: automotive industry
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 0.2A
на замовлення 2210 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 55+ | 8.64 грн |
| 100+ | 4.76 грн |
| 500+ | 4.20 грн |
| SIHH250N60EF-T1GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 220.22 грн |
| CRCW251210R0JNEGHP |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 10Ω; 1.5W; ±5%; 500V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 10Ω
Power: 1.5W
Tolerance: ±5%
Operating voltage: 500V
Operating temperature: -55...155°C
Quantity in set/package: 4000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 6.3x3.15x0.6mm
Roll diameter max.: 180mm
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 10Ω; 1.5W; ±5%; 500V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 10Ω
Power: 1.5W
Tolerance: ±5%
Operating voltage: 500V
Operating temperature: -55...155°C
Quantity in set/package: 4000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 6.3x3.15x0.6mm
Roll diameter max.: 180mm
Temperature coefficient: 200ppm/°C
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| CHP2512K10R0FNT |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 10Ω; 2W; ±1%; 6.3x3.3x0.5mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Resistance: 10Ω
Power: 2W
Tolerance: ±1%
Operating temperature: -55...155°C
Body dimensions: 6.3x3.3x0.5mm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 0.25kV
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 10Ω; 2W; ±1%; 6.3x3.3x0.5mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Resistance: 10Ω
Power: 2W
Tolerance: ±1%
Operating temperature: -55...155°C
Body dimensions: 6.3x3.3x0.5mm
Temperature coefficient: 100ppm/°C
Max. operating voltage: 0.25kV
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| SD103AWS-HE3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky switching
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| SD103AW-G3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 10ns
Mounting: SMD
Reverse recovery time: 10ns
Leakage current: 5µA
Max. load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 10ns
Mounting: SMD
Reverse recovery time: 10ns
Leakage current: 5µA
Max. load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Semiconductor structure: single diode
Type of diode: Schottky switching
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| SD103AWS-G3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.35A; 10ns
Mounting: SMD
Reverse recovery time: 10ns
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.35A; 10ns
Mounting: SMD
Reverse recovery time: 10ns
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Semiconductor structure: single diode
Type of diode: Schottky switching
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| SIHB20N50E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: 30V
Mounting: SMD
Gate charge: 92nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: 30V
Mounting: SMD
Gate charge: 92nC
на замовлення 800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 156.52 грн |
| 1.5KE22A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
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| SMBJ5.0AHE3_B/H |
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на замовлення 4500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 9.28 грн |
| MMA02040D3003DB300 |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal film; SMD; 300kΩ; 400mW; ±0.5%; 200V; Ø1.4x3.6mm
Type of resistor: metal film
Mounting: SMD
Resistance: 300kΩ
Power: 0.4W
Tolerance: ±0.5%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Quantity in set/package: 3000pcs.
Body dimensions: Ø1.4x3.6mm
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: metal film; SMD; 300kΩ; 400mW; ±0.5%; 200V; Ø1.4x3.6mm
Type of resistor: metal film
Mounting: SMD
Resistance: 300kΩ
Power: 0.4W
Tolerance: ±0.5%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Quantity in set/package: 3000pcs.
Body dimensions: Ø1.4x3.6mm
Roll diameter max.: 180mm
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| CRCW0603220RFKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 220Ω; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 220Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 220Ω; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 220Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 2264 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.78 грн |
| 340+ | 1.24 грн |
| 451+ | 0.94 грн |
| 510+ | 0.83 грн |
| 691+ | 0.61 грн |
| 1000+ | 0.53 грн |
| CRCW080549R9FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Manufacturer series: CRCW0805
Operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Manufacturer series: CRCW0805
Operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 37400 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.28 грн |
| 500+ | 1.12 грн |
| 1000+ | 0.69 грн |
| 5000+ | 0.24 грн |
| 1N4001-E3/73 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 25400 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17000+ | 2.22 грн |
| SMAJ5.0CAHE3_A/I |
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на замовлення 105000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7500+ | 9.01 грн |
| BAV21-TR |
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на замовлення 30000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30000+ | 1.81 грн |
| CRCW0603470RFKEC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Roll diameter max.: 330mm
Quantity in set/package: 20000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1.65x0.95x0.5mm
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Roll diameter max.: 330mm
Quantity in set/package: 20000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1.65x0.95x0.5mm
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| TZMC15-GS08 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs.
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Quantity in set/package: 2500pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs.
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Quantity in set/package: 2500pcs.
на замовлення 25706 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.37 грн |
| 105+ | 4.06 грн |
| 180+ | 2.35 грн |
| 500+ | 1.65 грн |
| 1000+ | 1.46 грн |
| 2500+ | 1.27 грн |
| 5000+ | 1.17 грн |
| 7500+ | 1.12 грн |
| 12500+ | 1.06 грн |
| ES1D-M3/61T |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
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| ES1D-M3/5AT |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
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| ES1DHE3_A/H |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 15ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 15ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Application: automotive industry
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| SMCJ24A-E3/57T |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 359 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.22 грн |
| 18+ | 23.83 грн |
| 100+ | 15.97 грн |
| SMCJ24A-E3/9AT |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| SMCJ24AHE3_A/H |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
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| GSC00AP4721EARL |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 4.7mF; 25VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Nominal life: 2000h
Height: 21.5mm
Manufacturer series: GSC
Dimensions: 18x21.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 4.7mF; 25VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Nominal life: 2000h
Height: 21.5mm
Manufacturer series: GSC
Dimensions: 18x21.5mm
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| MAL203856472E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7mF; 25VDC; Ø16x31mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Body dimensions: Ø16x31mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Operating temperature: -40...85°C
Height: 31mm
Diameter: 16mm
Service life: 3500h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7mF; 25VDC; Ø16x31mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Body dimensions: Ø16x31mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Operating temperature: -40...85°C
Height: 31mm
Diameter: 16mm
Service life: 3500h
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| SIHP18N50C-E3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 131.04 грн |
| SD103BW-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.35A; 10ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Leakage current: 5µA
Reverse recovery time: 10ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.35A; 10ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Leakage current: 5µA
Reverse recovery time: 10ns
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| SIHB35N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 132nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 132nC
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| SIHB35N60EF-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
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| SIHF35N60EF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
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| SIHG35N60EF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
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| SIHP35N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 132nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 132nC
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| SIHP35N60EF-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
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| GBU8M-M3/45 |
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Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| BZX55C4V7-TR |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 14 inch reel; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: 14 inch reel
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Quantity in set/package: 10000pcs.
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 14 inch reel; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: 14 inch reel
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Quantity in set/package: 10000pcs.
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| CRCW251239K0JNEG |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 39kΩ; 1W; ±5%; 500V; 6.3x3.15x0.6mm
Type of resistor: thick film
Mounting: SMD
Resistance: 39kΩ
Power: 1W
Tolerance: ±5%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC-Q200
Quantity in set/package: 4000pcs.
Case - mm: 6332
Body dimensions: 6.3x3.15x0.6mm
Roll diameter max.: 180mm
Case - inch: 2512
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 39kΩ; 1W; ±5%; 500V; 6.3x3.15x0.6mm
Type of resistor: thick film
Mounting: SMD
Resistance: 39kΩ
Power: 1W
Tolerance: ±5%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC-Q200
Quantity in set/package: 4000pcs.
Case - mm: 6332
Body dimensions: 6.3x3.15x0.6mm
Roll diameter max.: 180mm
Case - inch: 2512
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| CMB02070X3902FB200 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Mounting: SMD
Case: 0207 MELF
Resistance: 39kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Mounting: SMD
Case: 0207 MELF
Resistance: 39kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 180mm
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| CMB02070X3902FB700 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Mounting: SMD
Case: 0207 MELF
Resistance: 39kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Mounting: SMD
Case: 0207 MELF
Resistance: 39kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 330mm
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| CMB02070X3902GB200 |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±2%; 500V; L: 5.8mm
Type of resistor: carbon film
Mounting: SMD
Case: 0207 MELF
Resistance: 39kΩ
Power: 1W
Tolerance: ±2%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±2%; 500V; L: 5.8mm
Type of resistor: carbon film
Mounting: SMD
Case: 0207 MELF
Resistance: 39kΩ
Power: 1W
Tolerance: ±2%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 180mm
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| CMB02070X3902GB700 |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±2%; 500V; L: 5.8mm
Type of resistor: carbon film
Mounting: SMD
Case: 0207 MELF
Resistance: 39kΩ
Power: 1W
Tolerance: ±2%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 39kΩ; 1W; ±2%; 500V; L: 5.8mm
Type of resistor: carbon film
Mounting: SMD
Case: 0207 MELF
Resistance: 39kΩ
Power: 1W
Tolerance: ±2%
Operating voltage: 500V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...125°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Roll diameter max.: 330mm
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| CRCW251239K0FKEG |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 39kΩ; 1W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 39kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Case - mm: 6332
Case - inch: 2512
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 39kΩ; 1W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 39kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Case - mm: 6332
Case - inch: 2512
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| CRCW120639K0JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 39kΩ; 0.25W; ±5%; 200V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.25W
Tolerance: ±5%
Resistance: 39kΩ
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 39kΩ; 0.25W; ±5%; 200V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.25W
Tolerance: ±5%
Resistance: 39kΩ
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 1100 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.54 грн |
| 600+ | 0.83 грн |
| 1000+ | 0.53 грн |
| DG201HSDY-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 4; SO16; 4.5÷22V,4.5÷25V; reel,tape
Type of integrated circuit: analog switch
Output configuration: SPST-NC
Number of channels: 4
Case: SO16
Supply voltage: 4.5...22V; 4.5...25V
Mounting: SMD
Kind of package: reel; tape
Resistance: 25Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 4; SO16; 4.5÷22V,4.5÷25V; reel,tape
Type of integrated circuit: analog switch
Output configuration: SPST-NC
Number of channels: 4
Case: SO16
Supply voltage: 4.5...22V; 4.5...25V
Mounting: SMD
Kind of package: reel; tape
Resistance: 25Ω
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