| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TS53YL501MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 500Ω; 250mW; SMD; ±20%; 200V Type of potentiometer: mounting Kind of potentiometer: single turn Resistance: 500Ω Power: 0.25W Mounting: SMD Tolerance: ±20% Temperature coefficient: 100ppm/°C Characteristics: linear Body dimensions: 5x5x2.7mm Track material: cermet Mechanical rotation angle: 270 ±10° Electrical rotation angle: 220 ±15° Torque: 1.5Ncm IP rating: IP67 Leads: YL Operating temperature: -55...155°C Operating voltage: 200V |
на замовлення 583 шт: термін постачання 21-30 дні (днів) |
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TS53YL503MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 50kΩ; 250mW; SMD; ±20%; 200V Resistance: 50kΩ Mounting: SMD Operating temperature: -55...155°C Tolerance: ±20% IP rating: IP67 Characteristics: linear Kind of potentiometer: single turn Body dimensions: 5x5x2.7mm Power: 0.25W Torque: 1.5Ncm Temperature coefficient: 100ppm/°C Operating voltage: 200V Electrical rotation angle: 220 ±15° Mechanical rotation angle: 270 ±10° Track material: cermet Type of potentiometer: mounting |
на замовлення 383 шт: термін постачання 21-30 дні (днів) |
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TS53YL502MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 5kΩ; 250mW; SMD; ±20%; linear Type of potentiometer: mounting Kind of potentiometer: single turn Resistance: 5kΩ Power: 0.25W Mounting: SMD Tolerance: ±20% Temperature coefficient: 100ppm/°C Characteristics: linear Body dimensions: 5x5x2.7mm Track material: cermet Mechanical rotation angle: 270 ±10° Electrical rotation angle: 220 ±15° Torque: 1.5Ncm IP rating: IP67 Leads: YL Operating temperature: -55...155°C Operating voltage: 200V |
на замовлення 2628 шт: термін постачання 21-30 дні (днів) |
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249FGJS0XB25103KA | VISHAY |
Category: Cermet single turn potentiometersDescription: Potentiometer: shaft; 10kΩ; 1W; ±10%; 6.35mm; THT; Shaft: smooth; 249 Resistance: 10kΩ Mounting: THT Operating temperature: -55...125°C Tolerance: ±10% Shaft surface: smooth Power: 1W Shaft diameter: 6.35mm Linearity tolerance: ±10% Max. operating voltage: 300V AC Temperature coefficient: 100ppm/°C Electrical rotation angle: 265° Manufacturer series: 249 Track material: cermet Type of potentiometer: shaft |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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293D336X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 10V DC Mounting: SMD Case: B Case - inch: 1411 Case - mm: 3528 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAW56-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
на замовлення 13820 шт: термін постачання 21-30 дні (днів) |
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BAW56-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRCW040210K0FKTDBC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; 50V; -55÷155°C Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 10kΩ Power: 62.5mW Tolerance: ±1% Operating voltage: 50V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Mounting: SMD |
на замовлення 434700 шт: термін постачання 21-30 дні (днів) |
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IRLR120TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1134 шт: термін постачання 21-30 дні (днів) |
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MAL219826681E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20% Mounting: SNAP-IN Operating temperature: -40...85°C Capacitance: 680µF Height: 60mm Diameter: 35mm Terminal pitch: 10mm Body dimensions: Ø35x60mm Tolerance: ±20% Operating voltage: 400V DC Service life: 15000h Type of capacitor: electrolytic |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| SIHA180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 44A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB180N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHD180N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 40A Power dissipation: 156W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG080N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 96A Power dissipation: 227W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHH080N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 96A Power dissipation: 184W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHH180N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 114W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MAL219866151E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 150µF Operating voltage: 400V DC Body dimensions: Ø22x40mm Tolerance: ±20% Service life: 15000h Operating temperature: -40...85°C Height: 40mm Diameter: 22mm Terminal pitch: 10mm |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: 7 inch reel; tape Technology: TransZorb® Leakage current: 0.8mA Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Tolerance: ±5% |
на замовлення 14914 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Kind of package: 13 inch reel; tape Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0D-M3/H | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.5V Max. forward impulse current: 65.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 511 шт: термін постачання 21-30 дні (днів) |
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BFC233840105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 1µF Terminal pitch: 22.5mm Tolerance: ±20% Mounting: THT Body dimensions: 26x12x22mm Operating voltage: 300V AC; 630V DC |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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BFC233910105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 1µF Terminal pitch: 22.5mm Tolerance: ±10% Mounting: THT Body dimensions: 26x12x22mm Operating voltage: 310V AC; 630V DC |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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BFC233921105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 1µF Terminal pitch: 27.5mm Tolerance: ±20% Mounting: THT Body dimensions: 31x11x21mm Operating voltage: 310V AC; 630V DC |
на замовлення 214 шт: термін постачання 21-30 дні (днів) |
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BFC233926105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 1µF Terminal pitch: 22.5mm Tolerance: ±20% Mounting: THT Body dimensions: 26x10x19.5mm Operating voltage: 310V AC; 630V DC |
на замовлення 348 шт: термін постачання 21-30 дні (днів) |
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SFH6206-3X001T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 3µs Turn-off time: 2.3µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT85S-TAP | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 5A Kind of package: Ammo Pack |
на замовлення 8247 шт: термін постачання 21-30 дні (днів) |
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BAT85S-TR | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V Type of diode: Schottky switching Case: DO35 Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 5A Kind of package: 14 inch reel Features of semiconductor devices: small signal |
на замовлення 2851 шт: термін постачання 21-30 дні (днів) |
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MAL213651222E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Diameter: 18mm Body dimensions: Ø18x35mm Height: 35mm Terminal pitch: 7.5mm |
на замовлення 278 шт: термін постачання 21-30 дні (днів) |
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ZRC00KL2221H00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 18x35.5mm |
на замовлення 160 шт: термін постачання 21-30 дні (днів) |
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| SIHB12N65E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF12N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP12N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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293D226X9010A2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 1206 Case - mm: 3216 Case: A Manufacturer series: Tantamount |
на замовлення 7881 шт: термін постачання 21-30 дні (днів) |
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293D226X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 1411 Case - mm: 3528 Case: B Manufacturer series: Tantamount |
на замовлення 4748 шт: термін постачання 21-30 дні (днів) |
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IRF9520PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of channel: enhancement Gate charge: 18nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF9520SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhancement Gate charge: 18nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF9520STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhancement Gate charge: 18nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTCLE100E3474JB0 | VISHAY |
Category: THT measurement NTC thermistorsDescription: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW Resistance: 470kΩ Operating temperature: -40...125°C Power: 0.5W Mounting: THT Material constant B: 4570K Type of sensor: NTC thermistor |
на замовлення 1198 шт: термін постачання 21-30 дні (днів) |
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CNY70 | VISHAY |
Category: PCB Photoelectric SensorsDescription: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective Type of sensor: optocoupler Kind of optocoupler: reflective Kind of output: transistor Collector-emitter voltage: 32V |
на замовлення 3042 шт: термін постачання 21-30 дні (днів) |
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1.5KE36A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 863 шт: термін постачання 21-30 дні (днів) |
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1.5KE36CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 707 шт: термін постачання 21-30 дні (днів) |
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IRLZ44PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Mounting: THT Kind of channel: enhancement Gate-source voltage: ±10V Kind of package: tube Gate charge: 66nC On-state resistance: 28mΩ |
на замовлення 369 шт: термін постачання 21-30 дні (днів) |
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CRCW08054R70FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 4.7Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
на замовлення 14162 шт: термін постачання 21-30 дні (днів) |
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CRCW08054R70FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805; 150V Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 4.7Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Manufacturer series: CRCW0805 Mounting: SMD |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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CRCW12064R70FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; 200V; -55÷125°C Power: 0.25W Mounting: SMD Operating temperature: -55...125°C Tolerance: ±1% Operating voltage: 200V Case - mm: 3216 Type of resistor: thick film Resistance: 4.7Ω Case - inch: 1206 |
на замовлення 7969 шт: термін постачання 21-30 дні (днів) |
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P16NP105MAB15 | VISHAY |
Category: Cermet single turn potentiometersDescription: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered Resistance: 1MΩ Power: 1W Tolerance: ±20% Temperature coefficient: 150ppm/°C IP rating: IP67 Characteristics: linear Type of potentiometer: shaft Mounting: soldered Operating temperature: -40...85°C Panel cutout diameter: 10mm Knob dimensions: Ø16x8mm Electrical rotation angle: 270° Leads: solder lugs Track material: cermet Potentiometer features: for industrial use; with knob Kind of potentiometer: single turn |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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SI2302CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 505 шт: термін постачання 21-30 дні (днів) |
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SI2302DDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2374 шт: термін постачання 21-30 дні (днів) |
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| SIHB8N50D-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF8N50D-E3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP8N50D-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BFC236855474 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT Mounting: THT Type of capacitor: polyester Operating temperature: -55...85°C Capacitance: 0.47µF Lead length: 0.8mm Terminal pitch: 22.5mm Body dimensions: 8x20x26mm Tolerance: ±10% Operating voltage: 220V AC; 400V DC |
на замовлення 367 шт: термін постачання 21-30 дні (днів) |
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DG408DJ-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube Type of integrated circuit: multiplexer Number of channels: 1 Case: DIP16 Supply voltage: 5...20V; 5...36V Mounting: THT Kind of package: tube Resistance: 100Ω Output configuration: 8:1 |
на замовлення 140 шт: термін постачання 21-30 дні (днів) |
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DG408DQ-T1-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape Type of integrated circuit: multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: reel; tape Resistance: 100Ω Output configuration: 8:1 Application: automotive industry |
на замовлення 2914 шт: термін постачання 21-30 дні (днів) |
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DG408DY-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; tube Type of integrated circuit: multiplexer Number of channels: 1 Case: SO16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: tube Resistance: 100Ω Output configuration: 8:1 |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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DG408DY-T1-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; reel,tape Type of integrated circuit: multiplexer Number of channels: 1 Case: SO16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: reel; tape Resistance: 100Ω Output configuration: 8:1 |
на замовлення 1739 шт: термін постачання 21-30 дні (днів) |
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BAT46-TAP | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky switching; THT; 100V; 0.15A; DO35; Ufmax: 1V; 150mW Type of diode: Schottky switching Case: DO35 Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.75A Kind of package: 14 inch reel Features of semiconductor devices: small signal Capacitance: 10pF Leakage current: 20µA Power dissipation: 0.15W |
на замовлення 3431 шт: термін постачання 21-30 дні (днів) |
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BAT46W-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 100V; 0.1A; 7 inch reel Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 100V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 0.25V Max. load current: 0.35A Max. forward impulse current: 0.75A Kind of package: 7 inch reel Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal Capacitance: 6pF Power dissipation: 0.15W |
на замовлення 7296 шт: термін постачання 21-30 дні (днів) |
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| TS53YL501MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 500Ω; 250mW; SMD; ±20%; 200V
Type of potentiometer: mounting
Kind of potentiometer: single turn
Resistance: 500Ω
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Track material: cermet
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1.5Ncm
IP rating: IP67
Leads: YL
Operating temperature: -55...155°C
Operating voltage: 200V
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 500Ω; 250mW; SMD; ±20%; 200V
Type of potentiometer: mounting
Kind of potentiometer: single turn
Resistance: 500Ω
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Track material: cermet
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1.5Ncm
IP rating: IP67
Leads: YL
Operating temperature: -55...155°C
Operating voltage: 200V
на замовлення 583 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 137.77 грн |
| 10+ | 113.17 грн |
| 25+ | 105.79 грн |
| 50+ | 100.87 грн |
| 100+ | 95.13 грн |
| 200+ | 91.03 грн |
| TS53YL503MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 50kΩ; 250mW; SMD; ±20%; 200V
Resistance: 50kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±20%
IP rating: IP67
Characteristics: linear
Kind of potentiometer: single turn
Body dimensions: 5x5x2.7mm
Power: 0.25W
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Track material: cermet
Type of potentiometer: mounting
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 50kΩ; 250mW; SMD; ±20%; 200V
Resistance: 50kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±20%
IP rating: IP67
Characteristics: linear
Kind of potentiometer: single turn
Body dimensions: 5x5x2.7mm
Power: 0.25W
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Track material: cermet
Type of potentiometer: mounting
на замовлення 383 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.46 грн |
| TS53YL502MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 5kΩ; 250mW; SMD; ±20%; linear
Type of potentiometer: mounting
Kind of potentiometer: single turn
Resistance: 5kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Track material: cermet
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1.5Ncm
IP rating: IP67
Leads: YL
Operating temperature: -55...155°C
Operating voltage: 200V
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 5kΩ; 250mW; SMD; ±20%; linear
Type of potentiometer: mounting
Kind of potentiometer: single turn
Resistance: 5kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Track material: cermet
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1.5Ncm
IP rating: IP67
Leads: YL
Operating temperature: -55...155°C
Operating voltage: 200V
на замовлення 2628 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 137.77 грн |
| 10+ | 109.07 грн |
| 25+ | 104.15 грн |
| 50+ | 100.05 грн |
| 100+ | 96.77 грн |
| 250+ | 92.67 грн |
| 249FGJS0XB25103KA |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 10kΩ; 1W; ±10%; 6.35mm; THT; Shaft: smooth; 249
Resistance: 10kΩ
Mounting: THT
Operating temperature: -55...125°C
Tolerance: ±10%
Shaft surface: smooth
Power: 1W
Shaft diameter: 6.35mm
Linearity tolerance: ±10%
Max. operating voltage: 300V AC
Temperature coefficient: 100ppm/°C
Electrical rotation angle: 265°
Manufacturer series: 249
Track material: cermet
Type of potentiometer: shaft
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 10kΩ; 1W; ±10%; 6.35mm; THT; Shaft: smooth; 249
Resistance: 10kΩ
Mounting: THT
Operating temperature: -55...125°C
Tolerance: ±10%
Shaft surface: smooth
Power: 1W
Shaft diameter: 6.35mm
Linearity tolerance: ±10%
Max. operating voltage: 300V AC
Temperature coefficient: 100ppm/°C
Electrical rotation angle: 265°
Manufacturer series: 249
Track material: cermet
Type of potentiometer: shaft
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1246.11 грн |
| 293D336X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
товару немає в наявності
В кошику
од. на суму грн.
| BAW56-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
на замовлення 13820 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 84+ | 4.92 грн |
| 133+ | 3.09 грн |
| 500+ | 2.34 грн |
| 1000+ | 2.11 грн |
| 3000+ | 1.84 грн |
| 6000+ | 1.71 грн |
| 12000+ | 1.62 грн |
| BAW56-G3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| CRCW040210K0FKTDBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 434700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 700+ | 0.68 грн |
| 2500+ | 0.17 грн |
| 5500+ | 0.07 грн |
| 10000+ | 0.05 грн |
| IRLR120TRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.59 грн |
| 14+ | 30.67 грн |
| 25+ | 27.14 грн |
| 100+ | 24.36 грн |
| 500+ | 23.21 грн |
| MAL219826681E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20%
Mounting: SNAP-IN
Operating temperature: -40...85°C
Capacitance: 680µF
Height: 60mm
Diameter: 35mm
Terminal pitch: 10mm
Body dimensions: Ø35x60mm
Tolerance: ±20%
Operating voltage: 400V DC
Service life: 15000h
Type of capacitor: electrolytic
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20%
Mounting: SNAP-IN
Operating temperature: -40...85°C
Capacitance: 680µF
Height: 60mm
Diameter: 35mm
Terminal pitch: 10mm
Body dimensions: Ø35x60mm
Tolerance: ±20%
Operating voltage: 400V DC
Service life: 15000h
Type of capacitor: electrolytic
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1426.27 грн |
| SIHA180N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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| SIHB180N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHD180N60E-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHG080N60E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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| SIHG180N60E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| SIHH080N60E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHH180N60E-T1-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHP180N60E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| MAL219866151E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 150µF
Operating voltage: 400V DC
Body dimensions: Ø22x40mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Height: 40mm
Diameter: 22mm
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 150µF
Operating voltage: 400V DC
Body dimensions: Ø22x40mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Height: 40mm
Diameter: 22mm
Terminal pitch: 10mm
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 487.49 грн |
| 5+ | 393.63 грн |
| SMBJ5.0A-E3/52 | ![]() |
![]() |
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Leakage current: 0.8mA
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Leakage current: 0.8mA
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Tolerance: ±5%
на замовлення 14914 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.43 грн |
| 31+ | 13.28 грн |
| 51+ | 8.12 грн |
| 100+ | 6.50 грн |
| 250+ | 5.08 грн |
| 400+ | 4.60 грн |
| 750+ | 4.13 грн |
| 1500+ | 3.94 грн |
| SMBJ5.0A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.55 грн |
| 28+ | 15.09 грн |
| 33+ | 12.79 грн |
| 43+ | 9.58 грн |
| 100+ | 5.77 грн |
| 500+ | 4.51 грн |
| SMBJ5.0D-M3/H |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 511 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.20 грн |
| 35+ | 11.89 грн |
| 100+ | 8.28 грн |
| 500+ | 6.40 грн |
| BFC233840105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 26x12x22mm
Operating voltage: 300V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 26x12x22mm
Operating voltage: 300V AC; 630V DC
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 674.72 грн |
| 5+ | 538.78 грн |
| 10+ | 490.39 грн |
| 25+ | 433.81 грн |
| 50+ | 397.73 грн |
| 100+ | 370.67 грн |
| 150+ | 364.11 грн |
| BFC233910105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±10%
Mounting: THT
Body dimensions: 26x12x22mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±10%
Mounting: THT
Body dimensions: 26x12x22mm
Operating voltage: 310V AC; 630V DC
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.09 грн |
| 16+ | 26.16 грн |
| 25+ | 25.01 грн |
| 50+ | 24.03 грн |
| 150+ | 23.45 грн |
| BFC233921105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 27.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 31x11x21mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 27.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 31x11x21mm
Operating voltage: 310V AC; 630V DC
на замовлення 214 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.60 грн |
| 10+ | 41.08 грн |
| 25+ | 33.70 грн |
| 50+ | 29.93 грн |
| 100+ | 28.05 грн |
| BFC233926105 |
![]() |
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 26x10x19.5mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 1µF
Terminal pitch: 22.5mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 26x10x19.5mm
Operating voltage: 310V AC; 630V DC
на замовлення 348 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.78 грн |
| SFH6206-3X001T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
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| BAT85S-TAP |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: Ammo Pack
на замовлення 8247 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.95 грн |
| 60+ | 6.89 грн |
| 66+ | 6.23 грн |
| 100+ | 4.47 грн |
| 500+ | 3.52 грн |
| 1000+ | 3.18 грн |
| 2000+ | 2.89 грн |
| 5000+ | 2.87 грн |
| BAT85S-TR |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Case: DO35
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: 14 inch reel
Features of semiconductor devices: small signal
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Case: DO35
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: 14 inch reel
Features of semiconductor devices: small signal
на замовлення 2851 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 35+ | 11.73 грн |
| 100+ | 6.10 грн |
| 500+ | 4.08 грн |
| 1000+ | 3.57 грн |
| 2000+ | 3.18 грн |
| MAL213651222E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Diameter: 18mm
Body dimensions: Ø18x35mm
Height: 35mm
Terminal pitch: 7.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Diameter: 18mm
Body dimensions: Ø18x35mm
Height: 35mm
Terminal pitch: 7.5mm
на замовлення 278 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 234.92 грн |
| 100+ | 173.03 грн |
| 200+ | 160.73 грн |
| ZRC00KL2221H00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 18x35.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 18x35.5mm
на замовлення 160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 217.25 грн |
| 10+ | 121.37 грн |
| 50+ | 90.21 грн |
| 100+ | 76.27 грн |
| SIHB12N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
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| SIHF12N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
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| SIHP12N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
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| 293D226X9010A2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1206
Case - mm: 3216
Case: A
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1206
Case - mm: 3216
Case: A
Manufacturer series: Tantamount
на замовлення 7881 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.08 грн |
| 33+ | 12.79 грн |
| 50+ | 9.51 грн |
| 100+ | 8.61 грн |
| 250+ | 7.63 грн |
| 500+ | 7.22 грн |
| 1000+ | 6.81 грн |
| 2000+ | 6.56 грн |
| 4000+ | 6.31 грн |
| 293D226X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
на замовлення 4748 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.55 грн |
| 40+ | 10.41 грн |
| 100+ | 8.28 грн |
| 500+ | 7.30 грн |
| 1000+ | 6.97 грн |
| 2000+ | 6.64 грн |
| 4000+ | 6.31 грн |
| IRF9520PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
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| IRF9520SPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: tube
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| IRF9520STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Kind of package: reel; tape
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| NTCLE100E3474JB0 |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW
Resistance: 470kΩ
Operating temperature: -40...125°C
Power: 0.5W
Mounting: THT
Material constant B: 4570K
Type of sensor: NTC thermistor
Category: THT measurement NTC thermistors
Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW
Resistance: 470kΩ
Operating temperature: -40...125°C
Power: 0.5W
Mounting: THT
Material constant B: 4570K
Type of sensor: NTC thermistor
на замовлення 1198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.14 грн |
| 50+ | 24.93 грн |
| 100+ | 23.70 грн |
| 300+ | 21.24 грн |
| 500+ | 20.01 грн |
| 1000+ | 19.27 грн |
| CNY70 |
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Виробник: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Kind of optocoupler: reflective
Kind of output: transistor
Collector-emitter voltage: 32V
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Kind of optocoupler: reflective
Kind of output: transistor
Collector-emitter voltage: 32V
на замовлення 3042 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.74 грн |
| 30+ | 32.23 грн |
| 50+ | 31.82 грн |
| 1.5KE36A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 863 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.79 грн |
| 16+ | 27.14 грн |
| 50+ | 24.36 грн |
| 100+ | 22.96 грн |
| 500+ | 19.60 грн |
| 1.5KE36CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 707 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.33 грн |
| 15+ | 28.54 грн |
| 50+ | 23.62 грн |
| 100+ | 21.40 грн |
| 200+ | 19.27 грн |
| 500+ | 17.63 грн |
| IRLZ44PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±10V
Kind of package: tube
Gate charge: 66nC
On-state resistance: 28mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±10V
Kind of package: tube
Gate charge: 66nC
On-state resistance: 28mΩ
на замовлення 369 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.76 грн |
| 10+ | 87.75 грн |
| 50+ | 78.73 грн |
| 100+ | 75.45 грн |
| 250+ | 70.52 грн |
| CRCW08054R70FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 14162 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.18 грн |
| 162+ | 2.54 грн |
| 232+ | 1.77 грн |
| 272+ | 1.51 грн |
| 500+ | 1.08 грн |
| 1000+ | 0.96 грн |
| 2500+ | 0.83 грн |
| 5000+ | 0.77 грн |
| CRCW08054R70FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
Mounting: SMD
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 6.63 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.17 грн |
| CRCW12064R70FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; 200V; -55÷125°C
Power: 0.25W
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±1%
Operating voltage: 200V
Case - mm: 3216
Type of resistor: thick film
Resistance: 4.7Ω
Case - inch: 1206
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; 200V; -55÷125°C
Power: 0.25W
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±1%
Operating voltage: 200V
Case - mm: 3216
Type of resistor: thick film
Resistance: 4.7Ω
Case - inch: 1206
на замовлення 7969 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.18 грн |
| 143+ | 2.87 грн |
| 262+ | 1.57 грн |
| 500+ | 1.15 грн |
| 1000+ | 1.03 грн |
| 2500+ | 0.92 грн |
| P16NP105MAB15 |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered
Resistance: 1MΩ
Power: 1W
Tolerance: ±20%
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Mounting: soldered
Operating temperature: -40...85°C
Panel cutout diameter: 10mm
Knob dimensions: Ø16x8mm
Electrical rotation angle: 270°
Leads: solder lugs
Track material: cermet
Potentiometer features: for industrial use; with knob
Kind of potentiometer: single turn
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered
Resistance: 1MΩ
Power: 1W
Tolerance: ±20%
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Mounting: soldered
Operating temperature: -40...85°C
Panel cutout diameter: 10mm
Knob dimensions: Ø16x8mm
Electrical rotation angle: 270°
Leads: solder lugs
Track material: cermet
Potentiometer features: for industrial use; with knob
Kind of potentiometer: single turn
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1413.91 грн |
| SI2302CDS-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 505 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.33 грн |
| 18+ | 23.95 грн |
| 50+ | 18.86 грн |
| 100+ | 16.98 грн |
| 500+ | 13.20 грн |
| SI2302DDS-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2374 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.73 грн |
| 22+ | 19.52 грн |
| 25+ | 17.30 грн |
| 100+ | 13.86 грн |
| 500+ | 10.33 грн |
| 1000+ | 9.02 грн |
| SIHB8N50D-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHF8N50D-E3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| SIHP8N50D-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| BFC236855474 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT
Mounting: THT
Type of capacitor: polyester
Operating temperature: -55...85°C
Capacitance: 0.47µF
Lead length: 0.8mm
Terminal pitch: 22.5mm
Body dimensions: 8x20x26mm
Tolerance: ±10%
Operating voltage: 220V AC; 400V DC
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT
Mounting: THT
Type of capacitor: polyester
Operating temperature: -55...85°C
Capacitance: 0.47µF
Lead length: 0.8mm
Terminal pitch: 22.5mm
Body dimensions: 8x20x26mm
Tolerance: ±10%
Operating voltage: 220V AC; 400V DC
на замовлення 367 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.69 грн |
| 50+ | 86.11 грн |
| 100+ | 79.55 грн |
| 250+ | 72.17 грн |
| DG408DJ-E3 | ![]() |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Number of channels: 1
Case: DIP16
Supply voltage: 5...20V; 5...36V
Mounting: THT
Kind of package: tube
Resistance: 100Ω
Output configuration: 8:1
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Number of channels: 1
Case: DIP16
Supply voltage: 5...20V; 5...36V
Mounting: THT
Kind of package: tube
Resistance: 100Ω
Output configuration: 8:1
на замовлення 140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 144.83 грн |
| 25+ | 132.85 грн |
| 125+ | 127.11 грн |
| DG408DQ-T1-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 100Ω
Output configuration: 8:1
Application: automotive industry
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 100Ω
Output configuration: 8:1
Application: automotive industry
на замовлення 2914 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 146.60 грн |
| 10+ | 122.19 грн |
| 100+ | 113.99 грн |
| 250+ | 108.25 грн |
| 500+ | 97.59 грн |
| 1000+ | 91.03 грн |
| DG408DY-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: tube
Resistance: 100Ω
Output configuration: 8:1
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: tube
Resistance: 100Ω
Output configuration: 8:1
на замовлення 240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 218.14 грн |
| 10+ | 136.95 грн |
| 25+ | 120.55 грн |
| 50+ | 110.71 грн |
| 100+ | 100.87 грн |
| DG408DY-T1-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 100Ω
Output configuration: 8:1
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 100Ω
Output configuration: 8:1
на замовлення 1739 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.02 грн |
| 10+ | 99.23 грн |
| 25+ | 91.85 грн |
| 50+ | 86.93 грн |
| 100+ | 82.83 грн |
| 250+ | 76.27 грн |
| 500+ | 70.52 грн |
| 1000+ | 66.42 грн |
| BAT46-TAP |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 100V; 0.15A; DO35; Ufmax: 1V; 150mW
Type of diode: Schottky switching
Case: DO35
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.75A
Kind of package: 14 inch reel
Features of semiconductor devices: small signal
Capacitance: 10pF
Leakage current: 20µA
Power dissipation: 0.15W
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 100V; 0.15A; DO35; Ufmax: 1V; 150mW
Type of diode: Schottky switching
Case: DO35
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.75A
Kind of package: 14 inch reel
Features of semiconductor devices: small signal
Capacitance: 10pF
Leakage current: 20µA
Power dissipation: 0.15W
на замовлення 3431 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.46 грн |
| 110+ | 3.74 грн |
| 500+ | 3.30 грн |
| 2500+ | 3.03 грн |
| BAT46W-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 100V; 0.1A; 7 inch reel
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.25V
Max. load current: 0.35A
Max. forward impulse current: 0.75A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Capacitance: 6pF
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 100V; 0.1A; 7 inch reel
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.25V
Max. load current: 0.35A
Max. forward impulse current: 0.75A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Capacitance: 6pF
Power dissipation: 0.15W
на замовлення 7296 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.13 грн |
| 36+ | 11.48 грн |
| 40+ | 10.41 грн |
| 100+ | 6.69 грн |
| 500+ | 4.76 грн |
| 1000+ | 4.09 грн |
| 3000+ | 3.49 грн |




































