Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41148) > Сторінка 172 з 686
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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AU2PM-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.3A TO277ACurrent - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.3A Capacitance @ Vr, F: 29pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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AU3PKHM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.4A TO277AVoltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.4A Capacitance @ Vr, F: 42pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AU3PKHM3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.4A TO277ACurrent - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.4A Capacitance @ Vr, F: 42pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AU3PK-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.4A TO277A |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||||
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AU3PM-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.4A TO277ACurrent - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.4A Capacitance @ Vr, F: 42pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SS2P5-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 2A DO220AACurrent - Reverse Leakage @ Vr: 100 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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VESD01-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 1VWM 9VC SOD523Power Line Protection: No Power - Peak Pulse: 63W Voltage - Clamping (Max) @ Ipp: 9V (Typ) Voltage - Breakdown (Min): 1.5V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 1V (Max) Current - Peak Pulse (10/1000µs): 7A (8/20µs) Capacitance @ Frequency: 180pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VESD03-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3VWM 12VC SOD523 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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VESD05A1-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12VC SOD523Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) Voltage - Clamping (Max) @ Ipp: 12V Voltage - Breakdown (Min): 6V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 16A (8/20µs) Capacitance @ Frequency: 130pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Power Line Protection: No Power - Peak Pulse: 192W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VESD05A1B-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 11VC SOD523 Power Line Protection: No Power - Peak Pulse: 33W Voltage - Clamping (Max) @ Ipp: 11V Voltage - Breakdown (Min): 6V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 19pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VESD05-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 20VC SOD523 Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) Power Line Protection: No Power - Peak Pulse: 120W Voltage - Clamping (Max) @ Ipp: 20V (Typ) Voltage - Breakdown (Min): 6.5V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 6A (8/20µs) Capacitance @ Frequency: 55pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VESD12-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12VWM 25VC SOD523Power Line Protection: No Power - Peak Pulse: 25W Voltage - Clamping (Max) @ Ipp: 25V (Typ) Voltage - Breakdown (Min): 14V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 12V (Max) Current - Peak Pulse (10/1000µs): 2A (8/20µs) Capacitance @ Frequency: 30pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VESD05A1B-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 11VC SOD523 Power Line Protection: No Power - Peak Pulse: 33W Voltage - Clamping (Max) @ Ipp: 11V Voltage - Breakdown (Min): 6V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 19pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VESD05-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 20VC SOD523 Power Line Protection: No Power - Peak Pulse: 120W Voltage - Clamping (Max) @ Ipp: 20V (Typ) Voltage - Breakdown (Min): 6.5V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 6A (8/20µs) Capacitance @ Frequency: 55pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VESD03-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3VWM 12VC SOD523 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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VESD01-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 1VWM 9VC SOD523Power Line Protection: No Power - Peak Pulse: 63W Voltage - Clamping (Max) @ Ipp: 9V (Typ) Voltage - Breakdown (Min): 1.5V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 1V (Max) Current - Peak Pulse (10/1000µs): 7A (8/20µs) Capacitance @ Frequency: 180pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VESD12-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12VWM 25VC SOD523Power Line Protection: No Power - Peak Pulse: 25W Voltage - Clamping (Max) @ Ipp: 25V (Typ) Voltage - Breakdown (Min): 14V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 12V (Max) Current - Peak Pulse (10/1000µs): 2A (8/20µs) Capacitance @ Frequency: 30pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VESD05A1-02V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12VC SOD523Power Line Protection: No Power - Peak Pulse: 192W Voltage - Clamping (Max) @ Ipp: 12V Voltage - Breakdown (Min): 6V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 16A (8/20µs) Capacitance @ Frequency: 130pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-MBRA120TRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 1A DO214ACCurrent - Reverse Leakage @ Vr: 200 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-MURB1620CTPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 8A TO263ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AR1PM-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1A DO220AACurrent - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 11938 шт: термін постачання 21-31 дні (днів) |
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AS1PD-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 200V 1.5A DO220AACurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 5371 шт: термін постачання 21-31 дні (днів) |
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AS1PG-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 400V 1.5A DO220AACurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 1119 шт: термін постачання 21-31 дні (днів) |
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AS1PJ-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 600V 1.5A DO220AACurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 2626 шт: термін постачання 21-31 дні (днів) |
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AS1PK-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 800V 1.5A DO220AACurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AS1PM-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.5A DO220AACurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 11900 шт: термін постачання 21-31 дні (днів) |
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AS4PM-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 2.4A TO277AMounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2.4A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) |
на замовлення 2790 шт: термін постачання 21-31 дні (днів) |
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AU1PM-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 56280 шт: термін постачання 21-31 дні (днів) |
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AU2PJ-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1.6A TO277A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AU2PM-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.3A TO277ACurrent - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.3A Capacitance @ Vr, F: 29pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AU3PM-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.4A TO277AVoltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.4A Capacitance @ Vr, F: 42pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 8883 шт: термін постачання 21-31 дні (днів) |
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AS3PG-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 2.1A TO277ACurrent - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2.1A Capacitance @ Vr, F: 37pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BYV26EGP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1A DO204ACPackaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RGP10M-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 4480 шт: термін постачання 21-31 дні (днів) |
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SB360-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO201ADPackaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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MB6S-E3/80 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 0.5A TO269AAPackaging: Cut Tape (CT) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TO-269AA (MBS) Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 8706 шт: термін постачання 21-31 дні (днів) |
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SBYV26C-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 |
на замовлення 28522 шт: термін постачання 21-31 дні (днів) |
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BAT54C-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 30V 200MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 69809 шт: термін постачання 21-31 дні (днів) |
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US1J-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 48924 шт: термін постачання 21-31 дні (днів) |
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VS-10TTS08STRLPBF | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 10A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 15 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz Current - On State (It (AV)) (Max): 6.5 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.15 V Current - Off State (Max): 50 µA Supplier Device Package: TO-263AB (D2PAK) Part Status: Discontinued at Digi-Key Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAS16-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 75V 150MA SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 1218 шт: термін постачання 21-31 дні (днів) |
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BAW56-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 70V 250MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
на замовлення 11977 шт: термін постачання 21-31 дні (днів) |
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BZD27C5V6P-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 800MW DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-219AB (SMF) Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 2 V |
на замовлення 31223 шт: термін постачання 21-31 дні (днів) |
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| VS-MBRA140TRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 38pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 8609 шт: термін постачання 21-31 дні (днів) |
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VS-MBRS1100TRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-MBRS360TRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SL03-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1.1A DO219AB |
на замовлення 14461 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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VBUS052BD-HTF-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 16VC 4-LLP75Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 4-LLP75 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.9V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 45W Power Line Protection: No |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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AS4PD-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2.4A TO277ACurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2.4A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3805 шт: термін постачання 21-31 дні (днів) |
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AU2PK-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.3A TO277ACurrent - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.3A Capacitance @ Vr, F: 29pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AS4PJ-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2.4A TO277AReverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2.4A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Avalanche |
на замовлення 929 шт: термін постачання 21-31 дні (днів) |
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AR1PJ-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1A DO220AACurrent - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 140 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 3241 шт: термін постачання 21-31 дні (днів) |
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AR1PG-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1A DO220AACurrent - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 140 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 5860 шт: термін постачання 21-31 дні (днів) |
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VCUT05D1-SD0-G4-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.5VWM 13VC CLP0603 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VCUT05D1-SD0-G4-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.5VWM 13VC CLP0603 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AU1PD-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 1A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 8880 шт: термін постачання 21-31 дні (днів) |
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AU1PG-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 4452 шт: термін постачання 21-31 дні (днів) |
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SS2P5-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 2A DO220AACurrent - Reverse Leakage @ Vr: 100 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 6856 шт: термін постачання 21-31 дні (днів) |
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AU1PJ-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 4504 шт: термін постачання 21-31 дні (днів) |
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VS-FB190SA10 | Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 100V 190A SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tj) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 4.35V @ 250µA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| AU2PM-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE AVALANCHE 1KV 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| AU3PKHM3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE AVALANCHE 800V 1.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| AU3PKHM3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE AVALANCHE 800V 1.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| AU3PK-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A TO277A
Description: DIODE AVALANCHE 800V 1.4A TO277A
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| AU3PM-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE AVALANCHE 1KV 1.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 36.29 грн |
| SS2P5-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 2A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.76 грн |
| 6000+ | 5.67 грн |
| VESD01-02V-G-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 1VWM 9VC SOD523
Power Line Protection: No
Power - Peak Pulse: 63W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 1.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 1V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: TVS DIODE 1VWM 9VC SOD523
Power Line Protection: No
Power - Peak Pulse: 63W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 1.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 1V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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| VESD03-02V-G-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3VWM 12VC SOD523
Description: TVS DIODE 3VWM 12VC SOD523
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| VESD05A1-02V-G-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC SOD523
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 130pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Power Line Protection: No
Power - Peak Pulse: 192W
Description: TVS DIODE 5VWM 12VC SOD523
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 130pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Power Line Protection: No
Power - Peak Pulse: 192W
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| VESD05A1B-02V-G-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 11VC SOD523
Power Line Protection: No
Power - Peak Pulse: 33W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5VWM 11VC SOD523
Power Line Protection: No
Power - Peak Pulse: 33W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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| VESD05-02V-G-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 20VC SOD523
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Description: TVS DIODE 5VWM 20VC SOD523
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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| VESD12-02V-G-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 25VC SOD523
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: TVS DIODE 12VWM 25VC SOD523
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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| VESD05A1B-02V-G-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 11VC SOD523
Power Line Protection: No
Power - Peak Pulse: 33W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM 11VC SOD523
Power Line Protection: No
Power - Peak Pulse: 33W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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| VESD05-02V-G-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 20VC SOD523
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM 20VC SOD523
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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| VESD03-02V-G-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3VWM 12VC SOD523
Description: TVS DIODE 3VWM 12VC SOD523
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| VESD01-02V-G-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 1VWM 9VC SOD523
Power Line Protection: No
Power - Peak Pulse: 63W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 1.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 1V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: TVS DIODE 1VWM 9VC SOD523
Power Line Protection: No
Power - Peak Pulse: 63W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 1.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 1V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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| VESD12-02V-G-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 25VC SOD523
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: TVS DIODE 12VWM 25VC SOD523
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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| VESD05A1-02V-G-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC SOD523
Power Line Protection: No
Power - Peak Pulse: 192W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 130pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM 12VC SOD523
Power Line Protection: No
Power - Peak Pulse: 192W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 130pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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| VS-MBRA120TRPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 20V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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| VS-MURB1620CTPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE ARRAY GP 200V 8A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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| AR1PM-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 1KV 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 11938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.21 грн |
| 15+ | 20.50 грн |
| 100+ | 13.03 грн |
| 500+ | 9.95 грн |
| 1000+ | 7.06 грн |
| AS1PD-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE AVAL 200V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 5371 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.78 грн |
| 10+ | 37.22 грн |
| 100+ | 25.87 грн |
| 500+ | 18.96 грн |
| 1000+ | 15.41 грн |
| AS1PG-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE AVAL 400V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 1119 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.78 грн |
| 10+ | 37.22 грн |
| 100+ | 25.87 грн |
| 500+ | 18.96 грн |
| 1000+ | 15.41 грн |
| AS1PJ-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE AVAL 600V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 2626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.78 грн |
| 10+ | 37.22 грн |
| 100+ | 25.87 грн |
| 500+ | 18.96 грн |
| 1000+ | 15.41 грн |
| AS1PK-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE AVAL 800V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
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| AS1PM-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 1KV 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 11900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.92 грн |
| 10+ | 39.26 грн |
| 100+ | 27.26 грн |
| 500+ | 19.97 грн |
| 1000+ | 16.24 грн |
| AS4PM-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2.4A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Description: DIODE AVALANCHE 1KV 2.4A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.13 грн |
| 10+ | 49.32 грн |
| 100+ | 37.82 грн |
| 500+ | 28.06 грн |
| AU1PM-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 56280 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 59.70 грн |
| 10+ | 36.01 грн |
| 100+ | 23.28 грн |
| 500+ | 16.72 грн |
| 1000+ | 15.06 грн |
| AU2PJ-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.6A TO277A
Description: DIODE AVALANCHE 600V 1.6A TO277A
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| AU2PM-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 1KV 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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од. на суму грн.
| AU3PM-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 8883 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 74.63 грн |
| 10+ | 64.38 грн |
| 100+ | 50.18 грн |
| 500+ | 38.90 грн |
| AS3PG-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2.1A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 400V 2.1A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 52.63 грн |
| 10+ | 44.71 грн |
| 100+ | 34.30 грн |
| 500+ | 25.45 грн |
| BYV26EGP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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| RGP10M-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 4480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 97.41 грн |
| 10+ | 58.93 грн |
| 100+ | 39.03 грн |
| 500+ | 28.59 грн |
| 1000+ | 26.00 грн |
| SB360-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 41.63 грн |
| MB6S-E3/80 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 8706 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 55.77 грн |
| 10+ | 33.28 грн |
| 100+ | 21.50 грн |
| 500+ | 15.38 грн |
| 1000+ | 13.84 грн |
| SBYV26C-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
на замовлення 28522 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 101.34 грн |
| 10+ | 61.58 грн |
| 100+ | 40.80 грн |
| 500+ | 29.93 грн |
| 1000+ | 27.24 грн |
| 2000+ | 24.97 грн |
| BAT54C-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 69809 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.99 грн |
| 16+ | 19.82 грн |
| 100+ | 12.54 грн |
| 500+ | 8.81 грн |
| 1000+ | 7.85 грн |
| US1J-E3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 48924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.42 грн |
| 17+ | 18.76 грн |
| 100+ | 11.82 грн |
| 500+ | 8.28 грн |
| VS-10TTS08STRLPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Current - On State (It (AV)) (Max): 6.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.15 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
Description: SCR 800V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Current - On State (It (AV)) (Max): 6.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.15 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
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| BAS16-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 75V 150MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1218 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 40+ | 7.86 грн |
| 71+ | 4.31 грн |
| 100+ | 4.30 грн |
| 500+ | 2.93 грн |
| 1000+ | 2.57 грн |
| BAW56-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 250MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 70V 250MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 11977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.35 грн |
| 21+ | 14.45 грн |
| 100+ | 9.05 грн |
| 500+ | 6.29 грн |
| 1000+ | 5.58 грн |
| BZD27C5V6P-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
на замовлення 31223 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.13 грн |
| 11+ | 28.29 грн |
| 100+ | 18.11 грн |
| 500+ | 12.87 грн |
| 1000+ | 11.55 грн |
| VS-MBRA140TRPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 8609 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 51.85 грн |
| 10+ | 31.17 грн |
| 100+ | 20.04 грн |
| 500+ | 14.30 грн |
| 1000+ | 12.85 грн |
| 2000+ | 11.62 грн |
| VS-MBRS1100TRPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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од. на суму грн.
| VS-MBRS360TRPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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од. на суму грн.
| SL03-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1.1A DO219AB
Description: DIODE SCHOTTKY 30V 1.1A DO219AB
на замовлення 14461 шт:
термін постачання 21-31 дні (днів)
| VBUS052BD-HTF-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 16VC 4-LLP75
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 4-LLP75
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
Description: TVS DIODE 5VWM 16VC 4-LLP75
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 4-LLP75
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| AS4PD-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 200V 2.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3805 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 50.28 грн |
| 10+ | 41.83 грн |
| 100+ | 28.93 грн |
| 500+ | 22.69 грн |
| AU2PK-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 800V 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| AS4PJ-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2.4A TO277A
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Description: DIODE AVALANCHE 600V 2.4A TO277A
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
на замовлення 929 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.56 грн |
| 10+ | 47.73 грн |
| 100+ | 36.62 грн |
| 500+ | 27.17 грн |
| AR1PJ-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 600V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 3241 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.56 грн |
| 12+ | 26.70 грн |
| 100+ | 18.20 грн |
| 500+ | 12.81 грн |
| 1000+ | 9.61 грн |
| AR1PG-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 400V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 5860 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.56 грн |
| 12+ | 26.70 грн |
| 100+ | 18.20 грн |
| 500+ | 12.81 грн |
| 1000+ | 9.61 грн |
| VCUT05D1-SD0-G4-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 13VC CLP0603
Description: TVS DIODE 5.5VWM 13VC CLP0603
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В кошику
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| VCUT05D1-SD0-G4-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 13VC CLP0603
Description: TVS DIODE 5.5VWM 13VC CLP0603
товару немає в наявності
В кошику
од. на суму грн.
| AU1PD-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 8880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.21 грн |
| 20+ | 15.58 грн |
| 100+ | 12.32 грн |
| 500+ | 10.74 грн |
| AU1PG-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE AVALANCHE 400V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 4452 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.85 грн |
| 16+ | 18.91 грн |
| 100+ | 16.61 грн |
| 500+ | 11.56 грн |
| 1000+ | 10.74 грн |
| SS2P5-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 50V 2A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 6856 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.07 грн |
| 28+ | 11.12 грн |
| 100+ | 10.20 грн |
| 500+ | 8.69 грн |
| AU1PJ-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE AVALANCHE 600V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 4504 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.42 грн |
| 15+ | 21.41 грн |
| 100+ | 16.61 грн |
| 500+ | 11.56 грн |
| 1000+ | 10.74 грн |
| VS-FB190SA10 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 100V 190A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tj)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4.35V @ 250µA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Description: MOSFET N-CH 100V 190A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tj)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4.35V @ 250µA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.









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