Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40248) > Сторінка 397 з 671
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
VS-20ETF12SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-25ETS12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 25A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
VS-25TTS12SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 45 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.25 V Current - Off State (Max): 10 mA Supplier Device Package: TO-263AB (D2PAK) Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 1.2 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-25TTS16SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 45 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.25 V Current - Off State (Max): 10 mA Supplier Device Package: TO-263AB (D2PAK) Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 1.6 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-30TPS12LHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 45 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz Current - On State (It (AV)) (Max): 20 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.3 V Current - Off State (Max): 10 mA Supplier Device Package: TO-247AD Part Status: Active Current - On State (It (RMS)) (Max): 30 A Voltage - Off State: 1.2 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 364 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-30TPS16LHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 45 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz Current - On State (It (AV)) (Max): 20 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.3 V Current - Off State (Max): 10 mA Supplier Device Package: TO-247AD Grade: Automotive Current - On State (It (RMS)) (Max): 30 A Voltage - Off State: 1.6 kV Qualification: AEC-Q101 |
на замовлення 473 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-40TPS12ALHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz Current - On State (It (AV)) (Max): 35 A Voltage - Gate Trigger (Vgt) (Max): 1.7 V Voltage - On State (Vtm) (Max): 1.85 V Current - Off State (Max): 500 µA Supplier Device Package: TO-247AD Part Status: Active Current - On State (It (RMS)) (Max): 55 A Voltage - Off State: 1.2 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 143 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-40TPS12LHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz Current - On State (It (AV)) (Max): 35 A Voltage - Gate Trigger (Vgt) (Max): 1.7 V Voltage - On State (Vtm) (Max): 1.85 V Current - Off State (Max): 500 µA Supplier Device Package: TO-247AD Part Status: Active Current - On State (It (RMS)) (Max): 55 A Voltage - Off State: 1.2 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 470 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-40TPS16LHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 500A @ 50Hz Current - On State (It (AV)) (Max): 35 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Voltage - On State (Vtm) (Max): 1.92 V Current - Off State (Max): 500 µA Supplier Device Package: TO-247AD Part Status: Active Current - On State (It (RMS)) (Max): 55 A Voltage - Off State: 1.6 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 917 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-8EWF06SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
VS-8EWS12SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-8EWS16SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-RA160FA120 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 91A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-RA220FA120 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 108A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 110 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V |
на замовлення 118 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-UFH280FA30 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 58 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 160A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V |
на замовлення 455 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4148WS-HG3-08 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
1N4148WS-HG3-18 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
VS-10CDU06-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-FC420SA15 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 200A, 10V Power Dissipation (Max): 909W (Tc) Vgs(th) (Max) @ Id: 5.4V @ 1mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V |
на замовлення 277 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-GT100DA120UF | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Current - Collector (Ic) (Max): 187 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 890 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V |
на замовлення 56 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-GT80DA120U | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 139 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 658 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-QA300FA17 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 71 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 200 A Current - Reverse Leakage @ Vr: 200 µA @ 170 V |
на замовлення 159 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VTVS3V3GSMF-HM3-18 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: 175°C (TJ) Capacitance @ Frequency: 2095pF @ 1MHz Current - Peak Pulse (10/1000µs): 43.99A Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.57V Voltage - Clamping (Max) @ Ipp: 8.9V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BYG10YHE3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Qualification: AEC-Q101 |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BYG10YHE3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
BYG10YHM3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Qualification: AEC-Q101 |
на замовлення 12600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BYG10YHM3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
GBUE2560-M3/P | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4.9 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 710 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-10ETF06SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 785 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-10ETF12SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1360 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-10ETS12SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 1127 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-20ETF06SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5516 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-20ETF12SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3426 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-25ETS12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 25A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 1526 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-25TTS12SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 45 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.25 V Current - Off State (Max): 10 mA Supplier Device Package: TO-263AB (D2PAK) Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 1.2 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6920 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-25TTS16SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 45 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.25 V Current - Off State (Max): 10 mA Supplier Device Package: TO-263AB (D2PAK) Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 1.6 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 830 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-50TPS12LHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 630A @ 50Hz Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 50 µA Supplier Device Package: TO-247AD Part Status: Active Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.2 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 456 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-8EWF06SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 796 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-8EWS12SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 3642 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-8EWS16SLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8418 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4148WS-HG3-08 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 534 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4148WS-HG3-18 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12332 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
VS-10CDU06-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
на замовлення 3979 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BYG10YHE3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Qualification: AEC-Q101 |
на замовлення 4702 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BYG10YHE3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3093 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BYG10YHM3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Qualification: AEC-Q101 |
на замовлення 14508 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BYG10YHM3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Qualification: AEC-Q101 |
на замовлення 29727 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1.5KE250A-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.4A Voltage - Reverse Standoff (Typ): 214V Supplier Device Package: 1.5KE Unidirectional Channels: 1 Voltage - Breakdown (Min): 237V Voltage - Clamping (Max) @ Ipp: 344V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1.5KE30A-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36.2A Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: 1.5KE Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
1N4002-E3/53 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 3780 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4003GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 5854 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4005-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 5915 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4005GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 5284 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4007-E3/53 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 1903 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4007E-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 2362 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4007GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 4952 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4007GPE-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 3954 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4936GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 2525 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4937-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 2511 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
1N4937GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 3736 шт: термін постачання 21-31 дні (днів) |
|
VS-20ETF12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 105.10 грн |
VS-25ETS12SLHM3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
VS-25TTS12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.2KV 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 94.39 грн |
VS-25TTS16SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.6 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.6KV 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.6 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 104.73 грн |
VS-30TPS12LHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.2KV 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 364 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 349.26 грн |
25+ | 192.19 грн |
100+ | 157.71 грн |
VS-30TPS16LHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-247AD
Grade: Automotive
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 1.6 kV
Qualification: AEC-Q101
Description: SCR 1.6KV 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-247AD
Grade: Automotive
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 1.6 kV
Qualification: AEC-Q101
на замовлення 473 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 356.62 грн |
50+ | 177.71 грн |
100+ | 161.64 грн |
VS-40TPS12ALHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 143 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 431.87 грн |
25+ | 242.60 грн |
100+ | 201.29 грн |
VS-40TPS12LHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 470 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 435.14 грн |
50+ | 222.01 грн |
100+ | 203.01 грн |
VS-40TPS16LHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.92 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.6 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.6KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.92 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.6 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 917 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 438.42 грн |
25+ | 246.60 грн |
100+ | 204.73 грн |
500+ | 160.71 грн |
VS-8EWF06SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
VS-8EWS12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 45.29 грн |
VS-8EWS16SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 1600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 46.14 грн |
6000+ | 42.68 грн |
VS-RA160FA120 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 91A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Description: DIODE MODULE GP 1200V 91A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1668.60 грн |
10+ | 1427.69 грн |
100+ | 1248.66 грн |
VS-RA220FA120 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 1200V 108A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 108A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 110 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Description: DIODE MOD GP 1200V 108A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 108A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 110 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1759.39 грн |
10+ | 1230.54 грн |
100+ | 1021.54 грн |
VS-UFH280FA30 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 300V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Description: DIODE MODULE GP 300V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
на замовлення 455 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1649.79 грн |
10+ | 1149.10 грн |
100+ | 939.84 грн |
1N4148WS-HG3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
1N4148WS-HG3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
VS-10CDU06-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 5A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE ARRAY GP 600V 5A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 46.02 грн |
VS-FC420SA15 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 150V 400A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 200A, 10V
Power Dissipation (Max): 909W (Tc)
Vgs(th) (Max) @ Id: 5.4V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
Description: MOSFET N-CH 150V 400A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 200A, 10V
Power Dissipation (Max): 909W (Tc)
Vgs(th) (Max) @ Id: 5.4V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 277 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1846.09 грн |
10+ | 1294.10 грн |
100+ | 1083.33 грн |
VS-GT100DA120UF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 187A 890W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 187 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 890 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
Description: IGBT MOD 1200V 187A 890W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 187 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 890 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2968.31 грн |
10+ | 2136.81 грн |
VS-GT80DA120U |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 139A 658W SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 139 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 658 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MOD 1200V 139A 658W SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 139 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 658 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2517.62 грн |
10+ | 1797.80 грн |
100+ | 1599.40 грн |
VS-QA300FA17 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOT 170V 300A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 71 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 200 A
Current - Reverse Leakage @ Vr: 200 µA @ 170 V
Description: DIODE MOD SCHOT 170V 300A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 71 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 200 A
Current - Reverse Leakage @ Vr: 200 µA @ 170 V
на замовлення 159 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2187.99 грн |
10+ | 1550.09 грн |
100+ | 1342.62 грн |
VTVS3V3GSMF-HM3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 8.9VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 175°C (TJ)
Capacitance @ Frequency: 2095pF @ 1MHz
Current - Peak Pulse (10/1000µs): 43.99A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.57V
Voltage - Clamping (Max) @ Ipp: 8.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 8.9VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 175°C (TJ)
Capacitance @ Frequency: 2095pF @ 1MHz
Current - Peak Pulse (10/1000µs): 43.99A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.57V
Voltage - Clamping (Max) @ Ipp: 8.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10000+ | 14.62 грн |
BYG10YHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 9.77 грн |
BYG10YHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
BYG10YHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
на замовлення 12600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 10.63 грн |
3600+ | 10.06 грн |
5400+ | 9.81 грн |
9000+ | 8.54 грн |
BYG10YHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7500+ | 10.40 грн |
15000+ | 9.61 грн |
GBUE2560-M3/P |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 4.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.9 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 4.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.9 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 710 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 363.17 грн |
20+ | 190.73 грн |
100+ | 177.28 грн |
500+ | 149.61 грн |
VS-10ETF06SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 785 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 161.13 грн |
10+ | 120.12 грн |
100+ | 92.71 грн |
VS-10ETF12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1360 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 203.67 грн |
10+ | 129.96 грн |
100+ | 95.65 грн |
VS-10ETS12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 1127 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 161.13 грн |
10+ | 105.15 грн |
100+ | 74.96 грн |
VS-20ETF06SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5516 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 265.01 грн |
10+ | 172.49 грн |
100+ | 134.83 грн |
VS-20ETF12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3426 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 259.29 грн |
10+ | 171.94 грн |
100+ | 125.26 грн |
VS-25ETS12SLHM3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 1526 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 196.31 грн |
10+ | 156.90 грн |
100+ | 124.88 грн |
VS-25TTS12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.2KV 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6920 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 281.37 грн |
10+ | 177.54 грн |
100+ | 124.63 грн |
VS-25TTS16SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.6 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.6KV 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.6 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 830 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 310.00 грн |
10+ | 196.20 грн |
100+ | 137.81 грн |
VS-50TPS12LHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 79A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 630A @ 50Hz
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.2KV 79A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 630A @ 50Hz
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 456 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 407.33 грн |
25+ | 242.06 грн |
100+ | 204.56 грн |
VS-8EWF06SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 796 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.06 грн |
10+ | 57.03 грн |
100+ | 56.95 грн |
VS-8EWS12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 3642 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 85.88 грн |
10+ | 66.24 грн |
100+ | 63.15 грн |
500+ | 50.15 грн |
1000+ | 45.92 грн |
VS-8EWS16SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 1600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8418 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 137.41 грн |
10+ | 93.73 грн |
100+ | 68.46 грн |
500+ | 51.21 грн |
1000+ | 47.02 грн |
1N4148WS-HG3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 534 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 13.09 грн |
37+ | 8.74 грн |
100+ | 7.18 грн |
500+ | 4.96 грн |
1N4148WS-HG3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12332 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 13.09 грн |
43+ | 7.40 грн |
100+ | 7.18 грн |
500+ | 4.96 грн |
1000+ | 4.25 грн |
2000+ | 3.90 грн |
5000+ | 3.32 грн |
VS-10CDU06-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE ARRAY GP 600V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 3979 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 111.24 грн |
10+ | 87.67 грн |
100+ | 68.19 грн |
500+ | 54.24 грн |
1000+ | 44.18 грн |
BYG10YHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
на замовлення 4702 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.63 грн |
14+ | 23.00 грн |
100+ | 19.42 грн |
500+ | 14.45 грн |
BYG10YHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3093 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.72 грн |
13+ | 24.50 грн |
100+ | 20.27 грн |
500+ | 14.49 грн |
1000+ | 11.85 грн |
2000+ | 10.45 грн |
BYG10YHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
на замовлення 14508 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 34.35 грн |
12+ | 26.39 грн |
100+ | 20.84 грн |
500+ | 14.85 грн |
BYG10YHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
на замовлення 29727 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 40.90 грн |
12+ | 27.57 грн |
100+ | 20.84 грн |
500+ | 14.85 грн |
1000+ | 12.67 грн |
2000+ | 11.93 грн |
1.5KE250A-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 214VWM 344VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 116.15 грн |
10+ | 70.65 грн |
100+ | 47.15 грн |
1.5KE30A-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 25.6VWM 41.4VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
1N4002-E3/53 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 3780 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.72 грн |
36+ | 8.90 грн |
100+ | 8.81 грн |
500+ | 5.52 грн |
1000+ | 4.38 грн |
1N4003GP-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5854 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 44.99 грн |
11+ | 30.56 грн |
100+ | 24.95 грн |
500+ | 17.93 грн |
1000+ | 16.06 грн |
1N4005-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
27+ | 12.27 грн |
39+ | 8.27 грн |
100+ | 6.48 грн |
500+ | 4.65 грн |
1000+ | 4.10 грн |
1N4005GP-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5284 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.72 грн |
12+ | 28.04 грн |
100+ | 22.89 грн |
500+ | 16.45 грн |
1000+ | 14.74 грн |
1N4007-E3/53 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1903 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.81 грн |
27+ | 11.81 грн |
100+ | 8.81 грн |
500+ | 6.28 грн |
1000+ | 5.57 грн |
1N4007E-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2362 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.45 грн |
25+ | 12.92 грн |
100+ | 9.22 грн |
500+ | 6.42 грн |
1000+ | 5.70 грн |
1N4007GP-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 4952 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 50.71 грн |
10+ | 33.87 грн |
100+ | 21.89 грн |
500+ | 15.70 грн |
1000+ | 14.14 грн |
1N4007GPE-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 3954 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 51.53 грн |
10+ | 34.03 грн |
100+ | 23.50 грн |
500+ | 18.16 грн |
1000+ | 14.19 грн |
1N4936GP-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 2525 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 48.26 грн |
10+ | 34.89 грн |
100+ | 25.06 грн |
500+ | 18.86 грн |
1000+ | 14.69 грн |
1N4937-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2511 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
27+ | 12.27 грн |
41+ | 7.80 грн |
100+ | 6.29 грн |
500+ | 4.79 грн |
1000+ | 4.24 грн |
1N4937GP-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3736 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 37.63 грн |
14+ | 23.71 грн |
100+ | 19.68 грн |
500+ | 14.70 грн |
1000+ | 11.96 грн |