Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40689) > Сторінка 398 з 679
| Фото | Назва | Виробник | Інформація |
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Ціна |
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| G2SBA60L-5700E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G2SBA60L-5701E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G2SBA60L-5701E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G2SBA60L-5702E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G2SBA60L-5703E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G2SBA60L-5704E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G2SBA60L-5705E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G2SBA60L-6826E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G2SBA60L-6847E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G2SBA60L-6847E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| UHF20FCTL-801E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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G2SB80-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-GT180DA120U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 1200V 281A SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 281 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1087 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V |
на замовлення 271 шт: термін постачання 21-31 дні (днів) |
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BZG05C10-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 1.25W DO214ACPackaging: Cut Tape (CT) Tolerance: ±6% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-214AC (SMA) Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 7 V |
на замовлення 6598 шт: термін постачання 21-31 дні (днів) |
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BZG05C15-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 1.25W DO214ACPackaging: Cut Tape (CT) Tolerance: ±6% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-214AC (SMA) Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 11 V |
на замовлення 3004 шт: термін постачання 21-31 дні (днів) |
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BZG05C39-HM3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 1.25W DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZG05C6V2-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 1.25W DO214ACPackaging: Cut Tape (CT) Tolerance: ±6.45% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
на замовлення 11522 шт: термін постачання 21-31 дні (днів) |
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BZG05C91-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 91V 1.25W DO214ACPackaging: Cut Tape (CT) Tolerance: ±6.04% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 91 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-214AC (SMA) Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 68 V |
на замовлення 6453 шт: термін постачання 21-31 дні (днів) |
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V10DM100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 5A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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V10DM100CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 5A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3342 шт: термін постачання 21-31 дні (днів) |
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V20DM100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 10A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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V20DM100CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 10A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1555 шт: термін постачання 21-31 дні (днів) |
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V2F6HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 250pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Current - Reverse Leakage @ Vr: 480 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 10402 шт: термін постачання 21-31 дні (днів) |
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V2FM12HM3/H | Vishay General Semiconductor - Diodes Division |
Description: 2A,120V,SMF,TRENCH SKY RECT. |
на замовлення 8925 шт: термін постачання 21-31 дні (днів) |
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V30DM100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 15A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A Current - Reverse Leakage @ Vr: 400 µA @ 100 V |
на замовлення 730 шт: термін постачання 21-31 дні (днів) |
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V30DM100CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 15A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A Current - Reverse Leakage @ Vr: 400 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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V30DM150C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 150V TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 150 V |
на замовлення 1978 шт: термін постачання 21-31 дні (днів) |
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V3F6-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 310pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V |
на замовлення 10732 шт: термін постачання 21-31 дні (днів) |
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V3FM12-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 3A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 220pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 120 V |
на замовлення 9895 шт: термін постачання 21-31 дні (днів) |
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V3FM15-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 3A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 150pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 3 A Current - Reverse Leakage @ Vr: 85 µA @ 150 V |
на замовлення 41941 шт: термін постачання 21-31 дні (днів) |
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V40DM100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 20A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A Current - Reverse Leakage @ Vr: 700 µA @ 100 V |
на замовлення 1224 шт: термін постачання 21-31 дні (днів) |
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V40DM100CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 20A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A Current - Reverse Leakage @ Vr: 700 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 736 шт: термін постачання 21-31 дні (днів) |
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V60DM100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 30A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A Current - Reverse Leakage @ Vr: 800 µA @ 100 V |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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V60DM100CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 30A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A Current - Reverse Leakage @ Vr: 800 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5135 шт: термін постачання 21-31 дні (днів) |
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VS-10ETF06SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-10ETF12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-10ETS12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-20ETF06SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 20A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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VS-20ETF12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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VS-25ETS12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 25A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-25TTS12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 25A TO-263AB (D2PAK)Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 45 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.25 V Current - Off State (Max): 10 mA Supplier Device Package: TO-263AB (D2PAK) Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 1.2 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6400 шт: термін постачання 21-31 дні (днів) |
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VS-25TTS16SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.6KV 25A TO-263AB (D2PAK)Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 45 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.25 V Current - Off State (Max): 10 mA Supplier Device Package: TO-263AB (D2PAK) Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 1.6 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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VS-30TPS12LHM3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 30A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 45 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz Current - On State (It (AV)) (Max): 20 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.3 V Current - Off State (Max): 10 mA Supplier Device Package: TO-247AD Part Status: Active Current - On State (It (RMS)) (Max): 30 A Voltage - Off State: 1.2 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 364 шт: термін постачання 21-31 дні (днів) |
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VS-30TPS16LHM3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.6KV 30A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 45 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz Current - On State (It (AV)) (Max): 20 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.3 V Current - Off State (Max): 10 mA Supplier Device Package: TO-247AD Grade: Automotive Current - On State (It (RMS)) (Max): 30 A Voltage - Off State: 1.6 kV Qualification: AEC-Q101 |
на замовлення 452 шт: термін постачання 21-31 дні (днів) |
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VS-40TPS12ALHM3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 55A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz Current - On State (It (AV)) (Max): 35 A Voltage - Gate Trigger (Vgt) (Max): 1.7 V Voltage - On State (Vtm) (Max): 1.85 V Current - Off State (Max): 500 µA Supplier Device Package: TO-247AD Part Status: Active Current - On State (It (RMS)) (Max): 55 A Voltage - Off State: 1.2 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 143 шт: термін постачання 21-31 дні (днів) |
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VS-40TPS12LHM3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 55A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz Current - On State (It (AV)) (Max): 35 A Voltage - Gate Trigger (Vgt) (Max): 1.7 V Voltage - On State (Vtm) (Max): 1.85 V Current - Off State (Max): 500 µA Supplier Device Package: TO-247AD Part Status: Active Current - On State (It (RMS)) (Max): 55 A Voltage - Off State: 1.2 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 470 шт: термін постачання 21-31 дні (днів) |
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VS-40TPS16LHM3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.6KV 55A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 500A @ 50Hz Current - On State (It (AV)) (Max): 35 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Voltage - On State (Vtm) (Max): 1.92 V Current - Off State (Max): 500 µA Supplier Device Package: TO-247AD Part Status: Active Current - On State (It (RMS)) (Max): 55 A Voltage - Off State: 1.6 kV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 917 шт: термін постачання 21-31 дні (днів) |
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VS-8EWF06SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 8A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-8EWS12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 8A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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VS-8EWS16SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1600V 8A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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VS-RA160FA120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 91A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 91A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V |
на замовлення 143 шт: термін постачання 21-31 дні (днів) |
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VS-RA220FA120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 1200V 108A SOT-227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 108A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 110 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V |
на замовлення 118 шт: термін постачання 21-31 дні (днів) |
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VS-UFH280FA30 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 300V 160A SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 58 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 160A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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1N4148WS-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 150MA SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4148WS-HG3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 150MA SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-10CDU06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 5A TO263ACPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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VS-FC420SA15 | Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 150V 400A SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 200A, 10V Power Dissipation (Max): 909W (Tc) Vgs(th) (Max) @ Id: 5.4V @ 1mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V |
на замовлення 1164 шт: термін постачання 21-31 дні (днів) |
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VS-GT100DA120UF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 187A 890W SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Current - Collector (Ic) (Max): 187 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 890 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V |
на замовлення 56 шт: термін постачання 21-31 дні (днів) |
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VS-GT80DA120U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 139A 658W SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 139 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 658 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
на замовлення 488 шт: термін постачання 21-31 дні (днів) |
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VS-QA300FA17 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD SCHOT 170V 300A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 71 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 200 A Current - Reverse Leakage @ Vr: 200 µA @ 170 V |
на замовлення 326 шт: термін постачання 21-31 дні (днів) |
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| G2SBA60L-5700E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5701E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5701E3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5702E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5703E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5704E3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5705E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-6826E3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-6847E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-6847E3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| UHF20FCTL-801E3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: DIODE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SB80-M3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-GT180DA120U |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 281A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 281 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Description: IGBT MODULE 1200V 281A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 281 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
на замовлення 271 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3298.96 грн |
| 10+ | 2387.24 грн |
| 100+ | 2211.10 грн |
| BZG05C10-M3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 7 V
Description: DIODE ZENER 10V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 7 V
на замовлення 6598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.95 грн |
| 17+ | 20.13 грн |
| 100+ | 10.39 грн |
| 500+ | 8.74 грн |
| BZG05C15-M3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Description: DIODE ZENER 15V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
на замовлення 3004 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.95 грн |
| 16+ | 20.79 грн |
| 100+ | 14.12 грн |
| 500+ | 10.26 грн |
| BZG05C39-HM3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.25W DO214AC
Description: DIODE ZENER 39V 1.25W DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| BZG05C6V2-M3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±6.45%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6.2V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±6.45%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
на замовлення 11522 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 31.09 грн |
| 16+ | 21.21 грн |
| 100+ | 12.74 грн |
| 500+ | 9.97 грн |
| BZG05C91-M3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±6.04%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Description: DIODE ZENER 91V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±6.04%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
на замовлення 6453 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.95 грн |
| 16+ | 20.79 грн |
| 100+ | 14.12 грн |
| 500+ | 10.63 грн |
| V10DM100C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| V10DM100CHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3342 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.18 грн |
| 10+ | 84.24 грн |
| 100+ | 56.33 грн |
| 500+ | 41.65 грн |
| 1000+ | 38.04 грн |
| V20DM100C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Description: DIODE ARR SCHOT 100V 10A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| V20DM100CHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 100V 10A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1555 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.18 грн |
| 10+ | 93.14 грн |
| 100+ | 67.45 грн |
| 500+ | 50.24 грн |
| 1000+ | 46.04 грн |
| V2F6HM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 480 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 480 µA @ 60 V
Qualification: AEC-Q101
на замовлення 10402 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.36 грн |
| 18+ | 18.88 грн |
| 100+ | 11.79 грн |
| 500+ | 10.15 грн |
| 1000+ | 9.54 грн |
| V2FM12HM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 2A,120V,SMF,TRENCH SKY RECT.
Description: 2A,120V,SMF,TRENCH SKY RECT.
на замовлення 8925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.27 грн |
| 13+ | 26.03 грн |
| 100+ | 16.22 грн |
| 500+ | 10.41 грн |
| 1000+ | 8.01 грн |
| V30DM100C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.90 грн |
| 10+ | 91.56 грн |
| 100+ | 72.66 грн |
| 500+ | 54.48 грн |
| V30DM100CHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.54 грн |
| 10+ | 102.70 грн |
| 100+ | 56.29 грн |
| 500+ | 51.51 грн |
| 1000+ | 51.10 грн |
| V30DM150C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 150V TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Description: DIODE ARRAY SCHOTT 150V TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.99 грн |
| 10+ | 114.43 грн |
| 100+ | 89.21 грн |
| 500+ | 69.16 грн |
| 1000+ | 56.66 грн |
| V3F6-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 310pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 310pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
на замовлення 10732 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.59 грн |
| 24+ | 13.97 грн |
| 100+ | 9.89 грн |
| 500+ | 6.89 грн |
| 1000+ | 6.11 грн |
| V3FM12-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 3A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Description: DIODE SCHOTTKY 120V 3A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
на замовлення 9895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.59 грн |
| 24+ | 13.97 грн |
| 100+ | 9.89 грн |
| 500+ | 6.89 грн |
| 1000+ | 6.11 грн |
| V3FM15-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 3 A
Current - Reverse Leakage @ Vr: 85 µA @ 150 V
Description: DIODE SCHOTTKY 150V 3A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 3 A
Current - Reverse Leakage @ Vr: 85 µA @ 150 V
на замовлення 41941 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.68 грн |
| 44+ | 7.73 грн |
| 100+ | 6.84 грн |
| 500+ | 6.11 грн |
| V40DM100C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Description: DIODE ARR SCHOT 100V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
на замовлення 1224 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 177.90 грн |
| 10+ | 116.26 грн |
| 100+ | 92.00 грн |
| 500+ | 69.40 грн |
| 1000+ | 63.96 грн |
| V40DM100CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 100V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 231.45 грн |
| 10+ | 144.37 грн |
| 100+ | 99.35 грн |
| 500+ | 75.18 грн |
| V60DM100C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Description: DIODE ARR SCHOT 100V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 194.31 грн |
| 10+ | 126.57 грн |
| V60DM100CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 100V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5135 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 169.27 грн |
| 10+ | 109.11 грн |
| 100+ | 104.43 грн |
| 500+ | 82.57 грн |
| 1000+ | 76.32 грн |
| VS-10ETF06SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-10ETF12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 71.13 грн |
| VS-10ETS12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 64.21 грн |
| VS-20ETF06SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 112.12 грн |
| 1600+ | 106.90 грн |
| VS-20ETF12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 110.97 грн |
| VS-25ETS12SLHM3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-25TTS12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 25A TO-263AB (D2PAK)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.2KV 25A TO-263AB (D2PAK)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 97.90 грн |
| VS-25TTS16SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 25A TO-263AB (D2PAK)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.6 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.6KV 25A TO-263AB (D2PAK)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.25 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.6 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 105.38 грн |
| 1600+ | 95.36 грн |
| VS-30TPS12LHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.2KV 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 364 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 368.76 грн |
| 25+ | 202.91 грн |
| 100+ | 166.51 грн |
| VS-30TPS16LHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-247AD
Grade: Automotive
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 1.6 kV
Qualification: AEC-Q101
Description: SCR 1.6KV 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-247AD
Grade: Automotive
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 1.6 kV
Qualification: AEC-Q101
на замовлення 452 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 350.62 грн |
| 50+ | 174.39 грн |
| 100+ | 158.61 грн |
| VS-40TPS12ALHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 143 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 462.03 грн |
| 25+ | 259.56 грн |
| 100+ | 215.37 грн |
| VS-40TPS12LHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 465.48 грн |
| 50+ | 237.53 грн |
| 100+ | 217.21 грн |
| VS-40TPS16LHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.92 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.6 kV
Grade: Automotive
Qualification: AEC-Q101
Description: SCR 1.6KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.92 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.6 kV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 917 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 468.94 грн |
| 25+ | 263.82 грн |
| 100+ | 219.05 грн |
| 500+ | 171.95 грн |
| VS-8EWF06SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-8EWS12SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 47.82 грн |
| VS-8EWS16SLHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 1600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 45.62 грн |
| 6000+ | 42.20 грн |
| VS-RA160FA120 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 91A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Description: DIODE MODULE GP 1200V 91A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 143 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1820.48 грн |
| 10+ | 1270.55 грн |
| 100+ | 1045.98 грн |
| VS-RA220FA120 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 1200V 108A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 108A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 110 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Description: DIODE MOD GP 1200V 108A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 108A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 110 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1857.61 грн |
| 10+ | 1299.24 грн |
| 100+ | 1078.57 грн |
| VS-UFH280FA30 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 300V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Description: DIODE MODULE GP 300V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1733.25 грн |
| 10+ | 1207.26 грн |
| 100+ | 987.41 грн |
| 1N4148WS-HG3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 1N4148WS-HG3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-10CDU06-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 5A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE ARRAY GP 600V 5A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 48.59 грн |
| VS-FC420SA15 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 150V 400A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 200A, 10V
Power Dissipation (Max): 909W (Tc)
Vgs(th) (Max) @ Id: 5.4V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
Description: MOSFET N-CH 150V 400A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 200A, 10V
Power Dissipation (Max): 909W (Tc)
Vgs(th) (Max) @ Id: 5.4V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 1164 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1939.65 грн |
| 10+ | 1359.61 грн |
| 100+ | 1138.17 грн |
| VS-GT100DA120UF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 187A 890W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 187 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 890 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
Description: IGBT MOD 1200V 187A 890W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 187 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 890 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3134.02 грн |
| 10+ | 2256.10 грн |
| VS-GT80DA120U |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 139A 658W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 139 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 658 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MOD 1200V 139A 658W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 139 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 658 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
на замовлення 488 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2644.35 грн |
| 10+ | 1888.77 грн |
| 100+ | 1680.37 грн |
| VS-QA300FA17 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOT 170V 300A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 71 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 200 A
Current - Reverse Leakage @ Vr: 200 µA @ 170 V
Description: DIODE MOD SCHOT 170V 300A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 71 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 200 A
Current - Reverse Leakage @ Vr: 200 µA @ 170 V
на замовлення 326 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2341.23 грн |
| 10+ | 1658.58 грн |
| 100+ | 1436.54 грн |
















