Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41622) > Сторінка 400 з 694
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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VS-HFA08TA60CS-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 4A TO263ABCurrent - Reverse Leakage @ Vr: 3 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 4A (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 42 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
на замовлення 7765 шт: термін постачання 21-31 дні (днів) |
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VS-HFA08TB120S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 8A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
на замовлення 8749 шт: термін постачання 21-31 дні (днів) |
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VS-HFA15TB60-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 15A TO2203Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 759 шт: термін постачання 21-31 дні (днів) |
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VS-HFA15TB60S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 15A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 3714 шт: термін постачання 21-31 дні (днів) |
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VS-HFA16TA60CS-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 8A TO263ABSupplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 8A (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C |
на замовлення 3856 шт: термін постачання 21-31 дні (днів) |
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VS-HFA16TB120S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 16A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
на замовлення 10399 шт: термін постачання 21-31 дні (днів) |
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VS-HFA25TB60S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 25A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
на замовлення 4969 шт: термін постачання 21-31 дні (днів) |
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VS-HFA30TA60CS-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 15A TO263ABCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 15A (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 60 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
на замовлення 2100 шт: термін постачання 21-31 дні (днів) |
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VS-MURB1020CT-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 5A TO-262AACurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-262AA Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-MURB1520-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 15A TO262AACurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-262AA Current - Average Rectified (Io): 15A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-MURB1520-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 15A TO263ABCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 15A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
на замовлення 4849 шт: термін постачання 21-31 дні (днів) |
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VS-MURB1620CT-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 8A TO-262AACurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-262AA Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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VS-MURB1620CT-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 8A TO263ABCurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
на замовлення 4852 шт: термін постачання 21-31 дні (днів) |
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VS-MURB820-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 8A TO262AACurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-262AA Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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VS-6DKH02-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 3A FLATPAKCurrent - Reverse Leakage @ Vr: 2 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: FlatPAK 5x6 (Dual) Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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VS-8DKH02-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 4A FLATPAKCurrent - Reverse Leakage @ Vr: 2 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: FlatPAK 5x6 (Dual) Current - Average Rectified (Io) (per Diode): 4A Diode Configuration: 2 Independent Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Technology: Standard |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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VS-6DKH02-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 3A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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VS-8DKH02-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 4A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
на замовлення 1364 шт: термін постачання 21-31 дні (днів) |
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| G2SBA60L-5700E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| G2SBA60L-5701E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| G2SBA60L-5701E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| G2SBA60L-5702E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Part Status: Obsolete Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| G2SBA60L-5703E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Part Status: Obsolete Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| G2SBA60L-5704E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Part Status: Obsolete Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| G2SBA60L-5705E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Part Status: Obsolete Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| G2SBA60L-6826E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Part Status: Obsolete Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| G2SBA60L-6847E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Part Status: Obsolete Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| G2SBA60L-6847E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECTIFIER Part Status: Obsolete Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| UHF20FCTL-801E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE RECTIFIER Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| G2SB80-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-GT180DA120U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 1200V 281A SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 281 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1087 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V |
на замовлення 239 шт: термін постачання 21-31 дні (днів) |
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BZG05C10-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 1.25W DO214ACCurrent - Reverse Leakage @ Vr: 500 nA @ 7 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1.25 W Part Status: Active Supplier Device Package: DO-214AC (SMA) Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 10 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±6% Packaging: Cut Tape (CT) |
на замовлення 6598 шт: термін постачання 21-31 дні (днів) |
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BZG05C15-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 1.25W DO214ACCurrent - Reverse Leakage @ Vr: 500 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1.25 W Part Status: Active Supplier Device Package: DO-214AC (SMA) Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±6% Packaging: Cut Tape (CT) |
на замовлення 3004 шт: термін постачання 21-31 дні (днів) |
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BZG05C39-HM3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 1.25W DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZG05C6V2-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 1.25W DO214ACPower - Max: 1.25 W Supplier Device Package: DO-214AC (SMA) Impedance (Max) (Zzt): 4 Ohms Voltage - Zener (Nom) (Vz): 6.2 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±6.45% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA |
на замовлення 11522 шт: термін постачання 21-31 дні (днів) |
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BZG05C91-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 91V 1.25W DO214ACMounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±6.04% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 68 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1.25 W Part Status: Active Supplier Device Package: DO-214AC (SMA) Impedance (Max) (Zzt): 250 Ohms Voltage - Zener (Nom) (Vz): 91 V Operating Temperature: 150°C (TJ) |
на замовлення 6453 шт: термін постачання 21-31 дні (днів) |
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V10DM100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 5A TO263ACCurrent - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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V10DM100CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 5A TO263ACPart Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3342 шт: термін постачання 21-31 дні (днів) |
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V20DM100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 10A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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V20DM100CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 10A TO263ACPart Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 200 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1555 шт: термін постачання 21-31 дні (днів) |
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V2F6HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO219ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 480 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 250pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
на замовлення 10402 шт: термін постачання 21-31 дні (днів) |
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V2FM12HM3/H | Vishay General Semiconductor - Diodes Division |
Description: 2A,120V,SMF,TRENCH SKY RECT. |
на замовлення 8925 шт: термін постачання 21-31 дні (днів) |
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V30DM100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 15A TO263ACOperating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 400 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active |
на замовлення 730 шт: термін постачання 21-31 дні (днів) |
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V30DM100CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 15A TO263ACTechnology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 400 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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V30DM150C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 150V TO263ACCurrent - Reverse Leakage @ Vr: 200 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant Packaging: Cut Tape (CT) |
на замовлення 1978 шт: термін постачання 21-31 дні (днів) |
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V3F6-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO219ABCurrent - Reverse Leakage @ Vr: 600 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 310pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
на замовлення 10732 шт: термін постачання 21-31 дні (днів) |
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V3FM12-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 3A DO219ABSupplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 220pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -40°C ~ 175°C |
на замовлення 9895 шт: термін постачання 21-31 дні (днів) |
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V3FM15-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 3A DO219ABCurrent - Reverse Leakage @ Vr: 85 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 150pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
на замовлення 66800 шт: термін постачання 21-31 дні (днів) |
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V40DM100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 20A TO263ACPackaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 700 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant |
на замовлення 1224 шт: термін постачання 21-31 дні (днів) |
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V40DM100CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 20A TO263ACDiode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 700 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 20A Qualification: AEC-Q101 Grade: Automotive |
на замовлення 736 шт: термін постачання 21-31 дні (днів) |
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V60DM100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 30A TO263ACCurrent - Reverse Leakage @ Vr: 800 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Cut Tape (CT) |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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V60DM100CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 30A TO263ACQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 800 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Cut Tape (CT) |
на замовлення 5135 шт: термін постачання 21-31 дні (днів) |
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VS-10ETF06SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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VS-10ETF12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-10ETS12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-20ETF06SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 20A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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VS-20ETF12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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VS-25ETS12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 25A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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VS-25TTS12SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 25A TO-263AB (D2PAK)Voltage - Off State: 1.2 kV Current - On State (It (RMS)) (Max): 25 A Part Status: Active Supplier Device Package: TO-263AB (D2PAK) Current - Off State (Max): 10 mA Voltage - On State (Vtm) (Max): 1.25 V Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 16 A Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz Current - Gate Trigger (Igt) (Max): 45 mA Current - Hold (Ih) (Max): 150 mA Operating Temperature: -40°C ~ 125°C (TJ) SCR Type: Standard Recovery Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS-25TTS16SLHM3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.6KV 25A TO-263AB (D2PAK)Voltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 25 A Part Status: Active Supplier Device Package: TO-263AB (D2PAK) Current - Off State (Max): 10 mA Voltage - On State (Vtm) (Max): 1.25 V Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 16 A Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz Current - Gate Trigger (Igt) (Max): 45 mA Current - Hold (Ih) (Max): 150 mA Operating Temperature: -40°C ~ 125°C (TJ) SCR Type: Standard Recovery Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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| VS-HFA08TA60CS-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 4A TO263AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 4A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE ARRAY GP 600V 4A TO263AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 4A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 7765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.92 грн |
| 50+ | 22.38 грн |
| 100+ | 22.29 грн |
| 500+ | 20.34 грн |
| 1000+ | 19.49 грн |
| 2000+ | 19.16 грн |
| VS-HFA08TB120S-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE STANDARD 1200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 8749 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 329.12 грн |
| 10+ | 209.51 грн |
| 50+ | 163.24 грн |
| 100+ | 139.21 грн |
| 500+ | 114.71 грн |
| VS-HFA15TB60-1-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 759 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 290.36 грн |
| 10+ | 183.61 грн |
| 50+ | 142.32 грн |
| 100+ | 121.08 грн |
| 500+ | 99.20 грн |
| VS-HFA15TB60S-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3714 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.15 грн |
| 10+ | 184.29 грн |
| 50+ | 142.89 грн |
| 100+ | 121.57 грн |
| 500+ | 99.61 грн |
| VS-HFA16TA60CS-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A TO263AB
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE ARRAY GP 600V 8A TO263AB
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
на замовлення 3856 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.30 грн |
| 50+ | 53.36 грн |
| 100+ | 47.64 грн |
| 500+ | 35.26 грн |
| 1000+ | 32.22 грн |
| 2000+ | 29.67 грн |
| VS-HFA16TB120S-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE STANDARD 1200V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 10399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 558.56 грн |
| 50+ | 290.98 грн |
| 100+ | 267.18 грн |
| 500+ | 211.61 грн |
| 1000+ | 199.06 грн |
| 2000+ | 197.82 грн |
| VS-HFA25TB60S-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 25A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE STANDARD 600V 25A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 4969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 435.14 грн |
| 10+ | 280.67 грн |
| 50+ | 221.26 грн |
| 100+ | 189.71 грн |
| 500+ | 158.30 грн |
| VS-HFA30TA60CS-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 15A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE ARRAY GP 600V 15A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 15A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 426.44 грн |
| 10+ | 274.19 грн |
| 50+ | 215.74 грн |
| 100+ | 184.83 грн |
| 500+ | 168.26 грн |
| VS-MURB1020CT-1-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO-262AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: DIODE ARRAY GP 200V 5A TO-262AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| VS-MURB1520-1-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 15A TO262AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: DIODE STANDARD 200V 15A TO262AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| VS-MURB1520-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 15A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE STANDARD 200V 15A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 4849 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.67 грн |
| 10+ | 118.55 грн |
| 50+ | 90.33 грн |
| 100+ | 76.21 грн |
| 500+ | 61.20 грн |
| VS-MURB1620CT-1-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO-262AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: DIODE ARRAY GP 200V 8A TO-262AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| VS-MURB1620CT-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE ARRAY GP 200V 8A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 4852 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.37 грн |
| 10+ | 123.80 грн |
| 50+ | 94.46 грн |
| 100+ | 79.75 грн |
| 500+ | 64.16 грн |
| VS-MURB820-1-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO262AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: DIODE STANDARD 200V 8A TO262AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| VS-6DKH02-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 3A FLATPAK
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: FlatPAK 5x6 (Dual)
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 200V 3A FLATPAK
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: FlatPAK 5x6 (Dual)
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| VS-8DKH02-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 4A FLATPAK
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: FlatPAK 5x6 (Dual)
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Technology: Standard
Description: DIODE ARRAY GP 200V 4A FLATPAK
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: FlatPAK 5x6 (Dual)
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Technology: Standard
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| VS-6DKH02-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 3A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE ARRAY GP 200V 3A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.68 грн |
| 10+ | 39.31 грн |
| 100+ | 27.21 грн |
| VS-8DKH02-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE ARRAY GP 200V 4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 1364 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.03 грн |
| 10+ | 52.87 грн |
| 100+ | 34.92 грн |
| 500+ | 25.53 грн |
| G2SBA60L-5700E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5701E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5701E3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5702E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5703E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5704E3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-5705E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-6826E3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-6847E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-6847E3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| UHF20FCTL-801E3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: DIODE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| G2SB80-M3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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од. на суму грн.
| VS-GT180DA120U |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 281A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 281 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Description: IGBT MODULE 1200V 281A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 281 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3432.86 грн |
| 10+ | 2492.96 грн |
| 100+ | 2201.27 грн |
| BZG05C10-M3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 10V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
на замовлення 6598 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.27 грн |
| 17+ | 18.44 грн |
| 100+ | 9.52 грн |
| 500+ | 8.01 грн |
| BZG05C15-M3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 15V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
на замовлення 3004 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.27 грн |
| 16+ | 19.05 грн |
| 100+ | 12.94 грн |
| 500+ | 9.40 грн |
| BZG05C39-HM3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.25W DO214AC
Description: DIODE ZENER 39V 1.25W DO214AC
товару немає в наявності
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| BZG05C6V2-M3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 1.25W DO214AC
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.45%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Description: DIODE ZENER 6.2V 1.25W DO214AC
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.45%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
на замовлення 11522 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.48 грн |
| 16+ | 19.43 грн |
| 100+ | 11.67 грн |
| 500+ | 9.14 грн |
| BZG05C91-M3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Description: DIODE ZENER 91V 1.25W DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
на замовлення 6453 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.27 грн |
| 16+ | 19.05 грн |
| 100+ | 12.94 грн |
| 500+ | 9.74 грн |
| V10DM100C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AC
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 100V 5A TO263AC
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| V10DM100CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AC
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOTT 100V 5A TO263AC
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3342 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.59 грн |
| 10+ | 77.18 грн |
| 100+ | 51.61 грн |
| 500+ | 38.16 грн |
| 1000+ | 34.85 грн |
| V20DM100C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Description: DIODE ARR SCHOT 100V 10A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| V20DM100CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AC
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOT 100V 10A TO263AC
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1555 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.59 грн |
| 10+ | 85.33 грн |
| 100+ | 61.79 грн |
| 500+ | 46.02 грн |
| 1000+ | 42.17 грн |
| V2F6HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 480 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 2A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 480 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 10402 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.90 грн |
| 18+ | 17.29 грн |
| 100+ | 10.80 грн |
| 500+ | 9.30 грн |
| 1000+ | 8.74 грн |
| V2FM12HM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 2A,120V,SMF,TRENCH SKY RECT.
Description: 2A,120V,SMF,TRENCH SKY RECT.
на замовлення 8925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.23 грн |
| 13+ | 23.85 грн |
| 100+ | 14.86 грн |
| 500+ | 9.54 грн |
| 1000+ | 7.34 грн |
| V30DM100C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AC
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Description: DIODE ARR SCHOT 100V 15A TO263AC
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.57 грн |
| 10+ | 83.88 грн |
| 100+ | 66.56 грн |
| 500+ | 49.91 грн |
| V30DM100CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AC
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOT 100V 15A TO263AC
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.67 грн |
| 10+ | 94.09 грн |
| 100+ | 51.57 грн |
| 500+ | 47.19 грн |
| 1000+ | 46.81 грн |
| V30DM150C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 150V TO263AC
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 150V TO263AC
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.84 грн |
| 10+ | 104.83 грн |
| 100+ | 81.72 грн |
| 500+ | 63.36 грн |
| 1000+ | 51.91 грн |
| V3F6-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO219AB
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 310pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 3A DO219AB
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 310pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 10732 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.78 грн |
| 24+ | 12.80 грн |
| 100+ | 9.06 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.60 грн |
| V3FM12-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 3A DO219AB
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 175°C
Description: DIODE SCHOTTKY 120V 3A DO219AB
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 175°C
на замовлення 9895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.78 грн |
| 24+ | 12.80 грн |
| 100+ | 9.06 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.60 грн |
| V3FM15-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3A DO219AB
Current - Reverse Leakage @ Vr: 85 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 150V 3A DO219AB
Current - Reverse Leakage @ Vr: 85 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 66800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.23 грн |
| 16+ | 19.73 грн |
| 50+ | 14.23 грн |
| 100+ | 11.68 грн |
| 500+ | 8.74 грн |
| V40DM100C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Description: DIODE ARR SCHOT 100V 20A TO263AC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
на замовлення 1224 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.98 грн |
| 10+ | 106.51 грн |
| 100+ | 84.28 грн |
| 500+ | 63.58 грн |
| 1000+ | 58.59 грн |
| V40DM100CHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AC
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 20A
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOT 100V 20A TO263AC
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 20A
Qualification: AEC-Q101
Grade: Automotive
на замовлення 736 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.03 грн |
| 10+ | 132.26 грн |
| 100+ | 91.01 грн |
| 500+ | 68.87 грн |
| V60DM100C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO263AC
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOT 100V 30A TO263AC
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 178.01 грн |
| 10+ | 115.96 грн |
| V60DM100CHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO263AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOT 100V 30A TO263AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
на замовлення 5135 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.07 грн |
| 10+ | 99.96 грн |
| 100+ | 95.67 грн |
| 500+ | 75.64 грн |
| 1000+ | 69.92 грн |
| VS-10ETF06SLHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| VS-10ETF12SLHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 65.16 грн |
| VS-10ETS12SLHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 58.82 грн |
| VS-20ETF06SLHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 102.72 грн |
| 1600+ | 97.93 грн |
| VS-20ETF12SLHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 101.66 грн |
| VS-25ETS12SLHM3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| VS-25TTS12SLHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 25A TO-263AB (D2PAK)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: SCR 1.2KV 25A TO-263AB (D2PAK)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 144.91 грн |
| VS-25TTS16SLHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 25A TO-263AB (D2PAK)
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: SCR 1.6KV 25A TO-263AB (D2PAK)
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 144.74 грн |
| 1600+ | 131.45 грн |
















