Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40147) > Сторінка 624 з 670
Фото | Назва | Виробник | Інформація |
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UGB18DCT-E3/45 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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UGB18DCTHE3_A/P | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
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5KP26AHE3_A/C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 119A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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V15K170C-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 50 µA @ 170 V Qualification: AEC-Q101 |
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V15K170C-M3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 50 µA @ 170 V Qualification: AEC-Q101 |
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VS-20BQ030HM3/5BT | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V Qualification: AEC-Q101 |
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VS-20BQ030HM3/5BT | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 1661 шт: термін постачання 21-31 дні (днів) |
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VSSAF5L63-M3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 780pF @ 4V, 1MHz Current - Average Rectified (Io): 2.6A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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VSSAF5L63-M3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 780pF @ 4V, 1MHz Current - Average Rectified (Io): 2.6A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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VSSAF5L63HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 780pF @ 4V, 1MHz Current - Average Rectified (Io): 2.6A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6650 шт: термін постачання 21-31 дні (днів) |
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VSSAF5L63HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 780pF @ 4V, 1MHz Current - Average Rectified (Io): 2.6A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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V12PL63HM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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V12PL63HM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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V12PL63-M3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V |
на замовлення 1498 шт: термін постачання 21-31 дні (днів) |
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V12PL63-M3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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V12PL63HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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V12PL63HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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V12PL63-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V |
на замовлення 6490 шт: термін постачання 21-31 дні (днів) |
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V12PL63-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ030-N4 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ100HN4 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A Current - Reverse Leakage @ Vr: 300 µA @ 100 V Capacitance @ Vr, F: 1320pF @ 5V, 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ045-N4 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2700pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ045HN4 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2700pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ015HN4 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A Current - Reverse Leakage @ Vr: 20 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ030HN4 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ100-N4 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A Current - Reverse Leakage @ Vr: 300 µA @ 100 V Capacitance @ Vr, F: 1320pF @ 5V, 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ015-N4 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A Current - Reverse Leakage @ Vr: 20 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B12-HE3_A-18 | Vishay General Semiconductor - Diodes Division |
![]() Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 300 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B12-HE3_A-08 | Vishay General Semiconductor - Diodes Division |
![]() Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 300 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VB10150S-E3/8W | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 150 V |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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VB10150S-E3/8W | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 150 V |
на замовлення 10579 шт: термін постачання 21-31 дні (днів) |
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VF60120C-M3/4W | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
на замовлення 830 шт: термін постачання 21-31 дні (днів) |
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VS-VSKJ71/10 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 10 mA @ 1000 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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SE50PAJHM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 1.6A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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SE50PAJHM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 1.6A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 6190 шт: термін постачання 21-31 дні (днів) |
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SE50PAGHM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SE50PAGHM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 12550 шт: термін постачання 21-31 дні (днів) |
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SE50PADHM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SE50PADHM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 12700 шт: термін постачання 21-31 дні (днів) |
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GBPC15005-E4/51 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 182 шт: термін постачання 21-31 дні (днів) |
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GBPC15005W-E4/51 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PLZ4V3A-HG3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±3% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.17 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DO-219AC (microSMF) Grade: Automotive Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PLZ4V3A-HG3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±3% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.17 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DO-219AC (microSMF) Grade: Automotive Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ17AHM3_B/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 21.7A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ17AHE3_B/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 21.7A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ17AHM3_B/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 21.7A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ17AHE3_B/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 21.7A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V12PM15HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 860pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A Current - Reverse Leakage @ Vr: 250 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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V12PM15HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 860pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A Current - Reverse Leakage @ Vr: 250 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 5818 шт: термін постачання 21-31 дні (днів) |
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V8PM153-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 470pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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V8PM153-M3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 470pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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V8PM153HM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 470pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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V12PM153-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 820pF @ 4V, 1MHz Current - Average Rectified (Io): 3.7A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A Current - Reverse Leakage @ Vr: 150 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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V8PM153HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 470pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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V15PM153-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 885pF @ 4V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A Current - Reverse Leakage @ Vr: 150 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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V12PM153HM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 820pF @ 4V, 1MHz Current - Average Rectified (Io): 3.7A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A Current - Reverse Leakage @ Vr: 150 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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V15PM153HM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 885pF @ 4V, 1MHz Current - Average Rectified (Io): 3.8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA Current - Reverse Leakage @ Vr: 150 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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V12PM153HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 820pF @ 4V, 1MHz Current - Average Rectified (Io): 3.7A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A Current - Reverse Leakage @ Vr: 150 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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V12PM153HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 820pF @ 4V, 1MHz Current - Average Rectified (Io): 3.7A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A Current - Reverse Leakage @ Vr: 150 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 2951 шт: термін постачання 21-31 дні (днів) |
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V15PM153HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 885pF @ 4V, 1MHz Current - Average Rectified (Io): 3.8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA Current - Reverse Leakage @ Vr: 150 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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UGB18DCT-E3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
UGB18DCTHE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
5KP26AHE3_A/C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
V15K170C-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 170V 3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 170 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 170V 3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 170 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
V15K170C-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 170V 3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 170 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 170V 3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 170 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
VS-20BQ030HM3/5BT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
VS-20BQ030HM3/5BT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
на замовлення 1661 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.63 грн |
11+ | 28.21 грн |
100+ | 18.06 грн |
500+ | 12.83 грн |
1000+ | 11.50 грн |
VSSAF5L63-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 37.31 грн |
12+ | 27.45 грн |
100+ | 16.48 грн |
500+ | 14.32 грн |
1000+ | 9.74 грн |
VSSAF5L63-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3500+ | 9.92 грн |
7000+ | 9.15 грн |
VSSAF5L63HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6650 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.90 грн |
10+ | 31.34 грн |
100+ | 21.83 грн |
500+ | 16.00 грн |
1000+ | 13.01 грн |
VSSAF5L63HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3500+ | 13.54 грн |
V12PL63HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 60.34 грн |
10+ | 47.70 грн |
100+ | 37.08 грн |
500+ | 29.50 грн |
1000+ | 24.03 грн |
2000+ | 22.62 грн |
V12PL63HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Bulk
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Bulk
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6500+ | 23.84 грн |
V12PL63-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
на замовлення 1498 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 57.95 грн |
10+ | 48.16 грн |
100+ | 33.37 грн |
500+ | 26.17 грн |
V12PL63-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Bulk
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Bulk
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 24.65 грн |
V12PL63HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 60.34 грн |
10+ | 47.70 грн |
100+ | 37.08 грн |
500+ | 29.50 грн |
V12PL63HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Bulk
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Bulk
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 26.59 грн |
3000+ | 24.10 грн |
V12PL63-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
на замовлення 6490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 57.95 грн |
10+ | 48.16 грн |
100+ | 33.37 грн |
500+ | 26.17 грн |
1000+ | 22.27 грн |
2000+ | 19.84 грн |
V12PL63-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Bulk
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Description: 12A, 60V, SMPC TRENCH SKY RECT.
Packaging: Bulk
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
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VS-100BGQ030-N4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
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VS-100BGQ100HN4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Capacitance @ Vr, F: 1320pF @ 5V, 1MHz
Description: DIODE SCHOTTK 100V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Capacitance @ Vr, F: 1320pF @ 5V, 1MHz
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VS-100BGQ045-N4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE SCHOTTKY 45V 100A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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VS-100BGQ045HN4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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VS-100BGQ015HN4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
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VS-100BGQ030HN4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
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VS-100BGQ100-N4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 100A POWERTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Capacitance @ Vr, F: 1320pF @ 5V, 1MHz
Description: DIODE SCHOTTK 100V 100A POWERTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Capacitance @ Vr, F: 1320pF @ 5V, 1MHz
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VS-100BGQ015-N4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCHOTTKY RECT 15V 100A POWLRTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
Description: SCHOTTKY RECT 15V 100A POWLRTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
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BZX84B12-HE3_A-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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BZX84B12-HE3_A-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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VB10150S-E3/8W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 37.69 грн |
1600+ | 35.68 грн |
2400+ | 34.64 грн |
4000+ | 31.99 грн |
5600+ | 31.04 грн |
VB10150S-E3/8W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
на замовлення 10579 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 108.76 грн |
10+ | 71.79 грн |
100+ | 55.99 грн |
VF60120C-M3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE ARR SCHOTT 120V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
на замовлення 830 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 165.92 грн |
50+ | 128.74 грн |
100+ | 105.92 грн |
500+ | 84.11 грн |
VS-VSKJ71/10 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 1000V 40A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Description: DIODE MOD GP 1000V 40A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2617.46 грн |
10+ | 1873.69 грн |
SE50PAJHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.6A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 1.6A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3500+ | 12.63 грн |
SE50PAJHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.6A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 1.6A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 6190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 45.25 грн |
11+ | 29.05 грн |
100+ | 19.78 грн |
500+ | 14.61 грн |
1000+ | 13.30 грн |
SE50PAGHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 5A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 5A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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SE50PAGHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 5A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 5A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 12550 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.28 грн |
12+ | 26.37 грн |
100+ | 17.94 грн |
500+ | 13.21 грн |
1000+ | 12.01 грн |
2000+ | 10.99 грн |
5000+ | 9.70 грн |
SE50PADHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 5A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 5A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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SE50PADHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 5A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 5A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 12700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.28 грн |
12+ | 26.37 грн |
100+ | 17.94 грн |
500+ | 13.21 грн |
1000+ | 12.01 грн |
2000+ | 10.99 грн |
5000+ | 9.70 грн |
GBPC15005-E4/51 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 182 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 387.42 грн |
10+ | 261.30 грн |
100+ | 194.65 грн |
GBPC15005W-E4/51 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 50V 15A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1P 50V 15A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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PLZ4V3A-HG3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.17V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.17 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 4.17V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.17 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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PLZ4V3A-HG3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.17V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.17 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 4.17V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.17 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
на замовлення 9 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SMBJ17AHM3_B/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,17V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 600W,17V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ17AHE3_B/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,17V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 600W,17V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ17AHM3_B/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,17V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 600W,17V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ17AHE3_B/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,17V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 600W,17V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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V12PM15HM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 23.33 грн |
3000+ | 20.86 грн |
V12PM15HM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Qualification: AEC-Q101
на замовлення 5818 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 68.27 грн |
10+ | 45.41 грн |
100+ | 36.87 грн |
500+ | 27.52 грн |
V8PM153-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6500+ | 12.44 грн |
V8PM153-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 14.66 грн |
3000+ | 12.62 грн |
V8PM153HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6500+ | 15.99 грн |
V12PM153-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3.7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3.7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6500+ | 16.99 грн |
V8PM153HM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 18.95 грн |
3000+ | 16.26 грн |
V15PM153-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6500+ | 18.81 грн |
V12PM153HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3.7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3.7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6500+ | 21.99 грн |
V15PM153HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3.8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3.8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6500+ | 23.22 грн |
V12PM153HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3.7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3.7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 26.06 грн |
V12PM153HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3.7A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3.7A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 2951 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.13 грн |
10+ | 50.99 грн |
100+ | 35.30 грн |
500+ | 27.67 грн |
V15PM153HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3.8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3.8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 27.18 грн |