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SMA6F30A-M3/H SMA6F30A-M3/H Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: 600W,30V 5%,UNIDIR,SLIM SMA TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
3500+6.76 грн
7000+6.24 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
SMA6F30A-M3/H SMA6F30A-M3/H Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: 600W,30V 5%,UNIDIR,SLIM SMA TVS
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 9323 шт:
термін постачання 21-31 дні (днів)
13+24.61 грн
17+18.73 грн
100+11.23 грн
500+9.76 грн
1000+6.64 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
6DFN30A-M3/I 6DFN30A-M3/I Vishay General Semiconductor - Diodes Division 6dfn12athru6dfn51a.pdf Description: 600W,30V 5%, DFN3820A TVS
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.5A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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6DFN30A-M3/I 6DFN30A-M3/I Vishay General Semiconductor - Diodes Division 6dfn12athru6dfn51a.pdf Description: 600W,30V 5%, DFN3820A TVS
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.5A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 13993 шт:
термін постачання 21-31 дні (днів)
12+28.58 грн
15+21.33 грн
100+12.77 грн
500+11.09 грн
1000+7.54 грн
2000+6.94 грн
5000+6.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMP30A-M3/85A SMP30A-M3/85A Vishay General Semiconductor - Diodes Division smp3v3.pdf Description: TVS DIODE 30VWM 48.4VC DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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SMP30A-M3/85A SMP30A-M3/85A Vishay General Semiconductor - Diodes Division smp3v3.pdf Description: TVS DIODE 30VWM 48.4VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 9521 шт:
термін постачання 21-31 дні (днів)
14+23.02 грн
20+15.29 грн
100+6.38 грн
500+5.64 грн
1000+5.30 грн
2000+5.20 грн
5000+5.01 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMCJ51AHM3_A/I SMCJ51AHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMCJ54AHE3_A/H SMCJ54AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
850+20.36 грн
1700+18.69 грн
Мінімальне замовлення: 850
В кошику  од. на суму  грн.
SMCJ54AHE3_A/H SMCJ54AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3320 шт:
термін постачання 21-31 дні (днів)
6+58.75 грн
10+45.18 грн
100+31.24 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TZMB62-GS08 TZMB62-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 62V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+3.72 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TZMB62-GS08 TZMB62-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 62V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Qualification: AEC-Q101
на замовлення 9810 шт:
термін постачання 21-31 дні (днів)
15+22.23 грн
21+14.60 грн
100+7.13 грн
500+5.58 грн
1000+3.88 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
VS-40CTQ045STRL-M3 VS-40CTQ045STRL-M3 Vishay General Semiconductor - Diodes Division vs-40ctq045s-m3.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+72.67 грн
1600+64.95 грн
2400+62.39 грн
4000+58.02 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
VS-40CTQ045STRL-M3 VS-40CTQ045STRL-M3 Vishay General Semiconductor - Diodes Division vs-40ctq045s-m3.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 6696 шт:
термін постачання 21-31 дні (днів)
2+212.76 грн
10+132.64 грн
100+91.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SMCJ54AHM3_A/I SMCJ54AHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE13CAHE3_B/C 1.5KE13CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,13V 5%,BIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MMBD6050-HE3-08 MMBD6050-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.82 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMBD6050-HE3-08 MMBD6050-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
23+14.29 грн
37+8.33 грн
100+5.15 грн
500+3.52 грн
1000+3.09 грн
Мінімальне замовлення: 23
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5KP130AHE3_A/C 5KP130AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE 130VWM 209VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ15CAHM3_A/H SMCJ15CAHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ15CAHM3_A/I SMCJ15CAHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C3V9-HE3_A-18 BZT52C3V9-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 3.9V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
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BZT52C3V9-HE3_A-08 BZT52C3V9-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 3.9V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
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SMAJ54CAHM3/I SMAJ54CAHM3/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ26CAHE3_A/I SMAJ26CAHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 26VWM 42.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+8.99 грн
Мінімальне замовлення: 7500
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V2NM103HM3/I V2NM103HM3/I Vishay General Semiconductor - Diodes Division v2nm103.pdf Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
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V2NM103HM3/I V2NM103HM3/I Vishay General Semiconductor - Diodes Division v2nm103.pdf Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13470 шт:
термін постачання 21-31 дні (днів)
11+30.96 грн
16+19.88 грн
100+15.79 грн
500+11.17 грн
1000+8.82 грн
2000+8.53 грн
5000+7.80 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
V2NM103-M3/I V2NM103-M3/I Vishay General Semiconductor - Diodes Division v2nm103.pdf Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
V2NM103-M3/I V2NM103-M3/I Vishay General Semiconductor - Diodes Division v2nm103.pdf Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13610 шт:
термін постачання 21-31 дні (днів)
12+27.79 грн
17+18.19 грн
100+13.17 грн
500+10.12 грн
1000+8.05 грн
2000+7.93 грн
5000+7.09 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
V3NM103HM3/I V3NM103HM3/I Vishay General Semiconductor - Diodes Division v3nm103.pdf Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
V3NM103HM3/I V3NM103HM3/I Vishay General Semiconductor - Diodes Division v3nm103.pdf Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
на замовлення 12817 шт:
термін постачання 21-31 дні (днів)
11+30.96 грн
13+23.55 грн
100+18.65 грн
500+13.27 грн
1000+10.36 грн
2000+10.05 грн
5000+9.35 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
V5NM103-M3/I V5NM103-M3/I Vishay General Semiconductor - Diodes Division v5nm103.pdf Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
V5NM103-M3/I V5NM103-M3/I Vishay General Semiconductor - Diodes Division v5nm103.pdf Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 11893 шт:
термін постачання 21-31 дні (днів)
10+33.34 грн
13+25.15 грн
100+19.87 грн
500+14.17 грн
1000+11.20 грн
2000+10.85 грн
5000+10.03 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
V3NM103-M3/I V3NM103-M3/I Vishay General Semiconductor - Diodes Division v3nm103.pdf Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
V3NM103-M3/I V3NM103-M3/I Vishay General Semiconductor - Diodes Division v3nm103.pdf Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13481 шт:
термін постачання 21-31 дні (днів)
10+33.34 грн
15+21.56 грн
100+17.08 грн
500+12.11 грн
1000+9.59 грн
2000+9.29 грн
5000+8.49 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
V5NM103HM3/I V5NM103HM3/I Vishay General Semiconductor - Diodes Division v5nm103.pdf Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
V5NM103HM3/I V5NM103HM3/I Vishay General Semiconductor - Diodes Division v5nm103.pdf Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13790 шт:
термін постачання 21-31 дні (днів)
9+38.90 грн
12+27.45 грн
100+21.67 грн
500+15.51 грн
1000+12.39 грн
2000+12.00 грн
5000+11.03 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SE30DT12-M3/I SE30DT12-M3/I Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
SE30DT12-M3/I SE30DT12-M3/I Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 866 шт:
термін постачання 21-31 дні (днів)
2+172.27 грн
10+112.99 грн
100+80.88 грн
500+62.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SE30DT12HM3/I SE30DT12HM3/I Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SE30DT12HM3/I SE30DT12HM3/I Vishay General Semiconductor - Diodes Division se30dt12.pdf Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
2+164.34 грн
10+131.42 грн
100+104.59 грн
500+83.05 грн
1000+70.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BYWB29-150HE3_A/P BYWB29-150HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
BYWB29-50HE3_A/P BYWB29-50HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BYWF29-100HE3_A/P BYWF29-100HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 100V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BYWF29-150HE3_A/P BYWF29-150HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 150V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
BYWF29-200HE3_A/P BYWF29-200HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BYWF29-50HE3_A/P BYWF29-50HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 50V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BYWB29-150HE3_A/I BYWB29-150HE3_A/I Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
BYWB29-50HE3_A/I BYWB29-50HE3_A/I Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MMSZ5244B-E3-18 MMSZ5244B-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.49 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
MMSZ5244B-E3-18 MMSZ5244B-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
16+19.85 грн
25+12.69 грн
100+6.22 грн
500+4.86 грн
1000+3.38 грн
2000+2.93 грн
5000+2.67 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MMSZ5244B-HE3-18 MMSZ5244B-HE3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
MMSZ5244B-HE3-18 MMSZ5244B-HE3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
на замовлення 6081 шт:
термін постачання 21-31 дні (днів)
16+20.64 грн
23+13.38 грн
100+6.52 грн
500+5.10 грн
1000+3.55 грн
2000+3.07 грн
5000+2.80 грн
Мінімальне замовлення: 16
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MMSZ5244B-HE3_A-18 MMSZ5244B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
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MMSZ5244B-HE3_A-08 MMSZ5244B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 14V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
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1N5253B-TAP 1N5253B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 25V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 9659 шт:
термін постачання 21-31 дні (днів)
34+9.53 грн
49+6.27 грн
114+2.68 грн
500+2.41 грн
1000+2.32 грн
2000+2.28 грн
5000+1.92 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
1N5253B-TAP 1N5253B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 25V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+2.43 грн
20000+2.12 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SMAJ75AHM3_A/H SMAJ75AHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ75AHM3_A/I SMAJ75AHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ75AHM3/H SMAJ75AHM3/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ75AHM3/I SMAJ75AHM3/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMA6F30A-M3/H sma6f5.pdf
SMA6F30A-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,30V 5%,UNIDIR,SLIM SMA TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3500+6.76 грн
7000+6.24 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
SMA6F30A-M3/H sma6f5.pdf
SMA6F30A-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,30V 5%,UNIDIR,SLIM SMA TVS
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 9323 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+24.61 грн
17+18.73 грн
100+11.23 грн
500+9.76 грн
1000+6.64 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
6DFN30A-M3/I 6dfn12athru6dfn51a.pdf
6DFN30A-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,30V 5%, DFN3820A TVS
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.5A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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6DFN30A-M3/I 6dfn12athru6dfn51a.pdf
6DFN30A-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,30V 5%, DFN3820A TVS
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.5A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 13993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+28.58 грн
15+21.33 грн
100+12.77 грн
500+11.09 грн
1000+7.54 грн
2000+6.94 грн
5000+6.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMP30A-M3/85A smp3v3.pdf
SMP30A-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMP30A-M3/85A smp3v3.pdf
SMP30A-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 9521 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.02 грн
20+15.29 грн
100+6.38 грн
500+5.64 грн
1000+5.30 грн
2000+5.20 грн
5000+5.01 грн
Мінімальне замовлення: 14
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SMCJ51AHM3_A/I smcj.pdf
SMCJ51AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.2A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ54AHE3_A/H smcj.pdf
SMCJ54AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
850+20.36 грн
1700+18.69 грн
Мінімальне замовлення: 850
В кошику  од. на суму  грн.
SMCJ54AHE3_A/H smcj.pdf
SMCJ54AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+58.75 грн
10+45.18 грн
100+31.24 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TZMB62-GS08 tzm.pdf
TZMB62-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+3.72 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TZMB62-GS08 tzm.pdf
TZMB62-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Qualification: AEC-Q101
на замовлення 9810 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+22.23 грн
21+14.60 грн
100+7.13 грн
500+5.58 грн
1000+3.88 грн
Мінімальне замовлення: 15
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VS-40CTQ045STRL-M3 vs-40ctq045s-m3.pdf
VS-40CTQ045STRL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+72.67 грн
1600+64.95 грн
2400+62.39 грн
4000+58.02 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
VS-40CTQ045STRL-M3 vs-40ctq045s-m3.pdf
VS-40CTQ045STRL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 6696 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+212.76 грн
10+132.64 грн
100+91.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SMCJ54AHM3_A/I smcj.pdf
SMCJ54AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE13CAHE3_B/C 15ke.pdf
1.5KE13CAHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,13V 5%,BIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MMBD6050-HE3-08
MMBD6050-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.82 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMBD6050-HE3-08
MMBD6050-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.29 грн
37+8.33 грн
100+5.15 грн
500+3.52 грн
1000+3.09 грн
Мінімальне замовлення: 23
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5KP130AHE3_A/C 5kp8_5a.pdf
5KP130AHE3_A/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 130VWM 209VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ15CAHM3_A/H smcj.pdf
SMCJ15CAHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ15CAHM3_A/I smcj.pdf
SMCJ15CAHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C3V9-HE3_A-18 bzt52.pdf
BZT52C3V9-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
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BZT52C3V9-HE3_A-08 bzt52.pdf
BZT52C3V9-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
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SMAJ54CAHM3/I smaj50a.pdf
SMAJ54CAHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ26CAHE3_A/I smaj50a.pdf
SMAJ26CAHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 42.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+8.99 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
V2NM103HM3/I v2nm103.pdf
V2NM103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
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V2NM103HM3/I v2nm103.pdf
V2NM103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.96 грн
16+19.88 грн
100+15.79 грн
500+11.17 грн
1000+8.82 грн
2000+8.53 грн
5000+7.80 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
V2NM103-M3/I v2nm103.pdf
V2NM103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
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V2NM103-M3/I v2nm103.pdf
V2NM103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13610 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.79 грн
17+18.19 грн
100+13.17 грн
500+10.12 грн
1000+8.05 грн
2000+7.93 грн
5000+7.09 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
V3NM103HM3/I v3nm103.pdf
V3NM103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
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V3NM103HM3/I v3nm103.pdf
V3NM103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
на замовлення 12817 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.96 грн
13+23.55 грн
100+18.65 грн
500+13.27 грн
1000+10.36 грн
2000+10.05 грн
5000+9.35 грн
Мінімальне замовлення: 11
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V5NM103-M3/I v5nm103.pdf
V5NM103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
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V5NM103-M3/I v5nm103.pdf
V5NM103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 11893 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.34 грн
13+25.15 грн
100+19.87 грн
500+14.17 грн
1000+11.20 грн
2000+10.85 грн
5000+10.03 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
V3NM103-M3/I v3nm103.pdf
V3NM103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
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V3NM103-M3/I v3nm103.pdf
V3NM103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13481 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.34 грн
15+21.56 грн
100+17.08 грн
500+12.11 грн
1000+9.59 грн
2000+9.29 грн
5000+8.49 грн
Мінімальне замовлення: 10
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V5NM103HM3/I v5nm103.pdf
V5NM103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
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V5NM103HM3/I v5nm103.pdf
V5NM103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.90 грн
12+27.45 грн
100+21.67 грн
500+15.51 грн
1000+12.39 грн
2000+12.00 грн
5000+11.03 грн
Мінімальне замовлення: 9
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SE30DT12-M3/I se30dt12.pdf
SE30DT12-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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SE30DT12-M3/I se30dt12.pdf
SE30DT12-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 866 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+172.27 грн
10+112.99 грн
100+80.88 грн
500+62.58 грн
Мінімальне замовлення: 2
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SE30DT12HM3/I se30dt12.pdf
SE30DT12HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
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SE30DT12HM3/I se30dt12.pdf
SE30DT12HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+164.34 грн
10+131.42 грн
100+104.59 грн
500+83.05 грн
1000+70.47 грн
Мінімальне замовлення: 2
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BYWB29-150HE3_A/P byw29200.pdf
BYWB29-150HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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BYWB29-50HE3_A/P byw29200.pdf
BYWB29-50HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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BYWF29-100HE3_A/P byw29200.pdf
BYWF29-100HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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BYWF29-150HE3_A/P byw29200.pdf
BYWF29-150HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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BYWF29-200HE3_A/P byw29200.pdf
BYWF29-200HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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BYWF29-50HE3_A/P byw29200.pdf
BYWF29-50HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
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BYWB29-150HE3_A/I byw29200.pdf
BYWB29-150HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
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BYWB29-50HE3_A/I byw29200.pdf
BYWB29-50HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MMSZ5244B-E3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.49 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
MMSZ5244B-E3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+19.85 грн
25+12.69 грн
100+6.22 грн
500+4.86 грн
1000+3.38 грн
2000+2.93 грн
5000+2.67 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MMSZ5244B-HE3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
товару немає в наявності
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MMSZ5244B-HE3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
на замовлення 6081 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+20.64 грн
23+13.38 грн
100+6.52 грн
500+5.10 грн
1000+3.55 грн
2000+3.07 грн
5000+2.80 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MMSZ5244B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
товару немає в наявності
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MMSZ5244B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5244B-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
товару немає в наявності
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1N5253B-TAP 1n5221.pdf
1N5253B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 25V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 9659 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+9.53 грн
49+6.27 грн
114+2.68 грн
500+2.41 грн
1000+2.32 грн
2000+2.28 грн
5000+1.92 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
1N5253B-TAP 1n5221.pdf
1N5253B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 25V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.43 грн
20000+2.12 грн
Мінімальне замовлення: 10000
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SMAJ75AHM3_A/H smaj50a.pdf
SMAJ75AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ75AHM3_A/I smaj50a.pdf
SMAJ75AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMAJ75AHM3/H smaj50a.pdf
SMAJ75AHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMAJ75AHM3/I smaj50a.pdf
SMAJ75AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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