Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41090) > Сторінка 626 з 685
| Фото | Назва | Виробник | Інформація |
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VTVS25ASMF-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 25.2VWM 42VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 433pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.07A Voltage - Reverse Standoff (Typ): 25.2V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 42V Power - Peak Pulse: 400W Power Line Protection: No |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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VTVS25ASMF-M3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 25.2VWM 42VC DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 433pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.07A Voltage - Reverse Standoff (Typ): 25.2V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 42V Power - Peak Pulse: 400W Power Line Protection: No |
на замовлення 18373 шт: термін постачання 21-31 дні (днів) |
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VS-25CTQ040-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 40V 30A TO2203Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 30 A Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V |
на замовлення 7987 шт: термін постачання 21-31 дні (днів) |
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| BZT52A15-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER SOD124 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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VS-80EBU04HN4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 80A POWERTABPackaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87 ns Technology: Standard Current - Average Rectified (Io): 80A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-80EBU04-N4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 80A POWERTABPackaging: Bulk Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87 ns Technology: Standard Current - Average Rectified (Io): 80A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZD27C9V1P-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 800MW DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-219AB (SMF) Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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BZD27C9V1P-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 800MW DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-219AB (SMF) Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5 V |
на замовлення 28110 шт: термін постачання 21-31 дні (днів) |
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BZD17C5V6P-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 800MW DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: DO-219AB (SMF) Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 2 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BZD17C5V6P-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 800MW DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: DO-219AB (SMF) Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 2 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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VSSAF515-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 5A DO221ACPackaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 280pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 150 V |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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VSSAF515-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 5A DO221ACPackaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 280pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VSSAF515-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 5A DO221ACPackaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 280pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX384C9V1-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 200MW SOD323Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 500 nA @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX384C9V1-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 200MW SOD323Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 500 nA @ 6 V |
на замовлення 10434 шт: термін постачання 21-31 дні (днів) |
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BZX384C6V2-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 200MW SOD323Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BZX384C6V2-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 200MW SOD323Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V |
на замовлення 14880 шт: термін постачання 21-31 дні (днів) |
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BZX384C6V2-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 200MW SOD323Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX384C6V2-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 200MW SOD323Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q101 |
на замовлення 8600 шт: термін постачання 21-31 дні (днів) |
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BZX384C6V2-HG3-18 | Vishay General Semiconductor - Diodes Division |
Description: ZENER DIODE SOD323Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX384C6V2-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: ZENER DIODE SOD323Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5239B-HE3_A-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5239B-HE3_A-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ20AHE3_B/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20VWM 32.4VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 18.5A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ20AHM3_B/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20VWM 32.4VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 18.5A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ20AHM3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20VWM 32.4VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 18.5A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ20AHE3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20VWM 32.4VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 18.5A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZX7V5X-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Qualification: AEC-Q101 |
на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
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TZX7V5X-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TZX7V5A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Qualification: AEC-Q101 |
на замовлення 9800 шт: термін постачання 21-31 дні (днів) |
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TZX7V5A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TZX7V5D-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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TZX7V5D-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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TZX7V5C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TZX7V5C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V Qualification: AEC-Q101 |
на замовлення 29849 шт: термін постачання 21-31 дні (днів) |
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UGB18DCTHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 18A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UGB18DCT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 18A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UGB18DCTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 18A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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5KP26AHE3_A/C | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODEPackaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 119A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V15K170C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 170V 3A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 50 µA @ 170 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V15K170C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 170V 3A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 50 µA @ 170 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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VS-20BQ030HM3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-20BQ030HM3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 1661 шт: термін постачання 21-31 дні (днів) |
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VSSAF5L63-M3/H | Vishay General Semiconductor - Diodes Division |
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 780pF @ 4V, 1MHz Current - Average Rectified (Io): 2.6A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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VSSAF5L63-M3/H | Vishay General Semiconductor - Diodes Division |
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 780pF @ 4V, 1MHz Current - Average Rectified (Io): 2.6A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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VSSAF5L63HM3/H | Vishay General Semiconductor - Diodes Division |
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 780pF @ 4V, 1MHz Current - Average Rectified (Io): 2.6A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6650 шт: термін постачання 21-31 дні (днів) |
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VSSAF5L63HM3/H | Vishay General Semiconductor - Diodes Division |
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 780pF @ 4V, 1MHz Current - Average Rectified (Io): 2.6A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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V12PL63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 12A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6489 шт: термін постачання 21-31 дні (днів) |
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V12PL63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 12A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V12PL63-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 12A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V |
на замовлення 2773 шт: термін постачання 21-31 дні (днів) |
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V12PL63-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 12A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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V12PL63HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 12A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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V12PL63HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 12A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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V12PL63-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 12A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V |
на замовлення 6487 шт: термін постачання 21-31 дні (днів) |
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V12PL63-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 12A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ030-N4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 100A POWERTABPackaging: Bulk Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ100HN4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 100A POWERTABPackaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1320pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A Current - Reverse Leakage @ Vr: 300 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ045-N4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A POWERTABPackaging: Bulk Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2700pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ045HN4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A POWERTABPackaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2700pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-100BGQ015HN4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 100A POWERTABPackaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A Current - Reverse Leakage @ Vr: 20 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
| VTVS25ASMF-M3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.2VWM 42VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 433pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.07A
Voltage - Reverse Standoff (Typ): 25.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 25.2VWM 42VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 433pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.07A
Voltage - Reverse Standoff (Typ): 25.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.50 грн |
| 6000+ | 6.92 грн |
| 9000+ | 6.23 грн |
| VTVS25ASMF-M3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.2VWM 42VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 433pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.07A
Voltage - Reverse Standoff (Typ): 25.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 25.2VWM 42VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 433pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.07A
Voltage - Reverse Standoff (Typ): 25.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 18373 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.04 грн |
| 15+ | 20.77 грн |
| 100+ | 12.46 грн |
| 500+ | 10.83 грн |
| 1000+ | 7.36 грн |
| VS-25CTQ040-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 30A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Description: DIODE ARR SCHOTT 40V 30A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
на замовлення 7987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 128.50 грн |
| 50+ | 60.28 грн |
| 100+ | 54.05 грн |
| 500+ | 40.47 грн |
| 1000+ | 37.43 грн |
| BZT52A15-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER SOD124
Packaging: Tape & Reel (TR)
Description: DIODE ZENER SOD124
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| VS-80EBU04HN4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 80A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE STANDARD 400V 80A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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| VS-80EBU04-N4 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 80A POWERTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE STANDARD 400V 80A POWERTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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| BZD27C9V1P-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.81 грн |
| 6000+ | 9.51 грн |
| 9000+ | 9.05 грн |
| 15000+ | 8.01 грн |
| 21000+ | 7.73 грн |
| BZD27C9V1P-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
на замовлення 28110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.73 грн |
| 11+ | 28.05 грн |
| 100+ | 17.95 грн |
| 500+ | 12.76 грн |
| 1000+ | 11.45 грн |
| BZD17C5V6P-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.54 грн |
| 6000+ | 4.88 грн |
| 9000+ | 4.64 грн |
| 15000+ | 4.11 грн |
| 21000+ | 3.96 грн |
| 30000+ | 3.81 грн |
| BZD17C5V6P-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.03 грн |
| 23+ | 13.35 грн |
| 100+ | 8.99 грн |
| 500+ | 6.50 грн |
| 1000+ | 5.85 грн |
| VSSAF515-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 6.11 грн |
| 7000+ | 5.70 грн |
| VSSAF515-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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| VSSAF515-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Description: DIODE SCHOTTKY 150V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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| BZX384C9V1-G3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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од. на суму грн.
| BZX384C9V1-G3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Description: DIODE ZENER 9.1V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
на замовлення 10434 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.90 грн |
| 43+ | 7.12 грн |
| 100+ | 3.40 грн |
| 500+ | 3.14 грн |
| 1000+ | 3.08 грн |
| BZX384C6V2-G3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Description: DIODE ZENER 6.2V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.37 грн |
| 6000+ | 2.12 грн |
| 9000+ | 1.82 грн |
| BZX384C6V2-G3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Description: DIODE ZENER 6.2V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 14880 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.25 грн |
| 23+ | 13.27 грн |
| 100+ | 6.46 грн |
| 500+ | 5.06 грн |
| 1000+ | 3.52 грн |
| BZX384C6V2-HE3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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од. на суму грн.
| BZX384C6V2-HE3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
на замовлення 8600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.13 грн |
| 26+ | 11.55 грн |
| 100+ | 5.65 грн |
| 500+ | 4.43 грн |
| 1000+ | 3.08 грн |
| 2000+ | 2.67 грн |
| 5000+ | 2.43 грн |
| BZX384C6V2-HG3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: ZENER DIODE SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Description: ZENER DIODE SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| BZX384C6V2-HG3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: ZENER DIODE SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Description: ZENER DIODE SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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од. на суму грн.
| MMSZ5239B-HE3_A-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
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од. на суму грн.
| MMSZ5239B-HE3_A-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
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| SMBJ20AHE3_B/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| SMBJ20AHM3_B/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| SMBJ20AHM3_B/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| SMBJ20AHE3_B/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
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| TZX7V5X-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.80 грн |
| 30+ | 10.05 грн |
| 100+ | 4.90 грн |
| 500+ | 3.84 грн |
| 1000+ | 2.67 грн |
| 2000+ | 2.31 грн |
| 5000+ | 2.11 грн |
| TZX7V5X-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.97 грн |
| TZX7V5A-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
на замовлення 9800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.58 грн |
| 29+ | 10.57 грн |
| 100+ | 5.15 грн |
| 500+ | 4.03 грн |
| 1000+ | 2.80 грн |
| 2000+ | 2.43 грн |
| 5000+ | 2.22 грн |
| TZX7V5A-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.07 грн |
| TZX7V5D-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.10 грн |
| 30000+ | 1.99 грн |
| TZX7V5D-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.35 грн |
| 28+ | 10.80 грн |
| 100+ | 5.24 грн |
| 500+ | 4.10 грн |
| 1000+ | 2.85 грн |
| 2000+ | 2.47 грн |
| 5000+ | 2.26 грн |
| TZX7V5C-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.10 грн |
| TZX7V5C-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
на замовлення 29849 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.35 грн |
| 28+ | 10.80 грн |
| 100+ | 5.24 грн |
| 500+ | 4.10 грн |
| 1000+ | 2.85 грн |
| 2000+ | 2.47 грн |
| 5000+ | 2.26 грн |
| UGB18DCTHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| UGB18DCT-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| UGB18DCTHE3_A/P |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| 5KP26AHE3_A/C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V15K170C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 170V 3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 170 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 170V 3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 170 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V15K170C-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 170V 3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 170 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 170V 3A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 170 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 66.50 грн |
| VS-20BQ030HM3/5BT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-20BQ030HM3/5BT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
на замовлення 1661 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.73 грн |
| 11+ | 27.67 грн |
| 100+ | 17.72 грн |
| 500+ | 12.59 грн |
| 1000+ | 11.28 грн |
| VSSAF5L63-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.60 грн |
| 12+ | 26.92 грн |
| 100+ | 16.17 грн |
| 500+ | 14.05 грн |
| 1000+ | 9.55 грн |
| VSSAF5L63-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 9.73 грн |
| 7000+ | 8.98 грн |
| VSSAF5L63HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.16 грн |
| 10+ | 30.75 грн |
| 100+ | 21.42 грн |
| 500+ | 15.70 грн |
| 1000+ | 12.76 грн |
| VSSAF5L63HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Description: 5A, 60V SLIMSMA TRENCH SKY RECT.
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 13.29 грн |
| V12PL63HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.90 грн |
| 10+ | 56.10 грн |
| 100+ | 37.16 грн |
| 500+ | 27.24 грн |
| 1000+ | 24.78 грн |
| 2000+ | 23.25 грн |
| V12PL63HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V12PL63-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
на замовлення 2773 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.20 грн |
| 10+ | 42.52 грн |
| 100+ | 32.46 грн |
| 500+ | 23.67 грн |
| V12PL63-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 17.80 грн |
| V12PL63HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.32 грн |
| 10+ | 47.70 грн |
| 100+ | 37.16 грн |
| 500+ | 27.24 грн |
| V12PL63HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 21.60 грн |
| V12PL63-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
на замовлення 6487 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.77 грн |
| 10+ | 49.27 грн |
| 100+ | 32.46 грн |
| 500+ | 23.67 грн |
| 1000+ | 21.48 грн |
| 2000+ | 19.64 грн |
| V12PL63-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Description: DIODE SCHOTTKY 60V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2600pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 12 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
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од. на суму грн.
| VS-100BGQ030-N4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
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од. на суму грн.
| VS-100BGQ100HN4 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1320pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Description: DIODE SCHOTTK 100V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1320pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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од. на суму грн.
| VS-100BGQ045-N4 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-100BGQ045HN4 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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од. на суму грн.
| VS-100BGQ015HN4 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
товару немає в наявності
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од. на суму грн.













