Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6002) > Сторінка 100 з 101

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ESDALD05UG4X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF63F94FDA0C8&compId=ESDALD05UG4.pdf?ci_sign=7fb6413bc15a8c691660d84c2508478576bffea9 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD; ESD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: DFN2510
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
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ESDALD05UJ2X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF39A6C3D20C8&compId=ESDALD05UJ2.pdf?ci_sign=79716f2c4e6b2a09c9a88a15e5b9d3c5ef2bab45 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; SOT143; Ch: 2; LD; ESD
Application: USB
Peak pulse power dissipation: 136W
Case: SOT143
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
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SMDJ30CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
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ESDHD03UFX WeEn Semiconductors ESDHDxxUF%20Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
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ESDHD05UFX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF06C0C0FC0C8&compId=ESDHD05UF.pdf?ci_sign=d39c34f5b6400c25b9ee66084c63a1710f545894 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
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WMSC030H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDE1A264DE80D6&compId=WMSC030H12B1P6T.pdf?ci_sign=1a4928565b4e4a2baa6b6b0a4d9949ba1263e13e Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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BYC10DX-600,127 BYC10DX-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6AC27DCD60D5&compId=BYC10DX-600.pdf?ci_sign=72784e1a88ab44f95d463e89f3beb6ea0768e466 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)
9+47.87 грн
12+33.90 грн
25+31.28 грн
50+29.61 грн
100+27.70 грн
250+26.67 грн
500+26.12 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC10B-600,118 BYC10B-600,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2325FB5686259&compId=BYC10B-600.pdf?ci_sign=1fa5f9365fe1328c5d8d593c32875b05c581d6db pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
на замовлення 513 шт:
термін постачання 21-30 дні (днів)
8+55.57 грн
11+39.37 грн
25+31.75 грн
100+29.21 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC10X-600,127 BYC10X-600,127 WeEn Semiconductors Discrete%20Selection%20Guide%202011.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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BYC10X-600PQ BYC10X-600PQ WeEn Semiconductors byc10x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
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BYC10-600CT,127 BYC10-600CT,127 WeEn Semiconductors byc10-600ct.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Max. load current: 10A
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
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BYC10-600PQ BYC10-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20CFB45B1E0CE&compId=BYC10-600P.pdf?ci_sign=ada853b3a941e7c83c943836a29a0afe6383e10f Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Max. load current: 20A
Reverse recovery time: 18ns
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BYC100W-1200PQ BYC100W-1200PQ WeEn Semiconductors BYC100W-1200PQ_DS.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.9kA
Case: TO247-2
Max. forward voltage: 2.2V
Reverse recovery time: 115ns
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BYC10D-600,127 BYC10D-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6EC898B540D5&compId=BYC10D-600.pdf?ci_sign=10bfc6fd004b7d73304ce6a3c2c434f15dfbaef6 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
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P1KSMBJ68AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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N0118GA,116 WeEn Semiconductors n0118ga.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
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N0118GA,412 WeEn Semiconductors n0118ga.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; bulk
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Kind of package: bulk
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N0118GAML WeEn Semiconductors n0118ga.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
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BT153B-1200T-AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
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BT153B-1200TJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
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TYN50W-1600TQ TYN50W-1600TQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDCBAC277B9820&compId=TYN50W-1600T.pdf?ci_sign=4b94774899f36d98da028e88df7bd126c2df78bb pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
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ESDAHD712BE2X ESDAHD712BE2X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACE001B9D4180C8&compId=ESDAHD712BE2.pdf?ci_sign=732c668f54258c115dccc206da2528d63153c94d Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Version: ESD
Manufacturer series: HD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Application: universal
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BYC20D-600PQ BYC20D-600PQ WeEn Semiconductors byc20d-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Case: SOD59; TO220AC
Kind of package: tube
Reverse recovery time: 20ns
Max. forward voltage: 1.97V
Load current: 20A
Max. forward impulse current: 275A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
8+58.13 грн
9+48.58 грн
25+42.55 грн
100+39.69 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC20-600,127 BYC20-600,127 WeEn Semiconductors byc20-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Case: SOD59; TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 2.34V
Load current: 20A
Max. forward impulse current: 274A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
6+76.94 грн
10+58.82 грн
100+44.93 грн
500+41.83 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMCJ36CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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TYN16X-600CT,127 TYN16X-600CT,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96F9D84335A0C4&compId=TYN16X-600CT.pdf?ci_sign=ed2831e90060c1f47ffa5681a55386d0d0f630b9 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
10+44.45 грн
25+28.42 грн
50+22.31 грн
100+17.23 грн
Мінімальне замовлення: 10
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TYN16-600CT,127 WeEn Semiconductors tyn16-600ct.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
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TYN16-600RTQ WeEn Semiconductors tyn16-600rt.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16-800RTQ WeEn Semiconductors tyn16-800rt.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16S-600CTJ WeEn Semiconductors tyn16s-600ct.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 6mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 6mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
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TYN16X-600RT,127 WeEn Semiconductors tyn16x-600rt.pdf WEEN-S-A0001810729-1.pdf?t.download=true&u=5oefqw Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16X-800RT,127 WeEn Semiconductors tyn16x-800rt.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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MURS160BJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD97EC1D239840C4&compId=MURS160B.pdf?ci_sign=3ab3221439fda4a09d76fa274b9a19bb8d5f67b5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
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WMSC040H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDCA811C4160D6&compId=WMSC040H12B1P6T.pdf?ci_sign=9fdd7604d4d1a9d58ca37905ec595fbb2c9d449f Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC020H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDEB1E575360D6&compId=WMSC020H12B1P6T.pdf?ci_sign=e2a8cc051407d7807f4261aa3a91210a07aae8f6 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC016H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDF815500640D6&compId=WMSC016H12B1P6T.pdf?ci_sign=3bcb71c351b15555774bc110f49d362630617eed Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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ACT108-600E,412 WeEn Semiconductors act108-600e.pdf PHGLS21576-1.pdf?t.download=true&u=5oefqw Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. load current: 0.8A
Case: TO92
Mounting: THT
Kind of package: bulk
Gate current: 10mA
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
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BTA208S-800E,118 BTA208S-800E,118 WeEn Semiconductors bta208-800e.pdf Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Case: DPAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Mounting: SMD
Type of thyristor: triac
Gate current: 10mA
Max. load current: 8A
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
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BTA208S-800F,118 BTA208S-800F,118 WeEn Semiconductors bta208s-800f.pdf Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Case: DPAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Mounting: SMD
Type of thyristor: triac
Gate current: 25mA
Max. load current: 8A
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
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BTA208-600E,127 BTA208-600E,127 WeEn Semiconductors bta208-600e.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208X-600F,127 BTA208X-600F,127 WeEn Semiconductors bta208x-600f.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-600D,127 BTA208-600D,127 WeEn Semiconductors bta208-600d.pdf PHGLS30337-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-600F,127 BTA208-600F,127 WeEn Semiconductors bta208-600f.pdf BTA208-600F.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-800F,127 BTA208-800F,127 WeEn Semiconductors PHGLS22665-1.pdf?t.download=true&u=5oefqw bta208-800f.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208S-600D,118 BTA208S-600D,118 WeEn Semiconductors bta208s-600d.pdf Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208X-600D,127 BTA208X-600D,127 WeEn Semiconductors bta208x-600d.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208X-800F,127 BTA208X-800F,127 WeEn Semiconductors bta208x-800f.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Case: TO220FP
Features of semiconductor devices: sensitive gate
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 25mA
Max. load current: 8A
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
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BYC8-600P,127 BYC8-600P,127 WeEn Semiconductors byc8-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
на замовлення 889 шт:
термін постачання 21-30 дні (днів)
20+21.37 грн
Мінімальне замовлення: 20
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BYC8-600,127 BYC8-600,127 WeEn Semiconductors byc8-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
на замовлення 378 шт:
термін постачання 21-30 дні (днів)
11+39.32 грн
25+32.63 грн
50+30.88 грн
100+29.05 грн
250+26.75 грн
Мінімальне замовлення: 11
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BYC8D-600,127 BYC8D-600,127 WeEn Semiconductors byc8d-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
8+53.86 грн
10+45.88 грн
50+37.31 грн
Мінімальне замовлення: 8
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BYC8B-600,118 BYC8B-600,118 WeEn Semiconductors byc8b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: D2PAK; SOT404
Max. forward voltage: 2.3V
Reverse recovery time: 40ns
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BYC8-1200PQ BYC8-1200PQ WeEn Semiconductors byc8-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 46ns
Features of semiconductor devices: superfast switching
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BYC80MW-650PT2Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CCF01B76E3E0D6&compId=BYC80MW-650PT2Q.pdf?ci_sign=28c7e8e5210cdff9fdb2d9faa5c220d789124b80 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 80A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.6kA
Case: TO247-2
Max. forward voltage: 1.9V
Reverse recovery time: 120ns
Max. load current: 160A
Features of semiconductor devices: ultrafast switching
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BYC8B-600PJ BYC8B-600PJ WeEn Semiconductors byc8b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
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BYC8DX-600,127 BYC8DX-600,127 WeEn Semiconductors byc8dx-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Features of semiconductor devices: superfast switching
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BYC8X-600,127 BYC8X-600,127 WeEn Semiconductors byc8x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
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NXPSC066506Q NXPSC066506Q WeEn Semiconductors nxpsc06650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Max. forward voltage: 1.7V
Load current: 6A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
Kind of package: tube
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BYV32G-200,127 BYV32G-200,127 WeEn Semiconductors byv32g-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; I2PAK; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: I2PAK
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
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BT136-600E BT136-600E WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F1D642DBC259&compId=BT136-600E.pdf?ci_sign=6ef8137891e57a799d642ae94a5dde01e927594c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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WNS20H100CQ WNS20H100CQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5FCBC97F7C0C7&compId=WNS20H100C.PDF?ci_sign=0abf174bbd4c7b2dce5105c61b1541d0edb607d7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
13+34.20 грн
17+23.58 грн
Мінімальне замовлення: 13
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ESDALD05UG4X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF63F94FDA0C8&compId=ESDALD05UG4.pdf?ci_sign=7fb6413bc15a8c691660d84c2508478576bffea9
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD; ESD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: DFN2510
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
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ESDALD05UJ2X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF39A6C3D20C8&compId=ESDALD05UJ2.pdf?ci_sign=79716f2c4e6b2a09c9a88a15e5b9d3c5ef2bab45
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; SOT143; Ch: 2; LD; ESD
Application: USB
Peak pulse power dissipation: 136W
Case: SOT143
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
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SMDJ30CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
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ESDHD03UFX ESDHDxxUF%20Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
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ESDHD05UFX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF06C0C0FC0C8&compId=ESDHD05UF.pdf?ci_sign=d39c34f5b6400c25b9ee66084c63a1710f545894
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
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WMSC030H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDE1A264DE80D6&compId=WMSC030H12B1P6T.pdf?ci_sign=1a4928565b4e4a2baa6b6b0a4d9949ba1263e13e
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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BYC10DX-600,127 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6AC27DCD60D5&compId=BYC10DX-600.pdf?ci_sign=72784e1a88ab44f95d463e89f3beb6ea0768e466
BYC10DX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.87 грн
12+33.90 грн
25+31.28 грн
50+29.61 грн
100+27.70 грн
250+26.67 грн
500+26.12 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC10B-600,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2325FB5686259&compId=BYC10B-600.pdf?ci_sign=1fa5f9365fe1328c5d8d593c32875b05c581d6db pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC10B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
на замовлення 513 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+55.57 грн
11+39.37 грн
25+31.75 грн
100+29.21 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC10X-600,127 Discrete%20Selection%20Guide%202011.pdf
BYC10X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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BYC10X-600PQ byc10x-600p.pdf
BYC10X-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
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BYC10-600CT,127 byc10-600ct.pdf
BYC10-600CT,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Max. load current: 10A
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
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BYC10-600PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20CFB45B1E0CE&compId=BYC10-600P.pdf?ci_sign=ada853b3a941e7c83c943836a29a0afe6383e10f
BYC10-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Max. load current: 20A
Reverse recovery time: 18ns
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BYC100W-1200PQ BYC100W-1200PQ_DS.pdf
BYC100W-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.9kA
Case: TO247-2
Max. forward voltage: 2.2V
Reverse recovery time: 115ns
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BYC10D-600,127 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6EC898B540D5&compId=BYC10D-600.pdf?ci_sign=10bfc6fd004b7d73304ce6a3c2c434f15dfbaef6
BYC10D-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
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P1KSMBJ68AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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N0118GA,116 n0118ga.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
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N0118GA,412 n0118ga.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; bulk
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Kind of package: bulk
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N0118GAML n0118ga.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
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BT153B-1200T-AJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
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BT153B-1200TJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
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TYN50W-1600TQ pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDCBAC277B9820&compId=TYN50W-1600T.pdf?ci_sign=4b94774899f36d98da028e88df7bd126c2df78bb pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
TYN50W-1600TQ
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
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ESDAHD712BE2X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACE001B9D4180C8&compId=ESDAHD712BE2.pdf?ci_sign=732c668f54258c115dccc206da2528d63153c94d
ESDAHD712BE2X
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Version: ESD
Manufacturer series: HD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Application: universal
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BYC20D-600PQ byc20d-600p.pdf
BYC20D-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Case: SOD59; TO220AC
Kind of package: tube
Reverse recovery time: 20ns
Max. forward voltage: 1.97V
Load current: 20A
Max. forward impulse current: 275A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+58.13 грн
9+48.58 грн
25+42.55 грн
100+39.69 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC20-600,127 byc20-600.pdf
BYC20-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Case: SOD59; TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 2.34V
Load current: 20A
Max. forward impulse current: 274A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.94 грн
10+58.82 грн
100+44.93 грн
500+41.83 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMCJ36CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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TYN16X-600CT,127 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96F9D84335A0C4&compId=TYN16X-600CT.pdf?ci_sign=ed2831e90060c1f47ffa5681a55386d0d0f630b9 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
TYN16X-600CT,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.45 грн
25+28.42 грн
50+22.31 грн
100+17.23 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TYN16-600CT,127 tyn16-600ct.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
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TYN16-600RTQ tyn16-600rt.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16-800RTQ tyn16-800rt.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16S-600CTJ tyn16s-600ct.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 6mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 6mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
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TYN16X-600RT,127 tyn16x-600rt.pdf WEEN-S-A0001810729-1.pdf?t.download=true&u=5oefqw
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16X-800RT,127 tyn16x-800rt.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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MURS160BJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD97EC1D239840C4&compId=MURS160B.pdf?ci_sign=3ab3221439fda4a09d76fa274b9a19bb8d5f67b5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
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WMSC040H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDCA811C4160D6&compId=WMSC040H12B1P6T.pdf?ci_sign=9fdd7604d4d1a9d58ca37905ec595fbb2c9d449f
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC020H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDEB1E575360D6&compId=WMSC020H12B1P6T.pdf?ci_sign=e2a8cc051407d7807f4261aa3a91210a07aae8f6
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC016H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDF815500640D6&compId=WMSC016H12B1P6T.pdf?ci_sign=3bcb71c351b15555774bc110f49d362630617eed
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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ACT108-600E,412 act108-600e.pdf PHGLS21576-1.pdf?t.download=true&u=5oefqw
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. load current: 0.8A
Case: TO92
Mounting: THT
Kind of package: bulk
Gate current: 10mA
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
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BTA208S-800E,118 bta208-800e.pdf
BTA208S-800E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Case: DPAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Mounting: SMD
Type of thyristor: triac
Gate current: 10mA
Max. load current: 8A
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
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BTA208S-800F,118 bta208s-800f.pdf
BTA208S-800F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Case: DPAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Mounting: SMD
Type of thyristor: triac
Gate current: 25mA
Max. load current: 8A
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
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BTA208-600E,127 bta208-600e.pdf
BTA208-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208X-600F,127 bta208x-600f.pdf
BTA208X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-600D,127 bta208-600d.pdf PHGLS30337-1.pdf?t.download=true&u=5oefqw
BTA208-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-600F,127 bta208-600f.pdf BTA208-600F.pdf
BTA208-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-800F,127 PHGLS22665-1.pdf?t.download=true&u=5oefqw bta208-800f.pdf
BTA208-800F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208S-600D,118 bta208s-600d.pdf
BTA208S-600D,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208X-600D,127 bta208x-600d.pdf
BTA208X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208X-800F,127 bta208x-800f.pdf
BTA208X-800F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Case: TO220FP
Features of semiconductor devices: sensitive gate
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 25mA
Max. load current: 8A
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
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BYC8-600P,127 byc8-600p.pdf
BYC8-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
на замовлення 889 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.37 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BYC8-600,127 byc8-600.pdf
BYC8-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
на замовлення 378 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.32 грн
25+32.63 грн
50+30.88 грн
100+29.05 грн
250+26.75 грн
Мінімальне замовлення: 11
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BYC8D-600,127 byc8d-600.pdf
BYC8D-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+53.86 грн
10+45.88 грн
50+37.31 грн
Мінімальне замовлення: 8
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BYC8B-600,118 byc8b-600.pdf
BYC8B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: D2PAK; SOT404
Max. forward voltage: 2.3V
Reverse recovery time: 40ns
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BYC8-1200PQ byc8-1200p.pdf
BYC8-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 46ns
Features of semiconductor devices: superfast switching
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BYC80MW-650PT2Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CCF01B76E3E0D6&compId=BYC80MW-650PT2Q.pdf?ci_sign=28c7e8e5210cdff9fdb2d9faa5c220d789124b80
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 80A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.6kA
Case: TO247-2
Max. forward voltage: 1.9V
Reverse recovery time: 120ns
Max. load current: 160A
Features of semiconductor devices: ultrafast switching
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BYC8B-600PJ byc8b-600p.pdf
BYC8B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
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BYC8DX-600,127 byc8dx-600.pdf
BYC8DX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Features of semiconductor devices: superfast switching
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BYC8X-600,127 byc8x-600.pdf
BYC8X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
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NXPSC066506Q nxpsc06650.pdf
NXPSC066506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Max. forward voltage: 1.7V
Load current: 6A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
Kind of package: tube
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BYV32G-200,127 byv32g-200.pdf
BYV32G-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; I2PAK; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: I2PAK
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
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BT136-600E pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F1D642DBC259&compId=BT136-600E.pdf?ci_sign=6ef8137891e57a799d642ae94a5dde01e927594c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT136-600E
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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WNS20H100CQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5FCBC97F7C0C7&compId=WNS20H100C.PDF?ci_sign=0abf174bbd4c7b2dce5105c61b1541d0edb607d7
WNS20H100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.20 грн
17+23.58 грн
Мінімальне замовлення: 13
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