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TYN16X-600CT,127 TYN16X-600CT,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96F9D84335A0C4&compId=TYN16X-600CT.pdf?ci_sign=ed2831e90060c1f47ffa5681a55386d0d0f630b9 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
10+45.29 грн
25+28.95 грн
50+22.72 грн
100+17.55 грн
Мінімальне замовлення: 10
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TYN16-600CT,127 WeEn Semiconductors tyn16-600ct.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
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TYN16-600RTQ WeEn Semiconductors tyn16-600rt.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16-800RTQ WeEn Semiconductors tyn16-800rt.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16S-600CTJ WeEn Semiconductors tyn16s-600ct.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 6mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 6mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
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TYN16X-600RT,127 WeEn Semiconductors tyn16x-600rt.pdf WEEN-S-A0001810729-1.pdf?t.download=true&u=5oefqw Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16X-800RT,127 WeEn Semiconductors tyn16x-800rt.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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MURS160BJ WeEn Semiconductors MURS160B.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
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WMSC040H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDCA811C4160D6&compId=WMSC040H12B1P6T.pdf?ci_sign=9fdd7604d4d1a9d58ca37905ec595fbb2c9d449f Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC020H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDEB1E575360D6&compId=WMSC020H12B1P6T.pdf?ci_sign=e2a8cc051407d7807f4261aa3a91210a07aae8f6 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC016H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDF815500640D6&compId=WMSC016H12B1P6T.pdf?ci_sign=3bcb71c351b15555774bc110f49d362630617eed Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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ACT108-600E,412 WeEn Semiconductors act108-600e.pdf PHGLS21576-1.pdf?t.download=true&u=5oefqw Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: internally triggered
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BTA208S-800E,118 BTA208S-800E,118 WeEn Semiconductors bta208-800e.pdf Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208S-800F,118 BTA208S-800F,118 WeEn Semiconductors bta208s-800f.pdf Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208-600E,127 BTA208-600E,127 WeEn Semiconductors bta208-600e.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208X-600F,127 BTA208X-600F,127 WeEn Semiconductors bta208x-600f.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-600D,127 BTA208-600D,127 WeEn Semiconductors bta208-600d.pdf PHGLS30337-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-600F,127 BTA208-600F,127 WeEn Semiconductors bta208-600f.pdf BTA208-600F.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-800F,127 BTA208-800F,127 WeEn Semiconductors PHGLS22665-1.pdf?t.download=true&u=5oefqw bta208-800f.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208S-600D,118 BTA208S-600D,118 WeEn Semiconductors bta208s-600d.pdf Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208X-600D,127 BTA208X-600D,127 WeEn Semiconductors bta208x-600d.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208X-800F,127 BTA208X-800F,127 WeEn Semiconductors bta208x-800f.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYC8-600P,127 BYC8-600P,127 WeEn Semiconductors byc8-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Case: SOD59; TO220AC
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Kind of package: tube
Mounting: THT
на замовлення 874 шт:
термін постачання 21-30 дні (днів)
20+21.77 грн
Мінімальне замовлення: 20
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BYC8-600,127 BYC8-600,127 WeEn Semiconductors byc8-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Case: SOD59; TO220AC
Reverse recovery time: 40ns
Max. forward voltage: 1.85V
Load current: 8A
Max. forward impulse current: 88A
Max. off-state voltage: 0.6kV
Kind of package: tube
Mounting: THT
на замовлення 378 шт:
термін постачання 21-30 дні (днів)
11+40.06 грн
25+33.24 грн
50+31.46 грн
100+29.60 грн
250+27.25 грн
Мінімальне замовлення: 11
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BYC8D-600,127 BYC8D-600,127 WeEn Semiconductors byc8d-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
8+54.87 грн
10+46.74 грн
50+38.01 грн
Мінімальне замовлення: 8
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BYC8B-600,118 BYC8B-600,118 WeEn Semiconductors byc8b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: D2PAK; SOT404
Max. forward voltage: 2.3V
Reverse recovery time: 40ns
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BYC8-1200PQ BYC8-1200PQ WeEn Semiconductors byc8-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 46ns
Features of semiconductor devices: superfast switching
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BYC80MW-650PT2Q WeEn Semiconductors BYC80MW-650PT2Q.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 120ns
Max. forward voltage: 1.9V
Load current: 80A
Max. load current: 160A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Kind of package: tube
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BYC8B-600PJ BYC8B-600PJ WeEn Semiconductors byc8b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
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BYC8DX-600,127 BYC8DX-600,127 WeEn Semiconductors byc8dx-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Features of semiconductor devices: superfast switching
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BYC8X-600,127 BYC8X-600,127 WeEn Semiconductors byc8x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
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NXPSC066506Q NXPSC066506Q WeEn Semiconductors nxpsc06650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Max. forward voltage: 1.7V
Load current: 6A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
Kind of package: tube
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BYV32G-200,127 BYV32G-200,127 WeEn Semiconductors byv32g-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; I2PAK; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: I2PAK
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
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WNS20H100CQ WNS20H100CQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5FCBC97F7C0C7&compId=WNS20H100C.PDF?ci_sign=0abf174bbd4c7b2dce5105c61b1541d0edb607d7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
13+34.84 грн
17+24.02 грн
Мінімальне замовлення: 13
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BUJD203AX,127 BUJD203AX,127 WeEn Semiconductors BUJD203AX.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 26W; TO220FP
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 11...22
Power dissipation: 26W
Collector-emitter voltage: 425V
Polarisation: bipolar
Case: TO220FP
Mounting: THT
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WNS40100CQ WNS40100CQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCF993B5D3480143&compId=WNS40100C.pdf?ci_sign=0a80df66e14763cd58651444b4b1eb668d3497e6 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
на замовлення 348 шт:
термін постачання 21-30 дні (днів)
9+48.77 грн
11+38.09 грн
50+34.69 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV30X-600PQ BYV30X-600PQ WeEn Semiconductors byv30x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 330A; Ufmax: 1.55V
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 75ns
Max. forward voltage: 1.55V
Load current: 30A
Max. forward impulse current: 330A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 967 шт:
термін постачання 21-30 дні (днів)
5+83.29 грн
25+73.59 грн
100+66.31 грн
250+64.69 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
WNS40H100CQ WNS40H100CQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B89058DE8C280C7&compId=WNS40H100C.PDF?ci_sign=6c5f6fd754441970c472329b668745481c87f54b Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
на замовлення 733 шт:
термін постачання 21-30 дні (днів)
7+67.06 грн
10+50.14 грн
50+43.67 грн
100+42.05 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
WNS40H100CGQ WNS40H100CGQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD9662662B7D20C4&compId=WNS40H100CG.pdf?ci_sign=201e5d94639d6263e7a5fc9795ece112afa5913a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
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BT132-600D,412 BT132-600D,412 WeEn Semiconductors bt132-600d.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Mounting: THT
Type of thyristor: triac
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Case: TO92
Technology: 4Q
Gate current: 5/10mA
Max. load current: 1A
Max. forward impulse current: 16A
Max. off-state voltage: 0.6kV
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BT132-600D,116 BT132-600D,116 WeEn Semiconductors BT132-600D%2C116.pdf bt132-600d.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Mounting: THT
Type of thyristor: triac
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Case: TO92
Technology: 4Q
Gate current: 5/10mA
Max. load current: 1A
Max. forward impulse current: 16A
Max. off-state voltage: 0.6kV
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BYC75W-600PT2Q WeEn Semiconductors BYC75W-600PT2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; tube; Ifsm: 700A; TO247-2; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 700A
Case: TO247-2
Max. forward voltage: 2.1V
Max. load current: 150A
Reverse recovery time: 50ns
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BYC75W-600PQ BYC75W-600PQ WeEn Semiconductors byc75w-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; tube; Ifsm: 750A; Ufmax: 2.1V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 750A
Case: TO247AC Modified
Max. forward voltage: 2.1V
Reverse recovery time: 50ns
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SMBJ60CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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NXPLQSC30650W6Q NXPLQSC30650W6Q WeEn Semiconductors nxplqsc30650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.95V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
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BYQ28ED-200,118 BYQ28ED-200,118 WeEn Semiconductors byq28ed-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Type of diode: rectifying
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Mounting: SMD
Max. forward voltage: 1.25V
Max. load current: 10A
Max. forward impulse current: 55A
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Reverse recovery time: 25ns
на замовлення 2005 шт:
термін постачання 21-30 дні (днів)
10+43.54 грн
12+35.10 грн
100+27.01 грн
500+21.83 грн
1000+20.86 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BYQ28E-200E,127 BYQ28E-200E,127 WeEn Semiconductors byq28e-200e.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Mounting: THT
Max. forward voltage: 0.895V
Max. load current: 10A
Max. forward impulse current: 55A
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
10+47.03 грн
12+34.77 грн
30+30.41 грн
100+26.04 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BYQ28E-200,127 BYQ28E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E273FBF91D8259&compId=BYQ28E-200.pdf?ci_sign=d9202b2e23d49dbf26d79aa0716ca6c8b933b1f6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Mounting: THT
Max. forward voltage: 0.8V
Max. load current: 10A
Max. forward impulse current: 55A
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
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TYN40-800TQ WeEn Semiconductors tyn40-800t.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
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TYN40Y-800TQ WeEn Semiconductors TYN40Y-800T.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
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BTA206X-800CT,127 WeEn Semiconductors bta206x-800ct.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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BTA206X-800CT/DG BTA206X-800CT/DG WeEn Semiconductors BTA206x-800CT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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BTA212-600B,127 BTA212-600B,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782926F8B63F16259&compId=BTA212-600B.pdf?ci_sign=627a2ac711beef098c8a0f39124d6e4a5ab8dfa1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT136-600E BT136-600E WeEn Semiconductors BT136-600E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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SMBJ78AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 87.4...95.1V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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BYQ28X-200,127 BYQ28X-200,127 WeEn Semiconductors byq28x-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
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BT258-600R,127 BT258-600R,127 WeEn Semiconductors bt258-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Case: TO220AB
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Kind of package: tube
Mounting: THT
на замовлення 761 шт:
термін постачання 21-30 дні (днів)
8+59.22 грн
12+36.31 грн
100+28.06 грн
500+23.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
WNS30H100CQ WNS30H100CQ WeEn Semiconductors WNS30H100C.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.67V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 330A
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ACT108-600D,126 WeEn Semiconductors act108-600d.pdf PHGLS21889-1.pdf?t.download=true&u=5oefqw Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
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ACT108-600D,412 WeEn Semiconductors PHGLS21889-1.pdf?t.download=true&u=5oefqw act108-600d.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: internally triggered
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TYN16X-600CT,127 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96F9D84335A0C4&compId=TYN16X-600CT.pdf?ci_sign=ed2831e90060c1f47ffa5681a55386d0d0f630b9 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
TYN16X-600CT,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+45.29 грн
25+28.95 грн
50+22.72 грн
100+17.55 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TYN16-600CT,127 tyn16-600ct.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
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TYN16-600RTQ tyn16-600rt.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16-800RTQ tyn16-800rt.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16S-600CTJ tyn16s-600ct.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 6mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 6mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
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TYN16X-600RT,127 tyn16x-600rt.pdf WEEN-S-A0001810729-1.pdf?t.download=true&u=5oefqw
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16X-800RT,127 tyn16x-800rt.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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MURS160BJ MURS160B.pdf _ween_psg2020.pdf
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
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WMSC040H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDCA811C4160D6&compId=WMSC040H12B1P6T.pdf?ci_sign=9fdd7604d4d1a9d58ca37905ec595fbb2c9d449f
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC020H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDEB1E575360D6&compId=WMSC020H12B1P6T.pdf?ci_sign=e2a8cc051407d7807f4261aa3a91210a07aae8f6
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC016H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDF815500640D6&compId=WMSC016H12B1P6T.pdf?ci_sign=3bcb71c351b15555774bc110f49d362630617eed
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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ACT108-600E,412 act108-600e.pdf PHGLS21576-1.pdf?t.download=true&u=5oefqw
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: internally triggered
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BTA208S-800E,118 bta208-800e.pdf
BTA208S-800E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208S-800F,118 bta208s-800f.pdf
BTA208S-800F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208-600E,127 bta208-600e.pdf
BTA208-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208X-600F,127 bta208x-600f.pdf
BTA208X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-600D,127 bta208-600d.pdf PHGLS30337-1.pdf?t.download=true&u=5oefqw
BTA208-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-600F,127 bta208-600f.pdf BTA208-600F.pdf
BTA208-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-800F,127 PHGLS22665-1.pdf?t.download=true&u=5oefqw bta208-800f.pdf
BTA208-800F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208S-600D,118 bta208s-600d.pdf
BTA208S-600D,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208X-600D,127 bta208x-600d.pdf
BTA208X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208X-800F,127 bta208x-800f.pdf
BTA208X-800F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYC8-600P,127 byc8-600p.pdf
BYC8-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Case: SOD59; TO220AC
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Kind of package: tube
Mounting: THT
на замовлення 874 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.77 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BYC8-600,127 byc8-600.pdf
BYC8-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Case: SOD59; TO220AC
Reverse recovery time: 40ns
Max. forward voltage: 1.85V
Load current: 8A
Max. forward impulse current: 88A
Max. off-state voltage: 0.6kV
Kind of package: tube
Mounting: THT
на замовлення 378 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.06 грн
25+33.24 грн
50+31.46 грн
100+29.60 грн
250+27.25 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BYC8D-600,127 byc8d-600.pdf
BYC8D-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.87 грн
10+46.74 грн
50+38.01 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC8B-600,118 byc8b-600.pdf
BYC8B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: D2PAK; SOT404
Max. forward voltage: 2.3V
Reverse recovery time: 40ns
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BYC8-1200PQ byc8-1200p.pdf
BYC8-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 46ns
Features of semiconductor devices: superfast switching
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BYC80MW-650PT2Q BYC80MW-650PT2Q.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 120ns
Max. forward voltage: 1.9V
Load current: 80A
Max. load current: 160A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Kind of package: tube
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BYC8B-600PJ byc8b-600p.pdf
BYC8B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
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BYC8DX-600,127 byc8dx-600.pdf
BYC8DX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Features of semiconductor devices: superfast switching
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BYC8X-600,127 byc8x-600.pdf
BYC8X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
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NXPSC066506Q nxpsc06650.pdf
NXPSC066506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Max. forward voltage: 1.7V
Load current: 6A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
Kind of package: tube
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BYV32G-200,127 byv32g-200.pdf
BYV32G-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; I2PAK; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: I2PAK
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
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WNS20H100CQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5FCBC97F7C0C7&compId=WNS20H100C.PDF?ci_sign=0abf174bbd4c7b2dce5105c61b1541d0edb607d7
WNS20H100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.84 грн
17+24.02 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BUJD203AX,127 BUJD203AX.pdf
BUJD203AX,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 26W; TO220FP
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 11...22
Power dissipation: 26W
Collector-emitter voltage: 425V
Polarisation: bipolar
Case: TO220FP
Mounting: THT
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WNS40100CQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCF993B5D3480143&compId=WNS40100C.pdf?ci_sign=0a80df66e14763cd58651444b4b1eb668d3497e6
WNS40100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
на замовлення 348 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+48.77 грн
11+38.09 грн
50+34.69 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV30X-600PQ byv30x-600p.pdf
BYV30X-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 330A; Ufmax: 1.55V
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 75ns
Max. forward voltage: 1.55V
Load current: 30A
Max. forward impulse current: 330A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 967 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+83.29 грн
25+73.59 грн
100+66.31 грн
250+64.69 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
WNS40H100CQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B89058DE8C280C7&compId=WNS40H100C.PDF?ci_sign=6c5f6fd754441970c472329b668745481c87f54b
WNS40H100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
на замовлення 733 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.06 грн
10+50.14 грн
50+43.67 грн
100+42.05 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
WNS40H100CGQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD9662662B7D20C4&compId=WNS40H100CG.pdf?ci_sign=201e5d94639d6263e7a5fc9795ece112afa5913a
WNS40H100CGQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
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BT132-600D,412 bt132-600d.pdf
BT132-600D,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Mounting: THT
Type of thyristor: triac
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Case: TO92
Technology: 4Q
Gate current: 5/10mA
Max. load current: 1A
Max. forward impulse current: 16A
Max. off-state voltage: 0.6kV
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BT132-600D,116 BT132-600D%2C116.pdf bt132-600d.pdf
BT132-600D,116
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Mounting: THT
Type of thyristor: triac
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Case: TO92
Technology: 4Q
Gate current: 5/10mA
Max. load current: 1A
Max. forward impulse current: 16A
Max. off-state voltage: 0.6kV
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BYC75W-600PT2Q BYC75W-600PT2.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; tube; Ifsm: 700A; TO247-2; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 700A
Case: TO247-2
Max. forward voltage: 2.1V
Max. load current: 150A
Reverse recovery time: 50ns
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BYC75W-600PQ byc75w-600p.pdf
BYC75W-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; tube; Ifsm: 750A; Ufmax: 2.1V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 750A
Case: TO247AC Modified
Max. forward voltage: 2.1V
Reverse recovery time: 50ns
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SMBJ60CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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NXPLQSC30650W6Q nxplqsc30650w.pdf
NXPLQSC30650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.95V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
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BYQ28ED-200,118 byq28ed-200.pdf
BYQ28ED-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Type of diode: rectifying
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Mounting: SMD
Max. forward voltage: 1.25V
Max. load current: 10A
Max. forward impulse current: 55A
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Reverse recovery time: 25ns
на замовлення 2005 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.54 грн
12+35.10 грн
100+27.01 грн
500+21.83 грн
1000+20.86 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BYQ28E-200E,127 byq28e-200e.pdf
BYQ28E-200E,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Mounting: THT
Max. forward voltage: 0.895V
Max. load current: 10A
Max. forward impulse current: 55A
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+47.03 грн
12+34.77 грн
30+30.41 грн
100+26.04 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BYQ28E-200,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E273FBF91D8259&compId=BYQ28E-200.pdf?ci_sign=d9202b2e23d49dbf26d79aa0716ca6c8b933b1f6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYQ28E-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: SOT78; TO220AB
Mounting: THT
Max. forward voltage: 0.8V
Max. load current: 10A
Max. forward impulse current: 55A
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
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TYN40-800TQ tyn40-800t.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
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TYN40Y-800TQ TYN40Y-800T.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
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BTA206X-800CT,127 bta206x-800ct.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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BTA206X-800CT/DG BTA206x-800CT.pdf _ween_psg2020.pdf
BTA206X-800CT/DG
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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BTA212-600B,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782926F8B63F16259&compId=BTA212-600B.pdf?ci_sign=627a2ac711beef098c8a0f39124d6e4a5ab8dfa1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA212-600B,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT136-600E BT136-600E.pdf _ween_psg2020.pdf
BT136-600E
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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SMBJ78AJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 87.4...95.1V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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BYQ28X-200,127 byq28x-200.pdf
BYQ28X-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
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BT258-600R,127 bt258-600r.pdf
BT258-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Case: TO220AB
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Kind of package: tube
Mounting: THT
на замовлення 761 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+59.22 грн
12+36.31 грн
100+28.06 грн
500+23.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
WNS30H100CQ WNS30H100C.PDF
WNS30H100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.67V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 330A
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ACT108-600D,126 act108-600d.pdf PHGLS21889-1.pdf?t.download=true&u=5oefqw
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
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ACT108-600D,412 PHGLS21889-1.pdf?t.download=true&u=5oefqw act108-600d.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: internally triggered
товару немає в наявності
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