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BTA308X-800ETQ WeEn Semiconductors bta308x-800et.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA308Y-800ETQ WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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EC103D1,412 EC103D1,412 WeEn Semiconductors ec103d1.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 3µA
Mounting: THT
Kind of package: bulk
Turn-on time: 2µs
Load current: 0.5A
Max. forward impulse current: 8A
на замовлення 1408 шт:
термін постачання 21-30 дні (днів)
32+13.71 грн
47+8.59 грн
54+7.48 грн
100+6.44 грн
500+5.33 грн
1000+4.93 грн
Мінімальне замовлення: 32
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EC103D1WX EC103D1WX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7E483968B874A&compId=EC103D1W.pdf?ci_sign=7c99ff9b7f0096d67b30788cd4b7149ad9a3a33f pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
16+27.41 грн
18+23.07 грн
20+20.76 грн
Мінімальне замовлення: 16
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EC103D1,116 EC103D1,116 WeEn Semiconductors ec103d1.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
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EC103D1WF WeEn Semiconductors Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
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NXPSC20650W-AQ NXPSC20650W-AQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Application: automotive industry
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WNSC6D20650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
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WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
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BYV32E-300PQ BYV32E-300PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD95B955CDB060C4&compId=BYV32E-300P.pdf?ci_sign=f7f7fbbc6a96b744d3417cbff690b8631c544806 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
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BYV32EB-200PJ BYV32EB-200PJ WeEn Semiconductors byv32eb-200p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
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BYV32EB-300PJ BYV32EB-300PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD963EBC3DB120C4&compId=BYV32EB-300P.pdf?ci_sign=44df4d4918ee7b2325f3c599d4aeb56c9a415f47 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 220A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
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BYV32EX-300PQ BYV32EX-300PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD964B10D38520C4&compId=BYV32EX-300P.pdf?ci_sign=4968244df9558922ddf562afb67bf6717b590dab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
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5.0SMDJ78CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 5.0SMDJ
Kind of package: reel; tape
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ESDALD36BCX ESDALD36BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Manufacturer series: LD
Number of channels: 1
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WNSCM80120R6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D04CAD2E0700D4&compId=WNSCM80120R6Q.pdf?ci_sign=cd8c842365da9e18e401af5a828868b59927e4bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC12650T6J WeEn Semiconductors WNSC12650T_0.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 57A
Kind of package: reel; tape
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WNSC12650WQ WNSC12650WQ WeEn Semiconductors WNSC12650W_2.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
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WNSC10650T6J WeEn Semiconductors WNSC10650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 50A
Kind of package: reel; tape
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WNSC10650WQ WNSC10650WQ WeEn Semiconductors WNSC10650W_0.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 50A
Kind of package: tube
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ACTT10-800CQ WeEn Semiconductors ACTT10-800C.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 10A; Igt: 35mA; TO220AB; THT; tube
Max. off-state voltage: 0.8kV
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate current: 35mA
Max. load current: 10A
Type of thyristor: AC switch
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ACTT2S-800E,118 ACTT2S-800E,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2D21B5FD0A259&compId=ACTT2S-800E.pdf?ci_sign=02805e9f71d4f8934a828b81c1963bcf8997af54 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 343 шт:
термін постачання 21-30 дні (днів)
10+44.55 грн
14+29.04 грн
25+25.85 грн
100+21.88 грн
250+19.81 грн
Мінімальне замовлення: 10
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BYC15M-650PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D1A321A22E40D4&compId=BYC15M-650PQ.pdf?ci_sign=869c7ba9e5bdd3ffa845f971cb4579e130bee32b Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
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P1KSMBJ68CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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SMDJ40AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
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BT155W-1400TQ WeEn Semiconductors BT155W-1400T.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Case: SOT429; TO247-3
Mounting: THT
Max. off-state voltage: 1.4kV
Load current: 50A
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50mA
Max. load current: 79A
Max. forward impulse current: 715A
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SM8S43CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
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ESDALD18BCX ESDALD18BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDE1F9962920C8&compId=ESDALD18BC.pdf?ci_sign=a3f9bf3ae87dd08c8348e01ebd9b9c22cd5da5aa Category: Protection diodes - arrays
Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 18V
Breakdown voltage: 19V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Version: ESD
Case: SOD323
Manufacturer series: LD
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ESDALD12BCX ESDALD12BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Application: universal
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 12V
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.35kW
Case: SOD323
Semiconductor structure: bidirectional
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P6SMBJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BTA204-800E.127 BTA204-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829264EE0CC9C259&compId=BTA204-800E.pdf?ci_sign=4094da1a392bee596b128267c8e14d4ba3fdf09c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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WSJM65R170XQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E36C1BA78960D6&compId=WSJM65R170XQ.pdf?ci_sign=5747ac009b72ff18769d17f6f7dcfe2f9d093752 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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ACTT2S-800ETNJ WeEn Semiconductors actt2s-800etn.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF1A0DF366A0D3&compId=ACTT4S-800E.pdf?ci_sign=61a3631da004dd589c7e85f1d96b66b298a432c8 Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Case: DPAK
Mounting: SMD
Type of thyristor: AC switch
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 2201 шт:
термін постачання 21-30 дні (днів)
12+35.98 грн
15+28.32 грн
100+19.97 грн
250+19.01 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BYV30B-600PJ BYV30B-600PJ WeEn Semiconductors byv30b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
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BYV25F-600,127 BYV25F-600,127 WeEn Semiconductors byv25f-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Case: SOD59; TO220AC
Reverse recovery time: 35ns
Load current: 5A
Max. forward voltage: 1.7V
Max. forward impulse current: 66A
Max. off-state voltage: 0.6kV
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BT139-800.127 BT139-800.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D2FDA6B36259&compId=BT139-800.pdf?ci_sign=24bbac5cefa6e21f9d6aa10618d78f3034248c8a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BT136-600E BT136-600E WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F1D642DBC259&compId=BT136-600E.pdf?ci_sign=6ef8137891e57a799d642ae94a5dde01e927594c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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OT412,115 OT412,115 WeEn Semiconductors Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 776 шт:
термін постачання 21-30 дні (днів)
26+16.53 грн
32+12.57 грн
100+11.06 грн
250+10.66 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
BUJ105A,127 BUJ105A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: NPN
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector current: 8A
Current gain: 13...36
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
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BTA308X-800ETQ bta308x-800et.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA308Y-800ETQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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EC103D1,412 ec103d1.pdf
EC103D1,412
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 3µA
Mounting: THT
Kind of package: bulk
Turn-on time: 2µs
Load current: 0.5A
Max. forward impulse current: 8A
на замовлення 1408 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.71 грн
47+8.59 грн
54+7.48 грн
100+6.44 грн
500+5.33 грн
1000+4.93 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
EC103D1WX pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7E483968B874A&compId=EC103D1W.pdf?ci_sign=7c99ff9b7f0096d67b30788cd4b7149ad9a3a33f pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
EC103D1WX
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.41 грн
18+23.07 грн
20+20.76 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
EC103D1,116 ec103d1.pdf
EC103D1,116
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
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EC103D1WF
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
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NXPSC20650W-AQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
NXPSC20650W-AQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Application: automotive industry
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WNSC6D20650B6J pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
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WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
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BYV32E-300PQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD95B955CDB060C4&compId=BYV32E-300P.pdf?ci_sign=f7f7fbbc6a96b744d3417cbff690b8631c544806 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32E-300PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
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BYV32EB-200PJ byv32eb-200p.pdf
BYV32EB-200PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
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BYV32EB-300PJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD963EBC3DB120C4&compId=BYV32EB-300P.pdf?ci_sign=44df4d4918ee7b2325f3c599d4aeb56c9a415f47 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EB-300PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 220A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
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BYV32EX-300PQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD964B10D38520C4&compId=BYV32EX-300P.pdf?ci_sign=4968244df9558922ddf562afb67bf6717b590dab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EX-300PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
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5.0SMDJ78CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 5.0SMDJ
Kind of package: reel; tape
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ESDALD36BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD36BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Manufacturer series: LD
Number of channels: 1
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WNSCM80120R6Q pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D04CAD2E0700D4&compId=WNSCM80120R6Q.pdf?ci_sign=cd8c842365da9e18e401af5a828868b59927e4bb
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC12650T6J WNSC12650T_0.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 57A
Kind of package: reel; tape
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WNSC12650WQ WNSC12650W_2.pdf
WNSC12650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
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WNSC10650T6J WNSC10650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 50A
Kind of package: reel; tape
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WNSC10650WQ WNSC10650W_0.pdf
WNSC10650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 50A
Kind of package: tube
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ACTT10-800CQ ACTT10-800C.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 10A; Igt: 35mA; TO220AB; THT; tube
Max. off-state voltage: 0.8kV
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate current: 35mA
Max. load current: 10A
Type of thyristor: AC switch
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ACTT2S-800E,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2D21B5FD0A259&compId=ACTT2S-800E.pdf?ci_sign=02805e9f71d4f8934a828b81c1963bcf8997af54 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
ACTT2S-800E,118
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 343 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.55 грн
14+29.04 грн
25+25.85 грн
100+21.88 грн
250+19.81 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BYC15M-650PQ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D1A321A22E40D4&compId=BYC15M-650PQ.pdf?ci_sign=869c7ba9e5bdd3ffa845f971cb4579e130bee32b
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
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P1KSMBJ68CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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SMDJ40AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
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BT155W-1400TQ BT155W-1400T.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Case: SOT429; TO247-3
Mounting: THT
Max. off-state voltage: 1.4kV
Load current: 50A
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50mA
Max. load current: 79A
Max. forward impulse current: 715A
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SM8S43CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
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ESDALD18BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDE1F9962920C8&compId=ESDALD18BC.pdf?ci_sign=a3f9bf3ae87dd08c8348e01ebd9b9c22cd5da5aa
ESDALD18BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 18V
Breakdown voltage: 19V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Version: ESD
Case: SOD323
Manufacturer series: LD
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ESDALD12BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD12BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Application: universal
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 12V
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.35kW
Case: SOD323
Semiconductor structure: bidirectional
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P6SMBJ64CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BTA204-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829264EE0CC9C259&compId=BTA204-800E.pdf?ci_sign=4094da1a392bee596b128267c8e14d4ba3fdf09c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA204-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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WSJM65R170XQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E36C1BA78960D6&compId=WSJM65R170XQ.pdf?ci_sign=5747ac009b72ff18769d17f6f7dcfe2f9d093752
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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ACTT2S-800ETNJ actt2s-800etn.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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ACTT4S-800E,118 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF1A0DF366A0D3&compId=ACTT4S-800E.pdf?ci_sign=61a3631da004dd589c7e85f1d96b66b298a432c8
ACTT4S-800E,118
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Case: DPAK
Mounting: SMD
Type of thyristor: AC switch
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 2201 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+35.98 грн
15+28.32 грн
100+19.97 грн
250+19.01 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BYV30B-600PJ byv30b-600p.pdf
BYV30B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
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BYV25F-600,127 byv25f-600.pdf
BYV25F-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Case: SOD59; TO220AC
Reverse recovery time: 35ns
Load current: 5A
Max. forward voltage: 1.7V
Max. forward impulse current: 66A
Max. off-state voltage: 0.6kV
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BT139-800.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D2FDA6B36259&compId=BT139-800.pdf?ci_sign=24bbac5cefa6e21f9d6aa10618d78f3034248c8a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT139-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BT136-600E pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F1D642DBC259&compId=BT136-600E.pdf?ci_sign=6ef8137891e57a799d642ae94a5dde01e927594c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT136-600E
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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OT412,115
OT412,115
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 776 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
26+16.53 грн
32+12.57 грн
100+11.06 грн
250+10.66 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
BUJ105A,127
BUJ105A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: NPN
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector current: 8A
Current gain: 13...36
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
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