Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6043) > Сторінка 99 з 101

Обрати Сторінку:   [  << Попередня Сторінка ]  1 10 20 30 40 50 60 70 80 90 94 95 96 97 98 99 100 101  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність Ціна без ПДВ
BYC5-1200PQ BYC5-1200PQ WeEn Semiconductors BYC5-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Kind of package: tube
Reverse recovery time: 42ns
Features of semiconductor devices: superfast switching
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BYC5B-600,118 BYC5B-600,118 WeEn Semiconductors BYC5B-600.pdf PHGLS23444-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 44A
Case: D2PAK; SOT404
Max. forward voltage: 2.2V
Reverse recovery time: 30ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC5DX-500,127 BYC5DX-500,127 WeEn Semiconductors BYC5DX-500.pdf PHGLS23038-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 40A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.15V
Reverse recovery time: 16ns
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BYC5X-600,127 BYC5X-600,127 WeEn Semiconductors BYC5X-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 44A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.2V
Reverse recovery time: 30ns
товару немає в наявності
В кошику  од. на суму  грн.
BT258U-600R,127 BT258U-600R,127 WeEn Semiconductors BT258U-600R.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товару немає в наявності
 Мінімальне замовлення: 3750 шт
В кошику  од. на суму  грн.
BT258X-500R,127 BT258X-500R,127 WeEn Semiconductors BT258X-500R.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
BT258X-600R,127 BT258X-600R,127 WeEn Semiconductors BT258X-600R.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BT258X-800R,127 BT258X-800R,127 WeEn Semiconductors BT258X-800R.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTA206X-800CT,127 BTA206X-800CT,127 WeEn Semiconductors BTA206X-800CT%20Product%20Rev.04.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
BTA206X-800CT/DG BTA206X-800CT/DG WeEn Semiconductors BTA206x-800CT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTA216B-800B,118 BTA216B-800B,118 WeEn Semiconductors BTA216B_500B&600B&800B.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors BTA216B-600D.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 601 шт:
термін постачання 14-30 дні (днів)
7+67.61 грн
8+55.99 грн
25+50.06 грн
100+44.97 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
BTA216-600D,127 BTA216-600D,127 WeEn Semiconductors BTA216-600D.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTA216-600B/DG,127 BTA216-600B/DG,127 WeEn Semiconductors BTA216_500B&600B&800B.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA216-600B,127 BTA216-600B,127 WeEn Semiconductors BTA216_500B&600B&800B.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA216-600BT,127 BTA216-600BT,127 WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA216-600E,127 BTA216-600E,127 WeEn Semiconductors BTA216-600E.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA216-600F,127 BTA216-600F,127 WeEn Semiconductors BTA216-600F.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTA216B-600B,118 BTA216B-600B,118 WeEn Semiconductors BTA216B_500B&600B&800B.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA216B-600E,118 BTA216B-600E,118 WeEn Semiconductors BTA216B-600E.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA216B-600F,118 BTA216B-600F,118 WeEn Semiconductors BTA216B-600F.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ60CAJ SMBJ60CAJ WeEn Semiconductors SMBJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товару немає в наявності
В кошику  од. на суму  грн.
BYQ72EK-200Q BYQ72EK-200Q WeEn Semiconductors Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 200A; SOT1259,TO3P
Semiconductor structure: common cathode; double
Type of diode: rectifying
Mounting: THT
Case: SOT1259; TO3P
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 0.78V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 200A
Max. off-state voltage: 200V
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
5.0SMDJ43CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ESDHD03UFX WeEn Semiconductors ESDHDxxUF%20Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
ESDHD05UFX WeEn Semiconductors ESDHD05UF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
ESDALD05BCX ESDALD05BCX WeEn Semiconductors ESDALDxxBC.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; ESD; SOD323; Ch: 1
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Mounting: SMD
Breakdown voltage: 6.5V
Manufacturer series: LD
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Version: ESD
товару немає в наявності
 Мінімальне замовлення: 90000 шт
В кошику  од. на суму  грн.
ESDALD05UD4X ESDALD05UD4X WeEn Semiconductors ESDALD05UD4.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; ESD; SOT23-6; Ch: 4
Application: USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: SOT23-6
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Breakdown voltage: 6V
Manufacturer series: LD
Max. forward impulse current: 5.5A
Peak pulse power dissipation: 88W
Version: ESD
товару немає в наявності
 Мінімальне замовлення: 90000 шт
В кошику  од. на суму  грн.
ESDALD05UJ2X WeEn Semiconductors ESDALD05UJ2.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; ESD; SOT143; Ch: 2; LD
Application: USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: SOT143
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 6V
Manufacturer series: LD
Max. forward impulse current: 8A
Peak pulse power dissipation: 136W
Version: ESD
товару немає в наявності
 Мінімальне замовлення: 90000 шт
В кошику  од. на суму  грн.
BUJ100,412 BUJ100,412 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: bulk
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
WNSCM80120R6Q WeEn Semiconductors WNSCM80120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику  од. на суму  грн.
BYR29-800,127 BYR29-800,127 WeEn Semiconductors Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.95V
Reverse recovery time: 75ns
на замовлення 540 шт:
термін постачання 14-30 дні (днів)
8+57.56 грн
14+31.73 грн
25+28.85 грн
100+25.28 грн
500+23.08 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
BYC10DX-600,127 BYC10DX-600,127 WeEn Semiconductors BYC10DX-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
на замовлення 925 шт:
термін постачання 14-30 дні (днів)
9+53.91 грн
14+30.54 грн
50+28.25 грн
500+28.08 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
BYC10B-600,118 BYC10B-600,118 WeEn Semiconductors BYC10B-600.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
BYC10X-600PQ BYC10X-600PQ WeEn Semiconductors byc10x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC10-600PQ BYC10-600PQ WeEn Semiconductors BYC10-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; Ifsm: 150A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 2V
Max. load current: 20A
Reverse recovery time: 18ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC10-600CT,127 BYC10-600CT,127 WeEn Semiconductors BYC10-600CT.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; Ifsm: 40A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1.4V
Max. load current: 10A
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
товару немає в наявності
В кошику  од. на суму  грн.
BYC10D-600,127 BYC10D-600,127 WeEn Semiconductors BYC10D-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BYC10X-600,127 BYC10X-600,127 WeEn Semiconductors Discrete%20Selection%20Guide%202011.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC75W-1200PQ BYC75W-1200PQ WeEn Semiconductors byc75w-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 75A; tube; Ifsm: 660A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 75A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 660A
Kind of package: tube
Reverse recovery time: 85ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC15-1200PQ BYC15-1200PQ WeEn Semiconductors BYC15-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 180A
Kind of package: tube
Reverse recovery time: 61ns
Features of semiconductor devices: superfast switching
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BYC40W-1200PQ BYC40W-1200PQ WeEn Semiconductors BYC40W-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; tube; Ifsm: 300A; TO247-2; 91ns
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Max. forward impulse current: 0.3kA
Kind of package: tube
Reverse recovery time: 91ns
Features of semiconductor devices: superfast switching
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
BYC60W-1200PQ BYC60W-1200PQ WeEn Semiconductors BYC60W-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 550A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 0.55kA
Kind of package: tube
Reverse recovery time: 55ns
товару немає в наявності
В кошику  од. на суму  грн.
BYR5D-1200PJ BYR5D-1200PJ WeEn Semiconductors byr5d-1200p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
товару немає в наявності
В кошику  од. на суму  грн.
BTA425X-800BQ BTA425X-800BQ WeEn Semiconductors BTA425X-800B.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
BTA425X-800BT/L02Q BTA425X-800BT/L02Q WeEn Semiconductors BTA425X-800BT.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 275A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA425Y-800CTQ BTA425Y-800CTQ WeEn Semiconductors BTA425Y-800CT.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BT139-800E.127 BT139-800E.127 WeEn Semiconductors BT139-800E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
SMDJ30AJ WeEn Semiconductors SMDJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Case: SMC
Leakage current: 1µA
товару немає в наявності
В кошику  од. на суму  грн.
WNSC2M150120B76J WeEn Semiconductors WNSC2M150120B76J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 20.3A; Idm: 58A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20.3A
Pulsed drain current: 58A
Power dissipation: 231W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
WNSC2M150120W6Q WeEn Semiconductors WNSC2M150120W6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16.5A
Pulsed drain current: 46A
Power dissipation: 153W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
MAC223A8X,127 MAC223A8X,127 WeEn Semiconductors mac223a8x.pdf Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Max. forward impulse current: 190A
Gate current: 50/75mA
Technology: 4Q
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 20A
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
на замовлення 276 шт:
термін постачання 14-30 дні (днів)
5+106.90 грн
10+85.69 грн
100+67.87 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
BTA310-600D,127 BTA310-600D,127 WeEn Semiconductors BTA310-600D.pdf Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 5mA; Ifsm: 85A; 3Q,Hi-Com
Kind of package: tube
Mounting: THT
Features of semiconductor devices: sensitive gate
Case: TO220AB
Type of thyristor: triac
Gate current: 5mA
Max. load current: 10A
Max. forward impulse current: 85A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику  од. на суму  грн.
BTA310-600E,127 BTA310-600E,127 WeEn Semiconductors bta310-600e.pdf Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Kind of package: tube
Mounting: THT
Features of semiconductor devices: sensitive gate
Case: TO220AB
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Max. forward impulse current: 85A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику  од. на суму  грн.
BTA310X-600E,127 BTA310X-600E,127 WeEn Semiconductors bta310x-600e.pdf Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Kind of package: tube
Mounting: THT
Features of semiconductor devices: sensitive gate
Case: TO220FP
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Max. forward impulse current: 85A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTA212B-800B,118 BTA212B-800B,118 WeEn Semiconductors BTA212B-x00B_ser.pdf Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 5600 шт
В кошику  од. на суму  грн.
ESDALD36BCX ESDALD36BCX WeEn Semiconductors ESDALDxxBC.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; ESD; SOD323; Ch: 1; LD
Manufacturer series: LD
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Mounting: SMD
Breakdown voltage: 38V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 36V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
товару немає в наявності
 Мінімальне замовлення: 90000 шт
В кошику  од. на суму  грн.
WNSC2D021200D6J WNSC2D021200D6J WeEn Semiconductors WNSC2D021200D6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Max. forward impulse current: 26A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BT137X-800.127 BT137X-800.127 WeEn Semiconductors BT137X-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику  од. на суму  грн.
BTA2008-600E,412 BTA2008-600E,412 WeEn Semiconductors PHGLS25735-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 9A
Gate current: 10mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Kind of package: bulk
Case: TO92
Type of thyristor: triac
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BYC5-1200PQ BYC5-1200P.pdf
BYC5-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Kind of package: tube
Reverse recovery time: 42ns
Features of semiconductor devices: superfast switching
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BYC5B-600,118 BYC5B-600.pdf PHGLS23444-1.pdf?t.download=true&u=5oefqw
BYC5B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 44A
Case: D2PAK; SOT404
Max. forward voltage: 2.2V
Reverse recovery time: 30ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC5DX-500,127 BYC5DX-500.pdf PHGLS23038-1.pdf?t.download=true&u=5oefqw
BYC5DX-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 40A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.15V
Reverse recovery time: 16ns
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BYC5X-600,127 BYC5X-600.pdf
BYC5X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 44A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.2V
Reverse recovery time: 30ns
товару немає в наявності
В кошику  од. на суму  грн.
BT258U-600R,127 BT258U-600R.pdf
BT258U-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товару немає в наявності
Мінімальне замовлення: 3750 шт
В кошику  од. на суму  грн.
BT258X-500R,127 BT258X-500R.pdf
BT258X-500R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
BT258X-600R,127 BT258X-600R.pdf
BT258X-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BT258X-800R,127 BT258X-800R.pdf
BT258X-800R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTA206X-800CT,127 BTA206X-800CT%20Product%20Rev.04.pdf
BTA206X-800CT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
BTA206X-800CT/DG BTA206x-800CT.pdf _ween_psg2020.pdf
BTA206X-800CT/DG
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTA216B-800B,118 BTA216B_500B&600B&800B.pdf
BTA216B-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA216B-600D,118 BTA216B-600D.pdf
BTA216B-600D,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 601 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+67.61 грн
8+55.99 грн
25+50.06 грн
100+44.97 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
BTA216-600D,127 BTA216-600D.pdf
BTA216-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTA216-600B/DG,127 BTA216_500B&600B&800B.pdf
BTA216-600B/DG,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA216-600B,127 BTA216_500B&600B&800B.pdf
BTA216-600B,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA216-600BT,127
BTA216-600BT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA216-600E,127 BTA216-600E.pdf
BTA216-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA216-600F,127 BTA216-600F.pdf _ween_psg2020.pdf
BTA216-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTA216B-600B,118 BTA216B_500B&600B&800B.pdf
BTA216B-600B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA216B-600E,118 BTA216B-600E.pdf
BTA216B-600E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA216B-600F,118 BTA216B-600F.pdf
BTA216B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ60CAJ SMBJ Series.pdf
SMBJ60CAJ
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товару немає в наявності
В кошику  од. на суму  грн.
BYQ72EK-200Q
BYQ72EK-200Q
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 200A; SOT1259,TO3P
Semiconductor structure: common cathode; double
Type of diode: rectifying
Mounting: THT
Case: SOT1259; TO3P
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 0.78V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 200A
Max. off-state voltage: 200V
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
5.0SMDJ43CAJ 5.0SMDJ.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ESDHD03UFX ESDHDxxUF%20Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
ESDHD05UFX ESDHD05UF.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
ESDALD05BCX ESDALDxxBC.pdf
ESDALD05BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; ESD; SOD323; Ch: 1
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Mounting: SMD
Breakdown voltage: 6.5V
Manufacturer series: LD
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Version: ESD
товару немає в наявності
Мінімальне замовлення: 90000 шт
В кошику  од. на суму  грн.
ESDALD05UD4X ESDALD05UD4.pdf
ESDALD05UD4X
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; ESD; SOT23-6; Ch: 4
Application: USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: SOT23-6
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Breakdown voltage: 6V
Manufacturer series: LD
Max. forward impulse current: 5.5A
Peak pulse power dissipation: 88W
Version: ESD
товару немає в наявності
Мінімальне замовлення: 90000 шт
В кошику  од. на суму  грн.
ESDALD05UJ2X ESDALD05UJ2.pdf
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; ESD; SOT143; Ch: 2; LD
Application: USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: SOT143
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 6V
Manufacturer series: LD
Max. forward impulse current: 8A
Peak pulse power dissipation: 136W
Version: ESD
товару немає в наявності
Мінімальне замовлення: 90000 шт
В кошику  од. на суму  грн.
BUJ100,412
BUJ100,412
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: bulk
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
WNSCM80120R6Q WNSCM80120R6Q.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику  од. на суму  грн.
BYR29-800,127
BYR29-800,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.95V
Reverse recovery time: 75ns
на замовлення 540 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+57.56 грн
14+31.73 грн
25+28.85 грн
100+25.28 грн
500+23.08 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
BYC10DX-600,127 BYC10DX-600.pdf
BYC10DX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
на замовлення 925 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+53.91 грн
14+30.54 грн
50+28.25 грн
500+28.08 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
BYC10B-600,118 BYC10B-600.pdf _ween_psg2020.pdf
BYC10B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
BYC10X-600PQ byc10x-600p.pdf
BYC10X-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC10-600PQ BYC10-600P.pdf
BYC10-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; Ifsm: 150A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 2V
Max. load current: 20A
Reverse recovery time: 18ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC10-600CT,127 BYC10-600CT.pdf
BYC10-600CT,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; Ifsm: 40A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1.4V
Max. load current: 10A
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
товару немає в наявності
В кошику  од. на суму  грн.
BYC10D-600,127 BYC10D-600.pdf
BYC10D-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BYC10X-600,127 Discrete%20Selection%20Guide%202011.pdf
BYC10X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC75W-1200PQ byc75w-1200p.pdf
BYC75W-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 75A; tube; Ifsm: 660A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 75A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 660A
Kind of package: tube
Reverse recovery time: 85ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC15-1200PQ BYC15-1200P.pdf
BYC15-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 180A
Kind of package: tube
Reverse recovery time: 61ns
Features of semiconductor devices: superfast switching
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BYC40W-1200PQ BYC40W-1200P.pdf
BYC40W-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; tube; Ifsm: 300A; TO247-2; 91ns
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Max. forward impulse current: 0.3kA
Kind of package: tube
Reverse recovery time: 91ns
Features of semiconductor devices: superfast switching
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
BYC60W-1200PQ BYC60W-1200P.pdf
BYC60W-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 550A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 0.55kA
Kind of package: tube
Reverse recovery time: 55ns
товару немає в наявності
В кошику  од. на суму  грн.
BYR5D-1200PJ byr5d-1200p.pdf
BYR5D-1200PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
товару немає в наявності
В кошику  од. на суму  грн.
BTA425X-800BQ BTA425X-800B.pdf
BTA425X-800BQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
BTA425X-800BT/L02Q BTA425X-800BT.pdf
BTA425X-800BT/L02Q
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 275A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA425Y-800CTQ BTA425Y-800CT.pdf
BTA425Y-800CTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BT139-800E.127 BT139-800E.pdf _ween_psg2020.pdf
BT139-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
SMDJ30AJ SMDJ Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Case: SMC
Leakage current: 1µA
товару немає в наявності
В кошику  од. на суму  грн.
WNSC2M150120B76J WNSC2M150120B76J.pdf
Виробник: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 20.3A; Idm: 58A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20.3A
Pulsed drain current: 58A
Power dissipation: 231W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
WNSC2M150120W6Q WNSC2M150120W6Q.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16.5A
Pulsed drain current: 46A
Power dissipation: 153W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
MAC223A8X,127 mac223a8x.pdf
MAC223A8X,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Max. forward impulse current: 190A
Gate current: 50/75mA
Technology: 4Q
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 20A
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
на замовлення 276 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+106.90 грн
10+85.69 грн
100+67.87 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
BTA310-600D,127 BTA310-600D.pdf
BTA310-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 5mA; Ifsm: 85A; 3Q,Hi-Com
Kind of package: tube
Mounting: THT
Features of semiconductor devices: sensitive gate
Case: TO220AB
Type of thyristor: triac
Gate current: 5mA
Max. load current: 10A
Max. forward impulse current: 85A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику  од. на суму  грн.
BTA310-600E,127 bta310-600e.pdf
BTA310-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Kind of package: tube
Mounting: THT
Features of semiconductor devices: sensitive gate
Case: TO220AB
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Max. forward impulse current: 85A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику  од. на суму  грн.
BTA310X-600E,127 bta310x-600e.pdf
BTA310X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Kind of package: tube
Mounting: THT
Features of semiconductor devices: sensitive gate
Case: TO220FP
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Max. forward impulse current: 85A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTA212B-800B,118 BTA212B-x00B_ser.pdf
BTA212B-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5600 шт
В кошику  од. на суму  грн.
ESDALD36BCX ESDALDxxBC.pdf
ESDALD36BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; ESD; SOD323; Ch: 1; LD
Manufacturer series: LD
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Mounting: SMD
Breakdown voltage: 38V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 36V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
товару немає в наявності
Мінімальне замовлення: 90000 шт
В кошику  од. на суму  грн.
WNSC2D021200D6J WNSC2D021200D6J.pdf
WNSC2D021200D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Max. forward impulse current: 26A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BT137X-800.127 BT137X-800.pdf _ween_psg2020.pdf
BT137X-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику  од. на суму  грн.
BTA2008-600E,412 PHGLS25735-1.pdf?t.download=true&u=5oefqw
BTA2008-600E,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 9A
Gate current: 10mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Kind of package: bulk
Case: TO92
Type of thyristor: triac
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 10 20 30 40 50 60 70 80 90 94 95 96 97 98 99 100 101  [ Наступна Сторінка >> ]