Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6001) > Сторінка 99 з 101

Обрати Сторінку:   [  << Попередня Сторінка ]  1 10 20 30 40 50 60 70 80 90 94 95 96 97 98 99 100 101  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
BTA208S-800B,118 BTA208S-800B,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2BA851CCE0259&compId=BTA208S-800B.pdf?ci_sign=ea3fc467ec030d7c6be7753fed7172ca79994f49 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Case: D2PAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Mounting: SMD
Type of thyristor: triac
Gate current: 50mA
Max. load current: 8A
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
BTA208X-800B/L02Q WeEn Semiconductors bta208x-800b.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Case: TO220FP
Features of semiconductor devices: sensitive gate
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Max. load current: 8A
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
BT137S-600D.118 BT137S-600D.118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782911B8DD7B38259&compId=BT137S-600D.pdf?ci_sign=964b002a16fe852728e3a39cb35b27f8e5187d6f pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
P6SMAL36AX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
товару немає в наявності
В кошику  од. на суму  грн.
P6SMAL75AX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
товару немає в наявності
В кошику  од. на суму  грн.
BYT28-300,127 BYT28-300,127 WeEn Semiconductors byt28-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 60ns
товару немає в наявності
В кошику  од. на суму  грн.
BTA445Z-800BTQ WeEn Semiconductors bta445z-800ct.pdf Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
WNSC5D20650X6Q WNSC5D20650X6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA4120BF3480D5&compId=WNSC5D20650X6Q.pdf?ci_sign=321d8d1fae2a2526cf4826ff91f8107c7a320c22 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
на замовлення 924 шт:
термін постачання 21-30 дні (днів)
3+160.72 грн
5+133.36 грн
25+118.28 грн
100+106.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
WNS20S100CBJ WNS20S100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF60287D9DB60C7&compId=WNS20S100CB.pdf?ci_sign=d8fdda0e275521bc549ae6917ce2513a7fa75ed2 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: reel; tape
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
9+49.58 грн
10+40.88 грн
25+36.67 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BTA308Y-800C0TQ BTA308Y-800C0TQ WeEn Semiconductors bta308y-800c0t.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1551 шт:
термін постачання 21-30 дні (днів)
7+61.55 грн
13+31.59 грн
25+27.15 грн
39+24.05 грн
108+22.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA308X-800B0Q BTA308X-800B0Q WeEn Semiconductors bta308x-800b0.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA308S-800ETJ WeEn Semiconductors bta308s-800et.pdf Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA308X-800C0,127 WeEn Semiconductors BTA308X-800C0.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA308X-800ETQ WeEn Semiconductors bta308x-800et.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA308Y-800ETQ WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
EC103D1,412 EC103D1,412 WeEn Semiconductors ec103d1.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 3µA
Mounting: THT
Kind of package: bulk
Turn-on time: 2µs
Load current: 0.5A
Max. forward impulse current: 8A
товару немає в наявності
В кошику  од. на суму  грн.
EC103D1WX EC103D1WX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7E483968B874A&compId=EC103D1W.pdf?ci_sign=7c99ff9b7f0096d67b30788cd4b7149ad9a3a33f pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
16+27.36 грн
18+23.02 грн
20+20.72 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
EC103D1,116 EC103D1,116 WeEn Semiconductors ec103d1.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
EC103D1WF WeEn Semiconductors Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC20650W-AQ NXPSC20650W-AQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
WNSC6D20650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
товару немає в наявності
В кошику  од. на суму  грн.
WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BYV32E-300PQ BYV32E-300PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD95B955CDB060C4&compId=BYV32E-300P.pdf?ci_sign=f7f7fbbc6a96b744d3417cbff690b8631c544806 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
товару немає в наявності
В кошику  од. на суму  грн.
BYV32EB-200PJ BYV32EB-200PJ WeEn Semiconductors byv32eb-200p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BYV32EB-300PJ BYV32EB-300PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD963EBC3DB120C4&compId=BYV32EB-300P.pdf?ci_sign=44df4d4918ee7b2325f3c599d4aeb56c9a415f47 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BYV32EX-300PQ BYV32EX-300PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD964B10D38520C4&compId=BYV32EX-300P.pdf?ci_sign=4968244df9558922ddf562afb67bf6717b590dab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
товару немає в наявності
В кошику  од. на суму  грн.
5.0SMDJ78CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 5.0SMDJ
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD36BCX ESDALD36BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Manufacturer series: LD
Number of channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
WNSCM80120R6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D04CAD2E0700D4&compId=WNSCM80120R6Q.pdf?ci_sign=cd8c842365da9e18e401af5a828868b59927e4bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику  од. на суму  грн.
WNSC12650T6J WeEn Semiconductors WNSC12650T_0.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 57A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
WNSC12650WQ WNSC12650WQ WeEn Semiconductors WNSC12650W_2.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
WNSC10650T6J WeEn Semiconductors WNSC10650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
WNSC10650WQ WNSC10650WQ WeEn Semiconductors WNSC10650W_0.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 50A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
ACTT10-800CQ WeEn Semiconductors ACTT10-800C.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 10A; Igt: 35mA; TO220AB; THT; tube
Max. off-state voltage: 0.8kV
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate current: 35mA
Max. load current: 10A
Type of thyristor: AC switch
товару немає в наявності
В кошику  од. на суму  грн.
ACTT2S-800E,118 ACTT2S-800E,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2D21B5FD0A259&compId=ACTT2S-800E.pdf?ci_sign=02805e9f71d4f8934a828b81c1963bcf8997af54 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 343 шт:
термін постачання 21-30 дні (днів)
10+44.45 грн
14+28.97 грн
25+25.80 грн
100+21.83 грн
250+19.77 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BYC15M-650PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D1A321A22E40D4&compId=BYC15M-650PQ.pdf?ci_sign=869c7ba9e5bdd3ffa845f971cb4579e130bee32b Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
товару немає в наявності
В кошику  од. на суму  грн.
P1KSMBJ68CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
товару немає в наявності
В кошику  од. на суму  грн.
SMDJ40AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BT155W-1400TQ WeEn Semiconductors BT155W-1400T.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 715A
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
SM8S43CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD18BCX ESDALD18BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDE1F9962920C8&compId=ESDALD18BC.pdf?ci_sign=a3f9bf3ae87dd08c8348e01ebd9b9c22cd5da5aa Category: Protection diodes - arrays
Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 18V
Breakdown voltage: 19V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Version: ESD
Case: SOD323
Manufacturer series: LD
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD12BCX ESDALD12BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Application: universal
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 12V
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.35kW
Case: SOD323
Semiconductor structure: bidirectional
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA204-800E.127 BTA204-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829264EE0CC9C259&compId=BTA204-800E.pdf?ci_sign=4094da1a392bee596b128267c8e14d4ba3fdf09c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
WSJM65R170XQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E36C1BA78960D6&compId=WSJM65R170XQ.pdf?ci_sign=5747ac009b72ff18769d17f6f7dcfe2f9d093752 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
ACTT2S-800ETNJ WeEn Semiconductors actt2s-800etn.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF1A0DF366A0D3&compId=ACTT4S-800E.pdf?ci_sign=61a3631da004dd589c7e85f1d96b66b298a432c8 Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Case: DPAK
Mounting: SMD
Type of thyristor: AC switch
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 2201 шт:
термін постачання 21-30 дні (днів)
12+35.91 грн
15+28.26 грн
100+19.92 грн
250+18.97 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BYV30B-600PJ BYV30B-600PJ WeEn Semiconductors byv30b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BYV25F-600,127 BYV25F-600,127 WeEn Semiconductors byv25f-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Case: SOD59; TO220AC
Reverse recovery time: 35ns
Load current: 5A
Max. forward voltage: 1.7V
Max. forward impulse current: 66A
Max. off-state voltage: 0.6kV
товару немає в наявності
В кошику  од. на суму  грн.
BT139-800.127 BT139-800.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D2FDA6B36259&compId=BT139-800.pdf?ci_sign=24bbac5cefa6e21f9d6aa10618d78f3034248c8a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику  од. на суму  грн.
OT412,115 OT412,115 WeEn Semiconductors Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 776 шт:
термін постачання 21-30 дні (днів)
26+16.50 грн
32+12.54 грн
100+11.03 грн
250+10.80 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
BUJ105A,127 BUJ105A,127 WeEn Semiconductors buj105a.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: TO220AB
Current gain: 13...36
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BUJ105AB,118 WeEn Semiconductors buj105ab.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 125W
Case: D2PAK
Current gain: 13...36
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BUJ105AD,118 WeEn Semiconductors buj105ad_1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: DPAK
Current gain: 13...36
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD15BCX ESDALD15BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 16.5V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Manufacturer series: LD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 8A
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Version: ESD
Case: SOD323
Application: universal
товару немає в наявності
В кошику  од. на суму  грн.
BYV42EB-200,118 BYV42EB-200,118 WeEn Semiconductors byv42e-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD05BCX ESDALD05BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; SOD323; Ch: 1; LD
Application: universal
Peak pulse power dissipation: 0.35kW
Case: SOD323
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Semiconductor structure: bidirectional
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD05UD4X ESDALD05UD4X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDFCCEC63C40C8&compId=ESDALD05UD4.pdf?ci_sign=b98b0c7f6f022c4af3d3487717863fbfdd5a7da9 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; SOT23-6; Ch: 4; LD
Application: USB
Peak pulse power dissipation: 88W
Case: SOT23-6
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 5.5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD05UE2X ESDALD05UE2X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDFA45227D20C8&compId=ESDALD05UE2.pdf?ci_sign=b7e92811dd2dc190ccd859206b47f21b6806b4d2 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; SOT23-3; Ch: 2; LD; ESD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: SOT23-3
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD05UG4X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF63F94FDA0C8&compId=ESDALD05UG4.pdf?ci_sign=7fb6413bc15a8c691660d84c2508478576bffea9 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD; ESD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: DFN2510
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
товару немає в наявності
В кошику  од. на суму  грн.
BTA208S-800B,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2BA851CCE0259&compId=BTA208S-800B.pdf?ci_sign=ea3fc467ec030d7c6be7753fed7172ca79994f49 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA208S-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Case: D2PAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Mounting: SMD
Type of thyristor: triac
Gate current: 50mA
Max. load current: 8A
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
BTA208X-800B/L02Q bta208x-800b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Case: TO220FP
Features of semiconductor devices: sensitive gate
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Max. load current: 8A
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
BT137S-600D.118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782911B8DD7B38259&compId=BT137S-600D.pdf?ci_sign=964b002a16fe852728e3a39cb35b27f8e5187d6f pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT137S-600D.118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
товару немає в наявності
В кошику  од. на суму  грн.
P6SMAL36AX pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
товару немає в наявності
В кошику  од. на суму  грн.
P6SMAL75AX pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
товару немає в наявності
В кошику  од. на суму  грн.
BYT28-300,127 byt28-500.pdf
BYT28-300,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 60ns
товару немає в наявності
В кошику  од. на суму  грн.
BTA445Z-800BTQ bta445z-800ct.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику  од. на суму  грн.
WNSC5D20650X6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA4120BF3480D5&compId=WNSC5D20650X6Q.pdf?ci_sign=321d8d1fae2a2526cf4826ff91f8107c7a320c22
WNSC5D20650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
на замовлення 924 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+160.72 грн
5+133.36 грн
25+118.28 грн
100+106.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
WNS20S100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF60287D9DB60C7&compId=WNS20S100CB.pdf?ci_sign=d8fdda0e275521bc549ae6917ce2513a7fa75ed2
WNS20S100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: reel; tape
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.58 грн
10+40.88 грн
25+36.67 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BTA308Y-800C0TQ bta308y-800c0t.pdf
BTA308Y-800C0TQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1551 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+61.55 грн
13+31.59 грн
25+27.15 грн
39+24.05 грн
108+22.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA308X-800B0Q bta308x-800b0.pdf
BTA308X-800B0Q
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA308S-800ETJ bta308s-800et.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA308X-800C0,127 BTA308X-800C0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA308X-800ETQ bta308x-800et.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BTA308Y-800ETQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
EC103D1,412 ec103d1.pdf
EC103D1,412
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 3µA
Mounting: THT
Kind of package: bulk
Turn-on time: 2µs
Load current: 0.5A
Max. forward impulse current: 8A
товару немає в наявності
В кошику  од. на суму  грн.
EC103D1WX pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7E483968B874A&compId=EC103D1W.pdf?ci_sign=7c99ff9b7f0096d67b30788cd4b7149ad9a3a33f pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
EC103D1WX
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.36 грн
18+23.02 грн
20+20.72 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
EC103D1,116 ec103d1.pdf
EC103D1,116
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
EC103D1WF
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
NXPSC20650W-AQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
NXPSC20650W-AQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
WNSC6D20650B6J pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
товару немає в наявності
В кошику  од. на суму  грн.
WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BYV32E-300PQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD95B955CDB060C4&compId=BYV32E-300P.pdf?ci_sign=f7f7fbbc6a96b744d3417cbff690b8631c544806 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32E-300PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
товару немає в наявності
В кошику  од. на суму  грн.
BYV32EB-200PJ byv32eb-200p.pdf
BYV32EB-200PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BYV32EB-300PJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD963EBC3DB120C4&compId=BYV32EB-300P.pdf?ci_sign=44df4d4918ee7b2325f3c599d4aeb56c9a415f47 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EB-300PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BYV32EX-300PQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD964B10D38520C4&compId=BYV32EX-300P.pdf?ci_sign=4968244df9558922ddf562afb67bf6717b590dab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EX-300PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
товару немає в наявності
В кошику  од. на суму  грн.
5.0SMDJ78CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 5.0SMDJ
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD36BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD36BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Manufacturer series: LD
Number of channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
WNSCM80120R6Q pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D04CAD2E0700D4&compId=WNSCM80120R6Q.pdf?ci_sign=cd8c842365da9e18e401af5a828868b59927e4bb
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику  од. на суму  грн.
WNSC12650T6J WNSC12650T_0.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 57A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
WNSC12650WQ WNSC12650W_2.pdf
WNSC12650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
WNSC10650T6J WNSC10650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
WNSC10650WQ WNSC10650W_0.pdf
WNSC10650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 50A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
ACTT10-800CQ ACTT10-800C.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 10A; Igt: 35mA; TO220AB; THT; tube
Max. off-state voltage: 0.8kV
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate current: 35mA
Max. load current: 10A
Type of thyristor: AC switch
товару немає в наявності
В кошику  од. на суму  грн.
ACTT2S-800E,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2D21B5FD0A259&compId=ACTT2S-800E.pdf?ci_sign=02805e9f71d4f8934a828b81c1963bcf8997af54 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
ACTT2S-800E,118
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 343 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.45 грн
14+28.97 грн
25+25.80 грн
100+21.83 грн
250+19.77 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BYC15M-650PQ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D1A321A22E40D4&compId=BYC15M-650PQ.pdf?ci_sign=869c7ba9e5bdd3ffa845f971cb4579e130bee32b
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
товару немає в наявності
В кошику  од. на суму  грн.
P1KSMBJ68CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
товару немає в наявності
В кошику  од. на суму  грн.
SMDJ40AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BT155W-1400TQ BT155W-1400T.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 715A
Turn-on time: 2µs
товару немає в наявності
В кошику  од. на суму  грн.
SM8S43CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD18BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDE1F9962920C8&compId=ESDALD18BC.pdf?ci_sign=a3f9bf3ae87dd08c8348e01ebd9b9c22cd5da5aa
ESDALD18BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 18V
Breakdown voltage: 19V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Version: ESD
Case: SOD323
Manufacturer series: LD
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD12BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD12BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Application: universal
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 12V
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.35kW
Case: SOD323
Semiconductor structure: bidirectional
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ64CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTA204-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829264EE0CC9C259&compId=BTA204-800E.pdf?ci_sign=4094da1a392bee596b128267c8e14d4ba3fdf09c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA204-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
WSJM65R170XQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E36C1BA78960D6&compId=WSJM65R170XQ.pdf?ci_sign=5747ac009b72ff18769d17f6f7dcfe2f9d093752
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
ACTT2S-800ETNJ actt2s-800etn.pdf
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ACTT4S-800E,118 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF1A0DF366A0D3&compId=ACTT4S-800E.pdf?ci_sign=61a3631da004dd589c7e85f1d96b66b298a432c8
ACTT4S-800E,118
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Case: DPAK
Mounting: SMD
Type of thyristor: AC switch
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 2201 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+35.91 грн
15+28.26 грн
100+19.92 грн
250+18.97 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BYV30B-600PJ byv30b-600p.pdf
BYV30B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BYV25F-600,127 byv25f-600.pdf
BYV25F-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Case: SOD59; TO220AC
Reverse recovery time: 35ns
Load current: 5A
Max. forward voltage: 1.7V
Max. forward impulse current: 66A
Max. off-state voltage: 0.6kV
товару немає в наявності
В кошику  од. на суму  грн.
BT139-800.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D2FDA6B36259&compId=BT139-800.pdf?ci_sign=24bbac5cefa6e21f9d6aa10618d78f3034248c8a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT139-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику  од. на суму  грн.
OT412,115
OT412,115
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 776 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
26+16.50 грн
32+12.54 грн
100+11.03 грн
250+10.80 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
BUJ105A,127 buj105a.pdf
BUJ105A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: TO220AB
Current gain: 13...36
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
BUJ105AB,118 buj105ab.pdf
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 125W
Case: D2PAK
Current gain: 13...36
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BUJ105AD,118 buj105ad_1.pdf
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: DPAK
Current gain: 13...36
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD15BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD15BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.5V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Manufacturer series: LD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 8A
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Version: ESD
Case: SOD323
Application: universal
товару немає в наявності
В кошику  од. на суму  грн.
BYV42EB-200,118 byv42e-200.pdf
BYV42EB-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD05BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD05BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; SOD323; Ch: 1; LD
Application: universal
Peak pulse power dissipation: 0.35kW
Case: SOD323
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Semiconductor structure: bidirectional
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD05UD4X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDFCCEC63C40C8&compId=ESDALD05UD4.pdf?ci_sign=b98b0c7f6f022c4af3d3487717863fbfdd5a7da9
ESDALD05UD4X
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; SOT23-6; Ch: 4; LD
Application: USB
Peak pulse power dissipation: 88W
Case: SOT23-6
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 5.5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD05UE2X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDFA45227D20C8&compId=ESDALD05UE2.pdf?ci_sign=b7e92811dd2dc190ccd859206b47f21b6806b4d2
ESDALD05UE2X
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; SOT23-3; Ch: 2; LD; ESD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: SOT23-3
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
товару немає в наявності
В кошику  од. на суму  грн.
ESDALD05UG4X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF63F94FDA0C8&compId=ESDALD05UG4.pdf?ci_sign=7fb6413bc15a8c691660d84c2508478576bffea9
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD; ESD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: DFN2510
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 10 20 30 40 50 60 70 80 90 94 95 96 97 98 99 100 101  [ Наступна Сторінка >> ]