Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5974) > Сторінка 99 з 100
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ESDALD05UE2X | WeEn Semiconductors |
 Category: Transil diodes - arraysDescription: Diode: diode arrays; 6V; 4A; 60W; unidirectional; SOT23-3; Ch: 2 Type of diode: diode arrays Breakdown voltage: 6V Max. forward impulse current: 4A Peak pulse power dissipation: 60W Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 2 Kind of package: reel; tape Manufacturer series: LD |
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| ESDALD05UJ2X | WeEn Semiconductors |
Category: Transil diodes - arrays Description: Diode: diode arrays; 6V; 8A; 136W; unidirectional; SOT143; Ch: 2 Type of diode: diode arrays Breakdown voltage: 6V Max. forward impulse current: 8A Peak pulse power dissipation: 136W Semiconductor structure: unidirectional Mounting: SMD Case: SOT143 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 2 Kind of package: reel; tape Manufacturer series: LD |
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BTA140-600.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 190A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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WNSC051200Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 65A Max. forward voltage: 1.4V |
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WNSC2D151200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Max. forward voltage: 1.95V Type of diode: Schottky rectifying Max. forward impulse current: 102A Load current: 15A |
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BTA140-800.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 190A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BT137X-800.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BT136-600 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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| BT300S-600R,118 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 2mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 65A Turn-on time: 2µs |
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BT131-600 | WeEn Semiconductors |
 Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/7mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
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MUR560J | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.35V Max. forward impulse current: 130A Kind of package: reel; tape |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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BYV30-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; SOD59,TO220AC Mounting: THT Case: SOD59; TO220AC Kind of package: tube Max. forward impulse current: 290A Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 0.98V Load current: 30A Semiconductor structure: single diode |
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BYV30W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2 Mounting: THT Case: TO247-2 Kind of package: tube Max. forward impulse current: 290A Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 0.98V Load current: 30A Semiconductor structure: single diode |
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BYV30W-600PT2Q | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2 Mounting: THT Case: TO247-2 Kind of package: tube Max. forward impulse current: 290A Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 0.98V Load current: 30A Semiconductor structure: single diode |
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BYV40W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 40A; tube; Ifsm: 290A; TO247-2 Max. off-state voltage: 0.6kV Max. forward voltage: 0.97V Load current: 40A Semiconductor structure: single diode Max. forward impulse current: 290A Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Mounting: THT Case: TO247-2 |
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BYC15-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 180A Case: SOD59; TO220AC Max. forward voltage: 2V Reverse recovery time: 61ns |
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| BYC15M-650PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 15A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: SOD59; TO220AC Max. forward voltage: 2.3V Reverse recovery time: 14ns |
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BYC15X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 19ns |
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WNS40H100CBJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 380A Max. forward voltage: 0.68V |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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WNS40H100CGQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: I2PAK Kind of package: tube Max. forward impulse current: 380A Max. forward voltage: 0.68V |
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WNS40H100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 380A Max. forward voltage: 0.68V |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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| ACTT8-800CTNQ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; TO220AB; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube |
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| ACTT4S-800C,118 | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape |
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| ACTT6B-800CNJ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 35mA; D2PAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape |
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ACTT6B-800E,118 | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; D2PAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Case: D2PAK Gate current: 10mA Mounting: SMD Kind of package: reel; tape |
на замовлення 835 шт: термін постачання 21-30 дні (днів) |
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| ACTT6G-800E,127 | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Case: I2PAK Gate current: 10mA Mounting: THT Kind of package: tube |
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| ACTT8B-800CTNJ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; D2PAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape |
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BT139-800E.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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| WNSC2D10650BJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Technology: SiC Case: D2PAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 2.2V Max. load current: 20A Type of diode: Schottky rectifying Max. forward impulse current: 50A Load current: 10A |
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WNSC2D10650DJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 50A Load current: 10A |
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| WNSC2D10650TJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 50A Load current: 10A |
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WNSC2D10650XQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Technology: SiC Case: TO220FP-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 50A Load current: 10A |
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| WNSC6D10650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 80A Max. forward voltage: 1.65V |
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WNSC6D10650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 75A |
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MUR320J | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 160A Case: SMC |
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BYV5ED-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DPAK Max. forward impulse current: 70A Kind of package: reel; tape |
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BYV40E-150,115 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 750mAx2; 25ns; SOT223; Ufmax: 1V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1V Case: SOT223 Max. load current: 1.5A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 6.6A Reverse recovery time: 25ns Load current: 750mA x2 Max. off-state voltage: 150V |
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BYV415W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; TO247-3 Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 1.1V Case: TO247-3 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Load current: 15A x2 Max. off-state voltage: 0.6kV |
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BYV430W-300PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 1V Case: TO247-3 Max. load current: 30A Semiconductor structure: common cathode; double Max. forward impulse current: 330A Reverse recovery time: 50ns Load current: 15A x2 Max. off-state voltage: 300V |
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BYV430W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 2V Case: TO247-3 Max. load current: 60A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 180A Reverse recovery time: 90ns Load current: 30A x2 Max. off-state voltage: 0.6kV |
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BYQ28X-200,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 55A Max. load current: 10A Max. off-state voltage: 200V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: SOD113; TO220FP-2 Max. forward voltage: 1.25V Mounting: THT Load current: 5A x2 |
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BT139-800.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BYT28-300,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 60ns Max. forward impulse current: 55A Max. load current: 10A Max. off-state voltage: 300V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. forward voltage: 1.4V Mounting: THT Load current: 5A x2 |
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BT136-800E.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BYC30B-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V Mounting: SMD Case: D2PAK; SOT404 Max. off-state voltage: 0.6kV Kind of package: reel; tape Max. forward voltage: 2.75V Load current: 30A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 300A Type of diode: rectifying |
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BT137S-600D.118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 5/10mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD |
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| WNSC04650T6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 24A |
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NXPSC046506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 24A |
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NXPSC04650B | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 24A Max. forward voltage: 1.5V |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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NXPSC04650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 24A |
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NXPSC04650D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 24A |
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NXPSC04650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 24A |
товар відсутній |
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WNSC2D04650DJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 24A Load current: 4A |
товар відсутній |
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| WNSC2D04650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Technology: SiC Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 2.2V Max. load current: 8A Type of diode: Schottky rectifying Max. forward impulse current: 24A Load current: 4A |
товар відсутній |
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| WNSC2D04650TJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 24A Load current: 4A |
товар відсутній |
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WNSC2D04650XQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Technology: SiC Case: TO220FP-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 20A Load current: 4A |
товар відсутній |
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| WNSC5D046506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 28A Max. forward voltage: 2.2V |
товар відсутній |
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| WNSC5D04650D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 26A Max. forward voltage: 2.2V |
товар відсутній |
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| WNSC6D046506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 36A Max. forward voltage: 1.55V |
товар відсутній |
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WNSC6D04650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 30A |
товар відсутній |
| ESDALD05UE2X |
|
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 4A; 60W; unidirectional; SOT23-3; Ch: 2
Type of diode: diode arrays
Breakdown voltage: 6V
Max. forward impulse current: 4A
Peak pulse power dissipation: 60W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: LD
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 4A; 60W; unidirectional; SOT23-3; Ch: 2
Type of diode: diode arrays
Breakdown voltage: 6V
Max. forward impulse current: 4A
Peak pulse power dissipation: 60W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: LD
товар відсутній
| ESDALD05UJ2X |
|
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 8A; 136W; unidirectional; SOT143; Ch: 2
Type of diode: diode arrays
Breakdown voltage: 6V
Max. forward impulse current: 8A
Peak pulse power dissipation: 136W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: LD
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 8A; 136W; unidirectional; SOT143; Ch: 2
Type of diode: diode arrays
Breakdown voltage: 6V
Max. forward impulse current: 8A
Peak pulse power dissipation: 136W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: LD
товар відсутній
| BTA140-600.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| WNSC051200Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 65A
Max. forward voltage: 1.4V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 65A
Max. forward voltage: 1.4V
товар відсутній
| WNSC2D151200WQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Type of diode: Schottky rectifying
Max. forward impulse current: 102A
Load current: 15A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Type of diode: Schottky rectifying
Max. forward impulse current: 102A
Load current: 15A
товар відсутній
| BTA140-800.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BT137X-800.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BT136-600 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BT300S-600R,118 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Turn-on time: 2µs
товар відсутній
| BT131-600 | |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
товар відсутній
| MUR560J |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 16.82 грн |
| 26+ | 13.07 грн |
| BYV30-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; SOD59,TO220AC
Mounting: THT
Case: SOD59; TO220AC
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; SOD59,TO220AC
Mounting: THT
Case: SOD59; TO220AC
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
товар відсутній
| BYV30W-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2
Mounting: THT
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2
Mounting: THT
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
товар відсутній
| BYV30W-600PT2Q |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2
Mounting: THT
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2
Mounting: THT
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
товар відсутній
| BYV40W-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; tube; Ifsm: 290A; TO247-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.97V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 290A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; tube; Ifsm: 290A; TO247-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.97V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 290A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
товар відсутній
| BYC15-1200PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
товар відсутній
| BYC15M-650PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
товар відсутній
| BYC15X-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
товар відсутній
| WNS40H100CBJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
на замовлення 450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.54 грн |
| 23+ | 35.98 грн |
| 25+ | 35.92 грн |
| 62+ | 33.99 грн |
| WNS40H100CGQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
товар відсутній
| WNS40H100CQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
на замовлення 970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.69 грн |
| 7+ | 55.73 грн |
| 20+ | 40.59 грн |
| 54+ | 38.53 грн |
| ACTT8-800CTNQ |
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
товар відсутній
| ACTT4S-800C,118 |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| ACTT6B-800CNJ |
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 35mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 35mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| ACTT6B-800E,118 |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
на замовлення 835 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.87 грн |
| 10+ | 36.47 грн |
| 25+ | 32.34 грн |
| 30+ | 26.49 грн |
| 83+ | 25.04 грн |
| ACTT6G-800E,127 |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: I2PAK
Gate current: 10mA
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: I2PAK
Gate current: 10mA
Mounting: THT
Kind of package: tube
товар відсутній
| ACTT8B-800CTNJ |
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| BT139-800E.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| WNSC2D10650BJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 2.2V
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 2.2V
Max. load current: 20A
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
товар відсутній
| WNSC2D10650DJ |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
товар відсутній
| WNSC2D10650TJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
товар відсутній
| WNSC2D10650XQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Load current: 10A
товар відсутній
| WNSC6D10650B6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 80A
Max. forward voltage: 1.65V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 80A
Max. forward voltage: 1.65V
товар відсутній
| WNSC6D10650Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 75A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 75A
товар відсутній
| MUR320J |
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: SMC
товар відсутній
| BYV5ED-600PJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward impulse current: 70A
Kind of package: reel; tape
товар відсутній
| BYV40E-150,115 |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 750mAx2; 25ns; SOT223; Ufmax: 1V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOT223
Max. load current: 1.5A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 6.6A
Reverse recovery time: 25ns
Load current: 750mA x2
Max. off-state voltage: 150V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 750mAx2; 25ns; SOT223; Ufmax: 1V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOT223
Max. load current: 1.5A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 6.6A
Reverse recovery time: 25ns
Load current: 750mA x2
Max. off-state voltage: 150V
товар відсутній
| BYV415W-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; TO247-3
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Load current: 15A x2
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; TO247-3
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Load current: 15A x2
Max. off-state voltage: 0.6kV
товар відсутній
| BYV430W-300PQ |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Reverse recovery time: 50ns
Load current: 15A x2
Max. off-state voltage: 300V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Reverse recovery time: 50ns
Load current: 15A x2
Max. off-state voltage: 300V
товар відсутній
| BYV430W-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 2V
Case: TO247-3
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Reverse recovery time: 90ns
Load current: 30A x2
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 2V
Case: TO247-3
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Reverse recovery time: 90ns
Load current: 30A x2
Max. off-state voltage: 0.6kV
товар відсутній
| BYQ28X-200,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Mounting: THT
Load current: 5A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Mounting: THT
Load current: 5A x2
товар відсутній
| BT139-800.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BYT28-300,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 300V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Mounting: THT
Load current: 5A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 300V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Mounting: THT
Load current: 5A x2
товар відсутній
| BT136-800E.127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BYC30B-600PJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Max. forward voltage: 2.75V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 300A
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Max. forward voltage: 2.75V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 300A
Type of diode: rectifying
товар відсутній
| BT137S-600D.118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
товар відсутній
| WNSC04650T6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 24A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 24A
товар відсутній
| NXPSC046506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 24A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 24A
товар відсутній
| NXPSC04650B |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.79 грн |
| NXPSC04650B6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 24A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 24A
товар відсутній
| NXPSC04650D6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 24A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 24A
товар відсутній
| NXPSC04650X6Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 24A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 24A
товар відсутній
| WNSC2D04650DJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 24A
Load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 24A
Load current: 4A
товар відсутній
| WNSC2D04650Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 2.2V
Max. load current: 8A
Type of diode: Schottky rectifying
Max. forward impulse current: 24A
Load current: 4A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 2.2V
Max. load current: 8A
Type of diode: Schottky rectifying
Max. forward impulse current: 24A
Load current: 4A
товар відсутній
| WNSC2D04650TJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 24A
Load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 24A
Load current: 4A
товар відсутній
| WNSC2D04650XQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 20A
Load current: 4A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 20A
Load current: 4A
товар відсутній
| WNSC5D046506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 28A
Max. forward voltage: 2.2V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 28A
Max. forward voltage: 2.2V
товар відсутній
| WNSC5D04650D6J |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 26A
Max. forward voltage: 2.2V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 26A
Max. forward voltage: 2.2V
товар відсутній
| WNSC6D046506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.55V
товар відсутній
| WNSC6D04650Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 30A
товар відсутній