Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5984) > Сторінка 80 з 100
Фото | Назва | Виробник | Інформація |
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WNSC2D20650CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 50A Max. forward voltage: 1.8V кількість в упаковці: 480 шт |
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WNSC2D301200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. load current: 30A Type of diode: Schottky rectifying Max. forward impulse current: 102A Load current: 15A x2 кількість в упаковці: 600 шт |
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WNSC2D401200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. load current: 40A Type of diode: Schottky rectifying Max. forward impulse current: 125A Load current: 20A x2 кількість в упаковці: 600 шт |
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WNSC2D401200W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Max. forward voltage: 2.5V Max. load current: 80A Type of diode: Schottky rectifying Max. forward impulse current: 350A Load current: 40A кількість в упаковці: 1 шт |
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WNSC2D501200W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Max. forward voltage: 2.5V Max. load current: 100A Type of diode: Schottky rectifying Max. forward impulse current: 420A Load current: 50A кількість в упаковці: 1 шт |
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WNSC2M1K0170WQ | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Pulsed drain current: 20A Power dissipation: 79W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 1Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 240 шт |
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WNSC2M20120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 94A Pulsed drain current: 200A Power dissipation: 750W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 20mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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WNSC2M40120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 100A Power dissipation: 405W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 55mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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WNSC401200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 200A кількість в упаковці: 480 шт |
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WNSC5D046506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 28A Max. forward voltage: 2.2V кількість в упаковці: 1 шт |
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WNSC5D04650D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 26A Max. forward voltage: 2.2V кількість в упаковці: 1 шт |
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WNSC5D06650T6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 12A Semiconductor structure: single diode Max. forward voltage: 2.2V Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 36A кількість в упаковці: 3000 шт |
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WNSC5D20650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Max. load current: 40A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 80A Max. forward voltage: 2.2V кількість в упаковці: 1 шт |
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WNSC6D01650MBJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Max. load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.4V Case: SMB Kind of package: reel; tape Max. forward impulse current: 18A кількість в упаковці: 1 шт |
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WNSC6D046506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 36A Max. forward voltage: 1.55V кількість в упаковці: 1000 шт |
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WNSC6D04650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 30A кількість в упаковці: 3000 шт |
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WNSC6D06650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 46A кількість в упаковці: 3000 шт |
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WNSC6D06650T6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 12A Semiconductor structure: single diode Max. forward voltage: 1.55V Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 45A кількість в упаковці: 3000 шт |
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WNSC6D08650Q | WeEn Semiconductors | WNSC6D08650Q THT Schottky diodes |
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WNSC6D10650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 80A Max. forward voltage: 1.65V кількість в упаковці: 1 шт |
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WNSC6D10650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 75A кількість в упаковці: 3000 шт |
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WNSC6D16650CW6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 32A Max. forward voltage: 1.65V Load current: 16A Max. forward impulse current: 110A кількість в упаковці: 1 шт |
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WNSC6D20650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Max. load current: 40A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 120A Max. forward voltage: 1.8V кількість в упаковці: 1 шт |
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WNSC6D20650WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 155A кількість в упаковці: 1200 шт |
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WNSCM80120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 32A Pulsed drain current: 81A Power dissipation: 270W Case: TO247-4 Gate-source voltage: -10...25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 59nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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Z0103MA,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 395 шт: термін постачання 7-14 дні (днів) |
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Z0103MA,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: Ammo Pack кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 7-14 дні (днів) |
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Z0103MA,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 1 шт |
на замовлення 4228 шт: термін постачання 7-14 дні (днів) |
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Z0103MA0,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 5 шт |
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Z0103MN,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 3/5mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 1815 шт: термін постачання 7-14 дні (днів) |
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Z0103MN0,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 3/5mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 3796 шт: термін постачання 7-14 дні (днів) |
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Z0103NA,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 5 шт |
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Z0103NA0,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 5 шт |
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Z0103NA0QP | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 10000 шт |
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Z0103NN,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 3/5mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2652 шт: термін постачання 7-14 дні (днів) |
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Z0103NN0,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 3/5mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2571 шт: термін постачання 7-14 дні (днів) |
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Z0107MA,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 5562 шт: термін постачання 7-14 дні (днів) |
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Z0107MA,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 5 шт |
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Z0107MN,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 1618 шт: термін постачання 7-14 дні (днів) |
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Z0107MN0,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1132 шт: термін постачання 7-14 дні (днів) |
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Z0107NA,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 10000 шт |
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Z0107NA,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: Ammo Pack кількість в упаковці: 10000 шт |
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Z0107NA,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 5 шт |
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Z0107NA0,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 5 шт |
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Z0107NA0QP | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 10000 шт |
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Z0107NN,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
товар відсутній |
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Z0107NN0,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1775 шт: термін постачання 7-14 дні (днів) |
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Z0109MA,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 5 шт |
товар відсутній |
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Z0109MA0,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 5 шт |
товар відсутній |
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Z0109MN,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; SOT223; Igt: 10mA; Ifsm: 8.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 3015 шт: термін постачання 7-14 дні (днів) |
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Z0109MN0,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; SOT223; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 488 шт: термін постачання 7-14 дні (днів) |
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Z0109NA,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape кількість в упаковці: 10000 шт |
товар відсутній |
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Z0109NA,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: Ammo Pack кількість в упаковці: 10000 шт |
товар відсутній |
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Z0109NA,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 5 шт |
товар відсутній |
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Z0109NA0,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk кількість в упаковці: 5 шт |
товар відсутній |
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Z0109NN,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 10mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 3043 шт: термін постачання 7-14 дні (днів) |
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Z0109NN0,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2614 шт: термін постачання 7-14 дні (днів) |
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BT136-600E,127 | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - BT136-600E,127 - Triac, 600 V, 4 A, TO-220AB, 1 V, 25 A, 15 mA tariffCode: 85413000 Bauform - Triac: TO-220AB rohsCompliant: YES Haltestrom, max.: 15mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 25A Spitzen-Durchlassspannung: 1.7V MSL: MSL 1 - unbegrenzt usEccn: EAR99 RMS-Durchlassstrom: 4A euEccn: NLR Zündspannung, max.: 1V Periodische Spitzen-Sperrspannung: 600V Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Thyristormontage: Durchsteckmontage Betriebstemperatur, max.: 125°C SVHC: No SVHC (17-Dec-2015) |
на замовлення 3474 шт: термін постачання 21-31 дні (днів) |
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BT136X-600E,127 | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - BT136X-600E,127 - Triac, 600 V, 4 A, TO-220FP, 1 V, 25 A, 15 mA tariffCode: 85413000 Bauform - Triac: TO-220FP rohsCompliant: YES Haltestrom, max.: 15mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 25A Spitzen-Durchlassspannung: 1.7V MSL: MSL 1 - unbegrenzt usEccn: EAR99 RMS-Durchlassstrom: 4A euEccn: NLR Zündspannung, max.: 1V Periodische Spitzen-Sperrspannung: 600V Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Thyristormontage: Durchsteckmontage Betriebstemperatur, max.: 125°C SVHC: No SVHC (17-Dec-2015) |
на замовлення 337 шт: термін постачання 21-31 дні (днів) |
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BT169D-L,116 | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - BT169D-L,116 - Thyristor, 400 V, 50 µA, 500 mA, 800 mA, TO-92, 3 Pin(s) tariffCode: 85413000 rohsCompliant: YES Haltestrom, max.: 1mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 8A usEccn: EAR99 Durchlassstrom, durchschnittlich: 500mA RMS-Durchlassstrom: 800mA euEccn: NLR Zündspannung, max.: 800mV Periodische Spitzen-Sperrspannung: 400V Anzahl der Pins: 3Pin(s) Produktpalette: - Zündstrom, max.: 50µA productTraceability: No Betriebstemperatur, max.: 125°C |
на замовлення 6870 шт: термін постачання 21-31 дні (днів) |
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WNSC2D20650CWQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.8V
кількість в упаковці: 480 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.8V
кількість в упаковці: 480 шт
товар відсутній
WNSC2D301200CWQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 30A
Type of diode: Schottky rectifying
Max. forward impulse current: 102A
Load current: 15A x2
кількість в упаковці: 600 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 30A
Type of diode: Schottky rectifying
Max. forward impulse current: 102A
Load current: 15A x2
кількість в упаковці: 600 шт
товар відсутній
WNSC2D401200CWQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 40A
Type of diode: Schottky rectifying
Max. forward impulse current: 125A
Load current: 20A x2
кількість в упаковці: 600 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 40A
Type of diode: Schottky rectifying
Max. forward impulse current: 125A
Load current: 20A x2
кількість в упаковці: 600 шт
товар відсутній
WNSC2D401200W6Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Max. load current: 80A
Type of diode: Schottky rectifying
Max. forward impulse current: 350A
Load current: 40A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Max. load current: 80A
Type of diode: Schottky rectifying
Max. forward impulse current: 350A
Load current: 40A
кількість в упаковці: 1 шт
товар відсутній
WNSC2D501200W6Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Max. load current: 100A
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Load current: 50A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Max. load current: 100A
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Load current: 50A
кількість в упаковці: 1 шт
товар відсутній
WNSC2M1K0170WQ |
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 240 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 240 шт
товар відсутній
WNSC2M20120R6Q |
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
WNSC2M40120R6Q |
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
WNSC401200CWQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 200A
кількість в упаковці: 480 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 200A
кількість в упаковці: 480 шт
товар відсутній
WNSC5D046506Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 28A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 28A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC5D04650D6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 26A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 26A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC5D06650T6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 36A
кількість в упаковці: 3000 шт
товар відсутній
WNSC5D20650X6Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 80A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 80A
Max. forward voltage: 2.2V
кількість в упаковці: 1 шт
товар відсутній
WNSC6D01650MBJ |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 18A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 18A
кількість в упаковці: 1 шт
товар відсутній
WNSC6D046506Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.55V
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.55V
кількість в упаковці: 1000 шт
товар відсутній
WNSC6D04650Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 30A
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 30A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D06650Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 46A
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 46A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D06650T6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 45A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 45A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D10650B6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 80A
Max. forward voltage: 1.65V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 80A
Max. forward voltage: 1.65V
кількість в упаковці: 1 шт
товар відсутній
WNSC6D10650Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 75A
кількість в упаковці: 3000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 75A
кількість в упаковці: 3000 шт
товар відсутній
WNSC6D16650CW6Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 32A
Max. forward voltage: 1.65V
Load current: 16A
Max. forward impulse current: 110A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 32A
Max. forward voltage: 1.65V
Load current: 16A
Max. forward impulse current: 110A
кількість в упаковці: 1 шт
товар відсутній
WNSC6D20650B6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Max. forward voltage: 1.8V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Max. forward voltage: 1.8V
кількість в упаковці: 1 шт
товар відсутній
WNSC6D20650WQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 155A
кількість в упаковці: 1200 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 155A
кількість в упаковці: 1200 шт
товар відсутній
WNSCM80120R6Q |
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
Z0103MA,116 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 395 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.4 грн |
28+ | 9.62 грн |
100+ | 8.26 грн |
126+ | 7.68 грн |
346+ | 7.26 грн |
2500+ | 7.01 грн |
Z0103MA,126 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 26.96 грн |
25+ | 10.4 грн |
100+ | 8.26 грн |
128+ | 7.51 грн |
353+ | 7.09 грн |
2500+ | 6.93 грн |
Z0103MA,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 1 шт
на замовлення 4228 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.04 грн |
28+ | 9.36 грн |
100+ | 7.93 грн |
128+ | 7.51 грн |
353+ | 7.09 грн |
5000+ | 6.93 грн |
Z0103MA0,116 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
Z0103MN,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1815 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 14.56 грн |
25+ | 12.48 грн |
100+ | 10.6 грн |
110+ | 9.18 грн |
290+ | 8.68 грн |
2000+ | 8.43 грн |
Z0103MN0,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3796 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.67 грн |
25+ | 12.48 грн |
100+ | 10.85 грн |
106+ | 9.18 грн |
289+ | 8.68 грн |
4000+ | 8.35 грн |
Z0103NA,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0103NA0,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0103NA0QP |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
Z0103NN,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2652 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.4 грн |
25+ | 12.05 грн |
100+ | 10.35 грн |
114+ | 8.43 грн |
314+ | 8.01 грн |
Z0103NN0,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2571 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 53.02 грн |
12+ | 22.19 грн |
25+ | 12.85 грн |
100+ | 11.6 грн |
110+ | 8.85 грн |
301+ | 8.35 грн |
Z0107MA,116 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 5562 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 42.24 грн |
14+ | 19.07 грн |
25+ | 11.02 грн |
100+ | 9.93 грн |
120+ | 8.09 грн |
330+ | 7.59 грн |
10000+ | 7.26 грн |
Z0107MA,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0107MN,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1618 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.53 грн |
100+ | 9.85 грн |
105+ | 9.35 грн |
285+ | 8.85 грн |
500+ | 8.76 грн |
4000+ | 8.43 грн |
Z0107MN0,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1132 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.4 грн |
28+ | 9.53 грн |
100+ | 8.09 грн |
129+ | 7.51 грн |
355+ | 7.09 грн |
4000+ | 6.76 грн |
Z0107NA,116 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
Z0107NA,126 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 10000 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 10000 шт
товар відсутній
Z0107NA,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0107NA0,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0107NA0QP |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
Z0107NN,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
Z0107NN0,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1775 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.4 грн |
28+ | 9.53 грн |
100+ | 8.09 грн |
138+ | 7.01 грн |
380+ | 6.59 грн |
Z0109MA,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
Z0109MA0,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0109MN,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 10mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 10mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 3015 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.53 грн |
100+ | 9.85 грн |
105+ | 9.26 грн |
290+ | 8.76 грн |
4000+ | 8.43 грн |
Z0109MN0,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 488 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 21.3 грн |
25+ | 13.09 грн |
100+ | 11.35 грн |
102+ | 9.47 грн |
281+ | 8.96 грн |
Z0109NA,116 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
Z0109NA,126 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 10000 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: Ammo Pack
кількість в упаковці: 10000 шт
товар відсутній
Z0109NA,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0109NA0,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
кількість в упаковці: 5 шт
товар відсутній
Z0109NN,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3043 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.4 грн |
26+ | 10.05 грн |
100+ | 8.93 грн |
136+ | 7.09 грн |
374+ | 6.68 грн |
2000+ | 6.51 грн |
Z0109NN0,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2614 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 20.94 грн |
25+ | 10.4 грн |
100+ | 9.01 грн |
131+ | 7.38 грн |
359+ | 6.98 грн |
BT136-600E,127 |
Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT136-600E,127 - Triac, 600 V, 4 A, TO-220AB, 1 V, 25 A, 15 mA
tariffCode: 85413000
Bauform - Triac: TO-220AB
rohsCompliant: YES
Haltestrom, max.: 15mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 25A
Spitzen-Durchlassspannung: 1.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
RMS-Durchlassstrom: 4A
euEccn: NLR
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Thyristormontage: Durchsteckmontage
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (17-Dec-2015)
Description: WEEN SEMICONDUCTORS - BT136-600E,127 - Triac, 600 V, 4 A, TO-220AB, 1 V, 25 A, 15 mA
tariffCode: 85413000
Bauform - Triac: TO-220AB
rohsCompliant: YES
Haltestrom, max.: 15mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 25A
Spitzen-Durchlassspannung: 1.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
RMS-Durchlassstrom: 4A
euEccn: NLR
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Thyristormontage: Durchsteckmontage
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (17-Dec-2015)
на замовлення 3474 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 52.65 грн |
17+ | 44.86 грн |
100+ | 27.79 грн |
500+ | 21.63 грн |
1000+ | 15.02 грн |
BT136X-600E,127 |
Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT136X-600E,127 - Triac, 600 V, 4 A, TO-220FP, 1 V, 25 A, 15 mA
tariffCode: 85413000
Bauform - Triac: TO-220FP
rohsCompliant: YES
Haltestrom, max.: 15mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 25A
Spitzen-Durchlassspannung: 1.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
RMS-Durchlassstrom: 4A
euEccn: NLR
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Thyristormontage: Durchsteckmontage
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (17-Dec-2015)
Description: WEEN SEMICONDUCTORS - BT136X-600E,127 - Triac, 600 V, 4 A, TO-220FP, 1 V, 25 A, 15 mA
tariffCode: 85413000
Bauform - Triac: TO-220FP
rohsCompliant: YES
Haltestrom, max.: 15mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 25A
Spitzen-Durchlassspannung: 1.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
RMS-Durchlassstrom: 4A
euEccn: NLR
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Thyristormontage: Durchsteckmontage
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (17-Dec-2015)
на замовлення 337 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 52.65 грн |
18+ | 42.39 грн |
100+ | 27.71 грн |
BT169D-L,116 |
Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT169D-L,116 - Thyristor, 400 V, 50 µA, 500 mA, 800 mA, TO-92, 3 Pin(s)
tariffCode: 85413000
rohsCompliant: YES
Haltestrom, max.: 1mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 8A
usEccn: EAR99
Durchlassstrom, durchschnittlich: 500mA
RMS-Durchlassstrom: 800mA
euEccn: NLR
Zündspannung, max.: 800mV
Periodische Spitzen-Sperrspannung: 400V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Zündstrom, max.: 50µA
productTraceability: No
Betriebstemperatur, max.: 125°C
Description: WEEN SEMICONDUCTORS - BT169D-L,116 - Thyristor, 400 V, 50 µA, 500 mA, 800 mA, TO-92, 3 Pin(s)
tariffCode: 85413000
rohsCompliant: YES
Haltestrom, max.: 1mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 8A
usEccn: EAR99
Durchlassstrom, durchschnittlich: 500mA
RMS-Durchlassstrom: 800mA
euEccn: NLR
Zündspannung, max.: 800mV
Periodische Spitzen-Sperrspannung: 400V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Zündstrom, max.: 50µA
productTraceability: No
Betriebstemperatur, max.: 125°C
на замовлення 6870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 31.98 грн |
34+ | 22.54 грн |
100+ | 9.36 грн |
500+ | 7.09 грн |
1000+ | 5.07 грн |
5000+ | 4.97 грн |