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NXPLQSC30650W6Q NXPLQSC30650W6Q WeEn Semiconductors nxplqsc30650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Case: TO247-3
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 30A
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BYW29ED-200,118 BYW29ED-200,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE89915EDFB4E7E0D5&compId=BYW29ED-200.pdf?ci_sign=8f4543668c1357ee6c420cc406b99d21f1d7ba1a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 0.8V
Load current: 8A
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Case: DPAK
на замовлення 1041 шт:
термін постачання 21-30 дні (днів)
8+56.54 грн
11+39.46 грн
46+20.68 грн
125+19.57 грн
Мінімальне замовлення: 8
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NXPSC046506Q NXPSC046506Q WeEn Semiconductors nxpsc04650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC04650B6J NXPSC04650B6J WeEn Semiconductors nxpsc04650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650D6J NXPSC04650D6J WeEn Semiconductors nxpsc04650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650X6Q NXPSC04650X6Q WeEn Semiconductors nxpsc04650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Case: TO220FP-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: tube
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SM8S33CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
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SMDJ70CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 78.4÷85.4V; 26.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 70V
Breakdown voltage: 78.4...85.4V
Max. forward impulse current: 26.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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NXPSC106506Q NXPSC106506Q WeEn Semiconductors nxpsc10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
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WNSC6D106506Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5BECC4C6400D6&compId=WNSC6D106506Q.pdf?ci_sign=5c99d18bc9a3647598c4fb847e48e0dd03293df4 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. load current: 20A
Max. forward impulse current: 85A
Kind of package: tube
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NXPLQSC106506Q NXPLQSC106506Q WeEn Semiconductors nxplqsc10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: tube
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BUJ100LR,412 BUJ100LR,412 WeEn Semiconductors buj100lr.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Kind of package: bulk
Polarisation: bipolar
Mounting: THT
Case: TO92
Type of transistor: NPN
Collector current: 1A
Power dissipation: 2.1W
Current gain: 5...20
Collector-emitter voltage: 400V
на замовлення 4256 шт:
термін постачання 21-30 дні (днів)
25+17.13 грн
33+12.33 грн
40+10.02 грн
100+7.80 грн
209+4.47 грн
575+4.23 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BYC30X-600P,127 BYC30X-600P,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAADF36EA426DA60C7&compId=byc30x-600p.pdf?ci_sign=dcfe2e4dbaa107f7c1161c8575513298b8b36078 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
3+149.06 грн
5+118.53 грн
10+108.98 грн
13+73.98 грн
35+70.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BYC30W-600PQ BYC30W-600PQ WeEn Semiconductors byc30w-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
на замовлення 496 шт:
термін постачання 21-30 дні (днів)
4+121.65 грн
10+70.00 грн
15+64.44 грн
40+61.25 грн
Мінімальне замовлення: 4
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BYC30WT-600PQ BYC30WT-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCFA087BDA3B0143&compId=BYC30WT-600P.pdf?ci_sign=73cd3f48df23691b87f9c9ae153ed78d7a4b44a5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
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BYC30MX-650PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CB8D1D95BC00D5&compId=BYC30MX-650PQ.pdf?ci_sign=c93101e74e871e4d0cdce33449e756666a528bcf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30-1200PQ BYC30-1200PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAADF2D20392F4C0C7&compId=byc30-1200p.pdf?ci_sign=6cf45d4e74957f83523163a61a28df2ae45d9545 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
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BYC30-600P,127 BYC30-600P,127 WeEn Semiconductors byc30-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
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BYC30B-600PJ BYC30B-600PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAEB2B60DA7CD20D2&compId=BYC30B-600P.pdf?ci_sign=5a66bdad916bdae384841bae10fafe7ca45df69c Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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BYC30DW-600PQ BYC30DW-600PQ WeEn Semiconductors byc30dw-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
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BYC30MB-650PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB9B6E51F3C0D6&compId=BYC30MB-650P.pdf?ci_sign=b1ee425c11824733666e8ee10f6e8f5e07642087 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 30A; 20ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 270A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30W-1200PQ BYC30W-1200PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAEB2A700145B20D2&compId=BYC30W-1200P.pdf?ci_sign=3455e0e6b0ee9f3531906db9e76988f181cfd13e Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
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BYC30W-600PT2Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CCBA993D91A0D6&compId=BYC30W-600PT2Q.pdf?ci_sign=c1fd8e49371f6803086bfd8106d1c4fbfa108f89 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
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BYC30Y-600PQ BYC30Y-600PQ WeEn Semiconductors BYC30Y-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
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BYC30Y-600PSQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB768D9D25E0D6&compId=BYC30Y-600PS.pdf?ci_sign=55c11d9aa950afbf1ed6a6148a567419033ca930 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: SOD59; TO220AC
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 45ns
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BYC15-600,127 BYC15-600,127 WeEn Semiconductors byc15-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 19ns
Max. forward voltage: 1.4V
Load current: 15A
Max. forward impulse current: 200A
Max. off-state voltage: 0.6kV
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
9+47.97 грн
11+37.55 грн
25+33.33 грн
26+33.25 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC15-600PQ BYC15-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20ADBB4D7A0CE&compId=BYC15-600P.pdf?ci_sign=8df26ea6b3ca0c95d623f62b1f774f85e0c859cd Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 30A
на замовлення 787 шт:
термін постачання 21-30 дні (днів)
7+68.53 грн
10+48.92 грн
28+34.13 грн
76+32.30 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYC15-1200PQ BYC15-1200PQ WeEn Semiconductors byc15-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
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BUJ302AD,118 BUJ302AD,118 WeEn Semiconductors buj302ad.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
на замовлення 988 шт:
термін постачання 21-30 дні (днів)
7+64.25 грн
10+47.57 грн
25+41.84 грн
44+21.24 грн
121+20.05 грн
Мінімальне замовлення: 7
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BUJ302A,127 BUJ302A,127 WeEn Semiconductors PHGLS22628-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
на замовлення 187 шт:
термін постачання 21-30 дні (днів)
8+56.54 грн
11+38.18 грн
13+30.87 грн
30+27.76 грн
41+22.99 грн
112+21.72 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMCJ58AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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BTA225-600BT,127 BTA225-600BT,127 WeEn Semiconductors bta225-600bt.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
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BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 616 шт:
термін постачання 21-30 дні (днів)
7+63.39 грн
8+52.50 грн
20+46.93 грн
55+44.55 грн
100+42.96 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA216B-800B,118 BTA216B-800B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 594 шт:
термін постачання 21-30 дні (днів)
5+102.80 грн
10+72.07 грн
100+45.18 грн
500+36.83 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA216B-600E,118 BTA216B-600E,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-800B/L02Q WeEn Semiconductors BTA216X_500B%26600B%26800B.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600D,127 BTA216-600D,127 WeEn Semiconductors bta216-600d.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600F,127 BTA216-600F,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E3601BDDFD6259&compId=BTA216-600F.pdf?ci_sign=9783fb5cacc54a09a562769daf7900098e0b97c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600F,118 BTA216B-600F,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600D,127 BTA216X-600D,127 WeEn Semiconductors PHGLS23478-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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В кошику  од. на суму  грн.
BTA216X-600F,127 BTA216X-600F,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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В кошику  од. на суму  грн.
SMCJ36CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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NXPSC04650D NXPSC04650D WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED88083887B4B202A18&compId=NXPSC04650D.pdf?ci_sign=7dce28f69ffa3c9298a9b1dc1bb232ba0127377a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: reel; tape
Max. forward voltage: 1.5V
Max. load current: 8A
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BUJ303A,127 BUJ303A,127 WeEn Semiconductors buj303a.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 100W; TO220AB
Mounting: THT
Collector current: 5A
Current gain: 14...35
Power dissipation: 100W
Collector-emitter voltage: 500V
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
на замовлення 899 шт:
термін постачання 21-30 дні (днів)
11+40.26 грн
12+33.57 грн
30+29.04 грн
44+21.24 грн
121+20.05 грн
500+19.33 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NXPSC066506Q NXPSC066506Q WeEn Semiconductors nxpsc06650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Load current: 6A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
Kind of package: tube
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NXPSC06650B6J NXPSC06650B6J WeEn Semiconductors nxpsc06650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650D6J NXPSC06650D6J WeEn Semiconductors nxpsc06650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650X6Q NXPSC06650X6Q WeEn Semiconductors nxpsc06650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Case: TO220FP-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Kind of package: tube
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NXPSC086506Q NXPSC086506Q WeEn Semiconductors nxpsc08650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC08650B6J NXPSC08650B6J WeEn Semiconductors nxpsc08650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650D6J NXPSC08650D6J WeEn Semiconductors nxpsc08650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650X6Q NXPSC08650X6Q WeEn Semiconductors nxpsc08650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Case: TO220FP-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: tube
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В кошику  од. на суму  грн.
NXPSC10650B6J NXPSC10650B6J WeEn Semiconductors nxpsc10650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650D6J NXPSC10650D6J WeEn Semiconductors nxpsc10650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650X6Q NXPSC10650X6Q WeEn Semiconductors nxpsc10650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC12650B6J NXPSC12650B6J WeEn Semiconductors NXPSC12650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 72A
Kind of package: reel; tape
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WNSC5D10650X6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E25A3A7F00D6&compId=WNSC5D10650X6Q.pdf?ci_sign=9588ffa2d3df7bfc01135f9dabcf2a04b0610fad Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
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WNSC6D10650X6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E659D58A60D6&compId=WNSC6D10650X6Q.pdf?ci_sign=d80b4641eb96b398e37ffe4455f30148a1fe403c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: tube
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WNSC5D10650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E617F54FBBE0D6&compId=WNSC5D10650B6J.pdf?ci_sign=25c4f681e8fd73febb353320ede10bb957b903b4 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. load current: 19A
Max. forward impulse current: 60A
Kind of package: reel; tape
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NXPLQSC30650W6Q nxplqsc30650w.pdf
NXPLQSC30650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Case: TO247-3
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 30A
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BYW29ED-200,118 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE89915EDFB4E7E0D5&compId=BYW29ED-200.pdf?ci_sign=8f4543668c1357ee6c420cc406b99d21f1d7ba1a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYW29ED-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 0.8V
Load current: 8A
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Case: DPAK
на замовлення 1041 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.54 грн
11+39.46 грн
46+20.68 грн
125+19.57 грн
Мінімальне замовлення: 8
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NXPSC046506Q nxpsc04650.pdf
NXPSC046506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC04650B6J nxpsc04650b.pdf
NXPSC04650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650D6J nxpsc04650d.pdf
NXPSC04650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650X6Q nxpsc04650x.pdf
NXPSC04650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Case: TO220FP-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: tube
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SM8S33CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
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SMDJ70CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 78.4÷85.4V; 26.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 70V
Breakdown voltage: 78.4...85.4V
Max. forward impulse current: 26.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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NXPSC106506Q nxpsc10650.pdf
NXPSC106506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
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WNSC6D106506Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5BECC4C6400D6&compId=WNSC6D106506Q.pdf?ci_sign=5c99d18bc9a3647598c4fb847e48e0dd03293df4
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. load current: 20A
Max. forward impulse current: 85A
Kind of package: tube
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NXPLQSC106506Q nxplqsc10650.pdf
NXPLQSC106506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: tube
товару немає в наявності
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BUJ100LR,412 buj100lr.pdf
BUJ100LR,412
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Kind of package: bulk
Polarisation: bipolar
Mounting: THT
Case: TO92
Type of transistor: NPN
Collector current: 1A
Power dissipation: 2.1W
Current gain: 5...20
Collector-emitter voltage: 400V
на замовлення 4256 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.13 грн
33+12.33 грн
40+10.02 грн
100+7.80 грн
209+4.47 грн
575+4.23 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BYC30X-600P,127 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAADF36EA426DA60C7&compId=byc30x-600p.pdf?ci_sign=dcfe2e4dbaa107f7c1161c8575513298b8b36078 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC30X-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+149.06 грн
5+118.53 грн
10+108.98 грн
13+73.98 грн
35+70.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BYC30W-600PQ byc30w-600p.pdf
BYC30W-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
на замовлення 496 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+121.65 грн
10+70.00 грн
15+64.44 грн
40+61.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYC30WT-600PQ pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCFA087BDA3B0143&compId=BYC30WT-600P.pdf?ci_sign=73cd3f48df23691b87f9c9ae153ed78d7a4b44a5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC30WT-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
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BYC30MX-650PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CB8D1D95BC00D5&compId=BYC30MX-650PQ.pdf?ci_sign=c93101e74e871e4d0cdce33449e756666a528bcf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30-1200PQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAADF2D20392F4C0C7&compId=byc30-1200p.pdf?ci_sign=6cf45d4e74957f83523163a61a28df2ae45d9545 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC30-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
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BYC30-600P,127 byc30-600p.pdf
BYC30-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
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BYC30B-600PJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAEB2B60DA7CD20D2&compId=BYC30B-600P.pdf?ci_sign=5a66bdad916bdae384841bae10fafe7ca45df69c
BYC30B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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В кошику  од. на суму  грн.
BYC30DW-600PQ byc30dw-600p.pdf
BYC30DW-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
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BYC30MB-650PJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB9B6E51F3C0D6&compId=BYC30MB-650P.pdf?ci_sign=b1ee425c11824733666e8ee10f6e8f5e07642087
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 30A; 20ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 270A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30W-1200PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAEB2A700145B20D2&compId=BYC30W-1200P.pdf?ci_sign=3455e0e6b0ee9f3531906db9e76988f181cfd13e
BYC30W-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
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BYC30W-600PT2Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CCBA993D91A0D6&compId=BYC30W-600PT2Q.pdf?ci_sign=c1fd8e49371f6803086bfd8106d1c4fbfa108f89
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
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BYC30Y-600PQ BYC30Y-600P.pdf
BYC30Y-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
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BYC30Y-600PSQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB768D9D25E0D6&compId=BYC30Y-600PS.pdf?ci_sign=55c11d9aa950afbf1ed6a6148a567419033ca930
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: SOD59; TO220AC
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 45ns
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BYC15-600,127 byc15-600.pdf
BYC15-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 19ns
Max. forward voltage: 1.4V
Load current: 15A
Max. forward impulse current: 200A
Max. off-state voltage: 0.6kV
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.97 грн
11+37.55 грн
25+33.33 грн
26+33.25 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC15-600PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20ADBB4D7A0CE&compId=BYC15-600P.pdf?ci_sign=8df26ea6b3ca0c95d623f62b1f774f85e0c859cd
BYC15-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 30A
на замовлення 787 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+68.53 грн
10+48.92 грн
28+34.13 грн
76+32.30 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYC15-1200PQ byc15-1200p.pdf
BYC15-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
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BUJ302AD,118 buj302ad.pdf
BUJ302AD,118
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
на замовлення 988 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+64.25 грн
10+47.57 грн
25+41.84 грн
44+21.24 грн
121+20.05 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BUJ302A,127 PHGLS22628-1.pdf?t.download=true&u=5oefqw
BUJ302A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
на замовлення 187 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.54 грн
11+38.18 грн
13+30.87 грн
30+27.76 грн
41+22.99 грн
112+21.72 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMCJ58AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товару немає в наявності
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BTA225-600BT,127 bta225-600bt.pdf
BTA225-600BT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
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BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 616 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.39 грн
8+52.50 грн
20+46.93 грн
55+44.55 грн
100+42.96 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA216B-800B,118 bta216b-800b.pdf
BTA216B-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 594 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+102.80 грн
10+72.07 грн
100+45.18 грн
500+36.83 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA216B-600E,118 bta216b-600e.pdf
BTA216B-600E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-800B/L02Q BTA216X_500B%26600B%26800B.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600D,127 bta216-600d.pdf
BTA216-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600F,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E3601BDDFD6259&compId=BTA216-600F.pdf?ci_sign=9783fb5cacc54a09a562769daf7900098e0b97c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA216-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600F,118 bta216b-600e.pdf
BTA216B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600D,127 PHGLS23478-1.pdf?t.download=true&u=5oefqw
BTA216X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
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BTA216X-600F,127 bta216x-600e.pdf
BTA216X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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SMCJ36CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товару немає в наявності
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NXPSC04650D pVersion=0046&contRep=ZT&docId=005056AB752F1ED88083887B4B202A18&compId=NXPSC04650D.pdf?ci_sign=7dce28f69ffa3c9298a9b1dc1bb232ba0127377a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
NXPSC04650D
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: reel; tape
Max. forward voltage: 1.5V
Max. load current: 8A
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BUJ303A,127 buj303a.pdf
BUJ303A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 100W; TO220AB
Mounting: THT
Collector current: 5A
Current gain: 14...35
Power dissipation: 100W
Collector-emitter voltage: 500V
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
на замовлення 899 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.26 грн
12+33.57 грн
30+29.04 грн
44+21.24 грн
121+20.05 грн
500+19.33 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NXPSC066506Q nxpsc06650.pdf
NXPSC066506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Load current: 6A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
Kind of package: tube
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NXPSC06650B6J nxpsc06650b.pdf
NXPSC06650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650D6J nxpsc06650d.pdf
NXPSC06650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650X6Q nxpsc06650x.pdf
NXPSC06650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Case: TO220FP-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Kind of package: tube
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NXPSC086506Q nxpsc08650.pdf
NXPSC086506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC08650B6J nxpsc08650b.pdf
NXPSC08650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650D6J nxpsc08650d.pdf
NXPSC08650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650X6Q nxpsc08650x.pdf
NXPSC08650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Case: TO220FP-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC10650B6J nxpsc10650b.pdf
NXPSC10650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650D6J nxpsc10650d.pdf
NXPSC10650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650X6Q nxpsc10650x.pdf
NXPSC10650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC12650B6J NXPSC12650B6J.pdf
NXPSC12650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 72A
Kind of package: reel; tape
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WNSC5D10650X6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E25A3A7F00D6&compId=WNSC5D10650X6Q.pdf?ci_sign=9588ffa2d3df7bfc01135f9dabcf2a04b0610fad
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
WNSC6D10650X6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E659D58A60D6&compId=WNSC6D10650X6Q.pdf?ci_sign=d80b4641eb96b398e37ffe4455f30148a1fe403c
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: tube
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WNSC5D10650B6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E617F54FBBE0D6&compId=WNSC5D10650B6J.pdf?ci_sign=25c4f681e8fd73febb353320ede10bb957b903b4
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. load current: 19A
Max. forward impulse current: 60A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
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