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NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
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BUJ100LR,412 BUJ100LR,412 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
на замовлення 4242 шт:
термін постачання 21-30 дні (днів)
28+15.39 грн
36+11.03 грн
45+8.95 грн
100+6.96 грн
500+5.12 грн
1000+4.58 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BYC30X-600P,127 BYC30X-600P,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAADF36EA426DA60C7&compId=byc30x-600p.pdf?ci_sign=dcfe2e4dbaa107f7c1161c8575513298b8b36078 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
3+148.75 грн
5+118.28 грн
10+108.75 грн
13+73.83 грн
35+69.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BYC30W-600PQ BYC30W-600PQ WeEn Semiconductors byc30w-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
на замовлення 496 шт:
термін постачання 21-30 дні (днів)
4+121.39 грн
10+69.86 грн
15+64.30 грн
40+61.12 грн
Мінімальне замовлення: 4
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BYC30WT-600PQ BYC30WT-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCFA087BDA3B0143&compId=BYC30WT-600P.pdf?ci_sign=73cd3f48df23691b87f9c9ae153ed78d7a4b44a5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
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BYC30MX-650PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CB8D1D95BC00D5&compId=BYC30MX-650PQ.pdf?ci_sign=c93101e74e871e4d0cdce33449e756666a528bcf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30-1200PQ BYC30-1200PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAADF2D20392F4C0C7&compId=byc30-1200p.pdf?ci_sign=6cf45d4e74957f83523163a61a28df2ae45d9545 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
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BYC30-600P,127 BYC30-600P,127 WeEn Semiconductors byc30-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
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BYC30B-600PJ BYC30B-600PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAEB2B60DA7CD20D2&compId=BYC30B-600P.pdf?ci_sign=5a66bdad916bdae384841bae10fafe7ca45df69c Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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BYC30DW-600PQ BYC30DW-600PQ WeEn Semiconductors byc30dw-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
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BYC30MB-650PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB9B6E51F3C0D6&compId=BYC30MB-650P.pdf?ci_sign=b1ee425c11824733666e8ee10f6e8f5e07642087 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 30A; 20ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 270A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30W-1200PQ BYC30W-1200PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAEB2A700145B20D2&compId=BYC30W-1200P.pdf?ci_sign=3455e0e6b0ee9f3531906db9e76988f181cfd13e Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
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BYC30W-600PT2Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CCBA993D91A0D6&compId=BYC30W-600PT2Q.pdf?ci_sign=c1fd8e49371f6803086bfd8106d1c4fbfa108f89 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
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BYC30Y-600PQ BYC30Y-600PQ WeEn Semiconductors BYC30Y-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
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BYC30Y-600PSQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB768D9D25E0D6&compId=BYC30Y-600PS.pdf?ci_sign=55c11d9aa950afbf1ed6a6148a567419033ca930 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: SOD59; TO220AC
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 45ns
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BYC15-600,127 BYC15-600,127 WeEn Semiconductors byc15-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 19ns
Max. forward voltage: 1.4V
Load current: 15A
Max. forward impulse current: 200A
Max. off-state voltage: 0.6kV
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
9+47.87 грн
11+37.47 грн
25+33.26 грн
26+33.18 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC15-600PQ BYC15-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20ADBB4D7A0CE&compId=BYC15-600P.pdf?ci_sign=8df26ea6b3ca0c95d623f62b1f774f85e0c859cd Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 18ns
на замовлення 781 шт:
термін постачання 21-30 дні (днів)
8+60.70 грн
10+43.66 грн
50+36.75 грн
100+34.29 грн
500+30.96 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC15-1200PQ BYC15-1200PQ WeEn Semiconductors byc15-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
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BUJ302AD,118 BUJ302AD,118 WeEn Semiconductors buj302ad.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 80W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 25...50
на замовлення 394 шт:
термін постачання 21-30 дні (днів)
8+59.84 грн
10+43.98 грн
25+38.66 грн
100+30.96 грн
Мінімальне замовлення: 8
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BUJ302A,127 BUJ302A,127 WeEn Semiconductors PHGLS22628-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
на замовлення 176 шт:
термін постачання 21-30 дні (днів)
9+50.44 грн
12+34.13 грн
15+27.55 грн
30+24.77 грн
100+21.83 грн
Мінімальне замовлення: 9
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SMCJ58AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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BTA225-600BT,127 BTA225-600BT,127 WeEn Semiconductors bta225-600bt.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
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BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 616 шт:
термін постачання 21-30 дні (днів)
7+63.26 грн
8+52.39 грн
25+46.84 грн
100+42.87 грн
Мінімальне замовлення: 7
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BTA216B-800B,118 BTA216B-800B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 594 шт:
термін постачання 21-30 дні (днів)
5+102.59 грн
10+71.92 грн
100+45.09 грн
500+36.75 грн
Мінімальне замовлення: 5
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BTA216B-600E,118 BTA216B-600E,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-800B/L02Q WeEn Semiconductors BTA216X_500B%26600B%26800B.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600D,127 BTA216-600D,127 WeEn Semiconductors bta216-600d.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600F,127 BTA216-600F,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E3601BDDFD6259&compId=BTA216-600F.pdf?ci_sign=9783fb5cacc54a09a562769daf7900098e0b97c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600F,118 BTA216B-600F,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600D,127 BTA216X-600D,127 WeEn Semiconductors PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600F,127 BTA216X-600F,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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NXPSC10650B6J NXPSC10650B6J WeEn Semiconductors nxpsc10650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650D6J NXPSC10650D6J WeEn Semiconductors nxpsc10650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650X6Q NXPSC10650X6Q WeEn Semiconductors nxpsc10650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC12650B6J NXPSC12650B6J WeEn Semiconductors NXPSC12650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 72A
Kind of package: reel; tape
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WNSC5D10650X6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E25A3A7F00D6&compId=WNSC5D10650X6Q.pdf?ci_sign=9588ffa2d3df7bfc01135f9dabcf2a04b0610fad Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
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WNSC6D10650X6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E659D58A60D6&compId=WNSC6D10650X6Q.pdf?ci_sign=d80b4641eb96b398e37ffe4455f30148a1fe403c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: tube
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BYV29X-600,127 BYV29X-600,127 WeEn Semiconductors byv29x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
на замовлення 569 шт:
термін постачання 21-30 дні (днів)
8+54.71 грн
39+24.05 грн
50+23.66 грн
108+22.78 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMDJ30AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
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BUJ302AX,127 BUJ302AX,127 WeEn Semiconductors buj302ax.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 26W
Collector-emitter voltage: 400V
Polarisation: bipolar
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BYV29-600,127 BYV29-600,127 WeEn Semiconductors BYV29-600%2C127.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+213.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BYV29B-500,118 BYV29B-500,118 WeEn Semiconductors byv29b-500.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600PJ BYV29B-600PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F223F63C9080CE&compId=BYV29B-600P.pdf?ci_sign=f5c8b965b2094004d1671c37d233310c1cff523b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Max. load current: 18A
Features of semiconductor devices: ultrafast switching
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BYV29F-600,127 BYV29F-600,127 WeEn Semiconductors PHGLS22517-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV29FX-600,127 BYV29FX-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E28AE8556E2259&compId=BYV29FX-600.pdf?ci_sign=3c1b83bb28395370b266503835f890d3700a6ae5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600,118 BYV29B-600,118 WeEn Semiconductors byv29b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29D-600PJ BYV29D-600PJ WeEn Semiconductors byv29d-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: DPAK
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
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BYV29FB-600,118 BYV29FB-600,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E235D52B67E259&compId=BYV29FB-600.pdf?ci_sign=e8e1d07f48cf8dae173ceb187b66e04496d8e03d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29FD-600,118 BYV29FD-600,118 WeEn Semiconductors byv29fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 91A
Case: DPAK
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
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BYV29G-600,127 BYV29G-600,127 WeEn Semiconductors byv29g-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; I2PAK; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: I2PAK
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
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P6SMBJ28CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BTA208X-1000C0,127 WeEn Semiconductors bta208x-1000c0.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Case: TO220FP
Features of semiconductor devices: high commutation
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 35mA
Max. load current: 8A
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Max. off-state voltage: 1kV
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BTA208X-1000C0/L01 WeEn Semiconductors bta208x-1000c0.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Case: TO220FP
Features of semiconductor devices: high commutation
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 35mA
Max. load current: 8A
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Max. off-state voltage: 1kV
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BT139-800E.127 BT139-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D6E43F36E259&compId=BT139-800E.pdf?ci_sign=bef01da168f172cb03f1b4b3ec4e7edbb4de50ca pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BYV34-400,127 BYV34-400,127 WeEn Semiconductors byv34-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
на замовлення 1405 шт:
термін постачання 21-30 дні (днів)
4+119.68 грн
10+78.11 грн
21+46.52 грн
56+43.98 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV32E-100,127 BYV32E-100,127 WeEn Semiconductors byv32e-100.pdf BYV32E-100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 501 шт:
термін постачання 21-30 дні (днів)
9+50.44 грн
10+39.85 грн
25+35.09 грн
100+31.75 грн
250+30.80 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV32E-150,127 BYV32E-150,127 WeEn Semiconductors byv32e-150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
9+50.44 грн
10+39.85 грн
25+35.09 грн
100+31.75 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV42E-150,127 BYV42E-150,127 WeEn Semiconductors byv42e-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: max. 1.3mm
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
5+89.76 грн
10+65.25 грн
25+58.90 грн
50+54.38 грн
100+50.09 грн
250+45.09 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV32EB-200,118 BYV32EB-200,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78292AEACF3A20259&compId=BYV32EB-200.pdf?ci_sign=9e0a942a6acdf47060359758fe6cbdfc3375fc40 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Max. forward impulse current: 137A
Kind of package: reel; tape
на замовлення 624 шт:
термін постачання 21-30 дні (днів)
4+127.38 грн
10+69.46 грн
25+60.65 грн
50+54.61 грн
60+53.19 грн
100+49.06 грн
250+42.23 грн
500+37.39 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BT139-800G.127 BT139-800G.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D9A87A704259&compId=BT139-800G.pdf?ci_sign=730d17cbd62026389a09ce9b950cc8b31e0da910 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
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BUJ100LR,412
BUJ100LR,412
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
на замовлення 4242 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.39 грн
36+11.03 грн
45+8.95 грн
100+6.96 грн
500+5.12 грн
1000+4.58 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BYC30X-600P,127 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAADF36EA426DA60C7&compId=byc30x-600p.pdf?ci_sign=dcfe2e4dbaa107f7c1161c8575513298b8b36078 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC30X-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+148.75 грн
5+118.28 грн
10+108.75 грн
13+73.83 грн
35+69.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BYC30W-600PQ byc30w-600p.pdf
BYC30W-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
на замовлення 496 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+121.39 грн
10+69.86 грн
15+64.30 грн
40+61.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYC30WT-600PQ pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCFA087BDA3B0143&compId=BYC30WT-600P.pdf?ci_sign=73cd3f48df23691b87f9c9ae153ed78d7a4b44a5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC30WT-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
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BYC30MX-650PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CB8D1D95BC00D5&compId=BYC30MX-650PQ.pdf?ci_sign=c93101e74e871e4d0cdce33449e756666a528bcf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC30-1200PQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAADF2D20392F4C0C7&compId=byc30-1200p.pdf?ci_sign=6cf45d4e74957f83523163a61a28df2ae45d9545 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC30-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
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BYC30-600P,127 byc30-600p.pdf
BYC30-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
товару немає в наявності
В кошику  од. на суму  грн.
BYC30B-600PJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAEB2B60DA7CD20D2&compId=BYC30B-600P.pdf?ci_sign=5a66bdad916bdae384841bae10fafe7ca45df69c
BYC30B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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В кошику  од. на суму  грн.
BYC30DW-600PQ byc30dw-600p.pdf
BYC30DW-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
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В кошику  од. на суму  грн.
BYC30MB-650PJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB9B6E51F3C0D6&compId=BYC30MB-650P.pdf?ci_sign=b1ee425c11824733666e8ee10f6e8f5e07642087
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 30A; 20ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 270A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
товару немає в наявності
В кошику  од. на суму  грн.
BYC30W-1200PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAEB2A700145B20D2&compId=BYC30W-1200P.pdf?ci_sign=3455e0e6b0ee9f3531906db9e76988f181cfd13e
BYC30W-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
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В кошику  од. на суму  грн.
BYC30W-600PT2Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CCBA993D91A0D6&compId=BYC30W-600PT2Q.pdf?ci_sign=c1fd8e49371f6803086bfd8106d1c4fbfa108f89
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
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В кошику  од. на суму  грн.
BYC30Y-600PQ BYC30Y-600P.pdf
BYC30Y-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
товару немає в наявності
В кошику  од. на суму  грн.
BYC30Y-600PSQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB768D9D25E0D6&compId=BYC30Y-600PS.pdf?ci_sign=55c11d9aa950afbf1ed6a6148a567419033ca930
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: SOD59; TO220AC
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 45ns
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BYC15-600,127 byc15-600.pdf
BYC15-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 19ns
Max. forward voltage: 1.4V
Load current: 15A
Max. forward impulse current: 200A
Max. off-state voltage: 0.6kV
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.87 грн
11+37.47 грн
25+33.26 грн
26+33.18 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC15-600PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20ADBB4D7A0CE&compId=BYC15-600P.pdf?ci_sign=8df26ea6b3ca0c95d623f62b1f774f85e0c859cd
BYC15-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 18ns
на замовлення 781 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+60.70 грн
10+43.66 грн
50+36.75 грн
100+34.29 грн
500+30.96 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC15-1200PQ byc15-1200p.pdf
BYC15-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
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BUJ302AD,118 buj302ad.pdf
BUJ302AD,118
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 80W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 25...50
на замовлення 394 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+59.84 грн
10+43.98 грн
25+38.66 грн
100+30.96 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BUJ302A,127 PHGLS22628-1.pdf?t.download=true&u=5oefqw
BUJ302A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
на замовлення 176 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.44 грн
12+34.13 грн
15+27.55 грн
30+24.77 грн
100+21.83 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMCJ58AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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BTA225-600BT,127 bta225-600bt.pdf
BTA225-600BT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
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BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 616 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.26 грн
8+52.39 грн
25+46.84 грн
100+42.87 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA216B-800B,118 bta216b-800b.pdf
BTA216B-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 594 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+102.59 грн
10+71.92 грн
100+45.09 грн
500+36.75 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA216B-600E,118 bta216b-600e.pdf
BTA216B-600E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-800B/L02Q BTA216X_500B%26600B%26800B.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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В кошику  од. на суму  грн.
BTA216-600D,127 bta216-600d.pdf
BTA216-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600F,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E3601BDDFD6259&compId=BTA216-600F.pdf?ci_sign=9783fb5cacc54a09a562769daf7900098e0b97c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA216-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600F,118 bta216b-600e.pdf
BTA216B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-600D,127 PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf
BTA216X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600F,127 bta216x-600e.pdf
BTA216X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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NXPSC10650B6J nxpsc10650b.pdf
NXPSC10650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650D6J nxpsc10650d.pdf
NXPSC10650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650X6Q nxpsc10650x.pdf
NXPSC10650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC12650B6J NXPSC12650B6J.pdf
NXPSC12650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 72A
Kind of package: reel; tape
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WNSC5D10650X6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E25A3A7F00D6&compId=WNSC5D10650X6Q.pdf?ci_sign=9588ffa2d3df7bfc01135f9dabcf2a04b0610fad
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
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WNSC6D10650X6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5E659D58A60D6&compId=WNSC6D10650X6Q.pdf?ci_sign=d80b4641eb96b398e37ffe4455f30148a1fe403c
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: tube
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BYV29X-600,127 byv29x-600.pdf
BYV29X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
на замовлення 569 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.71 грн
39+24.05 грн
50+23.66 грн
108+22.78 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMDJ30AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
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BUJ302AX,127 buj302ax.pdf
BUJ302AX,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 26W
Collector-emitter voltage: 400V
Polarisation: bipolar
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BYV29-600,127 BYV29-600%2C127.pdf
BYV29-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+213.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BYV29B-500,118 byv29b-500.pdf
BYV29B-500,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600PJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F223F63C9080CE&compId=BYV29B-600P.pdf?ci_sign=f5c8b965b2094004d1671c37d233310c1cff523b
BYV29B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Max. load current: 18A
Features of semiconductor devices: ultrafast switching
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BYV29F-600,127 PHGLS22517-1.pdf?t.download=true&u=5oefqw
BYV29F-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV29FX-600,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E28AE8556E2259&compId=BYV29FX-600.pdf?ci_sign=3c1b83bb28395370b266503835f890d3700a6ae5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV29FX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600,118 byv29b-600.pdf
BYV29B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29D-600PJ byv29d-600p.pdf
BYV29D-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: DPAK
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
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BYV29FB-600,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E235D52B67E259&compId=BYV29FB-600.pdf?ci_sign=e8e1d07f48cf8dae173ceb187b66e04496d8e03d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV29FB-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29FD-600,118 byv29fd-600.pdf
BYV29FD-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 91A
Case: DPAK
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
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BYV29G-600,127 byv29g-600.pdf
BYV29G-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; I2PAK; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: I2PAK
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
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P6SMBJ28CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BTA208X-1000C0,127 bta208x-1000c0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Case: TO220FP
Features of semiconductor devices: high commutation
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 35mA
Max. load current: 8A
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Max. off-state voltage: 1kV
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BTA208X-1000C0/L01 bta208x-1000c0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Case: TO220FP
Features of semiconductor devices: high commutation
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 35mA
Max. load current: 8A
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Max. off-state voltage: 1kV
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BT139-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D6E43F36E259&compId=BT139-800E.pdf?ci_sign=bef01da168f172cb03f1b4b3ec4e7edbb4de50ca pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT139-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BYV34-400,127 byv34-400.pdf
BYV34-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
на замовлення 1405 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+119.68 грн
10+78.11 грн
21+46.52 грн
56+43.98 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV32E-100,127 byv32e-100.pdf BYV32E-100.pdf
BYV32E-100,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 501 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.44 грн
10+39.85 грн
25+35.09 грн
100+31.75 грн
250+30.80 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV32E-150,127 byv32e-150.pdf
BYV32E-150,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.44 грн
10+39.85 грн
25+35.09 грн
100+31.75 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV42E-150,127 byv42e-200.pdf
BYV42E-150,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: max. 1.3mm
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+89.76 грн
10+65.25 грн
25+58.90 грн
50+54.38 грн
100+50.09 грн
250+45.09 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV32EB-200,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78292AEACF3A20259&compId=BYV32EB-200.pdf?ci_sign=9e0a942a6acdf47060359758fe6cbdfc3375fc40 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EB-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Max. forward impulse current: 137A
Kind of package: reel; tape
на замовлення 624 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+127.38 грн
10+69.46 грн
25+60.65 грн
50+54.61 грн
60+53.19 грн
100+49.06 грн
250+42.23 грн
500+37.39 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BT139-800G.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291D9A87A704259&compId=BT139-800G.pdf?ci_sign=730d17cbd62026389a09ce9b950cc8b31e0da910 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT139-800G.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
товару немає в наявності
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