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BTA216X-600D,127 BTA216X-600D,127 WeEn Semiconductors PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600F,127 BTA216X-600F,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYV29X-600,127 BYV29X-600,127 WeEn Semiconductors byv29x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
на замовлення 560 шт:
термін постачання 21-30 дні (днів)
9+50.11 грн
50+22.45 грн
Мінімальне замовлення: 9
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BYV29-600,127 BYV29-600,127 WeEn Semiconductors BYV29-600%2C127.pdf BYV29600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+439.53 грн
В кошику  од. на суму  грн.
BYV29B-500,118 BYV29B-500,118 WeEn Semiconductors byv29b-500.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600PJ BYV29B-600PJ WeEn Semiconductors BYV29B-600P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Max. load current: 18A
Features of semiconductor devices: ultrafast switching
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BYV29F-600,127 BYV29F-600,127 WeEn Semiconductors PHGLS22517-1.pdf?t.download=true&u=5oefqw byv29f-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV29FX-600,127 BYV29FX-600,127 WeEn Semiconductors BYV29FX-600.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600,118 BYV29B-600,118 WeEn Semiconductors byv29b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29D-600PJ BYV29D-600PJ WeEn Semiconductors byv29d-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: DPAK
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
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BYV29FB-600,118 BYV29FB-600,118 WeEn Semiconductors BYV29FB-600.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29FD-600,118 BYV29FD-600,118 WeEn Semiconductors byv29fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 91A
Case: DPAK
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29G-600,127 BYV29G-600,127 WeEn Semiconductors byv29g-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; I2PAK; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: I2PAK
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
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P6SMBJ28CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BTA208X-1000C0,127 WeEn Semiconductors bta208x-1000c0.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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BTA208X-1000C0/L01 WeEn Semiconductors bta208x-1000c0.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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BYV32E-100,127 BYV32E-100,127 WeEn Semiconductors byv32e-100.pdf BYV32E-100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 501 шт:
термін постачання 21-30 дні (днів)
9+51.87 грн
10+40.98 грн
25+36.08 грн
100+32.65 грн
250+31.67 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV32E-150,127 BYV32E-150,127 WeEn Semiconductors byv32e-150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
9+51.87 грн
10+40.98 грн
25+36.08 грн
100+32.65 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV42E-150,127 BYV42E-150,127 WeEn Semiconductors byv42e-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
Max. load current: 30A
Max. forward voltage: 0.78V
Load current: 15A x2
Max. forward impulse current: 150A
Max. off-state voltage: 150V
Semiconductor structure: common cathode; double
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
5+92.30 грн
10+67.10 грн
25+60.57 грн
50+55.92 грн
100+51.51 грн
250+46.53 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV32EB-200,118 BYV32EB-200,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78292AEACF3A20259&compId=BYV32EB-200.pdf?ci_sign=9e0a942a6acdf47060359758fe6cbdfc3375fc40 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Max. forward impulse current: 137A
Kind of package: reel; tape
на замовлення 624 шт:
термін постачання 21-30 дні (днів)
4+130.98 грн
10+71.42 грн
25+62.36 грн
50+56.16 грн
60+54.69 грн
100+50.45 грн
250+43.43 грн
500+38.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTA208S-800B,118 BTA208S-800B,118 WeEn Semiconductors BTA208S-800B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208X-800B/L02Q WeEn Semiconductors bta208x-800b.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA445Z-800BTQ WeEn Semiconductors bta445z-800ct.pdf Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Features of semiconductor devices: high temperature
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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WNSC5D20650X6Q WNSC5D20650X6Q WeEn Semiconductors WNSC5D20650X6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. load current: 40A
Max. forward impulse current: 80A
Kind of package: tube
на замовлення 922 шт:
термін постачання 21-30 дні (днів)
3+165.27 грн
5+137.13 грн
25+121.63 грн
100+109.38 грн
Мінімальне замовлення: 3
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EC103D1,412 EC103D1,412 WeEn Semiconductors ec103d1.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 3µA
Mounting: THT
Kind of package: bulk
Turn-on time: 2µs
Load current: 0.5A
Max. forward impulse current: 8A
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NXPSC20650W-AQ NXPSC20650W-AQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
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WNSC6D20650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
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WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
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BYV32E-300PQ BYV32E-300PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD95B955CDB060C4&compId=BYV32E-300P.pdf?ci_sign=f7f7fbbc6a96b744d3417cbff690b8631c544806 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
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BYV32EB-200PJ BYV32EB-200PJ WeEn Semiconductors byv32eb-200p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
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BYV32EB-300PJ BYV32EB-300PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD963EBC3DB120C4&compId=BYV32EB-300P.pdf?ci_sign=44df4d4918ee7b2325f3c599d4aeb56c9a415f47 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
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BYV32EX-300PQ BYV32EX-300PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD964B10D38520C4&compId=BYV32EX-300P.pdf?ci_sign=4968244df9558922ddf562afb67bf6717b590dab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
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WNSCM80120R6Q WeEn Semiconductors WNSCM80120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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P1KSMBJ68CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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BT139-800.127 BT139-800.127 WeEn Semiconductors BT139-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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OT412,115 OT412,115 WeEn Semiconductors Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 776 шт:
термін постачання 21-30 дні (днів)
26+16.97 грн
32+12.90 грн
100+11.35 грн
250+11.10 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
WMSC030H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDE1A264DE80D6&compId=WMSC030H12B1P6T.pdf?ci_sign=1a4928565b4e4a2baa6b6b0a4d9949ba1263e13e Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: -4...18V
On-state resistance: 30mΩ
Drain current: 53A
Pulsed drain current: 100A
Power dissipation: 111W
Drain-source voltage: 1.2kV
Semiconductor structure: transistor/transistor
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BYC10DX-600,127 BYC10DX-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6AC27DCD60D5&compId=BYC10DX-600.pdf?ci_sign=72784e1a88ab44f95d463e89f3beb6ea0768e466 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)
9+49.23 грн
12+35.10 грн
25+32.32 грн
50+30.77 грн
100+28.65 грн
250+27.59 грн
500+27.02 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC10B-600,118 BYC10B-600,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2325FB5686259&compId=BYC10B-600.pdf?ci_sign=1fa5f9365fe1328c5d8d593c32875b05c581d6db pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
на замовлення 513 шт:
термін постачання 21-30 дні (днів)
8+57.14 грн
11+40.49 грн
25+32.65 грн
100+30.04 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC10X-600,127 BYC10X-600,127 WeEn Semiconductors Discrete%20Selection%20Guide%202011.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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BYC10X-600PQ BYC10X-600PQ WeEn Semiconductors byc10x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
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BYC10-600CT,127 BYC10-600CT,127 WeEn Semiconductors byc10-600ct.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 10A
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BYC10-600PQ BYC10-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20CFB45B1E0CE&compId=BYC10-600P.pdf?ci_sign=ada853b3a941e7c83c943836a29a0afe6383e10f Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
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BYC10D-600,127 BYC10D-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6EC898B540D5&compId=BYC10D-600.pdf?ci_sign=10bfc6fd004b7d73304ce6a3c2c434f15dfbaef6 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
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P1KSMBJ68AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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N0118GA,116 WeEn Semiconductors n0118ga.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
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N0118GA,412 WeEn Semiconductors n0118ga.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; bulk
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Kind of package: bulk
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N0118GAML WeEn Semiconductors n0118ga.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
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BT153B-1200T-AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
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BT153B-1200TJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
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TYN50W-1600TQ TYN50W-1600TQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDCBAC277B9820&compId=TYN50W-1600T.pdf?ci_sign=4b94774899f36d98da028e88df7bd126c2df78bb pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
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ESDAHD712BE2X ESDAHD712BE2X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACE001B9D4180C8&compId=ESDAHD712BE2.pdf?ci_sign=732c668f54258c115dccc206da2528d63153c94d Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Version: ESD
Manufacturer series: HD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Application: universal
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BYC20D-600PQ BYC20D-600PQ WeEn Semiconductors byc20d-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Case: SOD59; TO220AC
Kind of package: tube
Reverse recovery time: 20ns
Max. forward voltage: 1.97V
Load current: 20A
Max. forward impulse current: 275A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
8+59.78 грн
9+49.96 грн
25+43.75 грн
100+40.81 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC20-600,127 BYC20-600,127 WeEn Semiconductors byc20-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Case: SOD59; TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 2.34V
Load current: 20A
Max. forward impulse current: 274A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
6+79.12 грн
10+60.49 грн
100+46.20 грн
500+43.02 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMCJ36CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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TYN16X-600CT,127 TYN16X-600CT,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96F9D84335A0C4&compId=TYN16X-600CT.pdf?ci_sign=ed2831e90060c1f47ffa5681a55386d0d0f630b9 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
10+45.71 грн
25+29.22 грн
50+22.94 грн
100+17.71 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TYN16-600CT,127 WeEn Semiconductors tyn16-600ct.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
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TYN16-600RTQ WeEn Semiconductors tyn16-600rt.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16-800RTQ WeEn Semiconductors tyn16-800rt.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16S-600CTJ WeEn Semiconductors tyn16s-600ct.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 6mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 6mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
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BTA216X-600D,127 PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf
BTA216X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600F,127 bta216x-600e.pdf
BTA216X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYV29X-600,127 byv29x-600.pdf
BYV29X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
на замовлення 560 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.11 грн
50+22.45 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV29-600,127 BYV29-600%2C127.pdf BYV29600.pdf
BYV29-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+439.53 грн
В кошику  од. на суму  грн.
BYV29B-500,118 byv29b-500.pdf
BYV29B-500,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600PJ BYV29B-600P.pdf
BYV29B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Max. load current: 18A
Features of semiconductor devices: ultrafast switching
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BYV29F-600,127 PHGLS22517-1.pdf?t.download=true&u=5oefqw byv29f-600.pdf
BYV29F-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV29FX-600,127 BYV29FX-600.pdf _ween_psg2020.pdf
BYV29FX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600,118 byv29b-600.pdf
BYV29B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29D-600PJ byv29d-600p.pdf
BYV29D-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: DPAK
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
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BYV29FB-600,118 BYV29FB-600.pdf _ween_psg2020.pdf
BYV29FB-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29FD-600,118 byv29fd-600.pdf
BYV29FD-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 91A
Case: DPAK
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29G-600,127 byv29g-600.pdf
BYV29G-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; I2PAK; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: I2PAK
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
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P6SMBJ28CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BTA208X-1000C0,127 bta208x-1000c0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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BTA208X-1000C0/L01 bta208x-1000c0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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BYV32E-100,127 byv32e-100.pdf BYV32E-100.pdf
BYV32E-100,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 501 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+51.87 грн
10+40.98 грн
25+36.08 грн
100+32.65 грн
250+31.67 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV32E-150,127 byv32e-150.pdf
BYV32E-150,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+51.87 грн
10+40.98 грн
25+36.08 грн
100+32.65 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYV42E-150,127 byv42e-200.pdf
BYV42E-150,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
Max. load current: 30A
Max. forward voltage: 0.78V
Load current: 15A x2
Max. forward impulse current: 150A
Max. off-state voltage: 150V
Semiconductor structure: common cathode; double
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+92.30 грн
10+67.10 грн
25+60.57 грн
50+55.92 грн
100+51.51 грн
250+46.53 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYV32EB-200,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78292AEACF3A20259&compId=BYV32EB-200.pdf?ci_sign=9e0a942a6acdf47060359758fe6cbdfc3375fc40 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EB-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Max. forward impulse current: 137A
Kind of package: reel; tape
на замовлення 624 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+130.98 грн
10+71.42 грн
25+62.36 грн
50+56.16 грн
60+54.69 грн
100+50.45 грн
250+43.43 грн
500+38.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTA208S-800B,118 BTA208S-800B.pdf _ween_psg2020.pdf
BTA208S-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208X-800B/L02Q bta208x-800b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA445Z-800BTQ bta445z-800ct.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Features of semiconductor devices: high temperature
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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WNSC5D20650X6Q WNSC5D20650X6Q.pdf
WNSC5D20650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. load current: 40A
Max. forward impulse current: 80A
Kind of package: tube
на замовлення 922 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+165.27 грн
5+137.13 грн
25+121.63 грн
100+109.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
EC103D1,412 ec103d1.pdf
EC103D1,412
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 3µA
Mounting: THT
Kind of package: bulk
Turn-on time: 2µs
Load current: 0.5A
Max. forward impulse current: 8A
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NXPSC20650W-AQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
NXPSC20650W-AQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
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WNSC6D20650B6J pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
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WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
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BYV32E-300PQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD95B955CDB060C4&compId=BYV32E-300P.pdf?ci_sign=f7f7fbbc6a96b744d3417cbff690b8631c544806 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32E-300PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
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BYV32EB-200PJ byv32eb-200p.pdf
BYV32EB-200PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
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BYV32EB-300PJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD963EBC3DB120C4&compId=BYV32EB-300P.pdf?ci_sign=44df4d4918ee7b2325f3c599d4aeb56c9a415f47 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EB-300PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
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BYV32EX-300PQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD964B10D38520C4&compId=BYV32EX-300P.pdf?ci_sign=4968244df9558922ddf562afb67bf6717b590dab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EX-300PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
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WNSCM80120R6Q WNSCM80120R6Q.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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P1KSMBJ68CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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BT139-800.127 BT139-800.pdf _ween_psg2020.pdf
BT139-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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OT412,115
OT412,115
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 776 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
26+16.97 грн
32+12.90 грн
100+11.35 грн
250+11.10 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
WMSC030H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDE1A264DE80D6&compId=WMSC030H12B1P6T.pdf?ci_sign=1a4928565b4e4a2baa6b6b0a4d9949ba1263e13e
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: -4...18V
On-state resistance: 30mΩ
Drain current: 53A
Pulsed drain current: 100A
Power dissipation: 111W
Drain-source voltage: 1.2kV
Semiconductor structure: transistor/transistor
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BYC10DX-600,127 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6AC27DCD60D5&compId=BYC10DX-600.pdf?ci_sign=72784e1a88ab44f95d463e89f3beb6ea0768e466
BYC10DX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.23 грн
12+35.10 грн
25+32.32 грн
50+30.77 грн
100+28.65 грн
250+27.59 грн
500+27.02 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYC10B-600,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2325FB5686259&compId=BYC10B-600.pdf?ci_sign=1fa5f9365fe1328c5d8d593c32875b05c581d6db pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC10B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
на замовлення 513 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.14 грн
11+40.49 грн
25+32.65 грн
100+30.04 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC10X-600,127 Discrete%20Selection%20Guide%202011.pdf
BYC10X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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BYC10X-600PQ byc10x-600p.pdf
BYC10X-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
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BYC10-600CT,127 byc10-600ct.pdf
BYC10-600CT,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 10A
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BYC10-600PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20CFB45B1E0CE&compId=BYC10-600P.pdf?ci_sign=ada853b3a941e7c83c943836a29a0afe6383e10f
BYC10-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
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BYC10D-600,127 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6EC898B540D5&compId=BYC10D-600.pdf?ci_sign=10bfc6fd004b7d73304ce6a3c2c434f15dfbaef6
BYC10D-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
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P1KSMBJ68AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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N0118GA,116 n0118ga.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
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N0118GA,412 n0118ga.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; bulk
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Kind of package: bulk
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N0118GAML n0118ga.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
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BT153B-1200T-AJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
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BT153B-1200TJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
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TYN50W-1600TQ pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDCBAC277B9820&compId=TYN50W-1600T.pdf?ci_sign=4b94774899f36d98da028e88df7bd126c2df78bb pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
TYN50W-1600TQ
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
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ESDAHD712BE2X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACE001B9D4180C8&compId=ESDAHD712BE2.pdf?ci_sign=732c668f54258c115dccc206da2528d63153c94d
ESDAHD712BE2X
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Version: ESD
Manufacturer series: HD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Application: universal
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BYC20D-600PQ byc20d-600p.pdf
BYC20D-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Case: SOD59; TO220AC
Kind of package: tube
Reverse recovery time: 20ns
Max. forward voltage: 1.97V
Load current: 20A
Max. forward impulse current: 275A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+59.78 грн
9+49.96 грн
25+43.75 грн
100+40.81 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC20-600,127 byc20-600.pdf
BYC20-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Case: SOD59; TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 2.34V
Load current: 20A
Max. forward impulse current: 274A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+79.12 грн
10+60.49 грн
100+46.20 грн
500+43.02 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMCJ36CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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TYN16X-600CT,127 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96F9D84335A0C4&compId=TYN16X-600CT.pdf?ci_sign=ed2831e90060c1f47ffa5681a55386d0d0f630b9 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
TYN16X-600CT,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+45.71 грн
25+29.22 грн
50+22.94 грн
100+17.71 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TYN16-600CT,127 tyn16-600ct.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
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TYN16-600RTQ tyn16-600rt.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16-800RTQ tyn16-800rt.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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TYN16S-600CTJ tyn16s-600ct.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 6mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 6mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
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