Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5952) > Сторінка 90 з 100
Фото | Назва | Виробник | Інформація |
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BT152-500RT,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 500V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 20A Load current: 13A Gate current: 3mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 200A Turn-on time: 2µs |
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BT152B-400R,118 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 450V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 450V Max. load current: 20A Load current: 13A Gate current: 3mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 200A Turn-on time: 2µs |
на замовлення 647 шт: термін постачання 21-30 дні (днів) |
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BT152B-600R,118 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 200A Turn-on time: 2µs |
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BT152B-800R,118 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 200A Turn-on time: 2µs |
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BT152X-400R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 200A Turn-on time: 2µs |
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BT152X-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 200A Turn-on time: 2µs |
на замовлення 619 шт: термін постачання 21-30 дні (днів) |
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WNSC10650T6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 50A |
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WNSC10650WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 50A |
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NXPSC106506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 50A |
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NXPSC10650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 50A |
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NXPSC10650D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 50A |
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NXPSC10650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 50A |
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NXPLQSC106506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 48A |
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MURS160BJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Mounting: SMD Load current: 1A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 35A Kind of package: reel; tape Type of diode: rectifying Case: SMB Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 1.25V |
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BYC8-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Mounting: THT Case: SOD59; TO220AC Max. off-state voltage: 0.6kV Max. forward voltage: 1.85V Load current: 8A Semiconductor structure: single diode Reverse recovery time: 40ns Max. forward impulse current: 88A Kind of package: tube Type of diode: rectifying |
на замовлення 623 шт: термін постачання 21-30 дні (днів) |
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BYC5-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC Mounting: THT Max. off-state voltage: 1.2kV Case: SOD59; TO220AC Type of diode: rectifying Semiconductor structure: single diode Kind of package: tube Features of semiconductor devices: superfast switching Reverse recovery time: 42ns Max. forward impulse current: 55A Load current: 5A |
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BT169D-L,116 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 50uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 50µA Max. forward impulse current: 9A |
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BT169D,116 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; reel,tape Mounting: THT Case: TO92 Kind of package: reel; tape Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 10335 шт: термін постачання 21-30 дні (днів) |
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BT169D,126 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Max. forward impulse current: 9A Turn-on time: 2µs |
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BT169D/01,112 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Max. forward impulse current: 9A Turn-on time: 2µs |
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BT169DEP | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Max. forward impulse current: 9A Turn-on time: 2µs |
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WG50N65DHWQ | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 160nC Kind of package: tube Turn-on time: 123ns Turn-off time: 265ns Features of semiconductor devices: integrated anti-parallel diode |
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Z0109MA,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape |
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Z0109MA0,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
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Z0109NA,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
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Z0109NA0,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
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Z0109NN,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 10mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3043 шт: термін постачання 21-30 дні (днів) |
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Z0109NN0,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 2614 шт: термін постачання 21-30 дні (днів) |
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BYQ30E-200,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 88A Max. load current: 16A Max. off-state voltage: 200V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. forward voltage: 0.84V Mounting: THT Load current: 8A x2 |
на замовлення 312 шт: термін постачання 21-30 дні (днів) |
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BT137X-800,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 35/70mA Max. forward impulse current: 65A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO220FP |
на замовлення 994 шт: термін постачання 21-30 дні (днів) |
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BT137X-800/L02,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 35/70mA Max. forward impulse current: 65A Kind of package: tube Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO220FP |
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BT137X-800E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 10/25mA Max. forward impulse current: 65A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO220FP |
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BTA316-800B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 799 шт: термін постачання 21-30 дні (днів) |
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BTA316-800B0,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 917 шт: термін постачання 21-30 дні (днів) |
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BTA316-800C,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 35mA Max. load current: 16A |
на замовлення 963 шт: термін постачання 21-30 дні (днів) |
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BTA316-800CTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: high temperature Max. forward impulse current: 150A Type of thyristor: triac Gate current: 35mA Max. load current: 16A |
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BTA316-800E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 10mA Max. load current: 16A |
на замовлення 322 шт: термін постачання 21-30 дні (днів) |
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BTA316-800ET,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: high temperature; sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 10mA Max. load current: 16A |
на замовлення 764 шт: термін постачання 21-30 дні (днів) |
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BT137X-600,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 35/70mA Max. forward impulse current: 65A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO220FP |
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BT137X-600D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 5/10mA Max. forward impulse current: 65A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO220FP |
на замовлення 784 шт: термін постачання 21-30 дні (днів) |
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BT137X-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 5/10mA Max. forward impulse current: 65A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO220FP |
на замовлення 284 шт: термін постачання 21-30 дні (днів) |
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BT137X-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 25/70mA Max. forward impulse current: 65A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO220FP |
на замовлення 880 шт: термін постачання 21-30 дні (днів) |
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BT137X-600G,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 50/100mA Max. forward impulse current: 65A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Mounting: THT Case: TO220FP |
на замовлення 887 шт: термін постачання 21-30 дні (днів) |
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BT134-600,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 35/70mA; Ifsm: 25A; 4Q Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SIP3; SOT82 Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 35/70mA Max. forward impulse current: 25A |
на замовлення 772 шт: термін постачання 21-30 дні (днів) |
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BT134-600D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 5/10mA; Ifsm: 25A; 4Q Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SIP3; SOT82 Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 5/10mA Max. forward impulse current: 25A |
на замовлення 379 шт: термін постачання 21-30 дні (днів) |
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BT134-600G,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 50/100mA; Ifsm: 25A; 4Q Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SIP3; SOT82 Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 50/100mA Max. forward impulse current: 25A |
на замовлення 872 шт: термін постачання 21-30 дні (днів) |
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BT134-800,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 4A; SIP3,SOT82; Igt: 35/70mA; Ifsm: 25A; 4Q Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SIP3; SOT82 Max. off-state voltage: 0.8kV Max. load current: 4A Gate current: 35/70mA Max. forward impulse current: 25A |
на замовлення 917 шт: термін постачання 21-30 дні (днів) |
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BT134-800E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SIP3; SOT82 Max. off-state voltage: 0.8kV Max. load current: 4A Gate current: 10/25mA Max. forward impulse current: 25A |
на замовлення 570 шт: термін постачання 21-30 дні (днів) |
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BT134W-600,115 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; SOT223; Igt: 35/70mA; Ifsm: 10A; 4Q; sensitive gate Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SOT223 Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 35/70mA Max. forward impulse current: 10A |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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BT134W-600,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; SOT223; Igt: 35/70mA; Ifsm: 10A; 4Q; sensitive gate Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SOT223 Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 35/70mA Max. forward impulse current: 10A |
на замовлення 3833 шт: термін постачання 21-30 дні (днів) |
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BT134W-600D,115 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; SOT223; Igt: 5/10mA; Ifsm: 10A; 4Q; sensitive gate Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SOT223 Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 5/10mA Max. forward impulse current: 10A |
товар відсутній |
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BT134W-800,115 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; SOT223; Igt: 35/70mA; Ifsm: 10A; 4Q; sensitive gate Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SOT223 Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 35/70mA Max. forward impulse current: 10A |
на замовлення 459 шт: термін постачання 21-30 дні (днів) |
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ACTT2S-800E,118 | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD Mounting: SMD Gate current: 10mA Kind of package: reel; tape Type of thyristor: AC switch Case: DPAK Max. off-state voltage: 0.8kV Max. load current: 2A |
на замовлення 691 шт: термін постачання 21-30 дні (днів) |
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BTA2008-1000D,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com Case: TO92 Kind of package: Ammo Pack Features of semiconductor devices: logic level; sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Mounting: THT Max. off-state voltage: 1kV Max. load current: 0.8A Gate current: 5mA Max. forward impulse current: 9.9A |
товар відсутній |
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BTA2008W-600D,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 0.8A; SOT223; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com Case: SOT223 Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Mounting: SMD Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 5mA Max. forward impulse current: 9A |
на замовлення 3730 шт: термін постачання 21-30 дні (днів) |
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BTA2008W-800D,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 0.8A; SOT223; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com Case: SOT223 Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Mounting: SMD Max. off-state voltage: 0.8kV Max. load current: 0.8A Gate current: 5mA Max. forward impulse current: 9A |
на замовлення 3076 шт: термін постачання 21-30 дні (днів) |
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BTA201-600B,112 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 50mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товар відсутній |
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BTA201-600E,112 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товар відсутній |
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BTA201-800B,112 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 50mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товар відсутній |
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BTA201-800E,112 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товар відсутній |
BT152-500RT,127 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
товар відсутній
BT152B-400R,118 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 450V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 450V
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 450V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 450V
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
на замовлення 647 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 46.06 грн |
24+ | 34.34 грн |
66+ | 32.46 грн |
500+ | 31.63 грн |
BT152B-600R,118 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
товар відсутній
BT152B-800R,118 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Turn-on time: 2µs
товар відсутній
BT152X-400R,127 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
товар відсутній
BT152X-800R,127 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
на замовлення 619 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 46.06 грн |
23+ | 35.38 грн |
63+ | 33.44 грн |
WNSC10650T6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 50A
товар відсутній
WNSC10650WQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 50A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 50A
товар відсутній
NXPSC106506Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 50A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 50A
товар відсутній
NXPSC10650B6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 50A
товар відсутній
NXPSC10650D6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 50A
товар відсутній
NXPSC10650X6Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 50A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 50A
товар відсутній
NXPLQSC106506Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 48A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 48A
товар відсутній
MURS160BJ |
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
товар відсутній
BYC8-600,127 |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Mounting: THT
Case: SOD59; TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.85V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 40ns
Max. forward impulse current: 88A
Kind of package: tube
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Mounting: THT
Case: SOD59; TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.85V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 40ns
Max. forward impulse current: 88A
Kind of package: tube
Type of diode: rectifying
на замовлення 623 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 59.76 грн |
8+ | 43.7 грн |
10+ | 36.77 грн |
25+ | 32.6 грн |
33+ | 24.42 грн |
91+ | 23.1 грн |
BYC5-1200PQ |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Case: SOD59; TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Features of semiconductor devices: superfast switching
Reverse recovery time: 42ns
Max. forward impulse current: 55A
Load current: 5A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Case: SOD59; TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Features of semiconductor devices: superfast switching
Reverse recovery time: 42ns
Max. forward impulse current: 55A
Load current: 5A
товар відсутній
BT169D-L,116 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 50uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Max. forward impulse current: 9A
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 50uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Max. forward impulse current: 9A
товар відсутній
BT169D,116 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; reel,tape
Mounting: THT
Case: TO92
Kind of package: reel; tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; reel,tape
Mounting: THT
Case: TO92
Kind of package: reel; tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 10335 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
54+ | 7.02 грн |
63+ | 5.52 грн |
100+ | 4.74 грн |
211+ | 3.82 грн |
579+ | 3.61 грн |
2000+ | 3.47 грн |
BT169D,126 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
товар відсутній
BT169D/01,112 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
товар відсутній
BT169DEP |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 200uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Max. forward impulse current: 9A
Turn-on time: 2µs
товар відсутній
WG50N65DHWQ |
Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 265ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 265ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
Z0109MA,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
товар відсутній
Z0109MA0,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товар відсутній
Z0109NA,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товар відсутній
Z0109NA0,412 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товар відсутній
Z0109NN,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3043 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 16.96 грн |
44+ | 8.05 грн |
100+ | 7.42 грн |
136+ | 5.9 грн |
374+ | 5.55 грн |
2000+ | 5.41 грн |
Z0109NN0,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 2614 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 17.41 грн |
42+ | 8.32 грн |
100+ | 7.49 грн |
131+ | 6.14 грн |
359+ | 5.8 грн |
BYQ30E-200,127 |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 88A
Max. load current: 16A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.84V
Mounting: THT
Load current: 8A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 88A
Max. load current: 16A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.84V
Mounting: THT
Load current: 8A x2
на замовлення 312 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 57.52 грн |
11+ | 31.91 грн |
25+ | 24.97 грн |
36+ | 22.82 грн |
98+ | 21.57 грн |
BT137X-800,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 35/70mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 35/70mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
на замовлення 994 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 49.3 грн |
13+ | 28.16 грн |
25+ | 22.54 грн |
41+ | 19.63 грн |
113+ | 18.52 грн |
BT137X-800/L02,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 35/70mA
Max. forward impulse current: 65A
Kind of package: tube
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 35/70mA
Max. forward impulse current: 65A
Kind of package: tube
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
товар відсутній
BT137X-800E,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 10/25mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 10/25mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
товар відсутній
BTA316-800B,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 799 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 49.3 грн |
11+ | 32.74 грн |
25+ | 30.11 грн |
33+ | 24.9 грн |
89+ | 23.52 грн |
500+ | 22.89 грн |
BTA316-800B0,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 917 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 49.3 грн |
9+ | 39.96 грн |
25+ | 33.3 грн |
67+ | 31.49 грн |
500+ | 30.24 грн |
BTA316-800C,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
на замовлення 963 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 97.12 грн |
5+ | 81.16 грн |
13+ | 62.43 грн |
36+ | 58.96 грн |
BTA316-800CTQ |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature
Max. forward impulse current: 150A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature
Max. forward impulse current: 150A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
товар відсутній
BTA316-800E,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
на замовлення 322 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 47.06 грн |
9+ | 40.23 грн |
25+ | 35.59 грн |
27+ | 30.52 грн |
73+ | 28.86 грн |
250+ | 28.3 грн |
BTA316-800ET,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
на замовлення 764 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 44.12 грн |
24+ | 34.34 грн |
65+ | 32.46 грн |
500+ | 31.22 грн |
BT137X-600,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 35/70mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 35/70mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
товар відсутній
BT137X-600D,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5/10mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5/10mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
на замовлення 784 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 30.11 грн |
14+ | 25.18 грн |
40+ | 20.12 грн |
110+ | 19.01 грн |
250+ | 18.66 грн |
BT137X-600E,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5/10mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5/10mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
на замовлення 284 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 38.85 грн |
14+ | 26.36 грн |
25+ | 24.42 грн |
42+ | 19.56 грн |
113+ | 18.52 грн |
BT137X-600F,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 25/70mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 25/70mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
на замовлення 880 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 49.3 грн |
11+ | 33.09 грн |
13+ | 26.85 грн |
30+ | 24.14 грн |
41+ | 19.63 грн |
113+ | 18.59 грн |
BT137X-600G,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 50/100mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 50/100mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO220FP
на замовлення 887 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 49.3 грн |
14+ | 26.36 грн |
25+ | 23.03 грн |
39+ | 20.74 грн |
100+ | 20.46 грн |
107+ | 19.63 грн |
500+ | 18.94 грн |
BT134-600,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 35/70mA; Ifsm: 25A; 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SIP3; SOT82
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 35/70mA
Max. forward impulse current: 25A
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 35/70mA; Ifsm: 25A; 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SIP3; SOT82
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 35/70mA
Max. forward impulse current: 25A
на замовлення 772 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 64.25 грн |
14+ | 26.36 грн |
25+ | 24.28 грн |
41+ | 20.03 грн |
111+ | 18.94 грн |
500+ | 18.24 грн |
BT134-600D,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 5/10mA; Ifsm: 25A; 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SIP3; SOT82
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 5/10mA
Max. forward impulse current: 25A
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 5/10mA; Ifsm: 25A; 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SIP3; SOT82
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 5/10mA
Max. forward impulse current: 25A
на замовлення 379 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 49.3 грн |
16+ | 21.78 грн |
25+ | 17.76 грн |
53+ | 15.26 грн |
145+ | 14.43 грн |
BT134-600G,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 50/100mA; Ifsm: 25A; 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SIP3; SOT82
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 50/100mA
Max. forward impulse current: 25A
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 50/100mA; Ifsm: 25A; 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SIP3; SOT82
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 50/100mA
Max. forward impulse current: 25A
на замовлення 872 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 22.93 грн |
19+ | 19.15 грн |
25+ | 16.86 грн |
55+ | 14.71 грн |
151+ | 13.87 грн |
500+ | 13.73 грн |
BT134-800,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; SIP3,SOT82; Igt: 35/70mA; Ifsm: 25A; 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SIP3; SOT82
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35/70mA
Max. forward impulse current: 25A
Category: Triacs
Description: Triac; 800V; 4A; SIP3,SOT82; Igt: 35/70mA; Ifsm: 25A; 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SIP3; SOT82
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35/70mA
Max. forward impulse current: 25A
на замовлення 917 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 50.05 грн |
16+ | 21.92 грн |
25+ | 19.7 грн |
50+ | 16.37 грн |
136+ | 15.47 грн |
BT134-800E,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SIP3; SOT82
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10/25mA
Max. forward impulse current: 25A
Category: Triacs
Description: Triac; 800V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SIP3; SOT82
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10/25mA
Max. forward impulse current: 25A
на замовлення 570 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 23.16 грн |
25+ | 19.28 грн |
52+ | 15.68 грн |
141+ | 14.84 грн |
BT134W-600,115 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 35/70mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 35/70mA
Max. forward impulse current: 10A
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 35/70mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 35/70mA
Max. forward impulse current: 10A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 35.11 грн |
14+ | 26.36 грн |
25+ | 22.13 грн |
68+ | 11.86 грн |
187+ | 11.17 грн |
BT134W-600,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 35/70mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 35/70mA
Max. forward impulse current: 10A
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 35/70mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 35/70mA
Max. forward impulse current: 10A
на замовлення 3833 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 16.96 грн |
25+ | 14.36 грн |
65+ | 12.49 грн |
177+ | 11.79 грн |
1000+ | 11.38 грн |
BT134W-600D,115 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/10mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Max. forward impulse current: 10A
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/10mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Max. forward impulse current: 10A
товар відсутній
BT134W-800,115 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 35/70mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 35/70mA
Max. forward impulse current: 10A
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 35/70mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 35/70mA
Max. forward impulse current: 10A
на замовлення 459 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
21+ | 17.93 грн |
25+ | 14.98 грн |
64+ | 12.63 грн |
176+ | 11.93 грн |
250+ | 11.86 грн |
ACTT2S-800E,118 |
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
Type of thyristor: AC switch
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 2A
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
Type of thyristor: AC switch
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 2A
на замовлення 691 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.29 грн |
16+ | 22.27 грн |
25+ | 19.49 грн |
50+ | 16.3 грн |
137+ | 15.4 грн |
BTA2008-1000D,126 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com
Case: TO92
Kind of package: Ammo Pack
Features of semiconductor devices: logic level; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Max. off-state voltage: 1kV
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9.9A
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com
Case: TO92
Kind of package: Ammo Pack
Features of semiconductor devices: logic level; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Max. off-state voltage: 1kV
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9.9A
товар відсутній
BTA2008W-600D,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Case: SOT223
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: SMD
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Case: SOT223
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: SMD
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
на замовлення 3730 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 13.3 грн |
35+ | 11.1 грн |
95+ | 8.46 грн |
265+ | 8.05 грн |
BTA2008W-800D,135 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 0.8A; SOT223; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Case: SOT223
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: SMD
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Category: Triacs
Description: Triac; 800V; 0.8A; SOT223; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Case: SOT223
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: SMD
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
на замовлення 3076 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 16.43 грн |
30+ | 11.86 грн |
93+ | 8.67 грн |
254+ | 8.25 грн |
BTA201-600B,112 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
товар відсутній
BTA201-600E,112 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
товар відсутній
BTA201-800B,112 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
товар відсутній
BTA201-800E,112 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
товар відсутній