Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5472) > Сторінка 90 з 92
| Фото | Назва | Виробник | Інформація |
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| SMAJ18AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20.19...21.9V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ACT108W-600E,135 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 10mA Case: SOT223 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: internally triggered |
на замовлення 2391 шт: термін постачання 14-30 дні (днів) |
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ACT108W-600D,135 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 5mA Case: SOT223 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: internally triggered |
на замовлення 3805 шт: термін постачання 14-30 дні (днів) |
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| MURS160BJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BYC15X-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 39ns |
на замовлення 974 шт: термін постачання 14-30 дні (днів) |
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BYC15X-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 19ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYC15-1200PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 180A Case: SOD59; TO220AC Max. forward voltage: 2V Reverse recovery time: 61ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BYC15M-650PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: SOD59; TO220AC Max. forward voltage: 2.3V Reverse recovery time: 14ns Max. load current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA45-800BQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q Case: SOT1292; TO3P Mounting: THT Kind of package: tube Gate current: 50mA Features of semiconductor devices: high temperature Type of thyristor: triac Technology: 4Q Max. load current: 45A Max. forward impulse current: 495A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BYV32EB-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 137A Case: D2PAK; SOT404 Max. forward voltage: 0.72V Max. load current: 20A Reverse recovery time: 25ns |
на замовлення 332 шт: термін постачання 14-30 дні (днів) |
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BYV10MX-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: tube Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT145-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 5mA Max. forward impulse current: 0.3kA Mounting: THT Kind of package: tube Turn-on time: 2µs Load current: 16A |
на замовлення 3391 шт: термін постачання 14-30 дні (днів) |
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| BT139X-600F/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 25/70mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BYC30MW-650PT2Q | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns Kind of package: tube Features of semiconductor devices: ultrafast switching Reverse recovery time: 20ns Max. forward voltage: 1.8V Load current: 30A Max. load current: 60A Max. forward impulse current: 270A Max. off-state voltage: 650V Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO247-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BYC80MW-650PT2Q | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns Kind of package: tube Features of semiconductor devices: ultrafast switching Reverse recovery time: 120ns Max. forward voltage: 1.9V Load current: 80A Max. load current: 160A Max. forward impulse current: 0.6kA Max. off-state voltage: 650V Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO247-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BUJ100LR,412 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92 Mounting: THT Kind of package: bulk Type of transistor: NPN Collector current: 1A Power dissipation: 2.1W Current gain: 5...20 Collector-emitter voltage: 400V Polarisation: bipolar Case: TO92 |
на замовлення 4094 шт: термін постачання 14-30 дні (днів) |
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BTA312-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1779 шт: термін постачання 14-30 дні (днів) |
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| P6SMAL75AX | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Mounting: SMD Max. off-state voltage: 75V Semiconductor structure: unidirectional Case: SMA flat Max. forward impulse current: 5A Leakage current: 1µA Kind of package: reel; tape Breakdown voltage: 83.3...92.1V Peak pulse power dissipation: 0.6kW Manufacturer series: P6SMAL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| P6SMAL36AX | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Mounting: SMD Max. off-state voltage: 36V Semiconductor structure: unidirectional Case: SMA flat Max. forward impulse current: 10.4A Leakage current: 1µA Kind of package: reel; tape Breakdown voltage: 40...44.2V Peak pulse power dissipation: 0.6kW Manufacturer series: P6SMAL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT168GW,115 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 1A Load current: 0.63A Gate current: 50µA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 859 шт: термін постачання 14-30 дні (днів) |
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BT168G,112 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50µA Case: TO92 Mounting: THT Kind of package: bulk Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 715 шт: термін постачання 14-30 дні (днів) |
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BT168GWF,115 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 1A Load current: 0.63A Gate current: 450µA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 9A |
на замовлення 218 шт: термін постачання 14-30 дні (днів) |
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BT168E,112 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us Mounting: THT Case: TO92 Kind of package: bulk Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 8A Type of thyristor: thyristor Max. off-state voltage: 500V Turn-on time: 2µs Gate current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BT168GW,135 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 1A Load current: 0.63A Gate current: 50µA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 8A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BYV29-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 77A Case: SOD59; TO220AC Max. forward voltage: 1.45V Reverse recovery time: 60ns |
на замовлення 913 шт: термін постачання 14-30 дні (днів) |
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NXPLQSC106506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Case: TO220AC Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Max. forward voltage: 1.85V Load current: 10A Max. forward impulse current: 48A Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYV42E-150,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 0.78V Max. load current: 30A Heatsink thickness: max. 1.3mm Reverse recovery time: 28ns |
на замовлення 341 шт: термін постачання 14-30 дні (днів) |
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BYV42EB-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 15A x2 Reverse recovery time: 28ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 0.85V Max. load current: 30A Max. forward impulse current: 160A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MUR560J | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.35V Max. forward impulse current: 130A Kind of package: reel; tape |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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BT134-600E.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: SIP3; SOT82 Gate current: 10/25mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT148-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Case: SIP3; SOT82 Gate current: 15µA Max. forward impulse current: 35A Mounting: THT Kind of package: tube Turn-on time: 2µs Load current: 2.5A |
на замовлення 383 шт: термін постачання 14-30 дні (днів) |
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Z0103MA,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Mounting: THT Kind of package: bulk Technology: 4Q Features of semiconductor devices: sensitive gate |
на замовлення 4160 шт: термін постачання 14-30 дні (днів) |
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Z0103MA,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Mounting: THT Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: sensitive gate |
на замовлення 101 шт: термін постачання 14-30 дні (днів) |
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Z0103MA,126 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Mounting: THT Kind of package: Ammo Pack Technology: 4Q Features of semiconductor devices: sensitive gate |
на замовлення 211 шт: термін постачання 14-30 дні (днів) |
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| Z0103MA0,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 12.5A Mounting: THT Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| Z0103NA,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| Z0103NA0,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| Z0103NA0QP | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT258S-800R,118 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 75A Turn-on time: 2µs |
на замовлення 1960 шт: термін постачання 14-30 дні (днів) |
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BT258-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
на замовлення 1234 шт: термін постачання 14-30 дні (днів) |
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BT258-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 8A Load current: 5A Gate current: 0.2mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
на замовлення 988 шт: термін постачання 14-30 дні (днів) |
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BT258S-800LT,118 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 75A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT258U-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: IPAK Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT258X-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT258X-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT258X-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA312-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 701 шт: термін постачання 14-30 дні (днів) |
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BTA312-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA312-800ET,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA312-800C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMCJ15CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 16.86÷18.33V; 61.5A; bidirectional; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.86...18.33V Max. forward impulse current: 61.5A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BYV32E-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.72V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
на замовлення 4957 шт: термін постачання 14-30 дні (днів) |
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BYV32E-100,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Case: SOT78; TO220AB Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. forward impulse current: 137A Kind of package: tube Features of semiconductor devices: ultrafast switching Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm Max. load current: 20A |
на замовлення 1186 шт: термін постачання 14-30 дні (днів) |
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BYV32E-150,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
на замовлення 200 шт: термін постачання 14-30 дні (днів) |
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| BYV32E-200PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 125A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Reverse recovery time: 18ns Heatsink thickness: 1.25...1.4mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BYV32E-300PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 220A Case: SOT78; TO220AB Max. forward voltage: 1.25V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYV32EB-200PJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 125A Case: D2PAK; SOT404 Max. forward voltage: 0.85V Max. load current: 20A Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYV32EB-300PJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 220A Case: D2PAK; SOT404 Max. forward voltage: 1.25V Max. load current: 20A Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYV32EX-300PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 220A Case: SOD113; TO220FP-2 Max. forward voltage: 1.25V Max. load current: 20A Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MCR100W-10MF | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 1kV Max. load current: 1.25A Load current: 0.8A Gate current: 90µA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 23A |
товару немає в наявності |
В кошику од. на суму грн. |
| SMAJ18AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
В кошику
од. на суму грн.
| ACT108W-600E,135 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
на замовлення 2391 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.30 грн |
| 27+ | 15.89 грн |
| 50+ | 13.27 грн |
| 100+ | 13.10 грн |
| ACT108W-600D,135 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
на замовлення 3805 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.95 грн |
| 18+ | 23.66 грн |
| 28+ | 15.29 грн |
| 100+ | 14.45 грн |
| 500+ | 12.76 грн |
| MURS160BJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BYC15X-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
на замовлення 974 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.15 грн |
| 10+ | 45.29 грн |
| 25+ | 39.55 грн |
| 100+ | 36.25 грн |
| BYC15X-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
товару немає в наявності
В кошику
од. на суму грн.
| BYC15-1200PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
товару немає в наявності
В кошику
од. на суму грн.
| BYC15M-650PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
товару немає в наявності
В кошику
од. на суму грн.
| BTA45-800BQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 4Q
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 4Q
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| BYV32EB-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 137A
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 137A
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Reverse recovery time: 25ns
на замовлення 332 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 132.86 грн |
| 10+ | 70.81 грн |
| 25+ | 63.38 грн |
| 50+ | 57.88 грн |
| 60+ | 56.45 грн |
| 100+ | 52.47 грн |
| 250+ | 45.46 грн |
| BYV10MX-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
В кошику
од. на суму грн.
| BT145-800R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 0.3kA
Mounting: THT
Kind of package: tube
Turn-on time: 2µs
Load current: 16A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 0.3kA
Mounting: THT
Kind of package: tube
Turn-on time: 2µs
Load current: 16A
на замовлення 3391 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 173.81 грн |
| 5+ | 125.06 грн |
| 10+ | 109.00 грн |
| 25+ | 91.26 грн |
| 50+ | 80.28 грн |
| 100+ | 71.82 грн |
| 500+ | 57.46 грн |
| 1000+ | 54.08 грн |
| 2000+ | 50.70 грн |
| BT139X-600F/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BYC30MW-650PT2Q |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 20ns
Max. forward voltage: 1.8V
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 270A
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 20ns
Max. forward voltage: 1.8V
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 270A
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
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| BYC80MW-650PT2Q |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 120ns
Max. forward voltage: 1.9V
Load current: 80A
Max. load current: 160A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 120ns
Max. forward voltage: 1.9V
Load current: 80A
Max. load current: 160A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
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| BUJ100LR,412 |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Mounting: THT
Kind of package: bulk
Type of transistor: NPN
Collector current: 1A
Power dissipation: 2.1W
Current gain: 5...20
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Mounting: THT
Kind of package: bulk
Type of transistor: NPN
Collector current: 1A
Power dissipation: 2.1W
Current gain: 5...20
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO92
на замовлення 4094 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.38 грн |
| 36+ | 11.75 грн |
| 45+ | 9.52 грн |
| 100+ | 7.41 грн |
| 500+ | 5.45 грн |
| 1000+ | 4.88 грн |
| BTA312-800CT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1779 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.33 грн |
| 10+ | 46.22 грн |
| 11+ | 40.64 грн |
| 30+ | 36.50 грн |
| 100+ | 35.15 грн |
| P6SMAL75AX |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 83.3...92.1V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMAL
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 83.3...92.1V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMAL
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| P6SMAL36AX |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 10.4A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 40...44.2V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMAL
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 10.4A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 40...44.2V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMAL
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| BT168GW,115 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 859 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.85 грн |
| 20+ | 21.55 грн |
| 24+ | 18.34 грн |
| 100+ | 12.59 грн |
| 500+ | 9.21 грн |
| BT168G,112 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 715 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.75 грн |
| 32+ | 13.44 грн |
| 39+ | 10.98 грн |
| 100+ | 8.87 грн |
| 500+ | 6.84 грн |
| BT168GWF,115 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 450µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 450µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
на замовлення 218 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.67 грн |
| 22+ | 19.52 грн |
| 100+ | 12.08 грн |
| BT168E,112 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 500V
Turn-on time: 2µs
Gate current: 50µA
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 500V
Turn-on time: 2µs
Gate current: 50µA
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| BT168GW,135 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
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| BYV29-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
на замовлення 913 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.87 грн |
| 13+ | 33.21 грн |
| 100+ | 30.00 грн |
| 500+ | 23.58 грн |
| NXPLQSC106506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.85V
Load current: 10A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.85V
Load current: 10A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
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| BYV42E-150,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
на замовлення 341 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.55 грн |
| 10+ | 69.46 грн |
| 25+ | 62.70 грн |
| 50+ | 57.88 грн |
| 100+ | 53.32 грн |
| 250+ | 47.74 грн |
| BYV42EB-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
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| MUR560J |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 94 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.68 грн |
| 17+ | 25.27 грн |
| BT134-600E.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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од. на суму грн.
| BT148-600R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 15µA
Max. forward impulse current: 35A
Mounting: THT
Kind of package: tube
Turn-on time: 2µs
Load current: 2.5A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 15µA
Max. forward impulse current: 35A
Mounting: THT
Kind of package: tube
Turn-on time: 2µs
Load current: 2.5A
на замовлення 383 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.50 грн |
| 12+ | 37.60 грн |
| 50+ | 30.67 грн |
| 100+ | 27.72 грн |
| 250+ | 24.00 грн |
| Z0103MA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 4160 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 37.31 грн |
| 16+ | 27.38 грн |
| 19+ | 23.24 грн |
| 100+ | 13.01 грн |
| 500+ | 9.46 грн |
| 1000+ | 8.45 грн |
| 2000+ | 7.77 грн |
| Z0103MA,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 101 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.75 грн |
| 25+ | 17.41 грн |
| 100+ | 12.08 грн |
| Z0103MA,126 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 211 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.12 грн |
| 24+ | 18.25 грн |
| 100+ | 9.89 грн |
| Z0103MA0,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| Z0103NA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
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| Z0103NA0,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
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| Z0103NA0QP |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
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| BT258S-800R,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 1960 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 87.36 грн |
| 10+ | 52.81 грн |
| 25+ | 44.78 грн |
| 100+ | 35.24 грн |
| 500+ | 27.04 грн |
| 1000+ | 24.34 грн |
| BT258-600R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 1234 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.88 грн |
| 12+ | 37.94 грн |
| 100+ | 29.32 грн |
| 500+ | 24.93 грн |
| 1000+ | 23.41 грн |
| BT258-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 988 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 62.79 грн |
| 10+ | 48.00 грн |
| 100+ | 35.57 грн |
| 500+ | 29.32 грн |
| BT258S-800LT,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 75A
Turn-on time: 2µs
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| BT258U-600R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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| BT258X-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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| BT258X-600R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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| BT258X-800R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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| BTA312-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 701 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.87 грн |
| 10+ | 44.11 грн |
| 25+ | 39.63 грн |
| 100+ | 34.98 грн |
| 500+ | 33.04 грн |
| BTA312-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA312-800ET,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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| BTA312-800C,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| SMCJ15CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.86÷18.33V; 61.5A; bidirectional; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.86...18.33V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.86÷18.33V; 61.5A; bidirectional; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.86...18.33V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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| BYV32E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.72V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.72V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 4957 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.01 грн |
| 7+ | 69.29 грн |
| 10+ | 57.46 грн |
| 50+ | 48.16 грн |
| 100+ | 46.48 грн |
| 500+ | 43.94 грн |
| BYV32E-100,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Case: SOT78; TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 137A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Case: SOT78; TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 137A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 20A
на замовлення 1186 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.69 грн |
| 10+ | 42.42 грн |
| 25+ | 37.35 грн |
| 100+ | 33.80 грн |
| 250+ | 32.79 грн |
| BYV32E-150,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 200 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.69 грн |
| 10+ | 42.42 грн |
| 25+ | 37.35 грн |
| 100+ | 33.80 грн |
| BYV32E-200PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 18ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 18ns
Heatsink thickness: 1.25...1.4mm
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| BYV32E-300PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
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| BYV32EB-200PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
товару немає в наявності
В кошику
од. на суму грн.
| BYV32EB-300PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 220A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 220A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
товару немає в наявності
В кошику
од. на суму грн.
| BYV32EX-300PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
товару немає в наявності
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од. на суму грн.
| MCR100W-10MF |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
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од. на суму грн.















