Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5754) > Сторінка 90 з 96
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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| MAC97A8/DG,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT139-600-0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT139-600G0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT138-600-0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50/100mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 95A Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT138-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 95A Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA204X-800C/L03Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA416X-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 35mA Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 160A Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA410-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA416X-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 160A Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA408X-1000C0T,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Case: TO220FP Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT134W-800EF | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 2A Case: SOT223 Gate current: 10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3612 шт: термін постачання 14-30 дні (днів) |
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| SMAJ5.0CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.45...6.98V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 0.4mA Manufacturer series: SMAJ Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
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BT138Y-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 824 шт: термін постачання 14-30 дні (днів) |
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| BT136-600D/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT136-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT151-650LTFQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT151S-650SJ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 0.2mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 90A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| BT169D/DG,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Case: TO92 Mounting: THT Max. forward impulse current: 9A Quantity in set/package: 2000pcs. Turn-on time: 2µs Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169G-L,412 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 8A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169G-MQP | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 8A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169G/DG,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 8A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169H-LML | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Gate current: 100µA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169H/01U | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Gate current: 100µA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT137-800G0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 950 шт: термін постачання 14-30 дні (днів) |
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BYV42E-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 1V Max. load current: 30A Reverse recovery time: 28ns Heatsink thickness: max. 1.3mm |
на замовлення 719 шт: термін постачання 14-30 дні (днів) |
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| WNSC5D20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 100A Kind of package: tube Max. load current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA445Z-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Kind of package: tube Type of thyristor: triac Features of semiconductor devices: high temperature Technology: 3Q; Hi-Com Gate current: 50mA Max. load current: 45A Max. forward impulse current: 495A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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WNSC5D20650X6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 2.2V Max. forward impulse current: 80A Kind of package: tube Max. load current: 40A |
на замовлення 828 шт: термін постачання 14-30 дні (днів) |
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BTA208S-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 10mA Max. forward impulse current: 65A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com |
на замовлення 8796 шт: термін постачання 14-30 дні (днів) |
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NXPSC126506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. forward impulse current: 72A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC12650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.7V Max. forward impulse current: 72A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
| BTA416B-800BTJ | WeEn Semiconductors |
Category: Unclassified Description: BTA416B-800BTJ |
на замовлення 4800 шт: термін постачання 14-30 дні (днів) |
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BYV29-500.127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 110A Case: SOD59; TO220AC Max. forward voltage: 0.9V Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYV29-500,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 110A Case: SOD59; TO220AC Max. forward voltage: 0.9V Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
на замовлення 1335 шт: термін постачання 14-30 дні (днів) |
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BYC15-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC Max. off-state voltage: 0.6kV Load current: 15A Case: SOD59; TO220AC Mounting: THT Kind of package: tube Max. forward impulse current: 200A Type of diode: rectifying Semiconductor structure: single diode Features of semiconductor devices: superfast switching Reverse recovery time: 19ns Max. forward voltage: 1.4V |
на замовлення 318 шт: термін постачання 14-30 дні (днів) |
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BYC15-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC Max. off-state voltage: 0.6kV Max. load current: 30A Load current: 15A Case: SOD59; TO220AC Mounting: THT Kind of package: tube Max. forward impulse current: 180A Type of diode: rectifying Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Reverse recovery time: 18ns Max. forward voltage: 2V |
на замовлення 771 шт: термін постачання 14-30 дні (днів) |
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BTA216-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMAJ18AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20.19...21.9V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
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ACT108W-600E,135 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD Type of thyristor: AC switch Max. load current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Gate current: 10mA Max. off-state voltage: 0.6kV Features of semiconductor devices: internally triggered |
на замовлення 2091 шт: термін постачання 14-30 дні (днів) |
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ACT108W-600D,135 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD Type of thyristor: AC switch Max. load current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Gate current: 5mA Max. off-state voltage: 0.6kV Features of semiconductor devices: internally triggered |
на замовлення 3800 шт: термін постачання 14-30 дні (днів) |
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| MURS160BJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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BYV32EB-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Reverse recovery time: 25ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 0.72V Max. load current: 20A Max. forward impulse current: 137A Kind of package: reel; tape |
на замовлення 327 шт: термін постачання 14-30 дні (днів) |
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BYV10MX-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: tube Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT145-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 5mA Max. forward impulse current: 0.3kA Mounting: THT Kind of package: tube Turn-on time: 2µs Load current: 16A |
на замовлення 2128 шт: термін постачання 14-30 дні (днів) |
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BUJ100LR,412 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 2.1W Case: TO92 Current gain: 5...20 Mounting: THT Kind of package: bulk |
на замовлення 3454 шт: термін постачання 14-30 дні (днів) |
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BT168GW,115 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape Mounting: SMD Case: SOT223 Max. off-state voltage: 0.6kV Kind of package: reel; tape Type of thyristor: thyristor Turn-on time: 2µs Gate current: 50µA Load current: 0.63A Max. load current: 1A Max. forward impulse current: 8A |
на замовлення 844 шт: термін постачання 14-30 дні (днів) |
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BT168G,112 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us Mounting: THT Case: TO92 Max. off-state voltage: 0.6kV Kind of package: bulk Type of thyristor: thyristor Turn-on time: 2µs Gate current: 50µA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 8A |
на замовлення 710 шт: термін постачання 14-30 дні (днів) |
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BT168GWF,115 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape Mounting: SMD Case: SOT223 Max. off-state voltage: 0.6kV Kind of package: reel; tape Type of thyristor: thyristor Gate current: 450µA Load current: 0.63A Max. load current: 1A Max. forward impulse current: 9A |
на замовлення 1013 шт: термін постачання 14-30 дні (днів) |
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BT168E,112 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us Mounting: THT Case: TO92 Max. off-state voltage: 500V Kind of package: bulk Type of thyristor: thyristor Turn-on time: 2µs Gate current: 50µA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 8A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BT168GW,135 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape Mounting: SMD Case: SOT223 Max. off-state voltage: 0.6kV Kind of package: reel; tape Type of thyristor: thyristor Turn-on time: 2µs Gate current: 50µA Load current: 0.63A Max. load current: 1A Max. forward impulse current: 8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NXPLQSC106506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.85V Max. forward impulse current: 48A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BYV42E-150,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 0.78V Max. load current: 30A Reverse recovery time: 28ns Heatsink thickness: max. 1.3mm |
на замовлення 871 шт: термін постачання 14-30 дні (днів) |
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BYV42EB-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 160A Case: D2PAK; SOT404 Max. forward voltage: 0.85V Max. load current: 30A Reverse recovery time: 28ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MUR560J | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.35V Max. forward impulse current: 130A Kind of package: reel; tape |
на замовлення 4852 шт: термін постачання 14-30 дні (днів) |
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BT134-600E.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: SIP3; SOT82 Gate current: 10/25mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT148-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Mounting: THT Case: SIP3; SOT82 Kind of package: tube Type of thyristor: thyristor Turn-on time: 2µs Gate current: 15µA Load current: 2.5A Max. load current: 4A Max. forward impulse current: 35A Max. off-state voltage: 0.6kV |
на замовлення 353 шт: термін постачання 14-30 дні (днів) |
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Z0103MA,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Mounting: THT Kind of package: bulk Technology: 4Q Features of semiconductor devices: sensitive gate |
на замовлення 2842 шт: термін постачання 14-30 дні (днів) |
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Z0103MA,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Mounting: THT Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: sensitive gate |
на замовлення 99 шт: термін постачання 14-30 дні (днів) |
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Z0103MA,126 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 8A Mounting: THT Kind of package: Ammo Pack Technology: 4Q Features of semiconductor devices: sensitive gate |
на замовлення 210 шт: термін постачання 14-30 дні (днів) |
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| Z0103MA0,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3/5mA Max. forward impulse current: 12.5A Mounting: THT Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. |
| MAC97A8/DG,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| BT139-600-0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT139-600G0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT138-600-0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| BT138-600/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| BTA204X-800C/L03Q |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA416X-800CTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 160A
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 160A
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA410-800BT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA416X-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA408X-1000C0T,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT134W-800EF |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3612 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 54.31 грн |
| 16+ | 27.40 грн |
| 100+ | 16.39 грн |
| 250+ | 14.71 грн |
| 500+ | 13.11 грн |
| 1000+ | 11.77 грн |
| SMAJ5.0CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.4mA
Manufacturer series: SMAJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.4mA
Manufacturer series: SMAJ
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BT138Y-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 824 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 57.93 грн |
| 11+ | 39.84 грн |
| 50+ | 35.47 грн |
| 250+ | 31.86 грн |
| 500+ | 29.75 грн |
| BT136-600D/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT136-600/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT151-650LTFQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
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| BT151S-650SJ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 0.2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 90A
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 0.2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 90A
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| BT169D/DG,126 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Max. forward impulse current: 9A
Quantity in set/package: 2000pcs.
Turn-on time: 2µs
Kind of package: Ammo Pack
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Max. forward impulse current: 9A
Quantity in set/package: 2000pcs.
Turn-on time: 2µs
Kind of package: Ammo Pack
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| BT169G-L,412 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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| BT169G-MQP |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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| BT169G/DG,126 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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| BT169H-LML |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
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| BT169H/01U |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
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| BT137-800G0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 57.03 грн |
| 13+ | 34.29 грн |
| 50+ | 30.01 грн |
| 250+ | 25.89 грн |
| 500+ | 24.21 грн |
| BYV42E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1V
Max. load current: 30A
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1V
Max. load current: 30A
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
на замовлення 719 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 80.56 грн |
| 8+ | 58.84 грн |
| 10+ | 49.59 грн |
| 50+ | 47.91 грн |
| WNSC5D20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
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| BTA445Z-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
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| WNSC5D20650X6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
на замовлення 828 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 170.17 грн |
| 5+ | 141.21 грн |
| 25+ | 125.24 грн |
| 100+ | 112.63 грн |
| BTA208S-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 65A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 65A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
на замовлення 8796 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 76.94 грн |
| 10+ | 53.79 грн |
| 25+ | 45.30 грн |
| 50+ | 39.76 грн |
| 100+ | 35.22 грн |
| 250+ | 30.68 грн |
| 500+ | 27.82 грн |
| 1000+ | 25.55 грн |
| 2500+ | 23.20 грн |
| NXPSC126506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
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Мінімальне замовлення: 1000 шт
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| NXPSC12650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BTA416B-800BTJ |
на замовлення 4800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1600+ | 36.12 грн |
| BYV29-500.127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
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| BYV29-500,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 1335 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 64.27 грн |
| 10+ | 42.03 грн |
| 11+ | 39.08 грн |
| 25+ | 35.64 грн |
| 50+ | 33.20 грн |
| 100+ | 30.93 грн |
| 500+ | 29.50 грн |
| BYC15-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Max. off-state voltage: 0.6kV
Load current: 15A
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 19ns
Max. forward voltage: 1.4V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Max. off-state voltage: 0.6kV
Load current: 15A
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 19ns
Max. forward voltage: 1.4V
на замовлення 318 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 50.69 грн |
| 11+ | 39.67 грн |
| 25+ | 35.22 грн |
| BYC15-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 15A
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 18ns
Max. forward voltage: 2V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 15A
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 18ns
Max. forward voltage: 2V
на замовлення 771 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 64.27 грн |
| 50+ | 32.78 грн |
| BTA216-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| SMAJ18AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ACT108W-600E,135 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. load current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. load current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
на замовлення 2091 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 27.16 грн |
| 27+ | 15.80 грн |
| 50+ | 13.20 грн |
| 100+ | 13.03 грн |
| ACT108W-600D,135 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD
Type of thyristor: AC switch
Max. load current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Gate current: 5mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD
Type of thyristor: AC switch
Max. load current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Gate current: 5mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
на замовлення 3800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 40.73 грн |
| 18+ | 23.53 грн |
| 28+ | 15.21 грн |
| 100+ | 14.37 грн |
| 500+ | 12.69 грн |
| MURS160BJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BYV32EB-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Max. forward impulse current: 137A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Max. forward impulse current: 137A
Kind of package: reel; tape
на замовлення 327 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 134.87 грн |
| 10+ | 70.69 грн |
| 50+ | 58.50 грн |
| 60+ | 57.16 грн |
| 100+ | 53.46 грн |
| 250+ | 46.82 грн |
| BYV10MX-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BT145-800R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 0.3kA
Mounting: THT
Kind of package: tube
Turn-on time: 2µs
Load current: 16A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 0.3kA
Mounting: THT
Kind of package: tube
Turn-on time: 2µs
Load current: 16A
на замовлення 2128 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 183.75 грн |
| 5+ | 137.84 грн |
| 10+ | 120.19 грн |
| 25+ | 99.18 грн |
| 50+ | 86.57 грн |
| 100+ | 77.33 грн |
| 500+ | 63.88 грн |
| 750+ | 62.20 грн |
| 1000+ | 60.52 грн |
| BUJ100LR,412 |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
на замовлення 3454 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 28+ | 16.29 грн |
| 36+ | 11.68 грн |
| 45+ | 9.47 грн |
| 100+ | 7.37 грн |
| 500+ | 5.42 грн |
| 1000+ | 4.85 грн |
| BT168GW,115 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 8A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 8A
на замовлення 844 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 31.68 грн |
| 20+ | 21.43 грн |
| 24+ | 18.24 грн |
| 100+ | 12.52 грн |
| 500+ | 9.16 грн |
| BT168G,112 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
Kind of package: bulk
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
Kind of package: bulk
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
на замовлення 710 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 22.63 грн |
| 32+ | 13.36 грн |
| 39+ | 10.93 грн |
| 100+ | 8.83 грн |
| 500+ | 6.81 грн |
| BT168GWF,115 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 450µA
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 9A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 450µA
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 9A
на замовлення 1013 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 38.02 грн |
| 19+ | 23.03 грн |
| 100+ | 12.94 грн |
| 500+ | 9.25 грн |
| 1000+ | 8.15 грн |
| BT168E,112 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Max. off-state voltage: 500V
Kind of package: bulk
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Max. off-state voltage: 500V
Kind of package: bulk
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
товару немає в наявності
В кошику
од. на суму грн.
| BT168GW,135 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 8A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 8A
товару немає в наявності
В кошику
од. на суму грн.
| NXPLQSC106506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BYV42E-150,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Max. load current: 30A
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Max. load current: 30A
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
на замовлення 871 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 95.04 грн |
| 10+ | 69.09 грн |
| 25+ | 62.37 грн |
| 50+ | 57.58 грн |
| 100+ | 53.04 грн |
| 250+ | 47.32 грн |
| 500+ | 45.22 грн |
| BYV42EB-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Reverse recovery time: 28ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Reverse recovery time: 28ns
товару немає в наявності
В кошику
од. на суму грн.
| MUR560J |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 4852 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 43.45 грн |
| 17+ | 25.13 грн |
| 100+ | 16.31 грн |
| 500+ | 12.61 грн |
| 1000+ | 11.35 грн |
| 3000+ | 9.83 грн |
| BT134-600E.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| BT148-600R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
на замовлення 353 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 45.26 грн |
| 12+ | 37.40 грн |
| 50+ | 30.51 грн |
| 100+ | 27.57 грн |
| 250+ | 23.87 грн |
| Z0103MA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 2842 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 39.83 грн |
| 15+ | 28.41 грн |
| 18+ | 23.79 грн |
| 100+ | 12.69 грн |
| 500+ | 9.33 грн |
| 1000+ | 8.49 грн |
| 2000+ | 7.90 грн |
| Z0103MA,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 22.63 грн |
| 25+ | 17.31 грн |
| Z0103MA,126 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 210 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 28.97 грн |
| 24+ | 18.16 грн |
| 100+ | 9.83 грн |
| Z0103MA0,116 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/5mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/5mA
Max. forward impulse current: 12.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
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