Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6002) > Сторінка 90 з 101
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BT136-600,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1472 шт: термін постачання 21-30 дні (днів) |
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BT136-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1022 шт: термін постачання 21-30 дні (днів) |
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BT136-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate |
на замовлення 484 шт: термін постачання 21-30 дні (днів) |
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| BT136-600E/L01,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT136-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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BT136B-600E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: D2PAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: tube |
на замовлення 764 шт: термін постачання 21-30 дні (днів) |
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BT136B-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: D2PAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 557 шт: термін постачання 21-30 дні (днів) |
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BT136S-600,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; DPAK; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT136S-600D,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 1588 шт: термін постачання 21-30 дні (днів) |
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BT136S-600E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 1437 шт: термін постачання 21-30 дні (днів) |
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BT136S-600F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 25/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT136S-800,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; DPAK; Igt: 35/75mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 35/75mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 531 шт: термін постачання 21-30 дні (днів) |
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BT136S-800DJ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 159 шт: термін постачання 21-30 дні (днів) |
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BT136S-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3062 шт: термін постачання 21-30 дні (днів) |
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BT136S-800F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 25/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT136X-600,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 73 шт: термін постачання 21-30 дні (днів) |
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BT136X-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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WNSC16650CWQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.7V Max. load current: 16A Max. forward impulse current: 48A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC166506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Case: TO220AC Max. forward voltage: 1.7V Load current: 16A Max. forward impulse current: 96A Max. off-state voltage: 650V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC16650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.7V Max. forward impulse current: 96A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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WNSC2D16650CWQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 1.8V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 48A Max. off-state voltage: 650V Semiconductor structure: common cathode; double Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT151S-500L,118 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 5mA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 1457 шт: термін постачання 21-30 дні (днів) |
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BTA208X-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 607 шт: термін постачання 21-30 дні (днів) |
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BTA212-600B/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 831 шт: термін постачання 21-30 дні (днів) |
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BTA212-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA212-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 743 шт: термін постачання 21-30 дні (днів) |
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BTA212-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA312-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 442 шт: термін постачання 21-30 дні (днів) |
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| BTA312-600B/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 110A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BTA312-600C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA312-600CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 474 шт: термін постачання 21-30 дні (днів) |
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BYV32E-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.72V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PHD13003C,126 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92 Features of semiconductor devices: integrated anti-parallel diode Type of transistor: NPN Mounting: THT Case: TO92 Collector current: 1.5A Power dissipation: 2.1W Current gain: 8...25 Collector-emitter voltage: 700V Kind of package: Ammo Pack Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PHE13003A,412 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92 Type of transistor: NPN Mounting: THT Case: TO92 Collector current: 1A Power dissipation: 2.1W Current gain: 5...30 Collector-emitter voltage: 400V Kind of package: bulk Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PHE13003C,126 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92 Type of transistor: NPN Mounting: THT Case: TO92 Collector current: 1.5A Power dissipation: 2.1W Current gain: 5...25 Collector-emitter voltage: 400V Kind of package: Ammo Pack Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PHE13003C,412 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92 Type of transistor: NPN Mounting: THT Case: TO92 Collector current: 1.5A Power dissipation: 2.1W Current gain: 5...25 Collector-emitter voltage: 400V Kind of package: bulk Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT139-600,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220AB Gate current: 35/70mA Features of semiconductor devices: sensitive gate Kind of package: tube Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac |
на замовлення 988 шт: термін постачання 21-30 дні (днів) |
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BT139-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220AB Gate current: 10/25mA Features of semiconductor devices: sensitive gate Kind of package: tube Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac |
на замовлення 748 шт: термін постачання 21-30 дні (днів) |
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BT139-600E/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220AB Gate current: 10/25mA Features of semiconductor devices: sensitive gate Kind of package: tube Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac |
на замовлення 844 шт: термін постачання 21-30 дні (днів) |
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BT139-800,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220AB Gate current: 35/70mA Features of semiconductor devices: sensitive gate Kind of package: tube Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Technology: 4Q Type of thyristor: triac |
на замовлення 2706 шт: термін постачання 21-30 дні (днів) |
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BT139-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220AB Gate current: 10/25mA Features of semiconductor devices: sensitive gate Kind of package: tube Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Technology: 4Q Type of thyristor: triac |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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BT139-800G,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220AB Gate current: 50/100mA Features of semiconductor devices: sensitive gate Kind of package: tube Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Technology: 4Q Type of thyristor: triac |
на замовлення 597 шт: термін постачання 21-30 дні (днів) |
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BT139B-600,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Gate current: 35/70mA Features of semiconductor devices: sensitive gate Kind of package: reel; tape Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac |
на замовлення 612 шт: термін постачання 21-30 дні (днів) |
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BT139B-600E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Gate current: 10/25mA Features of semiconductor devices: sensitive gate Kind of package: reel; tape Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac |
на замовлення 412 шт: термін постачання 21-30 дні (днів) |
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BT139B-600F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Gate current: 25/70mA Features of semiconductor devices: sensitive gate Kind of package: reel; tape Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT139B-600G,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 50/100mA; Ifsm: 155A; 4Q Mounting: SMD Case: D2PAK Gate current: 50/100mA Features of semiconductor devices: sensitive gate Kind of package: reel; tape Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT139B-800,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Gate current: 35/70mA Features of semiconductor devices: sensitive gate Kind of package: reel; tape Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Technology: 4Q Type of thyristor: triac |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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BT139B-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Gate current: 10/25mA Features of semiconductor devices: sensitive gate Kind of package: reel; tape Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Technology: 4Q Type of thyristor: triac |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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BT139B-800F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Gate current: 25/70mA Features of semiconductor devices: sensitive gate Kind of package: reel; tape Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Technology: 4Q Type of thyristor: triac |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT139B-800G,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 50/100mA; Ifsm: 155A; 4Q Mounting: SMD Case: D2PAK Gate current: 50/100mA Features of semiconductor devices: sensitive gate Kind of package: reel; tape Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Technology: 4Q Type of thyristor: triac |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT139X-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 10/25mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220FP Gate current: 10/25mA Features of semiconductor devices: sensitive gate Kind of package: tube Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac |
на замовлення 407 шт: термін постачання 21-30 дні (днів) |
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BT139X-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220FP Gate current: 25/70mA Features of semiconductor devices: sensitive gate Kind of package: tube Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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BT139X-600G,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 50/100mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220FP Gate current: 50/100mA Features of semiconductor devices: sensitive gate Kind of package: tube Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac |
на замовлення 731 шт: термін постачання 21-30 дні (днів) |
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BT139X-800,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220FP Gate current: 35/70mA Features of semiconductor devices: sensitive gate Kind of package: tube Max. load current: 16A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Technology: 4Q Type of thyristor: triac |
на замовлення 466 шт: термін постачання 21-30 дні (днів) |
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BTA216-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube Max. forward impulse current: 140A Technology: 3Q; Hi-Com |
на замовлення 700 шт: термін постачання 21-30 дні (днів) |
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BT151-1000RT,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1kV; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 1kV Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 1576 шт: термін постачання 21-30 дні (днів) |
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BT151-500C,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 20A Turn-on time: 2µs |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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BT151-500L,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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BT151-650C,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 15mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 15mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 100A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT151-650L,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 651 шт: термін постачання 21-30 дні (днів) |
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| BT136-600,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1472 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.93 грн |
| 11+ | 37.04 грн |
| 50+ | 28.71 грн |
| 100+ | 25.88 грн |
| 500+ | 20.54 грн |
| 750+ | 19.33 грн |
| 1000+ | 18.60 грн |
| BT136-600D,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1022 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.93 грн |
| 12+ | 36.23 грн |
| 25+ | 31.54 грн |
| 50+ | 28.55 грн |
| 100+ | 25.88 грн |
| 500+ | 20.62 грн |
| 1000+ | 18.68 грн |
| BT136-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
на замовлення 484 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.93 грн |
| 11+ | 37.12 грн |
| 25+ | 31.94 грн |
| 50+ | 28.71 грн |
| 100+ | 25.88 грн |
| BT136-600E/L01,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| BT136-800E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.12 грн |
| 11+ | 37.44 грн |
| 25+ | 32.59 грн |
| 100+ | 26.28 грн |
| 500+ | 20.54 грн |
| BT136B-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: tube
на замовлення 764 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.99 грн |
| 100+ | 30.49 грн |
| 500+ | 24.42 грн |
| BT136B-800E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 557 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.48 грн |
| 11+ | 39.46 грн |
| 100+ | 27.50 грн |
| 500+ | 21.59 грн |
| BT136S-600,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BT136S-600D,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1588 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.93 грн |
| 11+ | 39.46 грн |
| 100+ | 24.83 грн |
| 500+ | 19.25 грн |
| 1000+ | 18.20 грн |
| BT136S-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1437 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.80 грн |
| 10+ | 41.24 грн |
| 100+ | 27.66 грн |
| 500+ | 21.27 грн |
| 1000+ | 19.33 грн |
| BT136S-600F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BT136S-800,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 35/75mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 35/75mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 35/75mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 35/75mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 531 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.77 грн |
| 11+ | 37.20 грн |
| 16+ | 25.88 грн |
| 30+ | 21.27 грн |
| 100+ | 19.25 грн |
| BT136S-800DJ |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 159 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.43 грн |
| 25+ | 23.21 грн |
| 100+ | 20.86 грн |
| BT136S-800E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3062 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.93 грн |
| 11+ | 39.54 грн |
| 100+ | 26.44 грн |
| 250+ | 22.72 грн |
| 500+ | 20.38 грн |
| 1000+ | 18.28 грн |
| 2500+ | 18.03 грн |
| BT136S-800F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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| BT136X-600,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 73 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.93 грн |
| 11+ | 38.09 грн |
| 50+ | 28.71 грн |
| BT136X-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| WNSC16650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
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| NXPSC166506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Max. forward voltage: 1.7V
Load current: 16A
Max. forward impulse current: 96A
Max. off-state voltage: 650V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Max. forward voltage: 1.7V
Load current: 16A
Max. forward impulse current: 96A
Max. off-state voltage: 650V
Kind of package: tube
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| NXPSC16650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
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| WNSC2D16650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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| BT151S-500L,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 5mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 5mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 1457 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.38 грн |
| 100+ | 22.97 грн |
| 500+ | 21.27 грн |
| BTA208X-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 607 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.22 грн |
| 10+ | 45.85 грн |
| 100+ | 35.82 грн |
| 500+ | 29.52 грн |
| BTA212-600B/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 831 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.86 грн |
| 10+ | 52.00 грн |
| 25+ | 45.69 грн |
| 50+ | 41.57 грн |
| 100+ | 37.77 грн |
| 500+ | 37.68 грн |
| BTA212-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA212-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 743 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.77 грн |
| 10+ | 40.68 грн |
| 12+ | 36.07 грн |
| 30+ | 35.26 грн |
| BTA212-600F,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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од. на суму грн.
| BTA312-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 442 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.77 грн |
| 12+ | 33.96 грн |
| 14+ | 30.41 грн |
| 30+ | 26.85 грн |
| 100+ | 26.36 грн |
| BTA312-600B/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 110A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 110A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA312-600C,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA312-600CT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 474 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.19 грн |
| 10+ | 51.03 грн |
| 100+ | 40.76 грн |
| BYV32E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.72V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.72V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
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| PHD13003C,126 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 8...25
Collector-emitter voltage: 700V
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 8...25
Collector-emitter voltage: 700V
Kind of package: Ammo Pack
Polarisation: bipolar
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| PHE13003A,412 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1A
Power dissipation: 2.1W
Current gain: 5...30
Collector-emitter voltage: 400V
Kind of package: bulk
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1A
Power dissipation: 2.1W
Current gain: 5...30
Collector-emitter voltage: 400V
Kind of package: bulk
Polarisation: bipolar
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| PHE13003C,126 |
![]() |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 5...25
Collector-emitter voltage: 400V
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 5...25
Collector-emitter voltage: 400V
Kind of package: Ammo Pack
Polarisation: bipolar
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| PHE13003C,412 |
![]() |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 5...25
Collector-emitter voltage: 400V
Kind of package: bulk
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 5...25
Collector-emitter voltage: 400V
Kind of package: bulk
Polarisation: bipolar
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| BT139-600,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 35/70mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 35/70mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
на замовлення 988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.45 грн |
| 10+ | 50.95 грн |
| 20+ | 47.31 грн |
| 40+ | 42.94 грн |
| 50+ | 42.21 грн |
| 100+ | 38.57 грн |
| 500+ | 35.18 грн |
| BT139-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
на замовлення 748 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 97.54 грн |
| 7+ | 60.33 грн |
| 10+ | 53.45 грн |
| 25+ | 46.09 грн |
| 50+ | 41.65 грн |
| 100+ | 37.68 грн |
| 500+ | 30.41 грн |
| BT139-600E/DG,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
на замовлення 844 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.06 грн |
| 12+ | 34.29 грн |
| 100+ | 31.05 грн |
| BT139-800,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 35/70mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 35/70mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
на замовлення 2706 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.02 грн |
| 7+ | 61.30 грн |
| 10+ | 54.75 грн |
| 25+ | 47.71 грн |
| 50+ | 43.26 грн |
| 100+ | 39.46 грн |
| 500+ | 32.02 грн |
| 1000+ | 29.44 грн |
| 2000+ | 28.38 грн |
| BT139-800E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 102.76 грн |
| 10+ | 46.09 грн |
| 50+ | 39.79 грн |
| 100+ | 37.36 грн |
| BT139-800G,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 50/100mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Gate current: 50/100mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
на замовлення 597 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.38 грн |
| 10+ | 51.67 грн |
| 100+ | 40.68 грн |
| 500+ | 34.05 грн |
| BT139B-600,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 35/70mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 35/70mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
на замовлення 612 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 106.25 грн |
| 10+ | 63.24 грн |
| 100+ | 40.11 грн |
| 500+ | 31.86 грн |
| BT139B-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
на замовлення 412 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.51 грн |
| 11+ | 38.74 грн |
| 100+ | 30.33 грн |
| BT139B-600F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 25/70mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 25/70mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
товару немає в наявності
В кошику
од. на суму грн.
| BT139B-600G,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: SMD
Case: D2PAK
Gate current: 50/100mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: SMD
Case: D2PAK
Gate current: 50/100mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
товару немає в наявності
В кошику
од. на суму грн.
| BT139B-800,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 35/70mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 35/70mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
на замовлення 330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.87 грн |
| 10+ | 44.32 грн |
| 25+ | 39.87 грн |
| 100+ | 35.26 грн |
| BT139B-800E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
на замовлення 960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.87 грн |
| 10+ | 42.21 грн |
| 25+ | 37.12 грн |
| 100+ | 32.75 грн |
| 500+ | 30.33 грн |
| BT139B-800F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 25/70mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Gate current: 25/70mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
товару немає в наявності
В кошику
од. на суму грн.
| BT139B-800G,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: SMD
Case: D2PAK
Gate current: 50/100mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: SMD
Case: D2PAK
Gate current: 50/100mA
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
товару немає в наявності
В кошику
од. на суму грн.
| BT139X-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10/25mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220FP
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10/25mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220FP
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
на замовлення 407 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 99.28 грн |
| 10+ | 54.26 грн |
| 25+ | 47.47 грн |
| 50+ | 43.02 грн |
| 100+ | 39.14 грн |
| BT139X-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220FP
Gate current: 25/70mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220FP
Gate current: 25/70mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.80 грн |
| 10+ | 54.59 грн |
| 50+ | 46.50 грн |
| 100+ | 43.02 грн |
| 250+ | 38.49 грн |
| 500+ | 35.18 грн |
| 1000+ | 31.78 грн |
| BT139X-600G,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220FP
Gate current: 50/100mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220FP
Gate current: 50/100mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
на замовлення 731 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 40.76 грн |
| 25+ | 35.34 грн |
| 100+ | 31.21 грн |
| 500+ | 28.95 грн |
| BT139X-800,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220FP
Gate current: 35/70mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220FP
Gate current: 35/70mA
Features of semiconductor devices: sensitive gate
Kind of package: tube
Max. load current: 16A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Technology: 4Q
Type of thyristor: triac
на замовлення 466 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.99 грн |
| 10+ | 54.10 грн |
| 100+ | 44.88 грн |
| BTA216-800B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
на замовлення 700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.83 грн |
| 9+ | 48.68 грн |
| 25+ | 42.94 грн |
| 100+ | 38.57 грн |
| 500+ | 35.66 грн |
| BT151-1000RT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 1576 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.90 грн |
| 10+ | 47.71 грн |
| 25+ | 41.49 грн |
| 50+ | 37.44 грн |
| 100+ | 33.80 грн |
| 500+ | 27.01 грн |
| 1000+ | 24.66 грн |
| BT151-500C,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 20A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 20A
Turn-on time: 2µs
на замовлення 242 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.03 грн |
| 11+ | 38.01 грн |
| 25+ | 35.42 грн |
| BT151-500L,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.83 грн |
| BT151-650C,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
| BT151-650L,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 651 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.87 грн |
| 12+ | 36.39 грн |
| 14+ | 30.57 грн |
| 30+ | 27.50 грн |
| 100+ | 24.34 грн |








