Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6492) > Сторінка 97 з 109
Фото | Назва | Виробник | Інформація |
Доступність |
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BT139X-600,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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Z0107MA,116 | WeEn Semiconductors |
![]() Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Mounting: THT Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q |
на замовлення 3776 шт: термін постачання 21-30 дні (днів) |
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Z0107MA,412 | WeEn Semiconductors |
![]() Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 7mA Mounting: THT Kind of package: bulk Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Max. forward impulse current: 8.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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Z0107MN,135 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 1342 шт: термін постачання 21-30 дні (днів) |
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Z0107MN0,135 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3574 шт: термін постачання 21-30 дні (днів) |
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Z0107NA,412 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
Z0107NA0,412 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
Z0107NA0QP | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
Z0107NN,135 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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Z0107NN0,135 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 507 шт: термін постачання 21-30 дні (днів) |
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BT137-800,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 65A Features of semiconductor devices: sensitive gate |
на замовлення 464 шт: термін постачання 21-30 дні (днів) |
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BT137-800E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 65A Features of semiconductor devices: sensitive gate |
на замовлення 355 шт: термін постачання 21-30 дні (днів) |
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BT137B-600E,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; D2PAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: D2PAK Gate current: 10/25mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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BT137B-600F,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: D2PAK Gate current: 25/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 561 шт: термін постачання 21-30 дні (днів) |
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BT137B-800,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 8A; D2PAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
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BT137B-800F,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 25/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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BT137B-800G,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; D2PAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 389 шт: термін постачання 21-30 дні (днів) |
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BT137S-600,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; DPAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 35/70mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 65A Technology: 4Q |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BT137S-600D,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 5/10mA Max. forward impulse current: 65A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q |
на замовлення 766 шт: термін постачання 21-30 дні (днів) |
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BT137S-600E,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 10/25mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 65A Technology: 4Q |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT137S-600F,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 25/70mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 65A Technology: 4Q |
на замовлення 1425 шт: термін постачання 21-30 дні (днів) |
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BT138-600E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 340 шт: термін постачання 21-30 дні (днів) |
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BTA440Z-800BTQ | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/80mA; Ifsm: 400A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Gate current: 50/80mA Type of thyristor: triac Features of semiconductor devices: high temperature; sensitive gate Max. load current: 40A Max. forward impulse current: 0.4kA Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
на замовлення 443 шт: термін постачання 21-30 дні (днів) |
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BTA208S-800E,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 10mA Technology: 3Q; Hi-Com Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 65A |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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BT150S-600R,118 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Load current: 2.5A Gate current: 15µA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 35A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT136-600,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT136-600D,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1034 шт: термін постачання 21-30 дні (днів) |
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BT136-600E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1715 шт: термін постачання 21-30 дні (днів) |
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BT136-600E/L01,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BT136-800E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1045 шт: термін постачання 21-30 дні (днів) |
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BT136B-600E,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: D2PAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: tube |
на замовлення 772 шт: термін постачання 21-30 дні (днів) |
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BT136B-800E,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: D2PAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 557 шт: термін постачання 21-30 дні (днів) |
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BT136S-600,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; DPAK; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT136S-600D,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3045 шт: термін постачання 21-30 дні (днів) |
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BT136S-600E,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 1449 шт: термін постачання 21-30 дні (днів) |
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BT136S-600F,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 25/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT136S-800,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; DPAK; Igt: 35/75mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 35/75mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 533 шт: термін постачання 21-30 дні (днів) |
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BT136S-800DJ | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 161 шт: термін постачання 21-30 дні (днів) |
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BT136S-800E,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 2340 шт: термін постачання 21-30 дні (днів) |
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BT136S-800F,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 25/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT136X-600,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 573 шт: термін постачання 21-30 дні (днів) |
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BT136X-600D,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220FP; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WNSC16650CWQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 16A Max. forward impulse current: 48A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NXPSC166506Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 96A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NXPSC16650B6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: D2PAK Max. forward impulse current: 96A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WNSC2D16650CWQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 1.8V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 48A Max. off-state voltage: 650V Semiconductor structure: common cathode; double Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT151S-500L,118 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 5mA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 1457 шт: термін постачання 21-30 дні (днів) |
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BTA208X-600B,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 727 шт: термін постачання 21-30 дні (днів) |
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BTA212-600B/DG,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 844 шт: термін постачання 21-30 дні (днів) |
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BTA212-600D,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA212-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 963 шт: термін постачання 21-30 дні (днів) |
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BTA212-600F,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA312-600B,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 895 шт: термін постачання 21-30 дні (днів) |
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BTA312-600B/DG,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 110A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BTA312-600C,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA312-600CT,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 476 шт: термін постачання 21-30 дні (днів) |
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BYV32E-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.72V Max. load current: 20A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PHD13003C,126 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92 Features of semiconductor devices: integrated anti-parallel diode Type of transistor: NPN Mounting: THT Case: TO92 Collector current: 1.5A Power dissipation: 2.1W Current gain: 8...25 Collector-emitter voltage: 700V Kind of package: Ammo Pack Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PHE13003A,412 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92 Type of transistor: NPN Mounting: THT Case: TO92 Collector current: 1A Power dissipation: 2.1W Current gain: 5...30 Collector-emitter voltage: 400V Kind of package: bulk Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PHE13003C,126 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92 Type of transistor: NPN Mounting: THT Case: TO92 Collector current: 1.5A Power dissipation: 2.1W Current gain: 5...25 Collector-emitter voltage: 400V Kind of package: Ammo Pack Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. |
BT139X-600,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 795 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.42 грн |
10+ | 57.38 грн |
30+ | 31.58 грн |
82+ | 29.84 грн |
Z0107MA,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
на замовлення 3776 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.09 грн |
27+ | 14.72 грн |
46+ | 8.79 грн |
100+ | 7.91 грн |
130+ | 7.12 грн |
358+ | 6.81 грн |
2000+ | 6.57 грн |
Z0107MA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Max. forward impulse current: 8.5A
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Max. forward impulse current: 8.5A
товару немає в наявності
В кошику
од. на суму грн.
Z0107MN,135 | ![]() |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1342 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.68 грн |
17+ | 23.82 грн |
50+ | 17.25 грн |
100+ | 14.48 грн |
104+ | 9.02 грн |
284+ | 8.55 грн |
Z0107MN0,135 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3574 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.95 грн |
19+ | 21.37 грн |
23+ | 17.41 грн |
100+ | 10.05 грн |
140+ | 6.65 грн |
385+ | 6.25 грн |
Z0107NA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
Z0107NA0,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
Z0107NA0QP |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
Z0107NN,135 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
Z0107NN0,135 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 507 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.98 грн |
16+ | 25.01 грн |
18+ | 23.03 грн |
100+ | 15.20 грн |
140+ | 6.65 грн |
384+ | 6.33 грн |
BT137-800,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
на замовлення 464 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.22 грн |
10+ | 41.79 грн |
25+ | 36.25 грн |
38+ | 25.09 грн |
102+ | 23.74 грн |
BT137-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
на замовлення 355 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.63 грн |
10+ | 44.32 грн |
25+ | 37.75 грн |
41+ | 22.87 грн |
112+ | 21.61 грн |
BT137B-600E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.26 грн |
13+ | 31.50 грн |
25+ | 28.18 грн |
BT137B-600F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 561 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.73 грн |
13+ | 31.90 грн |
15+ | 26.75 грн |
30+ | 24.06 грн |
40+ | 23.27 грн |
100+ | 21.29 грн |
BT137B-800,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 144 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.81 грн |
10+ | 44.80 грн |
25+ | 42.11 грн |
41+ | 22.87 грн |
112+ | 21.61 грн |
BT137B-800F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 73.30 грн |
11+ | 39.02 грн |
BT137B-800G,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 389 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.96 грн |
11+ | 38.62 грн |
25+ | 32.45 грн |
42+ | 22.32 грн |
115+ | 21.05 грн |
BT137S-600,118 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35/70mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35/70mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.34 грн |
10+ | 41.31 грн |
53+ | 17.73 грн |
145+ | 16.78 грн |
BT137S-600D,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 65A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 65A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
на замовлення 766 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.37 грн |
9+ | 46.70 грн |
10+ | 41.79 грн |
46+ | 20.34 грн |
126+ | 19.23 грн |
BT137S-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
товару немає в наявності
В кошику
од. на суму грн.
BT137S-600F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 25/70mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 25/70mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
на замовлення 1425 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 26.00 грн |
25+ | 22.00 грн |
50+ | 18.97 грн |
135+ | 17.94 грн |
500+ | 17.49 грн |
BT138-600E,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 340 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 83.53 грн |
10+ | 55.01 грн |
15+ | 52.63 грн |
25+ | 49.55 грн |
33+ | 28.26 грн |
91+ | 26.75 грн |
BTA440Z-800BTQ |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/80mA; Ifsm: 400A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Gate current: 50/80mA
Type of thyristor: triac
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/80mA; Ifsm: 400A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Gate current: 50/80mA
Type of thyristor: triac
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
на замовлення 443 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 244.63 грн |
7+ | 137.72 грн |
19+ | 129.80 грн |
BTA208S-800E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
на замовлення 46 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.26 грн |
10+ | 46.70 грн |
25+ | 41.63 грн |
39+ | 23.98 грн |
BT150S-600R,118 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
BT136-600,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BT136-600D,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1034 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.29 грн |
12+ | 35.62 грн |
25+ | 30.00 грн |
50+ | 26.20 грн |
52+ | 17.97 грн |
143+ | 17.02 грн |
BT136-600E,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1715 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.22 грн |
10+ | 51.52 грн |
25+ | 42.90 грн |
50+ | 33.00 грн |
55+ | 17.02 грн |
151+ | 16.07 грн |
BT136-600E/L01,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BT136-800E,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1045 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.40 грн |
11+ | 38.62 грн |
25+ | 33.72 грн |
56+ | 16.78 грн |
153+ | 15.83 грн |
BT136B-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: tube
на замовлення 772 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.26 грн |
51+ | 18.52 грн |
139+ | 17.49 грн |
BT136B-800E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 557 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.26 грн |
11+ | 38.62 грн |
49+ | 19.23 грн |
134+ | 18.12 грн |
BT136S-600,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
BT136S-600D,118 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3045 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.93 грн |
10+ | 41.00 грн |
48+ | 19.63 грн |
131+ | 18.52 грн |
2500+ | 17.81 грн |
BT136S-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1449 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.34 грн |
10+ | 40.36 грн |
45+ | 20.74 грн |
124+ | 19.55 грн |
1000+ | 18.84 грн |
BT136S-600F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
BT136S-800,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 35/75mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 35/75mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 35/75mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 35/75mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 533 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.73 грн |
11+ | 36.41 грн |
16+ | 25.33 грн |
30+ | 20.82 грн |
46+ | 20.58 грн |
100+ | 18.68 грн |
BT136S-800DJ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 161 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 28.13 грн |
25+ | 23.98 грн |
51+ | 18.52 грн |
139+ | 17.49 грн |
BT136S-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 2340 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 70.75 грн |
10+ | 41.47 грн |
49+ | 19.39 грн |
133+ | 18.28 грн |
1000+ | 18.20 грн |
BT136S-800F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
BT136X-600,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 573 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 69.89 грн |
11+ | 36.72 грн |
50+ | 29.28 грн |
56+ | 16.86 грн |
152+ | 15.99 грн |
BT136X-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
WNSC16650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
NXPSC166506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 96A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 96A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
NXPSC16650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 96A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 96A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
WNSC2D16650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
BT151S-500L,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 5mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 5mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 1457 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 53.70 грн |
41+ | 22.72 грн |
113+ | 21.45 грн |
500+ | 21.13 грн |
BTA208X-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 727 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.37 грн |
10+ | 47.33 грн |
36+ | 26.12 грн |
98+ | 24.69 грн |
BTA212-600B/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 844 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 84.38 грн |
10+ | 53.66 грн |
23+ | 40.44 грн |
64+ | 38.23 грн |
500+ | 36.72 грн |
BTA212-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BTA212-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 963 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.73 грн |
10+ | 39.81 грн |
12+ | 35.30 грн |
30+ | 34.27 грн |
BTA212-600F,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BTA312-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 895 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.73 грн |
12+ | 33.24 грн |
14+ | 29.76 грн |
30+ | 26.28 грн |
100+ | 25.72 грн |
BTA312-600B/DG,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 110A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 110A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BTA312-600C,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BTA312-600CT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 476 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 69.04 грн |
10+ | 52.71 грн |
31+ | 30.47 грн |
84+ | 28.73 грн |
BYV32E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.72V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.72V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
товару немає в наявності
В кошику
од. на суму грн.
PHD13003C,126 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 8...25
Collector-emitter voltage: 700V
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 8...25
Collector-emitter voltage: 700V
Kind of package: Ammo Pack
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
PHE13003A,412 |
![]() |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1A
Power dissipation: 2.1W
Current gain: 5...30
Collector-emitter voltage: 400V
Kind of package: bulk
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1A
Power dissipation: 2.1W
Current gain: 5...30
Collector-emitter voltage: 400V
Kind of package: bulk
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
PHE13003C,126 |
![]() |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 5...25
Collector-emitter voltage: 400V
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 5...25
Collector-emitter voltage: 400V
Kind of package: Ammo Pack
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.