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WNSC2D08650DJ WNSC2D08650DJ WeEn Semiconductors WNSC2D08650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 8A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D08650TJ WeEn Semiconductors WNSC2D08650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 8A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D101200WQ WNSC2D101200WQ WeEn Semiconductors WNSC2D101200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.88V
Load current: 10A
Max. forward impulse current: 72A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D10650DJ WNSC2D10650DJ WeEn Semiconductors WNSC2D10650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D10650TJ WeEn Semiconductors WNSC2D10650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D10650XQ WNSC2D10650XQ WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D20650CJQ WNSC2D20650CJQ WeEn Semiconductors WNSC2D20650CJ%20%281%29.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Technology: SiC
Case: SOT1293; TO3PF
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC2D20650CWQ WNSC2D20650CWQ WeEn Semiconductors WNSC2D20650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC2D301200CWQ WNSC2D301200CWQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F23D058A0620CE&compId=WNSC2D301200CW.pdf?ci_sign=60e58728b3791b0f8fc43bb4670ecb8993344dad Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 102A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC2D401200W6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA39B8D85280D5&compId=WNSC2D401200W6Q.pdf?ci_sign=8081a5ecb81f1ad6c47aada494bd11c7a50a8e9a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.5V
Load current: 40A
Max. load current: 80A
Max. forward impulse current: 350A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2M12120R6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E39C7AF513A0D6&compId=WNSC2M12120R6Q.pdf?ci_sign=845f1a76f209c64f355944d83896c978865cbdd3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 152.8A; Idm: 430A; 1071W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 152.8A
Pulsed drain current: 430A
Power dissipation: 1071W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 19.1mΩ
Mounting: THT
Gate charge: 321nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M1K0170WQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D055A3D5E3A0D4&compId=WNSC2M1K0170WQ.pdf?ci_sign=d1d8e4445852bceaf5de17a3a44faf4d953af0dd Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
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WNSC2M20120B76J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3CB6481A200D6&compId=WNSC2M20120B76J.pdf?ci_sign=7ea4931c87d847bdf0dca7a50c82cac3c19fc0df Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 109.2A
Pulsed drain current: 300A
Power dissipation: 789W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BYV42E-200,127 BYV42E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AC1AD6BEB3D3&compId=BYV42E_SERIES.pdf?ci_sign=25d73585ef229cf655605349d37e560fd442a3c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
Max. load current: 30A
Max. forward voltage: 1V
Load current: 15A x2
Max. forward impulse current: 150A
Max. off-state voltage: 200V
Semiconductor structure: common cathode; double
на замовлення 907 шт:
термін постачання 21-30 дні (днів)
6+81.75 грн
8+57.14 грн
50+48.98 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
WNSC5D20650W6Q WeEn Semiconductors WNSC5D20650W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 40A
Max. forward impulse current: 100A
Kind of package: tube
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BYC8X-600P,127 BYC8X-600P,127 WeEn Semiconductors byc8x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
на замовлення 752 шт:
термін постачання 21-30 дні (днів)
8+61.53 грн
10+45.55 грн
25+40.41 грн
50+36.57 грн
100+32.98 грн
250+28.65 грн
500+25.63 грн
Мінімальне замовлення: 8
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WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5F3408E36E0C7&compId=WNS20H100CB.pdf?ci_sign=665aea423c8dfc437efe54b5579a3393ca7539b8 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
на замовлення 479 шт:
термін постачання 21-30 дні (днів)
7+68.57 грн
10+46.20 грн
100+31.26 грн
Мінімальне замовлення: 7
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BYC30MW-650PT2Q WeEn Semiconductors BYC30MW-650PT2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 1.8V
Max. load current: 60A
Reverse recovery time: 20ns
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BTA2008-800E,412 BTA2008-800E,412 WeEn Semiconductors PHGLS25737-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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BTA2008-1000DNML WeEn Semiconductors bta2008-1000dn.pdf Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
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BTA2008-800D,412 WeEn Semiconductors PHGLS25736-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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NXPSC04650Q NXPSC04650Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2961E4B34E259&compId=NXPSC04650.pdf?ci_sign=e9c051ee7b322030c5a68ad03dcf007e06e5002b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Semiconductor structure: single diode
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Load current: 4A
Max. forward voltage: 1.5V
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Case: TO220AC
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
6+79.12 грн
7+66.12 грн
25+62.04 грн
Мінімальне замовлення: 6
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BT138B-600F,118 BT138B-600F,118 WeEn Semiconductors bt138b-600f.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BT138B-600G,118 BT138B-600G,118 WeEn Semiconductors bt138b-600g.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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WMSC008H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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BTA216X-600E,127 BTA216X-600E,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600B,118 BTA216B-600B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Case: D2PAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
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MCR100W-10MF WeEn Semiconductors MCR100W-10M.pdf Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
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BT168E,112 BT168E,112 WeEn Semiconductors bt168e.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 500V
Kind of package: bulk
Type of thyristor: thyristor
Turn-on time: 2µs
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WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors WNS30H100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.67V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 330A
на замовлення 170 шт:
термін постачання 21-30 дні (днів)
5+101.97 грн
10+60.24 грн
100+40.08 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
WMSC010H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
On-state resistance: 10mΩ
Technology: SiC
Electrical mounting: Press-in PCB
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
Power dissipation: 152W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 210A
Topology: MOSFET half-bridge; NTC thermistor
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BYV29X-500,127 BYV29X-500,127 WeEn Semiconductors byv29x-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
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BYV29-400,127 BYV29-400,127 WeEn Semiconductors BYV29-400.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.4mm
Features of semiconductor devices: ultrafast switching
на замовлення 399 шт:
термін постачання 21-30 дні (днів)
8+55.38 грн
11+39.18 грн
13+32.81 грн
25+26.61 грн
50+26.53 грн
Мінімальне замовлення: 8
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ESDALD24BCX ESDALD24BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Breakdown voltage: 26V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Application: universal
Manufacturer series: LD
Version: ESD
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WNSC2M30120R6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3D6BD154DE0D6&compId=WNSC2M30120R6Q.pdf?ci_sign=5259bee2a318e1727c3d051d366c1673db4f9ed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NXPSC20650W6Q NXPSC20650W6Q WeEn Semiconductors nxpsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
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NXPLQSC20650W6Q NXPLQSC20650W6Q WeEn Semiconductors nxplqsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. load current: 20A
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
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BYC30X-600P,127 BYC30X-600P,127 WeEn Semiconductors byc30x-600p.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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BYC30W-600PQ BYC30W-600PQ WeEn Semiconductors byc30w-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
на замовлення 480 шт:
термін постачання 21-30 дні (днів)
4+113.40 грн
30+60.40 грн
Мінімальне замовлення: 4
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BYC30WT-600PQ BYC30WT-600PQ WeEn Semiconductors BYC30WT-600P.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
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BYC30MX-650PQ WeEn Semiconductors BYC30MX-650PQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30-1200PQ BYC30-1200PQ WeEn Semiconductors byc30-1200p.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
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BYC30-600P,127 BYC30-600P,127 WeEn Semiconductors byc30-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
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BYC30B-600PJ BYC30B-600PJ WeEn Semiconductors BYC30B-600P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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BYC30DW-600PQ BYC30DW-600PQ WeEn Semiconductors byc30dw-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
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BYC30MB-650PJ WeEn Semiconductors BYC30MB-650P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 30A; 20ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 270A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30W-1200PQ BYC30W-1200PQ WeEn Semiconductors BYC30W-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
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BYC30W-600PT2Q WeEn Semiconductors BYC30W-600PT2Q.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
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BYC30Y-600PQ BYC30Y-600PQ WeEn Semiconductors BYC30Y-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
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BYC30Y-600PSQ WeEn Semiconductors BYC30Y-600PS.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: SOD59; TO220AC
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 45ns
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BUJ302AD,118 BUJ302AD,118 WeEn Semiconductors buj302ad.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 80W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 25...50
на замовлення 394 шт:
термін постачання 21-30 дні (днів)
8+61.53 грн
10+45.22 грн
25+39.75 грн
100+31.83 грн
Мінімальне замовлення: 8
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SMCJ58AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 616 шт:
термін постачання 21-30 дні (днів)
7+65.05 грн
8+53.87 грн
25+48.16 грн
100+44.08 грн
Мінімальне замовлення: 7
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BTA216B-800B,118 BTA216B-800B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 594 шт:
термін постачання 21-30 дні (днів)
5+105.49 грн
10+73.95 грн
100+46.36 грн
500+37.79 грн
Мінімальне замовлення: 5
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BTA216B-600E,118 BTA216B-600E,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-800B/L02Q WeEn Semiconductors BTA216X_500B%26600B%26800B.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600D,127 BTA216-600D,127 WeEn Semiconductors bta216-600d.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600F,127 BTA216-600F,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E3601BDDFD6259&compId=BTA216-600F.pdf?ci_sign=9783fb5cacc54a09a562769daf7900098e0b97c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600F,118 BTA216B-600F,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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WNSC2D08650DJ WNSC2D08650D.pdf
WNSC2D08650DJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 8A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D08650TJ WNSC2D08650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 8A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D101200WQ WNSC2D101200W.pdf
WNSC2D101200WQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.88V
Load current: 10A
Max. forward impulse current: 72A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D10650DJ WNSC2D10650D.pdf
WNSC2D10650DJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D10650TJ WNSC2D10650T.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D10650XQ
WNSC2D10650XQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D20650CJQ WNSC2D20650CJ%20%281%29.pdf
WNSC2D20650CJQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Technology: SiC
Case: SOT1293; TO3PF
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC2D20650CWQ WNSC2D20650CW.pdf
WNSC2D20650CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC2D301200CWQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F23D058A0620CE&compId=WNSC2D301200CW.pdf?ci_sign=60e58728b3791b0f8fc43bb4670ecb8993344dad
WNSC2D301200CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 102A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC2D401200W6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA39B8D85280D5&compId=WNSC2D401200W6Q.pdf?ci_sign=8081a5ecb81f1ad6c47aada494bd11c7a50a8e9a
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.5V
Load current: 40A
Max. load current: 80A
Max. forward impulse current: 350A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2M12120R6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E39C7AF513A0D6&compId=WNSC2M12120R6Q.pdf?ci_sign=845f1a76f209c64f355944d83896c978865cbdd3
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 152.8A; Idm: 430A; 1071W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 152.8A
Pulsed drain current: 430A
Power dissipation: 1071W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 19.1mΩ
Mounting: THT
Gate charge: 321nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M1K0170WQ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D055A3D5E3A0D4&compId=WNSC2M1K0170WQ.pdf?ci_sign=d1d8e4445852bceaf5de17a3a44faf4d953af0dd
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
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WNSC2M20120B76J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3CB6481A200D6&compId=WNSC2M20120B76J.pdf?ci_sign=7ea4931c87d847bdf0dca7a50c82cac3c19fc0df
Виробник: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 109.2A
Pulsed drain current: 300A
Power dissipation: 789W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BYV42E-200,127 pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AC1AD6BEB3D3&compId=BYV42E_SERIES.pdf?ci_sign=25d73585ef229cf655605349d37e560fd442a3c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV42E-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
Max. load current: 30A
Max. forward voltage: 1V
Load current: 15A x2
Max. forward impulse current: 150A
Max. off-state voltage: 200V
Semiconductor structure: common cathode; double
на замовлення 907 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+81.75 грн
8+57.14 грн
50+48.98 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
WNSC5D20650W6Q WNSC5D20650W6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 40A
Max. forward impulse current: 100A
Kind of package: tube
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BYC8X-600P,127 byc8x-600p.pdf
BYC8X-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
на замовлення 752 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+61.53 грн
10+45.55 грн
25+40.41 грн
50+36.57 грн
100+32.98 грн
250+28.65 грн
500+25.63 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
WNS20H100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5F3408E36E0C7&compId=WNS20H100CB.pdf?ci_sign=665aea423c8dfc437efe54b5579a3393ca7539b8
WNS20H100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
на замовлення 479 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+68.57 грн
10+46.20 грн
100+31.26 грн
Мінімальне замовлення: 7
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BYC30MW-650PT2Q BYC30MW-650PT2.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 1.8V
Max. load current: 60A
Reverse recovery time: 20ns
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BTA2008-800E,412 PHGLS25737-1.pdf?t.download=true&u=5oefqw
BTA2008-800E,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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BTA2008-1000DNML bta2008-1000dn.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
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BTA2008-800D,412 PHGLS25736-1.pdf?t.download=true&u=5oefqw
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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NXPSC04650Q pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2961E4B34E259&compId=NXPSC04650.pdf?ci_sign=e9c051ee7b322030c5a68ad03dcf007e06e5002b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
NXPSC04650Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Semiconductor structure: single diode
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Load current: 4A
Max. forward voltage: 1.5V
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Case: TO220AC
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+79.12 грн
7+66.12 грн
25+62.04 грн
Мінімальне замовлення: 6
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BT138B-600F,118 bt138b-600f.pdf
BT138B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BT138B-600G,118 bt138b-600g.pdf
BT138B-600G,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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WMSC008H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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BTA216X-600E,127 bta216x-600e.pdf
BTA216X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600B,118 bta216b-800b.pdf
BTA216B-600B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Case: D2PAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
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MCR100W-10MF MCR100W-10M.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
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BT168E,112 bt168e.pdf
BT168E,112
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 500V
Kind of package: bulk
Type of thyristor: thyristor
Turn-on time: 2µs
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WNS30H100CBJ WNS30H100CB.pdf
WNS30H100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.67V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 330A
на замовлення 170 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+101.97 грн
10+60.24 грн
100+40.08 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
WMSC010H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
On-state resistance: 10mΩ
Technology: SiC
Electrical mounting: Press-in PCB
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
Power dissipation: 152W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 210A
Topology: MOSFET half-bridge; NTC thermistor
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BYV29X-500,127 byv29x-500.pdf
BYV29X-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
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BYV29-400,127 BYV29-400.pdf _ween_psg2020.pdf
BYV29-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.4mm
Features of semiconductor devices: ultrafast switching
на замовлення 399 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+55.38 грн
11+39.18 грн
13+32.81 грн
25+26.61 грн
50+26.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ESDALD24BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD24BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Breakdown voltage: 26V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Application: universal
Manufacturer series: LD
Version: ESD
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WNSC2M30120R6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3D6BD154DE0D6&compId=WNSC2M30120R6Q.pdf?ci_sign=5259bee2a318e1727c3d051d366c1673db4f9ed7
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NXPSC20650W6Q nxpsc20650w.pdf
NXPSC20650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
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NXPLQSC20650W6Q nxplqsc20650w.pdf
NXPLQSC20650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. load current: 20A
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
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BYC30X-600P,127 byc30x-600p.pdf _ween_psg2020.pdf
BYC30X-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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BYC30W-600PQ byc30w-600p.pdf
BYC30W-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
на замовлення 480 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+113.40 грн
30+60.40 грн
Мінімальне замовлення: 4
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BYC30WT-600PQ BYC30WT-600P.pdf _ween_psg2020.pdf
BYC30WT-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
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BYC30MX-650PQ BYC30MX-650PQ.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30-1200PQ byc30-1200p.pdf _ween_psg2020.pdf
BYC30-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
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BYC30-600P,127 byc30-600p.pdf
BYC30-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
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BYC30B-600PJ BYC30B-600P.pdf
BYC30B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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BYC30DW-600PQ byc30dw-600p.pdf
BYC30DW-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
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BYC30MB-650PJ BYC30MB-650P.pdf
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 30A; 20ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 270A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30W-1200PQ BYC30W-1200P.pdf
BYC30W-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
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BYC30W-600PT2Q BYC30W-600PT2Q.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
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BYC30Y-600PQ BYC30Y-600P.pdf
BYC30Y-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
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BYC30Y-600PSQ BYC30Y-600PS.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: SOD59; TO220AC
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 45ns
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BUJ302AD,118 buj302ad.pdf
BUJ302AD,118
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 80W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 25...50
на замовлення 394 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+61.53 грн
10+45.22 грн
25+39.75 грн
100+31.83 грн
Мінімальне замовлення: 8
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SMCJ58AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 616 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.05 грн
8+53.87 грн
25+48.16 грн
100+44.08 грн
Мінімальне замовлення: 7
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BTA216B-800B,118 bta216b-800b.pdf
BTA216B-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 594 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+105.49 грн
10+73.95 грн
100+46.36 грн
500+37.79 грн
Мінімальне замовлення: 5
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BTA216B-600E,118 bta216b-600e.pdf
BTA216B-600E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-800B/L02Q BTA216X_500B%26600B%26800B.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600D,127 bta216-600d.pdf
BTA216-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216-600F,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E3601BDDFD6259&compId=BTA216-600F.pdf?ci_sign=9783fb5cacc54a09a562769daf7900098e0b97c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA216-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600F,118 bta216b-600e.pdf
BTA216B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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