Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5774) > Сторінка 97 з 97
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BTA425X-800BT/L02Q | WeEn Semiconductors |
 Category: TriacsDescription: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220FP Gate current: 50mA Max. forward impulse current: 275A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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BTA425Y-800CTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 35mA Max. forward impulse current: 250A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| WMSC010H12B1P6T | WeEn Semiconductors |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 107A Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 210A Power dissipation: 152W Technology: SiC Gate-source voltage: -4...18V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SOD20AX | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 20V Breakdown voltage: 22.41...24.28V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| P4SOD33CAX | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SOD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| P4SOD36AX | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SOD |
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В кошику од. на суму грн. | |||||||||
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P4SOD58AX | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SOD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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BTA312B-800B,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Technology: 3Q; Hi-Com Type of thyristor: triac Gate current: 50mA Max. load current: 12A Max. off-state voltage: 0.8kV Max. forward impulse current: 100A Case: D2PAK Mounting: SMD Features of semiconductor devices: sensitive gate Kind of package: reel; tape |
на замовлення 754 шт: термін постачання 21-30 дні (днів) |
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BTA312B-800C,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Technology: 3Q; Hi-Com Type of thyristor: triac Gate current: 35mA Max. load current: 12A Max. off-state voltage: 0.8kV Max. forward impulse current: 100A Case: D2PAK Mounting: SMD Features of semiconductor devices: sensitive gate Kind of package: reel; tape |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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BTA312B-600CT,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Technology: 3Q; Hi-Com Type of thyristor: triac Gate current: 35mA Max. load current: 12A Max. off-state voltage: 0.6kV Max. forward impulse current: 100A Case: D2PAK Mounting: SMD Features of semiconductor devices: high temperature; sensitive gate Kind of package: reel; tape |
на замовлення 478 шт: термін постачання 21-30 дні (днів) |
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BTA312B-600C,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Technology: 3Q; Hi-Com Type of thyristor: triac Gate current: 35mA Max. load current: 12A Max. off-state voltage: 0.6kV Max. forward impulse current: 100A Case: D2PAK Mounting: SMD Features of semiconductor devices: sensitive gate Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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BTA312B-600E,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Technology: 3Q; Hi-Com Type of thyristor: triac Gate current: 10mA Max. load current: 12A Max. off-state voltage: 0.6kV Max. forward impulse current: 100A Case: D2PAK Mounting: SMD Features of semiconductor devices: sensitive gate Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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BTA312B-600D,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com Technology: 3Q; Hi-Com Type of thyristor: triac Gate current: 5mA Max. load current: 12A Max. off-state voltage: 0.6kV Max. forward impulse current: 100A Case: D2PAK Mounting: SMD Features of semiconductor devices: sensitive gate Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| WMSC030H12B1P6T | WeEn Semiconductors |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 53A Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 30mΩ Pulsed drain current: 100A Power dissipation: 111W Technology: SiC Gate-source voltage: -4...18V Mechanical mounting: screw |
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В кошику од. на суму грн. |
| BTA425X-800BT/L02Q |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 275A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 275A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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В кошику
од. на суму грн.
| BTA425Y-800CTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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од. на суму грн.
| WMSC010H12B1P6T |
|
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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| SOD20AX |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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од. на суму грн.
| P4SOD33CAX |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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| P4SOD36AX |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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| P4SOD58AX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
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| BTA312B-800B,118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 50mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 50mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
на замовлення 754 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.06 грн |
| 9+ | 51.03 грн |
| 25+ | 45.11 грн |
| 100+ | 41.52 грн |
| BTA312B-800C,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
на замовлення 795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.46 грн |
| 10+ | 62.62 грн |
| 100+ | 46.44 грн |
| 500+ | 39.69 грн |
| BTA312B-600CT,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: reel; tape
на замовлення 478 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.52 грн |
| 10+ | 70.37 грн |
| 100+ | 47.86 грн |
| 250+ | 43.02 грн |
| BTA312B-600C,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
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| BTA312B-600E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 10mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 10mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
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| BTA312B-600D,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 5mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 5mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
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| WMSC030H12B1P6T |
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Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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В кошику
од. на суму грн.