Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5951) > Сторінка 97 з 100
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| SMDJ48CAJ | WeEn Semiconductors |
 Category: Bidirectional SMD transil diodesDescription: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 48V Breakdown voltage: 53.7...58.5V Max. forward impulse current: 38.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ51CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 51V Breakdown voltage: 57.1...62.3V Max. forward impulse current: 36.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ58CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.9...70.7V Max. forward impulse current: 32.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| SMDJ64CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 64V Breakdown voltage: 71.6...78V Max. forward impulse current: 29.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| ESDHD03UFX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1 Mounting: SMD Case: DFN1006-2 Manufacturer series: HD Number of channels: 1 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Max. forward impulse current: 24A Breakdown voltage: 4...8V Leakage current: 1µA Semiconductor structure: unidirectional Max. off-state voltage: 3.3V |
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| ESDHD05UFX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape Type of diode: TVS Peak pulse power dissipation: 320W Max. off-state voltage: 5V Breakdown voltage: 6...9.5V Max. forward impulse current: 20A Semiconductor structure: unidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Manufacturer series: HD |
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| ESDUD05BFX | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 88W; 6V; 4A; bidirectional; DFN1006-2; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 88W Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Manufacturer series: UD |
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| P6SMAL36AX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.4A Semiconductor structure: unidirectional Case: SMA flat Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMAL |
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| P6SMAL75AX | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: SMA flat Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMAL |
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BYC20-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; SOD59,TO220AC Mounting: THT Max. off-state voltage: 0.6kV Max. forward voltage: 2.34V Load current: 20A Semiconductor structure: single diode Reverse recovery time: 40ns Max. forward impulse current: 274A Kind of package: tube Type of diode: rectifying Case: SOD59; TO220AC |
на замовлення 841 шт: термін постачання 21-30 дні (днів) |
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BYC20D-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC Mounting: THT Max. off-state voltage: 0.6kV Max. forward voltage: 1.97V Load current: 20A Semiconductor structure: single diode Reverse recovery time: 20ns Max. forward impulse current: 275A Kind of package: tube Type of diode: rectifying Case: SOD59; TO220AC |
на замовлення 846 шт: термін постачання 21-30 дні (днів) |
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BYC20X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; Ufmax: 2.05V Mounting: THT Max. off-state voltage: 0.6kV Max. forward voltage: 2.05V Load current: 20A Semiconductor structure: single diode Reverse recovery time: 40ns Max. forward impulse current: 274A Kind of package: tube Type of diode: rectifying Case: SOD113; TO220FP-2 |
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BYC20X-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 270A; Ufmax: 1.6V; 35ns Mounting: THT Max. off-state voltage: 0.6kV Max. load current: 40A Max. forward voltage: 1.6V Load current: 20A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 270A Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: SOD113; TO220FP-2 |
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BYQ28ED-200,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 5A x2 Max. load current: 10A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: DPAK Max. forward voltage: 1.25V Max. forward impulse current: 55A Kind of package: reel; tape |
на замовлення 2421 шт: термін постачання 21-30 дні (днів) |
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WNSC021200Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Max. load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 26A Max. forward voltage: 1.4V |
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BT158W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT Max. off-state voltage: 1.2kV Load current: 80A Max. forward impulse current: 1.1kA Case: SOT429; TO247-3 Gate current: 70mA Kind of package: tube Max. load current: 126A Turn-on time: 2µs Type of thyristor: thyristor Mounting: THT |
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BYQ28E-200,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. off-state voltage: 200V Max. load current: 10A Max. forward voltage: 0.8V Load current: 5A x2 Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 55A |
на замовлення 154 шт: термін постачання 21-30 дні (днів) |
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BT258S-800LT,118 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us Case: DPAK Mounting: SMD Max. off-state voltage: 0.8kV Turn-on time: 2µs Load current: 5A Max. load current: 8A Kind of package: reel; tape Type of thyristor: thyristor Max. forward impulse current: 75A Gate current: 50µA |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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BUJ105A,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Collector-emitter voltage: 400V Current gain: 13...36 Collector current: 8A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar |
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| BUJ105AB,118 | WeEn Semiconductors |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Collector-emitter voltage: 400V Current gain: 13...36 Collector current: 8A Type of transistor: NPN Power dissipation: 125W Polarisation: bipolar |
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| BUJ105AD,118 | WeEn Semiconductors |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Collector-emitter voltage: 400V Current gain: 13...36 Collector current: 8A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar |
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BYC10-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Max. load current: 20A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOD59; TO220AC Max. forward voltage: 2V Reverse recovery time: 18ns |
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BYC100W-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 100A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 0.9kA Case: TO247-2 Max. forward voltage: 2.2V Reverse recovery time: 115ns |
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BYC10D-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 65A Case: SOD59; TO220AC Max. forward voltage: 1.4V Reverse recovery time: 18ns |
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BYC10DX-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 65A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 18ns |
на замовлення 661 шт: термін постачання 21-30 дні (днів) |
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BYC10X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 91A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 19ns |
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| BT153B-1200T-AJ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 47A Load current: 30A Gate current: 50mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 350A Turn-on time: 2µs Application: automotive industry |
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BT155W-1200T-AQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 3mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs Application: automotive industry |
на замовлення 281 шт: термін постачання 21-30 дні (днів) |
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| BUJ303AD,118 | WeEn Semiconductors |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 500V; 5A; 80W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 5A Power dissipation: 80W Case: DPAK Current gain: 14...35 Mounting: SMD Kind of package: reel; tape |
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| BUJ303CD,118 | WeEn Semiconductors |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 5A; 80W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 5A Power dissipation: 80W Case: DPAK Current gain: 28...57 Mounting: SMD Kind of package: reel; tape |
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| BUJD105AD,118 | WeEn Semiconductors |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 400V Current gain: 13...36 Collector current: 8A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar |
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| ACTT12B-800CTNJ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; D2PAK; THT Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 35mA Mounting: THT Kind of package: reel; tape |
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WNS20S100CBJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 120A Max. forward voltage: 0.8V |
на замовлення 236 шт: термін постачання 21-30 дні (днів) |
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WNS20S100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 120A Max. forward voltage: 0.8V |
на замовлення 465 шт: термін постачання 21-30 дні (днів) |
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WNS20S100CXQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 120A Max. forward voltage: 0.95V |
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OT407,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Mounting: THT Features of semiconductor devices: sensitive gate Gate current: 5/7mA Technology: 4Q Case: TO92 Max. load current: 1A Type of thyristor: triac Max. forward impulse current: 12.5A Max. off-state voltage: 0.8kV Kind of package: reel; tape |
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| BTA45-800BQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q Max. off-state voltage: 0.8kV Max. load current: 45A Gate current: 50mA Max. forward impulse current: 495A Kind of package: tube Features of semiconductor devices: high temperature Technology: 4Q Type of thyristor: triac Mounting: THT Case: SOT1292; TO3P |
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| TYN40Y-800TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 40A Load current: 25A Gate current: 15mA Case: SOT78D Mounting: THT Kind of package: tube Max. forward impulse current: 495A Turn-on time: 2µs |
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BT236X-800G,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q Technology: 4Q Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Gate current: 50/100mA Type of thyristor: triac Max. forward impulse current: 65A Max. load current: 6A |
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| ACTT16-800CTNQ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; TO220AB; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube |
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| ACTT16B-800CTNJ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; D2PAK; THT Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 35mA Mounting: THT Kind of package: reel; tape |
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EC103D1,116 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 3µA Case: TO92 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 8A Turn-on time: 2µs |
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EC103D1,412 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 3µA Case: TO92 Mounting: THT Kind of package: bulk Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 1672 шт: термін постачання 21-30 дні (днів) |
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| EC103D1WF | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 12uA; SOT223; SMD; Ifsm: 9A Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 12µA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 9A Turn-on time: 2µs |
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EC103D1WX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 12µA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 281 шт: термін постачання 21-30 дні (днів) |
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BUJ106A,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB Mounting: THT Kind of package: tube Polarisation: bipolar Case: TO220AB Collector-emitter voltage: 400V Current gain: 14...33 Collector current: 10A Type of transistor: NPN Power dissipation: 80W |
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WNSC2D301200CWQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Max. load current: 30A Load current: 15A x2 Max. forward impulse current: 102A Type of diode: Schottky rectifying |
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| ACTT12-800CTQ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; TO220AB; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube |
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| BT234-800D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q Technology: 4Q Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 0.8kV Features of semiconductor devices: logic level; sensitive gate Gate current: 10mA Type of thyristor: triac Max. forward impulse current: 35A Max. load current: 4A |
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NXPSC126506Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 72A |
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NXPSC12650B6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 72A |
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BT258U-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A Case: IPAK Mounting: THT Max. off-state voltage: 0.6kV Turn-on time: 2µs Load current: 5A Max. load current: 8A Kind of package: tube Type of thyristor: thyristor Max. forward impulse current: 75A Gate current: 50µA |
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BT258X-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Case: TO220FP Mounting: THT Max. off-state voltage: 500V Turn-on time: 2µs Load current: 5A Max. load current: 8A Kind of package: tube Type of thyristor: thyristor Max. forward impulse current: 75A Gate current: 50µA |
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BT258X-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Case: TO220FP Mounting: THT Max. off-state voltage: 0.6kV Turn-on time: 2µs Load current: 5A Max. load current: 8A Kind of package: tube Type of thyristor: thyristor Max. forward impulse current: 75A Gate current: 50µA |
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BYT28-500,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 500V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 60ns Max. forward impulse current: 55A Max. load current: 10A Max. off-state voltage: 500V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. forward voltage: 1.4V Mounting: THT Load current: 5A x2 |
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BYV30JT-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 170A; SOT1293,TO3PF Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOT1293; TO3PF Kind of package: tube Max. forward impulse current: 170A Max. forward voltage: 0.96V |
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BYV415J-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: SOT1293; TO3PF Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 1.1V |
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BYV430J-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Max. load current: 60A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: SOT1293; TO3PF Kind of package: tube Max. forward impulse current: 180A Max. forward voltage: 1.25V |
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BYV10-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD59; TO220AC Kind of package: tube Max. forward impulse current: 80A |
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BYV430K-300PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; SOT1259,TO3P Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 0.85V Case: SOT1259; TO3P Max. load current: 60A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 300A Load current: 30A x2 Max. off-state voltage: 300V |
товар відсутній |
| SMDJ48CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.7...58.5V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.7...58.5V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ51CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ58CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| SMDJ64CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| ESDHD03UFX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Mounting: SMD
Case: DFN1006-2
Manufacturer series: HD
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. forward impulse current: 24A
Breakdown voltage: 4...8V
Leakage current: 1µA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Mounting: SMD
Case: DFN1006-2
Manufacturer series: HD
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. forward impulse current: 24A
Breakdown voltage: 4...8V
Leakage current: 1µA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
товар відсутній
| ESDHD05UFX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 320W
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: HD
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 320W
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: HD
товар відсутній
| ESDUD05BFX |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 88W; 6V; 4A; bidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 88W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: UD
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 88W; 6V; 4A; bidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 88W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Manufacturer series: UD
товар відсутній
| P6SMAL36AX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
товар відсутній
| P6SMAL75AX |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
товар відсутній
| BYC20-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.34V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 40ns
Max. forward impulse current: 274A
Kind of package: tube
Type of diode: rectifying
Case: SOD59; TO220AC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.34V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 40ns
Max. forward impulse current: 274A
Kind of package: tube
Type of diode: rectifying
Case: SOD59; TO220AC
на замовлення 841 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.33 грн |
| 20+ | 41.14 грн |
| 25+ | 41.07 грн |
| 54+ | 38.85 грн |
| 500+ | 38.15 грн |
| BYC20D-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.97V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 275A
Kind of package: tube
Type of diode: rectifying
Case: SOD59; TO220AC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.97V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 275A
Kind of package: tube
Type of diode: rectifying
Case: SOD59; TO220AC
на замовлення 846 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.95 грн |
| 22+ | 37.46 грн |
| 60+ | 35.45 грн |
| BYC20X-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; Ufmax: 2.05V
Mounting: THT
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.05V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 40ns
Max. forward impulse current: 274A
Kind of package: tube
Type of diode: rectifying
Case: SOD113; TO220FP-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; Ufmax: 2.05V
Mounting: THT
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.05V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 40ns
Max. forward impulse current: 274A
Kind of package: tube
Type of diode: rectifying
Case: SOD113; TO220FP-2
товар відсутній
| BYC20X-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 270A; Ufmax: 1.6V; 35ns
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 40A
Max. forward voltage: 1.6V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 270A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 270A; Ufmax: 1.6V; 35ns
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 40A
Max. forward voltage: 1.6V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 270A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
товар відсутній
| BYQ28ED-200,118 |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Max. load current: 10A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward voltage: 1.25V
Max. forward impulse current: 55A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Max. load current: 10A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward voltage: 1.25V
Max. forward impulse current: 55A
Kind of package: reel; tape
на замовлення 2421 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.85 грн |
| 9+ | 40.58 грн |
| 25+ | 28.44 грн |
| 41+ | 19.84 грн |
| 111+ | 18.75 грн |
| WNSC021200Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 26A
Max. forward voltage: 1.4V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 26A
Max. forward voltage: 1.4V
товар відсутній
| BT158W-1200TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 80A
Max. forward impulse current: 1.1kA
Case: SOT429; TO247-3
Gate current: 70mA
Kind of package: tube
Max. load current: 126A
Turn-on time: 2µs
Type of thyristor: thyristor
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 80A
Max. forward impulse current: 1.1kA
Case: SOT429; TO247-3
Gate current: 70mA
Kind of package: tube
Max. load current: 126A
Turn-on time: 2µs
Type of thyristor: thyristor
Mounting: THT
товар відсутній
| BYQ28E-200,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 0.8V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 0.8V
Load current: 5A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
на замовлення 154 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.3 грн |
| 15+ | 23.72 грн |
| 25+ | 21.09 грн |
| 46+ | 17.83 грн |
| 124+ | 16.86 грн |
| BT258S-800LT,118 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: reel; tape
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: reel; tape
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.76 грн |
| BUJ105A,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
товар відсутній
| BUJ105AB,118 |
|
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 125W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 125W
Polarisation: bipolar
товар відсутній
| BUJ105AD,118 |
|
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
товар відсутній
| BYC10-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
товар відсутній
| BYC100W-1200PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.9kA
Case: TO247-2
Max. forward voltage: 2.2V
Reverse recovery time: 115ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.9kA
Case: TO247-2
Max. forward voltage: 2.2V
Reverse recovery time: 115ns
товар відсутній
| BYC10D-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
товар відсутній
| BYC10DX-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
на замовлення 661 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.3 грн |
| 11+ | 33.57 грн |
| 25+ | 29.69 грн |
| 29+ | 27.89 грн |
| 80+ | 26.36 грн |
| 500+ | 25.39 грн |
| BYC10X-600,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
товар відсутній
| BT153B-1200T-AJ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
товар відсутній
| BT155W-1200T-AQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
на замовлення 281 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.08 грн |
| 3+ | 194.92 грн |
| 6+ | 149.14 грн |
| 15+ | 140.82 грн |
| BUJ303AD,118 |
|
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 5A
Power dissipation: 80W
Case: DPAK
Current gain: 14...35
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 5A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 5A
Power dissipation: 80W
Case: DPAK
Current gain: 14...35
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| BUJ303CD,118 |
|
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 5A
Power dissipation: 80W
Case: DPAK
Current gain: 28...57
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 5A
Power dissipation: 80W
Case: DPAK
Current gain: 28...57
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| BUJD105AD,118 |
|
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
товар відсутній
| ACTT12B-800CTNJ |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; D2PAK; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: THT
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; D2PAK; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: THT
Kind of package: reel; tape
товар відсутній
| WNS20S100CBJ |
|
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Max. forward voltage: 0.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Max. forward voltage: 0.8V
на замовлення 236 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.38 грн |
| 25+ | 26.64 грн |
| 40+ | 20.49 грн |
| 108+ | 19.37 грн |
| WNS20S100CQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 120A
Max. forward voltage: 0.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 120A
Max. forward voltage: 0.8V
на замовлення 465 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.17 грн |
| 25+ | 24.28 грн |
| 42+ | 19.28 грн |
| 115+ | 18.24 грн |
| WNS20S100CXQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 120A
Max. forward voltage: 0.95V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 120A
Max. forward voltage: 0.95V
товар відсутній
| OT407,116 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Mounting: THT
Features of semiconductor devices: sensitive gate
Gate current: 5/7mA
Technology: 4Q
Case: TO92
Max. load current: 1A
Type of thyristor: triac
Max. forward impulse current: 12.5A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Mounting: THT
Features of semiconductor devices: sensitive gate
Gate current: 5/7mA
Technology: 4Q
Case: TO92
Max. load current: 1A
Type of thyristor: triac
Max. forward impulse current: 12.5A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
товар відсутній
| BTA45-800BQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
товар відсутній
| TYN40Y-800TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
товар відсутній
| BT236X-800G,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Technology: 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Gate current: 50/100mA
Type of thyristor: triac
Max. forward impulse current: 65A
Max. load current: 6A
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Technology: 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Gate current: 50/100mA
Type of thyristor: triac
Max. forward impulse current: 65A
Max. load current: 6A
товар відсутній
| ACTT16-800CTNQ |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
товар відсутній
| ACTT16B-800CTNJ |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; D2PAK; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Mounting: THT
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 16A; Igt: 35mA; D2PAK; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Mounting: THT
Kind of package: reel; tape
товар відсутній
| EC103D1,116 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
товар відсутній
| EC103D1,412 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 1672 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 10.09 грн |
| 55+ | 6.38 грн |
| 100+ | 5.69 грн |
| 176+ | 4.58 грн |
| 484+ | 4.3 грн |
| EC103D1WF |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 12uA; SOT223; SMD; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 800mA; 500mA; Igt: 12uA; SOT223; SMD; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
товар відсутній
| EC103D1WX |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 281 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 17.93 грн |
| 41+ | 8.6 грн |
| 100+ | 7.56 грн |
| 123+ | 6.52 грн |
| BUJ106A,127 |
|
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Mounting: THT
Kind of package: tube
Polarisation: bipolar
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 14...33
Collector current: 10A
Type of transistor: NPN
Power dissipation: 80W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Mounting: THT
Kind of package: tube
Polarisation: bipolar
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 14...33
Collector current: 10A
Type of transistor: NPN
Power dissipation: 80W
товар відсутній
| WNSC2D301200CWQ |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 30A
Load current: 15A x2
Max. forward impulse current: 102A
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Max. load current: 30A
Load current: 15A x2
Max. forward impulse current: 102A
Type of diode: Schottky rectifying
товар відсутній
| ACTT12-800CTQ |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
товар відсутній
| BT234-800D,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Technology: 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: logic level; sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. forward impulse current: 35A
Max. load current: 4A
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Technology: 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: logic level; sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. forward impulse current: 35A
Max. load current: 4A
товар відсутній
| NXPSC126506Q |
|
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 72A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 72A
товар відсутній
| NXPSC12650B6J |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 72A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 72A
товар відсутній
| BT258U-600R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Mounting: THT
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: tube
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Mounting: THT
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: tube
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
товар відсутній
| BT258X-500R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Mounting: THT
Max. off-state voltage: 500V
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: tube
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Mounting: THT
Max. off-state voltage: 500V
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: tube
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
товар відсутній
| BT258X-600R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Mounting: THT
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: tube
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Mounting: THT
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: tube
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
товар відсутній
| BYT28-500,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 500V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Mounting: THT
Load current: 5A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 500V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Mounting: THT
Load current: 5A x2
товар відсутній
| BYV30JT-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 170A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 170A
Max. forward voltage: 0.96V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 170A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 170A
Max. forward voltage: 0.96V
товар відсутній
| BYV415J-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
товар відсутній
| BYV430J-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.25V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; SOT1293,TO3PF
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.25V
товар відсутній
| BYV10-600PQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD59; TO220AC
Kind of package: tube
Max. forward impulse current: 80A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD59; TO220AC
Kind of package: tube
Max. forward impulse current: 80A
товар відсутній
| BYV430K-300PQ |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; SOT1259,TO3P
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.85V
Case: SOT1259; TO3P
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 300A
Load current: 30A x2
Max. off-state voltage: 300V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; SOT1259,TO3P
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.85V
Case: SOT1259; TO3P
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 300A
Load current: 30A x2
Max. off-state voltage: 300V
товар відсутній