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BT138B-600G,118 BT138B-600G,118 WeEn Semiconductors bt138b-600g.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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WMSC008H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
On-state resistance: 8mΩ
Power dissipation: 244W
Drain current: 153A
Drain-source voltage: 1.2kV
Pulsed drain current: 300A
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BTA216X-600E,127 BTA216X-600E,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600B,118 BTA216B-600B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Case: D2PAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
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BTA201-600B,112 BTA201-600B,112 WeEn Semiconductors bta201-600b.pdf BTA201-600B%2C112.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,112 BTA201-600E,112 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,126 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E/L01EP WeEn Semiconductors bta201-600e.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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MUR440J MUR440J WeEn Semiconductors MUR440.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
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BYV44-500,127 BYV44-500,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AA1C3B2553D3&compId=BYV44_SERIES.pdf?ci_sign=a7c531bba633e2dae5929f3ce3e4f1e9cc40c321 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 884 шт:
термін постачання 21-30 дні (днів)
5+84.32 грн
10+70.00 грн
19+50.12 грн
52+47.73 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MCR100W-10MF WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9ECD69F882E200D6&compId=MCR100W-10M.pdf?ci_sign=9653c51bcd73ebf8af0e1cf7ae4fcdc6800da1e6 Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
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BTA425Z-800CTQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C3F27125BEE0C7&compId=BTA425Z-800CT.pdf?ci_sign=1a20e9965f1867914335ae424f74c46cabdfb99e Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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BT168E,112 BT168E,112 WeEn Semiconductors bt168e.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Max. forward impulse current: 8A
Max. off-state voltage: 500V
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
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WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B88F4CE537300C7&compId=WNS30H100CB.pdf?ci_sign=fff43d3e7cd0a0f80aba86033199a9360fbcee18 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
на замовлення 280 шт:
термін постачання 21-30 дні (днів)
4+111.37 грн
10+65.71 грн
26+36.04 грн
72+34.13 грн
Мінімальне замовлення: 4
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BTA201-800ER,126 BTA201-800ER,126 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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BTA201-800B,112 BTA201-800B,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,412 BTA201-800ER,412 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
Technology: 3Q; Hi-Com
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
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BTA201-800E,112 BTA201-800E,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800E,116 BTA201-800E,116 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BTA201-800E,412 BTA201-800E,412 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
Technology: 3Q; Hi-Com
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
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BTA201-800ER,112 BTA201-800ER,112 WeEn Semiconductors BTA201-800ER_112.pdf bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,116 BTA201-800ER,116 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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WMSC010H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
On-state resistance: 10mΩ
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Electrical mounting: Press-in PCB
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
Power dissipation: 152W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 210A
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SMCJ40CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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BT258S-800R,118 BT258S-800R,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7B5AC5294274A&compId=BT258S-800R.pdf?ci_sign=e19771a654cdc6a4da8f99f59e3450877d83051d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 2388 шт:
термін постачання 21-30 дні (днів)
5+89.10 грн
10+52.42 грн
25+44.07 грн
53+17.90 грн
144+16.94 грн
Мінімальне замовлення: 5
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BT258S-800LT,118 BT258S-800LT,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B9839D2A0B142143&compId=bt258s-800lt.pdf?ci_sign=fd2d44a2fcd08006089f2cd197087f6795945fd4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)
5+91.67 грн
10+55.76 грн
25+47.09 грн
100+36.91 грн
500+28.64 грн
1000+26.01 грн
Мінімальне замовлення: 5
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BT258-500R,127 BT258-500R,127 WeEn Semiconductors bt258-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 0.2mA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 500V
Kind of package: tube
на замовлення 989 шт:
термін постачання 21-30 дні (днів)
7+62.54 грн
10+47.65 грн
54+17.42 грн
148+16.47 грн
Мінімальне замовлення: 7
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BT258X-500R,127 BT258X-500R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BT258U-600R,127 BT258U-600R,127 WeEn Semiconductors bt258u-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
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BT258X-600R,127 BT258X-600R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BT258X-800R,127 BT258X-800R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BYQ28E-200,127 BYQ28E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E273FBF91D8259&compId=BYQ28E-200.pdf?ci_sign=d9202b2e23d49dbf26d79aa0716ca6c8b933b1f6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
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BYQ28ED-200,118 BYQ28ED-200,118 WeEn Semiconductors byq28ed-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Mounting: SMD
Semiconductor structure: common cathode; double
Case: DPAK
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 1.25V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 55A
Max. off-state voltage: 200V
на замовлення 2107 шт:
термін постачання 21-30 дні (днів)
10+42.83 грн
12+34.52 грн
42+22.35 грн
115+21.16 грн
1000+20.36 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BYV29X-500,127 BYV29X-500,127 WeEn Semiconductors byv29x-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
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BYQ28E-200E,127 BYQ28E-200E,127 WeEn Semiconductors byq28e-200e.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.895V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
9+52.26 грн
11+38.26 грн
30+33.41 грн
48+19.81 грн
130+18.69 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYQ28E-200/H,127 BYQ28E-200/H,127 WeEn Semiconductors byq28e-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 50A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
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BTA208-600D,127 BTA208-600D,127 WeEn Semiconductors bta208-600d.pdf PHGLS30337-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYC15X-600PQ BYC15X-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E284E0C9E3C259&compId=BYC15X-600P.pdf?ci_sign=fb6841fe1c3bf10f904a7715dc99648915312bbc pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
на замовлення 1036 шт:
термін постачання 21-30 дні (днів)
7+62.54 грн
9+47.57 грн
25+37.55 грн
69+35.48 грн
250+34.76 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYC15X-600,127 BYC15X-600,127 WeEn Semiconductors byc15x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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BUJ103A,127 BUJ103A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
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BUJ103AX,127 BUJ103AX,127 WeEn Semiconductors PHGLS23441-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Polarisation: bipolar
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 26W
Collector-emitter voltage: 400V
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BUJ103AD,118 WeEn Semiconductors BUJ103AD.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
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BT136-800E.127 BT136-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F79FF6600259&compId=BT136-800E.pdf?ci_sign=90acedf68dd52741d51d6128c1995f2cefd47560 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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BYV29-400,127 BYV29-400,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E24D03E266E259&compId=BYV29-400.pdf?ci_sign=5662af63860df70897e566273e21c6543e23f157 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.4mm
Features of semiconductor devices: ultrafast switching
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NXPSC126506Q NXPSC126506Q WeEn Semiconductors en Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 72A
Kind of package: tube
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ESDALD24BCX ESDALD24BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Breakdown voltage: 26V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
Version: ESD
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BYV25FX-600,127 BYV25FX-600,127 WeEn Semiconductors byv25fx-600.pdf PHGLS22516-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV25FD-600,118 BYV25FD-600,118 WeEn Semiconductors byv25fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.7V
Max. forward impulse current: 66A
Reverse recovery time: 35ns
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BYV25D-600,118 BYV25D-600,118 WeEn Semiconductors byv25d-600.pdf BYV25D-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.11V
Max. forward impulse current: 66A
Reverse recovery time: 50ns
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BTA425X-800BT/L02Q WeEn Semiconductors bta425x-800bt.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
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BTA425X-800BQ BTA425X-800BQ WeEn Semiconductors bta425x-800b.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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BTA425Y-800BTQ BTA425Y-800BTQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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BTA425Y-800CTQ BTA425Y-800CTQ WeEn Semiconductors bta425y-800ct.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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SMBJ26AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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WNSC2M30120R6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3D6BD154DE0D6&compId=WNSC2M30120R6Q.pdf?ci_sign=5259bee2a318e1727c3d051d366c1673db4f9ed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BTA45-800BQ WeEn Semiconductors bta45-800b.pdf Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Features of semiconductor devices: high temperature
Mounting: THT
Case: SOT1292; TO3P
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Technology: 4Q
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WNSC6D16650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E622A17B1640D6&compId=WNSC6D16650B6J.pdf?ci_sign=cc40ad2ab6a084f125cb3216bf70f5d30875fc22 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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WNSC6D16650CW6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D13A01158B00D4&compId=WNSC6D16650CW6Q.pdf?ci_sign=0fc6f322840a4de8ec592b7a74dbd52f83a649cb Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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NXPSC20650W6Q NXPSC20650W6Q WeEn Semiconductors nxpsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
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NXPLQSC20650W6Q NXPLQSC20650W6Q WeEn Semiconductors nxplqsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
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BT138B-600G,118 bt138b-600g.pdf
BT138B-600G,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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WMSC008H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
On-state resistance: 8mΩ
Power dissipation: 244W
Drain current: 153A
Drain-source voltage: 1.2kV
Pulsed drain current: 300A
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BTA216X-600E,127 bta216x-600e.pdf
BTA216X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216B-600B,118 bta216b-800b.pdf
BTA216B-600B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Case: D2PAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
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BTA201-600B,112 bta201-600b.pdf BTA201-600B%2C112.pdf
BTA201-600B,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,112 bta201-600b.pdf
BTA201-600E,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,126 bta201-600b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E/L01EP bta201-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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MUR440J MUR440.pdf
MUR440J
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
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BYV44-500,127 pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AA1C3B2553D3&compId=BYV44_SERIES.pdf?ci_sign=a7c531bba633e2dae5929f3ce3e4f1e9cc40c321 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV44-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 884 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+84.32 грн
10+70.00 грн
19+50.12 грн
52+47.73 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MCR100W-10MF pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9ECD69F882E200D6&compId=MCR100W-10M.pdf?ci_sign=9653c51bcd73ebf8af0e1cf7ae4fcdc6800da1e6
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
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BTA425Z-800CTQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C3F27125BEE0C7&compId=BTA425Z-800CT.pdf?ci_sign=1a20e9965f1867914335ae424f74c46cabdfb99e
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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BT168E,112 bt168e.pdf
BT168E,112
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Max. forward impulse current: 8A
Max. off-state voltage: 500V
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
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В кошику  од. на суму  грн.
WNS30H100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B88F4CE537300C7&compId=WNS30H100CB.pdf?ci_sign=fff43d3e7cd0a0f80aba86033199a9360fbcee18
WNS30H100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
на замовлення 280 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+111.37 грн
10+65.71 грн
26+36.04 грн
72+34.13 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTA201-800ER,126 bta201-800er.pdf
BTA201-800ER,126
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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BTA201-800B,112 bta201-800e.pdf
BTA201-800B,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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В кошику  од. на суму  грн.
BTA201-800ER,412 bta201-800er.pdf
BTA201-800ER,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
Technology: 3Q; Hi-Com
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
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BTA201-800E,112 bta201-800e.pdf
BTA201-800E,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800E,116 bta201-800e.pdf
BTA201-800E,116
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BTA201-800E,412 bta201-800e.pdf
BTA201-800E,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
Technology: 3Q; Hi-Com
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
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BTA201-800ER,112 BTA201-800ER_112.pdf bta201-800er.pdf
BTA201-800ER,112
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
BTA201-800ER,116 bta201-800er.pdf
BTA201-800ER,116
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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В кошику  од. на суму  грн.
WMSC010H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
On-state resistance: 10mΩ
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Electrical mounting: Press-in PCB
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
Power dissipation: 152W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 210A
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SMCJ40CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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BT258S-800R,118 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7B5AC5294274A&compId=BT258S-800R.pdf?ci_sign=e19771a654cdc6a4da8f99f59e3450877d83051d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT258S-800R,118
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 2388 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+89.10 грн
10+52.42 грн
25+44.07 грн
53+17.90 грн
144+16.94 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BT258S-800LT,118 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B9839D2A0B142143&compId=bt258s-800lt.pdf?ci_sign=fd2d44a2fcd08006089f2cd197087f6795945fd4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT258S-800LT,118
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+91.67 грн
10+55.76 грн
25+47.09 грн
100+36.91 грн
500+28.64 грн
1000+26.01 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BT258-500R,127 bt258-500r.pdf
BT258-500R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 0.2mA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 500V
Kind of package: tube
на замовлення 989 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+62.54 грн
10+47.65 грн
54+17.42 грн
148+16.47 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BT258X-500R,127 bt258x-500r.pdf
BT258X-500R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BT258U-600R,127 bt258u-600r.pdf
BT258U-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
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BT258X-600R,127 bt258x-500r.pdf
BT258X-600R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BT258X-800R,127 bt258x-500r.pdf
BT258X-800R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
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BYQ28E-200,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E273FBF91D8259&compId=BYQ28E-200.pdf?ci_sign=d9202b2e23d49dbf26d79aa0716ca6c8b933b1f6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYQ28E-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
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BYQ28ED-200,118 byq28ed-200.pdf
BYQ28ED-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Mounting: SMD
Semiconductor structure: common cathode; double
Case: DPAK
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 1.25V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 55A
Max. off-state voltage: 200V
на замовлення 2107 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.83 грн
12+34.52 грн
42+22.35 грн
115+21.16 грн
1000+20.36 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BYV29X-500,127 byv29x-500.pdf
BYV29X-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
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BYQ28E-200E,127 byq28e-200e.pdf
BYQ28E-200E,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.895V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+52.26 грн
11+38.26 грн
30+33.41 грн
48+19.81 грн
130+18.69 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BYQ28E-200/H,127 byq28e-200.pdf
BYQ28E-200/H,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 50A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
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BTA208-600D,127 bta208-600d.pdf PHGLS30337-1.pdf?t.download=true&u=5oefqw
BTA208-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYC15X-600PQ pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E284E0C9E3C259&compId=BYC15X-600P.pdf?ci_sign=fb6841fe1c3bf10f904a7715dc99648915312bbc pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC15X-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
на замовлення 1036 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+62.54 грн
9+47.57 грн
25+37.55 грн
69+35.48 грн
250+34.76 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BYC15X-600,127 byc15x-600.pdf
BYC15X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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BUJ103A,127
BUJ103A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
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BUJ103AX,127 PHGLS23441-1.pdf?t.download=true&u=5oefqw
BUJ103AX,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Polarisation: bipolar
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 26W
Collector-emitter voltage: 400V
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BUJ103AD,118 BUJ103AD.pdf
Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
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BT136-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F79FF6600259&compId=BT136-800E.pdf?ci_sign=90acedf68dd52741d51d6128c1995f2cefd47560 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT136-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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BYV29-400,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E24D03E266E259&compId=BYV29-400.pdf?ci_sign=5662af63860df70897e566273e21c6543e23f157 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV29-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.4mm
Features of semiconductor devices: ultrafast switching
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NXPSC126506Q en
NXPSC126506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 72A
Kind of package: tube
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ESDALD24BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD24BCX
Виробник: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Breakdown voltage: 26V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
Version: ESD
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BYV25FX-600,127 byv25fx-600.pdf PHGLS22516-1.pdf?t.download=true&u=5oefqw
BYV25FX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV25FD-600,118 byv25fd-600.pdf
BYV25FD-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.7V
Max. forward impulse current: 66A
Reverse recovery time: 35ns
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BYV25D-600,118 byv25d-600.pdf BYV25D-600.pdf
BYV25D-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.11V
Max. forward impulse current: 66A
Reverse recovery time: 50ns
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BTA425X-800BT/L02Q bta425x-800bt.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
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BTA425X-800BQ bta425x-800b.pdf
BTA425X-800BQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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BTA425Y-800BTQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA425Y-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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BTA425Y-800CTQ bta425y-800ct.pdf
BTA425Y-800CTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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SMBJ26AJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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WNSC2M30120R6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3D6BD154DE0D6&compId=WNSC2M30120R6Q.pdf?ci_sign=5259bee2a318e1727c3d051d366c1673db4f9ed7
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BTA45-800BQ bta45-800b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Features of semiconductor devices: high temperature
Mounting: THT
Case: SOT1292; TO3P
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Technology: 4Q
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WNSC6D16650B6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E622A17B1640D6&compId=WNSC6D16650B6J.pdf?ci_sign=cc40ad2ab6a084f125cb3216bf70f5d30875fc22
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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WNSC6D16650CW6Q pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D13A01158B00D4&compId=WNSC6D16650CW6Q.pdf?ci_sign=0fc6f322840a4de8ec592b7a74dbd52f83a649cb
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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NXPSC20650W6Q nxpsc20650w.pdf
NXPSC20650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
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NXPLQSC20650W6Q nxplqsc20650w.pdf
NXPLQSC20650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
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