Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5813) > Сторінка 95 з 97
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BT138B-600F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 25/70mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 95A Technology: 4Q |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT138B-600G,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 50/100mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 95A Technology: 4Q |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BTA208X-1000C0,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Case: TO220FP Gate current: 35mA Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: high commutation Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA208X-1000C0/L01 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Case: TO220FP Gate current: 35mA Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: high commutation Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BTA208S-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BTA208X-800B/L02Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 50mA Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA445Z-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Kind of package: tube Type of thyristor: triac Features of semiconductor devices: high temperature Technology: 3Q; Hi-Com Gate current: 50mA Max. load current: 45A Max. forward impulse current: 495A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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WNSC5D20650X6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 2.2V Max. load current: 40A Max. forward impulse current: 80A Kind of package: tube |
на замовлення 846 шт: термін постачання 21-30 дні (днів) |
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OT412,115 | WeEn Semiconductors |
Category: Triacs Description: Triac; 1A; SOT223; 4Q; sensitive gate Type of thyristor: triac Max. load current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: sensitive gate |
на замовлення 776 шт: термін постачання 21-30 дні (днів) |
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BTA208S-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 6920 шт: термін постачання 21-30 дні (днів) |
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BTA208S-800F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208X-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208-800F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208S-600D,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208X-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA208X-800F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BTA425Z-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: SOT1292; TO3P Gate current: 35mA Max. forward impulse current: 250A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ACTT4S-800E,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 4A Gate current: 10mA Case: DPAK Mounting: SMD Kind of package: reel; tape |
на замовлення 2145 шт: термін постачання 21-30 дні (днів) |
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| ACTT4S-800C,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 4A Gate current: 35mA Case: DPAK Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT136-800E.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 25A Technology: 4Q |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA425Y-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 50mA Max. forward impulse current: 250A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 978 шт: термін постачання 21-30 дні (днів) |
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BTA201-600E,112 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA201-600B,112 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 50mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BTA201-600E,126 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA201-600E/L01EP | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BTA201-800B,112 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 50mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA201-800E,112 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA201-800E,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA201-800E,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA201-800ER,112 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA201-800ER,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA201-800ER,126 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA201-800ER,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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WNSC16650CWQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.7V Max. load current: 16A Max. forward impulse current: 48A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC166506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. forward impulse current: 96A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC16650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.7V Max. forward impulse current: 96A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| WNSC12650T6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: DFN8x8N Max. forward voltage: 1.8V Max. forward impulse current: 57A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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WNSC12650WQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.7V Max. forward impulse current: 72A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC126506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. forward impulse current: 72A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC12650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.7V Max. forward impulse current: 72A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BTA416B-800BTJ | WeEn Semiconductors |
Category: Unclassified Description: BTA416B-800BTJ |
на замовлення 4800 шт: термін постачання 21-30 дні (днів) |
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| NCR100W-12LX | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape Case: SOT223 Mounting: SMD Kind of package: reel; tape Type of thyristor: thyristor Turn-on time: 2µs Gate current: 50µA Load current: 0.8A Max. load current: 1.1A Max. forward impulse current: 11A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MUR320J | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 875mV; Ifsm: 160A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 0.875V Kind of package: reel; tape Max. forward impulse current: 160A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYV29-500.127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 110A Case: SOD59; TO220AC Max. forward voltage: 0.9V Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYV29-500,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 110A Case: SOD59; TO220AC Max. forward voltage: 0.9V Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
на замовлення 1019 шт: термін постачання 21-30 дні (днів) |
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BYV79E-200.127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 14A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 160A Case: SOD59; TO220AC Max. forward voltage: 0.9V Heatsink thickness: max. 1.3mm Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYV79E-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 14A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 160A Case: SOD59; TO220AC Max. forward voltage: 0.83V Heatsink thickness: max. 1.3mm Reverse recovery time: 30ns |
на замовлення 203 шт: термін постачання 21-30 дні (днів) |
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MCR08BT1,115 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape Kind of package: reel; tape Case: SOT223 Mounting: SMD Turn-on time: 2µs Gate current: 50µA Max. load current: 0.8A Load current: 0.5A Max. forward impulse current: 8A Max. off-state voltage: 200V Type of thyristor: thyristor |
на замовлення 1721 шт: термін постачання 21-30 дні (днів) |
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| SMDJ40AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 44.8...48.8V Max. forward impulse current: 46.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMDJ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BTA225-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: TO220AB Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1056 шт: термін постачання 21-30 дні (днів) |
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BTA225B-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: D2PAK Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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BTA225-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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BTA225-600BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: TO220AB Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA225B-800BTJ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: D2PAK Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYC15-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD59; TO220AC Max. forward voltage: 1.4V Reverse recovery time: 19ns |
на замовлення 328 шт: термін постачання 21-30 дні (днів) |
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BYC15-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: SOD59; TO220AC Max. forward voltage: 2V Reverse recovery time: 18ns Max. load current: 30A |
на замовлення 776 шт: термін постачання 21-30 дні (днів) |
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BT1308W-600D,115 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate Features of semiconductor devices: sensitive gate Kind of package: reel; tape Gate current: 5/7mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.6kV Technology: 4Q Type of thyristor: triac Case: SOT223 Mounting: SMD |
на замовлення 512 шт: термін постачання 21-30 дні (днів) |
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| BT138B-600F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 95A
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 95A
Technology: 4Q
товару немає в наявності
В кошику
од. на суму грн.
| BT138B-600G,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 95A
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 95A
Technology: 4Q
товару немає в наявності
В кошику
од. на суму грн.
| BTA208X-1000C0,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA208X-1000C0/L01 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA208S-800B,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTA208X-800B/L02Q |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA445Z-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| WNSC5D20650X6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. load current: 40A
Max. forward impulse current: 80A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. load current: 40A
Max. forward impulse current: 80A
Kind of package: tube
на замовлення 846 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 166.39 грн |
| 5+ | 138.07 грн |
| 25+ | 122.45 грн |
| 100+ | 110.13 грн |
| OT412,115 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 776 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 26+ | 17.08 грн |
| 32+ | 12.99 грн |
| 100+ | 11.42 грн |
| 250+ | 11.01 грн |
| BTA208S-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 6920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.23 грн |
| 10+ | 52.60 грн |
| 25+ | 44.30 грн |
| 50+ | 38.87 грн |
| 100+ | 34.44 грн |
| 250+ | 30.00 грн |
| 500+ | 27.20 грн |
| 1000+ | 24.98 грн |
| 2500+ | 22.68 грн |
| BTA208S-800F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTA208-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA208X-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA208-600D,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA208-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA208-800F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA208S-600D,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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| BTA208X-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA208X-800F,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA425Z-800CTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: SOT1292; TO3P
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: SOT1292; TO3P
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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| ACTT4S-800E,118 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 2145 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.17 грн |
| 15+ | 29.26 грн |
| 100+ | 20.63 грн |
| 250+ | 19.72 грн |
| ACTT4S-800C,118 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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| BT136-800E.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 25A
Technology: 4Q
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 25A
Technology: 4Q
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| BTA425Y-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 978 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 123.91 грн |
| 10+ | 69.03 грн |
| 25+ | 63.28 грн |
| 50+ | 60.82 грн |
| 100+ | 57.53 грн |
| BTA201-600E,112 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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| BTA201-600B,112 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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| BTA201-600E,126 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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| BTA201-600E/L01EP |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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| BTA201-800B,112 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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| BTA201-800E,112 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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| BTA201-800E,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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| BTA201-800E,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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| BTA201-800ER,112 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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| BTA201-800ER,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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| BTA201-800ER,126 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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| BTA201-800ER,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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| WNSC16650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
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| NXPSC166506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: tube
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| NXPSC16650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
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| WNSC12650T6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward voltage: 1.8V
Max. forward impulse current: 57A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward voltage: 1.8V
Max. forward impulse current: 57A
Kind of package: reel; tape
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| WNSC12650WQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
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| NXPSC126506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
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| NXPSC12650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: reel; tape
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В кошику
од. на суму грн.
| BTA416B-800BTJ |
на замовлення 4800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1600+ | 35.05 грн |
| NCR100W-12LX |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.8A
Max. load current: 1.1A
Max. forward impulse current: 11A
Max. off-state voltage: 1kV
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.8A
Max. load current: 1.1A
Max. forward impulse current: 11A
Max. off-state voltage: 1kV
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| MUR320J |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 875mV; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
Max. forward impulse current: 160A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 875mV; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
Max. forward impulse current: 160A
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| BYV29-500.127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
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| BYV29-500,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.53 грн |
| 11+ | 40.60 грн |
| 12+ | 34.85 грн |
| 25+ | 29.01 грн |
| 50+ | 28.85 грн |
| BYV79E-200.127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
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од. на суму грн.
| BYV79E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
на замовлення 203 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.46 грн |
| 9+ | 51.28 грн |
| 10+ | 42.82 грн |
| 25+ | 34.60 грн |
| 50+ | 30.98 грн |
| MCR08BT1,115 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Turn-on time: 2µs
Gate current: 50µA
Max. load current: 0.8A
Load current: 0.5A
Max. forward impulse current: 8A
Max. off-state voltage: 200V
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Turn-on time: 2µs
Gate current: 50µA
Max. load current: 0.8A
Load current: 0.5A
Max. forward impulse current: 8A
Max. off-state voltage: 200V
Type of thyristor: thyristor
на замовлення 1721 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.55 грн |
| 20+ | 21.04 грн |
| 100+ | 13.64 грн |
| 500+ | 9.86 грн |
| 1000+ | 8.79 грн |
| SMDJ40AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
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од. на суму грн.
| BTA225-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1056 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.82 грн |
| 10+ | 70.68 грн |
| 50+ | 64.10 грн |
| 100+ | 61.64 грн |
| 250+ | 57.53 грн |
| 500+ | 55.06 грн |
| BTA225B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.23 грн |
| 10+ | 76.43 грн |
| BTA225-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.51 грн |
| 10+ | 106.02 грн |
| 50+ | 83.83 грн |
| 100+ | 75.61 грн |
| BTA225-600BT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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| BTA225B-800BTJ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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од. на суму грн.
| BYC15-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
на замовлення 328 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.56 грн |
| 11+ | 38.79 грн |
| 25+ | 34.68 грн |
| 100+ | 34.60 грн |
| BYC15-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 30A
на замовлення 776 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 62.84 грн |
| 13+ | 33.53 грн |
| 50+ | 32.05 грн |
| BT1308W-600D,115 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Mounting: SMD
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Mounting: SMD
на замовлення 512 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.98 грн |
| 19+ | 22.19 грн |
| 22+ | 18.90 грн |
| 100+ | 11.34 грн |
| 500+ | 8.30 грн |














