Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6043) > Сторінка 95 з 101
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BTA316-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 861 шт: термін постачання 14-30 дні (днів) |
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BTA316-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 5mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 657 шт: термін постачання 14-30 дні (днів) |
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BTA216X-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1109 шт: термін постачання 14-30 дні (днів) |
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BTA316-800C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 907 шт: термін постачання 14-30 дні (днів) |
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BTA316Y-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1018 шт: термін постачання 14-30 дні (днів) |
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BTA316B-800C,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 791 шт: термін постачання 14-30 дні (днів) |
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BTA316Y-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 519 шт: термін постачання 14-30 дні (днів) |
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BTA316B-600C,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 601 шт: термін постачання 14-30 дні (днів) |
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BTA316X-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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BTA216X-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 832 шт: термін постачання 14-30 дні (днів) |
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BTA316-600ET,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 157 шт: термін постачання 14-30 дні (днів) |
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BTA316-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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BTA316X-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 240 шт: термін постачання 14-30 дні (днів) |
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BTA316B-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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ACT108-800EQP | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 0.8A Case: TO92 Gate current: 10mA Mounting: THT Kind of package: reel; tape Features of semiconductor devices: internally triggered |
на замовлення 9219 шт: термін постачання 14-30 дні (днів) |
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BT148W-600R,115 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 50µA Max. forward impulse current: 10A Mounting: SMD Kind of package: reel; tape Turn-on time: 2µs Load current: 0.6A |
на замовлення 5546 шт: термін постачання 14-30 дні (днів) |
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BT139-600.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYW29ED-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 80A Case: DPAK Kind of package: reel; tape Max. forward voltage: 0.8V Reverse recovery time: 25ns |
на замовлення 689 шт: термін постачання 14-30 дні (днів) |
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BYV44-500,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: SOT78; TO220AB Kind of package: tube Max. forward voltage: 1.15V Max. load current: 30A Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ26AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 29.12...31.67V Max. forward impulse current: 14.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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ACT108-600E,126 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 10mA Case: TO92 Mounting: THT Features of semiconductor devices: internally triggered Kind of package: Ammo Pack |
на замовлення 1539 шт: термін постачання 14-30 дні (днів) |
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BTA225B-600B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: D2PAK Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 4075 шт: термін постачання 14-30 дні (днів) |
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BTA225B-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: D2PAK Gate current: 50mA Technology: 3Q; Hi-Com Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A |
на замовлення 502 шт: термін постачання 14-30 дні (днів) |
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BTA225-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 990 шт: термін постачання 14-30 дні (днів) |
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BTA203-800CTEP | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 3A; TO92; Igt: 30mA; Ifsm: 27A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 3A Case: TO92 Gate current: 30mA Max. forward impulse current: 27A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 11 шт В кошику од. на суму грн. | ||||||||||||||||||
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BTA225-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Gate current: 50mA Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Max. off-state voltage: 0.6kV Max. load current: 25A Kind of package: tube Case: TO220AB Type of thyristor: triac Mounting: THT Max. forward impulse current: 190A |
на замовлення 1031 шт: термін постачання 14-30 дні (днів) |
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BTA206X-800CT/DGQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220AB Gate current: 35mA Max. forward impulse current: 66A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
на замовлення 635 шт: термін постачання 14-30 дні (днів) |
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BT155K-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT1259; TO3P Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
на замовлення 765 шт: термін постачання 14-30 дні (днів) |
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BT155W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT Max. off-state voltage: 1.2kV Load current: 50A Case: SOT429; TO247-3 Mounting: THT Max. load current: 79A Max. forward impulse current: 0.65kA Kind of package: tube Turn-on time: 2µs Gate current: 50mA Type of thyristor: thyristor |
на замовлення 322 шт: термін постачання 14-30 дні (днів) |
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BT155Z-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT Max. off-state voltage: 1.2kV Load current: 50A Case: SOT1292; TOP3I Mounting: THT Max. load current: 79A Max. forward impulse current: 0.65kA Kind of package: tube Turn-on time: 2µs Gate current: 50mA Type of thyristor: thyristor |
на замовлення 718 шт: термін постачання 14-30 дні (днів) |
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BT155W-1200T-AQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT Max. off-state voltage: 1.2kV Load current: 50A Case: SOT429; TO247-3 Mounting: THT Max. load current: 79A Max. forward impulse current: 0.65kA Kind of package: tube Application: automotive industry Turn-on time: 2µs Gate current: 3mA Type of thyristor: thyristor |
на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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BT158W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 126A Load current: 80A Gate current: 70mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 1.1kA Turn-on time: 2µs |
на замовлення 176 шт: термін постачання 14-30 дні (днів) |
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BT150S-600R,118 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Load current: 2.5A Gate current: 15µA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 35A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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WNS30H100CBJ | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.67V Max. load current: 30A Max. forward impulse current: 330A Kind of package: reel; tape |
на замовлення 128 шт: термін постачання 14-30 дні (днів) |
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PHE13005,127 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Mounting: THT Collector-emitter voltage: 400V Power dissipation: 75W Polarisation: bipolar Type of transistor: NPN Current gain: 10...40 Kind of package: tube Case: TO220AB Collector current: 4A |
на замовлення 2434 шт: термін постачання 14-30 дні (днів) |
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BT148-400R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Mounting: THT Max. forward impulse current: 35A Gate current: 15µA Max. off-state voltage: 0.4kV Turn-on time: 2µs Load current: 2.5A Max. load current: 4A Kind of package: tube Case: SIP3; SOT82 Type of thyristor: thyristor |
на замовлення 990 шт: термін постачання 14-30 дні (днів) |
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BT148-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Mounting: THT Max. forward impulse current: 35A Gate current: 15µA Max. off-state voltage: 500V Turn-on time: 2µs Load current: 2.5A Max. load current: 4A Kind of package: tube Case: SIP3; SOT82 Type of thyristor: thyristor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC206506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC20650W-AQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2.1V Max. forward impulse current: 50A Kind of package: tube Application: automotive industry Max. load current: 20A |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | ||||||||||||||||||
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NXPSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | ||||||||||||||||||
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WNSC6D20650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.8V Max. forward impulse current: 120A Kind of package: reel; tape Max. load current: 40A |
на замовлення 784 шт: термін постачання 14-30 дні (днів) |
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NXPLQSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.85V Max. forward impulse current: 48A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | ||||||||||||||||||
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WNSC2D20650CJQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: SOT1293; TO3PF Max. forward voltage: 1.8V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
Мінімальне замовлення: 2400 шт В кошику од. на суму грн. | ||||||||||||||||||
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WNSC2D20650CWQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | ||||||||||||||||||
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WNSC6D20650WQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.4V Max. forward impulse current: 155A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||||||||||
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ACT102H-600D,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD Type of thyristor: AC switch Max. load current: 0.2A Case: SO8 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.6kV Gate current: 5mA Features of semiconductor devices: internally triggered |
на замовлення 1234 шт: термін постачання 14-30 дні (днів) |
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BT137X-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA425Z-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Kind of package: tube Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 25A Max. forward impulse current: 250A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA425Y-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 50mA Max. forward impulse current: 250A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 899 шт: термін постачання 14-30 дні (днів) |
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BTA425X-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220FP Gate current: 50mA Max. forward impulse current: 250A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 377 шт: термін постачання 14-30 дні (днів) |
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BTA420X-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO220FP Gate current: 50mA Max. forward impulse current: 200A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 303 шт: термін постачання 14-30 дні (днів) |
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BYC10-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; Ifsm: 65A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Max. forward impulse current: 65A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 1.4V Reverse recovery time: 19ns |
на замовлення 229 шт: термін постачання 14-30 дні (днів) |
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BTA420-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Gate current: 35mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA420X-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Gate current: 35mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA420-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA420X-800CT/L02Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Gate current: 35mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA420Y-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 20A Max. forward impulse current: 220A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA420Y-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Gate current: 35mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MURS360BJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A Reverse recovery time: 50ns Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.88V Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying |
на замовлення 2137 шт: термін постачання 14-30 дні (днів) |
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WSJM65R099DQ | WeEn Semiconductors |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 128A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| BTA316-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 861 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 77.66 грн |
| 10+ | 49.29 грн |
| 50+ | 42.50 грн |
| 100+ | 39.87 грн |
| 500+ | 34.19 грн |
| BTA316-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 657 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.56 грн |
| 10+ | 43.44 грн |
| 25+ | 38.18 грн |
| 100+ | 34.36 грн |
| 500+ | 32.07 грн |
| BTA216X-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.56 грн |
| 9+ | 49.55 грн |
| 25+ | 45.81 грн |
| 100+ | 41.23 грн |
| 500+ | 36.06 грн |
| BTA316-800C,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 907 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 100.50 грн |
| 6+ | 83.14 грн |
| 25+ | 73.81 грн |
| 100+ | 66.18 грн |
| BTA316Y-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1018 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.17 грн |
| 11+ | 40.72 грн |
| 12+ | 35.97 грн |
| 50+ | 34.70 грн |
| BTA316B-800C,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 791 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 124.26 грн |
| 10+ | 75.17 грн |
| 25+ | 65.33 грн |
| 100+ | 51.67 грн |
| 250+ | 43.52 грн |
| BTA316Y-800CTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 519 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.17 грн |
| 12+ | 35.89 грн |
| 13+ | 35.04 грн |
| BTA316B-600C,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 601 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.19 грн |
| 10+ | 60.83 грн |
| 100+ | 47.00 грн |
| 400+ | 40.30 грн |
| BTA316X-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.56 грн |
| 10+ | 44.29 грн |
| 25+ | 35.89 грн |
| BTA216X-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 832 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.75 грн |
| 10+ | 58.96 грн |
| 100+ | 49.29 грн |
| 250+ | 45.39 грн |
| 500+ | 42.59 грн |
| BTA316-600ET,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 157 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 100.50 грн |
| 10+ | 54.21 грн |
| 50+ | 43.61 грн |
| 100+ | 40.04 грн |
| BTA316-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.23 грн |
| 10+ | 44.88 грн |
| BTA316X-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.56 грн |
| 9+ | 48.10 грн |
| 10+ | 42.59 грн |
| 30+ | 38.26 грн |
| 100+ | 35.72 грн |
| BTA316B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| ACT108-800EQP |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
на замовлення 9219 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.30 грн |
| 16+ | 27.83 грн |
| 25+ | 16.97 грн |
| 100+ | 15.02 грн |
| 500+ | 13.40 грн |
| 2000+ | 12.56 грн |
| BT148W-600R,115 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 50µA
Max. forward impulse current: 10A
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 2µs
Load current: 0.6A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 50µA
Max. forward impulse current: 10A
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 2µs
Load current: 0.6A
на замовлення 5546 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.91 грн |
| 14+ | 32.15 грн |
| 50+ | 24.26 грн |
| 100+ | 21.55 грн |
| 200+ | 19.09 грн |
| 500+ | 16.29 грн |
| 1000+ | 14.34 грн |
| 2000+ | 12.64 грн |
| 5000+ | 11.71 грн |
| BT139-600.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| BYW29ED-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
на замовлення 689 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.30 грн |
| 11+ | 42.08 грн |
| 100+ | 32.07 грн |
| 500+ | 26.89 грн |
| BYV44-500,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ26AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| ACT108-600E,126 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: Ammo Pack
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: Ammo Pack
на замовлення 1539 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.14 грн |
| 56+ | 7.64 грн |
| 100+ | 7.30 грн |
| BTA225B-600B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 4075 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 208.32 грн |
| 10+ | 124.71 грн |
| 100+ | 89.93 грн |
| 500+ | 75.51 грн |
| 800+ | 72.96 грн |
| BTA225B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
на замовлення 502 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 174.51 грн |
| 10+ | 87.39 грн |
| 100+ | 72.96 грн |
| 500+ | 65.33 грн |
| BTA225-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 179.08 грн |
| 10+ | 99.26 грн |
| 50+ | 81.45 грн |
| 100+ | 75.51 грн |
| 500+ | 62.78 грн |
| BTA203-800CTEP |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 3A; TO92; Igt: 30mA; Ifsm: 27A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 3A
Case: TO92
Gate current: 30mA
Max. forward impulse current: 27A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 3A; TO92; Igt: 30mA; Ifsm: 27A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 3A
Case: TO92
Gate current: 30mA
Max. forward impulse current: 27A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| BTA225-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Gate current: 50mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 25A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Gate current: 50mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 25A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 190A
на замовлення 1031 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.85 грн |
| 10+ | 72.96 грн |
| 50+ | 66.18 грн |
| 100+ | 63.63 грн |
| 250+ | 59.39 грн |
| 500+ | 56.84 грн |
| BTA206X-800CT/DGQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
на замовлення 635 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.14 грн |
| 10+ | 50.06 грн |
| 50+ | 35.46 грн |
| 100+ | 31.39 грн |
| 250+ | 27.49 грн |
| 500+ | 25.45 грн |
| BT155K-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 765 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 172.68 грн |
| 5+ | 140.83 грн |
| 30+ | 127.26 грн |
| 120+ | 118.78 грн |
| 450+ | 117.93 грн |
| BT155W-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Turn-on time: 2µs
Gate current: 50mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Turn-on time: 2µs
Gate current: 50mA
Type of thyristor: thyristor
на замовлення 322 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 277.75 грн |
| 10+ | 176.47 грн |
| 30+ | 150.17 грн |
| 120+ | 125.56 грн |
| 240+ | 122.17 грн |
| BT155Z-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT1292; TOP3I
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Turn-on time: 2µs
Gate current: 50mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT1292; TOP3I
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Turn-on time: 2µs
Gate current: 50mA
Type of thyristor: thyristor
на замовлення 718 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 222.02 грн |
| 5+ | 167.98 грн |
| 25+ | 160.35 грн |
| 90+ | 135.74 грн |
| BT155W-1200T-AQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Application: automotive industry
Turn-on time: 2µs
Gate current: 3mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Application: automotive industry
Turn-on time: 2µs
Gate current: 3mA
Type of thyristor: thyristor
на замовлення 65 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 276.84 грн |
| 10+ | 224.83 грн |
| 25+ | 206.16 грн |
| BT158W-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 448.61 грн |
| 10+ | 280.82 грн |
| 30+ | 240.95 грн |
| 90+ | 238.40 грн |
| BT150S-600R,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
| WNS30H100CBJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
на замовлення 128 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 111.47 грн |
| 10+ | 65.24 грн |
| 100+ | 42.76 грн |
| PHE13005,127 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Collector-emitter voltage: 400V
Power dissipation: 75W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 10...40
Kind of package: tube
Case: TO220AB
Collector current: 4A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Collector-emitter voltage: 400V
Power dissipation: 75W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 10...40
Kind of package: tube
Case: TO220AB
Collector current: 4A
на замовлення 2434 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.22 грн |
| 9+ | 47.51 грн |
| 11+ | 41.06 грн |
| 50+ | 27.32 грн |
| 100+ | 23.08 грн |
| 500+ | 17.05 грн |
| 1000+ | 15.53 грн |
| 2000+ | 14.85 грн |
| BT148-400R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Max. forward impulse current: 35A
Gate current: 15µA
Max. off-state voltage: 0.4kV
Turn-on time: 2µs
Load current: 2.5A
Max. load current: 4A
Kind of package: tube
Case: SIP3; SOT82
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Max. forward impulse current: 35A
Gate current: 15µA
Max. off-state voltage: 0.4kV
Turn-on time: 2µs
Load current: 2.5A
Max. load current: 4A
Kind of package: tube
Case: SIP3; SOT82
Type of thyristor: thyristor
на замовлення 990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.77 грн |
| 13+ | 33.34 грн |
| 50+ | 26.98 грн |
| 100+ | 24.60 грн |
| 500+ | 19.94 грн |
| BT148-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Max. forward impulse current: 35A
Gate current: 15µA
Max. off-state voltage: 500V
Turn-on time: 2µs
Load current: 2.5A
Max. load current: 4A
Kind of package: tube
Case: SIP3; SOT82
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Max. forward impulse current: 35A
Gate current: 15µA
Max. off-state voltage: 500V
Turn-on time: 2µs
Load current: 2.5A
Max. load current: 4A
Kind of package: tube
Case: SIP3; SOT82
Type of thyristor: thyristor
товару немає в наявності
В кошику
од. на суму грн.
| NXPSC206506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NXPSC20650W-AQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
Max. load current: 20A
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| NXPSC20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| WNSC6D20650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
на замовлення 784 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 213.80 грн |
| 10+ | 139.14 грн |
| 100+ | 117.93 грн |
| 500+ | 95.02 грн |
| NXPLQSC20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| WNSC2D20650CJQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
Мінімальне замовлення: 2400 шт
В кошику
од. на суму грн.
| WNSC2D20650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| WNSC6D20650WQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| ACT102H-600D,118 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD
Type of thyristor: AC switch
Max. load current: 0.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Gate current: 5mA
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD
Type of thyristor: AC switch
Max. load current: 0.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Gate current: 5mA
Features of semiconductor devices: internally triggered
на замовлення 1234 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.62 грн |
| 35+ | 12.47 грн |
| 36+ | 11.88 грн |
| 38+ | 11.20 грн |
| BT137X-600/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA425Z-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| BTA425Y-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 899 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 143.45 грн |
| 10+ | 86.54 грн |
| 25+ | 75.51 грн |
| 50+ | 69.57 грн |
| 100+ | 65.33 грн |
| 250+ | 61.08 грн |
| 500+ | 59.39 грн |
| BTA425X-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 377 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.58 грн |
| 7+ | 65.33 грн |
| 25+ | 57.69 грн |
| 100+ | 56.84 грн |
| BTA420X-800BT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 200A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 200A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 303 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 132.48 грн |
| 10+ | 74.49 грн |
| 50+ | 58.62 грн |
| 100+ | 53.19 грн |
| BYC10-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; Ifsm: 65A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; Ifsm: 65A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
на замовлення 229 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.75 грн |
| 10+ | 53.11 грн |
| 25+ | 45.81 грн |
| 50+ | 41.23 грн |
| 100+ | 37.58 грн |
| BTA420-800CT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| BTA420X-800CT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| BTA420-800BT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| BTA420X-800CT/L02Q |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| BTA420Y-800BT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| BTA420Y-800CT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MURS360BJ |
![]() |
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.88V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.88V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
на замовлення 2137 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.50 грн |
| 25+ | 17.56 грн |
| 100+ | 13.07 грн |
| 500+ | 10.01 грн |
| 1000+ | 8.65 грн |
| WSJM65R099DQ |
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Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.

























