Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5988) > Сторінка 96 з 100
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BYR5D-1200PJ | WeEn Semiconductors |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: ultrafast switching Max. forward impulse current: 55A Max. forward voltage: 1.55V Load current: 5A Type of diode: rectifying |
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BYV10D-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 120A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DPAK Kind of package: reel; tape Max. forward impulse current: 120A |
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BTA312X-800B/DGQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 50mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312X-800C,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312X-800CTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 35mA Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 956 шт: термін постачання 21-30 дні (днів) |
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BTA312X-800E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312Y-800C,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA316X-600B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.6kV Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 50mA Max. load current: 16A |
на замовлення 997 шт: термін постачання 21-30 дні (днів) |
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BTA316X-600C,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.6kV Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 35mA Max. load current: 16A |
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BTA316X-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.6kV Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 10mA Max. load current: 16A |
на замовлення 816 шт: термін постачання 21-30 дні (днів) |
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BTA316X-800B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 50mA Max. load current: 16A |
на замовлення 993 шт: термін постачання 21-30 дні (днів) |
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BTA316X-800B0,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 50mA Max. load current: 16A |
на замовлення 1902 шт: термін постачання 21-30 дні (днів) |
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BTA316X-800C,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 35mA Max. load current: 16A |
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| BTA316X-800C/L03Q | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Max. forward impulse current: 150A Type of thyristor: triac Gate current: 35mA Max. load current: 16A |
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BTA316X-800E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 10mA Max. load current: 16A |
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BTA316Y-800BTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: high temperature; sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 50mA Max. load current: 16A |
на замовлення 1135 шт: термін постачання 21-30 дні (днів) |
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BTA316Y-800CTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. off-state voltage: 0.8kV Features of semiconductor devices: high temperature; sensitive gate Max. forward impulse current: 140A Type of thyristor: triac Gate current: 35mA Max. load current: 16A |
на замовлення 784 шт: термін постачання 21-30 дні (днів) |
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| Z0109NA,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape |
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| Z0109NA,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: Ammo Pack |
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BTA208X-600D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA208X-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 966 шт: термін постачання 21-30 дні (днів) |
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BTA208X-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312B-600B,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 50mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 435 шт: термін постачання 21-30 дні (днів) |
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BTA312B-600C,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
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BTA312B-600CT,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 549 шт: термін постачання 21-30 дні (днів) |
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BTA312B-600D,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 5mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
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BTA312B-600E,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
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BTA312G-600CTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; I2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: I2PAK Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312X-600B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 50mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312X-600C,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312X-600D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 5mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 856 шт: термін постачання 21-30 дні (днів) |
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BTA312X-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312Y-600C,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 615 шт: термін постачання 21-30 дні (днів) |
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BT258-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us Case: TO220AB Mounting: THT Max. off-state voltage: 0.6kV Turn-on time: 2µs Load current: 5A Max. load current: 8A Kind of package: tube Type of thyristor: thyristor Max. forward impulse current: 75A Gate current: 50µA |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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BYC8-600P,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: SOD59; TO220AC Max. forward voltage: 1.9V Reverse recovery time: 18ns |
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| TYN60K-1400TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.4kV; Ifmax: 94A; 60A; Igt: 80mA; SOT1259,TO3P; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.4kV Max. load current: 94A Load current: 60A Gate current: 80mA Case: SOT1259; TO3P Mounting: THT Kind of package: tube Max. forward impulse current: 825A Turn-on time: 2µs |
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BT145-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us Max. off-state voltage: 0.8kV Max. load current: 25A Load current: 16A Gate current: 5mA Max. forward impulse current: 300A Turn-on time: 2µs Kind of package: tube Type of thyristor: thyristor Mounting: THT Case: TO220AB |
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| ACTT6-800E,127 | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Gate current: 10mA Case: TO220AB Mounting: THT Kind of package: tube |
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BTA208X-800B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 574 шт: термін постачання 21-30 дні (днів) |
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| BTA208X-800B/L02Q | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 50mA Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA208X-800E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 365 шт: термін постачання 21-30 дні (днів) |
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BTA208X-800F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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| SMDJ14AJ | WeEn Semiconductors |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 15.75÷17.04V; 129.3A; unidirectional; SMC; SMDJ Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 14V Breakdown voltage: 15.75...17.04V Max. forward impulse current: 129.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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ESDALD05BCX | WeEn Semiconductors |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; SOD323; Ch: 1; LD Case: SOD323 Mounting: SMD Manufacturer series: LD Number of channels: 1 Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.35kW Max. off-state voltage: 5V Semiconductor structure: bidirectional Max. forward impulse current: 15A Breakdown voltage: 6.5V Leakage current: 1µA |
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MUR440J | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 140A Case: SMC |
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| SMDJ70CAJ | WeEn Semiconductors |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 78.4÷85.4V; 26.5A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 70V Breakdown voltage: 78.4...85.4V Max. forward impulse current: 26.5A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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TYN80W-1600TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 80mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 126A Load current: 80A Gate current: 80mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 850A Turn-on time: 2µs |
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| TYN12B-600LTJ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 120A Turn-on time: 2µs |
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| TYN40-800TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 40A Load current: 25A Gate current: 15mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 495A Turn-on time: 2µs |
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ESDALD12BCX | WeEn Semiconductors |
Category: Transil diodes - arrays Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1 Manufacturer series: LD Mounting: SMD Number of channels: 1 Leakage current: 1µA Breakdown voltage: 13.3V Max. forward impulse current: 10A Semiconductor structure: bidirectional Kind of package: reel; tape Type of diode: TVS array Max. off-state voltage: 12V Features of semiconductor devices: ESD protection Case: SOD323 Peak pulse power dissipation: 0.35kW |
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| BTH151S-650R,118 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; DPAK; SMD; reel,tape Kind of package: reel; tape Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 2mA Max. forward impulse current: 110A Turn-on time: 2µs Case: DPAK Mounting: SMD Type of thyristor: thyristor |
товар відсутній |
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BT258S-800R,118 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us Mounting: SMD Gate current: 50µA Max. forward impulse current: 75A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: DPAK Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A |
на замовлення 1859 шт: термін постачання 21-30 дні (днів) |
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BT258X-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Case: TO220FP Mounting: THT Max. off-state voltage: 0.8kV Turn-on time: 2µs Load current: 5A Max. load current: 8A Kind of package: tube Type of thyristor: thyristor Max. forward impulse current: 75A Gate current: 50µA |
товар відсутній |
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ESDALD03BCX | WeEn Semiconductors |
Category: Transil diodes - arrays Description: Diode: diode arrays; 4.5V; 20A; 350W; bidirectional; SOD323; Ch: 1 Case: SOD323 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Manufacturer series: LD Leakage current: 1µA Type of diode: diode arrays Features of semiconductor devices: ESD protection Peak pulse power dissipation: 350W Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Max. forward impulse current: 20A Breakdown voltage: 4.5V |
товар відсутній |
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| ESDALD05UG4X | WeEn Semiconductors |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 4A Peak pulse power dissipation: 60W Semiconductor structure: unidirectional Mounting: SMD Case: DFN2510 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 4 Kind of package: reel; tape Manufacturer series: LD |
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ESDALD08BCX | WeEn Semiconductors |
Category: Transil diodes - arrays Description: Diode: diode arrays; 8.5V; 15A; 350W; bidirectional; SOD323; Ch: 1 Type of diode: diode arrays Breakdown voltage: 8.5V Max. forward impulse current: 15A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 8V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 1 Kind of package: reel; tape Manufacturer series: LD |
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ESDALD15BCX | WeEn Semiconductors |
Category: Transil diodes - arrays Description: Diode: TVS array; 16.5V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD Type of diode: TVS array Kind of package: reel; tape Case: SOD323 Mounting: SMD Semiconductor structure: bidirectional Leakage current: 1µA Peak pulse power dissipation: 0.35kW Max. off-state voltage: 15V Max. forward impulse current: 8A Breakdown voltage: 16.5V Number of channels: 1 Features of semiconductor devices: ESD protection Manufacturer series: LD |
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ESDALD36BCX | WeEn Semiconductors |
Category: Transil diodes - arrays Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD Mounting: SMD Manufacturer series: LD Kind of package: reel; tape Breakdown voltage: 38V Leakage current: 1µA Number of channels: 1 Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.35kW Case: SOD323 Max. off-state voltage: 36V Semiconductor structure: bidirectional Max. forward impulse current: 3A |
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| WND35P08Q | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 35A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.4kA Case: SOD59; TO220AC Max. forward voltage: 1.35V |
товар відсутній |
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| WND35P08XQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 35A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.4kA Case: SOD113; TO220FP-2 Max. forward voltage: 1.35V |
товар відсутній |
| BYR5D-1200PJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 55A
Max. forward voltage: 1.55V
Load current: 5A
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 55A
Max. forward voltage: 1.55V
Load current: 5A
Type of diode: rectifying
товар відсутній
| BYV10D-600PJ |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 120A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 120A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 120A
товар відсутній
| BTA312X-800B/DGQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA312X-800C,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA312X-800CTQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 956 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.43 грн |
| 10+ | 35.75 грн |
| 25+ | 31.57 грн |
| 29+ | 28.44 грн |
| 78+ | 26.91 грн |
| 250+ | 26.43 грн |
| BTA312X-800E,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA312Y-800C,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA316X-600B,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
на замовлення 997 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.68 грн |
| 10+ | 37.69 грн |
| 25+ | 33.03 грн |
| 29+ | 27.75 грн |
| 80+ | 26.22 грн |
| 250+ | 25.24 грн |
| BTA316X-600C,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
товар відсутній
| BTA316X-600E,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
на замовлення 816 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.43 грн |
| 10+ | 38.25 грн |
| 25+ | 31.02 грн |
| 30+ | 27.47 грн |
| 81+ | 26.01 грн |
| 500+ | 25.8 грн |
| BTA316X-800B,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
на замовлення 993 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.43 грн |
| 9+ | 41.73 грн |
| 10+ | 36.86 грн |
| 26+ | 31.92 грн |
| 70+ | 30.18 грн |
| BTA316X-800B0,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
на замовлення 1902 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.18 грн |
| 9+ | 42.42 грн |
| 10+ | 37.55 грн |
| 24+ | 34.77 грн |
| 30+ | 33.66 грн |
| 64+ | 32.69 грн |
| 100+ | 31.43 грн |
| BTA316X-800C,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
товар відсутній
| BTA316X-800C/L03Q |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 150A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 150A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
товар відсутній
| BTA316X-800E,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
товар відсутній
| BTA316Y-800BTQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
на замовлення 1135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.43 грн |
| 9+ | 39.64 грн |
| 10+ | 34.98 грн |
| 25+ | 32.48 грн |
| 50+ | 31.71 грн |
| 68+ | 30.67 грн |
| BTA316Y-800CTQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Max. forward impulse current: 140A
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
на замовлення 784 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.43 грн |
| 10+ | 34.98 грн |
| 11+ | 31.71 грн |
| 50+ | 29.76 грн |
| Z0109NA,116 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
товар відсутній
| Z0109NA,126 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: Ammo Pack
товар відсутній
| BTA208X-600D,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA208X-600E,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 966 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.43 грн |
| 11+ | 31.71 грн |
| 25+ | 28.37 грн |
| 37+ | 22.11 грн |
| 101+ | 20.86 грн |
| BTA208X-600F,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA312B-600B,118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 435 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.43 грн |
| 11+ | 33.66 грн |
| 25+ | 29.83 грн |
| 29+ | 28.51 грн |
| 79+ | 26.43 грн |
| BTA312B-600C,118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| BTA312B-600CT,118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 549 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 63.66 грн |
| 7+ | 50.91 грн |
| 21+ | 38.53 грн |
| 58+ | 36.37 грн |
| 500+ | 35.05 грн |
| BTA312B-600D,118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| BTA312B-600E,118 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| BTA312G-600CTQ |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; I2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: I2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; I2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: I2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA312X-600B,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA312X-600C,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA312X-600D,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 856 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.68 грн |
| 10+ | 34.77 грн |
| 25+ | 31.29 грн |
| 31+ | 26.5 грн |
| 84+ | 25.04 грн |
| 500+ | 24.76 грн |
| BTA312X-600E,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA312Y-600C,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 615 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.94 грн |
| 25+ | 35.05 грн |
| 26+ | 31.78 грн |
| 70+ | 30.04 грн |
| 500+ | 28.86 грн |
| BT258-600R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: tube
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: tube
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.07 грн |
| 15+ | 23.51 грн |
| 25+ | 20.65 грн |
| BYC8-600P,127 |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
товар відсутній
| TYN60K-1400TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 94A; 60A; Igt: 80mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 94A
Load current: 60A
Gate current: 80mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 825A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 94A; 60A; Igt: 80mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 94A
Load current: 60A
Gate current: 80mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 825A
Turn-on time: 2µs
товар відсутній
| BT145-800R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 5mA
Max. forward impulse current: 300A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO220AB
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 5mA
Max. forward impulse current: 300A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO220AB
товар відсутній
| ACTT6-800E,127 |
|
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 10mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 10mA
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| BTA208X-800B,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 574 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 53.92 грн |
| 10+ | 38.11 грн |
| 25+ | 31.92 грн |
| 35+ | 23.58 грн |
| 94+ | 22.32 грн |
| BTA208X-800B/L02Q |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| BTA208X-800E,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.7 грн |
| 12+ | 29.76 грн |
| 25+ | 27.12 грн |
| 34+ | 24.13 грн |
| 92+ | 22.81 грн |
| 250+ | 21.98 грн |
| BTA208X-800F,127 |
|
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| SMDJ14AJ |
|
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 15.75÷17.04V; 129.3A; unidirectional; SMC; SMDJ
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 14V
Breakdown voltage: 15.75...17.04V
Max. forward impulse current: 129.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 15.75÷17.04V; 129.3A; unidirectional; SMC; SMDJ
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 14V
Breakdown voltage: 15.75...17.04V
Max. forward impulse current: 129.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| ESDALD05BCX |
|
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; SOD323; Ch: 1; LD
Case: SOD323
Mounting: SMD
Manufacturer series: LD
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 15A
Breakdown voltage: 6.5V
Leakage current: 1µA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; SOD323; Ch: 1; LD
Case: SOD323
Mounting: SMD
Manufacturer series: LD
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 15A
Breakdown voltage: 6.5V
Leakage current: 1µA
товар відсутній
| MUR440J |
|
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
товар відсутній
| SMDJ70CAJ |
|
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 78.4÷85.4V; 26.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 70V
Breakdown voltage: 78.4...85.4V
Max. forward impulse current: 26.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 78.4÷85.4V; 26.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 70V
Breakdown voltage: 78.4...85.4V
Max. forward impulse current: 26.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
товар відсутній
| TYN80W-1600TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 80mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 126A
Load current: 80A
Gate current: 80mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 850A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 80mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 126A
Load current: 80A
Gate current: 80mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 850A
Turn-on time: 2µs
товар відсутній
| TYN12B-600LTJ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 120A
Turn-on time: 2µs
товар відсутній
| TYN40-800TQ |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
товар відсутній
| ESDALD12BCX |
|
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Mounting: SMD
Number of channels: 1
Leakage current: 1µA
Breakdown voltage: 13.3V
Max. forward impulse current: 10A
Semiconductor structure: bidirectional
Kind of package: reel; tape
Type of diode: TVS array
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Case: SOD323
Peak pulse power dissipation: 0.35kW
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Mounting: SMD
Number of channels: 1
Leakage current: 1µA
Breakdown voltage: 13.3V
Max. forward impulse current: 10A
Semiconductor structure: bidirectional
Kind of package: reel; tape
Type of diode: TVS array
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Case: SOD323
Peak pulse power dissipation: 0.35kW
товар відсутній
| BTH151S-650R,118 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; DPAK; SMD; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Max. forward impulse current: 110A
Turn-on time: 2µs
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; DPAK; SMD; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Max. forward impulse current: 110A
Turn-on time: 2µs
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
товар відсутній
| BT258S-800R,118 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Mounting: SMD
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Mounting: SMD
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
на замовлення 1859 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.43 грн |
| 18+ | 20.17 грн |
| 25+ | 17.94 грн |
| 48+ | 16.97 грн |
| 100+ | 16.06 грн |
| 500+ | 15.51 грн |
| BT258X-800R,127 |
|
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Mounting: THT
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: tube
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Mounting: THT
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 5A
Max. load current: 8A
Kind of package: tube
Type of thyristor: thyristor
Max. forward impulse current: 75A
Gate current: 50µA
товар відсутній
| ESDALD03BCX |
|
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: diode arrays; 4.5V; 20A; 350W; bidirectional; SOD323; Ch: 1
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: LD
Leakage current: 1µA
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 350W
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 20A
Breakdown voltage: 4.5V
Category: Transil diodes - arrays
Description: Diode: diode arrays; 4.5V; 20A; 350W; bidirectional; SOD323; Ch: 1
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: LD
Leakage current: 1µA
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 350W
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 20A
Breakdown voltage: 4.5V
товар відсутній
| ESDALD05UG4X |
|
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 4A
Peak pulse power dissipation: 60W
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: LD
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 4A
Peak pulse power dissipation: 60W
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: LD
товар відсутній
| ESDALD08BCX |
|
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: diode arrays; 8.5V; 15A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: diode arrays
Breakdown voltage: 8.5V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 8V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
Category: Transil diodes - arrays
Description: Diode: diode arrays; 8.5V; 15A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: diode arrays
Breakdown voltage: 8.5V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 8V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
товар відсутній
| ESDALD15BCX |
|
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 16.5V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Type of diode: TVS array
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 15V
Max. forward impulse current: 8A
Breakdown voltage: 16.5V
Number of channels: 1
Features of semiconductor devices: ESD protection
Manufacturer series: LD
Category: Transil diodes - arrays
Description: Diode: TVS array; 16.5V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Type of diode: TVS array
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 15V
Max. forward impulse current: 8A
Breakdown voltage: 16.5V
Number of channels: 1
Features of semiconductor devices: ESD protection
Manufacturer series: LD
товар відсутній
| ESDALD36BCX |
|
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD
Mounting: SMD
Manufacturer series: LD
Kind of package: reel; tape
Breakdown voltage: 38V
Leakage current: 1µA
Number of channels: 1
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Case: SOD323
Max. off-state voltage: 36V
Semiconductor structure: bidirectional
Max. forward impulse current: 3A
Category: Transil diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD
Mounting: SMD
Manufacturer series: LD
Kind of package: reel; tape
Breakdown voltage: 38V
Leakage current: 1µA
Number of channels: 1
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Case: SOD323
Max. off-state voltage: 36V
Semiconductor structure: bidirectional
Max. forward impulse current: 3A
товар відсутній
| WND35P08Q |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD59; TO220AC
Max. forward voltage: 1.35V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD59; TO220AC
Max. forward voltage: 1.35V
товар відсутній
| WND35P08XQ |
|
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD113; TO220FP-2
Max. forward voltage: 1.35V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD113; TO220FP-2
Max. forward voltage: 1.35V
товар відсутній