Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (3988) > Сторінка 43 з 67
Фото | Назва | Виробник | Інформація |
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MF300K06F2N | YANGJIE TECHNOLOGY | MF300K06F2N-YAN Diode modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MF300K06F3 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F3 2X Packaging: Bulk Package / Case: F3 Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: F3 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MF300K06F3 | YANGJIE TECHNOLOGY | MF300K06F3-YAN Diode modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MF300U05F6 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F6 30 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 155 ns Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: F6 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A Current - Reverse Leakage @ Vr: 500 µA @ 500 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MF300U05F6 | YANGJIE TECHNOLOGY | MF300U05F6-YAN Diode modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MF300U06F2 | YANGJIE TECHNOLOGY |
![]() Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw Max. off-state voltage: 0.6kV Max. forward voltage: 1.65V Load current: 300A Semiconductor structure: single diode Reverse recovery time: 55ns Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw Technology: FRED Type of semiconductor module: diode Case: F2 |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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MF300U06F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Packaging: Bulk Package / Case: F2 Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: F2 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Current - Reverse Leakage @ Vr: 500 µA @ 600 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300U06F2 | YANGJIE TECHNOLOGY |
![]() Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw Max. off-state voltage: 0.6kV Max. forward voltage: 1.65V Load current: 300A Semiconductor structure: single diode Reverse recovery time: 55ns Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw Technology: FRED Type of semiconductor module: diode Case: F2 кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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MF300U07F6 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F6 30 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: F6 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Current - Reverse Leakage @ Vr: 500 µA @ 700 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MF300U12F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Packaging: Bulk Package / Case: F2 Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: F2 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 1200 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG100HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 675 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG100HF12MRC1 | YANGJIE TECHNOLOGY | MG100HF12MRC1-YAN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG100HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 785 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG100P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 442 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG100UZ12GJ | YANGJIE TECHNOLOGY | MG100UZ12GJ-YAN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG100UZ12MRGJ | Yangjie Technology |
Description: Transistors - IGBTs - Modules GJ Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MG10P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 92 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG10P12P2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 105 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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MG10P12P2 | YANGJIE TECHNOLOGY | MG10P12P2-YAN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG150HF12LEC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1136 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG150HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG150HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 968 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG150HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 833 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG150P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG150TF12E2A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG15P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG15P12P2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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MG15P12P2 | YANGJIE TECHNOLOGY | MG15P12P2-YAN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG15P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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MG200HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1150 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG200HF12MRC2 | YANGJIE TECHNOLOGY | MG200HF12MRC2-YAN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG200HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG25P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG25P12E1A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG25P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 175 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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MG25P12P3 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Application: Inverter; motors Case: P3 Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MG25P12P3 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Application: Inverter; motors Case: P3 Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG300HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG300HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1700 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG35P12E1A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 166 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG35P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 215 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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MG35P12P3 | YANGJIE TECHNOLOGY | MG35P12P3-YAN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG400HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1925 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG40HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG40P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 166 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG50HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 50A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 400 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG50HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 485 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG50P12E1A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 166 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG50P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 227 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG50P12E2A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 227 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG50U12GJ | YANGJIE TECHNOLOGY | MG50U12GJ-YAN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MG50UZ12GJ | YANGJIE TECHNOLOGY | MG50UZ12GJ-YAN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG75HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 657 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG75HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 530 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG75P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 442 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG75P12E2A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 300 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG75U12GJ | YANGJIE TECHNOLOGY | MG75U12GJ-YAN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG75U12MRGJ | Yangjie Technology |
Description: Transistors - IGBTs - Modules GJ Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 420 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MG75UZ12GJ | YANGJIE TECHNOLOGY | MG75UZ12GJ-YAN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG75UZ12MRGJ | Yangjie Technology |
Description: Transistors - IGBTs - Modules GJ Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MF300K06F2N |
Виробник: YANGJIE TECHNOLOGY
MF300K06F2N-YAN Diode modules
MF300K06F2N-YAN Diode modules
товару немає в наявності
В кошику
од. на суму грн.
MF300K06F3 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F3 2X
Packaging: Bulk
Package / Case: F3 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: F3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 600 V
Description: Diodes - Bridge Rectifiers F3 2X
Packaging: Bulk
Package / Case: F3 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: F3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 1625.26 грн |
50+ | 1478.14 грн |
100+ | 1391.22 грн |
200+ | 1223.96 грн |
400+ | 1101.56 грн |
1000+ | 1019.99 грн |
MF300K06F3 |
Виробник: YANGJIE TECHNOLOGY
MF300K06F3-YAN Diode modules
MF300K06F3-YAN Diode modules
товару немає в наявності
В кошику
од. на суму грн.
MF300U05F6 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F6 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 155 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 500 V
Description: Diodes - Bridge Rectifiers F6 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 155 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 500 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 2876.40 грн |
30+ | 2615.93 грн |
60+ | 2462.04 грн |
120+ | 2166.10 грн |
240+ | 1949.51 грн |
600+ | 1805.09 грн |
MF300U05F6 |
Виробник: YANGJIE TECHNOLOGY
MF300U05F6-YAN Diode modules
MF300U05F6-YAN Diode modules
товару немає в наявності
В кошику
од. на суму грн.
MF300U06F2 |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.65V
Load current: 300A
Semiconductor structure: single diode
Reverse recovery time: 55ns
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Type of semiconductor module: diode
Case: F2
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.65V
Load current: 300A
Semiconductor structure: single diode
Reverse recovery time: 55ns
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Type of semiconductor module: diode
Case: F2
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1635.89 грн |
2+ | 1436.47 грн |
3+ | 1435.71 грн |
MF300U06F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: F2 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: F2 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 2071.17 грн |
40+ | 1883.70 грн |
80+ | 1772.85 грн |
160+ | 1434.89 грн |
320+ | 1147.91 грн |
800+ | 1004.42 грн |
MF300U06F2 |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.65V
Load current: 300A
Semiconductor structure: single diode
Reverse recovery time: 55ns
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Type of semiconductor module: diode
Case: F2
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.65V
Load current: 300A
Semiconductor structure: single diode
Reverse recovery time: 55ns
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Type of semiconductor module: diode
Case: F2
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1963.07 грн |
2+ | 1790.07 грн |
3+ | 1722.85 грн |
MF300U07F6 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F6 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 700 V
Description: Diodes - Bridge Rectifiers F6 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 700 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 2325.05 грн |
30+ | 2114.50 грн |
60+ | 1990.12 грн |
120+ | 1750.92 грн |
240+ | 1575.79 грн |
600+ | 1459.06 грн |
MF300U12F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: F2 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: F2 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 3345.96 грн |
40+ | 3042.97 грн |
80+ | 2864.00 грн |
160+ | 2519.73 грн |
320+ | 2267.77 грн |
800+ | 2099.81 грн |
MG100HF12LEC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 675 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 675 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 3256.55 грн |
50+ | 2961.71 грн |
100+ | 2787.55 грн |
200+ | 2452.51 грн |
400+ | 2207.21 грн |
1000+ | 2043.71 грн |
MG100HF12MRC1 |
Виробник: YANGJIE TECHNOLOGY
MG100HF12MRC1-YAN IGBT modules
MG100HF12MRC1-YAN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
MG100HF12TLC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 785 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 785 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 3311.16 грн |
50+ | 3011.40 грн |
100+ | 2834.27 грн |
200+ | 2493.62 грн |
400+ | 2244.23 грн |
1000+ | 2078.00 грн |
MG100P12E2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 442 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 442 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 9502.36 грн |
30+ | 8642.09 грн |
60+ | 8133.70 грн |
120+ | 7156.14 грн |
240+ | 6440.49 грн |
600+ | 5963.46 грн |
MG100UZ12GJ |
Виробник: YANGJIE TECHNOLOGY
MG100UZ12GJ-YAN IGBT modules
MG100UZ12GJ-YAN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
MG100UZ12MRGJ |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 2549.19 грн |
125+ | 2318.39 грн |
250+ | 2182.08 грн |
500+ | 1919.81 грн |
1000+ | 1727.82 грн |
2500+ | 1599.83 грн |
MG10P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 92 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 92 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 3141.30 грн |
30+ | 2856.89 грн |
60+ | 2688.86 грн |
120+ | 2365.63 грн |
240+ | 2129.08 грн |
600+ | 1971.39 грн |
MG10P12P2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
36+ | 1947.51 грн |
180+ | 1771.17 грн |
360+ | 1666.97 грн |
720+ | 1466.60 грн |
1440+ | 1319.95 грн |
3600+ | 1222.16 грн |
MG10P12P2 |
Виробник: YANGJIE TECHNOLOGY
MG10P12P2-YAN IGBT modules
MG10P12P2-YAN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
MG150HF12LEC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 5459.33 грн |
30+ | 4965.05 грн |
60+ | 4673.01 грн |
120+ | 4111.31 грн |
240+ | 3700.21 грн |
600+ | 3426.08 грн |
MG150HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 4888.19 грн |
20+ | 4445.73 грн |
40+ | 4184.20 грн |
80+ | 3681.30 грн |
160+ | 3313.20 грн |
400+ | 3067.78 грн |
MG150HF12TLC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 968 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 968 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 4366.41 грн |
50+ | 3822.44 грн |
100+ | 3440.20 грн |
200+ | 2869.77 грн |
400+ | 2511.05 грн |
1000+ | 2152.33 грн |
MG150HF12TLC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 5057.89 грн |
30+ | 4600.00 грн |
60+ | 4329.45 грн |
120+ | 3809.05 грн |
240+ | 3428.16 грн |
600+ | 3174.18 грн |
MG150P12E2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 12881.82 грн |
30+ | 11715.66 грн |
60+ | 11026.52 грн |
120+ | 9701.24 грн |
240+ | 8731.10 грн |
600+ | 8084.36 грн |
MG150TF12E2A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 10808.84 грн |
30+ | 9830.30 грн |
60+ | 9252.07 грн |
120+ | 8140.00 грн |
240+ | 7326.02 грн |
600+ | 6783.38 грн |
MG15P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 3228.16 грн |
40+ | 2935.87 грн |
80+ | 2763.17 грн |
160+ | 2431.06 грн |
320+ | 2187.91 грн |
800+ | 2025.84 грн |
MG15P12P2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
36+ | 2503.94 грн |
180+ | 2277.26 грн |
360+ | 2143.24 грн |
720+ | 1885.66 грн |
1440+ | 1697.11 грн |
3600+ | 1571.42 грн |
MG15P12P2 |
Виробник: YANGJIE TECHNOLOGY
MG15P12P2-YAN IGBT modules
MG15P12P2-YAN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
MG15P12P3 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 2402.55 грн |
120+ | 2185.06 грн |
240+ | 2056.47 грн |
480+ | 1809.32 грн |
960+ | 1628.38 грн |
2400+ | 1507.78 грн |
MG200HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 6118.13 грн |
20+ | 5564.33 грн |
40+ | 5236.98 грн |
80+ | 4607.56 грн |
160+ | 4146.82 грн |
400+ | 3839.61 грн |
MG200HF12MRC2 |
Виробник: YANGJIE TECHNOLOGY
MG200HF12MRC2-YAN IGBT modules
MG200HF12MRC2-YAN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
MG200HF12TLC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 6578.45 грн |
30+ | 5982.89 грн |
60+ | 5630.99 грн |
120+ | 4954.16 грн |
240+ | 4458.77 грн |
600+ | 4128.46 грн |
MG25P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 5121.60 грн |
40+ | 4657.95 грн |
80+ | 4383.96 грн |
160+ | 3857.05 грн |
320+ | 3471.35 грн |
800+ | 3214.22 грн |
MG25P12E1A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 3529.94 грн |
40+ | 3210.39 грн |
80+ | 3021.49 грн |
160+ | 2658.34 грн |
320+ | 2392.53 грн |
800+ | 2215.32 грн |
MG25P12P3 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 2889.83 грн |
120+ | 2628.24 грн |
240+ | 2473.58 грн |
480+ | 2176.29 грн |
960+ | 1958.69 грн |
2400+ | 1813.55 грн |
MG25P12P3 |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Application: Inverter; motors
Case: P3
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Application: Inverter; motors
Case: P3
Max. off-state voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
MG25P12P3 |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Application: Inverter; motors
Case: P3
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Application: Inverter; motors
Case: P3
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
MG300HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 7422.10 грн |
20+ | 6750.13 грн |
40+ | 6353.11 грн |
80+ | 5589.49 грн |
160+ | 5030.54 грн |
400+ | 4657.88 грн |
MG300HF12TLC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 6351.14 грн |
30+ | 5733.66 грн |
60+ | 5351.42 грн |
120+ | 4663.38 грн |
240+ | 4304.66 грн |
600+ | 3802.45 грн |
MG35P12E1A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 4277.59 грн |
40+ | 3890.25 грн |
80+ | 3661.44 грн |
160+ | 3221.32 грн |
320+ | 2899.19 грн |
800+ | 2684.46 грн |
MG35P12P3 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 3627.76 грн |
120+ | 3299.30 грн |
240+ | 3105.20 грн |
480+ | 2732.02 грн |
960+ | 2458.82 грн |
2400+ | 2276.66 грн |
MG35P12P3 |
Виробник: YANGJIE TECHNOLOGY
MG35P12P3-YAN IGBT modules
MG35P12P3-YAN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
MG400HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1925 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1925 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 9719.02 грн |
20+ | 8839.17 грн |
40+ | 8319.24 грн |
80+ | 7319.28 грн |
160+ | 6587.42 грн |
400+ | 6099.41 грн |
MG40HF12LEC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 2198.13 грн |
50+ | 1999.06 грн |
100+ | 1881.48 грн |
200+ | 1655.36 грн |
400+ | 1489.84 грн |
1000+ | 1379.50 грн |
MG40P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 4324.73 грн |
40+ | 3933.22 грн |
80+ | 3701.81 грн |
160+ | 3256.91 грн |
320+ | 2931.19 грн |
800+ | 2714.09 грн |
MG50HF12LEC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 50A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 50A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 2278.63 грн |
50+ | 2072.30 грн |
100+ | 1950.44 грн |
200+ | 1715.98 грн |
400+ | 1544.37 грн |
1000+ | 1430.01 грн |
MG50HF12TLC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 485 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 485 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 2731.54 грн |
50+ | 2484.28 грн |
100+ | 2338.11 грн |
200+ | 2057.12 грн |
400+ | 1851.36 грн |
1000+ | 1714.26 грн |
MG50P12E1A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 5530.05 грн |
40+ | 5029.42 грн |
80+ | 4733.64 грн |
160+ | 4164.69 грн |
320+ | 3748.21 грн |
800+ | 3470.56 грн |
MG50P12E2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 6671.87 грн |
30+ | 6067.82 грн |
60+ | 5710.88 грн |
120+ | 5024.47 грн |
240+ | 4522.04 грн |
600+ | 4187.07 грн |
MG50P12E2A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 6670.94 грн |
30+ | 6067.06 грн |
60+ | 5710.19 грн |
120+ | 5023.82 грн |
240+ | 4521.47 грн |
600+ | 4186.57 грн |
MG50U12GJ |
Виробник: YANGJIE TECHNOLOGY
MG50U12GJ-YAN IGBT modules
MG50U12GJ-YAN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
MG50UZ12GJ |
Виробник: YANGJIE TECHNOLOGY
MG50UZ12GJ-YAN IGBT modules
MG50UZ12GJ-YAN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
MG75HF12LEC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 657 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 657 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 2872.38 грн |
50+ | 2612.33 грн |
100+ | 2458.60 грн |
200+ | 2163.09 грн |
400+ | 1946.78 грн |
1000+ | 1802.58 грн |
MG75HF12TLC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 530 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 530 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 2981.94 грн |
50+ | 2711.95 грн |
100+ | 2552.47 грн |
200+ | 2245.67 грн |
400+ | 2021.11 грн |
1000+ | 1871.38 грн |
MG75P12E2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 442 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 442 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 7487.73 грн |
30+ | 6809.84 грн |
60+ | 6409.24 грн |
120+ | 5638.89 грн |
240+ | 5075.05 грн |
600+ | 4699.11 грн |
MG75P12E2A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 7494.61 грн |
30+ | 6816.18 грн |
60+ | 6415.21 грн |
120+ | 5644.13 грн |
240+ | 5079.71 грн |
600+ | 4703.49 грн |
MG75U12GJ |
Виробник: YANGJIE TECHNOLOGY
MG75U12GJ-YAN IGBT modules
MG75U12GJ-YAN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
MG75U12MRGJ |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 420 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 420 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 2230.52 грн |
125+ | 2028.57 грн |
250+ | 1909.23 грн |
500+ | 1679.75 грн |
1000+ | 1511.80 грн |
2500+ | 1399.80 грн |
MG75UZ12GJ |
Виробник: YANGJIE TECHNOLOGY
MG75UZ12GJ-YAN IGBT modules
MG75UZ12GJ-YAN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
MG75UZ12MRGJ |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 2389.87 грн |
125+ | 2173.52 грн |
250+ | 2045.62 грн |
500+ | 1799.78 грн |
1000+ | 1619.77 грн |
2500+ | 1499.81 грн |