Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (4517) > Сторінка 47 з 76
Фото | Назва | Виробник | Інформація |
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MF300C06F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: F2 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Current - Reverse Leakage @ Vr: 500 µA @ 600 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300C06F2 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double series; 600V; If: 300A; F2; Ufmax: 1.65V; screw Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.65V Case: F2 Max. off-state voltage: 0.6kV Load current: 300A Semiconductor structure: double series Reverse recovery time: 55ns Max. forward impulse current: 3kA Type of module: diode кількість в упаковці: 1 шт |
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MF300C12F2 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 300A; F2; Ufmax: 1.8V; screw Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.8V Case: F2 Max. off-state voltage: 1.2kV Load current: 300A Semiconductor structure: double series Reverse recovery time: 57ns Max. forward impulse current: 3kA Type of module: diode |
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MF300C12F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: F2 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 1200 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300C12F2 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 300A; F2; Ufmax: 1.8V; screw Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.8V Case: F2 Max. off-state voltage: 1.2kV Load current: 300A Semiconductor structure: double series Reverse recovery time: 57ns Max. forward impulse current: 3kA Type of module: diode кількість в упаковці: 1 шт |
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MF300K04F3 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F3 2X Packaging: Bulk Package / Case: F3 Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: F3 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A Current - Reverse Leakage @ Vr: 500 µA @ 400 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MF300K04F3 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.1V Case: F3 Max. off-state voltage: 0.6kV Load current: 150A x2 Semiconductor structure: common cathode; double Reverse recovery time: 50ns Max. forward impulse current: 3.5kA Type of module: diode |
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MF300K04F3 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.1V Case: F3 Max. off-state voltage: 0.6kV Load current: 150A x2 Semiconductor structure: common cathode; double Reverse recovery time: 50ns Max. forward impulse current: 3.5kA Type of module: diode кількість в упаковці: 1 шт |
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MF300K04F3LG | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F3 2X Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: F3 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A Current - Reverse Leakage @ Vr: 500 µA @ 400 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MF300K04F3LG | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 400V; If: 150Ax2; F3; screw Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 0.95V Case: F3 Max. off-state voltage: 0.4kV Load current: 150A x2 Semiconductor structure: common cathode; double Reverse recovery time: 70ns Max. forward impulse current: 4kA Type of module: diode |
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MF300K04F3LG | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 400V; If: 150Ax2; F3; screw Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 0.95V Case: F3 Max. off-state voltage: 0.4kV Load current: 150A x2 Semiconductor structure: common cathode; double Reverse recovery time: 70ns Max. forward impulse current: 4kA Type of module: diode кількість в упаковці: 1 шт |
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MF300K06F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: F2 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Current - Reverse Leakage @ Vr: 500 µA @ 600 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300K06F2 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 300A; F2; Ifsm: 3kA Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.65V Case: F2 Max. off-state voltage: 0.6kV Load current: 300A Semiconductor structure: common cathode; double Reverse recovery time: 55ns Max. forward impulse current: 3kA Type of module: diode |
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MF300K06F2 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 300A; F2; Ifsm: 3kA Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.65V Case: F2 Max. off-state voltage: 0.6kV Load current: 300A Semiconductor structure: common cathode; double Reverse recovery time: 55ns Max. forward impulse current: 3kA Type of module: diode кількість в упаковці: 1 шт |
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MF300K06F2N | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2N 3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: F2N Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Current - Reverse Leakage @ Vr: 500 µA @ 600 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300K06F2N | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 300A; F2N; Ifsm: 3kA Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.45V Case: F2N Max. off-state voltage: 0.6kV Load current: 300A Semiconductor structure: common cathode; double Reverse recovery time: 55ns Max. forward impulse current: 3kA Type of module: diode |
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MF300K06F2N | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 300A; F2N; Ifsm: 3kA Electrical mounting: screw Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.45V Case: F2N Max. off-state voltage: 0.6kV Load current: 300A Semiconductor structure: common cathode; double Reverse recovery time: 55ns Max. forward impulse current: 3kA Type of module: diode кількість в упаковці: 1 шт |
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MF300K06F3 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F3 2X Packaging: Bulk Package / Case: F3 Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: F3 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MF300K06F3 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw Technology: FRED Case: F3 Semiconductor structure: common cathode; double Max. off-state voltage: 0.6kV Reverse recovery time: 50ns Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.25V Load current: 150A x2 Max. forward impulse current: 3.5kA Type of module: diode |
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MF300K06F3 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw Technology: FRED Case: F3 Semiconductor structure: common cathode; double Max. off-state voltage: 0.6kV Reverse recovery time: 50ns Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.25V Load current: 150A x2 Max. forward impulse current: 3.5kA Type of module: diode кількість в упаковці: 1 шт |
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MF300U05F6 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F6 30 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 155 ns Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: F6 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A Current - Reverse Leakage @ Vr: 500 µA @ 500 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MF300U05F6 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; single diode; 500V; If: 300A; F6; Ufmax: 1.25V; screw Technology: FRED Case: F6 Semiconductor structure: single diode Max. off-state voltage: 500V Reverse recovery time: 65ns Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.25V Load current: 300A Max. forward impulse current: 5kA Type of module: diode |
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MF300U05F6 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; single diode; 500V; If: 300A; F6; Ufmax: 1.25V; screw Technology: FRED Case: F6 Semiconductor structure: single diode Max. off-state voltage: 500V Reverse recovery time: 65ns Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.25V Load current: 300A Max. forward impulse current: 5kA Type of module: diode кількість в упаковці: 1 шт |
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MF300U06F2 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw Technology: FRED Case: F2 Semiconductor structure: single diode Max. off-state voltage: 0.6kV Reverse recovery time: 55ns Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Load current: 300A Max. forward impulse current: 1.5kA Type of module: diode |
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MF300U06F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Packaging: Bulk Package / Case: F2 Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: F2 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Current - Reverse Leakage @ Vr: 500 µA @ 600 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300U06F2 | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw Technology: FRED Case: F2 Semiconductor structure: single diode Max. off-state voltage: 0.6kV Reverse recovery time: 55ns Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Load current: 300A Max. forward impulse current: 1.5kA Type of module: diode кількість в упаковці: 1 шт |
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MF300U07F6 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F6 30 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: F6 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Current - Reverse Leakage @ Vr: 500 µA @ 700 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MF300U12F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Packaging: Bulk Package / Case: F2 Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: F2 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 1200 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG100HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 675 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG100HF12MRC1 | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: C1 34mm Application: Inverter; motors Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A |
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MG100HF12MRC1 | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: C1 34mm Application: Inverter; motors Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A кількість в упаковці: 1 шт |
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MG100HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 785 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG100P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 442 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG100UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ Case: GJ-UZ Application: Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A |
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MG100UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ Case: GJ-UZ Application: Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A кількість в упаковці: 1 шт |
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MG100UZ12MRGJ | Yangjie Technology |
Description: Transistors - IGBTs - Modules GJ Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MG10P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 92 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG10P12P2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 105 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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MG10P12P2 | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 20A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P2 Gate-emitter voltage: ±20V Collector current: 10A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge |
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MG10P12P2 | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 20A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P2 Gate-emitter voltage: ±20V Collector current: 10A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge кількість в упаковці: 1 шт |
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MG150HF12LEC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1136 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG150HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG150HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 968 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG150HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 833 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG150P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG150TF12E2A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG15P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG15P12P2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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MG15P12P2 | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 30A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P2 Gate-emitter voltage: ±20V Collector current: 15A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge |
товар відсутній |
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MG15P12P2 | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 30A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P2 Gate-emitter voltage: ±20V Collector current: 15A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge кількість в упаковці: 1 шт |
товар відсутній |
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MG15P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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MG200HF12MRC2 | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Application: Inverter; motors Electrical mounting: FASTON connectors; screw Type of module: IGBT Topology: IGBT half-bridge Case: C2 62mm |
товар відсутній |
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MG200HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1150 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG200HF12MRC2 | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Application: Inverter; motors Electrical mounting: FASTON connectors; screw Type of module: IGBT Topology: IGBT half-bridge Case: C2 62mm кількість в упаковці: 1 шт |
товар відсутній |
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MG200HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG25P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG25P12E1A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG25P12P3 | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: IGBT Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Case: P3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Application: Inverter; motors |
товар відсутній |
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MG25P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 175 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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MG25P12P3 | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: IGBT Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Case: P3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Application: Inverter; motors кількість в упаковці: 1 шт |
товар відсутній |
MF300C06F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 2579.8 грн |
40+ | 2346.24 грн |
80+ | 2208.27 грн |
160+ | 1942.83 грн |
320+ | 1748.54 грн |
800+ | 1619.06 грн |
MF300C06F2 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double series; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.65V
Case: F2
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: double series
Reverse recovery time: 55ns
Max. forward impulse current: 3kA
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.65V
Case: F2
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: double series
Reverse recovery time: 55ns
Max. forward impulse current: 3kA
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
MF300C12F2 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 300A; F2; Ufmax: 1.8V; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.8V
Case: F2
Max. off-state voltage: 1.2kV
Load current: 300A
Semiconductor structure: double series
Reverse recovery time: 57ns
Max. forward impulse current: 3kA
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 300A; F2; Ufmax: 1.8V; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.8V
Case: F2
Max. off-state voltage: 1.2kV
Load current: 300A
Semiconductor structure: double series
Reverse recovery time: 57ns
Max. forward impulse current: 3kA
Type of module: diode
товар відсутній
MF300C12F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 4492.94 грн |
40+ | 4086.14 грн |
80+ | 3845.8 грн |
160+ | 3383.58 грн |
320+ | 3045.19 грн |
800+ | 2819.64 грн |
MF300C12F2 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 300A; F2; Ufmax: 1.8V; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.8V
Case: F2
Max. off-state voltage: 1.2kV
Load current: 300A
Semiconductor structure: double series
Reverse recovery time: 57ns
Max. forward impulse current: 3kA
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 300A; F2; Ufmax: 1.8V; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.8V
Case: F2
Max. off-state voltage: 1.2kV
Load current: 300A
Semiconductor structure: double series
Reverse recovery time: 57ns
Max. forward impulse current: 3kA
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
MF300K04F3 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F3 2X
Packaging: Bulk
Package / Case: F3 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: F3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Description: Diodes - Bridge Rectifiers F3 2X
Packaging: Bulk
Package / Case: F3 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: F3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 1188.56 грн |
50+ | 1080.98 грн |
100+ | 1017.34 грн |
200+ | 895.09 грн |
400+ | 805.61 грн |
1000+ | 745.9 грн |
MF300K04F3 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.1V
Case: F3
Max. off-state voltage: 0.6kV
Load current: 150A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 3.5kA
Type of module: diode
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.1V
Case: F3
Max. off-state voltage: 0.6kV
Load current: 150A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 3.5kA
Type of module: diode
товар відсутній
MF300K04F3 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.1V
Case: F3
Max. off-state voltage: 0.6kV
Load current: 150A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 3.5kA
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.1V
Case: F3
Max. off-state voltage: 0.6kV
Load current: 150A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 3.5kA
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
MF300K04F3LG |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F3 2X
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: F3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Description: Diodes - Bridge Rectifiers F3 2X
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: F3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 1362.53 грн |
50+ | 1239.12 грн |
100+ | 1166.24 грн |
200+ | 1026.07 грн |
400+ | 923.48 грн |
1000+ | 855.08 грн |
MF300K04F3LG |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 150Ax2; F3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 0.95V
Case: F3
Max. off-state voltage: 0.4kV
Load current: 150A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 70ns
Max. forward impulse current: 4kA
Type of module: diode
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 150Ax2; F3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 0.95V
Case: F3
Max. off-state voltage: 0.4kV
Load current: 150A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 70ns
Max. forward impulse current: 4kA
Type of module: diode
товар відсутній
MF300K04F3LG |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 150Ax2; F3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 0.95V
Case: F3
Max. off-state voltage: 0.4kV
Load current: 150A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 70ns
Max. forward impulse current: 4kA
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 150Ax2; F3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 0.95V
Case: F3
Max. off-state voltage: 0.4kV
Load current: 150A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 70ns
Max. forward impulse current: 4kA
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
MF300K06F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 2579.8 грн |
40+ | 2346.24 грн |
80+ | 2208.27 грн |
160+ | 1942.83 грн |
320+ | 1748.54 грн |
800+ | 1619.06 грн |
MF300K06F2 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300A; F2; Ifsm: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.65V
Case: F2
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 3kA
Type of module: diode
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300A; F2; Ifsm: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.65V
Case: F2
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 3kA
Type of module: diode
товар відсутній
MF300K06F2 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300A; F2; Ifsm: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.65V
Case: F2
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 3kA
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300A; F2; Ifsm: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.65V
Case: F2
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 3kA
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
MF300K06F2N |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2N 3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: F2N
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Description: Diodes - Bridge Rectifiers F2N 3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: F2N
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 2509.66 грн |
40+ | 2282.47 грн |
80+ | 2148.18 грн |
160+ | 1889.96 грн |
320+ | 1700.96 грн |
800+ | 1575 грн |
MF300K06F2N |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300A; F2N; Ifsm: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.45V
Case: F2N
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 3kA
Type of module: diode
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300A; F2N; Ifsm: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.45V
Case: F2N
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 3kA
Type of module: diode
товар відсутній
MF300K06F2N |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300A; F2N; Ifsm: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.45V
Case: F2N
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 3kA
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300A; F2N; Ifsm: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.45V
Case: F2N
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 3kA
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
MF300K06F3 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F3 2X
Packaging: Bulk
Package / Case: F3 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: F3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 600 V
Description: Diodes - Bridge Rectifiers F3 2X
Packaging: Bulk
Package / Case: F3 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: F3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 1478.44 грн |
50+ | 1344.61 грн |
100+ | 1265.54 грн |
200+ | 1113.39 грн |
400+ | 1002.05 грн |
1000+ | 927.85 грн |
MF300K06F3 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw
Technology: FRED
Case: F3
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.6kV
Reverse recovery time: 50ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.25V
Load current: 150A x2
Max. forward impulse current: 3.5kA
Type of module: diode
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw
Technology: FRED
Case: F3
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.6kV
Reverse recovery time: 50ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.25V
Load current: 150A x2
Max. forward impulse current: 3.5kA
Type of module: diode
товар відсутній
MF300K06F3 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw
Technology: FRED
Case: F3
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.6kV
Reverse recovery time: 50ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.25V
Load current: 150A x2
Max. forward impulse current: 3.5kA
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 150Ax2; F3; screw
Technology: FRED
Case: F3
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.6kV
Reverse recovery time: 50ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.25V
Load current: 150A x2
Max. forward impulse current: 3.5kA
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
MF300U05F6 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F6 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 155 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 500 V
Description: Diodes - Bridge Rectifiers F6 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 155 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 500 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 2616.57 грн |
30+ | 2379.62 грн |
60+ | 2239.63 грн |
120+ | 1970.43 грн |
240+ | 1773.4 грн |
600+ | 1642.03 грн |
MF300U05F6 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; single diode; 500V; If: 300A; F6; Ufmax: 1.25V; screw
Technology: FRED
Case: F6
Semiconductor structure: single diode
Max. off-state voltage: 500V
Reverse recovery time: 65ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.25V
Load current: 300A
Max. forward impulse current: 5kA
Type of module: diode
Category: Diode modules
Description: Module: diode; single diode; 500V; If: 300A; F6; Ufmax: 1.25V; screw
Technology: FRED
Case: F6
Semiconductor structure: single diode
Max. off-state voltage: 500V
Reverse recovery time: 65ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.25V
Load current: 300A
Max. forward impulse current: 5kA
Type of module: diode
товар відсутній
MF300U05F6 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; single diode; 500V; If: 300A; F6; Ufmax: 1.25V; screw
Technology: FRED
Case: F6
Semiconductor structure: single diode
Max. off-state voltage: 500V
Reverse recovery time: 65ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.25V
Load current: 300A
Max. forward impulse current: 5kA
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; single diode; 500V; If: 300A; F6; Ufmax: 1.25V; screw
Technology: FRED
Case: F6
Semiconductor structure: single diode
Max. off-state voltage: 500V
Reverse recovery time: 65ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.25V
Load current: 300A
Max. forward impulse current: 5kA
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
MF300U06F2 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Technology: FRED
Case: F2
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Reverse recovery time: 55ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Load current: 300A
Max. forward impulse current: 1.5kA
Type of module: diode
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Technology: FRED
Case: F2
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Reverse recovery time: 55ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Load current: 300A
Max. forward impulse current: 1.5kA
Type of module: diode
товар відсутній
MF300U06F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: F2 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: F2 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 1884.07 грн |
40+ | 1713.54 грн |
80+ | 1612.7 грн |
160+ | 1305.27 грн |
320+ | 1044.22 грн |
800+ | 913.69 грн |
MF300U06F2 |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Technology: FRED
Case: F2
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Reverse recovery time: 55ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Load current: 300A
Max. forward impulse current: 1.5kA
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Technology: FRED
Case: F2
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Reverse recovery time: 55ns
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Load current: 300A
Max. forward impulse current: 1.5kA
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
MF300U07F6 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F6 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 700 V
Description: Diodes - Bridge Rectifiers F6 30
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 500 µA @ 700 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 2115.02 грн |
30+ | 1923.49 грн |
60+ | 1810.34 грн |
120+ | 1592.75 грн |
240+ | 1433.45 грн |
600+ | 1327.26 грн |
MF300U12F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: F2 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Description: Diodes - Bridge Rectifiers F2 30
Packaging: Bulk
Package / Case: F2 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: F2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 3043.71 грн |
40+ | 2768.09 грн |
80+ | 2605.29 грн |
160+ | 2292.12 грн |
320+ | 2062.91 грн |
800+ | 1910.13 грн |
MG100HF12LEC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 675 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 675 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 2962.37 грн |
50+ | 2694.17 грн |
100+ | 2535.75 грн |
200+ | 2230.97 грн |
400+ | 2007.83 грн |
1000+ | 1859.09 грн |
MG100HF12MRC1 |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: C1 34mm
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: C1 34mm
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
товар відсутній
MG100HF12MRC1 |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: C1 34mm
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: C1 34mm
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
товар відсутній
MG100HF12TLC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 785 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 785 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 3012.06 грн |
50+ | 2739.37 грн |
100+ | 2578.24 грн |
200+ | 2268.36 грн |
400+ | 2041.51 грн |
1000+ | 1890.29 грн |
MG100P12E2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 442 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 442 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 8643.98 грн |
30+ | 7861.42 грн |
60+ | 7398.96 грн |
120+ | 6509.7 грн |
240+ | 5858.7 грн |
600+ | 5424.76 грн |
MG100UZ12GJ |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ
Case: GJ-UZ
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ
Case: GJ-UZ
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
товар відсутній
MG100UZ12GJ |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ
Case: GJ-UZ
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ
Case: GJ-UZ
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
товар відсутній
MG100UZ12MRGJ |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 2318.91 грн |
125+ | 2108.96 грн |
250+ | 1984.97 грн |
500+ | 1746.38 грн |
1000+ | 1571.74 грн |
2500+ | 1455.31 грн |
MG10P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 92 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 92 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 2857.54 грн |
30+ | 2598.82 грн |
60+ | 2445.97 грн |
120+ | 2151.93 грн |
240+ | 1936.76 грн |
600+ | 1793.31 грн |
MG10P12P2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
36+ | 1771.58 грн |
180+ | 1611.17 грн |
360+ | 1516.39 грн |
720+ | 1334.12 грн |
1440+ | 1200.72 грн |
3600+ | 1111.76 грн |
MG10P12P2 |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 20A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 10A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 20A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 10A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
товар відсутній
MG10P12P2 |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 20A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 10A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 20A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 10A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
товар відсутній
MG150HF12LEC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 4966.17 грн |
30+ | 4516.54 грн |
60+ | 4250.89 грн |
120+ | 3739.92 грн |
240+ | 3365.96 грн |
600+ | 3116.59 грн |
MG150HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 4446.63 грн |
20+ | 4044.13 грн |
40+ | 3806.23 грн |
80+ | 3348.76 грн |
160+ | 3013.91 грн |
400+ | 2790.66 грн |
MG150HF12TLC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 968 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 968 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 3971.98 грн |
50+ | 3477.15 грн |
100+ | 3129.44 грн |
200+ | 2610.54 грн |
400+ | 2284.22 грн |
1000+ | 1957.9 грн |
MG150HF12TLC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 4600.99 грн |
30+ | 4184.47 грн |
60+ | 3938.36 грн |
120+ | 3464.97 грн |
240+ | 3118.48 грн |
600+ | 2887.45 грн |
MG150P12E2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 11718.17 грн |
30+ | 10657.35 грн |
60+ | 10030.47 грн |
120+ | 8824.89 грн |
240+ | 7942.39 грн |
600+ | 7354.08 грн |
MG150TF12E2A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 9832.44 грн |
30+ | 8942.3 грн |
60+ | 8416.3 грн |
120+ | 7404.69 грн |
240+ | 6664.24 грн |
600+ | 6170.61 грн |
MG15P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 2936.55 грн |
40+ | 2670.66 грн |
80+ | 2513.56 грн |
160+ | 2211.45 грн |
320+ | 1990.27 грн |
800+ | 1842.84 грн |
MG15P12P2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
36+ | 2277.75 грн |
180+ | 2071.55 грн |
360+ | 1949.64 грн |
720+ | 1715.32 грн |
1440+ | 1543.81 грн |
3600+ | 1429.47 грн |
MG15P12P2 |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
товар відсутній
MG15P12P2 |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
товар відсутній
MG15P12P3 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 2185.52 грн |
120+ | 1987.68 грн |
240+ | 1870.71 грн |
480+ | 1645.88 грн |
960+ | 1481.28 грн |
2400+ | 1371.58 грн |
MG200HF12MRC2 |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
товар відсутній
MG200HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 5565.46 грн |
20+ | 5061.69 грн |
40+ | 4763.9 грн |
80+ | 4191.35 грн |
160+ | 3772.23 грн |
400+ | 3492.77 грн |
MG200HF12MRC2 |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: Inverter; motors
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
кількість в упаковці: 1 шт
товар відсутній
MG200HF12TLC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 5984.2 грн |
30+ | 5442.44 грн |
60+ | 5122.33 грн |
120+ | 4506.64 грн |
240+ | 4055.99 грн |
600+ | 3755.52 грн |
MG25P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 4658.95 грн |
40+ | 4237.19 грн |
80+ | 3987.94 грн |
160+ | 3508.63 грн |
320+ | 3157.77 грн |
800+ | 2923.87 грн |
MG25P12E1A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 3211.07 грн |
40+ | 2920.39 грн |
80+ | 2748.55 грн |
160+ | 2418.21 грн |
320+ | 2176.41 грн |
800+ | 2015.2 грн |
MG25P12P3 |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
товар відсутній
MG25P12P3 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 2628.79 грн |
120+ | 2390.82 грн |
240+ | 2250.13 грн |
480+ | 1979.7 грн |
960+ | 1781.76 грн |
2400+ | 1649.73 грн |
MG25P12P3 |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
кількість в упаковці: 1 шт
товар відсутній