Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72934) > Сторінка 1205 з 1216
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FMMT458QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.225A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 50MHz Application: automotive industry Current gain: 15...300 Pulsed collector current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMBJ7.5CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.58V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 1650 шт: термін постачання 14-30 дні (днів) |
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BAT54TW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: triple independent Capacitance: 10pF Max. forward voltage: 0.24V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54TWQ-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: triple independent Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS40TWQ-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: triple independent Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| AP1507-D5-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 1.23÷18VDC; 3A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...22V DC Output voltage: 1.23...18V DC Output current: 3A Case: TO252-5 Mounting: SMD Frequency: 150kHz Topology: buck Operating temperature: -20...85°C Kind of package: reel; tape Efficiency: 74% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ5248B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 18V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 3155 шт: термін постачання 14-30 дні (днів) |
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MMSZ5248BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 18V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 3367 шт: термін постачання 14-30 дні (днів) |
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MMSZ5248BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 18V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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B260AE-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Semiconductor structure: single diode Case: SMA Mounting: SMD Leakage current: 14.5mA Kind of package: reel; tape Capacitance: 75pF Max. forward voltage: 0.65V Load current: 2A Max. forward impulse current: 50A |
на замовлення 2178 шт: термін постачання 14-30 дні (днів) |
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B290-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 90V Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Capacitance: 75pF Max. forward voltage: 0.69V Load current: 2A Max. forward impulse current: 50A |
на замовлення 2770 шт: термін постачання 14-30 дні (днів) |
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AZ23C4V7-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: common anode; double |
на замовлення 147 шт: термін постачання 14-30 дні (днів) |
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AZ23C4V3-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.3V; SMD; SOT23; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Tolerance: ±5% Semiconductor structure: common anode; double |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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AP9211SA-AL-HAC-7 | DIODES INCORPORATED |
Category: Battery and battery cells controllersDescription: IC: PMIC; battery charging controller; MOSFET,shutdown input Type of integrated circuit: PMIC Kind of integrated circuit: battery charging controller Integrated circuit features: MOSFET; shutdown input Mounting: SMD Number of rechargeable batteries: 1 x Li+ Case: U-DFN2030-6 Supply voltage: 1.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape |
на замовлення 2890 шт: термін постачання 14-30 дні (днів) |
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KBJ406G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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B190-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Case: SMA Kind of package: reel; tape Max. forward voltage: 0.79V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 90V |
на замовлення 1138 шт: термін постачання 14-30 дні (днів) |
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| B190B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Case: SMB Leakage current: 5mA Kind of package: reel; tape Max. forward voltage: 0.79V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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B190Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Case: SMA Application: automotive industry Leakage current: 5mA Kind of package: reel; tape Max. forward voltage: 0.79V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| B190BQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Case: SMB Application: automotive industry Leakage current: 5mA Kind of package: reel; tape Max. forward voltage: 0.79V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SB190-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 90V; 1A; DO41; Ufmax: 0.8V; reel Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Case: DO41 Kind of package: reel Max. forward voltage: 0.8V Load current: 1A Max. forward impulse current: 25A Max. off-state voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C11-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode Kind of package: reel; tape Case: SOT23 Type of diode: Zener Power dissipation: 0.35W Tolerance: ±5.5% Zener voltage: 11V Semiconductor structure: single diode Mounting: SMD |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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BZX84C11T-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 11V; SMD; SOT523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 11V Mounting: SMD Tolerance: ±5.5% Case: SOT523 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMMT3904W-13-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Current gain: 30...300 Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMMT3904WQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Current gain: 30...300 Quantity in set/package: 3000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMC2700UDM-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1.14/-1.34A Power dissipation: 1.12W Case: SOT26 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair |
на замовлення 3145 шт: термін постачання 14-30 дні (днів) |
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DMC4029SK4-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 6.7/-4.9A Power dissipation: 1.6W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 0.032/0.055Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 2350 шт: термін постачання 14-30 дні (днів) |
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DMC2038LVT-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 3.1/-4.5A Power dissipation: 1.1W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.035/0.074Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 2384 шт: термін постачання 14-30 дні (днів) |
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DMC3025LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.5/-8.5A On-state resistance: 0.02/0.045Ω Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 2114 шт: термін постачання 14-30 дні (днів) |
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DMC3400SDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 0.5/-0.36A Power dissipation: 0.39W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.4/0.9Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair |
на замовлення 1409 шт: термін постачання 14-30 дні (днів) |
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SMBJ45A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 50...57.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52C2V4S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 2.4V; SMD; SOD323; reel,tape; single diode Mounting: SMD Kind of package: reel; tape Case: SOD323 Type of diode: Zener Power dissipation: 0.2W Tolerance: ±8% Zener voltage: 2.4V Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMP6350S-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23 Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Drain-source voltage: -60V Pulsed drain current: -6A Drain current: -1.2A On-state resistance: 0.35Ω Power dissipation: 0.72W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
на замовлення 1465 шт: термін постачання 14-30 дні (днів) |
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AP130-15RG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; SC59R; SMD Kind of package: reel; tape Case: SC59R Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Output current: 0.3A Voltage drop: 0.5V Number of channels: 1 Output voltage: 1.5V Tolerance: ±2% Input voltage: 2.7...5.5V Kind of voltage regulator: fixed; LDO; linear |
на замовлення 2634 шт: термін постачання 14-30 дні (днів) |
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AP7313-33SRG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23R; SMD Manufacturer series: AP7313 Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Case: SOT23R Output current: 0.15A Voltage drop: 0.3V Number of channels: 1 Tolerance: ±2% Input voltage: 2...6V Output voltage: 3.3V Kind of package: reel; tape |
на замовлення 1976 шт: термін постачання 14-30 дні (днів) |
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| AL3353S-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; boost; LED driver; SO8; Ch: 1; 9÷40VDC Topology: boost Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: LED driver Kind of package: reel; tape Case: SO8 Operating temperature: -40...105°C Number of channels: 1 Operating voltage: 9...40V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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AP7313-25SAG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD Manufacturer series: AP7313 Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Case: SOT23 Output current: 0.15A Voltage drop: 0.3V Number of channels: 1 Tolerance: ±2% Input voltage: 2...6V Output voltage: 2.5V Kind of package: reel; tape |
на замовлення 2700 шт: термін постачання 14-30 дні (днів) |
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AP7313-33SAG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD Manufacturer series: AP7313 Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Case: SOT23 Output current: 0.15A Voltage drop: 0.3V Number of channels: 1 Tolerance: ±2% Input voltage: 2...6V Output voltage: 3.3V Kind of package: reel; tape |
на замовлення 61 шт: термін постачання 14-30 дні (днів) |
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DMN6075S-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.5A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 1161 шт: термін постачання 14-30 дні (днів) |
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ZXMN6A07FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 6.9A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.1A Pulsed drain current: 6.9A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 1.65nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2998 шт: термін постачання 14-30 дні (днів) |
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DMN62D0U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.38W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 3124 шт: термін постачання 14-30 дні (днів) |
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SMCJ26A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 35.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1303 шт: термін постачання 14-30 дні (днів) |
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SMBJ22A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMBJ22AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMAJ20CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 986 шт: термін постачання 14-30 дні (днів) |
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| SMAJ20CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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AP5100WG-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷24VDC; Uout: 0.81÷15VDC; 1.2A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...24V DC Output voltage: 0.81...15V DC Output current: 1.2A Case: SOT26 Mounting: SMD Frequency: 1.4MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 90% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ15A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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SMAJ14A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1341 шт: термін постачання 14-30 дні (днів) |
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SMBJ13CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 27.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1140 шт: термін постачання 14-30 дні (днів) |
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SMAJ13CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMG9933USD-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -20A Drain current: -3A Gate charge: 6.5nC On-state resistance: 0.11Ω Power dissipation: 1.15W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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DMP3056LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.1A On-state resistance: 65mΩ Power dissipation: 2.5W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 1121 шт: термін постачання 14-30 дні (днів) |
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DMP3085LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -30V Drain current: -3.1A On-state resistance: 70mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 208 шт: термін постачання 14-30 дні (днів) |
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DMC4040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 7.3/-7.5A On-state resistance: 0.04/0.045Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 603 шт: термін постачання 14-30 дні (днів) |
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DMHC3025LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6/-4.2A Gate charge: 11.7/11.4nC On-state resistance: 25/50mΩ Power dissipation: 1.5W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 2493 шт: термін постачання 14-30 дні (днів) |
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DMN6040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A On-state resistance: 55mΩ Power dissipation: 0.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 324 шт: термін постачання 14-30 дні (днів) |
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DMG4800LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.4A On-state resistance: 22mΩ Power dissipation: 1.5W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape |
на замовлення 598 шт: термін постачання 14-30 дні (днів) |
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DMP2040USD-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -20V Drain current: -5A Gate charge: 19nC On-state resistance: 52mΩ Power dissipation: 1.6W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
на замовлення 2485 шт: термін постачання 14-30 дні (днів) |
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DMP6050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -32A Drain current: -3.9A On-state resistance: 55mΩ Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 1217 шт: термін постачання 14-30 дні (днів) |
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DMC4050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 5.8/-5.5A On-state resistance: 45/45mΩ Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 82 шт: термін постачання 14-30 дні (днів) |
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| FMMT458QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Current gain: 15...300
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Current gain: 15...300
Pulsed collector current: 1A
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В кошику
од. на суму грн.
| SMBJ7.5CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1650 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.79 грн |
| 32+ | 13.37 грн |
| 35+ | 12.27 грн |
| 100+ | 9.40 грн |
| 500+ | 7.62 грн |
| BAT54TW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику
од. на суму грн.
| BAT54TWQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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В кошику
од. на суму грн.
| BAS40TWQ-7-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| AP1507-D5-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 1.23÷18VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...22V DC
Output voltage: 1.23...18V DC
Output current: 3A
Case: TO252-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 74%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 1.23÷18VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...22V DC
Output voltage: 1.23...18V DC
Output current: 3A
Case: TO252-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 74%
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5248B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 3155 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.20 грн |
| 66+ | 6.43 грн |
| 77+ | 5.50 грн |
| 122+ | 3.47 грн |
| 149+ | 2.85 грн |
| 500+ | 2.01 грн |
| 1000+ | 1.83 грн |
| 1500+ | 1.75 грн |
| 3000+ | 1.66 грн |
| MMSZ5248BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 3367 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.85 грн |
| 50+ | 8.63 грн |
| 55+ | 7.70 грн |
| 100+ | 5.37 грн |
| 500+ | 4.32 грн |
| 1000+ | 3.75 грн |
| 3000+ | 3.13 грн |
| MMSZ5248BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| B260AE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Leakage current: 14.5mA
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Leakage current: 14.5mA
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 2178 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.59 грн |
| 46+ | 9.31 грн |
| 100+ | 6.26 грн |
| 500+ | 5.42 грн |
| B290-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 90V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.69V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 90V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.69V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 2770 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.12 грн |
| 53+ | 8.04 грн |
| 100+ | 7.45 грн |
| 500+ | 7.11 грн |
| 1000+ | 6.43 грн |
| AZ23C4V7-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
на замовлення 147 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.23 грн |
| 34+ | 12.70 грн |
| 47+ | 9.06 грн |
| AZ23C4V3-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Tolerance: ±5%
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Tolerance: ±5%
Semiconductor structure: common anode; double
на замовлення 39 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.00 грн |
| AP9211SA-AL-HAC-7 |
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Виробник: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Integrated circuit features: MOSFET; shutdown input
Mounting: SMD
Number of rechargeable batteries: 1 x Li+
Case: U-DFN2030-6
Supply voltage: 1.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Integrated circuit features: MOSFET; shutdown input
Mounting: SMD
Number of rechargeable batteries: 1 x Li+
Case: U-DFN2030-6
Supply voltage: 1.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.46 грн |
| 25+ | 37.08 грн |
| 100+ | 32.76 грн |
| 500+ | 32.34 грн |
| KBJ406G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 23 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.16 грн |
| 10+ | 44.53 грн |
| 20+ | 40.04 грн |
| B190-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
на замовлення 1138 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.76 грн |
| 49+ | 8.72 грн |
| 100+ | 7.19 грн |
| 500+ | 6.19 грн |
| B190B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
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| B190Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
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| B190BQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
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| SB190-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 90V; 1A; DO41; Ufmax: 0.8V; reel
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: DO41
Kind of package: reel
Max. forward voltage: 0.8V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 90V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 90V; 1A; DO41; Ufmax: 0.8V; reel
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: DO41
Kind of package: reel
Max. forward voltage: 0.8V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 90V
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| BZX84C11-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±5.5%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±5.5%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.24 грн |
| BZX84C11T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 11V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 11V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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| DMMT3904W-13-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Current gain: 30...300
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Current gain: 30...300
Quantity in set/package: 10000pcs.
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| DMMT3904WQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Current gain: 30...300
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Current gain: 30...300
Quantity in set/package: 3000pcs.
Application: automotive industry
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| DMC2700UDM-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
на замовлення 3145 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.70 грн |
| 39+ | 11.09 грн |
| 72+ | 5.89 грн |
| 100+ | 5.14 грн |
| 250+ | 4.76 грн |
| 500+ | 4.58 грн |
| 1000+ | 4.55 грн |
| DMC4029SK4-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.7/-4.9A
Power dissipation: 1.6W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.032/0.055Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.7/-4.9A
Power dissipation: 1.6W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.032/0.055Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 2350 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.64 грн |
| 10+ | 44.70 грн |
| 50+ | 30.81 грн |
| 100+ | 26.24 грн |
| 500+ | 18.96 грн |
| 1000+ | 17.78 грн |
| DMC2038LVT-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 2384 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.88 грн |
| 27+ | 15.75 грн |
| 50+ | 10.92 грн |
| 100+ | 9.31 грн |
| 500+ | 6.77 грн |
| 1000+ | 5.93 грн |
| DMC3025LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
On-state resistance: 0.02/0.045Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
On-state resistance: 0.02/0.045Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 2114 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.40 грн |
| 14+ | 32.00 грн |
| 100+ | 18.96 грн |
| 500+ | 13.54 грн |
| 1000+ | 12.02 грн |
| DMC3400SDW-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
Power dissipation: 0.39W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.4/0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
Power dissipation: 0.39W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.4/0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
на замовлення 1409 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.41 грн |
| 37+ | 11.68 грн |
| 42+ | 10.24 грн |
| 100+ | 6.48 грн |
| 500+ | 4.49 грн |
| 1000+ | 3.84 грн |
| SMBJ45A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| BZT52C2V4S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; SOD323; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±8%
Zener voltage: 2.4V
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; SOD323; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±8%
Zener voltage: 2.4V
Semiconductor structure: single diode
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| DMP6350S-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Pulsed drain current: -6A
Drain current: -1.2A
On-state resistance: 0.35Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Pulsed drain current: -6A
Drain current: -1.2A
On-state resistance: 0.35Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 1465 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.76 грн |
| 15+ | 29.29 грн |
| 50+ | 20.32 грн |
| 100+ | 17.35 грн |
| 500+ | 12.36 грн |
| 1000+ | 11.85 грн |
| AP130-15RG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; SC59R; SMD
Kind of package: reel; tape
Case: SC59R
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.5V
Number of channels: 1
Output voltage: 1.5V
Tolerance: ±2%
Input voltage: 2.7...5.5V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; SC59R; SMD
Kind of package: reel; tape
Case: SC59R
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.5V
Number of channels: 1
Output voltage: 1.5V
Tolerance: ±2%
Input voltage: 2.7...5.5V
Kind of voltage regulator: fixed; LDO; linear
на замовлення 2634 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 26+ | 17.59 грн |
| 31+ | 13.71 грн |
| 100+ | 12.02 грн |
| 500+ | 11.34 грн |
| AP7313-33SRG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23R; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: SOT23R
Output current: 0.15A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Output voltage: 3.3V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23R; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: SOT23R
Output current: 0.15A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Output voltage: 3.3V
Kind of package: reel; tape
на замовлення 1976 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.50 грн |
| 37+ | 11.51 грн |
| 42+ | 10.16 грн |
| 50+ | 8.63 грн |
| 100+ | 7.20 грн |
| 250+ | 6.52 грн |
| 500+ | 6.26 грн |
| AL3353S-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; boost; LED driver; SO8; Ch: 1; 9÷40VDC
Topology: boost
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...105°C
Number of channels: 1
Operating voltage: 9...40V DC
Category: LED drivers
Description: IC: driver; boost; LED driver; SO8; Ch: 1; 9÷40VDC
Topology: boost
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...105°C
Number of channels: 1
Operating voltage: 9...40V DC
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| AP7313-25SAG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: SOT23
Output current: 0.15A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Output voltage: 2.5V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: SOT23
Output current: 0.15A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Output voltage: 2.5V
Kind of package: reel; tape
на замовлення 2700 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.41 грн |
| 33+ | 12.87 грн |
| 38+ | 11.34 грн |
| 44+ | 9.82 грн |
| 100+ | 8.04 грн |
| 250+ | 7.36 грн |
| 500+ | 7.03 грн |
| AP7313-33SAG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: SOT23
Output current: 0.15A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Output voltage: 3.3V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: SOT23
Output current: 0.15A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Output voltage: 3.3V
Kind of package: reel; tape
на замовлення 61 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.50 грн |
| 37+ | 11.51 грн |
| 42+ | 10.16 грн |
| 50+ | 8.63 грн |
| DMN6075S-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 1161 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.70 грн |
| 37+ | 11.51 грн |
| 64+ | 6.64 грн |
| 100+ | 5.88 грн |
| 500+ | 4.83 грн |
| 1000+ | 4.39 грн |
| ZXMN6A07FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 6.9A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 6.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 6.9A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 6.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2998 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.32 грн |
| 14+ | 31.57 грн |
| 50+ | 21.84 грн |
| 100+ | 18.62 грн |
| 500+ | 13.46 грн |
| 1000+ | 12.02 грн |
| DMN62D0U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3124 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 10.03 грн |
| 59+ | 7.20 грн |
| 100+ | 5.20 грн |
| 500+ | 4.49 грн |
| 1000+ | 3.89 грн |
| 3000+ | 3.15 грн |
| SMCJ26A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1303 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.87 грн |
| 11+ | 40.63 грн |
| 12+ | 35.89 грн |
| 100+ | 22.77 грн |
| 500+ | 16.59 грн |
| 1000+ | 14.56 грн |
| SMBJ22A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| SMBJ22AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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В кошику
од. на суму грн.
| SMAJ20CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 986 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 19.14 грн |
| 29+ | 15.07 грн |
| 40+ | 10.75 грн |
| 500+ | 4.77 грн |
| SMAJ20CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
од. на суму грн.
| AP5100WG-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷24VDC; Uout: 0.81÷15VDC; 1.2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...24V DC
Output voltage: 0.81...15V DC
Output current: 1.2A
Case: SOT26
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 90%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷24VDC; Uout: 0.81÷15VDC; 1.2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...24V DC
Output voltage: 0.81...15V DC
Output current: 1.2A
Case: SOT26
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 90%
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В кошику
од. на суму грн.
| SMAJ15A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 47 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.76 грн |
| 46+ | 9.31 грн |
| SMAJ14A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1341 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.32 грн |
| 31+ | 13.88 грн |
| 38+ | 11.34 грн |
| SMBJ13CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1140 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.88 грн |
| 25+ | 17.10 грн |
| 29+ | 15.07 грн |
| 100+ | 9.40 грн |
| 500+ | 6.77 грн |
| SMAJ13CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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од. на суму грн.
| DMG9933USD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.76 грн |
| 15+ | 29.54 грн |
| 100+ | 17.52 грн |
| 500+ | 12.44 грн |
| 1000+ | 11.00 грн |
| DMP3056LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
On-state resistance: 65mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
On-state resistance: 65mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 1121 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.20 грн |
| 11+ | 40.80 грн |
| 100+ | 26.75 грн |
| 500+ | 20.65 грн |
| 650+ | 19.89 грн |
| 1000+ | 18.71 грн |
| DMP3085LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 208 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.91 грн |
| 21+ | 20.65 грн |
| 50+ | 14.39 грн |
| 100+ | 12.36 грн |
| DMC4040SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.3/-7.5A
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.3/-7.5A
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 603 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.46 грн |
| 11+ | 42.07 грн |
| 100+ | 30.73 грн |
| 500+ | 25.65 грн |
| DMHC3025LSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.2A
Gate charge: 11.7/11.4nC
On-state resistance: 25/50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.2A
Gate charge: 11.7/11.4nC
On-state resistance: 25/50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 2493 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.87 грн |
| 10+ | 53.67 грн |
| 50+ | 38.52 грн |
| 100+ | 33.69 грн |
| 250+ | 28.61 грн |
| 500+ | 27.51 грн |
| DMN6040SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 324 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.40 грн |
| 18+ | 24.55 грн |
| 50+ | 18.28 грн |
| 100+ | 17.10 грн |
| 250+ | 16.34 грн |
| DMG4800LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
On-state resistance: 22mΩ
Power dissipation: 1.5W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
On-state resistance: 22mΩ
Power dissipation: 1.5W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
на замовлення 598 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.70 грн |
| 10+ | 45.37 грн |
| 11+ | 40.89 грн |
| 50+ | 27.00 грн |
| 100+ | 21.92 грн |
| 500+ | 14.56 грн |
| DMP2040USD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -20V
Drain current: -5A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -20V
Drain current: -5A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
на замовлення 2485 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.40 грн |
| 13+ | 34.20 грн |
| 15+ | 29.80 грн |
| 100+ | 18.28 грн |
| 500+ | 13.12 грн |
| 1000+ | 11.51 грн |
| DMP6050SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -32A
Drain current: -3.9A
On-state resistance: 55mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -32A
Drain current: -3.9A
On-state resistance: 55mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 1217 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.70 грн |
| 11+ | 40.63 грн |
| 25+ | 36.23 грн |
| 100+ | 30.22 грн |
| 500+ | 24.46 грн |
| 1000+ | 24.38 грн |
| DMC4050SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.5A
On-state resistance: 45/45mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.5A
On-state resistance: 45/45mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 82 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.37 грн |
| 11+ | 39.45 грн |
























