Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74565) > Сторінка 1205 з 1243
Фото | Назва | Виробник | Інформація |
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AZ1084CD-5.0TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 5A; DPAK; SMD; 0÷125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.5V Output voltage: 5V Output current: 5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...10V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MMBT3906Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ADTC114EUAQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 30 Application: automotive industry Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ5248BS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 3914 шт: термін постачання 21-30 дні (днів) |
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MMSZ5248B-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 675 шт: термін постачання 21-30 дні (днів) |
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MMSZ5248BQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV70DW-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double x2 Case: SOT363 Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 2998 шт: термін постачання 21-30 дні (днів) |
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SMCJ33A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCX51TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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BCX5116TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 100...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DF005S-T | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
74LVC1G14QW5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC Number of inputs: 1 Kind of integrated circuit: inverter Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
74LVC1G14QSE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC Number of inputs: 1 Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMAJ45CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape Case: SMA Semiconductor structure: bidirectional Mounting: SMD Features of semiconductor devices: glass passivated Type of diode: TVS Leakage current: 5µA Max. forward impulse current: 5.5A Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Peak pulse power dissipation: 0.4kW Kind of package: reel; tape |
на замовлення 7485 шт: термін постачання 21-30 дні (днів) |
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1N5406G-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 600V; 3A; reel,tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Capacitance: 40pF Reverse recovery time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
AP64102QSP-13 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 1A; SO8-EP Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...125°C Output voltage: 0.8...40V DC Input voltage: 3.8...40V DC Output current: 1A Efficiency: 88% Frequency: 100kHz...2.2MHz Application: automotive industry Topology: buck |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ADA114EUQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ Application: automotive industry Case: SOT363 Polarisation: bipolar Kind of transistor: BRT Kind of package: reel; tape Type of transistor: PNP x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.27W Current gain: 30 Collector-emitter voltage: 50V Base resistor: 10kΩ Quantity in set/package: 10000pcs. Base-emitter resistor: 10kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ADA114YUQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ Application: automotive industry Case: SOT363 Polarisation: bipolar Kind of transistor: BRT Kind of package: reel; tape Type of transistor: PNP x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.27W Collector-emitter voltage: 50V Base resistor: 10kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 47kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCR421UW6Q-7 | DIODES INCORPORATED |
![]() Description: IC: driver; single transistor; current regulator,LED driver Case: SOT26 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...150°C Output current: 10...350mA Number of channels: 1 Operating voltage: 1.4...40V DC Kind of integrated circuit: current regulator; LED driver Application: automotive industry Topology: single transistor Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM |
на замовлення 3079 шт: термін постачання 21-30 дні (днів) |
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DMN3033LDM-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Power dissipation: 2W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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ZXMP10A17E6TA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -1.3A; 1.1W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -1.3A Power dissipation: 1.1W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2985 шт: термін постачання 21-30 дні (днів) |
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APX825A-46W6G-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); SOT26 Case: SOT26 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C DC supply current: 30µA Maximum output current: 20mA Delay time: 200ms Supply voltage: 1.1...5.5V DC Threshold on-voltage: 4.63V Kind of integrated circuit: power on reset monitor (PoR) Type of integrated circuit: supervisor circuit Active logical level: high; low Integrated circuit features: manual reset; watchdog |
на замовлення 370 шт: термін постачання 21-30 дні (днів) |
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ZXM62P03E6TA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.625W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.625W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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ZMR500FTA | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 50mA Case: SOT23 Mounting: SMD Manufacturer series: ZMR Kind of package: reel; tape Operating temperature: -50...125°C Number of channels: 1 Input voltage: 7...25V Voltage drop: 0.005V |
на замовлення 1582 шт: термін постачання 21-30 дні (днів) |
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AP22817BKBWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25 Operating temperature: -40...85°C Kind of package: reel; tape Mounting: SMD On-state resistance: 95mΩ Number of channels: 1 Output current: 1.5A Supply voltage: 2.7...5.5V DC Case: TSOT25 Kind of integrated circuit: high-side; USB switch Active logical level: low Type of integrated circuit: power switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
AP22817BKEWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25 Operating temperature: -40...85°C Kind of package: reel; tape Mounting: SMD On-state resistance: 95mΩ Number of channels: 1 Output current: 1.5A Supply voltage: 2.7...5.5V DC Case: TSOT25 Kind of integrated circuit: high-side; USB switch Active logical level: low Type of integrated circuit: power switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
1N4448HWSQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 3.5pF Case: SOD323 Max. forward voltage: 0.72V Max. load current: 0.5A Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
1N4448WSFQ-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323F; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 4pF Case: SOD323F Max. forward voltage: 0.62V Max. load current: 0.5A Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
1N4448WSQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 4pF Case: SOD323 Max. forward voltage: 0.62V Max. load current: 0.5A Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ADTC144EUAQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry Quantity in set/package: 10000pcs. |
на замовлення 7140 шт: термін постачання 21-30 дні (днів) |
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DMN10H220L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23 Mounting: SMD Case: SOT23 On-state resistance: 0.22Ω Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.3W Drain current: 1.3A Pulsed drain current: 8A Gate-source voltage: ±16V Drain-source voltage: 100V |
на замовлення 2532 шт: термін постачання 21-30 дні (днів) |
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DMN10H220LQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23 Mounting: SMD Case: SOT23 On-state resistance: 0.25Ω Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.3W Drain current: 1.3A Gate-source voltage: ±16V Drain-source voltage: 100V Application: automotive industry |
на замовлення 1088 шт: термін постачання 21-30 дні (днів) |
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1N4933-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns Case: DO41 Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Capacitance: 15pF Reverse recovery time: 200ns Load current: 1A Max. forward voltage: 1.2V Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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APX803L20-32SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23 Mounting: SMD Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: power on reset monitor (PoR) Kind of package: reel; tape Case: SOT23 Type of integrated circuit: supervisor circuit Operating temperature: -40...85°C DC supply current: 1µA Maximum output current: 20mA Delay time: 220ms Supply voltage: 0.9...5.5V DC Threshold on-voltage: 3.2V Integrated circuit features: ±1,5% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
ADTA144ECAQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 Application: automotive industry Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ADTA144EUAQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 Application: automotive industry Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ABS10B-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A Max. forward impulse current: 50A Max. off-state voltage: 1kV Case: SOPA4 Features of semiconductor devices: glass passivated Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1.5A Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ABS10M-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4 Max. forward impulse current: 24A Max. off-state voltage: 1kV Case: SOPA4 Features of semiconductor devices: glass passivated Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 0.95V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KBJ406G | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A Max. off-state voltage: 0.6kV Load current: 4A Case: KBJ Features of semiconductor devices: glass passivated Kind of package: tube Type of bridge rectifier: single-phase Max. forward impulse current: 120A Electrical mounting: THT Leads: flat pin Version: flat |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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GBJ2506-F | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A Max. off-state voltage: 0.6kV Load current: 25A Case: GBJ Features of semiconductor devices: glass passivated Kind of package: tube Type of bridge rectifier: single-phase Max. forward impulse current: 350A Electrical mounting: THT Leads: flat pin Version: flat |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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KBJ408G | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A Max. off-state voltage: 0.8kV Load current: 4A Case: KBJ Features of semiconductor devices: glass passivated Kind of package: tube Type of bridge rectifier: single-phase Max. forward impulse current: 120A Electrical mounting: THT Leads: flat pin Version: flat |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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1N4148WS-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
1N4148WSQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMBJ8.0CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8V Breakdown voltage: 8.89...10.23V Max. forward impulse current: 44.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
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SMCJ12A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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AP2127K-3.0TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3V Output current: 0.4A Case: SOT23-5 Mounting: SMD Manufacturer series: AP2127 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
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DDZ5V6B-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 50nA |
на замовлення 3574 шт: термін постачання 21-30 дні (днів) |
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UDZ5V6B-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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AZ23C5V6-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.3W Zener voltage: 5.6V Semiconductor structure: common anode; double Type of diode: Zener |
на замовлення 1127 шт: термін постачання 21-30 дні (днів) |
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AP2171DWG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT25 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC On-state resistance: 95mΩ Active logical level: high |
на замовлення 2969 шт: термін постачання 21-30 дні (днів) |
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ZVN4525GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.31A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±40V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.44A |
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D3V3S1U2LP1610-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 3.8V; 200A; unidirectional; 0201,0603; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Max. off-state voltage: 3.3V Breakdown voltage: 3.8V Max. forward impulse current: 200A Case: 0201; 0603 |
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D5V0M5B6LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 5.5V; 12A; U-DFN1616-6; Ch: 5; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Capacitance: 40pF Leakage current: 0.1µA Max. off-state voltage: 5V Breakdown voltage: 5.5V Number of channels: 5 Max. forward impulse current: 12A Case: U-DFN1616-6 |
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В кошику од. на суму грн. | ||||||||||||||||||
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DMP1045U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
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В кошику од. на суму грн. | ||||||||||||||||||
1N5407G-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Capacitance: 40pF Reverse recovery time: 2µs |
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В кошику од. на суму грн. | |||||||||||||||||||
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SMBJ100A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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AP61302QZ6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Frequency: 2.2MHz Mounting: SMD Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Kind of package: reel; tape Operating temperature: -40...85°C Output current: 3A Output voltage: 0.6...5.5V DC Input voltage: 2.4...5.5V DC Case: SOT563 Efficiency: 84% Application: automotive industry Topology: buck |
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В кошику од. на суму грн. | |||||||||||||||||||
1N5401G-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Capacitance: 40pF Reverse recovery time: 2µs |
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В кошику од. на суму грн. | |||||||||||||||||||
DDTC123YE-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 33 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Frequency: 250MHz |
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DDTC123YUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 33 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Frequency: 250MHz |
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В кошику од. на суму грн. |
AZ1084CD-5.0TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 5A; DPAK; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 5V
Output current: 5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 5A; DPAK; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 5V
Output current: 5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...10V
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MMBT3906Q-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
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ADTC114EUAQ-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Application: automotive industry
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Application: automotive industry
Quantity in set/package: 10000pcs.
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MMSZ5248BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 3914 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
44+ | 9.03 грн |
52+ | 7.76 грн |
100+ | 4.01 грн |
500+ | 2.75 грн |
537+ | 1.74 грн |
1476+ | 1.65 грн |
MMSZ5248B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 675 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
70+ | 5.70 грн |
106+ | 3.77 грн |
126+ | 3.15 грн |
500+ | 2.21 грн |
MMSZ5248BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BAV70DW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2998 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.94 грн |
43+ | 9.34 грн |
47+ | 8.47 грн |
100+ | 6.00 грн |
422+ | 2.22 грн |
1159+ | 2.10 грн |
SMCJ33A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BCX51TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.99 грн |
21+ | 18.92 грн |
BCX5116TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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DF005S-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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74LVC1G14QW5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of integrated circuit: inverter
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of integrated circuit: inverter
Kind of output: push-pull
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74LVC1G14QSE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of output: push-pull
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SMAJ45CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape
Case: SMA
Semiconductor structure: bidirectional
Mounting: SMD
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 5µA
Max. forward impulse current: 5.5A
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Peak pulse power dissipation: 0.4kW
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape
Case: SMA
Semiconductor structure: bidirectional
Mounting: SMD
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 5µA
Max. forward impulse current: 5.5A
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Peak pulse power dissipation: 0.4kW
Kind of package: reel; tape
на замовлення 7485 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
48+ | 8.39 грн |
56+ | 7.13 грн |
100+ | 4.83 грн |
199+ | 4.67 грн |
547+ | 4.43 грн |
5000+ | 4.35 грн |
1N5406G-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
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AP64102QSP-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 1A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output voltage: 0.8...40V DC
Input voltage: 3.8...40V DC
Output current: 1A
Efficiency: 88%
Frequency: 100kHz...2.2MHz
Application: automotive industry
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 1A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output voltage: 0.8...40V DC
Input voltage: 3.8...40V DC
Output current: 1A
Efficiency: 88%
Frequency: 100kHz...2.2MHz
Application: automotive industry
Topology: buck
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ADA114EUQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 10000pcs.
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 10000pcs.
Base-emitter resistor: 10kΩ
Frequency: 250MHz
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ADA114YUQ-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
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BCR421UW6Q-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Kind of integrated circuit: current regulator; LED driver
Application: automotive industry
Topology: single transistor
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Kind of integrated circuit: current regulator; LED driver
Application: automotive industry
Topology: single transistor
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
на замовлення 3079 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.28 грн |
20+ | 20.11 грн |
23+ | 17.81 грн |
26+ | 15.28 грн |
50+ | 13.78 грн |
91+ | 10.37 грн |
249+ | 9.82 грн |
DMN3033LDM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 2W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 2W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 58 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
14+ | 29.69 грн |
ZXMP10A17E6TA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.3A; 1.1W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1.3A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.3A; 1.1W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1.3A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2985 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.80 грн |
10+ | 47.74 грн |
37+ | 25.26 грн |
102+ | 23.91 грн |
500+ | 23.28 грн |
1000+ | 22.96 грн |
APX825A-46W6G-7 |
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
Kind of integrated circuit: power on reset monitor (PoR)
Type of integrated circuit: supervisor circuit
Active logical level: high; low
Integrated circuit features: manual reset; watchdog
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
Kind of integrated circuit: power on reset monitor (PoR)
Type of integrated circuit: supervisor circuit
Active logical level: high; low
Integrated circuit features: manual reset; watchdog
на замовлення 370 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.28 грн |
19+ | 21.22 грн |
22+ | 18.76 грн |
25+ | 15.99 грн |
79+ | 11.88 грн |
216+ | 11.24 грн |
ZXM62P03E6TA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.625W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.625W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.625W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.625W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 795 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 52.86 грн |
10+ | 42.36 грн |
39+ | 24.07 грн |
107+ | 22.72 грн |
ZMR500FTA |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Input voltage: 7...25V
Voltage drop: 0.005V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Input voltage: 7...25V
Voltage drop: 0.005V
на замовлення 1582 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.81 грн |
17+ | 23.83 грн |
25+ | 22.17 грн |
59+ | 15.83 грн |
162+ | 14.96 грн |
AP22817BKBWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Supply voltage: 2.7...5.5V DC
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Supply voltage: 2.7...5.5V DC
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Type of integrated circuit: power switch
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AP22817BKEWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Supply voltage: 2.7...5.5V DC
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Supply voltage: 2.7...5.5V DC
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Type of integrated circuit: power switch
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1N4448HWSQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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1N4448WSFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323F; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD323F
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323F; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD323F
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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1N4448WSQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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ADTC144EUAQ-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
на замовлення 7140 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
155+ | 2.81 грн |
210+ | 1.92 грн |
500+ | 1.69 грн |
560+ | 1.67 грн |
1540+ | 1.58 грн |
2500+ | 1.52 грн |
DMN10H220L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 0.22Ω
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.3W
Drain current: 1.3A
Pulsed drain current: 8A
Gate-source voltage: ±16V
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 0.22Ω
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.3W
Drain current: 1.3A
Pulsed drain current: 8A
Gate-source voltage: ±16V
Drain-source voltage: 100V
на замовлення 2532 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
23+ | 17.66 грн |
50+ | 15.20 грн |
100+ | 14.17 грн |
128+ | 7.28 грн |
350+ | 6.89 грн |
DMN10H220LQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 0.25Ω
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.3W
Drain current: 1.3A
Gate-source voltage: ±16V
Drain-source voltage: 100V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
On-state resistance: 0.25Ω
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.3W
Drain current: 1.3A
Gate-source voltage: ±16V
Drain-source voltage: 100V
Application: automotive industry
на замовлення 1088 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.73 грн |
22+ | 18.84 грн |
25+ | 16.15 грн |
100+ | 8.63 грн |
159+ | 5.86 грн |
435+ | 5.54 грн |
1000+ | 5.38 грн |
1N4933-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Case: DO41
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 15pF
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Case: DO41
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 15pF
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
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од. на суму грн.
APX803L20-32SA-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.2V
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.2V
Integrated circuit features: ±1,5% accuracy
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ADTA144ECAQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
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ADTA144EUAQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
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ABS10B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Case: SOPA4
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Case: SOPA4
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
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ABS10M-13 |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4
Max. forward impulse current: 24A
Max. off-state voltage: 1kV
Case: SOPA4
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4
Max. forward impulse current: 24A
Max. off-state voltage: 1kV
Case: SOPA4
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
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KBJ406G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Max. off-state voltage: 0.6kV
Load current: 4A
Case: KBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Electrical mounting: THT
Leads: flat pin
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Max. off-state voltage: 0.6kV
Load current: 4A
Case: KBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Electrical mounting: THT
Leads: flat pin
Version: flat
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 92.94 грн |
10+ | 58.75 грн |
20+ | 51.86 грн |
28+ | 33.73 грн |
GBJ2506-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Max. off-state voltage: 0.6kV
Load current: 25A
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward impulse current: 350A
Electrical mounting: THT
Leads: flat pin
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Max. off-state voltage: 0.6kV
Load current: 25A
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward impulse current: 350A
Electrical mounting: THT
Leads: flat pin
Version: flat
на замовлення 75 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 116.81 грн |
10+ | 76.00 грн |
15+ | 71.25 грн |
19+ | 49.88 грн |
51+ | 47.50 грн |
KBJ408G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Max. off-state voltage: 0.8kV
Load current: 4A
Case: KBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Electrical mounting: THT
Leads: flat pin
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Max. off-state voltage: 0.8kV
Load current: 4A
Case: KBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Electrical mounting: THT
Leads: flat pin
Version: flat
на замовлення 120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 89.52 грн |
10+ | 57.64 грн |
20+ | 52.17 грн |
24+ | 39.19 грн |
66+ | 37.05 грн |
1N4148WS-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
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1N4148WSQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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SMBJ8.0CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 44.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 44.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ12A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AP2127K-3.0TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2127
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2127
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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DDZ5V6B-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 3574 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.53 грн |
55+ | 7.28 грн |
63+ | 6.33 грн |
78+ | 5.13 грн |
109+ | 3.66 грн |
500+ | 2.52 грн |
527+ | 1.77 грн |
1448+ | 1.67 грн |
UDZ5V6B-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.23 грн |
59+ | 6.73 грн |
67+ | 5.98 грн |
100+ | 4.61 грн |
398+ | 2.34 грн |
1095+ | 2.21 грн |
AZ23C5V6-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 5.6V
Semiconductor structure: common anode; double
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 5.6V
Semiconductor structure: common anode; double
Type of diode: Zener
на замовлення 1127 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
63+ | 6.33 грн |
69+ | 5.78 грн |
86+ | 4.66 грн |
100+ | 4.22 грн |
331+ | 2.83 грн |
908+ | 2.68 грн |
AP2171DWG-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: high
на замовлення 2969 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.87 грн |
23+ | 17.58 грн |
26+ | 15.68 грн |
30+ | 13.38 грн |
95+ | 9.82 грн |
250+ | 9.74 грн |
260+ | 9.26 грн |
500+ | 9.18 грн |
1000+ | 8.95 грн |
ZVN4525GTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.31A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.31A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.44A
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D3V3S1U2LP1610-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 200A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 200A
Case: 0201; 0603
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; 200A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Max. forward impulse current: 200A
Case: 0201; 0603
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D5V0M5B6LP16-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; 12A; U-DFN1616-6; Ch: 5; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 40pF
Leakage current: 0.1µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Number of channels: 5
Max. forward impulse current: 12A
Case: U-DFN1616-6
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; 12A; U-DFN1616-6; Ch: 5; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 40pF
Leakage current: 0.1µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Number of channels: 5
Max. forward impulse current: 12A
Case: U-DFN1616-6
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DMP1045U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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1N5407G-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
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SMBJ100A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.76 грн |
29+ | 14.09 грн |
33+ | 12.35 грн |
40+ | 10.13 грн |
100+ | 7.68 грн |
161+ | 5.78 грн |
443+ | 5.46 грн |
AP61302QZ6-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.6...5.5V DC
Input voltage: 2.4...5.5V DC
Case: SOT563
Efficiency: 84%
Application: automotive industry
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.6...5.5V DC
Input voltage: 2.4...5.5V DC
Case: SOT563
Efficiency: 84%
Application: automotive industry
Topology: buck
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1N5401G-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
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DDTC123YE-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC123YUA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.