Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72708) > Сторінка 1205 з 1212

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FMMT617TA FMMT617TA DIODES INCORPORATED FMMT617.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
на замовлення 407 шт:
термін постачання 21-30 дні (днів)
14+32.02 грн
19+22.55 грн
100+15.03 грн
150+14.12 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DDZ15CSF-7 DDZ15CSF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Semiconductor structure: single diode
на замовлення 2855 шт:
термін постачання 21-30 дні (днів)
39+11.56 грн
55+7.60 грн
63+6.61 грн
100+4.30 грн
500+3.28 грн
1000+2.94 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BAS28-7 DIODES INCORPORATED BAS28.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 4ns; SOT143; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT143
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAS28Q-13 DIODES INCORPORATED BAS28Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 4ns; SOT143; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT143
Max. forward voltage: 1.25V
Kind of package: reel; tape
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PI3CH281QE PI3CH281QE DIODES INCORPORATED PI3CH281.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; 4: 1; Ch: 2; QSOP16
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Output configuration: 4:1
Case: QSOP16
Supply voltage: 1.8...3.3V DC
Mounting: SMD
Kind of package: tube
Resistance:
Output current: 0.12A
Number of channels: 2
Bandwidth: 300MHz
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
4+120.07 грн
10+69.13 грн
Мінімальне замовлення: 4
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ZXT12N20DXTA DIODES INCORPORATED ZXT12N20DX.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 20V; 3.5A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 15A
Current gain: 40...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 112MHz
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DDA124EH-7 DIODES INCORPORATED ds30420.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 56
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
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DMP2104LP-7 DMP2104LP-7 DIODES INCORPORATED DMP2104LP-7.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Power dissipation: 0.5W
Case: DFN1411-3
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 1428 шт:
термін постачання 21-30 дні (днів)
15+30.24 грн
18+22.96 грн
26+16.35 грн
100+12.31 грн
Мінімальне замовлення: 15
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DMP2104V-7 DIODES INCORPORATED ds30942.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -4A; 0.85W; SOT563
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -4A
Power dissipation: 0.85W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DDTC143ECA-7-F DDTC143ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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DDTC143EUA-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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ADTC143ECAQ-13 DIODES INCORPORATED ADTC143ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
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ADTC143ECAQ-7 DIODES INCORPORATED ADTC143ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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DDTC143EE-7-F DIODES INCORPORATED ds30313.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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ZMR330FTA DIODES INCORPORATED ZMRSERIES.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.005V
Output voltage: 3.3V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Input voltage: 7...25V
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AL5812FF-7 AL5812FF-7 DIODES INCORPORATED AL5812.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; U-DFN3030-6; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 0.15A
Case: U-DFN3030-6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating voltage: 1...60V DC
на замовлення 2925 шт:
термін постачання 21-30 дні (днів)
10+48.03 грн
12+36.83 грн
13+33.28 грн
25+29.24 грн
100+24.53 грн
250+23.79 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
AS324AMTR-E1 DIODES INCORPORATED AS324-A.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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AS324AMTR-G1 DIODES INCORPORATED AS324-A.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 5mV; tube; IB: 0.2uA
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 5mV
Kind of package: tube
Input bias current: 0.2µA
Input offset current: 100nA
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AS324GTR-G1 DIODES INCORPORATED AS324-A.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; TSSOP14; 7mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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AP2281-3WG-7 AP2281-3WG-7 DIODES INCORPORATED AP2281-3WG-7.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: SOT26
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
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AP2281-1WG-7 AP2281-1WG-7 DIODES INCORPORATED AP2281.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: SOT26
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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AP22818AKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22817AKEWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22818AKCWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22818AKEWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP2281-1FMG-7 DIODES INCORPORATED AP2281.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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AP22816AKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22816AKEWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22816BKEWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Operating temperature: -40...85°C
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AP22817AKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22817AKBWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22818AKBWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22818AKWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22818BKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Operating temperature: -40...85°C
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AP22818BKBWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Operating temperature: -40...85°C
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AP22818BKEWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Operating temperature: -40...85°C
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AP2281-3FMG-7 DIODES INCORPORATED AP2281.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
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AP22811AM8-13 DIODES INCORPORATED AP22811.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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AP22814AM8-13 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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DZ9F22S92-7 DIODES INCORPORATED DZ9F2V7S92-DZ9F24S92.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
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SMAJ36A-13-F SMAJ36A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 4385 шт:
термін постачання 21-30 дні (днів)
28+16.01 грн
34+12.39 грн
39+10.82 грн
48+8.69 грн
100+6.18 грн
500+4.49 грн
1000+4.24 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
SMAJ36AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ36ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMAJ36ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DDTC114TCA-7-F DIODES INCORPORATED DDTC_R1-ONLY_SERIES_CA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC114TE-7-F DIODES INCORPORATED DDTC_R1-ONLY_SERIES_E.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC114TUA-7-F DDTC114TUA-7-F DIODES INCORPORATED DDTCxxxTUA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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AP2210N-3.3TRE1 AP2210N-3.3TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
на замовлення 777 шт:
термін постачання 21-30 дні (днів)
13+34.69 грн
18+23.54 грн
25+21.64 грн
100+18.66 грн
250+16.85 грн
500+15.44 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MMBZ5239B-7-F DIODES INCORPORATED MMBZ5221B-MMBZ5259B.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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MMBZ5239BTS-7-F DIODES INCORPORATED MMBZ5221-5259BTS.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
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ZTX601 DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX601B DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX603 DIODES INCORPORATED ZTX602.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX605STZ DIODES INCORPORATED ZTX604.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
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ZTX601BSTZ DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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ZTX601STZ DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...20000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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ZTX603STZ DIODES INCORPORATED ZTX602.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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DMTH4M70SPGWQ-13 DIODES INCORPORATED DMTH4M70SPGWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 460A; 5.6W; PowerDI8080-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 460A
Power dissipation: 5.6W
Case: PowerDI8080-5
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 117.1nC
Application: automotive industry
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KBP410G DIODES INCORPORATED KBP4005G%20THRU%20KBP410G%20N1918%20REV.A.pdf KBP404G-KBP410G.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 130A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DDZ9702-7 DDZ9702-7 DIODES INCORPORATED DDZ9xxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 15V
на замовлення 2554 шт:
термін постачання 21-30 дні (днів)
72+6.23 грн
136+3.06 грн
154+2.69 грн
500+2.43 грн
1000+2.35 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
FMMT617TA FMMT617.pdf
FMMT617TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
на замовлення 407 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+32.02 грн
19+22.55 грн
100+15.03 грн
150+14.12 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DDZ15CSF-7 ds31987.pdf
DDZ15CSF-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Semiconductor structure: single diode
на замовлення 2855 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.56 грн
55+7.60 грн
63+6.61 грн
100+4.30 грн
500+3.28 грн
1000+2.94 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BAS28-7 BAS28.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 4ns; SOT143; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT143
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAS28Q-13 BAS28Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 4ns; SOT143; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT143
Max. forward voltage: 1.25V
Kind of package: reel; tape
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PI3CH281QE PI3CH281.pdf
PI3CH281QE
Виробник: DIODES INCORPORATED
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; 4: 1; Ch: 2; QSOP16
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Output configuration: 4:1
Case: QSOP16
Supply voltage: 1.8...3.3V DC
Mounting: SMD
Kind of package: tube
Resistance:
Output current: 0.12A
Number of channels: 2
Bandwidth: 300MHz
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+120.07 грн
10+69.13 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ZXT12N20DXTA ZXT12N20DX.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 20V; 3.5A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 15A
Current gain: 40...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 112MHz
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DDA124EH-7 ds30420.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 56
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
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DMP2104LP-7 DMP2104LP-7.pdf
DMP2104LP-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Power dissipation: 0.5W
Case: DFN1411-3
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 1428 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+30.24 грн
18+22.96 грн
26+16.35 грн
100+12.31 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
DMP2104V-7 ds30942.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -4A; 0.85W; SOT563
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -4A
Power dissipation: 0.85W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DDTC143ECA-7-F ds30329.pdf
DDTC143ECA-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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DDTC143EUA-7-F ds30321.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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ADTC143ECAQ-13 ADTC143ECAQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
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ADTC143ECAQ-7 ADTC143ECAQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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DDTC143EE-7-F ds30313.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
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ZMR330FTA ZMRSERIES.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.005V
Output voltage: 3.3V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Input voltage: 7...25V
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AL5812FF-7 AL5812.pdf
AL5812FF-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; U-DFN3030-6; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 0.15A
Case: U-DFN3030-6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Operating voltage: 1...60V DC
на замовлення 2925 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+48.03 грн
12+36.83 грн
13+33.28 грн
25+29.24 грн
100+24.53 грн
250+23.79 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
AS324AMTR-E1 AS324-A.pdf
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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AS324AMTR-G1 AS324-A.pdf
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 5mV; tube; IB: 0.2uA
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 5mV
Kind of package: tube
Input bias current: 0.2µA
Input offset current: 100nA
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AS324GTR-G1 AS324-A.pdf
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; TSSOP14; 7mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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AP2281-3WG-7 AP2281-3WG-7.pdf
AP2281-3WG-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: SOT26
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
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AP2281-1WG-7 AP2281.pdf
AP2281-1WG-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: SOT26
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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AP22818AKAWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22817AKEWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22818AKCWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22818AKEWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP2281-1FMG-7 AP2281.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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AP22816AKAWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22816AKEWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22816BKEWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Operating temperature: -40...85°C
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AP22817AKAWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22817AKBWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22818AKBWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22818AKWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
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AP22818BKAWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Operating temperature: -40...85°C
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AP22818BKBWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Operating temperature: -40...85°C
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AP22818BKEWT-7 AP22816_17_18.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; SMD; TSOT25
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: TSOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Operating temperature: -40...85°C
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AP2281-3FMG-7 AP2281.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
Kind of output: P-Channel
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AP22811AM8-13 AP22811.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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AP22814AM8-13 AP22804-14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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DZ9F22S92-7 DZ9F2V7S92-DZ9F24S92.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
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SMAJ36A-13-F SMAJ_ser.pdf
SMAJ36A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 4385 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+16.01 грн
34+12.39 грн
39+10.82 грн
48+8.69 грн
100+6.18 грн
500+4.49 грн
1000+4.24 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
SMAJ36AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ36ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMAJ36ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DDTC114TCA-7-F DDTC_R1-ONLY_SERIES_CA.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC114TE-7-F DDTC_R1-ONLY_SERIES_E.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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DDTC114TUA-7-F DDTCxxxTUA.pdf
DDTC114TUA-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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AP2210N-3.3TRE1 AP2210.pdf
AP2210N-3.3TRE1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
на замовлення 777 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.69 грн
18+23.54 грн
25+21.64 грн
100+18.66 грн
250+16.85 грн
500+15.44 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MMBZ5239B-7-F MMBZ5221B-MMBZ5259B.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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MMBZ5239BTS-7-F MMBZ5221-5259BTS.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
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ZTX601 ZTX600.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX601B ZTX600.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX603 ZTX602.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX605STZ ZTX604.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
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ZTX601BSTZ ZTX600.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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ZTX601STZ ZTX600.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...20000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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ZTX603STZ ZTX602.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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DMTH4M70SPGWQ-13 DMTH4M70SPGWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 460A; 5.6W; PowerDI8080-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 460A
Power dissipation: 5.6W
Case: PowerDI8080-5
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 117.1nC
Application: automotive industry
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KBP410G KBP4005G%20THRU%20KBP410G%20N1918%20REV.A.pdf KBP404G-KBP410G.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 130A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DDZ9702-7 DDZ9xxx.pdf
DDZ9702-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 15V
на замовлення 2554 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.23 грн
136+3.06 грн
154+2.69 грн
500+2.43 грн
1000+2.35 грн
Мінімальне замовлення: 72
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