Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72934) > Сторінка 1206 з 1216
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BZX84B27-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 27V Mounting: SMD Tolerance: ±2% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
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| FMMT549TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 2A Current gain: 40...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100MHz |
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| FMMT549ATA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 2A Current gain: 40...500 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100MHz |
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DMNH4015SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.8A Pulsed drain current: 80A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 33nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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DMNH4015SSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.8A Pulsed drain current: 80A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 33nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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BZX84C3V9TS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SOT363 Kind of package: reel; tape Semiconductor structure: triple independent |
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BZX84C3V9W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SOT323 Kind of package: reel; tape Semiconductor structure: single diode |
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В кошику од. на суму грн. | ||||||||||||||||
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74LVC2G17DW-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Case: SOT363 Mounting: SMD Operating temperature: -40...150°C Supply voltage: 1.65...5.5V DC Family: LVC Technology: CMOS |
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| 74LVC2G17FX4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Case: X2-DFN1409-6 Mounting: SMD Operating temperature: -40...150°C Supply voltage: 1.65...5.5V DC Family: LVC Technology: CMOS |
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В кошику од. на суму грн. | |||||||||||||||||
| 74LVC2G17FW4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Case: X2-DFN1010-6 Mounting: SMD Operating temperature: -40...150°C Supply voltage: 1.65...5.5V DC Family: LVC Technology: CMOS |
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В кошику од. на суму грн. | |||||||||||||||||
| 74LVC2G17FZ4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Case: X2-DFN1410-6 Mounting: SMD Operating temperature: -40...150°C Supply voltage: 1.65...5.5V DC Family: LVC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ7.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7V Breakdown voltage: 7.78...8.95V Max. forward impulse current: 50A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAJ36CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated |
на замовлення 97 шт: термін постачання 14-30 дні (днів) |
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| SMAJ36CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74AHC1G126SE-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC Operating temperature: -40...125°C Kind of integrated circuit: buffer; non-inverting Technology: CMOS Type of integrated circuit: digital Mounting: SMD Kind of package: reel; tape Case: SOT353 Quiescent current: 40µA Supply voltage: 2...5.5V DC Number of channels: 1 Kind of output: 3-state Manufacturer series: AHC |
на замовлення 1984 шт: термін постачання 14-30 дні (днів) |
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| APX811-46UG-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); push-pull Mounting: SMD Kind of package: reel; tape Active logical level: low Integrated circuit features: manual reset Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Case: SOT143 Type of integrated circuit: supervisor circuit Operating temperature: -40...85°C DC supply current: 30µA Maximum output current: 20mA Delay time: 200ms Number of channels: 1 Supply voltage: 1.1...5.5V DC Threshold on-voltage: 4.63V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84B11-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode Kind of package: reel; tape Case: SOT23 Type of diode: Zener Power dissipation: 0.35W Tolerance: ±2% Zener voltage: 11V Semiconductor structure: single diode Mounting: SMD |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| APX803L20-23SA-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); SOT23 Mounting: SMD Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: power on reset monitor (PoR) Kind of package: reel; tape Case: SOT23 Type of integrated circuit: supervisor circuit Operating temperature: -40...85°C DC supply current: 1µA Maximum output current: 20mA Delay time: 220ms Supply voltage: 0.9...5.5V DC Number of channels: 1 Threshold on-voltage: 2.3V Integrated circuit features: ±1,5% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84C15-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 3662 шт: термін постачання 14-30 дні (днів) |
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| DDZX15-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOT23 Type of diode: Zener Power dissipation: 0.3W Tolerance: ±2.5% Zener voltage: 15V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP7115-15SEG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT353; SMD Output voltage: 1.5V Output current: 0.15A Manufacturer series: AP7115 Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: voltage regulator Voltage drop: 0.3V Number of channels: 1 Tolerance: ±2% Input voltage: 2.5...5.5V Case: SOT353 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear |
на замовлення 2440 шт: термін постачання 14-30 дні (днів) |
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| TLV271CW5-7 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB Type of integrated circuit: operational amplifier Bandwidth: 2MHz Number of channels: 1 Mounting: SMT Case: SOT25 Operating temperature: 0...70°C Integrated circuit features: rail-to-rail output Input offset voltage: 5mV Slew rate: 2V/μs Operating voltage: 2.7...16V Open-loop gain: 110dB Kind of package: reel; tape Power dissipation: 0.22W |
на замовлення 2850 шт: термін постачання 14-30 дні (днів) |
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TLV271IW5-7 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB Type of integrated circuit: operational amplifier Bandwidth: 2MHz Number of channels: 1 Mounting: SMT Case: SOT25 Operating temperature: -40...125°C Integrated circuit features: rail-to-rail output Input offset voltage: 5mV Slew rate: 2V/μs Operating voltage: 2.7...16V Open-loop gain: 110dB Kind of package: reel; tape Power dissipation: 0.22W |
на замовлення 1800 шт: термін постачання 14-30 дні (днів) |
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AP3031KTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.7...16V DC Output voltage: 37V DC Output current: 1.4A Case: SOT23-6 Mounting: SMD Frequency: 1MHz Topology: boost Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 92% Integrated circuit features: PWM Application: for LED applications |
на замовлення 979 шт: термін постачання 14-30 дні (днів) |
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AP3012KTR-E1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.6...16V DC Output voltage: 1.25...29V DC Output current: 0.5A Case: SOT23-5 Mounting: SMD Frequency: 1.5MHz Topology: boost Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 85% |
на замовлення 1821 шт: термін постачання 14-30 дні (днів) |
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AP3012KTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.6...16V DC Output voltage: 1.25...29V DC Output current: 0.5A Case: SOT25 Mounting: SMD Frequency: 1.5MHz Topology: boost Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 85% |
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В кошику од. на суму грн. | ||||||||||||||||
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FZT749TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 3A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Frequency: 160MHz Kind of package: reel; tape Current gain: 75...570 Quantity in set/package: 1000pcs. |
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В кошику од. на суму грн. | ||||||||||||||||
| FZT749TC | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT223-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 3A Power dissipation: 2W Case: SOT223-3 Mounting: SMD Frequency: 160MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCW68HTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.31W Case: SOT23 Current gain: 250...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 1000pcs. |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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| DESD5V0S1BLD-7B | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Leakage current: 0.1µA Max. forward impulse current: 12A Max. off-state voltage: 5V Breakdown voltage: 5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PDS1040-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 40V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.51V Leakage current: 50mA Max. forward impulse current: 275A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| PDS1040L-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 40V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.49V Max. forward impulse current: 275A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| PDS1040CTL-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 5Ax2; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 40V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 40V Leakage current: 25mA Max. forward impulse current: 110A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| PDS1040Q-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 40V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.51V Leakage current: 50mA Max. forward impulse current: 275A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMSZ5231BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 5.1V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5231BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 5.1V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJ6.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.67V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 850 шт: термін постачання 14-30 дні (днів) |
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| DMT6012LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.6A Pulsed drain current: 60A Power dissipation: 1.2W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 13.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| DMT6012LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.6A Pulsed drain current: 60A Power dissipation: 1.2W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 13.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6012LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34.7A Pulsed drain current: 170A Power dissipation: 1.95W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6012LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34.7A Pulsed drain current: 170A Power dissipation: 1.95W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S3MB-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Capacitance: 40pF Case: SMB Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||
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RS3MB-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 100A Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 0.5µs Max. forward voltage: 1.3V Load current: 3A Max. forward impulse current: 100A Max. off-state voltage: 1kV Case: SMB Type of diode: rectifying |
на замовлення 1963 шт: термін постачання 14-30 дні (днів) |
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| BZX84B3V9Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.9V Mounting: SMD Tolerance: ±2% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
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| BZX84B3V9-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.9V Mounting: SMD Tolerance: ±2% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
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В кошику од. на суму грн. | |||||||||||||||||
| BZT52C11-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 11V; SMD; SOD123; reel,tape; single diode Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Type of diode: Zener Power dissipation: 0.37W Tolerance: ±5.5% Zener voltage: 11V |
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|
SDM10M45SD-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT26; SMD; 45V; 0.1A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT26 Mounting: SMD Max. off-state voltage: 45V Load current: 0.1A Semiconductor structure: double series x2 Max. forward voltage: 0.45V Kind of package: reel; tape Capacitance: 6pF Leakage current: 1µA Power dissipation: 0.225W Max. forward impulse current: 1A |
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|
DDZ9702S-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; SOD323; reel,tape; single diode Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V |
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|
SMCJ48A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 19.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 763 шт: термін постачання 14-30 дні (днів) |
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SMCJ48CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 19.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| DGD05473FNQ-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1 Operating temperature: -40...125°C Case: U-DFN3030-10 Topology: MOSFET half-bridge Kind of package: reel; tape Mounting: SMD Output current: -2.5...1.5A Pulse fall time: 25ns Impulse rise time: 30ns Number of channels: 1 Supply voltage: 4.4...14V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side |
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| DGD05473FN-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1 Operating temperature: -40...125°C Case: VDFN10 Topology: MOSFET half-bridge Kind of package: reel; tape Mounting: SMD Output current: -2.5...1.5A Pulse fall time: 25ns Impulse rise time: 30ns Number of channels: 1 Supply voltage: 4.2...14V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side |
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| DMS2220LFDB-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -12A Drain current: -3.5A On-state resistance: 0.12Ω Power dissipation: 1.4W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Kind of channel: enhancement Case: U-DFN2020-6 |
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|
DGTD65T15H2TF | DIODES INCORPORATED |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 24W; ITO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 24W Case: ITO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 46ns Turn-off time: 280ns |
на замовлення 474 шт: термін постачання 14-30 дні (днів) |
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DFLR1600-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; PowerDI®123; Ufmax: 1.1V; Ifsm: 25A Type of diode: rectifying Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: PowerDI®123 Mounting: SMD Max. forward voltage: 1.1V Max. forward impulse current: 25A Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 4025 шт: термін постачання 14-30 дні (днів) |
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| DMP2021UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.2A Pulsed drain current: -60A Power dissipation: 0.47W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 80mΩ Mounting: SMD Gate charge: 59nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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| ADTC124ECAQ-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ Polarisation: bipolar Kind of transistor: BRT Mounting: SMD Case: SOT23 Type of transistor: NPN Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.31W Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 56 Quantity in set/package: 10000pcs. Base resistor: 22kΩ Base-emitter resistor: 22kΩ Application: automotive industry |
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|
DMP10H400SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8A Power dissipation: 42W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 1161 шт: термін постачання 14-30 дні (днів) |
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BZT52C3V9S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 3.9V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
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В кошику од. на суму грн. | ||||||||||||||||
| BZT52C3V9LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 3.9V; SMD; X1-DFN1006-2; reel,tape Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: X1-DFN1006-2 Kind of package: reel; tape Semiconductor structure: single diode |
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| BZX84B27-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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| FMMT549TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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| FMMT549ATA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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| DMNH4015SSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMNH4015SSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| BZX84C3V9TS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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| BZX84C3V9W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
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| 74LVC2G17DW-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: SOT363
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: SOT363
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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| 74LVC2G17FX4-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1409-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1409-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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| 74LVC2G17FW4-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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| 74LVC2G17FZ4-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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| SMBJ7.0A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ36CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
на замовлення 97 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.79 грн |
| 25+ | 17.61 грн |
| 28+ | 15.24 грн |
| 50+ | 10.33 грн |
| SMAJ36CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 74AHC1G126SE-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC
Operating temperature: -40...125°C
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 1
Kind of output: 3-state
Manufacturer series: AHC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC
Operating temperature: -40...125°C
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 1
Kind of output: 3-state
Manufacturer series: AHC
на замовлення 1984 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.12 грн |
| 68+ | 6.26 грн |
| 76+ | 5.59 грн |
| 90+ | 4.74 грн |
| 111+ | 3.84 грн |
| 250+ | 3.47 грн |
| 500+ | 3.26 грн |
| 1000+ | 3.10 грн |
| APX811-46UG-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Integrated circuit features: manual reset
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Case: SOT143
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Integrated circuit features: manual reset
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Case: SOT143
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
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| BZX84B11-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 84+ | 5.08 грн |
| 93+ | 4.57 грн |
| 135+ | 3.14 грн |
| 500+ | 2.51 грн |
| 1000+ | 2.32 грн |
| 3000+ | 2.07 грн |
| APX803L20-23SA-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.3V
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.3V
Integrated circuit features: ±1,5% accuracy
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| BZX84C15-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 3662 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 3.69 грн |
| 280+ | 1.53 грн |
| 500+ | 1.36 грн |
| 2500+ | 1.27 грн |
| DDZX15-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±2.5%
Zener voltage: 15V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±2.5%
Zener voltage: 15V
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| AP7115-15SEG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT353; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: AP7115
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...5.5V
Case: SOT353
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT353; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: AP7115
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...5.5V
Case: SOT353
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
на замовлення 2440 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.30 грн |
| 80+ | 5.59 грн |
| 100+ | 4.91 грн |
| 500+ | 4.40 грн |
| TLV271CW5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: 0...70°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Open-loop gain: 110dB
Kind of package: reel; tape
Power dissipation: 0.22W
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: 0...70°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Open-loop gain: 110dB
Kind of package: reel; tape
Power dissipation: 0.22W
на замовлення 2850 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 20.06 грн |
| 29+ | 14.73 грн |
| 33+ | 13.21 грн |
| 38+ | 11.34 грн |
| 100+ | 9.40 грн |
| 250+ | 8.72 грн |
| 500+ | 8.47 грн |
| TLV271IW5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Open-loop gain: 110dB
Kind of package: reel; tape
Power dissipation: 0.22W
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Open-loop gain: 110dB
Kind of package: reel; tape
Power dissipation: 0.22W
на замовлення 1800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.17 грн |
| AP3031KTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...16V DC
Output voltage: 37V DC
Output current: 1.4A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 92%
Integrated circuit features: PWM
Application: for LED applications
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...16V DC
Output voltage: 37V DC
Output current: 1.4A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 92%
Integrated circuit features: PWM
Application: for LED applications
на замовлення 979 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.97 грн |
| 28+ | 15.58 грн |
| 31+ | 13.97 грн |
| 36+ | 12.02 грн |
| 100+ | 10.16 грн |
| 150+ | 9.82 грн |
| 250+ | 9.73 грн |
| AP3012KTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT23-5
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT23-5
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
на замовлення 1821 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.64 грн |
| 17+ | 26.24 грн |
| 19+ | 23.36 грн |
| 25+ | 20.23 грн |
| 100+ | 17.01 грн |
| 250+ | 15.75 грн |
| 500+ | 15.07 грн |
| AP3012KTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
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| FZT749TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Frequency: 160MHz
Kind of package: reel; tape
Current gain: 75...570
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Frequency: 160MHz
Kind of package: reel; tape
Current gain: 75...570
Quantity in set/package: 1000pcs.
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| FZT749TC |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT223-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-3
Mounting: SMD
Frequency: 160MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT223-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-3
Mounting: SMD
Frequency: 160MHz
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| BCW68HTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.73 грн |
| DESD5V0S1BLD-7B |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 0.1µA
Max. forward impulse current: 12A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 0.1µA
Max. forward impulse current: 12A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
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| PDS1040-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
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| PDS1040L-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 275A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 275A
Kind of package: reel; tape
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| PDS1040CTL-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 40V
Leakage current: 25mA
Max. forward impulse current: 110A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 40V
Leakage current: 25mA
Max. forward impulse current: 110A
Kind of package: reel; tape
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| PDS1040Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Application: automotive industry
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| MMSZ5231BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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| MMSZ5231BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| SMBJ6.0CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 850 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.50 грн |
| 39+ | 11.00 грн |
| 51+ | 8.38 грн |
| DMT6012LFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMT6012LFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMT6012LFV-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMT6012LFV-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| S3MB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
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| RS3MB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 100A
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 0.5µs
Max. forward voltage: 1.3V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 1kV
Case: SMB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 100A
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 0.5µs
Max. forward voltage: 1.3V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 1kV
Case: SMB
Type of diode: rectifying
на замовлення 1963 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.40 грн |
| 16+ | 27.60 грн |
| 100+ | 22.01 грн |
| 500+ | 18.37 грн |
| 1000+ | 16.93 грн |
| BZX84B3V9Q-7-F |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| BZX84B3V9-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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| BZT52C11-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37W
Tolerance: ±5.5%
Zener voltage: 11V
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37W
Tolerance: ±5.5%
Zener voltage: 11V
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| SDM10M45SD-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 45V; 0.1A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT26
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.1A
Semiconductor structure: double series x2
Max. forward voltage: 0.45V
Kind of package: reel; tape
Capacitance: 6pF
Leakage current: 1µA
Power dissipation: 0.225W
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 45V; 0.1A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT26
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.1A
Semiconductor structure: double series x2
Max. forward voltage: 0.45V
Kind of package: reel; tape
Capacitance: 6pF
Leakage current: 1µA
Power dissipation: 0.225W
Max. forward impulse current: 1A
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| DDZ9702S-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; reel,tape; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; reel,tape; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
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| SMCJ48A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 763 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 50.14 грн |
| 11+ | 38.52 грн |
| 100+ | 27.85 грн |
| 500+ | 22.77 грн |
| SMCJ48CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| DGD05473FNQ-7 |
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Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: U-DFN3030-10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.4...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: U-DFN3030-10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.4...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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| DGD05473FN-7 |
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Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: VDFN10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.2...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: VDFN10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.2...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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| DMS2220LFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12A
Drain current: -3.5A
On-state resistance: 0.12Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12A
Drain current: -3.5A
On-state resistance: 0.12Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Case: U-DFN2020-6
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| DGTD65T15H2TF |
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Виробник: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 24W; ITO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 24W
Case: ITO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 280ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 24W; ITO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 24W
Case: ITO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 280ns
на замовлення 474 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 196.91 грн |
| 10+ | 114.28 грн |
| 25+ | 98.20 грн |
| 100+ | 78.73 грн |
| 250+ | 69.41 грн |
| DFLR1600-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; PowerDI®123; Ufmax: 1.1V; Ifsm: 25A
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: PowerDI®123
Mounting: SMD
Max. forward voltage: 1.1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; PowerDI®123; Ufmax: 1.1V; Ifsm: 25A
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: PowerDI®123
Mounting: SMD
Max. forward voltage: 1.1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4025 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.88 грн |
| 30+ | 14.48 грн |
| 100+ | 10.24 грн |
| 500+ | 7.93 грн |
| 1000+ | 6.71 грн |
| 3000+ | 5.29 грн |
| DMP2021UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Pulsed drain current: -60A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Pulsed drain current: -60A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| ADTC124ECAQ-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 56
Quantity in set/package: 10000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 56
Quantity in set/package: 10000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
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| DMP10H400SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1161 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.43 грн |
| 13+ | 34.28 грн |
| 100+ | 24.04 грн |
| 250+ | 21.42 грн |
| 500+ | 19.55 грн |
| 1000+ | 17.69 грн |
| BZT52C3V9S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C3V9LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.9V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.9V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.


























