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BZX84B27-7-F DIODES INCORPORATED BZX84Bxx(x).pdf BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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FMMT549TA DIODES INCORPORATED FMMT549.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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FMMT549ATA DIODES INCORPORATED FMMT549.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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DMNH4015SSD-13 DMNH4015SSD-13 DIODES INCORPORATED DMNH4015SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMNH4015SSDQ-13 DMNH4015SSDQ-13 DIODES INCORPORATED DMNH4015SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BZX84C3V9TS-7-F BZX84C3V9TS-7-F DIODES INCORPORATED BZX84CxxTS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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BZX84C3V9W-7-F BZX84C3V9W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
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74LVC2G17DW-7 74LVC2G17DW-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: SOT363
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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74LVC2G17FX4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1409-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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74LVC2G17FW4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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74LVC2G17FZ4-7 DIODES INCORPORATED 74LVC2G17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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SMBJ7.0A-13-F SMBJ7.0A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ36CA-13-F SMAJ36CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
20+22.79 грн
25+17.61 грн
28+15.24 грн
50+10.33 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMAJ36CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
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74AHC1G126SE-7 74AHC1G126SE-7 DIODES INCORPORATED 74AHC1G126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC
Operating temperature: -40...125°C
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 1
Kind of output: 3-state
Manufacturer series: AHC
на замовлення 1984 шт:
термін постачання 14-30 дні (днів)
50+9.12 грн
68+6.26 грн
76+5.59 грн
90+4.74 грн
111+3.84 грн
250+3.47 грн
500+3.26 грн
1000+3.10 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
APX811-46UG-7 DIODES INCORPORATED APX811_812.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Integrated circuit features: manual reset
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Case: SOT143
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
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BZX84B11-7-F BZX84B11-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
63+7.29 грн
84+5.08 грн
93+4.57 грн
135+3.14 грн
500+2.51 грн
1000+2.32 грн
3000+2.07 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
APX803L20-23SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.3V
Integrated circuit features: ±1,5% accuracy
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BZX84C15-13-F BZX84C15-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 3662 шт:
термін постачання 14-30 дні (днів)
140+3.69 грн
280+1.53 грн
500+1.36 грн
2500+1.27 грн
Мінімальне замовлення: 140
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DDZX15-13 DIODES INCORPORATED ds30408.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±2.5%
Zener voltage: 15V
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AP7115-15SEG-7 DIODES INCORPORATED AP7115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT353; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: AP7115
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...5.5V
Case: SOT353
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
на замовлення 2440 шт:
термін постачання 14-30 дні (днів)
50+9.30 грн
80+5.59 грн
100+4.91 грн
500+4.40 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
TLV271CW5-7 DIODES INCORPORATED TLV27x.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: 0...70°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Open-loop gain: 110dB
Kind of package: reel; tape
Power dissipation: 0.22W
на замовлення 2850 шт:
термін постачання 14-30 дні (днів)
23+20.06 грн
29+14.73 грн
33+13.21 грн
38+11.34 грн
100+9.40 грн
250+8.72 грн
500+8.47 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
TLV271IW5-7 TLV271IW5-7 DIODES INCORPORATED TLV27x.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Open-loop gain: 110dB
Kind of package: reel; tape
Power dissipation: 0.22W
на замовлення 1800 шт:
термін постачання 14-30 дні (днів)
16+29.17 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AP3031KTR-G1 AP3031KTR-G1 DIODES INCORPORATED AP3031.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...16V DC
Output voltage: 37V DC
Output current: 1.4A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 92%
Integrated circuit features: PWM
Application: for LED applications
на замовлення 979 шт:
термін постачання 14-30 дні (днів)
22+20.97 грн
28+15.58 грн
31+13.97 грн
36+12.02 грн
100+10.16 грн
150+9.82 грн
250+9.73 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
AP3012KTR-E1 AP3012KTR-E1 DIODES INCORPORATED AP3012-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT23-5
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
на замовлення 1821 шт:
термін постачання 14-30 дні (днів)
14+34.64 грн
17+26.24 грн
19+23.36 грн
25+20.23 грн
100+17.01 грн
250+15.75 грн
500+15.07 грн
Мінімальне замовлення: 14
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AP3012KTR-G1 AP3012KTR-G1 DIODES INCORPORATED AP3012-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
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FZT749TA FZT749TA DIODES INCORPORATED FZT749.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Frequency: 160MHz
Kind of package: reel; tape
Current gain: 75...570
Quantity in set/package: 1000pcs.
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FZT749TC DIODES INCORPORATED FZT749.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT223-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-3
Mounting: SMD
Frequency: 160MHz
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BCW68HTA BCW68HTA DIODES INCORPORATED BCW68H.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
7+64.73 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DESD5V0S1BLD-7B DIODES INCORPORATED DESD5V0S1BLD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 0.1µA
Max. forward impulse current: 12A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
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PDS1040-13 DIODES INCORPORATED PDS1040.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
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PDS1040L-13 DIODES INCORPORATED ds30486.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 275A
Kind of package: reel; tape
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PDS1040CTL-13 DIODES INCORPORATED ds30485.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 40V
Leakage current: 25mA
Max. forward impulse current: 110A
Kind of package: reel; tape
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PDS1040Q-13 DIODES INCORPORATED PDS1040.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Application: automotive industry
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MMSZ5231BS-7-F MMSZ5231BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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MMSZ5231BQ-7-F MMSZ5231BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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SMBJ6.0CA-13-F SMBJ6.0CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 850 шт:
термін постачання 14-30 дні (днів)
30+15.50 грн
39+11.00 грн
51+8.38 грн
Мінімальне замовлення: 30
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DMT6012LFDF-13 DIODES INCORPORATED DMT6012LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMT6012LFDF-7 DIODES INCORPORATED DMT6012LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT6012LFV-13 DIODES INCORPORATED DMT6012LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMT6012LFV-7 DIODES INCORPORATED DMT6012LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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S3MB-13-F S3MB-13-F DIODES INCORPORATED ds16005.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
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RS3MB-13-F RS3MB-13-F DIODES INCORPORATED RS3A_B%7ERS3M_B.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 100A
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 0.5µs
Max. forward voltage: 1.3V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 1kV
Case: SMB
Type of diode: rectifying
на замовлення 1963 шт:
термін постачання 14-30 дні (днів)
10+47.40 грн
16+27.60 грн
100+22.01 грн
500+18.37 грн
1000+16.93 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BZX84B3V9Q-7-F DIODES INCORPORATED Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84B3V9-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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BZT52C11-13-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37W
Tolerance: ±5.5%
Zener voltage: 11V
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SDM10M45SD-7-F SDM10M45SD-7-F DIODES INCORPORATED SDM10M45SD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 45V; 0.1A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT26
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.1A
Semiconductor structure: double series x2
Max. forward voltage: 0.45V
Kind of package: reel; tape
Capacitance: 6pF
Leakage current: 1µA
Power dissipation: 0.225W
Max. forward impulse current: 1A
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DDZ9702S-7 DDZ9702S-7 DIODES INCORPORATED DDZ9689-7.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; reel,tape; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
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SMCJ48A-13-F SMCJ48A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 763 шт:
термін постачання 14-30 дні (днів)
10+50.14 грн
11+38.52 грн
100+27.85 грн
500+22.77 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMCJ48CA-13-F SMCJ48CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DGD05473FNQ-7 DIODES INCORPORATED DGD05473FNQ.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: U-DFN3030-10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.4...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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DGD05473FN-7 DIODES INCORPORATED DGD05473.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: VDFN10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.2...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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DMS2220LFDB-7 DIODES INCORPORATED ds31546.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12A
Drain current: -3.5A
On-state resistance: 0.12Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Case: U-DFN2020-6
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DGTD65T15H2TF DGTD65T15H2TF DIODES INCORPORATED DGTD65T15H2TF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 24W; ITO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 24W
Case: ITO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 280ns
на замовлення 474 шт:
термін постачання 14-30 дні (днів)
3+196.91 грн
10+114.28 грн
25+98.20 грн
100+78.73 грн
250+69.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DFLR1600-7 DFLR1600-7 DIODES INCORPORATED ds30602.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; PowerDI®123; Ufmax: 1.1V; Ifsm: 25A
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: PowerDI®123
Mounting: SMD
Max. forward voltage: 1.1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4025 шт:
термін постачання 14-30 дні (днів)
21+21.88 грн
30+14.48 грн
100+10.24 грн
500+7.93 грн
1000+6.71 грн
3000+5.29 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DMP2021UFDF-7 DIODES INCORPORATED DMP2021UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Pulsed drain current: -60A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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ADTC124ECAQ-13 DIODES INCORPORATED ADTC124ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 56
Quantity in set/package: 10000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
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DMP10H400SK3-13 DMP10H400SK3-13 DIODES INCORPORATED DMP10H400SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1161 шт:
термін постачання 14-30 дні (днів)
8+57.43 грн
13+34.28 грн
100+24.04 грн
250+21.42 грн
500+19.55 грн
1000+17.69 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BZT52C3V9S-7-F BZT52C3V9S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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BZT52C3V9LP-7 DIODES INCORPORATED DS_31_BZT52C2V4LP-BZT52C39LP.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.9V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
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BZX84B27-7-F BZX84Bxx(x).pdf BZX84Bxxx.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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FMMT549TA FMMT549.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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FMMT549ATA FMMT549.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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DMNH4015SSD-13 DMNH4015SSD.pdf
DMNH4015SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMNH4015SSDQ-13 DMNH4015SSDQ.pdf
DMNH4015SSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BZX84C3V9TS-7-F BZX84CxxTS_SER.pdf
BZX84C3V9TS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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BZX84C3V9W-7-F BZX84CxxW_SER.pdf
BZX84C3V9W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
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74LVC2G17DW-7 74LVC2G17.pdf
74LVC2G17DW-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: SOT363
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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74LVC2G17FX4-7 74LVC2G17.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1409-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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74LVC2G17FW4-7 74LVC2G17.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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74LVC2G17FZ4-7 74LVC2G17.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Technology: CMOS
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SMBJ7.0A-13-F SMBJ_ser.pdf
SMBJ7.0A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ36CA-13-F SMAJ_ser.pdf
SMAJ36CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.79 грн
25+17.61 грн
28+15.24 грн
50+10.33 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMAJ36CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
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74AHC1G126SE-7 74AHC1G126.pdf
74AHC1G126SE-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHC
Operating temperature: -40...125°C
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 1
Kind of output: 3-state
Manufacturer series: AHC
на замовлення 1984 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.12 грн
68+6.26 грн
76+5.59 грн
90+4.74 грн
111+3.84 грн
250+3.47 грн
500+3.26 грн
1000+3.10 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
APX811-46UG-7 APX811_812.pdf
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Integrated circuit features: manual reset
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Case: SOT143
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
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BZX84B11-7-F BZX84Bxxx.pdf
BZX84B11-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.29 грн
84+5.08 грн
93+4.57 грн
135+3.14 грн
500+2.51 грн
1000+2.32 грн
3000+2.07 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
APX803L20-23SA-7 APX803L.pdf
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Number of channels: 1
Threshold on-voltage: 2.3V
Integrated circuit features: ±1,5% accuracy
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BZX84C15-13-F BZX84Cxx_SER.pdf
BZX84C15-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 3662 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
140+3.69 грн
280+1.53 грн
500+1.36 грн
2500+1.27 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
DDZX15-13 ds30408.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±2.5%
Zener voltage: 15V
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AP7115-15SEG-7 AP7115.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT353; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: AP7115
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...5.5V
Case: SOT353
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
на замовлення 2440 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.30 грн
80+5.59 грн
100+4.91 грн
500+4.40 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
TLV271CW5-7 TLV27x.pdf
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: 0...70°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Open-loop gain: 110dB
Kind of package: reel; tape
Power dissipation: 0.22W
на замовлення 2850 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+20.06 грн
29+14.73 грн
33+13.21 грн
38+11.34 грн
100+9.40 грн
250+8.72 грн
500+8.47 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
TLV271IW5-7 TLV27x.pdf
TLV271IW5-7
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 1; Uoper: 2.7÷16V; SOT25; 110dB
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: 1
Mounting: SMT
Case: SOT25
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 5mV
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Open-loop gain: 110dB
Kind of package: reel; tape
Power dissipation: 0.22W
на замовлення 1800 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.17 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AP3031KTR-G1 AP3031.pdf
AP3031KTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷16VDC; Uout: 37VDC; 1.4A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...16V DC
Output voltage: 37V DC
Output current: 1.4A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 92%
Integrated circuit features: PWM
Application: for LED applications
на замовлення 979 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
22+20.97 грн
28+15.58 грн
31+13.97 грн
36+12.02 грн
100+10.16 грн
150+9.82 грн
250+9.73 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
AP3012KTR-E1 AP3012-DTE.pdf
AP3012KTR-E1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT23-5
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
на замовлення 1821 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.64 грн
17+26.24 грн
19+23.36 грн
25+20.23 грн
100+17.01 грн
250+15.75 грн
500+15.07 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
AP3012KTR-G1 AP3012-DTE.pdf
AP3012KTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷16VDC; Uout: 1.25÷29VDC; 0.5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...16V DC
Output voltage: 1.25...29V DC
Output current: 0.5A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 85%
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FZT749TA FZT749.pdf
FZT749TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Frequency: 160MHz
Kind of package: reel; tape
Current gain: 75...570
Quantity in set/package: 1000pcs.
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FZT749TC FZT749.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT223-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-3
Mounting: SMD
Frequency: 160MHz
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BCW68HTA BCW68H.pdf
BCW68HTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+64.73 грн
Мінімальне замовлення: 7
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DESD5V0S1BLD-7B DESD5V0S1BLD.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 0.1µA
Max. forward impulse current: 12A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
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PDS1040-13 PDS1040.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
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PDS1040L-13 ds30486.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 275A
Kind of package: reel; tape
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PDS1040CTL-13 ds30485.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 40V
Leakage current: 25mA
Max. forward impulse current: 110A
Kind of package: reel; tape
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PDS1040Q-13 PDS1040.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 40V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 50mA
Max. forward impulse current: 275A
Kind of package: reel; tape
Application: automotive industry
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MMSZ5231BS-7-F mmsz52xxbs_ser.pdf
MMSZ5231BS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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MMSZ5231BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5231BQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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SMBJ6.0CA-13-F SMBJ_ser.pdf
SMBJ6.0CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 850 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30+15.50 грн
39+11.00 грн
51+8.38 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DMT6012LFDF-13 DMT6012LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMT6012LFDF-7 DMT6012LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT6012LFV-13 DMT6012LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMT6012LFV-7 DMT6012LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.7A
Pulsed drain current: 170A
Power dissipation: 1.95W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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S3MB-13-F ds16005.pdf
S3MB-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
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RS3MB-13-F RS3A_B%7ERS3M_B.pdf
RS3MB-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 100A
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 0.5µs
Max. forward voltage: 1.3V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 1kV
Case: SMB
Type of diode: rectifying
на замовлення 1963 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+47.40 грн
16+27.60 грн
100+22.01 грн
500+18.37 грн
1000+16.93 грн
Мінімальне замовлення: 10
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BZX84B3V9Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84B3V9-7-F BZX84Bxxx.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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BZT52C11-13-F ds18004.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37W
Tolerance: ±5.5%
Zener voltage: 11V
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SDM10M45SD-7-F SDM10M45SD.pdf
SDM10M45SD-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT26; SMD; 45V; 0.1A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT26
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.1A
Semiconductor structure: double series x2
Max. forward voltage: 0.45V
Kind of package: reel; tape
Capacitance: 6pF
Leakage current: 1µA
Power dissipation: 0.225W
Max. forward impulse current: 1A
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DDZ9702S-7 DDZ9689-7.pdf
DDZ9702S-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; reel,tape; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
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SMCJ48A-13-F SMCJ_ser.pdf
SMCJ48A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 763 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+50.14 грн
11+38.52 грн
100+27.85 грн
500+22.77 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMCJ48CA-13-F SMCJ_ser.pdf
SMCJ48CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DGD05473FNQ-7 DGD05473FNQ.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: U-DFN3030-10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.4...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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DGD05473FN-7 DGD05473.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Operating temperature: -40...125°C
Case: VDFN10
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.2...14V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
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DMS2220LFDB-7 ds31546.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12A
Drain current: -3.5A
On-state resistance: 0.12Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Case: U-DFN2020-6
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DGTD65T15H2TF DGTD65T15H2TF.pdf
DGTD65T15H2TF
Виробник: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 24W; ITO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 24W
Case: ITO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 280ns
на замовлення 474 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+196.91 грн
10+114.28 грн
25+98.20 грн
100+78.73 грн
250+69.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DFLR1600-7 ds30602.pdf
DFLR1600-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; PowerDI®123; Ufmax: 1.1V; Ifsm: 25A
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: PowerDI®123
Mounting: SMD
Max. forward voltage: 1.1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4025 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.88 грн
30+14.48 грн
100+10.24 грн
500+7.93 грн
1000+6.71 грн
3000+5.29 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DMP2021UFDF-7 DMP2021UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Pulsed drain current: -60A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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ADTC124ECAQ-13 ADTC124ECAQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 56
Quantity in set/package: 10000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
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DMP10H400SK3-13 DMP10H400SK3.pdf
DMP10H400SK3-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1161 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+57.43 грн
13+34.28 грн
100+24.04 грн
250+21.42 грн
500+19.55 грн
1000+17.69 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BZT52C3V9S-7-F BZT52CxxS_ser.pdf
BZT52C3V9S-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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BZT52C3V9LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.9V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
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