Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78521) > Сторінка 1271 з 1309
Фото | Назва | Виробник | Інформація |
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FZT694BTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 120V; 1A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 1A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 130MHz |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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SMBJ170A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 189÷217.5V; 2.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 170V Breakdown voltage: 189...217.5V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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74AVCH1T45DW-7 | DIODES INCORPORATED |
![]() Description: IC: digital; 1bit,transceiver,translator; Ch: 1; CMOS; 1.2÷3.6VDC Operating temperature: -40...150°C Type of integrated circuit: digital Number of channels: 1 Kind of output: 3-state Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: 1bit; transceiver; translator Family: AVCH Mounting: SMD Case: SOT363 Supply voltage: 1.2...3.6V DC |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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74LVC244AT20-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 1.65...3.6V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Manufacturer series: LVC Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AP9211SA-AL-HAC-7 | DIODES INCORPORATED |
![]() Description: IC: PMIC; battery charging controller; MOSFET,shutdown input Mounting: SMD Case: U-DFN2030-6 Operating temperature: -40...85°C Number of rechargeable batteries: 1 x Li+ Integrated circuit features: MOSFET; shutdown input Kind of package: reel; tape Kind of integrated circuit: battery charging controller Supply voltage: 1.5...5.5V DC Type of integrated circuit: PMIC |
на замовлення 2943 шт: термін постачання 21-30 дні (днів) |
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74AUP2G14DW-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; SOT363; 0.8÷3.6VDC Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Case: SOT363 Number of inputs: 1 Type of integrated circuit: digital Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS Kind of integrated circuit: inverter Family: AUP Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
74AUP2G14FW3-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN0910-6; AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Case: X2-DFN0910-6 Number of inputs: 1 Type of integrated circuit: digital Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS Kind of integrated circuit: inverter Family: AUP Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
74AUP2G14FW4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Case: X2-DFN1010-6 Number of inputs: 1 Type of integrated circuit: digital Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS Kind of integrated circuit: inverter Family: AUP Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
74AUP2G14FZ4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1410-6; AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Case: X2-DFN1410-6 Number of inputs: 1 Type of integrated circuit: digital Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS Kind of integrated circuit: inverter Family: AUP Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
FMMT617 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 3A Power dissipation: 0.625W Case: SOT23 Current gain: 80...450 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 120MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
LSP5523-R8A | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 4.5÷27VDC; Uout: 0.925÷21.6VDC; 3A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...27V DC Output voltage: 0.925...21.6V DC Output current: 3A Case: ESOP8 Mounting: SMD Frequency: 0.34MHz Topology: buck Operating temperature: -20...125°C Kind of package: reel; tape Efficiency: 93% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SDA004-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 0.2W; double series x2; SOT363; Ch: 2; reel,tape Case: SOT363 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Semiconductor structure: double series x2 Max. off-state voltage: 80V Capacitance: 3pF Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.2W Reverse recovery time: 4ns |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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AP64502SP-13 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...125°C Output voltage: 0.8...40V DC Output current: 5A Input voltage: 3.8...40V DC Efficiency: 85% Topology: buck Frequency: 100kHz...2.2MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
AL9910SP-13 | DIODES INCORPORATED |
![]() Description: IC: driver; LED driver; SO8-EP; Ch: 1; 15÷500VDC; 90% Type of integrated circuit: driver Kind of integrated circuit: LED driver Number of channels: 1 Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...85°C Efficiency: 90% Operating voltage: 15...500V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
AP64502QSP-13 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...125°C Output voltage: 0.8...40V DC Output current: 5A Application: automotive industry Input voltage: 3.8...40V DC Efficiency: 85% Topology: buck Frequency: 100kHz...2.2MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
AP64501QSP-13 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...85°C Output voltage: 0.8...39V DC Output current: 5A Application: automotive industry Input voltage: 3.8...40V DC Efficiency: 85% Topology: buck Frequency: 510...630kHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SD103AWSQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.35A; 10ns; 200mW Mounting: SMD Application: automotive industry Power dissipation: 0.2W Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD323 Capacitance: 35pF Max. off-state voltage: 40V Max. forward voltage: 0.6V Load current: 0.35A Semiconductor structure: single diode Reverse recovery time: 10ns Max. forward impulse current: 1.5A Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMAJ28CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
на замовлення 453 шт: термін постачання 21-30 дні (днів) |
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MBR0580S1-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD123; SMD; 80V; 0.5A; reel,tape Case: SOD123 Capacitance: 15pF Max. off-state voltage: 80V Max. forward voltage: 0.8V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 14A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 873 шт: термін постачання 21-30 дні (днів) |
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BCX5210TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 1000pcs. Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BCX52TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 1000pcs. Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
PAM2320BECADJR | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; PSOP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.7...5.5V DC Output voltage: 0.6...5.5V DC Output current: 3A Case: PSOP8 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B0540WS-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.285V Max. forward impulse current: 3A Kind of package: reel; tape Power dissipation: 235mW Capacitance: 125pF |
на замовлення 1084 шт: термін постачання 21-30 дні (днів) |
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BAS40-06Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.35W Reverse recovery time: 5ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAS40-06Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.35W Reverse recovery time: 5ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAS40-06T-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.15W Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ZVN2106GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.7A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 635 шт: термін постачання 21-30 дні (днів) |
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B120-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 20V Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Max. forward voltage: 0.5V Load current: 1A Max. forward impulse current: 30A |
на замовлення 4320 шт: термін постачання 21-30 дні (днів) |
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DMP4015SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W Drain-source voltage: -40V Drain current: -8.7A On-state resistance: 15mΩ Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -100A Mounting: SMD Case: PowerDI®5060-8 |
на замовлення 2386 шт: термін постачання 21-30 дні (днів) |
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DMT6017LFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 65V Drain current: 29A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.12W Gate charge: 15.3nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 140A Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SDT10A100P5-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape Mounting: SMD Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.24kA Leakage current: 20mA Kind of package: reel; tape Type of diode: Schottky rectifying Case: PowerDI®5 Max. off-state voltage: 100V Max. forward voltage: 0.68V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DESD3V3E1BL-7B | DIODES INCORPORATED |
![]() Description: Diode: TVS; 3.8V; bidirectional; DFN1006-2 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 3.8V Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA |
на замовлення 9974 шт: термін постачання 21-30 дні (днів) |
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SMAJ60A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 950 шт: термін постачання 21-30 дні (днів) |
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SMAJ64A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 71.1÷78.6V; 3.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 3.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMAJ16CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 4088 шт: термін постачання 21-30 дні (днів) |
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DXT13003DG-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 450V; 1.3A; 3W; SOT223 Frequency: 4MHz Collector-emitter voltage: 450V Current gain: 5...40 Collector current: 1.3A Pulsed collector current: 3A Type of transistor: NPN Power dissipation: 3W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 2500pcs. Mounting: SMD Case: SOT223 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
KBP310G | DIODES INCORPORATED |
![]() ![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 90A; flat Case: KBP Kind of package: tube Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 90A Electrical mounting: THT Version: flat Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Leads: flat pin |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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74LVC125AT14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LVC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Case: TSSOP14 Supply voltage: 1.65...5.5V DC Number of channels: 4 Quiescent current: 40µA Kind of output: 3-state Kind of package: reel; tape Manufacturer series: LVC Mounting: SMD Operating temperature: -40...125°C |
на замовлення 921 шт: термін постачання 21-30 дні (днів) |
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74LVC125AS14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 4; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: buffer Case: SO14 Supply voltage: 1.65...5.5V DC Number of channels: 4 Kind of output: 3-state Kind of package: reel; tape Technology: CMOS Family: LVC Mounting: SMD Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MMBT5551Q-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100...300MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MMBT5401Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 50...240 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MMBT5401-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 50...240 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AZ23C18-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; double,common anode Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.3W Type of diode: Zener Semiconductor structure: common anode; double Zener voltage: 18V |
на замовлення 5619 шт: термін постачання 21-30 дні (днів) |
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DPLS4140E-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 140V; 4A; 1W; SOT223 Mounting: SMD Collector-emitter voltage: 140V Current gain: 12...300 Collector current: 4A Pulsed collector current: 10A Type of transistor: PNP Frequency: 150MHz Power dissipation: 1W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 2500pcs. Case: SOT223 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BC807-40-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 170...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 10000pcs. Pulsed collector current: 1A |
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BC807-40Q-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 170...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Quantity in set/package: 10000pcs. Pulsed collector current: 1A |
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В кошику од. на суму грн. | |||||||||||||
BC807-40Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 170...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Quantity in set/package: 3000pcs. Pulsed collector current: 1A |
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В кошику од. на суму грн. | |||||||||||||
BC807-40W-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT323 Current gain: 170...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. Pulsed collector current: 1A |
на замовлення 5900 шт: термін постачання 21-30 дні (днів) |
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DSS2515M-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3 Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Collector-emitter voltage: 15V Current gain: 90...200 Collector current: 0.5A Pulsed collector current: 1A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar Quantity in set/package: 3000pcs. |
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DSS2515M-7B | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3 Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Collector-emitter voltage: 15V Current gain: 90...200 Collector current: 0.5A Pulsed collector current: 1A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar Quantity in set/package: 10000pcs. |
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DSS2540M-7B | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3 Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Frequency: 250...300MHz Collector-emitter voltage: 40V Current gain: 50...200 Collector current: 0.5A Pulsed collector current: 1A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar Quantity in set/package: 10000pcs. |
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ULN2004AS16-13 | DIODES INCORPORATED |
![]() Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...105°C Application: for inductive load Input voltage: 30V Kind of package: reel; tape |
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BC848A-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 110...200 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
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BC848AW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
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BC848B-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
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MMBT2222A-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 10000pcs. Pulsed collector current: 0.8A |
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MMBT2222ALP4-7B | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 1W; X2-DFN1006-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1W Case: X2-DFN1006-3 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 10000pcs. Pulsed collector current: 0.8A |
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MMBT2222AQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Quantity in set/package: 3000pcs. Pulsed collector current: 0.8A |
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В кошику од. на суму грн. | |||||||||||||
SMAJ12AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
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SMAJ12CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. |
FZT694BTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 235 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.35 грн |
25+ | 26.54 грн |
40+ | 22.65 грн |
109+ | 21.38 грн |
SMBJ170A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 189÷217.5V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 189÷217.5V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74AVCH1T45DW-7 |
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Виробник: DIODES INCORPORATED
Category: Level translators
Description: IC: digital; 1bit,transceiver,translator; Ch: 1; CMOS; 1.2÷3.6VDC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 1bit; transceiver; translator
Family: AVCH
Mounting: SMD
Case: SOT363
Supply voltage: 1.2...3.6V DC
Category: Level translators
Description: IC: digital; 1bit,transceiver,translator; Ch: 1; CMOS; 1.2÷3.6VDC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 1bit; transceiver; translator
Family: AVCH
Mounting: SMD
Case: SOT363
Supply voltage: 1.2...3.6V DC
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.42 грн |
16+ | 23.77 грн |
20+ | 19.29 грн |
100+ | 9.87 грн |
127+ | 6.88 грн |
347+ | 6.50 грн |
74LVC244AT20-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: LVC
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: LVC
Quiescent current: 40µA
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AP9211SA-AL-HAC-7 |
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Виробник: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Mounting: SMD
Case: U-DFN2030-6
Operating temperature: -40...85°C
Number of rechargeable batteries: 1 x Li+
Integrated circuit features: MOSFET; shutdown input
Kind of package: reel; tape
Kind of integrated circuit: battery charging controller
Supply voltage: 1.5...5.5V DC
Type of integrated circuit: PMIC
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Mounting: SMD
Case: U-DFN2030-6
Operating temperature: -40...85°C
Number of rechargeable batteries: 1 x Li+
Integrated circuit features: MOSFET; shutdown input
Kind of package: reel; tape
Kind of integrated circuit: battery charging controller
Supply voltage: 1.5...5.5V DC
Type of integrated circuit: PMIC
на замовлення 2943 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.84 грн |
25+ | 38.87 грн |
27+ | 32.70 грн |
75+ | 30.91 грн |
500+ | 30.87 грн |
74AUP2G14DW-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; SOT363; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Case: SOT363
Number of inputs: 1
Type of integrated circuit: digital
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Family: AUP
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; SOT363; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Case: SOT363
Number of inputs: 1
Type of integrated circuit: digital
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Family: AUP
Mounting: SMD
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74AUP2G14FW3-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN0910-6; AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Case: X2-DFN0910-6
Number of inputs: 1
Type of integrated circuit: digital
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Family: AUP
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN0910-6; AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Case: X2-DFN0910-6
Number of inputs: 1
Type of integrated circuit: digital
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Family: AUP
Mounting: SMD
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74AUP2G14FW4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Case: X2-DFN1010-6
Number of inputs: 1
Type of integrated circuit: digital
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Family: AUP
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Case: X2-DFN1010-6
Number of inputs: 1
Type of integrated circuit: digital
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Family: AUP
Mounting: SMD
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74AUP2G14FZ4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1410-6; AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Case: X2-DFN1410-6
Number of inputs: 1
Type of integrated circuit: digital
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Family: AUP
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; IN: 1; CMOS; SMD; X2-DFN1410-6; AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Case: X2-DFN1410-6
Number of inputs: 1
Type of integrated circuit: digital
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: inverter
Family: AUP
Mounting: SMD
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FMMT617 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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LSP5523-R8A |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷27VDC; Uout: 0.925÷21.6VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...27V DC
Output voltage: 0.925...21.6V DC
Output current: 3A
Case: ESOP8
Mounting: SMD
Frequency: 0.34MHz
Topology: buck
Operating temperature: -20...125°C
Kind of package: reel; tape
Efficiency: 93%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷27VDC; Uout: 0.925÷21.6VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...27V DC
Output voltage: 0.925...21.6V DC
Output current: 3A
Case: ESOP8
Mounting: SMD
Frequency: 0.34MHz
Topology: buck
Operating temperature: -20...125°C
Kind of package: reel; tape
Efficiency: 93%
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SDA004-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 0.2W; double series x2; SOT363; Ch: 2; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: double series x2
Max. off-state voltage: 80V
Capacitance: 3pF
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2W
Reverse recovery time: 4ns
Category: Protection diodes - arrays
Description: Diode: TVS array; 0.2W; double series x2; SOT363; Ch: 2; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: double series x2
Max. off-state voltage: 80V
Capacitance: 3pF
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2W
Reverse recovery time: 4ns
на замовлення 130 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.34 грн |
27+ | 14.28 грн |
35+ | 10.76 грн |
100+ | 7.03 грн |
AP64502SP-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output voltage: 0.8...40V DC
Output current: 5A
Input voltage: 3.8...40V DC
Efficiency: 85%
Topology: buck
Frequency: 100kHz...2.2MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output voltage: 0.8...40V DC
Output current: 5A
Input voltage: 3.8...40V DC
Efficiency: 85%
Topology: buck
Frequency: 100kHz...2.2MHz
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AL9910SP-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8-EP; Ch: 1; 15÷500VDC; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Efficiency: 90%
Operating voltage: 15...500V DC
Category: LED drivers
Description: IC: driver; LED driver; SO8-EP; Ch: 1; 15÷500VDC; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Efficiency: 90%
Operating voltage: 15...500V DC
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AP64502QSP-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output voltage: 0.8...40V DC
Output current: 5A
Application: automotive industry
Input voltage: 3.8...40V DC
Efficiency: 85%
Topology: buck
Frequency: 100kHz...2.2MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output voltage: 0.8...40V DC
Output current: 5A
Application: automotive industry
Input voltage: 3.8...40V DC
Efficiency: 85%
Topology: buck
Frequency: 100kHz...2.2MHz
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AP64501QSP-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 0.8...39V DC
Output current: 5A
Application: automotive industry
Input voltage: 3.8...40V DC
Efficiency: 85%
Topology: buck
Frequency: 510...630kHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 0.8...39V DC
Output current: 5A
Application: automotive industry
Input voltage: 3.8...40V DC
Efficiency: 85%
Topology: buck
Frequency: 510...630kHz
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SD103AWSQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.35A; 10ns; 200mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD323
Capacitance: 35pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 0.35A
Semiconductor structure: single diode
Reverse recovery time: 10ns
Max. forward impulse current: 1.5A
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.35A; 10ns; 200mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD323
Capacitance: 35pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 0.35A
Semiconductor structure: single diode
Reverse recovery time: 10ns
Max. forward impulse current: 1.5A
Leakage current: 5µA
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SMAJ28CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 453 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.10 грн |
39+ | 9.72 грн |
100+ | 5.75 грн |
203+ | 4.31 грн |
MBR0580S1-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 80V; 0.5A; reel,tape
Case: SOD123
Capacitance: 15pF
Max. off-state voltage: 80V
Max. forward voltage: 0.8V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 14A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 80V; 0.5A; reel,tape
Case: SOD123
Capacitance: 15pF
Max. off-state voltage: 80V
Max. forward voltage: 0.8V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 14A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 873 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.46 грн |
54+ | 6.95 грн |
77+ | 4.89 грн |
100+ | 4.19 грн |
409+ | 2.16 грн |
BCX5210TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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BCX52TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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PAM2320BECADJR |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; PSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: PSOP8
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; PSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: PSOP8
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
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B0540WS-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.285V
Max. forward impulse current: 3A
Kind of package: reel; tape
Power dissipation: 235mW
Capacitance: 125pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.285V
Max. forward impulse current: 3A
Kind of package: reel; tape
Power dissipation: 235mW
Capacitance: 125pF
на замовлення 1084 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 16.90 грн |
40+ | 9.57 грн |
100+ | 6.20 грн |
304+ | 2.88 грн |
835+ | 2.72 грн |
BAS40-06Q-13-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
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BAS40-06Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
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BAS40-06T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
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ZVN2106GTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 635 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 83.72 грн |
10+ | 49.71 грн |
38+ | 23.55 грн |
102+ | 22.28 грн |
B120-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
на замовлення 4320 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 13.68 грн |
40+ | 9.34 грн |
100+ | 6.02 грн |
294+ | 2.98 грн |
806+ | 2.82 грн |
DMP4015SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -100A
Mounting: SMD
Case: PowerDI®5060-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -100A
Mounting: SMD
Case: PowerDI®5060-8
на замовлення 2386 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.06 грн |
10+ | 46.12 грн |
40+ | 22.13 грн |
109+ | 20.86 грн |
DMT6017LFV-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Gate charge: 15.3nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 140A
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Gate charge: 15.3nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 140A
Polarisation: unipolar
Mounting: SMD
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SDT10A100P5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.24kA
Leakage current: 20mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Max. off-state voltage: 100V
Max. forward voltage: 0.68V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.24kA
Leakage current: 20mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Max. off-state voltage: 100V
Max. forward voltage: 0.68V
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DESD3V3E1BL-7B |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; bidirectional; DFN1006-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3.8V; bidirectional; DFN1006-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 3.8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
на замовлення 9974 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.30 грн |
47+ | 8.10 грн |
100+ | 4.04 грн |
449+ | 1.95 грн |
1232+ | 1.85 грн |
SMAJ60A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 17.71 грн |
33+ | 11.51 грн |
43+ | 8.70 грн |
100+ | 5.50 грн |
215+ | 4.06 грн |
591+ | 3.83 грн |
SMAJ64A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 71.1÷78.6V; 3.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 71.1÷78.6V; 3.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ16CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4088 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 13.68 грн |
40+ | 9.34 грн |
100+ | 5.96 грн |
217+ | 4.08 грн |
595+ | 3.86 грн |
DXT13003DG-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 1.3A; 3W; SOT223
Frequency: 4MHz
Collector-emitter voltage: 450V
Current gain: 5...40
Collector current: 1.3A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Mounting: SMD
Case: SOT223
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 1.3A; 3W; SOT223
Frequency: 4MHz
Collector-emitter voltage: 450V
Current gain: 5...40
Collector current: 1.3A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Mounting: SMD
Case: SOT223
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KBP310G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 90A; flat
Case: KBP
Kind of package: tube
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 90A
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 90A; flat
Case: KBP
Kind of package: tube
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 90A
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Leads: flat pin
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74LVC125AT14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LVC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Number of channels: 4
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: LVC
Mounting: SMD
Operating temperature: -40...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LVC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Number of channels: 4
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: LVC
Mounting: SMD
Operating temperature: -40...125°C
на замовлення 921 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 25.76 грн |
27+ | 14.05 грн |
100+ | 10.09 грн |
154+ | 5.83 грн |
423+ | 5.46 грн |
74LVC125AS14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: SO14
Supply voltage: 1.65...5.5V DC
Number of channels: 4
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Mounting: SMD
Operating temperature: -40...150°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Case: SO14
Supply voltage: 1.65...5.5V DC
Number of channels: 4
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Family: LVC
Mounting: SMD
Operating temperature: -40...150°C
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MMBT5551Q-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100...300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100...300MHz
Quantity in set/package: 3000pcs.
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MMBT5401Q-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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MMBT5401-13-F |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Quantity in set/package: 10000pcs.
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AZ23C18-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Type of diode: Zener
Semiconductor structure: common anode; double
Zener voltage: 18V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Type of diode: Zener
Semiconductor structure: common anode; double
Zener voltage: 18V
на замовлення 5619 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.24 грн |
70+ | 5.38 грн |
93+ | 4.05 грн |
106+ | 3.54 грн |
508+ | 1.76 грн |
1397+ | 1.67 грн |
DPLS4140E-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1W; SOT223
Mounting: SMD
Collector-emitter voltage: 140V
Current gain: 12...300
Collector current: 4A
Pulsed collector current: 10A
Type of transistor: PNP
Frequency: 150MHz
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Case: SOT223
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1W; SOT223
Mounting: SMD
Collector-emitter voltage: 140V
Current gain: 12...300
Collector current: 4A
Pulsed collector current: 10A
Type of transistor: PNP
Frequency: 150MHz
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Case: SOT223
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BC807-40-13-F |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
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BC807-40Q-13-F |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Quantity in set/package: 10000pcs.
Pulsed collector current: 1A
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BC807-40Q-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
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BC807-40W-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
на замовлення 5900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 17.71 грн |
40+ | 9.42 грн |
100+ | 4.08 грн |
551+ | 1.60 грн |
1512+ | 1.51 грн |
DSS2515M-7 |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 90...200
Collector current: 0.5A
Pulsed collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 90...200
Collector current: 0.5A
Pulsed collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
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DSS2515M-7B |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 90...200
Collector current: 0.5A
Pulsed collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 90...200
Collector current: 0.5A
Pulsed collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 10000pcs.
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DSS2540M-7B |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
Collector-emitter voltage: 40V
Current gain: 50...200
Collector current: 0.5A
Pulsed collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
Collector-emitter voltage: 40V
Current gain: 50...200
Collector current: 0.5A
Pulsed collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 10000pcs.
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ULN2004AS16-13 |
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Виробник: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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BC848A-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC848AW-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC848B-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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MMBT2222A-13-F |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.8A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.8A
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MMBT2222ALP4-7B |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.8A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.8A
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MMBT2222AQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.8A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.8A
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SMAJ12AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.
SMAJ12CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.