Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78798) > Сторінка 1276 з 1314
Фото | Назва | Виробник | Інформація |
Доступність |
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2N7002DWS-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 247mA Power dissipation: 0.37W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.4nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 1.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BAV99Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MMDT3904-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BAW56DW-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BAW56DWQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BAW56HDW-13 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BAW56HDWQ-13 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RS1MDFQ-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: D-FLAT Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RS1MEWFQ-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FRS1ME-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: DO219AA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FRS1MEQ-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: DO219AA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MUR120-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MMDT2222A-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT363 Current gain: 35...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ18CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ15CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DDTC144VCA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DXT2222A-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1.2W Case: SOT89 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 2500pcs. Pulsed collector current: 0.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DZT2222A-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.83W Case: SOT223 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 2500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMAJ24CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SMAJ24CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ULN2002AS16-13 | DIODES INCORPORATED |
![]() Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...105°C Application: for inductive load Input voltage: 30V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ26AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
P6SMAJ26ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 14.2A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMC2038LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.1/-4.5A Power dissipation: 1.1W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.035/0.074Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 1258 шт: термін постачання 21-30 дні (днів) |
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BCP5510TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 63...160 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 337 шт: термін постачання 21-30 дні (днів) |
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BCP55TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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DMG2305UX-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23 Drain-source voltage: -20V Drain current: -3.3A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SOT23 |
на замовлення 2742 шт: термін постачання 21-30 дні (днів) |
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PAM2305AABADJ | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz Frequency: 1.5MHz Output current: 1A Type of integrated circuit: PMIC Input voltage: 2.5...5.5V DC Efficiency: 96% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Operating temperature: -40...85°C Case: TSOT25 |
на замовлення 332 шт: термін постачання 21-30 дні (днів) |
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SMBJ15AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DDTC114EUAQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Application: automotive industry Current gain: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BCX5316QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: SOT89 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz Application: automotive industry Power dissipation: 2W Pulsed collector current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ16AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...20.5V Max. forward impulse current: 23.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ZVP3310FTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -1.2A; 0.33W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -100V Drain current: -1.2A On-state resistance: 20Ω Type of transistor: P-MOSFET Power dissipation: 0.33W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 193 шт: термін постачання 21-30 дні (днів) |
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AP22815AWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Output current: 3A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOT5 On-state resistance: 40mΩ Supply voltage: 2.7...5.5V DC Active logical level: high Kind of integrated circuit: high-side; USB switch Kind of package: reel; tape |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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ZXMHC10A07N8TC | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 0.9/-0.7A Power dissipation: 0.87W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.9/1.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge |
на замовлення 2074 шт: термін постачання 21-30 дні (днів) |
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ZXMHC3F381N8TC | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 3.98/-3.36A Power dissipation: 0.87W Case: SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Pulsed drain current: 22.9...-19.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BZT52C5V1Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BZT52C5V1TQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BCP5116TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223 Mounting: SMD Collector-emitter voltage: 45V Case: SOT223 Frequency: 150MHz Current gain: 100...250 Collector current: 1A Type of transistor: PNP Power dissipation: 2W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 1000pcs. |
на замовлення 2539 шт: термін постачання 21-30 дні (днів) |
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BCP51TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 1478 шт: термін постачання 21-30 дні (днів) |
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BCP5110TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223 Mounting: SMD Type of transistor: PNP Power dissipation: 2W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 1000pcs. Case: SOT223 Frequency: 150MHz Collector-emitter voltage: 45V Current gain: 63...160 Collector current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
74LVC07AS14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 6; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Operating temperature: -40...150°C Case: SO14 Supply voltage: 1.65...5.5V DC Number of channels: 6 Kind of output: open drain Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: buffer Family: LVC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMC6040SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 5.1/-3.9A Power dissipation: 1.56W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/110mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 1976 шт: термін постачання 21-30 дні (днів) |
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RS3M-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS78L15RTR-E1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.8V Output voltage: 15V Output current: 0.1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Input voltage: 17.5...30V Manufacturer series: AS78LXX |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS78L15RTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.8V Output voltage: 15V Output current: 0.1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Input voltage: 17.5...30V Manufacturer series: AS78LXX |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZT52C3V6-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3.6V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 4273 шт: термін постачання 21-30 дні (днів) |
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BZT52C3V6-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 7430 шт: термін постачання 21-30 дні (днів) |
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AS7818ADTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 18V; 1A; DPAK; SMD; AS78XXA Operating temperature: -40...125°C Case: DPAK Tolerance: ±4% Output voltage: 18V Output current: 1A Voltage drop: 2V Type of integrated circuit: voltage regulator Number of channels: 1 Kind of package: reel; tape Manufacturer series: AS78XXA Kind of voltage regulator: fixed; linear Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AS393AMTR-G1 | DIODES INCORPORATED |
![]() Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; 200nA Type of integrated circuit: comparator Kind of comparator: precision Number of comparators: 2 Mounting: SMT Case: SO8 Operating temperature: -40...85°C Input offset voltage: 5mV Kind of package: reel; tape Kind of output: open collector Input offset current: 200nA Voltage supply range: ± 1...18V DC; 2...36V DC |
на замовлення 1343 шт: термін постачання 21-30 дні (днів) |
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SMAJ28CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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APX809S-29SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1...5.5V DC Case: SOT23 Operating temperature: -40...125°C Mounting: SMD DC supply current: 7µA Maximum output current: 20mA Threshold on-voltage: 2.93V Kind of package: reel; tape Delay time: 240ms |
на замовлення 2009 шт: термін постачання 21-30 дні (днів) |
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APX809-23SAG-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD Threshold on-voltage: 2.25V Kind of package: reel; tape DC supply current: 30µA Delay time: 200ms Maximum output current: 20mA |
на замовлення 2816 шт: термін постачання 21-30 дні (днів) |
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APX809S-23SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1...5.5V DC Case: SOT23 Operating temperature: -40...125°C Mounting: SMD DC supply current: 7µA Maximum output current: 20mA Threshold on-voltage: 2.25V Kind of package: reel; tape Delay time: 240ms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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APX809S-31SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1...5.5V DC Case: SOT23 Operating temperature: -40...125°C Mounting: SMD DC supply current: 7µA Maximum output current: 20mA Threshold on-voltage: 3.08V Kind of package: reel; tape Delay time: 240ms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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APX809-44SAG-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD DC supply current: 30µA Maximum output current: 20mA Threshold on-voltage: 4.38V Kind of package: reel; tape Delay time: 200ms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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APX809S-26SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1...5.5V DC Case: SOT23 Operating temperature: -40...125°C Mounting: SMD DC supply current: 7µA Maximum output current: 20mA Threshold on-voltage: 2.63V Kind of package: reel; tape Delay time: 240ms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMC4559DN8TC | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 3.9/-4.7A Power dissipation: 2.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.055/0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCX55TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Mounting: SMD Quantity in set/package: 1000pcs. Frequency: 150MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MMBD4148TW-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: triple independent Features of semiconductor devices: small signal Case: SOT363 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
2N7002DWS-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
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В кошику
од. на суму грн.
BAV99Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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В кошику
од. на суму грн.
MMDT3904-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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В кошику
од. на суму грн.
BAW56DW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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В кошику
од. на суму грн.
BAW56DWQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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В кошику
од. на суму грн.
BAW56HDW-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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В кошику
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BAW56HDWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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од. на суму грн.
RS1MDFQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Kind of package: reel; tape
Application: automotive industry
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RS1MEWFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
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FRS1ME-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
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FRS1MEQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Application: automotive industry
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MUR120-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
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MMDT2222A-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
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SMBJ18CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ15CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DDTC144VCA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
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DXT2222A-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
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DZT2222A-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.83W
Case: SOT223
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 830mW; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.83W
Case: SOT223
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
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SMAJ24CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ24CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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ULN2002AS16-13 |
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Виробник: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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SMAJ26AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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P6SMAJ26ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMC2038LVT-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 1258 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.52 грн |
25+ | 15.29 грн |
50+ | 11.01 грн |
100+ | 9.48 грн |
142+ | 6.27 грн |
390+ | 5.96 грн |
BCP5510TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 337 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.53 грн |
54+ | 7.11 грн |
69+ | 5.61 грн |
100+ | 5.14 грн |
257+ | 3.47 грн |
BCP55TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.58 грн |
36+ | 10.86 грн |
DMG2305UX-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Drain-source voltage: -20V
Drain current: -3.3A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Drain-source voltage: -20V
Drain current: -3.3A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
на замовлення 2742 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.00 грн |
46+ | 8.33 грн |
63+ | 6.09 грн |
100+ | 5.33 грн |
260+ | 3.47 грн |
713+ | 3.28 грн |
2500+ | 3.16 грн |
PAM2305AABADJ |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Frequency: 1.5MHz
Output current: 1A
Type of integrated circuit: PMIC
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOT25
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Frequency: 1.5MHz
Output current: 1A
Type of integrated circuit: PMIC
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOT25
на замовлення 332 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.34 грн |
13+ | 30.96 грн |
52+ | 17.51 грн |
142+ | 16.51 грн |
SMBJ15AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DDTC114EUAQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
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BCX5316QTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Power dissipation: 2W
Pulsed collector current: 2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Power dissipation: 2W
Pulsed collector current: 2A
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SMBJ16AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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ZVP3310FTA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.2A; 0.33W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -1.2A
On-state resistance: 20Ω
Type of transistor: P-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.2A; 0.33W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -1.2A
On-state resistance: 20Ω
Type of transistor: P-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 193 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.40 грн |
15+ | 26.22 грн |
65+ | 13.91 грн |
177+ | 13.15 грн |
AP22815AWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT5
On-state resistance: 40mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT5
On-state resistance: 40mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.98 грн |
10+ | 41.28 грн |
25+ | 37.00 грн |
31+ | 29.51 грн |
84+ | 27.90 грн |
1000+ | 27.45 грн |
3000+ | 26.83 грн |
ZXMHC10A07N8TC |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
на замовлення 2074 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 83.98 грн |
10+ | 65.29 грн |
20+ | 46.86 грн |
53+ | 44.34 грн |
500+ | 42.66 грн |
ZXMHC3F381N8TC |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
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BZT52C5V1Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C5V1TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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BCP5116TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 45V
Case: SOT223
Frequency: 150MHz
Current gain: 100...250
Collector current: 1A
Type of transistor: PNP
Power dissipation: 2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 45V
Case: SOT223
Frequency: 150MHz
Current gain: 100...250
Collector current: 1A
Type of transistor: PNP
Power dissipation: 2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
на замовлення 2539 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
26+ | 14.83 грн |
100+ | 7.98 грн |
268+ | 3.36 грн |
736+ | 3.18 грн |
BCP51TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 1478 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.23 грн |
34+ | 11.39 грн |
100+ | 7.10 грн |
247+ | 3.62 грн |
678+ | 3.42 грн |
BCP5110TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Case: SOT223
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 63...160
Collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 2W; SOT223
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Case: SOT223
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 63...160
Collector current: 1A
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74LVC07AS14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 6; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO14
Supply voltage: 1.65...5.5V DC
Number of channels: 6
Kind of output: open drain
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer
Family: LVC
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 6; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO14
Supply voltage: 1.65...5.5V DC
Number of channels: 6
Kind of output: open drain
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer
Family: LVC
Mounting: SMD
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DMC6040SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/110mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/110mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1976 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 52.69 грн |
12+ | 34.10 грн |
49+ | 18.19 грн |
135+ | 17.20 грн |
1000+ | 16.51 грн |
RS3M-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
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AS78L15RTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 15V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 17.5...30V
Manufacturer series: AS78LXX
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 15V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 17.5...30V
Manufacturer series: AS78LXX
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AS78L15RTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 15V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 17.5...30V
Manufacturer series: AS78LXX
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 15V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 17.5...30V
Manufacturer series: AS78LXX
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BZT52C3V6-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 4273 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.23 грн |
74+ | 5.20 грн |
94+ | 4.10 грн |
141+ | 2.73 грн |
500+ | 1.64 грн |
811+ | 1.11 грн |
2227+ | 1.05 грн |
BZT52C3V6-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 7430 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.23 грн |
70+ | 5.50 грн |
140+ | 2.74 грн |
500+ | 1.98 грн |
715+ | 1.26 грн |
1964+ | 1.19 грн |
AS7818ADTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 1A; DPAK; SMD; AS78XXA
Operating temperature: -40...125°C
Case: DPAK
Tolerance: ±4%
Output voltage: 18V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: AS78XXA
Kind of voltage regulator: fixed; linear
Mounting: SMD
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 1A; DPAK; SMD; AS78XXA
Operating temperature: -40...125°C
Case: DPAK
Tolerance: ±4%
Output voltage: 18V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: AS78XXA
Kind of voltage regulator: fixed; linear
Mounting: SMD
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AS393AMTR-G1 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
на замовлення 1343 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
25+ | 15.82 грн |
29+ | 13.23 грн |
100+ | 9.79 грн |
148+ | 6.12 грн |
405+ | 5.81 грн |
1000+ | 5.58 грн |
SMAJ28CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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APX809S-29SA-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Delay time: 240ms
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Delay time: 240ms
на замовлення 2009 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
22+ | 17.58 грн |
100+ | 11.77 грн |
140+ | 6.42 грн |
384+ | 6.04 грн |
APX809-23SAG-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 2.25V
Kind of package: reel; tape
DC supply current: 30µA
Delay time: 200ms
Maximum output current: 20mA
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 2.25V
Kind of package: reel; tape
DC supply current: 30µA
Delay time: 200ms
Maximum output current: 20mA
на замовлення 2816 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.52 грн |
15+ | 25.99 грн |
19+ | 20.49 грн |
100+ | 9.48 грн |
122+ | 7.42 грн |
336+ | 6.96 грн |
1000+ | 6.73 грн |
APX809S-23SA-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Delay time: 240ms
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Delay time: 240ms
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APX809S-31SA-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 3.08V
Kind of package: reel; tape
Delay time: 240ms
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 3.08V
Kind of package: reel; tape
Delay time: 240ms
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APX809-44SAG-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Delay time: 200ms
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Delay time: 200ms
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APX809S-26SA-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Delay time: 240ms
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 7µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Delay time: 240ms
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ZXMC4559DN8TC |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.9/-4.7A
Power dissipation: 2.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.9/-4.7A
Power dissipation: 2.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BCX55TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
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MMBD4148TW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Kind of package: reel; tape
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од. на суму грн.