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DSS5220T-7 DIODES INCORPORATED DSS5220T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Collector-emitter voltage: 20V
Current gain: 150...225
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Power dissipation: 1.2W
Frequency: 100MHz
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DSS5220TQ-7 DIODES INCORPORATED DSS5220TQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23; automotive industry
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Collector-emitter voltage: 20V
Current gain: 150...225
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: PNP
Application: automotive industry
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Power dissipation: 1.2W
Frequency: 100MHz
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DSS5220V-7 DIODES INCORPORATED ds31660.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Collector-emitter voltage: 20V
Current gain: 60...220
Collector current: 2A
Pulsed collector current: 4A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Power dissipation: 0.6W
Frequency: 150MHz
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DSS5240TQ-7 DIODES INCORPORATED DSS5240TQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Collector-emitter voltage: 40V
Current gain: 100...300
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: PNP
Application: automotive industry
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Power dissipation: 0.73W
Frequency: 100MHz
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DSS5240V-7 DIODES INCORPORATED ds31673.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1.8A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Collector-emitter voltage: 40V
Current gain: 50...800
Collector current: 1.8A
Pulsed collector current: 3A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Power dissipation: 0.6W
Frequency: 150MHz
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AZ431LANTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LANTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LARTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LAZTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBKTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBNTR-E1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBZTR-G1 DIODES INCORPORATED AZ431L.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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ZXTD718MCTA DIODES INCORPORATED ZXTD718MC.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
на замовлення 2996 шт:
термін постачання 21-30 дні (днів)
8+56.35 грн
10+46.34 грн
35+25.64 грн
95+24.29 грн
1000+23.32 грн
Мінімальне замовлення: 8
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DDZ24CS-7 DIODES INCORPORATED ds30414.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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SMBJ5.0AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DPLS350E-13 DIODES INCORPORATED ds31230.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Collector-emitter voltage: 50V
Current gain: 100...200
Collector current: 3A
Pulsed collector current: 5A
Type of transistor: PNP
Case: SOT223
Mounting: SMD
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Frequency: 100MHz
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SMBJ28CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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BC857BSQ-7-F DIODES INCORPORATED ds30373.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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SMBJ30CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DPLS160-7 DIODES INCORPORATED ds31389.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23
Frequency: 150...220MHz
Collector-emitter voltage: 60V
Current gain: 100...325
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
Case: SOT23
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DPLS160V-7 DIODES INCORPORATED ds31251.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563
Frequency: 150...220MHz
Collector-emitter voltage: 60V
Current gain: 100...325
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
Case: SOT563
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DMN2016UTS-13 DIODES INCORPORATED ds31995.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.73A
Pulsed drain current: 36A
Power dissipation: 0.88W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN2019UTS-13 DIODES INCORPORATED DMN2019UTS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.3A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN21D2UFB-7 DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 1A
Power dissipation: 570mW
Case: X1-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 930pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN21D2UFB-7B DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 1A
Power dissipation: 570mW
Case: X1-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 930pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ13A-13-F SMBJ13A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14.4÷16.5V; 27.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 6003 шт:
термін постачання 21-30 дні (днів)
20+20.12 грн
27+14.28 грн
35+10.91 грн
100+6.80 грн
157+5.68 грн
431+5.38 грн
500+5.23 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
ES3BB-13-F ES3BB-13-F DIODES INCORPORATED ES3x_ES3xB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
на замовлення 1851 шт:
термін постачання 21-30 дні (днів)
9+46.69 грн
13+29.15 грн
55+16.00 грн
151+15.10 грн
1000+14.88 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ES3B-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
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GBJ2010-F DIODES INCORPORATED GBJ20005%7EGBJ2010.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 20A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GBU608 GBU608 DIODES INCORPORATED GBU6_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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RS1JDFQ-13 DIODES INCORPORATED RS1JDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: D-FLAT
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FRS1JE DIODES INCORPORATED FRS1JE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; DO219AA; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: DO219AA
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SMBJ33CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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MMBTA63-7-F DIODES INCORPORATED ds30055.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 5000...10000
Quantity in set/package: 3000pcs.
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
34+12.08 грн
52+7.33 грн
107+3.52 грн
500+2.34 грн
591+1.48 грн
1623+1.40 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
MMBTA64-7-F DIODES INCORPORATED ds30055.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 10000...20000
Quantity in set/package: 3000pcs.
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SMAJ15CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ15AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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DXT2907A-13 DIODES INCORPORATED ds30944.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
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SMBJ36CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ36AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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FZT653QTA DIODES INCORPORATED FZT653Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140...175MHz
Application: automotive industry
Pulsed collector current: 6A
Current gain: 25...300
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SBR20100CT DIODES INCORPORATED SBR20100CT%20N0911%20REV.A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20100CT-G DIODES INCORPORATED SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20100CTFP DIODES INCORPORATED SBR20100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20A60CTB DIODES INCORPORATED SBR20A60CT_CTB_CTFP.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
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SBR20A60CTBQ-13 DIODES INCORPORATED SBR20A60CTBQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Application: automotive industry
Type of diode: rectifying
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SBR20A60CTFP DIODES INCORPORATED SBR20A60CT_CTB_CTFP.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
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SMBJ30AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ24AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷30.7V; 15.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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FMMT558QTA FMMT558QTA DIODES INCORPORATED FMMT558.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Collector-emitter voltage: 400V
Current gain: 15...300
Collector current: 0.15A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
11+39.44 грн
15+25.49 грн
93+9.42 грн
255+8.90 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FMMTA42TA FMMTA42TA DIODES INCORPORATED FMMTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)
27+15.30 грн
36+10.54 грн
40+9.46 грн
100+7.09 грн
380+2.35 грн
1045+2.22 грн
Мінімальне замовлення: 27
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GBU402 GBU402 DIODES INCORPORATED GBU4_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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FMMT634QTA DIODES INCORPORATED FMMT634Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.806W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
Pulsed collector current: 5A
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DMP10H4D2S-7 DMP10H4D2S-7 DIODES INCORPORATED DMP10H4D2S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.21A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1995 шт:
термін постачання 21-30 дні (днів)
30+13.68 грн
43+8.90 грн
50+7.55 грн
100+5.91 грн
188+4.78 грн
516+4.48 грн
Мінімальне замовлення: 30
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2N7002DWK-7 DIODES INCORPORATED 2N7002DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Pulsed drain current: 1.1A
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.04nC
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2N7002DWQ-7-F 2N7002DWQ-7-F DIODES INCORPORATED 2N7002DW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Pulsed drain current: 0.8A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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2N7002DWS-7 DIODES INCORPORATED 2N7002DWS.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Pulsed drain current: 1.8A
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.4nC
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BAV99Q-7-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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MMDT3904-7-F DIODES INCORPORATED ds30088.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BAW56DW-7-F DIODES INCORPORATED ds30146.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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DSS5220T-7 DSS5220T.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Collector-emitter voltage: 20V
Current gain: 150...225
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Power dissipation: 1.2W
Frequency: 100MHz
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DSS5220TQ-7 DSS5220TQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 1.2W; SOT23; automotive industry
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Collector-emitter voltage: 20V
Current gain: 150...225
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: PNP
Application: automotive industry
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Power dissipation: 1.2W
Frequency: 100MHz
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DSS5220V-7 ds31660.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Collector-emitter voltage: 20V
Current gain: 60...220
Collector current: 2A
Pulsed collector current: 4A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Power dissipation: 0.6W
Frequency: 150MHz
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DSS5240TQ-7 DSS5240TQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Collector-emitter voltage: 40V
Current gain: 100...300
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: PNP
Application: automotive industry
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Power dissipation: 0.73W
Frequency: 100MHz
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DSS5240V-7 ds31673.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1.8A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Collector-emitter voltage: 40V
Current gain: 50...800
Collector current: 1.8A
Pulsed collector current: 3A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Power dissipation: 0.6W
Frequency: 150MHz
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AZ431LANTR-G1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LANTR-E1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LARTR-G1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LAZTR-E1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBKTR-G1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBNTR-E1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBZTR-G1 AZ431L.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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ZXTD718MCTA ZXTD718MC.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
на замовлення 2996 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.35 грн
10+46.34 грн
35+25.64 грн
95+24.29 грн
1000+23.32 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DDZ24CS-7 ds30414.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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SMBJ5.0AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DPLS350E-13 ds31230.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Collector-emitter voltage: 50V
Current gain: 100...200
Collector current: 3A
Pulsed collector current: 5A
Type of transistor: PNP
Case: SOT223
Mounting: SMD
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Frequency: 100MHz
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SMBJ28CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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BC857BSQ-7-F ds30373.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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SMBJ30CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DPLS160-7 ds31389.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23
Frequency: 150...220MHz
Collector-emitter voltage: 60V
Current gain: 100...325
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
Case: SOT23
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DPLS160V-7 ds31251.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563
Frequency: 150...220MHz
Collector-emitter voltage: 60V
Current gain: 100...325
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
Case: SOT563
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DMN2016UTS-13 ds31995.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.73A
Pulsed drain current: 36A
Power dissipation: 0.88W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN2019UTS-13 DMN2019UTS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.3A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN21D2UFB-7 DMN21D2UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 1A
Power dissipation: 570mW
Case: X1-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 930pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN21D2UFB-7B DMN21D2UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 1A
Power dissipation: 570mW
Case: X1-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 930pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ13A-13-F SMBJ_ser.pdf
SMBJ13A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14.4÷16.5V; 27.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 6003 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+20.12 грн
27+14.28 грн
35+10.91 грн
100+6.80 грн
157+5.68 грн
431+5.38 грн
500+5.23 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
ES3BB-13-F ES3x_ES3xB.pdf
ES3BB-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
на замовлення 1851 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+46.69 грн
13+29.15 грн
55+16.00 грн
151+15.10 грн
1000+14.88 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ES3B-13-F ds14003.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
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GBJ2010-F GBJ20005%7EGBJ2010.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 20A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GBU608 GBU6_ser.pdf
GBU608
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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RS1JDFQ-13 RS1JDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: D-FLAT
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FRS1JE FRS1JE.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; DO219AA; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: DO219AA
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SMBJ33CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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MMBTA63-7-F ds30055.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 5000...10000
Quantity in set/package: 3000pcs.
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+12.08 грн
52+7.33 грн
107+3.52 грн
500+2.34 грн
591+1.48 грн
1623+1.40 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
MMBTA64-7-F ds30055.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 10000...20000
Quantity in set/package: 3000pcs.
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SMAJ15CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ15AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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DXT2907A-13 ds30944.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
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SMBJ36CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ36AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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FZT653QTA FZT653Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140...175MHz
Application: automotive industry
Pulsed collector current: 6A
Current gain: 25...300
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SBR20100CT SBR20100CT%20N0911%20REV.A.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20100CT-G SBR20100.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20100CTFP SBR20100.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20A60CTB SBR20A60CT_CTB_CTFP.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
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SBR20A60CTBQ-13 SBR20A60CTBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Application: automotive industry
Type of diode: rectifying
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SBR20A60CTFP SBR20A60CT_CTB_CTFP.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
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SMBJ30AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ24AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷30.7V; 15.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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FMMT558QTA FMMT558.pdf
FMMT558QTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Collector-emitter voltage: 400V
Current gain: 15...300
Collector current: 0.15A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.44 грн
15+25.49 грн
93+9.42 грн
255+8.90 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FMMTA42TA FMMTA42.pdf
FMMTA42TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+15.30 грн
36+10.54 грн
40+9.46 грн
100+7.09 грн
380+2.35 грн
1045+2.22 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
GBU402 GBU4_ser.pdf
GBU402
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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FMMT634QTA FMMT634Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.806W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
Pulsed collector current: 5A
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DMP10H4D2S-7 DMP10H4D2S.pdf
DMP10H4D2S-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.21A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1995 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+13.68 грн
43+8.90 грн
50+7.55 грн
100+5.91 грн
188+4.78 грн
516+4.48 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
2N7002DWK-7 2N7002DWK.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Pulsed drain current: 1.1A
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.04nC
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2N7002DWQ-7-F 2N7002DW.pdf
2N7002DWQ-7-F
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Pulsed drain current: 0.8A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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2N7002DWS-7 2N7002DWS.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Pulsed drain current: 1.8A
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.4nC
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BAV99Q-7-F BAV99.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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MMDT3904-7-F ds30088.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BAW56DW-7-F ds30146.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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