Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78837) > Сторінка 1267 з 1314

Обрати Сторінку:   [  << Попередня Сторінка ]  1 131 262 393 524 655 786 917 1048 1179 1262 1263 1264 1265 1266 1267 1268 1269 1270 1271 1272 1310 1314  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
BAS21Q-13-F BAS21Q-13-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
на замовлення 3100 шт:
термін постачання 21-30 дні (днів)
150+2.93 грн
200+1.98 грн
500+1.75 грн
575+1.62 грн
1550+1.53 грн
Мінімальне замовлення: 150
В кошику  од. на суму  грн.
DMT6009LCT DIODES INCORPORATED DMT6009LCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Drain-source voltage: 60V
Drain current: 29.8A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
DMT6009LFG-13 DIODES INCORPORATED DMT6009LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 9A
On-state resistance: 11.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6009LK3-13 DIODES INCORPORATED DMT6009LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 10.6A
On-state resistance: 12.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6009LPS-13 DIODES INCORPORATED DMT6009LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 9.1A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 160A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6009LSS-13 DMT6009LSS-13 DIODES INCORPORATED DMT6009LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11.5A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6010LFG-13 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 25A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6010LFG-7 DIODES INCORPORATED DMT6010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6010LPS-13 DIODES INCORPORATED DMT6010LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 125A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6011LSS-13 DMT6011LSS-13 DIODES INCORPORATED DMT6011LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.5A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 85A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6012LSS-13 DMT6012LSS-13 DIODES INCORPORATED DMT6012LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.4A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.84W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 65A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6013LSS-13 DMT6013LSS-13 DIODES INCORPORATED DMT6013LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
DMT6015LFV-7 DIODES INCORPORATED DMT6015LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 18.9nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 60A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BC847CQ-7-F BC847CQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC847CT-7-F BC847CT-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 1173 шт:
термін постачання 21-30 дні (днів)
30+14.00 грн
50+7.80 грн
64+6.04 грн
148+2.58 грн
670+1.34 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BC847CW-13-F BC847CW-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC847CW-7-F BC847CW-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
на замовлення 2058 шт:
термін постачання 21-30 дні (днів)
46+9.06 грн
63+6.12 грн
76+5.05 грн
145+2.65 грн
726+1.23 грн
1997+1.16 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BAT54STQ-7-F BAT54STQ-7-F DIODES INCORPORATED BAT54TQ-STQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BAT54SW-13-F BAT54SW-13-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику  од. на суму  грн.
BAT54SW-7-F
+1
 		BAT54SW-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 1768 шт:
термін постачання 21-30 дні (днів)
39+10.70 грн
58+6.65 грн
70+5.50 грн
100+3.99 грн
531+1.68 грн
1458+1.59 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BAT54SWQ-7-F BAT54SWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
39+10.70 грн
58+6.65 грн
74+5.20 грн
100+4.62 грн
351+2.55 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
B240-13-F B240-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED875B2BD648A18&compId=B220A_B260A.pdf?ci_sign=6f5691aed402e8f101ce43ea1c2ccec074342381 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BC847BT-7-F BC847BT-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 19159 шт:
термін постачання 21-30 дні (днів)
46+9.06 грн
72+5.35 грн
104+3.68 грн
125+3.07 грн
500+1.80 грн
698+1.28 грн
1918+1.21 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
DMTH6004SK3Q-13 DMTH6004SK3Q-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CAA0E62B1A38BF&compId=DMTH6004SK3Q.pdf?ci_sign=44945004b091d05cf2809c979a26c92b13976565 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.9W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1170 шт:
термін постачання 21-30 дні (днів)
5+82.33 грн
6+66.51 грн
16+58.87 грн
43+55.81 грн
500+53.51 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
PAM8620TR DIODES INCORPORATED PAM8620.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Case: QFN32
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
Integrated circuit features: low distortion THD; low noise; stereo
Amplifier class: D
Voltage supply range: 8...26V DC
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
BAV99Q-13-F BAV99Q-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
BAV99T-7-F BAV99T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
20+21.41 грн
35+11.01 грн
100+5.53 грн
447+2.00 грн
1227+1.89 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMP3098LSD-13 DMP3098LSD-13 DIODES INCORPORATED ds31448.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Case: SO8
Drain-source voltage: -30V
Drain current: -3.3A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -15A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
MBRD20100CT-13 DIODES INCORPORATED MBRD20100CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ12CA-13-F SMBJ12CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2533 шт:
термін постачання 21-30 дні (днів)
17+24.70 грн
24+16.13 грн
100+10.93 грн
159+5.66 грн
435+5.35 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
HD01-T HD01-T DIODES INCORPORATED HD01.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Case: MiniDIP
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
на замовлення 3133 шт:
термін постачання 21-30 дні (днів)
13+33.76 грн
21+18.58 грн
100+12.54 грн
103+8.72 грн
282+8.26 грн
3000+7.95 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BAT54AWQ-7-F BAT54AWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
ZTL431AQFTA ZTL431AQFTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
на замовлення 3045 шт:
термін постачання 21-30 дні (днів)
13+32.11 грн
22+17.89 грн
25+15.44 грн
100+12.38 грн
108+8.26 грн
297+7.80 грн
3000+7.57 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
LMV358M8G-13 LMV358M8G-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE791EF3ADA67AEC746&compId=LMV321_358.pdf?ci_sign=8bc5fa44121e5e1b26868b38723c8ee77bb42ffc Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
7+60.10 грн
10+38.99 грн
12+32.57 грн
90+10.01 грн
246+9.40 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FZT600TA FZT600TA DIODES INCORPORATED FZT600A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Quantity in set/package: 1000pcs.
Case: SOT223
Frequency: 250MHz
Collector-emitter voltage: 140V
Collector current: 2A
Type of transistor: NPN
Power dissipation: 3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
7+67.51 грн
10+43.27 грн
44+20.72 грн
119+19.57 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ZTX653 ZTX653 DIODES INCORPORATED ZTX653.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 175MHz
на замовлення 4142 шт:
термін постачання 21-30 дні (днів)
7+60.92 грн
36+25.23 грн
98+23.70 грн
2000+22.93 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ZTX653STZ ZTX653STZ DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5DB578F0975EA&compId=ZTX653.pdf?ci_sign=80c3b15437df6d32c758b0ee3c435ca468645edb Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 175MHz
на замовлення 1624 шт:
термін постачання 21-30 дні (днів)
6+73.27 грн
10+49.00 грн
36+25.30 грн
98+23.85 грн
1000+23.24 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DMG6402LVT-7 DMG6402LVT-7 DIODES INCORPORATED DMG6402LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 2330 шт:
термін постачання 21-30 дні (днів)
15+27.99 грн
24+16.44 грн
30+13.07 грн
100+9.25 грн
169+5.27 грн
466+4.97 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
ZTL432AFTA ZTL432AFTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 1544 шт:
термін постачання 21-30 дні (днів)
14+29.64 грн
26+15.14 грн
100+9.79 грн
120+7.42 грн
330+7.03 грн
1000+6.80 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMAJ58CA-13-F SMAJ58CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 3235 шт:
термін постачання 21-30 дні (днів)
18+23.05 грн
26+15.06 грн
34+11.31 грн
100+7.19 грн
202+4.43 грн
556+4.20 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMT3020LFDB-13 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDB-7 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDBQ-13 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDF-13 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDF-7 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDFQ-13 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDFQ-7 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LSDQ-13 DMT3020LSDQ-13 DIODES INCORPORATED DMT3020LSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: SO8
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020UFDB-13 DIODES INCORPORATED DMT3020UFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT30M9LPS-13 DIODES INCORPORATED DMT30M9LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 160.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
товару немає в наявності
В кошику  од. на суму  грн.
74HCT138S16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F7C0D3&compId=74HCT138.pdf?ci_sign=5049214ed0155bd6174afa4cdfbf87e78716a93a Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
74HCT138T16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F8C0D3&compId=74HCT138.pdf?ci_sign=50ca252984f838069f1cdd7bc362472180881949 Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: TSSOP16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BC857BT-7-F BC857BT-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEAEB7A17DF3D1&compId=BC857T.pdf?ci_sign=936166c4110eb57d80b119c6b33eed7e0c3fdf2e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 8057 шт:
термін постачання 21-30 дні (днів)
39+10.70 грн
61+6.27 грн
76+5.05 грн
156+2.46 грн
673+1.33 грн
1850+1.25 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BC857BW-7-F BC857BW-7-F DIODES INCORPORATED BC856AW-BC858CW.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
на замовлення 5313 шт:
термін постачання 21-30 дні (днів)
50+8.23 грн
84+4.59 грн
116+3.32 грн
133+2.87 грн
500+2.03 грн
730+1.22 грн
2010+1.15 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
ADTC114EUAQ-7 ADTC114EUAQ-7 DIODES INCORPORATED ADTC114EUAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
товару немає в наявності
В кошику  од. на суму  грн.
DDTC114EUA-7-F DDTC114EUA-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986AC464C6C3878BF&compId=DDTCxxxUA.pdf?ci_sign=1d714a1f0503ba48b6e9b2d985323bd175e64060 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
на замовлення 4864 шт:
термін постачання 21-30 дні (днів)
52+8.07 грн
80+4.82 грн
96+4.01 грн
133+2.89 грн
554+1.61 грн
1523+1.53 грн
3000+1.48 грн
Мінімальне замовлення: 52
В кошику  од. на суму  грн.
AP2138N-3.0TRG1 AP2138N-3.0TRG1 DIODES INCORPORATED AP2138-9.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT23
Tolerance: ±2%
Output voltage: 3V
Output current: 0.25A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Kind of package: reel; tape
Manufacturer series: AP2138
Kind of voltage regulator: fixed; LDO; linear
на замовлення 1472 шт:
термін постачання 21-30 дні (днів)
12+34.58 грн
20+19.57 грн
25+16.36 грн
100+12.54 грн
141+6.35 грн
386+6.04 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMMT3904W-7-F DMMT3904W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E3058A3C4C20D3&compId=DMMT3904W.pdf?ci_sign=8125a385a972dca67d2b8016e481af976b072396 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
на замовлення 3050 шт:
термін постачання 21-30 дні (днів)
20+20.58 грн
31+12.38 грн
50+9.79 грн
100+8.94 грн
153+5.89 грн
421+5.58 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMG4800LSD-13 DMG4800LSD-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 8.4A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
10+44.46 грн
14+28.97 грн
62+14.45 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
74LVC2G14DW-7 74LVC2G14DW-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109D54D560D3&compId=74LVC2G14.pdf?ci_sign=fbc441d1a2469c3861b352c3a330b589fc2c8533 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SOT363
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BAS21Q-13-F Ds12004.pdf
BAS21Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
на замовлення 3100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
150+2.93 грн
200+1.98 грн
500+1.75 грн
575+1.62 грн
1550+1.53 грн
Мінімальне замовлення: 150
В кошику  од. на суму  грн.
DMT6009LCT DMT6009LCT.pdf
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Drain-source voltage: 60V
Drain current: 29.8A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
DMT6009LFG-13 DMT6009LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 9A
On-state resistance: 11.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6009LK3-13 DMT6009LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 10.6A
On-state resistance: 12.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6009LPS-13 DMT6009LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 9.1A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 160A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6009LSS-13 DMT6009LSS.pdf
DMT6009LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11.5A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6010LFG-13 DMT6010LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 25A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6010LFG-7 DMT6010LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6010LPS-13 DMT6010LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 125A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6011LSS-13 DMT6011LSS.pdf
DMT6011LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.5A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 85A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6012LSS-13 DMT6012LSS.pdf
DMT6012LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.4A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.84W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 65A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DMT6013LSS-13 DMT6013LSS.pdf
DMT6013LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
DMT6015LFV-7 DMT6015LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 18.9nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 60A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BC847CQ-7-F ds11108.pdf
BC847CQ-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC847CT-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d
BC847CT-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 1173 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.00 грн
50+7.80 грн
64+6.04 грн
148+2.58 грн
670+1.34 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BC847CW-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7
BC847CW-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
BC847CW-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BE27D49BD013D1&compId=BC846_7_8W.pdf?ci_sign=345ef7b33ea3540ab03aec070af17430e6e66ab7
BC847CW-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
на замовлення 2058 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.06 грн
63+6.12 грн
76+5.05 грн
145+2.65 грн
726+1.23 грн
1997+1.16 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BAT54STQ-7-F BAT54TQ-STQ.pdf
BAT54STQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BAT54SW-13-F BAT54W_AW_CW_SW.pdf
BAT54SW-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику  од. на суму  грн.
BAT54SW-7-F BAT54W_AW_CW_SW.pdf
BAT54SW-7-F
+1
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 1768 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+10.70 грн
58+6.65 грн
70+5.50 грн
100+3.99 грн
531+1.68 грн
1458+1.59 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BAT54SWQ-7-F SWQ.pdf
BAT54SWQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+10.70 грн
58+6.65 грн
74+5.20 грн
100+4.62 грн
351+2.55 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
B240-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED875B2BD648A18&compId=B220A_B260A.pdf?ci_sign=6f5691aed402e8f101ce43ea1c2ccec074342381
B240-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BC847BT-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED7FF61E7108A18&compId=BC847xT.pdf?ci_sign=24a2c29b5ce6a8d662d0d43c624ce7b6b8ea8a2d
BC847BT-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 19159 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.06 грн
72+5.35 грн
104+3.68 грн
125+3.07 грн
500+1.80 грн
698+1.28 грн
1918+1.21 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
DMTH6004SK3Q-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986CAA0E62B1A38BF&compId=DMTH6004SK3Q.pdf?ci_sign=44945004b091d05cf2809c979a26c92b13976565
DMTH6004SK3Q-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.9W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1170 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+82.33 грн
6+66.51 грн
16+58.87 грн
43+55.81 грн
500+53.51 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
PAM8620TR PAM8620.pdf
Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Case: QFN32
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
Integrated circuit features: low distortion THD; low noise; stereo
Amplifier class: D
Voltage supply range: 8...26V DC
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
BAV99Q-13-F BAV99.pdf
BAV99Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
BAV99T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
BAV99T-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.41 грн
35+11.01 грн
100+5.53 грн
447+2.00 грн
1227+1.89 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMP3098LSD-13 ds31448.pdf
DMP3098LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Case: SO8
Drain-source voltage: -30V
Drain current: -3.3A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -15A
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
MBRD20100CT-13 MBRD20100CT.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ12CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ12CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2533 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.70 грн
24+16.13 грн
100+10.93 грн
159+5.66 грн
435+5.35 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
HD01-T HD01.pdf
HD01-T
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Case: MiniDIP
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
на замовлення 3133 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.76 грн
21+18.58 грн
100+12.54 грн
103+8.72 грн
282+8.26 грн
3000+7.95 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BAT54AWQ-7-F SWQ.pdf
BAT54AWQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
ZTL431AQFTA pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded
ZTL431AQFTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
на замовлення 3045 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+32.11 грн
22+17.89 грн
25+15.44 грн
100+12.38 грн
108+8.26 грн
297+7.80 грн
3000+7.57 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
LMV358M8G-13 pVersion=0046&contRep=ZT&docId=005056AB752F1EE791EF3ADA67AEC746&compId=LMV321_358.pdf?ci_sign=8bc5fa44121e5e1b26868b38723c8ee77bb42ffc
LMV358M8G-13
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+60.10 грн
10+38.99 грн
12+32.57 грн
90+10.01 грн
246+9.40 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FZT600TA FZT600A.pdf
FZT600TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Quantity in set/package: 1000pcs.
Case: SOT223
Frequency: 250MHz
Collector-emitter voltage: 140V
Collector current: 2A
Type of transistor: NPN
Power dissipation: 3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.51 грн
10+43.27 грн
44+20.72 грн
119+19.57 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ZTX653 ZTX653.pdf
ZTX653
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 175MHz
на замовлення 4142 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+60.92 грн
36+25.23 грн
98+23.70 грн
2000+22.93 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ZTX653STZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5DB578F0975EA&compId=ZTX653.pdf?ci_sign=80c3b15437df6d32c758b0ee3c435ca468645edb
ZTX653STZ
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 175MHz
на замовлення 1624 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+73.27 грн
10+49.00 грн
36+25.30 грн
98+23.85 грн
1000+23.24 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DMG6402LVT-7 DMG6402LVT.pdf
DMG6402LVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 2330 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+27.99 грн
24+16.44 грн
30+13.07 грн
100+9.25 грн
169+5.27 грн
466+4.97 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
ZTL432AFTA pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84F31562F17F20C7&compId=ZTL431%2C432.pdf?ci_sign=00774d159c42e48604be9d430ea0ab015390bded
ZTL432AFTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 1544 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+29.64 грн
26+15.14 грн
100+9.79 грн
120+7.42 грн
330+7.03 грн
1000+6.80 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMAJ58CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ58CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 3235 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.05 грн
26+15.06 грн
34+11.31 грн
100+7.19 грн
202+4.43 грн
556+4.20 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMT3020LFDB-13 DMT3020LFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDB-7 DMT3020LFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDBQ-13 DMT3020LFDBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDF-13 DMT3020LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDF-7 DMT3020LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDFQ-13 DMT3020LFDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LFDFQ-7 DMT3020LFDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020LSDQ-13 DMT3020LSDQ.pdf
DMT3020LSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: SO8
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020UFDB-13 DMT3020UFDB.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Mounting: SMD
Case: U-DFN2020-6
товару немає в наявності
В кошику  од. на суму  грн.
DMT30M9LPS-13 DMT30M9LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 160.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
товару немає в наявності
В кошику  од. на суму  грн.
74HCT138S16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F7C0D3&compId=74HCT138.pdf?ci_sign=5049214ed0155bd6174afa4cdfbf87e78716a93a
Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
74HCT138T16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F8C0D3&compId=74HCT138.pdf?ci_sign=50ca252984f838069f1cdd7bc362472180881949
Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: TSSOP16
Number of inputs: 6
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Family: HCT
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BC857BT-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BEAEB7A17DF3D1&compId=BC857T.pdf?ci_sign=936166c4110eb57d80b119c6b33eed7e0c3fdf2e
BC857BT-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 8057 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+10.70 грн
61+6.27 грн
76+5.05 грн
156+2.46 грн
673+1.33 грн
1850+1.25 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BC857BW-7-F BC856AW-BC858CW.pdf
BC857BW-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
на замовлення 5313 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.23 грн
84+4.59 грн
116+3.32 грн
133+2.87 грн
500+2.03 грн
730+1.22 грн
2010+1.15 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
ADTC114EUAQ-7 ADTC114EUAQ.pdf
ADTC114EUAQ-7
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
товару немає в наявності
В кошику  од. на суму  грн.
DDTC114EUA-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE986AC464C6C3878BF&compId=DDTCxxxUA.pdf?ci_sign=1d714a1f0503ba48b6e9b2d985323bd175e64060
DDTC114EUA-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
на замовлення 4864 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
52+8.07 грн
80+4.82 грн
96+4.01 грн
133+2.89 грн
554+1.61 грн
1523+1.53 грн
3000+1.48 грн
Мінімальне замовлення: 52
В кошику  од. на суму  грн.
AP2138N-3.0TRG1 AP2138-9.pdf
AP2138N-3.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT23
Tolerance: ±2%
Output voltage: 3V
Output current: 0.25A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Kind of package: reel; tape
Manufacturer series: AP2138
Kind of voltage regulator: fixed; LDO; linear
на замовлення 1472 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+34.58 грн
20+19.57 грн
25+16.36 грн
100+12.54 грн
141+6.35 грн
386+6.04 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMMT3904W-7-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E3058A3C4C20D3&compId=DMMT3904W.pdf?ci_sign=8125a385a972dca67d2b8016e481af976b072396
DMMT3904W-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
на замовлення 3050 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+20.58 грн
31+12.38 грн
50+9.79 грн
100+8.94 грн
153+5.89 грн
421+5.58 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMG4800LSD-13 DMG4800LSD.pdf
DMG4800LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 8.4A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.46 грн
14+28.97 грн
62+14.45 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
74LVC2G14DW-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109D54D560D3&compId=74LVC2G14.pdf?ci_sign=fbc441d1a2469c3861b352c3a330b589fc2c8533
74LVC2G14DW-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SOT363
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 131 262 393 524 655 786 917 1048 1179 1262 1263 1264 1265 1266 1267 1268 1269 1270 1271 1272 1310 1314  [ Наступна Сторінка >> ]