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1N4934-T 1N4934-T DIODES INCORPORATED 1N4934_37.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
на замовлення 515 шт:
термін постачання 21-30 дні (днів)
58+7.11 грн
82+4.61 грн
114+3.33 грн
500+2.68 грн
Мінімальне замовлення: 58
В кошику  од. на суму  грн.
ZTX951 DIODES INCORPORATED ZTX951.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 4A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 120MHz
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)
5+84.66 грн
10+58.51 грн
27+34.02 грн
72+32.20 грн
2500+31.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ZTX951STZ DIODES INCORPORATED ZTX951.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 4A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 120MHz
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SMAZ5V1-13-F SMAZ5V1-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; 196mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 196mA
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
21+19.54 грн
32+12.17 грн
50+10.05 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
AP7387-33Y-13 AP7387-33Y-13 DIODES INCORPORATED AP7387.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5...60V
Manufacturer series: AP7387
на замовлення 1744 шт:
термін постачання 21-30 дні (днів)
8+51.28 грн
12+31.60 грн
25+28.72 грн
39+23.43 грн
106+22.15 грн
Мінімальне замовлення: 8
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AP130-33YG-13 AP130-33YG-13 DIODES INCORPORATED AP130.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.7...5.5V
на замовлення 2193 шт:
термін постачання 21-30 дні (днів)
8+53.73 грн
10+42.33 грн
66+13.91 грн
179+13.15 грн
Мінімальне замовлення: 8
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AP2115R5-3.3TRG1 AP2115R5-3.3TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5A-3.3TRG1 AP2115R5A-3.3TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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74LVC1G02FW4-7 DIODES INCORPORATED 74LVC1G02.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G02SE-7 DIODES INCORPORATED 74LVC1G02.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G02Z-7 DIODES INCORPORATED 74LVC1G02.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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RS2K-13-F RS2K-13-F DIODES INCORPORATED ds15004.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.3V
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 0.5µs
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: SMB
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
10+44.77 грн
14+28.12 грн
100+18.44 грн
110+8.24 грн
Мінімальне замовлення: 10
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LM2903AQTH-13 DIODES INCORPORATED LM2901Q_03Q.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; TSSOP8; reel,tape; Iio: 200pA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 0.2nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: TSSOP8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 4mV
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LM2903AS-13 DIODES INCORPORATED LM2901-03.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; Iio: 200pA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 0.2nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 4mV
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LM2903QM8-13 DIODES INCORPORATED LM2901Q_03Q.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; Iio: 200pA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 0.2nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: MSOP8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
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LM2903QTH-13 DIODES INCORPORATED LM2901Q_03Q.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; TSSOP8; reel,tape; Iio: 200pA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 0.2nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: TSSOP8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
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LM2903S-13 DIODES INCORPORATED LM2901-03.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; Iio: 200pA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 0.2nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
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AP7370-33SA-7 AP7370-33SA-7 DIODES INCORPORATED AP7370.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7370
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
на замовлення 651 шт:
термін постачання 21-30 дні (днів)
7+60.24 грн
10+38.70 грн
12+31.75 грн
83+10.66 грн
227+10.05 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMP3085LSD-13 DMP3085LSD-13 DIODES INCORPORATED DMP3085LSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
на замовлення 1484 шт:
термін постачання 21-30 дні (днів)
24+17.09 грн
35+10.96 грн
50+8.16 грн
100+7.33 грн
143+6.27 грн
391+5.90 грн
1000+5.67 грн
Мінімальне замовлення: 24
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BZT52C18TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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AP2112M-3.3TRG1 AP2112M-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Voltage drop: 0.4V
Type of integrated circuit: voltage regulator
Case: SO8
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 3.3V
Output current: 0.6A
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AP2112R5-3.3TRG1 AP2112R5-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Voltage drop: 0.4V
Type of integrated circuit: voltage regulator
Case: SOT89
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 3.3V
Output current: 0.6A
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AP2112R5A-3.3TRG1 AP2112R5A-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Voltage drop: 0.4V
Type of integrated circuit: voltage regulator
Case: SOT89
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 3.3V
Output current: 0.6A
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AP2112R5-1.2TRG1 AP2112R5-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Case: SOT89
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 1.2V
Output current: 0.6A
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SBR0240LP-7 SBR0240LP-7 DIODES INCORPORATED SBR0240LP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SBR®; SMD; 40V; 0.25A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Max. forward impulse current: 5A
Max. forward voltage: 0.59V
на замовлення 2150 шт:
термін постачання 21-30 дні (днів)
21+19.54 грн
30+12.62 грн
100+9.83 грн
105+8.47 грн
289+8.01 грн
500+7.94 грн
1000+7.63 грн
Мінімальне замовлення: 21
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SBR02U100LP-7 DIODES INCORPORATED SBR02U100LP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SBR®; SMD; 100V; 0.25A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Max. forward impulse current: 5A
Max. forward voltage: 0.8V
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SBR0220LP-7 DIODES INCORPORATED SBR0220LP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SBR®; SMD; 20V; 0.2A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.2A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Max. forward impulse current: 5A
Max. forward voltage: 0.48V
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SBR0220T5-7 DIODES INCORPORATED SBR0220T5.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.2A; SOD523; SBR®; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Technology: SBR®
Kind of package: reel; tape
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SBR0230T5-7 DIODES INCORPORATED SBR0230T5.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.2A; 5ns; SOD523; SBR®; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Technology: SBR®
Kind of package: reel; tape
Reverse recovery time: 5ns
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SBR0240LPW-7B DIODES INCORPORATED SBR0240LPW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 0.2A; 3.8ns; X1-DFN1006-2; SBR®
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Reverse recovery time: 3.8ns
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SBR0240LPWQ-7B DIODES INCORPORATED SBR0240LPWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 0.2A; 3.8ns; X1-DFN1006-2; SBR®
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 3.8ns
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SBR02M30LP-7 DIODES INCORPORATED SBR02M30LP.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.2A; X1-DFN1006-2; SBR®; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
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SBR02U100LPQ-7 DIODES INCORPORATED SBR02U100LPQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; X1-DFN1006-2; SBR®; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Application: automotive industry
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DMN65D8LFB-7 DIODES INCORPORATED DMN65D8LFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Power dissipation: 0.84W
Case: X1-DFN1006-3
Mounting: SMD
Gate charge: 870pC
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 0.31A
On-state resistance:
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DMN65D8LFB-7B DIODES INCORPORATED DMN65D8LFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Power dissipation: 0.84W
Case: X1-DFN1006-3
Mounting: SMD
Gate charge: 870pC
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 0.31A
On-state resistance:
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LM2901AQT14-13 DIODES INCORPORATED LM2901Q_03Q.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; TSSOP14; reel,tape; IB: 0.5uA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901AS14-13 DIODES INCORPORATED LM2901-03.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; SO14; reel,tape; Iio: 200pA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901AT14-13 DIODES INCORPORATED LM2901-03.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; TSSOP14; reel,tape; IB: 0.5uA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901QS14-13 DIODES INCORPORATED LM2901Q_03Q.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; SO14; reel,tape; Iio: 200pA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901QT14-13 DIODES INCORPORATED LM2901Q_03Q.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; TSSOP14; reel,tape; IB: 0.5uA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901S14-13 DIODES INCORPORATED LM2901-03.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; SO14; reel,tape; Iio: 200pA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901T14-13 DIODES INCORPORATED LM2901-03.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; TSSOP14; reel,tape; IB: 0.5uA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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AL9910-5S-13 AL9910-5S-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 7.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Mounting: SMD
Operating voltage: 7.5V DC
Integrated circuit features: linear dimming; PWM
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SMAJ33A-13-F SMAJ33A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 362 шт:
термін постачання 21-30 дні (днів)
32+13.02 грн
65+5.90 грн
199+4.57 грн
250+4.56 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SMAJ33AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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P4SMAJ33ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P6SMAJ33ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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74AHC32T14-13 DIODES INCORPORATED 74AHC32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Operating temperature: -40...150°C
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74AHC32S14-13 DIODES INCORPORATED 74AHC32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Operating temperature: -40...150°C
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KBP2005G KBP2005G DIODES INCORPORATED KBP2005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 65A; flat
Type of bridge rectifier: single-phase
Case: KBP
Leads: flat pin
Max. off-state voltage: 50V
Load current: 2A
Max. forward impulse current: 65A
Kind of package: tube
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
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KBP202G KBP202G DIODES INCORPORATED KBP2005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 65A; flat
Type of bridge rectifier: single-phase
Case: KBP
Leads: flat pin
Max. off-state voltage: 200V
Load current: 2A
Max. forward impulse current: 65A
Kind of package: tube
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
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DMN3025LFV-13 DIODES INCORPORATED DMN3025LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 9.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 55A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
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DMP3018SFV-13 DIODES INCORPORATED DMP3018SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
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DMP2010UFV-13 DIODES INCORPORATED DMP2010UFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Power dissipation: 2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 103nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -20V
Drain current: -40A
On-state resistance: 12.5mΩ
Type of transistor: P-MOSFET
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DMP3013SFV-13 DIODES INCORPORATED DMP3013SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.94W
Power dissipation: 1.94W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 33.7nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -30V
Drain current: -10A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
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DMP3036SFV-13 DIODES INCORPORATED DMP3036SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
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DMT2004UFV-13 DIODES INCORPORATED DMT2004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
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DMT35M7LFV-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W
Power dissipation: 1.98W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 61A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
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DESD32VS2SO-7 DESD32VS2SO-7 DIODES INCORPORATED DESD32VS2SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 34V; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 34V
Mounting: SMD
Case: SOT23
Max. off-state voltage: 32V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 42pF
на замовлення 2484 шт:
термін постачання 21-30 дні (днів)
11+39.07 грн
24+16.18 грн
35+10.88 грн
100+9.60 грн
113+7.86 грн
311+7.41 грн
Мінімальне замовлення: 11
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ZTX851 ZTX851 DIODES INCORPORATED ZTX851.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.2W
Case: TO92
Current gain: 25...300
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 130MHz
на замовлення 1284 шт:
термін постачання 21-30 дні (днів)
4+104.20 грн
10+64.10 грн
27+33.26 грн
73+31.45 грн
1000+30.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1N4934-T 1N4934_37.pdf
1N4934-T
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
на замовлення 515 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
58+7.11 грн
82+4.61 грн
114+3.33 грн
500+2.68 грн
Мінімальне замовлення: 58
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ZTX951 ZTX951.pdf
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 4A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 120MHz
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+84.66 грн
10+58.51 грн
27+34.02 грн
72+32.20 грн
2500+31.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ZTX951STZ ZTX951.pdf
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 4A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 120MHz
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SMAZ5V1-13-F SMAZx-13-F.pdf
SMAZ5V1-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; 196mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 196mA
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+19.54 грн
32+12.17 грн
50+10.05 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
AP7387-33Y-13 AP7387.pdf
AP7387-33Y-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5...60V
Manufacturer series: AP7387
на замовлення 1744 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+51.28 грн
12+31.60 грн
25+28.72 грн
39+23.43 грн
106+22.15 грн
Мінімальне замовлення: 8
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AP130-33YG-13 AP130.pdf
AP130-33YG-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.7...5.5V
на замовлення 2193 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+53.73 грн
10+42.33 грн
66+13.91 грн
179+13.15 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
AP2115R5-3.3TRG1 AP2115.pdf
AP2115R5-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5A-3.3TRG1 AP2115.pdf
AP2115R5A-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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74LVC1G02FW4-7 74LVC1G02.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G02SE-7 74LVC1G02.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G02Z-7 74LVC1G02.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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RS2K-13-F ds15004.pdf
RS2K-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.5A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.3V
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 0.5µs
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: SMB
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.77 грн
14+28.12 грн
100+18.44 грн
110+8.24 грн
Мінімальне замовлення: 10
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LM2903AQTH-13 LM2901Q_03Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; TSSOP8; reel,tape; Iio: 200pA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 0.2nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: TSSOP8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 4mV
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LM2903AS-13 LM2901-03.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; Iio: 200pA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 0.2nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 4mV
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LM2903QM8-13 LM2901Q_03Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; Iio: 200pA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 0.2nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: MSOP8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
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LM2903QTH-13 LM2901Q_03Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; TSSOP8; reel,tape; Iio: 200pA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 0.2nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: TSSOP8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
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LM2903S-13 LM2901-03.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; Iio: 200pA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 0.2nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
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AP7370-33SA-7 AP7370.pdf
AP7370-33SA-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7370
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
на замовлення 651 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+60.24 грн
10+38.70 грн
12+31.75 грн
83+10.66 грн
227+10.05 грн
Мінімальне замовлення: 7
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DMP3085LSD-13 DMP3085LSD.pdf
DMP3085LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
на замовлення 1484 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+17.09 грн
35+10.96 грн
50+8.16 грн
100+7.33 грн
143+6.27 грн
391+5.90 грн
1000+5.67 грн
Мінімальне замовлення: 24
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BZT52C18TQ-7-F ds30502.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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AP2112M-3.3TRG1 AP2112.pdf
AP2112M-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Voltage drop: 0.4V
Type of integrated circuit: voltage regulator
Case: SO8
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 3.3V
Output current: 0.6A
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AP2112R5-3.3TRG1 AP2112.pdf
AP2112R5-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Voltage drop: 0.4V
Type of integrated circuit: voltage regulator
Case: SOT89
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 3.3V
Output current: 0.6A
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AP2112R5A-3.3TRG1 AP2112.pdf
AP2112R5A-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Voltage drop: 0.4V
Type of integrated circuit: voltage regulator
Case: SOT89
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 3.3V
Output current: 0.6A
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AP2112R5-1.2TRG1 AP2112.pdf
AP2112R5-1.2TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Case: SOT89
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 1.2V
Output current: 0.6A
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SBR0240LP-7 SBR0240LP.pdf
SBR0240LP-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SBR®; SMD; 40V; 0.25A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Max. forward impulse current: 5A
Max. forward voltage: 0.59V
на замовлення 2150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+19.54 грн
30+12.62 грн
100+9.83 грн
105+8.47 грн
289+8.01 грн
500+7.94 грн
1000+7.63 грн
Мінімальне замовлення: 21
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SBR02U100LP-7 SBR02U100LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SBR®; SMD; 100V; 0.25A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Max. forward impulse current: 5A
Max. forward voltage: 0.8V
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SBR0220LP-7 SBR0220LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SBR®; SMD; 20V; 0.2A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.2A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Max. forward impulse current: 5A
Max. forward voltage: 0.48V
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SBR0220T5-7 SBR0220T5.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.2A; SOD523; SBR®; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Technology: SBR®
Kind of package: reel; tape
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SBR0230T5-7 SBR0230T5.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.2A; 5ns; SOD523; SBR®; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Technology: SBR®
Kind of package: reel; tape
Reverse recovery time: 5ns
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SBR0240LPW-7B SBR0240LPW.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 0.2A; 3.8ns; X1-DFN1006-2; SBR®
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Reverse recovery time: 3.8ns
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SBR0240LPWQ-7B SBR0240LPWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 0.2A; 3.8ns; X1-DFN1006-2; SBR®
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 3.8ns
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SBR02M30LP-7 SBR02M30LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.2A; X1-DFN1006-2; SBR®; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
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SBR02U100LPQ-7 SBR02U100LPQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; X1-DFN1006-2; SBR®; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Technology: SBR®
Kind of package: reel; tape
Application: automotive industry
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DMN65D8LFB-7 DMN65D8LFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Power dissipation: 0.84W
Case: X1-DFN1006-3
Mounting: SMD
Gate charge: 870pC
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 0.31A
On-state resistance:
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DMN65D8LFB-7B DMN65D8LFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Power dissipation: 0.84W
Case: X1-DFN1006-3
Mounting: SMD
Gate charge: 870pC
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 0.31A
On-state resistance:
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LM2901AQT14-13 LM2901Q_03Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; TSSOP14; reel,tape; IB: 0.5uA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901AS14-13 LM2901-03.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; SO14; reel,tape; Iio: 200pA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901AT14-13 LM2901-03.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; TSSOP14; reel,tape; IB: 0.5uA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901QS14-13 LM2901Q_03Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; SO14; reel,tape; Iio: 200pA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901QT14-13 LM2901Q_03Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; TSSOP14; reel,tape; IB: 0.5uA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901S14-13 LM2901-03.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; SO14; reel,tape; Iio: 200pA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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LM2901T14-13 LM2901-03.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; SMT; TSSOP14; reel,tape; IB: 0.5uA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input offset current: 0.2nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of output: open collector
Input bias current: 0.5µA
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AL9910-5S-13 AL9910_A.pdf
AL9910-5S-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 7.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Mounting: SMD
Operating voltage: 7.5V DC
Integrated circuit features: linear dimming; PWM
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SMAJ33A-13-F SMAJ_ser.pdf
SMAJ33A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 362 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.02 грн
65+5.90 грн
199+4.57 грн
250+4.56 грн
Мінімальне замовлення: 32
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SMAJ33AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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P4SMAJ33ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P6SMAJ33ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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74AHC32T14-13 74AHC32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Operating temperature: -40...150°C
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74AHC32S14-13 74AHC32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Operating temperature: -40...150°C
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KBP2005G KBP2005G_ser.pdf
KBP2005G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 65A; flat
Type of bridge rectifier: single-phase
Case: KBP
Leads: flat pin
Max. off-state voltage: 50V
Load current: 2A
Max. forward impulse current: 65A
Kind of package: tube
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
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KBP202G KBP2005G_ser.pdf
KBP202G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 65A; flat
Type of bridge rectifier: single-phase
Case: KBP
Leads: flat pin
Max. off-state voltage: 200V
Load current: 2A
Max. forward impulse current: 65A
Kind of package: tube
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
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DMN3025LFV-13 DMN3025LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 9.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 55A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
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DMP3018SFV-13 DMP3018SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
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DMP2010UFV-13 DMP2010UFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Power dissipation: 2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 103nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -20V
Drain current: -40A
On-state resistance: 12.5mΩ
Type of transistor: P-MOSFET
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DMP3013SFV-13 DMP3013SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.94W
Power dissipation: 1.94W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 33.7nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -30V
Drain current: -10A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
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DMP3036SFV-13 DMP3036SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
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DMT2004UFV-13 DMT2004UFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
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DMT35M7LFV-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W
Power dissipation: 1.98W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 61A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
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DESD32VS2SO-7 DESD32VS2SO.pdf
DESD32VS2SO-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 34V; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 34V
Mounting: SMD
Case: SOT23
Max. off-state voltage: 32V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 42pF
на замовлення 2484 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.07 грн
24+16.18 грн
35+10.88 грн
100+9.60 грн
113+7.86 грн
311+7.41 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ZTX851 ZTX851.pdf
ZTX851
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.2W
Case: TO92
Current gain: 25...300
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 130MHz
на замовлення 1284 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+104.20 грн
10+64.10 грн
27+33.26 грн
73+31.45 грн
1000+30.99 грн
Мінімальне замовлення: 4
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