Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (79037) > Сторінка 1277 з 1318
Фото | Назва | Виробник | Інформація |
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AZ431LARTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
AZ431LAZTR-E1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
AZ431LBKTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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В кошику од. на суму грн. | |||||||||||||
AZ431LBNTR-E1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
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В кошику од. на суму грн. | |||||||||||||
AZ431LBZTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
ZXTD718MCTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 3.5A Power dissipation: 2.45W Case: DFN3020B-8 Pulsed collector current: 6A Current gain: 15...475 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150...180MHz |
на замовлення 2676 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.23V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DPLS350E-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223 Collector-emitter voltage: 50V Current gain: 100...200 Collector current: 3A Pulsed collector current: 5A Type of transistor: PNP Case: SOT223 Mounting: SMD Power dissipation: 1W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 2500pcs. Frequency: 100MHz |
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В кошику од. на суму грн. | |||||||||||||
BC857BSQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. Pulsed collector current: 0.2A Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||
SMBJ30CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DPLS160-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.3W Case: SOT23 Pulsed collector current: 2A Current gain: 100...325 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150...220MHz |
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В кошику од. на суму грн. | |||||||||||||
DPLS160V-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.3W Case: SOT563 Pulsed collector current: 2A Current gain: 100...325 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150...220MHz |
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В кошику од. на суму грн. | |||||||||||||
DMN2016UTS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8 Mounting: SMD Case: TSSOP8 Drain-source voltage: 20V Drain current: 5.73A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Power dissipation: 0.88W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.5nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 36A |
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В кошику од. на суму грн. | |||||||||||||
DMN2019UTS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8 Mounting: SMD Case: TSSOP8 Drain-source voltage: 20V Drain current: 4.3A On-state resistance: 31mΩ Type of transistor: N-MOSFET Power dissipation: 0.78W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 8.8nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 30A |
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В кошику од. на суму грн. | |||||||||||||
DMN21D2UFB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Power dissipation: 570mW Polarisation: unipolar Type of transistor: N-MOSFET Kind of package: 7 inch reel; tape On-state resistance: 3Ω Drain current: 0.7A Drain-source voltage: 20V Case: X1-DFN1006-3 Gate charge: 930pC Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 1A |
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В кошику од. на суму грн. | |||||||||||||
DMN21D2UFB-7B | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Power dissipation: 570mW Polarisation: unipolar Type of transistor: N-MOSFET Kind of package: 7 inch reel; tape On-state resistance: 3Ω Drain current: 0.7A Drain-source voltage: 20V Case: X1-DFN1006-3 Gate charge: 930pC Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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ES3BB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 45pF |
на замовлення 1741 шт: термін постачання 21-30 дні (днів) |
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ES3B-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJ2010-F | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A Electrical mounting: THT Max. off-state voltage: 1kV Max. forward voltage: 1.05V Load current: 20A Max. forward impulse current: 0.24kA Kind of package: tube Version: flat Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: GBJ Leads: flat pin |
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В кошику од. на суму грн. | |||||||||||||
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GBU608 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | ||||||||||||
RS1JDFQ-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; reel,tape Mounting: SMD Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns Application: automotive industry Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 0.6kV Case: D-FLAT |
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В кошику од. на суму грн. | |||||||||||||
FRS1JE | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 600V; 1A; DO219AA; reel,tape Mounting: SMD Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 0.6kV Case: DO219AA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMBJ33CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MMBTA63-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Current gain: 5000...10000 Quantity in set/package: 3000pcs. |
на замовлення 4800 шт: термін постачання 21-30 дні (днів) |
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MMBTA64-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Current gain: 10000...20000 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMAJ15CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMAJ15AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DXT2907A-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.2W Case: SOT89 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 2500pcs. Pulsed collector current: 0.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMBJ36CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMBJ36AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
FZT653QTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 140...175MHz Application: automotive industry Pulsed collector current: 6A Current gain: 25...300 |
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В кошику од. на суму грн. | |||||||||||||
SBR20100CT | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Technology: SBR® Max. load current: 20A |
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В кошику од. на суму грн. | |||||||||||||
SBR20100CT-G | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Technology: SBR® Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SBR20100CTFP | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube Technology: SBR® Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SBR20A60CTB | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube Case: D2PAK Mounting: SMD Kind of package: tube Technology: SBR® Max. off-state voltage: 60V Max. load current: 20A Load current: 10A x2 Semiconductor structure: common cathode; double Type of diode: rectifying |
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В кошику од. на суму грн. | |||||||||||||
SBR20A60CTBQ-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; reel,tape Case: D2PAK Mounting: SMD Kind of package: reel; tape Technology: SBR® Max. off-state voltage: 60V Max. load current: 20A Load current: 10A x2 Semiconductor structure: common cathode; double Application: automotive industry Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SBR20A60CTFP | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR® Case: ITO220AB Mounting: THT Kind of package: tube Technology: SBR® Max. off-state voltage: 60V Max. load current: 20A Load current: 10A x2 Semiconductor structure: common cathode; double Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMBJ30AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMBJ24AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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FMMT558QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.15A Power dissipation: 0.5W Case: SOT23 Current gain: 15...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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FMMTA42TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23 Quantity in set/package: 3000pcs. Collector-emitter voltage: 300V Collector current: 0.2A Type of transistor: NPN Power dissipation: 0.35W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23 |
на замовлення 1750 шт: термін постачання 21-30 дні (днів) |
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GBU402 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
FMMT634QTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.9A Power dissipation: 0.806W Case: SOT23 Current gain: 0.6k...60k Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 140MHz Application: automotive industry Pulsed collector current: 5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
2N7002DWK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 261mA Power dissipation: 0.45W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.04nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 1.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2N7002DWQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.14A Power dissipation: 0.31W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry Pulsed drain current: 0.8A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
2N7002DWS-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 247mA Power dissipation: 0.37W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.4nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 1.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BAV99Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MMDT3904-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BAW56DW-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Features of semiconductor devices: small signal |
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В кошику од. на суму грн. | |||||||||||||
BAW56DWQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
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BAW56HDW-13 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Features of semiconductor devices: small signal |
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BAW56HDWQ-13 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: common anode; double x2 Case: SOT363 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
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RS1MDFQ-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: D-FLAT Kind of package: reel; tape Application: automotive industry |
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RS1MEWFQ-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Application: automotive industry |
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FRS1ME-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: DO219AA Kind of package: reel; tape |
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FRS1MEQ-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: DO219AA Kind of package: reel; tape Application: automotive industry |
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MUR120-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 Reverse recovery time: 25ns |
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MMDT2222A-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT363 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
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SMBJ18CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
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SMBJ15CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
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AZ431LARTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LAZTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBNTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AZ431LBZTR-G1 |
![]() |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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ZXTD718MCTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
на замовлення 2676 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 60.10 грн |
10+ | 49.43 грн |
35+ | 27.34 грн |
94+ | 25.91 грн |
1000+ | 24.87 грн |
SMBJ5.0AQ-13-F |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DPLS350E-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Collector-emitter voltage: 50V
Current gain: 100...200
Collector current: 3A
Pulsed collector current: 5A
Type of transistor: PNP
Case: SOT223
Mounting: SMD
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Collector-emitter voltage: 50V
Current gain: 100...200
Collector current: 3A
Pulsed collector current: 5A
Type of transistor: PNP
Case: SOT223
Mounting: SMD
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Frequency: 100MHz
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BC857BSQ-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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SMBJ30CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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DPLS160-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
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DPLS160V-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT563
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 300mW; SOT563
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT563
Pulsed collector current: 2A
Current gain: 100...325
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...220MHz
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DMN2016UTS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 5.73A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.88W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 5.73A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.88W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 36A
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DMN2019UTS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.78W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8
Mounting: SMD
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.78W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
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DMN21D2UFB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Power dissipation: 570mW
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 3Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Gate charge: 930pC
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Power dissipation: 570mW
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 3Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Gate charge: 930pC
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 1A
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DMN21D2UFB-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Power dissipation: 570mW
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 3Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Gate charge: 930pC
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Power dissipation: 570mW
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 3Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Gate charge: 930pC
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 1A
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ES3BB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMB; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
на замовлення 1741 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.79 грн |
13+ | 31.09 грн |
55+ | 17.14 грн |
151+ | 16.26 грн |
1000+ | 15.86 грн |
ES3B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
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GBJ2010-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Max. off-state voltage: 1kV
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: GBJ
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Max. off-state voltage: 1kV
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 0.24kA
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: GBJ
Leads: flat pin
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GBU608 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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RS1JDFQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: D-FLAT
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: D-FLAT
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FRS1JE |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; DO219AA; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: DO219AA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; DO219AA; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Case: DO219AA
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SMBJ33CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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MMBTA63-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 5000...10000
Quantity in set/package: 3000pcs.
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 5000...10000
Quantity in set/package: 3000pcs.
на замовлення 4800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.88 грн |
52+ | 7.81 грн |
107+ | 3.75 грн |
500+ | 2.50 грн |
595+ | 1.58 грн |
1636+ | 1.50 грн |
MMBTA64-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 10000...20000
Quantity in set/package: 3000pcs.
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 10000...20000
Quantity in set/package: 3000pcs.
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SMAJ15CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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SMAJ15AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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DXT2907A-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 0.8A
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SMBJ36CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMBJ36AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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FZT653QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140...175MHz
Application: automotive industry
Pulsed collector current: 6A
Current gain: 25...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140...175MHz
Application: automotive industry
Pulsed collector current: 6A
Current gain: 25...300
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SBR20100CT |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20100CT-G |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20100CTFP |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR20A60CTB |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; tube
Case: D2PAK
Mounting: SMD
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
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SBR20A60CTBQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Application: automotive industry
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 10Ax2; D2PAK; SBR®; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Application: automotive industry
Type of diode: rectifying
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SBR20A60CTFP |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 10Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Technology: SBR®
Max. off-state voltage: 60V
Max. load current: 20A
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
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SMBJ30AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ24AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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FMMT558QTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 42.07 грн |
15+ | 27.18 грн |
93+ | 10.12 грн |
255+ | 9.57 грн |
FMMTA42TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.45 грн |
39+ | 10.28 грн |
44+ | 9.25 грн |
100+ | 6.92 грн |
402+ | 2.34 грн |
1104+ | 2.21 грн |
GBU402 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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FMMT634QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.806W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
Pulsed collector current: 5A
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.806W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Application: automotive industry
Pulsed collector current: 5A
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2N7002DWK-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
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2N7002DWQ-7-F |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
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2N7002DWS-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
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BAV99Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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MMDT3904-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BAW56DW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56DWQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAW56HDW-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAW56HDWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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RS1MDFQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Kind of package: reel; tape
Application: automotive industry
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RS1MEWFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
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FRS1ME-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
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FRS1MEQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO219AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO219AA
Kind of package: reel; tape
Application: automotive industry
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MUR120-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
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MMDT2222A-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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SMBJ18CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ15CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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