Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74725) > Сторінка 601 з 1246
| Фото | Назва | Виробник | Інформація |
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KBJL1006-TU | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE KBJL TUPackaging: Tube Package / Case: 4-SIP, KBJL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJL Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
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KBJL1008-TU | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE KBJL TUPackaging: Tube Package / Case: 4-SIP, KBJL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJL Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KBJL1010-TU | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE KBJL TUPackaging: Tube Package / Case: 4-SIP, KBJL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJL Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KBJ1008G-TU | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE KBJ TUBPackaging: Tube Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AP7343-11W5-7 | Diodes Incorporated |
Description: IC REG LINEAR 1.1V 300MA SOT25Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 1.1V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.7V @ 300mA Protection Features: Over Current |
на замовлення 99000 шт: термін постачання 21-31 дні (днів) |
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AP7343-11W5-7 | Diodes Incorporated |
Description: IC REG LINEAR 1.1V 300MA SOT25Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 1.1V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.7V @ 300mA Protection Features: Over Current |
на замовлення 101988 шт: термін постачання 21-31 дні (днів) |
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| AP7343Q-11FDZW-7 | Diodes Incorporated |
Description: LDO CMOS LOWCURR W-DFN2020-6 T&RPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: W-DFN2020-6 (Type A1) Voltage - Output (Min/Fixed): 1.1V Control Features: Current Limit, Enable Grade: Automotive PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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| AP7343Q-11FDZW-7 | Diodes Incorporated |
Description: LDO CMOS LOWCURR W-DFN2020-6 T&RPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: W-DFN2020-6 (Type A1) Voltage - Output (Min/Fixed): 1.1V Control Features: Current Limit, Enable Grade: Automotive PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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| AP7343Q-185FDZW-7 | Diodes Incorporated |
Description: LDO CMOS LOWCURR W-DFN2020-6 T&RPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: W-DFN2020-6 (Type A1) Voltage - Output (Min/Fixed): 8.5V Control Features: Current Limit, Enable Grade: Automotive PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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| AP7343Q-185FDZW-7 | Diodes Incorporated |
Description: LDO CMOS LOWCURR W-DFN2020-6 T&RPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: W-DFN2020-6 (Type A1) Voltage - Output (Min/Fixed): 8.5V Control Features: Current Limit, Enable Grade: Automotive PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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SMBJ170AQ-13-F | Diodes Incorporated |
Description: TVS DIODE 170VWM 275VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 170V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 189V Voltage - Clamping (Max) @ Ipp: 275V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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KBJ3510 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 35A KBJPackaging: Tube Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
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PI3USB31531ZLCEX | Diodes Incorporated |
Description: IC USB3 SWITCH W-QFN3060-40Features: Bi-Directional, USB 3.1 Packaging: Tape & Reel (TR) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: USB -3db Bandwidth: 6GHz Supplier Device Package: 40-TQFN (3x6) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 6:4 Number of Channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PI3USB31531ZLCEX | Diodes Incorporated |
Description: IC USB3 SWITCH W-QFN3060-40Features: Bi-Directional, USB 3.1 Packaging: Cut Tape (CT) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: USB -3db Bandwidth: 6GHz Supplier Device Package: 40-TQFN (3x6) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 6:4 Number of Channels: 4 |
на замовлення 3095 шт: термін постачання 21-31 дні (днів) |
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AP7315-28FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 2.8V X2-DFN10104Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 2.8V PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.29V @ 150mA Protection Features: Over Current Current - Supply (Max): 100 µA |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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AP7315-28FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 2.8V X2-DFN10104Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 2.8V PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.29V @ 150mA Protection Features: Over Current Current - Supply (Max): 100 µA |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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| AP7351D-15FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 1.5V X2-DFN10104Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 (Type B) Voltage - Output (Min/Fixed): 1.5V Control Features: Current Limit, Enable Grade: Automotive PSRR: 60dB (1kHz) Voltage Dropout (Max): 0.75V @ 150mA Protection Features: Over Current Qualification: AEC-Q100 |
на замовлення 9819 шт: термін постачання 21-31 дні (днів) |
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DMG2307LQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
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DMG2307LQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 71575 шт: термін постачання 21-31 дні (днів) |
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B3100BE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 3A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 105pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 100 V |
на замовлення 165000 шт: термін постачання 21-31 дні (днів) |
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B3100BE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 3A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 105pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 100 V |
на замовлення 167329 шт: термін постачання 21-31 дні (днів) |
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KN3270029 | Diodes Incorporated |
Description: XTAL OSC XO 32.7680 KHZ CMOS SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 3.3V Current - Supply (Max): 500µA Height - Seated (Max): 0.061" (1.55mm) Frequency: 32.768 kHz Base Resonator: Crystal |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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KN3270029 | Diodes Incorporated |
Description: XTAL OSC XO 32.7680 KHZ CMOS SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 3.3V Current - Supply (Max): 500µA Height - Seated (Max): 0.061" (1.55mm) Frequency: 32.768 kHz Base Resonator: Crystal |
на замовлення 1588 шт: термін постачання 21-31 дні (днів) |
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DL4934-13 | Diodes Incorporated |
Description: DIODE GEN PURP 100V 1A MELFPackaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMTH15H017LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 101V~250V POWERDI5Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH15H017LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 101V~250V POWERDI5Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V |
на замовлення 3468 шт: термін постачання 21-31 дні (днів) |
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DMTH45M5SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 3.5W (Ta), 72W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMTH45M5SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 3.5W (Ta), 72W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 7172 шт: термін постачання 21-31 дні (днів) |
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DMT64M2LPSW-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 20.7A/100A PWRDIPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V |
на замовлення 7412 шт: термін постачання 21-31 дні (днів) |
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DMT8007LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Power Dissipation (Max): 1.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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DMT8007LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Power Dissipation (Max): 1.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V |
на замовлення 12915 шт: термін постачання 21-31 дні (днів) |
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DMTH10H003SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 2.6W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMTH10H003SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 2.6W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V |
на замовлення 1885 шт: термін постачання 21-31 дні (днів) |
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ZXM64P03XTA | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.8A 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-MSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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ZXM64P03XTA | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.8A 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-MSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V |
на замовлення 7884 шт: термін постачання 21-31 дні (днів) |
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DMT6012LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10.4A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMT6012LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10.4A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V |
на замовлення 4645 шт: термін постачання 21-31 дні (днів) |
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DMT6017LFV-7 | Diodes Incorporated |
Description: MOSFET N-CH 65V 36A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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DMT6017LFV-7 | Diodes Incorporated |
Description: MOSFET N-CH 65V 36A POWERDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V |
на замовлення 80504 шт: термін постачання 21-31 дні (днів) |
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DMT6012LFDF-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 9.5A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V Power Dissipation (Max): 900mW (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMT6012LFDF-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 9.5A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V Power Dissipation (Max): 900mW (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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DMT6010LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 13A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DMT6010LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 13A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 10842 шт: термін постачання 21-31 дні (днів) |
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DMT6006LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V |
на замовлення 7403 шт: термін постачання 21-31 дні (днів) |
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DMTH61M8SPSQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMTH61M8LPSQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD42C-13 | Diodes Incorporated |
Description: TRANS PNP 100V 6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-252 (DPAK) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AS7809ADTR-G1 | Diodes Incorporated |
Description: IC REG LINEAR 9V 1A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 29V Number of Regulators: 1 Supplier Device Package: TO-252-3 Voltage - Output (Min/Fixed): 9V PSRR: 61dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
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BZX84C36Q-7-F | Diodes Incorporated |
Description: ZENER DIODE SOT23 T&R 3KTolerance: ±5.56% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C36S-7-F | Diodes Incorporated |
Description: DIODE ZENER ARRAY 36V SOT363Tolerance: ±6% Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 Independent Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-363 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C36S-7-F | Diodes Incorporated |
Description: DIODE ZENER ARRAY 36V SOT363Tolerance: ±6% Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 Independent Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-363 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V |
на замовлення 2998 шт: термін постачання 21-31 дні (днів) |
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BZX84C36TQ-7-F | Diodes Incorporated |
Description: ZENER DIODE SOT523 T&R 3KTolerance: ±2.94% Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 34 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-523 Grade: Automotive Power - Max: 150 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V Qualification: AEC-Q101 |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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AP5726WUG-7 | Diodes Incorporated |
Description: IC LED DRVR RGLTR PWM TSOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 750mA (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: TSOT-23-6 Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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AP5726WUG-7 | Diodes Incorporated |
Description: IC LED DRVR RGLTR PWM TSOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 750mA (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: TSOT-23-6 Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V |
на замовлення 11835 шт: термін постачання 21-31 дні (днів) |
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HBDM60V600X-7 | Diodes Incorporated |
Description: TRANS NPN/PNP 60V/80V SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C Power - Max: 200mW Current - Collector (Ic) (Max): 600mA, 500mA Voltage - Collector Emitter Breakdown (Max): 60V, 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA, 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V Supplier Device Package: SOT-363 |
на замовлення 33190 шт: термін постачання 21-31 дні (днів) |
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AP2301AS-13 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 8SOFeatures: Load Discharge, Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AP2301AS-13 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 8SOFeatures: Load Discharge, Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
на замовлення 2470 шт: термін постачання 21-31 дні (днів) |
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AP2301AFGE-7 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHAN 1:1 8UDFNFeatures: Load Discharge, Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: U-DFN3030-8 (Type E) Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AP2301AFGE-7 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHAN 1:1 8UDFNFeatures: Load Discharge, Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: U-DFN3030-8 (Type E) Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G10FW4-7 | Diodes Incorporated |
Description: IC GATE NAND 1CH 3-INP DFN1010-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: X2-DFN1010-6 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 40 µA |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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| KBJL1006-TU |
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Виробник: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE KBJL TU
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: MEDIUM/HIGH POWER BRIDGE KBJL TU
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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В кошику
од. на суму грн.
| KBJL1008-TU |
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Виробник: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE KBJL TU
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: MEDIUM/HIGH POWER BRIDGE KBJL TU
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| KBJL1010-TU |
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Виробник: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE KBJL TU
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: MEDIUM/HIGH POWER BRIDGE KBJL TU
Packaging: Tube
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| KBJ1008G-TU |
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Виробник: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE KBJ TUB
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: MEDIUM/HIGH POWER BRIDGE KBJ TUB
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| AP7343-11W5-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.1V 300MA SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 1.1V 300MA SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.03 грн |
| 6000+ | 9.94 грн |
| 15000+ | 9.25 грн |
| 30000+ | 8.23 грн |
| 75000+ | 8.04 грн |
| AP7343-11W5-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.1V 300MA SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 1.1V 300MA SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current
на замовлення 101988 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.71 грн |
| 13+ | 25.74 грн |
| 25+ | 23.98 грн |
| 100+ | 18.00 грн |
| 250+ | 16.72 грн |
| 500+ | 14.15 грн |
| 1000+ | 10.75 грн |
| AP7343Q-11FDZW-7 |
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Виробник: Diodes Incorporated
Description: LDO CMOS LOWCURR W-DFN2020-6 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (Type A1)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: LDO CMOS LOWCURR W-DFN2020-6 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (Type A1)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.25 грн |
| 6000+ | 12.84 грн |
| 15000+ | 11.95 грн |
| 30000+ | 10.64 грн |
| AP7343Q-11FDZW-7 |
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Виробник: Diodes Incorporated
Description: LDO CMOS LOWCURR W-DFN2020-6 T&R
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (Type A1)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: LDO CMOS LOWCURR W-DFN2020-6 T&R
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (Type A1)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.84 грн |
| 10+ | 33.17 грн |
| 25+ | 30.98 грн |
| 100+ | 23.27 грн |
| 250+ | 21.60 грн |
| 500+ | 18.28 грн |
| 1000+ | 13.89 грн |
| AP7343Q-185FDZW-7 |
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Виробник: Diodes Incorporated
Description: LDO CMOS LOWCURR W-DFN2020-6 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (Type A1)
Voltage - Output (Min/Fixed): 8.5V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: LDO CMOS LOWCURR W-DFN2020-6 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (Type A1)
Voltage - Output (Min/Fixed): 8.5V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.25 грн |
| 6000+ | 12.84 грн |
| 15000+ | 11.95 грн |
| 30000+ | 10.64 грн |
| AP7343Q-185FDZW-7 |
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Виробник: Diodes Incorporated
Description: LDO CMOS LOWCURR W-DFN2020-6 T&R
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (Type A1)
Voltage - Output (Min/Fixed): 8.5V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: LDO CMOS LOWCURR W-DFN2020-6 T&R
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (Type A1)
Voltage - Output (Min/Fixed): 8.5V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.84 грн |
| 10+ | 33.17 грн |
| 25+ | 30.98 грн |
| 100+ | 23.27 грн |
| 250+ | 21.60 грн |
| 500+ | 18.28 грн |
| 1000+ | 13.89 грн |
| SMBJ170AQ-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 170VWM 275VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 170VWM 275VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.64 грн |
| 6000+ | 12.96 грн |
| 9000+ | 12.38 грн |
| KBJ3510 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 35A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 35A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 55.65 грн |
| PI3USB31531ZLCEX |
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Виробник: Diodes Incorporated
Description: IC USB3 SWITCH W-QFN3060-40
Features: Bi-Directional, USB 3.1
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: USB
-3db Bandwidth: 6GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 6:4
Number of Channels: 4
Description: IC USB3 SWITCH W-QFN3060-40
Features: Bi-Directional, USB 3.1
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: USB
-3db Bandwidth: 6GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 6:4
Number of Channels: 4
товару немає в наявності
В кошику
од. на суму грн.
| PI3USB31531ZLCEX |
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Виробник: Diodes Incorporated
Description: IC USB3 SWITCH W-QFN3060-40
Features: Bi-Directional, USB 3.1
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: USB
-3db Bandwidth: 6GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 6:4
Number of Channels: 4
Description: IC USB3 SWITCH W-QFN3060-40
Features: Bi-Directional, USB 3.1
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: USB
-3db Bandwidth: 6GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 6:4
Number of Channels: 4
на замовлення 3095 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 330.35 грн |
| 10+ | 205.09 грн |
| 25+ | 175.58 грн |
| 100+ | 133.49 грн |
| 250+ | 118.14 грн |
| 500+ | 108.69 грн |
| 1000+ | 99.13 грн |
| AP7315-28FS4-7B |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.8V X2-DFN10104
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.8V
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
Description: IC REG LINEAR 2.8V X2-DFN10104
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.8V
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 11.31 грн |
| 20000+ | 10.06 грн |
| 30000+ | 9.64 грн |
| 50000+ | 8.92 грн |
| AP7315-28FS4-7B |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.8V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.8V
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
Description: IC REG LINEAR 2.8V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.8V
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 150mA
Protection Features: Over Current
Current - Supply (Max): 100 µA
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.42 грн |
| 10+ | 35.65 грн |
| 25+ | 29.41 грн |
| 100+ | 21.00 грн |
| 250+ | 17.75 грн |
| 500+ | 15.75 грн |
| 1000+ | 13.84 грн |
| 2500+ | 12.06 грн |
| 5000+ | 10.97 грн |
| AP7351D-15FS4-7B |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.5V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 1.5V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.75V @ 150mA
Protection Features: Over Current
Qualification: AEC-Q100
Description: IC REG LINEAR 1.5V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 1.5V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.75V @ 150mA
Protection Features: Over Current
Qualification: AEC-Q100
на замовлення 9819 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.25 грн |
| 10+ | 36.29 грн |
| 25+ | 29.96 грн |
| 100+ | 21.39 грн |
| 250+ | 18.08 грн |
| 500+ | 16.05 грн |
| 1000+ | 14.11 грн |
| 2500+ | 12.30 грн |
| 5000+ | 11.19 грн |
| DMG2307LQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Qualification: AEC-Q101
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.03 грн |
| DMG2307LQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Qualification: AEC-Q101
на замовлення 71575 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.22 грн |
| 16+ | 21.10 грн |
| 100+ | 12.68 грн |
| 500+ | 11.02 грн |
| 1000+ | 7.49 грн |
| B3100BE-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.08 грн |
| 6000+ | 9.74 грн |
| 9000+ | 9.27 грн |
| 15000+ | 8.20 грн |
| 21000+ | 7.91 грн |
| 30000+ | 7.62 грн |
| 75000+ | 7.41 грн |
| B3100BE-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
на замовлення 167329 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.14 грн |
| 12+ | 28.69 грн |
| 100+ | 18.41 грн |
| 500+ | 13.09 грн |
| 1000+ | 11.73 грн |
| KN3270029 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 32.7680 KHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 500µA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 32.768 kHz
Base Resonator: Crystal
Description: XTAL OSC XO 32.7680 KHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 500µA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 32.768 kHz
Base Resonator: Crystal
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 96.86 грн |
| KN3270029 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 32.7680 KHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 500µA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 32.768 kHz
Base Resonator: Crystal
Description: XTAL OSC XO 32.7680 KHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 500µA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 32.768 kHz
Base Resonator: Crystal
на замовлення 1588 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.74 грн |
| 10+ | 123.49 грн |
| 25+ | 116.79 грн |
| 50+ | 105.06 грн |
| 100+ | 100.70 грн |
| 250+ | 95.24 грн |
| 500+ | 89.80 грн |
| DL4934-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 100V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| DMTH15H017LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 49.74 грн |
| DMTH15H017LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
на замовлення 3468 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.13 грн |
| 10+ | 108.06 грн |
| 100+ | 73.80 грн |
| 500+ | 55.53 грн |
| 1000+ | 54.78 грн |
| DMTH45M5SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 23.16 грн |
| 5000+ | 20.62 грн |
| DMTH45M5SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 20 V
Qualification: AEC-Q101
на замовлення 7172 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.30 грн |
| 10+ | 55.15 грн |
| 100+ | 36.45 грн |
| 500+ | 26.65 грн |
| 1000+ | 24.22 грн |
| DMT64M2LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 20.7A/100A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
Description: MOSFET N-CH 60V 20.7A/100A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
на замовлення 7412 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.26 грн |
| 10+ | 62.26 грн |
| 100+ | 43.64 грн |
| 500+ | 32.28 грн |
| 1000+ | 29.43 грн |
| DMT8007LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 30.02 грн |
| 5000+ | 26.85 грн |
| 7500+ | 26.47 грн |
| DMT8007LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V
на замовлення 12915 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 113.71 грн |
| 10+ | 69.38 грн |
| 100+ | 46.33 грн |
| 500+ | 34.19 грн |
| 1000+ | 31.21 грн |
| DMTH10H003SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H003SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
на замовлення 1885 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.27 грн |
| 10+ | 139.55 грн |
| 100+ | 96.62 грн |
| 500+ | 76.35 грн |
| ZXM64P03XTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
Description: MOSFET P-CH 30V 3.8A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 49.48 грн |
| 2000+ | 44.05 грн |
| 3000+ | 42.22 грн |
| 5000+ | 38.91 грн |
| ZXM64P03XTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
Description: MOSFET P-CH 30V 3.8A 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
на замовлення 7884 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.22 грн |
| 10+ | 87.76 грн |
| 100+ | 68.26 грн |
| 500+ | 54.30 грн |
| DMT6012LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
Description: MOSFET N-CH 60V 10.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 11.91 грн |
| DMT6012LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
Description: MOSFET N-CH 60V 10.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
на замовлення 4645 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.46 грн |
| 11+ | 30.61 грн |
| 100+ | 19.73 грн |
| 500+ | 14.07 грн |
| 1000+ | 12.64 грн |
| DMT6017LFV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 65V 36A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Description: MOSFET N-CH 65V 36A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 15.91 грн |
| 4000+ | 14.03 грн |
| 6000+ | 13.37 грн |
| 10000+ | 11.85 грн |
| 14000+ | 11.44 грн |
| 20000+ | 11.21 грн |
| DMT6017LFV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 65V 36A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Description: MOSFET N-CH 65V 36A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
на замовлення 80504 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.74 грн |
| 10+ | 38.68 грн |
| 100+ | 25.10 грн |
| 500+ | 18.08 грн |
| 1000+ | 16.31 грн |
| DMT6012LFDF-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 9.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Description: MOSFET N-CH 60V 9.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| DMT6012LFDF-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 9.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Description: MOSFET N-CH 60V 9.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.36 грн |
| 10+ | 45.96 грн |
| 100+ | 30.09 грн |
| DMT6010LFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.39 грн |
| 6000+ | 19.06 грн |
| 9000+ | 18.27 грн |
| DMT6010LFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 10842 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.15 грн |
| 10+ | 52.51 грн |
| 100+ | 34.59 грн |
| 500+ | 25.22 грн |
| 1000+ | 22.89 грн |
| DMT6006LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V
на замовлення 7403 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.94 грн |
| 10+ | 59.63 грн |
| 100+ | 39.52 грн |
| 500+ | 28.97 грн |
| 1000+ | 26.35 грн |
| DMTH61M8SPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.83 грн |
| 10+ | 133.56 грн |
| 100+ | 106.34 грн |
| 500+ | 84.44 грн |
| 1000+ | 71.64 грн |
| DMTH61M8LPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MJD42C-13 |
Виробник: Diodes Incorporated
Description: TRANS PNP 100V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Description: TRANS PNP 100V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 12.97 грн |
| AS7809ADTR-G1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 9V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 9V
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C36Q-7-F |
![]() |
Виробник: Diodes Incorporated
Description: ZENER DIODE SOT23 T&R 3K
Tolerance: ±5.56%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
Description: ZENER DIODE SOT23 T&R 3K
Tolerance: ±5.56%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.94 грн |
| 32+ | 10.07 грн |
| 100+ | 5.42 грн |
| 500+ | 3.99 грн |
| 1000+ | 2.77 грн |
| BZX84C36S-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER ARRAY 36V SOT363
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Description: DIODE ZENER ARRAY 36V SOT363
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C36S-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER ARRAY 36V SOT363
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Description: DIODE ZENER ARRAY 36V SOT363
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.88 грн |
| 16+ | 20.06 грн |
| 100+ | 10.11 грн |
| 500+ | 7.74 грн |
| 1000+ | 5.74 грн |
| BZX84C36TQ-7-F |
![]() |
Виробник: Diodes Incorporated
Description: ZENER DIODE SOT523 T&R 3K
Tolerance: ±2.94%
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 34 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-523
Grade: Automotive
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
Description: ZENER DIODE SOT523 T&R 3K
Tolerance: ±2.94%
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 34 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-523
Grade: Automotive
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Qualification: AEC-Q101
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.05 грн |
| 6000+ | 3.52 грн |
| 9000+ | 3.33 грн |
| 15000+ | 2.92 грн |
| 21000+ | 2.80 грн |
| 30000+ | 2.69 грн |
| 75000+ | 2.40 грн |
| AP5726WUG-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: TSOT-23-6
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR RGLTR PWM TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: TSOT-23-6
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 17.07 грн |
| 6000+ | 15.30 грн |
| AP5726WUG-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: TSOT-23-6
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR RGLTR PWM TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: TSOT-23-6
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
на замовлення 11835 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.99 грн |
| 10+ | 37.41 грн |
| 25+ | 35.14 грн |
| 100+ | 26.92 грн |
| 250+ | 25.00 грн |
| 500+ | 21.28 грн |
| 1000+ | 16.74 грн |
| HBDM60V600X-7 |
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Виробник: Diodes Incorporated
Description: TRANS NPN/PNP 60V/80V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60V, 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V
Supplier Device Package: SOT-363
Description: TRANS NPN/PNP 60V/80V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60V, 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V
Supplier Device Package: SOT-363
на замовлення 33190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.65 грн |
| 12+ | 27.10 грн |
| 100+ | 17.29 грн |
| 500+ | 12.25 грн |
| 1000+ | 10.97 грн |
| AP2301AS-13 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
товару немає в наявності
В кошику
од. на суму грн.
| AP2301AS-13 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
на замовлення 2470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.59 грн |
| 10+ | 34.69 грн |
| 25+ | 28.68 грн |
| 100+ | 20.46 грн |
| 250+ | 17.30 грн |
| 500+ | 15.35 грн |
| 1000+ | 13.49 грн |
| AP2301AFGE-7 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8UDFN
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN3030-8 (Type E)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH P-CHAN 1:1 8UDFN
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN3030-8 (Type E)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.51 грн |
| 6000+ | 13.66 грн |
| 9000+ | 13.02 грн |
| AP2301AFGE-7 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8UDFN
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN3030-8 (Type E)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH P-CHAN 1:1 8UDFN
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN3030-8 (Type E)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.55 грн |
| 10+ | 40.76 грн |
| 25+ | 33.76 грн |
| 100+ | 24.23 грн |
| 250+ | 20.56 грн |
| 500+ | 18.30 грн |
| 1000+ | 16.14 грн |
| 74LVC1G10FW4-7 |
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Виробник: Diodes Incorporated
Description: IC GATE NAND 1CH 3-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 40 µA
Description: IC GATE NAND 1CH 3-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 40 µA
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.93 грн |
| 10000+ | 6.94 грн |
| 15000+ | 6.59 грн |
| 25000+ | 5.81 грн |
| 35000+ | 5.59 грн |
| 50000+ | 5.38 грн |






















