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DMN2450UFB4-7B DMN2450UFB4-7B Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 8180000 шт:
термін постачання 21-31 дні (днів)
10000+2.49 грн
20000+2.37 грн
30000+2.28 грн
50000+2.06 грн
250000+1.92 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
DMN2450UFB4-7B DMN2450UFB4-7B Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 8181303 шт:
термін постачання 21-31 дні (днів)
24+13.20 грн
36+8.37 грн
100+4.22 грн
500+3.88 грн
1000+3.43 грн
2000+3.39 грн
5000+3.01 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
DMN2450UFB4-7R DMN2450UFB4-7R Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN2450UFB4-7R DMN2450UFB4-7R Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 7448 шт:
термін постачання 21-31 дні (днів)
18+17.85 грн
29+10.54 грн
100+4.22 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMN2451UFDQ-13 DMN2451UFDQ-13 Diodes Incorporated DMN2451UFDQ.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
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DMN2451UFDQ-7 DMN2451UFDQ-7 Diodes Incorporated DMN2451UFDQ.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
на замовлення 2331000 шт:
термін постачання 21-31 дні (днів)
3000+6.03 грн
6000+5.25 грн
9000+4.97 грн
15000+4.36 грн
21000+4.19 грн
30000+4.02 грн
75000+3.58 грн
150000+3.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FN2450038 FN2450038 Diodes Incorporated FN2450038.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
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FN2450045 FN2450045 Diodes Incorporated FN2450045.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
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FN2450055Z FN2450055Z Diodes Incorporated FN2450055Z.pdf Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Current - Supply (Max): 7mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
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FD5000067 FD5000067 Diodes Incorporated FD5000067.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.8V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
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FD5000051 FD5000051 Diodes Incorporated FD_3-3V.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
1000+58.01 грн
Мінімальне замовлення: 1000
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GB2400030 GB2400030 Diodes Incorporated GB_GG.pdf Description: CRYSTAL 24.0000MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 24 MHz
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GB2400038 GB2400038 Diodes Incorporated GB_GG.pdf Description: CRYSTAL 24.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24 MHz
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1N5406G_HF 1N5406G_HF Diodes Incorporated Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 200400 шт:
термін постачання 21-31 дні (днів)
1200+7.88 грн
2400+6.83 грн
3600+6.44 грн
6000+5.63 грн
8400+5.38 грн
12000+5.15 грн
30000+4.55 грн
60000+4.25 грн
Мінімальне замовлення: 1200
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FD5000060 FD5000060 Diodes Incorporated FD_3-3V.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 90°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
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FR1120004 Diodes Incorporated FR_3-3V.pdf Description: XTAL OSC XO 11.2896MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 11.2896 MHz
Base Resonator: Crystal
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FK2450013Q FK2450013Q Diodes Incorporated FK2450013Q.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
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1N5399S_HF 1N5399S_HF Diodes Incorporated Description: DIODE STANDARD 1000V 1.5A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+1.80 грн
10000+1.55 грн
15000+1.46 грн
Мінімальне замовлення: 5000
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SBR60A200CT SBR60A200CT Diodes Incorporated SBR60A200CT.pdf Description: DIODE ARR SBR 200V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 6117 шт:
термін постачання 21-31 дні (днів)
2+284.11 грн
50+216.73 грн
100+185.77 грн
500+154.97 грн
1000+132.69 грн
2000+124.94 грн
5000+117.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SBR60A150CT-G SBR60A150CT-G Diodes Incorporated SBR60A150CT.pdf Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
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SBR60A60CT-G SBR60A60CT-G Diodes Incorporated SBR60A60CT.pdf Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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SBR60A300CT-2223 SBR60A300CT-2223 Diodes Incorporated Description: DIODE ARR SBR 300V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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SBR60A60CT-G-2223 SBR60A60CT-G-2223 Diodes Incorporated Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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SBR60A150CT-2223 SBR60A150CT-2223 Diodes Incorporated Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
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SBR60A60CT-2223 SBR60A60CT-2223 Diodes Incorporated Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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FR1220009 Diodes Incorporated FR_3-3V.pdf Description: XTAL OSC XO 12.2880MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 12.288 MHz
Base Resonator: Crystal
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ZXTN5551ZTA ZXTN5551ZTA Diodes Incorporated ZXTN5551Z.pdf Description: TRANS NPN 160V 0.6A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.2 W
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DMTH10H032LFVW-7 DMTH10H032LFVW-7 Diodes Incorporated DMTH10H032LFVW.pdf Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+16.51 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMTH10H032LFVWQ-7 DMTH10H032LFVWQ-7 Diodes Incorporated DMTH10H032LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
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DMTH10H032LFVWQ-13 DMTH10H032LFVWQ-13 Diodes Incorporated DMTH10H032LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
7+48.13 грн
10+40.51 грн
100+28.09 грн
500+22.03 грн
1000+18.75 грн
2000+16.69 грн
5000+15.56 грн
10000+14.40 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMT10H032LDV-7 DMT10H032LDV-7 Diodes Incorporated DMT10H032LDV.pdf Description: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMTH10H032LPDW-13 DMTH10H032LPDW-13 Diodes Incorporated DMTH10H032LPDW.pdf Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+28.18 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH10H032LPDWQ-13 DMTH10H032LPDWQ-13 Diodes Incorporated DMTH10H032LPDWQ.pdf Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+30.20 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMHT10H032LFJ-13 Diodes Incorporated DMHT10H032LFJ.pdf Description: MOSFET 4N-CH 100V 6A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerVDFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN5045-12 (Type C)
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SMBJ85AQ-13-F SMBJ85AQ-13-F Diodes Incorporated ds40740.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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74LVC1G126FW4-7 74LVC1G126FW4-7 Diodes Incorporated 74LVC1G126.pdf Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1010-6
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+6.32 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
AP7375Q-33Y-13 AP7375Q-33Y-13 Diodes Incorporated AP7375Q.pdf Description: IC REG LINEAR 3.3V 300MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 85dB (1kHz)
Voltage Dropout (Max): 1.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
2500+13.28 грн
5000+11.64 грн
7500+11.06 грн
12500+9.77 грн
17500+9.41 грн
25000+9.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AP7333-12SRG-7 AP7333-12SRG-7 Diodes Incorporated AP7333.pdf Description: IC REG LINEAR 1.2V 300MA SOT23R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT23R
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+6.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AP7333-12SRG-7 AP7333-12SRG-7 Diodes Incorporated AP7333.pdf Description: IC REG LINEAR 1.2V 300MA SOT23R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT23R
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
на замовлення 17906 шт:
термін постачання 21-31 дні (днів)
17+18.63 грн
25+12.26 грн
28+10.85 грн
100+8.73 грн
250+8.04 грн
500+7.63 грн
1000+7.16 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
DFLT170A-7 DFLT170A-7 Diodes Incorporated DFLT5V0A_DFLT220A.pdf Description: TVS DIODE 170VWM 281VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 810mA
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 281V
Power - Peak Pulse: 225W
Power Line Protection: No
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DMTH6004SPSQ-13 DMTH6004SPSQ-13 Diodes Incorporated DMTH6004SPSQ.pdf Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)
2500+69.87 грн
5000+64.76 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH6004SPSQ-13 DMTH6004SPSQ-13 Diodes Incorporated DMTH6004SPSQ.pdf Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)
2+155.25 грн
10+123.94 грн
100+98.66 грн
500+78.34 грн
1000+66.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMTH62M8SPS-13 DMTH62M8SPS-13 Diodes Incorporated DMTH62M8SPS.pdf Description: MOSFET BVDSS: 41V-60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
товару немає в наявності
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KX2132727Q Diodes Incorporated Description: CRYSTAL OSCILLATOR
Packaging: Bulk
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P6SMAJ5.0ADF-13 P6SMAJ5.0ADF-13 Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 5VWM 9.2VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
DMP2101UCP9-7 Diodes Incorporated DMP2101UCP9.pdf Description: MOSFET 2P-CH 20V 2.5A 9DSN1515
Packaging: Bulk
Package / Case: 9-XFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 970mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DSN1515-9 (Type B)
товару немає в наявності
В кошику  од. на суму  грн.
DMTH61M5SPSW-13 Diodes Incorporated DMTH61M5SPSW.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
на замовлення 112500 шт:
термін постачання 21-31 дні (днів)
2500+63.37 грн
5000+58.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH61M5SPSW-13 Diodes Incorporated DMTH61M5SPSW.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
на замовлення 114970 шт:
термін постачання 21-31 дні (днів)
3+140.50 грн
10+112.42 грн
100+89.48 грн
500+71.05 грн
1000+60.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMTH61M8SPS-13 DMTH61M8SPS-13 Diodes Incorporated DMTH61M8SPS.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
DMTH61M5SPSWQ-13 Diodes Incorporated DMTH61M5SPSWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMTH61M8SPSQ-13 DMTH61M8SPSQ-13 Diodes Incorporated DMTH61M8SPSQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+70.43 грн
5000+65.28 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH61M8LPSQ-13 DMTH61M8LPSQ-13 Diodes Incorporated DMTH61M8LPSQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
HS1D-13 HS1D-13 Diodes Incorporated HS1D.pdf Description: DIODE GEN PURP 200V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1655000 шт:
термін постачання 21-31 дні (днів)
5000+6.80 грн
10000+5.90 грн
25000+5.81 грн
50000+5.12 грн
125000+5.07 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
HS1D-13 HS1D-13 Diodes Incorporated HS1D.pdf Description: DIODE GEN PURP 200V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1658344 шт:
термін постачання 21-31 дні (днів)
12+26.39 грн
16+19.66 грн
100+11.80 грн
500+10.25 грн
1000+6.97 грн
2000+6.42 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
FN1940004 FN1940004 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
товару немає в наявності
В кошику  од. на суму  грн.
LSP5527-S8A LSP5527-S8A Diodes Incorporated LSP5527.pdf Description: IC REG BUCK ADJ 2A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 340kHz
Voltage - Input (Max): 27V
Topology: Buck
Supplier Device Package: 8-SOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 21.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.925V
на замовлення 496280 шт:
термін постачання 21-31 дні (днів)
4+101.69 грн
10+61.74 грн
25+52.15 грн
100+38.67 грн
250+33.65 грн
500+30.58 грн
1000+27.57 грн
2500+24.88 грн
5000+23.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
3.0SMCJ36A-13 3.0SMCJ36A-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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3.0SMCJ36AQ-13 3.0SMCJ36AQ-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PI7C9X2G912GPBNJEX PI7C9X2G912GPBNJEX Diodes Incorporated PI7C9X2G912GP-Prod-Brief.pdf Description: IC INTERFACE SPECIALIZED 196BGA
Packaging: Tape & Reel (TR)
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 9-Port/12-Lane
Supplier Device Package: 196-LBGA (15x15)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+1594.02 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
PI7C9X2G912GPBNJEX PI7C9X2G912GPBNJEX Diodes Incorporated PI7C9X2G912GP-Prod-Brief.pdf Description: IC INTERFACE SPECIALIZED 196BGA
Packaging: Cut Tape (CT)
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 9-Port/12-Lane
Supplier Device Package: 196-LBGA (15x15)
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
1+2400.94 грн
10+1697.87 грн
25+1538.00 грн
100+1440.52 грн
В кошику  од. на суму  грн.
DMN2450UFB4-7B DMN2450UFB4.pdf
DMN2450UFB4-7B
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 8180000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.49 грн
20000+2.37 грн
30000+2.28 грн
50000+2.06 грн
250000+1.92 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
DMN2450UFB4-7B DMN2450UFB4.pdf
DMN2450UFB4-7B
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 8181303 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.20 грн
36+8.37 грн
100+4.22 грн
500+3.88 грн
1000+3.43 грн
2000+3.39 грн
5000+3.01 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
DMN2450UFB4-7R DMN2450UFB4.pdf
DMN2450UFB4-7R
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN2450UFB4-7R DMN2450UFB4.pdf
DMN2450UFB4-7R
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 7448 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+17.85 грн
29+10.54 грн
100+4.22 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMN2451UFDQ-13 DMN2451UFDQ.pdf
DMN2451UFDQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
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DMN2451UFDQ-7 DMN2451UFDQ.pdf
DMN2451UFDQ-7
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
на замовлення 2331000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.03 грн
6000+5.25 грн
9000+4.97 грн
15000+4.36 грн
21000+4.19 грн
30000+4.02 грн
75000+3.58 грн
150000+3.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FN2450038 FN2450038.pdf
FN2450038
Виробник: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
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FN2450045 FN2450045.pdf
FN2450045
Виробник: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
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FN2450055Z FN2450055Z.pdf
FN2450055Z
Виробник: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Current - Supply (Max): 7mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
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FD5000067 FD5000067.pdf
FD5000067
Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.8V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
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FD5000051 FD_3-3V.pdf
FD5000051
Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+58.01 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
GB2400030 GB_GG.pdf
GB2400030
Виробник: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 24 MHz
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GB2400038 GB_GG.pdf
GB2400038
Виробник: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24 MHz
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1N5406G_HF
1N5406G_HF
Виробник: Diodes Incorporated
Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 200400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1200+7.88 грн
2400+6.83 грн
3600+6.44 грн
6000+5.63 грн
8400+5.38 грн
12000+5.15 грн
30000+4.55 грн
60000+4.25 грн
Мінімальне замовлення: 1200
В кошику  од. на суму  грн.
FD5000060 FD_3-3V.pdf
FD5000060
Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 90°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
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FR1120004 FR_3-3V.pdf
Виробник: Diodes Incorporated
Description: XTAL OSC XO 11.2896MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 11.2896 MHz
Base Resonator: Crystal
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FK2450013Q FK2450013Q.pdf
FK2450013Q
Виробник: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
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1N5399S_HF
1N5399S_HF
Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 1.5A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.80 грн
10000+1.55 грн
15000+1.46 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SBR60A200CT SBR60A200CT.pdf
SBR60A200CT
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 200V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 6117 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+284.11 грн
50+216.73 грн
100+185.77 грн
500+154.97 грн
1000+132.69 грн
2000+124.94 грн
5000+117.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SBR60A150CT-G SBR60A150CT.pdf
SBR60A150CT-G
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
товару немає в наявності
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SBR60A60CT-G SBR60A60CT.pdf
SBR60A60CT-G
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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SBR60A300CT-2223
SBR60A300CT-2223
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 300V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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SBR60A60CT-G-2223
SBR60A60CT-G-2223
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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SBR60A150CT-2223
SBR60A150CT-2223
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
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SBR60A60CT-2223
SBR60A60CT-2223
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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FR1220009 FR_3-3V.pdf
Виробник: Diodes Incorporated
Description: XTAL OSC XO 12.2880MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 12.288 MHz
Base Resonator: Crystal
товару немає в наявності
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ZXTN5551ZTA ZXTN5551Z.pdf
ZXTN5551ZTA
Виробник: Diodes Incorporated
Description: TRANS NPN 160V 0.6A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.2 W
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DMTH10H032LFVW-7 DMTH10H032LFVW.pdf
DMTH10H032LFVW-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+16.51 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMTH10H032LFVWQ-7 DMTH10H032LFVWQ.pdf
DMTH10H032LFVWQ-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
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DMTH10H032LFVWQ-13 DMTH10H032LFVWQ.pdf
DMTH10H032LFVWQ-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+48.13 грн
10+40.51 грн
100+28.09 грн
500+22.03 грн
1000+18.75 грн
2000+16.69 грн
5000+15.56 грн
10000+14.40 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMT10H032LDV-7 DMT10H032LDV.pdf
DMT10H032LDV-7
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMTH10H032LPDW-13 DMTH10H032LPDW.pdf
DMTH10H032LPDW-13
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+28.18 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH10H032LPDWQ-13 DMTH10H032LPDWQ.pdf
DMTH10H032LPDWQ-13
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+30.20 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMHT10H032LFJ-13 DMHT10H032LFJ.pdf
Виробник: Diodes Incorporated
Description: MOSFET 4N-CH 100V 6A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerVDFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN5045-12 (Type C)
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SMBJ85AQ-13-F ds40740.pdf
SMBJ85AQ-13-F
Виробник: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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74LVC1G126FW4-7 74LVC1G126.pdf
74LVC1G126FW4-7
Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1010-6
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+6.32 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
AP7375Q-33Y-13 AP7375Q.pdf
AP7375Q-33Y-13
Виробник: Diodes Incorporated
Description: IC REG LINEAR 3.3V 300MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 85dB (1kHz)
Voltage Dropout (Max): 1.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+13.28 грн
5000+11.64 грн
7500+11.06 грн
12500+9.77 грн
17500+9.41 грн
25000+9.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AP7333-12SRG-7 AP7333.pdf
AP7333-12SRG-7
Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.2V 300MA SOT23R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT23R
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AP7333-12SRG-7 AP7333.pdf
AP7333-12SRG-7
Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.2V 300MA SOT23R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT23R
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
на замовлення 17906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+18.63 грн
25+12.26 грн
28+10.85 грн
100+8.73 грн
250+8.04 грн
500+7.63 грн
1000+7.16 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
DFLT170A-7 DFLT5V0A_DFLT220A.pdf
DFLT170A-7
Виробник: Diodes Incorporated
Description: TVS DIODE 170VWM 281VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 810mA
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 281V
Power - Peak Pulse: 225W
Power Line Protection: No
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DMTH6004SPSQ-13 DMTH6004SPSQ.pdf
DMTH6004SPSQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+69.87 грн
5000+64.76 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH6004SPSQ-13 DMTH6004SPSQ.pdf
DMTH6004SPSQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+155.25 грн
10+123.94 грн
100+98.66 грн
500+78.34 грн
1000+66.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMTH62M8SPS-13 DMTH62M8SPS.pdf
DMTH62M8SPS-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
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KX2132727Q
Виробник: Diodes Incorporated
Description: CRYSTAL OSCILLATOR
Packaging: Bulk
товару немає в наявності
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P6SMAJ5.0ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ5.0ADF-13
Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 9.2VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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DMP2101UCP9-7 DMP2101UCP9.pdf
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 2.5A 9DSN1515
Packaging: Bulk
Package / Case: 9-XFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 970mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DSN1515-9 (Type B)
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DMTH61M5SPSW-13 DMTH61M5SPSW.pdf
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
на замовлення 112500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+63.37 грн
5000+58.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH61M5SPSW-13 DMTH61M5SPSW.pdf
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
на замовлення 114970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+140.50 грн
10+112.42 грн
100+89.48 грн
500+71.05 грн
1000+60.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMTH61M8SPS-13 DMTH61M8SPS.pdf
DMTH61M8SPS-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
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DMTH61M5SPSWQ-13 DMTH61M5SPSWQ.pdf
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
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DMTH61M8SPSQ-13 DMTH61M8SPSQ.pdf
DMTH61M8SPSQ-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+70.43 грн
5000+65.28 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH61M8LPSQ-13 DMTH61M8LPSQ.pdf
DMTH61M8LPSQ-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Qualification: AEC-Q101
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HS1D-13 HS1D.pdf
HS1D-13
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 200V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1655000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+6.80 грн
10000+5.90 грн
25000+5.81 грн
50000+5.12 грн
125000+5.07 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
HS1D-13 HS1D.pdf
HS1D-13
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 200V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1658344 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+26.39 грн
16+19.66 грн
100+11.80 грн
500+10.25 грн
1000+6.97 грн
2000+6.42 грн
Мінімальне замовлення: 12
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FN1940004
FN1940004
Виробник: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
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LSP5527-S8A LSP5527.pdf
LSP5527-S8A
Виробник: Diodes Incorporated
Description: IC REG BUCK ADJ 2A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 340kHz
Voltage - Input (Max): 27V
Topology: Buck
Supplier Device Package: 8-SOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 21.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.925V
на замовлення 496280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.69 грн
10+61.74 грн
25+52.15 грн
100+38.67 грн
250+33.65 грн
500+30.58 грн
1000+27.57 грн
2500+24.88 грн
5000+23.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
3.0SMCJ36A-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ36A-13
Виробник: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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3.0SMCJ36AQ-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ36AQ-13
Виробник: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PI7C9X2G912GPBNJEX PI7C9X2G912GP-Prod-Brief.pdf
PI7C9X2G912GPBNJEX
Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 196BGA
Packaging: Tape & Reel (TR)
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 9-Port/12-Lane
Supplier Device Package: 196-LBGA (15x15)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+1594.02 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
PI7C9X2G912GPBNJEX PI7C9X2G912GP-Prod-Brief.pdf
PI7C9X2G912GPBNJEX
Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 196BGA
Packaging: Cut Tape (CT)
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 9-Port/12-Lane
Supplier Device Package: 196-LBGA (15x15)
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2400.94 грн
10+1697.87 грн
25+1538.00 грн
100+1440.52 грн
В кошику  од. на суму  грн.
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