Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72708) > Сторінка 611 з 1212
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DMPH6250SQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 2.4A SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V Power Dissipation (Max): 920mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 3283 шт: термін постачання 21-31 дні (днів) |
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SMAJ160A-13-F | Diodes Incorporated |
Description: TVS DIODE 160VWM 259VC SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.5A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 400W Power Line Protection: No |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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SMAJ160A-13-F | Diodes Incorporated |
Description: TVS DIODE 160VWM 259VC SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.5A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 400W Power Line Protection: No |
на замовлення 26500 шт: термін постачання 21-31 дні (днів) |
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SMAJ160AQ-13-F | Diodes Incorporated |
Description: TVS DIODE 160VWM 259VC SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.5A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PAM2322AGEAR | Diodes Incorporated |
Description: IC REG BUCK ADJ/0.9V W-FLGA2520 Packaging: Cut Tape (CT) Package / Case: 17-WFLGA Output Type: Adjustable (Fixed) Mounting Type: Surface Mount Number of Outputs: 2 Function: Step-Down Current - Output: 1A, 2A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 1.2MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: W-FLGA2520-17 Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.9V (1.8V) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPF1020CTSW | Diodes Incorporated |
Description: DIODE ARRAY GP 200V 10A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 1429 шт: термін постачання 21-31 дні (днів) |
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SMAJ48AQ-13-F | Diodes Incorporated |
Description: TVS DIODE 48VWM 77.4VC SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 5.2A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3742 шт: термін постачання 21-31 дні (днів) |
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PT7M3808G30TAEX | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 180ms Minimum Voltage - Threshold: 3V Supplier Device Package: SOT-23-6 DigiKey Programmable: Not Verified |
на замовлення 1131000 шт: термін постачання 21-31 дні (днів) |
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PT7M3808G30TAEX | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 180ms Minimum Voltage - Threshold: 3V Supplier Device Package: SOT-23-6 DigiKey Programmable: Not Verified |
на замовлення 1132736 шт: термін постачання 21-31 дні (днів) |
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GC2480003 | Diodes Incorporated |
Description: CRYSTAL 24.8832MHZ 18PFPackaging: Tape & Reel (TR) Load Capacitance: 18pF Type: MHz Crystal Operating Temperature: -30°C ~ 85°C Frequency Stability: ±15ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 40 Ohms Frequency: 24.8832 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FL2700033 | Diodes Incorporated |
Description: CRYSTAL 27.0000MHZ 12PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 12pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±30ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 100 Ohms Frequency: 27 MHz |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
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FL2700033 | Diodes Incorporated |
Description: CRYSTAL 27.0000MHZ 12PF SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Load Capacitance: 12pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±30ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 100 Ohms Frequency: 27 MHz |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
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DPC817W-A-TU | Diodes Incorporated |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 200mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 35V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ8.0CAQ-13-F | Diodes Incorporated |
Description: TVS DIODE 8VWM 13.6VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 44.1A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.89V Voltage - Clamping (Max) @ Ipp: 13.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRB10200CT-13 | Diodes Incorporated |
Description: DIODE ARRAY SCHOT 200V 5A TO-263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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MBRB10200CT-13 | Diodes Incorporated |
Description: DIODE ARRAY SCHOT 200V 5A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 2717 шт: термін постачання 21-31 дні (днів) |
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MBRB10200CT | Diodes Incorporated |
Description: DIODE ARRAY SCHOT 200V 5A TO-263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 1197 шт: термін постачання 21-31 дні (днів) |
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FW3200034 | Diodes Incorporated |
Description: CRYSTAL 32.0000MHZ 8PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.022" (0.55mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 32 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMG6301UDW-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 25V 0.24A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 240mA Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 330000 шт: термін постачання 21-31 дні (днів) |
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DMG6301UDW-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 25V 0.24A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 240mA Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 330000 шт: термін постачання 21-31 дні (днів) |
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DGD0597FUQ-7 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8VQFNPackaging: Tape & Reel (TR) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 40 V Supplier Device Package: V-QFN3030-8 Rise / Fall Time (Typ): 7ns, 5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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DGD0597FUQ-7 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8VQFNPackaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 40 V Supplier Device Package: V-QFN3030-8 Rise / Fall Time (Typ): 7ns, 5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A |
на замовлення 92990 шт: термін постачання 21-31 дні (днів) |
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DGD0503FN-7 | Diodes Incorporated |
Description: IC GATE DRV HALF-BRDG DFN3030-10Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: W-DFN3030-10 (Type TH) Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
на замовлення 102000 шт: термін постачання 21-31 дні (днів) |
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DGD0503FN-7 | Diodes Incorporated |
Description: IC GATE DRV HALF-BRDG DFN3030-10Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: W-DFN3030-10 (Type TH) Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
на замовлення 104699 шт: термін постачання 21-31 дні (днів) |
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DGD0504FN-7 | Diodes Incorporated |
Description: IC GATE DRV HALF-BRDG DFN3030-10Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: W-DFN3030-10 (Type TH) Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DGD0504FN-7 | Diodes Incorporated |
Description: IC GATE DRV HALF-BRDG DFN3030-10Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: W-DFN3030-10 (Type TH) Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
на замовлення 2077 шт: термін постачання 21-31 дні (днів) |
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DGD0597FU-7 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8VQFNPackaging: Tape & Reel (TR) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 40 V Supplier Device Package: V-QFN3030-8 Rise / Fall Time (Typ): 7ns, 5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DGD0597FU-7 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8VQFNPackaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 40 V Supplier Device Package: V-QFN3030-8 Rise / Fall Time (Typ): 7ns, 5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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DGD0280WTQ-7 | Diodes Incorporated |
Description: IC GATE DRVR LOW-SIDE TSOT25-5Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: TSOT-25 Rise / Fall Time (Typ): 20ns, 15ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2.5A, 2.8A Grade: Automotive Qualification: AEC-Q100 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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| DGD05791UFN-7 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 10UFDFNPackaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 6.5V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: U-DFN3030-10 Rise / Fall Time (Typ): 19ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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| DGD0579UFNQ-7 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 10UFDFNPackaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 7V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: U-DFN3030-10 Rise / Fall Time (Typ): 19ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DGD0636MS28-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 28SOPackaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: 28-SO Rise / Fall Time (Typ): 90ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
на замовлення 49500 шт: термін постачання 21-31 дні (днів) |
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DGD0636S28-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRDG 28SO 1.5K Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: 28-SO Rise / Fall Time (Typ): 90ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN10H220LQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.6A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DMN10H220LQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.6A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 31564 шт: термін постачання 21-31 дні (днів) |
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DMN10H220LVT-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.87A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.67W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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DMN10H220LVT-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.87A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.67W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V |
на замовлення 21009 шт: термін постачання 21-31 дні (днів) |
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DMN10H220LQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.6A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMN10H220LQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.6A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 15569 шт: термін постачання 21-31 дні (днів) |
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DMN10H220LFDF-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V U-DFN2020Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMN10H220LFVW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN10H220LFVW-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DMN10H220LDV-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 100V PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN10H220LDV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 100V PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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ZXTP01500BGQTA | Diodes Incorporated |
Description: PWRHIVOLTAGETRANSISTORSOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Frequency - Transition: 60MHz Supplier Device Package: SOT-223-3 Grade: Automotive Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 3 W Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXTP01500BGQTA | Diodes Incorporated |
Description: PWRHIVOLTAGETRANSISTORSOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Frequency - Transition: 60MHz Supplier Device Package: SOT-223-3 Grade: Automotive Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 3 W Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74AHCT1G00W5-7 | Diodes Incorporated |
Description: IC GATE NAND 1CH 2-INP SOT25Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SOT-25 Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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74AHCT1G00W5-7 | Diodes Incorporated |
Description: IC GATE NAND 1CH 2-INP SOT25Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SOT-25 Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 152782 шт: термін постачання 21-31 дні (днів) |
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AP64501QSP-EVM | Diodes Incorporated |
Description: EVAL BOARD FOR AP64501QPackaging: Box Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V Voltage - Input: 3.8V ~ 40V Current - Output: 5A Contents: Board(s) Frequency - Switching: 570kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: AP64501Q Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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PI3USB3000ZUAEX | Diodes Incorporated |
Description: USB2 SWITCH U-QFN1520-10 T&R 3KFeatures: USB 2.0 Packaging: Tape & Reel (TR) Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 9Ohm -3db Bandwidth: 5.5GHz Supplier Device Package: 10-UQFN (1.5x2) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
на замовлення 531000 шт: термін постачання 21-31 дні (днів) |
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PI3USB3000ZUAEX | Diodes Incorporated |
Description: USB2 SWITCH U-QFN1520-10 T&R 3KFeatures: USB 2.0 Packaging: Cut Tape (CT) Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 9Ohm -3db Bandwidth: 5.5GHz Supplier Device Package: 10-UQFN (1.5x2) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
на замовлення 533441 шт: термін постачання 21-31 дні (днів) |
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B290AE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 90V 2A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 7 µA @ 90 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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B290AE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 90V 2A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 7 µA @ 90 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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PI6ULS5V9509UEX | Diodes Incorporated |
Description: IC REDRIVER I2C 1CH 400KHZ 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Number of Channels: 1 Mounting Type: Surface Mount Output: 2-Wire Bus Type: Buffer, ReDriver Input: 2-Wire Bus Voltage - Supply: 3V ~ 5.5V Applications: I2C Current - Supply: 3mA Data Rate (Max): 400kHz Supplier Device Package: 8-MSOP Capacitance - Input: 6 pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI6ULS5V9509UEX | Diodes Incorporated |
Description: IC REDRIVER I2C 1CH 400KHZ 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Number of Channels: 1 Mounting Type: Surface Mount Output: 2-Wire Bus Type: Buffer, ReDriver Input: 2-Wire Bus Voltage - Supply: 3V ~ 5.5V Applications: I2C Current - Supply: 3mA Data Rate (Max): 400kHz Supplier Device Package: 8-MSOP Capacitance - Input: 6 pF |
на замовлення 1155 шт: термін постачання 21-31 дні (днів) |
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DMN2036UCB4-7 | Diodes Incorporated |
Description: MOSFET 2N-CH X2-WLB1616Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V Supplier Device Package: X2-WLB1616-4 |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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DMN2036UCB4-7 | Diodes Incorporated |
Description: MOSFET 2N-CH X2-WLB1616Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V Supplier Device Package: X2-WLB1616-4 |
на замовлення 41726 шт: термін постачання 21-31 дні (днів) |
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1.5KE12CA-B | Diodes Incorporated |
Description: TVS DIODE 10.2VWM 16.7VC DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 90A Voltage - Reverse Standoff (Typ): 10.2V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FD6250009 | Diodes Incorporated |
Description: XTAL OSC XO 62.5000MHZ CMOS SMDPackaging: Bulk Package / Case: 4-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 3.3V Current - Supply (Max): 25mA Height - Seated (Max): 0.051" (1.30mm) Frequency: 62.5 MHz Base Resonator: Crystal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI2DBS32412ZTFEX | Diodes Incorporated |
Description: PCIE SWITCH U-QFN2048-32 T&R 3.5Features: Bi-Directional, USB 3.0, USB 3.1 Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: PCIe, USB Supplier Device Package: 32-QFN (2x4.8) Voltage - Supply, Single (V+): 1.8V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. |
| DMPH6250SQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 2.4A SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
Power Dissipation (Max): 920mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 2.4A SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
Power Dissipation (Max): 920mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3283 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.45 грн |
| 13+ | 27.01 грн |
| 100+ | 18.38 грн |
| 500+ | 13.45 грн |
| 1000+ | 11.16 грн |
| 2000+ | 10.91 грн |
| SMAJ160A-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 160VWM 259VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 160VWM 259VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 5.78 грн |
| 10000+ | 5.18 грн |
| 15000+ | 4.91 грн |
| 25000+ | 4.36 грн |
| SMAJ160A-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 160VWM 259VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 160VWM 259VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 26500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.16 грн |
| 22+ | 15.03 грн |
| 100+ | 6.71 грн |
| 500+ | 6.11 грн |
| 1000+ | 5.93 грн |
| SMAJ160AQ-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 160VWM 259VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 160VWM 259VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| PAM2322AGEAR |
Виробник: Diodes Incorporated
Description: IC REG BUCK ADJ/0.9V W-FLGA2520
Packaging: Cut Tape (CT)
Package / Case: 17-WFLGA
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 1A, 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: W-FLGA2520-17
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V (1.8V)
Description: IC REG BUCK ADJ/0.9V W-FLGA2520
Packaging: Cut Tape (CT)
Package / Case: 17-WFLGA
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 1A, 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: W-FLGA2520-17
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V (1.8V)
товару немає в наявності
В кошику
од. на суму грн.
| STPF1020CTSW |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1429 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.31 грн |
| 50+ | 22.88 грн |
| 100+ | 20.47 грн |
| 500+ | 15.10 грн |
| 1000+ | 13.75 грн |
| SMAJ48AQ-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 48VWM 77.4VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 48VWM 77.4VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3742 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.59 грн |
| 15+ | 22.79 грн |
| 100+ | 14.49 грн |
| 500+ | 10.23 грн |
| 1000+ | 9.14 грн |
| 2000+ | 8.22 грн |
| PT7M3808G30TAEX |
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Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 180ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: SOT-23-6
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 180ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: SOT-23-6
DigiKey Programmable: Not Verified
на замовлення 1131000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 41.66 грн |
| 6000+ | 39.21 грн |
| 9000+ | 38.76 грн |
| 15000+ | 35.90 грн |
| PT7M3808G30TAEX |
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Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 180ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: SOT-23-6
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 180ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: SOT-23-6
DigiKey Programmable: Not Verified
на замовлення 1132736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.62 грн |
| 10+ | 60.45 грн |
| 25+ | 54.71 грн |
| 100+ | 45.37 грн |
| 250+ | 42.53 грн |
| 500+ | 40.81 грн |
| 1000+ | 38.75 грн |
| GC2480003 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 24.8832MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 24.8832 MHz
Description: CRYSTAL 24.8832MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 24.8832 MHz
товару немає в наявності
В кошику
од. на суму грн.
| FL2700033 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 27.0000MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 27 MHz
Description: CRYSTAL 27.0000MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 27 MHz
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 25.44 грн |
| 6000+ | 23.69 грн |
| 15000+ | 22.87 грн |
| FL2700033 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 27.0000MHZ 12PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 27 MHz
Description: CRYSTAL 27.0000MHZ 12PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 27 MHz
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.46 грн |
| 10+ | 40.80 грн |
| 50+ | 36.75 грн |
| 100+ | 30.66 грн |
| 500+ | 29.13 грн |
| 1000+ | 24.53 грн |
| DPC817W-A-TU |
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Виробник: Diodes Incorporated
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 35V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 35V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ8.0CAQ-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 8VWM 13.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 8VWM 13.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MBRB10200CT-13 |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 20.87 грн |
| 1600+ | 19.90 грн |
| 2400+ | 19.36 грн |
| MBRB10200CT-13 |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
на замовлення 2717 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.75 грн |
| 10+ | 41.62 грн |
| 100+ | 33.79 грн |
| MBRB10200CT |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1197 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.76 грн |
| 50+ | 35.63 грн |
| 100+ | 31.57 грн |
| 500+ | 22.93 грн |
| 1000+ | 20.78 грн |
| FW3200034 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 32 MHz
Description: CRYSTAL 32.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 32 MHz
товару немає в наявності
В кошику
од. на суму грн.
| DMG6301UDW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
на замовлення 330000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.73 грн |
| 30000+ | 4.47 грн |
| 50000+ | 3.70 грн |
| DMG6301UDW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
на замовлення 330000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.73 грн |
| 16+ | 21.39 грн |
| 100+ | 10.81 грн |
| 500+ | 8.28 грн |
| 1000+ | 6.14 грн |
| 2000+ | 5.17 грн |
| 5000+ | 4.86 грн |
| DGD0597FUQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8VQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: V-QFN3030-8
Rise / Fall Time (Typ): 7ns, 5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Description: IC GATE DRVR HALF-BRIDGE 8VQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: V-QFN3030-8
Rise / Fall Time (Typ): 7ns, 5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 28.09 грн |
| 6000+ | 26.39 грн |
| 9000+ | 26.06 грн |
| 15000+ | 24.11 грн |
| 21000+ | 23.91 грн |
| DGD0597FUQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: V-QFN3030-8
Rise / Fall Time (Typ): 7ns, 5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Description: IC GATE DRVR HALF-BRIDGE 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: V-QFN3030-8
Rise / Fall Time (Typ): 7ns, 5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
на замовлення 92990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.04 грн |
| 10+ | 41.79 грн |
| 25+ | 37.59 грн |
| 100+ | 30.96 грн |
| 250+ | 28.91 грн |
| 500+ | 27.67 грн |
| 1000+ | 26.21 грн |
| DGD0503FN-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: W-DFN3030-10 (Type TH)
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: W-DFN3030-10 (Type TH)
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 31.33 грн |
| 6000+ | 29.45 грн |
| 9000+ | 29.09 грн |
| 15000+ | 26.93 грн |
| 21000+ | 26.71 грн |
| DGD0503FN-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: W-DFN3030-10 (Type TH)
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: W-DFN3030-10 (Type TH)
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 104699 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 67.75 грн |
| 10+ | 46.33 грн |
| 25+ | 41.72 грн |
| 100+ | 34.43 грн |
| 250+ | 32.17 грн |
| 500+ | 30.82 грн |
| 1000+ | 29.21 грн |
| DGD0504FN-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: W-DFN3030-10 (Type TH)
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: W-DFN3030-10 (Type TH)
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| DGD0504FN-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: W-DFN3030-10 (Type TH)
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: W-DFN3030-10 (Type TH)
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 2077 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 83.19 грн |
| 10+ | 57.40 грн |
| 25+ | 51.93 грн |
| 100+ | 43.02 грн |
| 250+ | 40.30 грн |
| 500+ | 38.66 грн |
| 1000+ | 36.70 грн |
| DGD0597FU-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8VQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: V-QFN3030-8
Rise / Fall Time (Typ): 7ns, 5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Description: IC GATE DRVR HALF-BRIDGE 8VQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: V-QFN3030-8
Rise / Fall Time (Typ): 7ns, 5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
товару немає в наявності
В кошику
од. на суму грн.
| DGD0597FU-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: V-QFN3030-8
Rise / Fall Time (Typ): 7ns, 5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Description: IC GATE DRVR HALF-BRIDGE 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: V-QFN3030-8
Rise / Fall Time (Typ): 7ns, 5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 48.89 грн |
| 10+ | 33.28 грн |
| 25+ | 29.86 грн |
| 100+ | 24.50 грн |
| 250+ | 22.81 грн |
| 500+ | 21.79 грн |
| 1000+ | 20.61 грн |
| DGD0280WTQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR LOW-SIDE TSOT25-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: TSOT-25
Rise / Fall Time (Typ): 20ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2.5A, 2.8A
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE TSOT25-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: TSOT-25
Rise / Fall Time (Typ): 20ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2.5A, 2.8A
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 36.22 грн |
| 6000+ | 32.37 грн |
| 9000+ | 32.02 грн |
| DGD05791UFN-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 10UFDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 6.5V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: U-DFN3030-10
Rise / Fall Time (Typ): 19ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Description: IC GATE DRVR HALF-BRIDGE 10UFDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 6.5V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: U-DFN3030-10
Rise / Fall Time (Typ): 19ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 44.72 грн |
| 6000+ | 41.07 грн |
| DGD0579UFNQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 10UFDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: U-DFN3030-10
Rise / Fall Time (Typ): 19ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDGE 10UFDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: U-DFN3030-10
Rise / Fall Time (Typ): 19ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| DGD0636MS28-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 28SO
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 28-SO
Rise / Fall Time (Typ): 90ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SO
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 28-SO
Rise / Fall Time (Typ): 90ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 49500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 87.71 грн |
| 3000+ | 83.02 грн |
| DGD0636S28-13 |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRDG 28SO 1.5K
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 28-SO
Rise / Fall Time (Typ): 90ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRDG 28SO 1.5K
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 28-SO
Rise / Fall Time (Typ): 90ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| DMN10H220LQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.59 грн |
| 6000+ | 5.00 грн |
| 9000+ | 4.65 грн |
| 15000+ | 4.19 грн |
| 21000+ | 4.17 грн |
| 30000+ | 4.01 грн |
| DMN10H220LQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
на замовлення 31564 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.02 грн |
| 19+ | 18.00 грн |
| 100+ | 8.58 грн |
| 500+ | 7.15 грн |
| 1000+ | 6.71 грн |
| DMN10H220LVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.87A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.67W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Description: MOSFET N-CH 100V 1.87A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.67W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.93 грн |
| 6000+ | 14.09 грн |
| 9000+ | 13.81 грн |
| 15000+ | 11.95 грн |
| 21000+ | 11.64 грн |
| DMN10H220LVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.87A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.67W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Description: MOSFET N-CH 100V 1.87A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.67W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
на замовлення 21009 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 66.90 грн |
| 10+ | 39.97 грн |
| 100+ | 25.85 грн |
| 500+ | 18.57 грн |
| 1000+ | 16.73 грн |
| DMN10H220LQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.50 грн |
| DMN10H220LQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
на замовлення 15569 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.02 грн |
| 19+ | 18.00 грн |
| 100+ | 11.32 грн |
| 500+ | 7.90 грн |
| 1000+ | 7.02 грн |
| 2000+ | 6.28 грн |
| 5000+ | 5.38 грн |
| DMN10H220LFDF-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.99 грн |
| DMN10H220LFVW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| DMN10H220LFVW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 12.01 грн |
| 4000+ | 10.51 грн |
| 6000+ | 9.98 грн |
| 10000+ | 8.80 грн |
| 14000+ | 8.46 грн |
| 20000+ | 8.14 грн |
| DMN10H220LDV-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Description: MOSFET 2N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
товару немає в наявності
В кошику
од. на суму грн.
| DMN10H220LDV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Description: MOSFET 2N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 14.37 грн |
| 4000+ | 12.61 грн |
| 6000+ | 11.99 грн |
| 10000+ | 10.60 грн |
| 14000+ | 10.21 грн |
| ZXTP01500BGQTA |
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Виробник: Diodes Incorporated
Description: PWRHIVOLTAGETRANSISTORSOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 3 W
Qualification: AEC-Q101
Description: PWRHIVOLTAGETRANSISTORSOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 3 W
Qualification: AEC-Q101
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| ZXTP01500BGQTA |
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Виробник: Diodes Incorporated
Description: PWRHIVOLTAGETRANSISTORSOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 3 W
Qualification: AEC-Q101
Description: PWRHIVOLTAGETRANSISTORSOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 3 W
Qualification: AEC-Q101
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| 74AHCT1G00W5-7 |
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Виробник: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.10 грн |
| 6000+ | 3.44 грн |
| 15000+ | 2.92 грн |
| 30000+ | 2.58 грн |
| 75000+ | 2.42 грн |
| 150000+ | 2.10 грн |
| 74AHCT1G00W5-7 |
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Виробник: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 152782 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 24.01 грн |
| 18+ | 18.50 грн |
| 25+ | 15.46 грн |
| 100+ | 9.19 грн |
| 250+ | 7.09 грн |
| 500+ | 6.05 грн |
| 1000+ | 4.04 грн |
| AP64501QSP-EVM |
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Виробник: Diodes Incorporated
Description: EVAL BOARD FOR AP64501Q
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 5A
Contents: Board(s)
Frequency - Switching: 570kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64501Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR AP64501Q
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 5A
Contents: Board(s)
Frequency - Switching: 570kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64501Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3111.54 грн |
| PI3USB3000ZUAEX |
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Виробник: Diodes Incorporated
Description: USB2 SWITCH U-QFN1520-10 T&R 3K
Features: USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 5.5GHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: USB2 SWITCH U-QFN1520-10 T&R 3K
Features: USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 5.5GHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
на замовлення 531000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 31.17 грн |
| 6000+ | 29.30 грн |
| 9000+ | 28.94 грн |
| 15000+ | 26.79 грн |
| 21000+ | 26.57 грн |
| PI3USB3000ZUAEX |
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Виробник: Diodes Incorporated
Description: USB2 SWITCH U-QFN1520-10 T&R 3K
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 5.5GHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: USB2 SWITCH U-QFN1520-10 T&R 3K
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 5.5GHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
на замовлення 533441 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 66.90 грн |
| 10+ | 46.08 грн |
| 25+ | 41.49 грн |
| 100+ | 34.24 грн |
| 250+ | 32.00 грн |
| 500+ | 30.65 грн |
| 1000+ | 30.06 грн |
| B290AE-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 90 V
Description: DIODE SCHOTTKY 90V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 90 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 5.13 грн |
| 10000+ | 4.84 грн |
| B290AE-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 90 V
Description: DIODE SCHOTTKY 90V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 90 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.31 грн |
| 17+ | 20.23 грн |
| 100+ | 12.74 грн |
| 500+ | 8.92 грн |
| 1000+ | 7.94 грн |
| 2000+ | 7.12 грн |
| PI6ULS5V9509UEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 3V ~ 5.5V
Applications: I2C
Current - Supply: 3mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 6 pF
Description: IC REDRIVER I2C 1CH 400KHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 3V ~ 5.5V
Applications: I2C
Current - Supply: 3mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 6 pF
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| PI6ULS5V9509UEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 3V ~ 5.5V
Applications: I2C
Current - Supply: 3mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 6 pF
Description: IC REDRIVER I2C 1CH 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 3V ~ 5.5V
Applications: I2C
Current - Supply: 3mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 6 pF
на замовлення 1155 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.80 грн |
| 10+ | 90.68 грн |
| 25+ | 76.15 грн |
| 100+ | 56.03 грн |
| 250+ | 48.45 грн |
| 500+ | 43.78 грн |
| 1000+ | 39.22 грн |
| DMN2036UCB4-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH X2-WLB1616
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Supplier Device Package: X2-WLB1616-4
Description: MOSFET 2N-CH X2-WLB1616
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Supplier Device Package: X2-WLB1616-4
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.49 грн |
| 6000+ | 13.72 грн |
| 9000+ | 13.11 грн |
| 15000+ | 11.66 грн |
| 21000+ | 11.54 грн |
| DMN2036UCB4-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH X2-WLB1616
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Supplier Device Package: X2-WLB1616-4
Description: MOSFET 2N-CH X2-WLB1616
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Supplier Device Package: X2-WLB1616-4
на замовлення 41726 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 66.04 грн |
| 10+ | 39.56 грн |
| 100+ | 25.73 грн |
| 500+ | 18.54 грн |
| 1000+ | 16.73 грн |
| 1.5KE12CA-B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 10.2VWM 16.7VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 10.2VWM 16.7VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| FD6250009 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 62.5000MHZ CMOS SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 25mA
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 62.5 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 62.5000MHZ CMOS SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 25mA
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 62.5 MHz
Base Resonator: Crystal
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| PI2DBS32412ZTFEX |
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Виробник: Diodes Incorporated
Description: PCIE SWITCH U-QFN2048-32 T&R 3.5
Features: Bi-Directional, USB 3.0, USB 3.1
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: PCIe, USB
Supplier Device Package: 32-QFN (2x4.8)
Voltage - Supply, Single (V+): 1.8V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: PCIE SWITCH U-QFN2048-32 T&R 3.5
Features: Bi-Directional, USB 3.0, USB 3.1
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: PCIe, USB
Supplier Device Package: 32-QFN (2x4.8)
Voltage - Supply, Single (V+): 1.8V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
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од. на суму грн.
























