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AP2810AMM-G1 AP2810AMM-G1 Diodes Incorporated AP2810.pdf Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Features: Load Discharge, Status Flag
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 60mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
товар відсутній
AP2815AMM-G1 AP2815AMM-G1 Diodes Incorporated AP2815.pdf Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Features: Load Discharge, Status Flag
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 60mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
товар відсутній
DMP510DLW-13 DMP510DLW-13 Diodes Incorporated DMP510DLW.pdf Description: MOSFET BVDSS: 41V-60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 174mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): ±20V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 140000 шт:
термін постачання 21-31 дні (днів)
10000+2.21 грн
30000+ 2.09 грн
50000+ 1.88 грн
100000+ 1.56 грн
Мінімальне замовлення: 10000
DMP510DLW-7 DMP510DLW-7 Diodes Incorporated DMP510DLW.pdf Description: MOSFET BVDSS: 41V-60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 174mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): ±20V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 162000 шт:
термін постачання 21-31 дні (днів)
3000+2.87 грн
6000+ 2.56 грн
9000+ 2.13 грн
30000+ 1.96 грн
75000+ 1.76 грн
150000+ 1.53 грн
Мінімальне замовлення: 3000
DMTH4014LPDQ-13 DMTH4014LPDQ-13 Diodes Incorporated DMTH4014LPDQ.pdf Description: MOSFET 2N-CH 40V 10.6A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+28.66 грн
Мінімальне замовлення: 2500
DMTH4014LPDQ-13 DMTH4014LPDQ-13 Diodes Incorporated DMTH4014LPDQ.pdf Description: MOSFET 2N-CH 40V 10.6A POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
5+69.42 грн
10+ 54.62 грн
100+ 42.46 грн
500+ 33.77 грн
1000+ 27.51 грн
Мінімальне замовлення: 5
74AUP2G3404FW4-7 74AUP2G3404FW4-7 Diodes Incorporated 74AUP2G3404.pdf Description: IC BUFFER/INVERTER SGL 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Buffer/Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2 Input (1, 1)
Schmitt Trigger Input: No
Supplier Device Package: X2-DFN1010-6
Number of Circuits: 2
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
5000+5.62 грн
10000+ 4.93 грн
25000+ 4.61 грн
50000+ 3.88 грн
125000+ 3.73 грн
Мінімальне замовлення: 5000
74AUP2G3404FW4-7 74AUP2G3404FW4-7 Diodes Incorporated 74AUP2G3404.pdf Description: IC BUFFER/INVERTER SGL 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Buffer/Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2 Input (1, 1)
Schmitt Trigger Input: No
Supplier Device Package: X2-DFN1010-6
Number of Circuits: 2
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
11+27.32 грн
15+ 19.34 грн
25+ 17.49 грн
100+ 11.34 грн
250+ 9.55 грн
500+ 7.76 грн
1000+ 5.87 грн
2500+ 5.29 грн
Мінімальне замовлення: 11
74LVC06AT14-13 74LVC06AT14-13 Diodes Incorporated 74LVC06A.pdf Description: IC HEX INVERTER O-D 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
на замовлення 47430 шт:
термін постачання 21-31 дні (днів)
12+25.85 грн
14+ 20.34 грн
25+ 18.6 грн
100+ 12.99 грн
250+ 11.77 грн
500+ 9.74 грн
1000+ 7.18 грн
Мінімальне замовлення: 12
GBU15L06-TU Diodes Incorporated Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
FZT591ATA FZT591ATA Diodes Incorporated FZT591A.pdf Description: TRANS PNP 40V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
1000+19.2 грн
2000+ 16.47 грн
5000+ 15.6 грн
10000+ 13.56 грн
25000+ 13.42 грн
Мінімальне замовлення: 1000
FZT591ATA FZT591ATA Diodes Incorporated FZT591A.pdf Description: TRANS PNP 40V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
на замовлення 30488 шт:
термін постачання 21-31 дні (днів)
7+45.05 грн
10+ 37.55 грн
100+ 26 грн
500+ 20.39 грн
Мінімальне замовлення: 7
MBRB10150CT MBRB10150CT Diodes Incorporated MBRB10150CT.pdf Description: DIODE ARR SCHOTT 150V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
7+46.53 грн
10+ 38.62 грн
Мінімальне замовлення: 7
MBRB10150CT MBRB10150CT Diodes Incorporated MBRB10150CT.pdf Description: DIODE ARR SCHOTT 150V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
D10V0H1U2LP-7B D10V0H1U2LP-7B Diodes Incorporated D10V0H1U2LP.pdf Description: TVS DIODE 10VWM 20VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
10000+3.54 грн
30000+ 3.35 грн
50000+ 3.01 грн
100000+ 2.5 грн
Мінімальне замовлення: 10000
D10V0H1U2LP-7B D10V0H1U2LP-7B Diodes Incorporated D10V0H1U2LP.pdf Description: TVS DIODE 10VWM 20VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
11+27.32 грн
16+ 18.13 грн
100+ 8.83 грн
500+ 6.91 грн
1000+ 4.8 грн
2000+ 4.16 грн
5000+ 3.79 грн
Мінімальне замовлення: 11
BZT52C27Q-7-F BZT52C27Q-7-F Diodes Incorporated ds18004.pdf Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
3000+2.61 грн
6000+ 2.33 грн
9000+ 1.93 грн
30000+ 1.78 грн
75000+ 1.6 грн
Мінімальне замовлення: 3000
BZT52C27Q-7-F BZT52C27Q-7-F Diodes Incorporated ds18004.pdf Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
на замовлення 86998 шт:
термін постачання 21-31 дні (днів)
20+15.51 грн
28+ 10.24 грн
100+ 4.99 грн
500+ 3.91 грн
1000+ 2.72 грн
Мінімальне замовлення: 20
BZT52C27SQ-7-F BZT52C27SQ-7-F Diodes Incorporated Description: DIODE ZENER 27V 200MW SOD323
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
товар відсутній
FES2JD_HF FES2JD_HF Diodes Incorporated Description: SUPERFAST RECOVERY RECTIFIER DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
10000+5.81 грн
30000+ 5.23 грн
50000+ 4.69 грн
Мінімальне замовлення: 10000
ES2JA_HF ES2JA_HF Diodes Incorporated ES2DA-ES2JA_LS.pdf Description: SUPERFAST RECOVERY RECTIFIER SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
LL4151-7 LL4151-7 Diodes Incorporated LL4151.pdf Description: DIODE SWITCH 50V 500MW MINIMELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
AN431AN-ATRE1 AN431AN-ATRE1 Diodes Incorporated AN431.pdf Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товар відсутній
AN431AN-ATRE1 AN431AN-ATRE1 Diodes Incorporated AN431.pdf Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 2555 шт:
термін постачання 21-31 дні (днів)
11+28.8 грн
13+ 23.54 грн
25+ 21.93 грн
100+ 16.46 грн
250+ 15.29 грн
500+ 12.94 грн
1000+ 9.83 грн
Мінімальне замовлення: 11
BABS140 BABS140 Diodes Incorporated Description: PLANAR SCHOTTKY RECTIFIER ABS/SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
товар відсутній
DMN2450UFB4-7B DMN2450UFB4-7B Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+2.73 грн
Мінімальне замовлення: 10000
DMN2450UFB4-7B DMN2450UFB4-7B Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 26221 шт:
термін постачання 21-31 дні (днів)
14+21.42 грн
21+ 13.94 грн
100+ 6.81 грн
500+ 5.33 грн
1000+ 3.7 грн
2000+ 3.21 грн
5000+ 2.93 грн
Мінімальне замовлення: 14
DMN2450UFB4-7R DMN2450UFB4-7R Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 411000 шт:
термін постачання 21-31 дні (днів)
3000+3.55 грн
6000+ 3.17 грн
9000+ 2.63 грн
30000+ 2.42 грн
75000+ 2.18 грн
150000+ 1.89 грн
Мінімальне замовлення: 3000
DMN2450UFB4-7R DMN2450UFB4-7R Diodes Incorporated DMN2450UFB4.pdf Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 411062 шт:
термін постачання 21-31 дні (днів)
14+21.42 грн
21+ 13.94 грн
100+ 6.81 грн
500+ 5.33 грн
1000+ 3.7 грн
Мінімальне замовлення: 14
DMN2451UFDQ-13 DMN2451UFDQ-13 Diodes Incorporated DMN2451UFDQ.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
товар відсутній
DMN2451UFDQ-7 DMN2451UFDQ-7 Diodes Incorporated DMN2451UFDQ.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
на замовлення 4746000 шт:
термін постачання 21-31 дні (днів)
3000+5.86 грн
6000+ 5.4 грн
9000+ 4.67 грн
30000+ 4.3 грн
75000+ 3.56 грн
150000+ 3.5 грн
Мінімальне замовлення: 3000
FN2450038 FN2450038 Diodes Incorporated FN2450038.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
товар відсутній
FN2450045 FN2450045 Diodes Incorporated FN2450045.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
товар відсутній
FN2450055Z FN2450055Z Diodes Incorporated FN2450055Z.pdf Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Current - Supply (Max): 7mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
товар відсутній
FD5000067 FD5000067 Diodes Incorporated FD5000067.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.8V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
товар відсутній
FD5000051 FD5000051 Diodes Incorporated FD_3-3V.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
1000+55.19 грн
Мінімальне замовлення: 1000
GB2400030 GB2400030 Diodes Incorporated GB_GG.pdf Description: CRYSTAL 24.0000MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 24 MHz
товар відсутній
GB2400038 GB2400038 Diodes Incorporated GB_GG.pdf Description: CRYSTAL 24.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24 MHz
товар відсутній
1N5406G_HF 1N5406G_HF Diodes Incorporated Description: STANDARD RECOVERY RECTIFIER DO-2
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 242400 шт:
термін постачання 21-31 дні (днів)
1200+7.71 грн
2400+ 6.68 грн
6000+ 6.31 грн
12000+ 5.4 грн
30000+ 5.05 грн
60000+ 4.53 грн
120000+ 4.28 грн
Мінімальне замовлення: 1200
FD5000060 FD5000060 Diodes Incorporated FD_3-3V.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 90°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
товар відсутній
FR1120004 Diodes Incorporated FR_3-3V.pdf Description: XTAL OSC XO 11.2896MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 11.2896 MHz
Base Resonator: Crystal
товар відсутній
FK2450013Q FK2450013Q Diodes Incorporated FK2450013Q.pdf Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
товар відсутній
1N5399S_HF 1N5399S_HF Diodes Incorporated Description: STANDARD RECOVERY RECTIFIER DO-4
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
SBR60A200CT SBR60A200CT Diodes Incorporated SBR60A200CT.pdf Description: DIODE ARR SBR 200V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 6117 шт:
термін постачання 21-31 дні (днів)
2+270.29 грн
50+ 206.19 грн
100+ 176.74 грн
500+ 147.43 грн
1000+ 126.24 грн
2000+ 118.87 грн
5000+ 112.17 грн
Мінімальне замовлення: 2
SBR60A150CT-G SBR60A150CT-G Diodes Incorporated SBR60A150CT.pdf Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
товар відсутній
SBR60A60CT-G SBR60A60CT-G Diodes Incorporated SBR60A60CT.pdf Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
SBR60A300CT-2223 SBR60A300CT-2223 Diodes Incorporated Description: DIODE ARR SBR 300V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
товар відсутній
SBR60A60CT-G-2223 SBR60A60CT-G-2223 Diodes Incorporated Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
SBR60A150CT-2223 SBR60A150CT-2223 Diodes Incorporated Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
товар відсутній
SBR60A60CT-2223 SBR60A60CT-2223 Diodes Incorporated Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
FR1220009 Diodes Incorporated FR_3-3V.pdf Description: XTAL OSC XO 12.2880MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 12.288 MHz
Base Resonator: Crystal
товар відсутній
ZXTN5551ZTA ZXTN5551ZTA Diodes Incorporated ZXTN5551Z.pdf Description: TRANS NPN 160V 0.6A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.2 W
на замовлення 91000 шт:
термін постачання 21-31 дні (днів)
1000+9.37 грн
2000+ 8.3 грн
5000+ 7.96 грн
10000+ 6.72 грн
25000+ 6.62 грн
50000+ 6.22 грн
Мінімальне замовлення: 1000
DMTH10H032LFVW-7 DMTH10H032LFVW-7 Diodes Incorporated DMTH10H032LFVW.pdf Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+15.7 грн
Мінімальне замовлення: 2000
DMTH10H032LFVWQ-7 DMTH10H032LFVWQ-7 Diodes Incorporated DMTH10H032LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
товар відсутній
DMTH10H032LFVWQ-13 DMTH10H032LFVWQ-13 Diodes Incorporated DMTH10H032LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
7+45.79 грн
10+ 38.54 грн
100+ 26.73 грн
500+ 20.95 грн
1000+ 17.83 грн
2000+ 15.88 грн
5000+ 14.8 грн
10000+ 13.7 грн
Мінімальне замовлення: 7
DMT10H032LDV-7 DMT10H032LDV-7 Diodes Incorporated DMT10H032LDV.pdf Description: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2000+24.14 грн
6000+ 22.03 грн
10000+ 20.4 грн
Мінімальне замовлення: 2000
DMTH10H032LPDW-13 DMTH10H032LPDW-13 Diodes Incorporated DMTH10H032LPDW.pdf Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+26.81 грн
Мінімальне замовлення: 2500
DMTH10H032LPDWQ-13 DMTH10H032LPDWQ-13 Diodes Incorporated DMTH10H032LPDWQ.pdf Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+28.73 грн
Мінімальне замовлення: 2500
DMHT10H032LFJ-13 Diodes Incorporated DMHT10H032LFJ.pdf Description: MOSFET 4N-CH 100V 6A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerVDFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN5045-12 (Type C)
товар відсутній
SMBJ85AQ-13-F SMBJ85AQ-13-F Diodes Incorporated ds40740.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
AP2810AMM-G1 AP2810.pdf
AP2810AMM-G1
Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Features: Load Discharge, Status Flag
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 60mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
товар відсутній
AP2815AMM-G1 AP2815.pdf
AP2815AMM-G1
Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Features: Load Discharge, Status Flag
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 60mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
товар відсутній
DMP510DLW-13 DMP510DLW.pdf
DMP510DLW-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 174mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): ±20V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 140000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+2.21 грн
30000+ 2.09 грн
50000+ 1.88 грн
100000+ 1.56 грн
Мінімальне замовлення: 10000
DMP510DLW-7 DMP510DLW.pdf
DMP510DLW-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 174mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): ±20V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 162000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.87 грн
6000+ 2.56 грн
9000+ 2.13 грн
30000+ 1.96 грн
75000+ 1.76 грн
150000+ 1.53 грн
Мінімальне замовлення: 3000
DMTH4014LPDQ-13 DMTH4014LPDQ.pdf
DMTH4014LPDQ-13
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+28.66 грн
Мінімальне замовлення: 2500
DMTH4014LPDQ-13 DMTH4014LPDQ.pdf
DMTH4014LPDQ-13
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+69.42 грн
10+ 54.62 грн
100+ 42.46 грн
500+ 33.77 грн
1000+ 27.51 грн
Мінімальне замовлення: 5
74AUP2G3404FW4-7 74AUP2G3404.pdf
74AUP2G3404FW4-7
Виробник: Diodes Incorporated
Description: IC BUFFER/INVERTER SGL 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Buffer/Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2 Input (1, 1)
Schmitt Trigger Input: No
Supplier Device Package: X2-DFN1010-6
Number of Circuits: 2
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+5.62 грн
10000+ 4.93 грн
25000+ 4.61 грн
50000+ 3.88 грн
125000+ 3.73 грн
Мінімальне замовлення: 5000
74AUP2G3404FW4-7 74AUP2G3404.pdf
74AUP2G3404FW4-7
Виробник: Diodes Incorporated
Description: IC BUFFER/INVERTER SGL 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Buffer/Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2 Input (1, 1)
Schmitt Trigger Input: No
Supplier Device Package: X2-DFN1010-6
Number of Circuits: 2
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+27.32 грн
15+ 19.34 грн
25+ 17.49 грн
100+ 11.34 грн
250+ 9.55 грн
500+ 7.76 грн
1000+ 5.87 грн
2500+ 5.29 грн
Мінімальне замовлення: 11
74LVC06AT14-13 74LVC06A.pdf
74LVC06AT14-13
Виробник: Diodes Incorporated
Description: IC HEX INVERTER O-D 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
на замовлення 47430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.85 грн
14+ 20.34 грн
25+ 18.6 грн
100+ 12.99 грн
250+ 11.77 грн
500+ 9.74 грн
1000+ 7.18 грн
Мінімальне замовлення: 12
GBU15L06-TU
Виробник: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
FZT591ATA FZT591A.pdf
FZT591ATA
Виробник: Diodes Incorporated
Description: TRANS PNP 40V 1A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+19.2 грн
2000+ 16.47 грн
5000+ 15.6 грн
10000+ 13.56 грн
25000+ 13.42 грн
Мінімальне замовлення: 1000
FZT591ATA FZT591A.pdf
FZT591ATA
Виробник: Diodes Incorporated
Description: TRANS PNP 40V 1A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
на замовлення 30488 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+45.05 грн
10+ 37.55 грн
100+ 26 грн
500+ 20.39 грн
Мінімальне замовлення: 7
MBRB10150CT MBRB10150CT.pdf
MBRB10150CT
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 150V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+46.53 грн
10+ 38.62 грн
Мінімальне замовлення: 7
MBRB10150CT MBRB10150CT.pdf
MBRB10150CT
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 150V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
D10V0H1U2LP-7B D10V0H1U2LP.pdf
D10V0H1U2LP-7B
Виробник: Diodes Incorporated
Description: TVS DIODE 10VWM 20VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+3.54 грн
30000+ 3.35 грн
50000+ 3.01 грн
100000+ 2.5 грн
Мінімальне замовлення: 10000
D10V0H1U2LP-7B D10V0H1U2LP.pdf
D10V0H1U2LP-7B
Виробник: Diodes Incorporated
Description: TVS DIODE 10VWM 20VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+27.32 грн
16+ 18.13 грн
100+ 8.83 грн
500+ 6.91 грн
1000+ 4.8 грн
2000+ 4.16 грн
5000+ 3.79 грн
Мінімальне замовлення: 11
BZT52C27Q-7-F ds18004.pdf
BZT52C27Q-7-F
Виробник: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.61 грн
6000+ 2.33 грн
9000+ 1.93 грн
30000+ 1.78 грн
75000+ 1.6 грн
Мінімальне замовлення: 3000
BZT52C27Q-7-F ds18004.pdf
BZT52C27Q-7-F
Виробник: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
на замовлення 86998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+15.51 грн
28+ 10.24 грн
100+ 4.99 грн
500+ 3.91 грн
1000+ 2.72 грн
Мінімальне замовлення: 20
BZT52C27SQ-7-F
BZT52C27SQ-7-F
Виробник: Diodes Incorporated
Description: DIODE ZENER 27V 200MW SOD323
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
товар відсутній
FES2JD_HF
FES2JD_HF
Виробник: Diodes Incorporated
Description: SUPERFAST RECOVERY RECTIFIER DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+5.81 грн
30000+ 5.23 грн
50000+ 4.69 грн
Мінімальне замовлення: 10000
ES2JA_HF ES2DA-ES2JA_LS.pdf
ES2JA_HF
Виробник: Diodes Incorporated
Description: SUPERFAST RECOVERY RECTIFIER SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
LL4151-7 LL4151.pdf
LL4151-7
Виробник: Diodes Incorporated
Description: DIODE SWITCH 50V 500MW MINIMELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
AN431AN-ATRE1 AN431.pdf
AN431AN-ATRE1
Виробник: Diodes Incorporated
Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товар відсутній
AN431AN-ATRE1 AN431.pdf
AN431AN-ATRE1
Виробник: Diodes Incorporated
Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 2555 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.8 грн
13+ 23.54 грн
25+ 21.93 грн
100+ 16.46 грн
250+ 15.29 грн
500+ 12.94 грн
1000+ 9.83 грн
Мінімальне замовлення: 11
BABS140
BABS140
Виробник: Diodes Incorporated
Description: PLANAR SCHOTTKY RECTIFIER ABS/SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
товар відсутній
DMN2450UFB4-7B DMN2450UFB4.pdf
DMN2450UFB4-7B
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+2.73 грн
Мінімальне замовлення: 10000
DMN2450UFB4-7B DMN2450UFB4.pdf
DMN2450UFB4-7B
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 26221 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+21.42 грн
21+ 13.94 грн
100+ 6.81 грн
500+ 5.33 грн
1000+ 3.7 грн
2000+ 3.21 грн
5000+ 2.93 грн
Мінімальне замовлення: 14
DMN2450UFB4-7R DMN2450UFB4.pdf
DMN2450UFB4-7R
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 411000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.55 грн
6000+ 3.17 грн
9000+ 2.63 грн
30000+ 2.42 грн
75000+ 2.18 грн
150000+ 1.89 грн
Мінімальне замовлення: 3000
DMN2450UFB4-7R DMN2450UFB4.pdf
DMN2450UFB4-7R
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 411062 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+21.42 грн
21+ 13.94 грн
100+ 6.81 грн
500+ 5.33 грн
1000+ 3.7 грн
Мінімальне замовлення: 14
DMN2451UFDQ-13 DMN2451UFDQ.pdf
DMN2451UFDQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
товар відсутній
DMN2451UFDQ-7 DMN2451UFDQ.pdf
DMN2451UFDQ-7
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
на замовлення 4746000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.86 грн
6000+ 5.4 грн
9000+ 4.67 грн
30000+ 4.3 грн
75000+ 3.56 грн
150000+ 3.5 грн
Мінімальне замовлення: 3000
FN2450038 FN2450038.pdf
FN2450038
Виробник: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
товар відсутній
FN2450045 FN2450045.pdf
FN2450045
Виробник: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 24.576 MHz
Base Resonator: Crystal
товар відсутній
FN2450055Z FN2450055Z.pdf
FN2450055Z
Виробник: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Current - Supply (Max): 7mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
товар відсутній
FD5000067 FD5000067.pdf
FD5000067
Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.8V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
товар відсутній
FD5000051 FD_3-3V.pdf
FD5000051
Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+55.19 грн
Мінімальне замовлення: 1000
GB2400030 GB_GG.pdf
GB2400030
Виробник: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 24 MHz
товар відсутній
GB2400038 GB_GG.pdf
GB2400038
Виробник: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 24 MHz
товар відсутній
1N5406G_HF
1N5406G_HF
Виробник: Diodes Incorporated
Description: STANDARD RECOVERY RECTIFIER DO-2
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 242400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1200+7.71 грн
2400+ 6.68 грн
6000+ 6.31 грн
12000+ 5.4 грн
30000+ 5.05 грн
60000+ 4.53 грн
120000+ 4.28 грн
Мінімальне замовлення: 1200
FD5000060 FD_3-3V.pdf
FD5000060
Виробник: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 90°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 50 MHz
Base Resonator: Crystal
товар відсутній
FR1120004 FR_3-3V.pdf
Виробник: Diodes Incorporated
Description: XTAL OSC XO 11.2896MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 11.2896 MHz
Base Resonator: Crystal
товар відсутній
FK2450013Q FK2450013Q.pdf
FK2450013Q
Виробник: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
товар відсутній
1N5399S_HF
1N5399S_HF
Виробник: Diodes Incorporated
Description: STANDARD RECOVERY RECTIFIER DO-4
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
SBR60A200CT SBR60A200CT.pdf
SBR60A200CT
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 200V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 6117 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+270.29 грн
50+ 206.19 грн
100+ 176.74 грн
500+ 147.43 грн
1000+ 126.24 грн
2000+ 118.87 грн
5000+ 112.17 грн
Мінімальне замовлення: 2
SBR60A150CT-G SBR60A150CT.pdf
SBR60A150CT-G
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
товар відсутній
SBR60A60CT-G SBR60A60CT.pdf
SBR60A60CT-G
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
SBR60A300CT-2223
SBR60A300CT-2223
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 300V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
товар відсутній
SBR60A60CT-G-2223
SBR60A60CT-G-2223
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
SBR60A150CT-2223
SBR60A150CT-2223
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 150V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
товар відсутній
SBR60A60CT-2223
SBR60A60CT-2223
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
FR1220009 FR_3-3V.pdf
Виробник: Diodes Incorporated
Description: XTAL OSC XO 12.2880MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.3V
Frequency: 12.288 MHz
Base Resonator: Crystal
товар відсутній
ZXTN5551ZTA ZXTN5551Z.pdf
ZXTN5551ZTA
Виробник: Diodes Incorporated
Description: TRANS NPN 160V 0.6A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.2 W
на замовлення 91000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+9.37 грн
2000+ 8.3 грн
5000+ 7.96 грн
10000+ 6.72 грн
25000+ 6.62 грн
50000+ 6.22 грн
Мінімальне замовлення: 1000
DMTH10H032LFVW-7 DMTH10H032LFVW.pdf
DMTH10H032LFVW-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+15.7 грн
Мінімальне замовлення: 2000
DMTH10H032LFVWQ-7 DMTH10H032LFVWQ.pdf
DMTH10H032LFVWQ-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
товар відсутній
DMTH10H032LFVWQ-13 DMTH10H032LFVWQ.pdf
DMTH10H032LFVWQ-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI33
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+45.79 грн
10+ 38.54 грн
100+ 26.73 грн
500+ 20.95 грн
1000+ 17.83 грн
2000+ 15.88 грн
5000+ 14.8 грн
10000+ 13.7 грн
Мінімальне замовлення: 7
DMT10H032LDV-7 DMT10H032LDV.pdf
DMT10H032LDV-7
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+24.14 грн
6000+ 22.03 грн
10000+ 20.4 грн
Мінімальне замовлення: 2000
DMTH10H032LPDW-13 DMTH10H032LPDW.pdf
DMTH10H032LPDW-13
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+26.81 грн
Мінімальне замовлення: 2500
DMTH10H032LPDWQ-13 DMTH10H032LPDWQ.pdf
DMTH10H032LPDWQ-13
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+28.73 грн
Мінімальне замовлення: 2500
DMHT10H032LFJ-13 DMHT10H032LFJ.pdf
Виробник: Diodes Incorporated
Description: MOSFET 4N-CH 100V 6A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerVDFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN5045-12 (Type C)
товар відсутній
SMBJ85AQ-13-F ds40740.pdf
SMBJ85AQ-13-F
Виробник: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
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