Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72708) > Сторінка 609 з 1212
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DMT10H025SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 41.2A TO252 T&RPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMT10H017LPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 100V 54.7A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta), 78W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMT10H017LPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 100V 54.7A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta), 78W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2210 шт: термін постачання 21-31 дні (днів) |
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DMT10H032SFVW-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V |
на замовлення 3874 шт: термін постачання 21-31 дні (днів) |
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DMT10H072LFDF-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 4A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V |
на замовлення 141000 шт: термін постачання 21-31 дні (днів) |
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DMT10H072LFDF-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 4A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V |
на замовлення 142880 шт: термін постачання 21-31 дні (днів) |
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DMT10H025LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 47.2A TO252 T&RPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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DMT10H025LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 47.2A TO252 T&RPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 27345 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
на замовлення 14946 шт: термін постачання 21-31 дні (днів) |
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DMT10H009LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 13A/48A 8SO T&RPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V |
на замовлення 135000 шт: термін постачання 21-31 дні (днів) |
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DMT10H009LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 13A/48A 8SO T&RPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V |
на замовлення 137316 шт: термін постачання 21-31 дні (днів) |
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DMT10H010SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMT10H010SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V |
на замовлення 6674 шт: термін постачання 21-31 дні (днів) |
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SMCJ54CA-13-F | Diodes Incorporated |
Description: TVS DIODE 54VWM 87.1VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 282000 шт: термін постачання 21-31 дні (днів) |
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SMCJ54CA-13-F | Diodes Incorporated |
Description: TVS DIODE 54VWM 87.1VC SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 282230 шт: термін постачання 21-31 дні (днів) |
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1.5KE13CA-B | Diodes Incorporated |
Description: TVS DIODE 11.1VWM 18.2VC DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 82A Voltage - Reverse Standoff (Typ): 11.1V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 12.4V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDT660VD1-13 | Diodes Incorporated |
Description: DIODE SCHOT 60V 6A TO252 T&R 2.5Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-252 (DPAK) Type TH Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 6 A Current - Reverse Leakage @ Vr: 30 mA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZ14-7 | Diodes Incorporated |
Description: DIODE ZENER 14V 500MW SOD123Tolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11 V |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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DDZ14-7 | Diodes Incorporated |
Description: DIODE ZENER 14V 500MW SOD123Tolerance: ±3% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11 V |
на замовлення 68744 шт: термін постачання 21-31 дні (днів) |
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DDZ14B-7 | Diodes Incorporated |
Description: DIODE ZENER 14V 500MW SOD123Tolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZ14B-7 | Diodes Incorporated |
Description: DIODE ZENER 14V 500MW SOD123Tolerance: ±3% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11 V |
на замовлення 2250 шт: термін постачання 21-31 дні (днів) |
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DDZ14S-7 | Diodes Incorporated |
Description: DIODE ZENER 14V 200MW SOD323Tolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZ14S-7 | Diodes Incorporated |
Description: DIODE ZENER 14V 200MW SOD323Tolerance: ±3% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DXTP07100BFG-7 | Diodes Incorporated |
Description: TRANS PNP 100V 2A POWERDI3Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 140MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 900 mW Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DXTP07100BFG-7 | Diodes Incorporated |
Description: TRANS PNP 100V 2A POWERDI3Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 140MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 900 mW Qualification: AEC-Q101 |
на замовлення 11980 шт: термін постачання 21-31 дні (днів) |
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DXTP07100BFGQ-7 | Diodes Incorporated |
Description: PWR MID PERF TRANSISTOR POWERDI3Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 140MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.1 W Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DXTP07100BFGQ-7 | Diodes Incorporated |
Description: PWR MID PERF TRANSISTOR POWERDI3Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 140MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.1 W Qualification: AEC-Q101 |
на замовлення 5980 шт: термін постачання 21-31 дні (днів) |
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DXTP03060BFG-7 | Diodes Incorporated |
Description: PWR LOW SAT TRANSISTOR POWERDI33Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 50A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 120MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.07 W |
на замовлення 9980 шт: термін постачання 21-31 дні (днів) |
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DXTP03100CFG-7 | Diodes Incorporated |
Description: PWR MID PERF TRANSISTOR POWERDI3Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 380mV @ 400mA, 4A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.07 W |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DXTP03100CFG-7 | Diodes Incorporated |
Description: PWR MID PERF TRANSISTOR POWERDI3Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 380mV @ 400mA, 4A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.07 W |
на замовлення 11960 шт: термін постачання 21-31 дні (днів) |
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DXTP03060CFG-7 | Diodes Incorporated |
Description: PWR MID PERF TRANSISTOR POWERDI3Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 10mA, 2V Frequency - Transition: 120MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.07 W |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DXTP03060CFG-7 | Diodes Incorporated |
Description: PWR MID PERF TRANSISTOR POWERDI3Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 10mA, 2V Frequency - Transition: 120MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.07 W |
на замовлення 11980 шт: термін постачання 21-31 дні (днів) |
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DXTP03200BP5Q-13 | Diodes Incorporated |
Description: PWR HI VOLTAGE TRANSISTOR PDI5 TPackaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 105MHz Supplier Device Package: PowerDI™ 5 Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 740 mW Qualification: AEC-Q101 |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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FL1200074 | Diodes Incorporated |
Description: CRYSTAL 12.0000MHZ 20PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 20pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 100 Ohms Frequency: 12 MHz |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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FL1200074 | Diodes Incorporated |
Description: CRYSTAL 12.0000MHZ 20PF SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Load Capacitance: 20pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 100 Ohms Frequency: 12 MHz |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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SMBJ7.5CAQ-13-F | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR PPPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 46.5A Voltage - Reverse Standoff (Typ): 7.5V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.33V Voltage - Clamping (Max) @ Ipp: 13.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP7363-12E-13 | Diodes Incorporated |
Description: IC REG LIN 1.2V 1.5A SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 1.2V PSRR: 65dB ~ 61dB (120Hz ~ 1kHz) Voltage Dropout (Max): 0.24V @ 1.5A Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP7363-12E-13 | Diodes Incorporated |
Description: IC REG LIN 1.2V 1.5A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 1.2V PSRR: 65dB ~ 61dB (120Hz ~ 1kHz) Voltage Dropout (Max): 0.24V @ 1.5A Protection Features: Over Current, Over Temperature |
на замовлення 1683 шт: термін постачання 21-31 дні (днів) |
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AP7363-15E-13 | Diodes Incorporated |
Description: IC REG LINEAR 1.5V 1.5A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 1.5V PSRR: 65dB ~ 61dB (120Hz ~ 1kHz) Voltage Dropout (Max): 0.24V @ 1.5A Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP7363-15E-13 | Diodes Incorporated |
Description: IC REG LINEAR 1.5V 1.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 1.5V PSRR: 65dB ~ 61dB (120Hz ~ 1kHz) Voltage Dropout (Max): 0.24V @ 1.5A Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN4035LQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 40V 4.6A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN4035LQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 40V 4.6A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ6.0CAQ-13-F | Diodes Incorporated |
Description: TVS DIODE 6VWM 10.3VC SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 38.8A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: SMA Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ15CA-13 | Diodes Incorporated |
Description: TVS DIODE 15VWM 24.2VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 124A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.2V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ15CAQ-13 | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR PPPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 124A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.2V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ADTC144EUAQ-13 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ADTC144EUAQ-13 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 8615 шт: термін постачання 21-31 дні (днів) |
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DT2042-04SOQ-7 | Diodes Incorporated |
Description: DATALINE PROTECTION PP SOT26 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C Applications: Ethernet, USB Capacitance @ Frequency: 1.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOT-26 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 105W Power Line Protection: Yes Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DT2042-01CSP-7B | Diodes Incorporated |
Description: TVS DIODE 5VWM 7.4VC DSN1006-2Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.8pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: X3-DSN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 7.4V (Typ) Power - Peak Pulse: 50W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FL1200113Z | Diodes Incorporated |
Description: CRYSTAL 12.0000MHZ 30PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 30pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±30ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 12 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52C3V9-13-F | Diodes Incorporated |
Description: DIODE ZENER 3.9V 370MW SOD123Tolerance: ±5.13% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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BZT52C3V9-13-F | Diodes Incorporated |
Description: DIODE ZENER 3.9V 370MW SOD123Tolerance: ±5.13% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 188210 шт: термін постачання 21-31 дні (днів) |
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BZT52C3V9Q-7-F | Diodes Incorporated |
Description: DIODE ZENER 3.9V 370MW SOD123Tolerance: ±5.13% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 3105699 шт: термін постачання 21-31 дні (днів) |
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FL1200118 | Diodes Incorporated |
Description: CRYSTAL 12.0000MHZ 8PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±30ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 12 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDT10A45P5-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 45V 10A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 45 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDT10A45P5-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 45V 10A POWERDI 5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 45 V |
на замовлення 8732 шт: термін постачання 21-31 дні (днів) |
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SDT10A45P5-13D | Diodes Incorporated |
Description: DIODE SCHOTTKY 45V 10A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDT10A45P5-13D | Diodes Incorporated |
Description: DIODE SCHOTTKY 45V 10A POWERDI 5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 45 V |
на замовлення 4704 шт: термін постачання 21-31 дні (днів) |
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DMP1022UFDEQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 9.1A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V Qualification: AEC-Q101 |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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| DMT10H025SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 41.2A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 41.2A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.04 грн |
| 10+ | 44.18 грн |
| 100+ | 31.45 грн |
| 500+ | 22.76 грн |
| 1000+ | 20.58 грн |
| DMT10H017LPD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 54.7A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 54.7A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| DMT10H017LPD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 54.7A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 54.7A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2210 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 177.53 грн |
| 10+ | 110.42 грн |
| 100+ | 75.07 грн |
| 500+ | 56.25 грн |
| 1000+ | 51.69 грн |
| DMT10H032SFVW-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
на замовлення 3874 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.04 грн |
| 10+ | 41.05 грн |
| 100+ | 27.01 грн |
| 500+ | 19.49 грн |
| 1000+ | 17.60 грн |
| DMT10H072LFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Description: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
на замовлення 141000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.20 грн |
| 6000+ | 11.63 грн |
| 9000+ | 11.08 грн |
| 15000+ | 9.82 грн |
| 21000+ | 9.48 грн |
| 30000+ | 9.26 грн |
| DMT10H072LFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Description: MOSFET N-CH 100V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
на замовлення 142880 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.62 грн |
| 10+ | 52.03 грн |
| 100+ | 34.06 грн |
| 500+ | 24.72 грн |
| 1000+ | 22.39 грн |
| DMT10H025LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 47.2A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 47.2A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
Qualification: AEC-Q101
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 24.49 грн |
| 5000+ | 21.20 грн |
| 7500+ | 20.85 грн |
| 12500+ | 18.99 грн |
| DMT10H025LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 47.2A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 47.2A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
Qualification: AEC-Q101
на замовлення 27345 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.48 грн |
| 10+ | 56.74 грн |
| 100+ | 37.64 грн |
| 500+ | 27.43 грн |
| 1000+ | 24.89 грн |
| DMT10H015LFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 34.40 грн |
| 6000+ | 31.00 грн |
| DMT10H015LFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
на замовлення 14946 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.50 грн |
| 10+ | 78.54 грн |
| 100+ | 52.48 грн |
| 500+ | 38.76 грн |
| 1000+ | 35.38 грн |
| DMT10H009LSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 13A/48A 8SO T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Description: MOSFET N-CH 100V 13A/48A 8SO T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 33.87 грн |
| DMT10H009LSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 13A/48A 8SO T&R
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Description: MOSFET N-CH 100V 13A/48A 8SO T&R
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
на замовлення 137316 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.78 грн |
| 10+ | 70.78 грн |
| 100+ | 50.34 грн |
| 500+ | 37.23 грн |
| 1000+ | 34.00 грн |
| DMT10H010SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 35.37 грн |
| 5000+ | 31.83 грн |
| DMT10H010SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
на замовлення 6674 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.08 грн |
| 10+ | 80.61 грн |
| 100+ | 54.09 грн |
| 500+ | 40.10 грн |
| 1000+ | 36.67 грн |
| SMCJ54CA-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 54VWM 87.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 54VWM 87.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 282000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.45 грн |
| 6000+ | 10.74 грн |
| 9000+ | 9.98 грн |
| SMCJ54CA-13-F |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 54VWM 87.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 54VWM 87.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 282230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.46 грн |
| 10+ | 33.94 грн |
| 100+ | 21.94 грн |
| 500+ | 15.71 грн |
| 1000+ | 14.14 грн |
| 1.5KE13CA-B |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 11.1VWM 18.2VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 11.1VWM 18.2VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| SDT660VD1-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOT 60V 6A TO252 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252 (DPAK) Type TH
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 6 A
Current - Reverse Leakage @ Vr: 30 mA @ 60 V
Description: DIODE SCHOT 60V 6A TO252 T&R 2.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252 (DPAK) Type TH
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 6 A
Current - Reverse Leakage @ Vr: 30 mA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| DDZ14-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.31 грн |
| 6000+ | 2.95 грн |
| 9000+ | 2.45 грн |
| 30000+ | 2.26 грн |
| DDZ14-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
на замовлення 68744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.73 грн |
| 26+ | 12.97 грн |
| 100+ | 6.34 грн |
| 500+ | 4.96 грн |
| 1000+ | 3.45 грн |
| DDZ14B-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
товару немає в наявності
В кошику
од. на суму грн.
| DDZ14B-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.73 грн |
| 26+ | 12.97 грн |
| 100+ | 6.34 грн |
| 500+ | 4.96 грн |
| 1000+ | 3.45 грн |
| DDZ14S-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 14V 200MW SOD323
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
Description: DIODE ZENER 14V 200MW SOD323
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
товару немає в наявності
В кошику
од. на суму грн.
| DDZ14S-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 14V 200MW SOD323
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
Description: DIODE ZENER 14V 200MW SOD323
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11 V
товару немає в наявності
В кошику
од. на суму грн.
| DXTP07100BFG-7 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 100V 2A POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Qualification: AEC-Q101
Description: TRANS PNP 100V 2A POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 14.40 грн |
| 6000+ | 13.16 грн |
| 10000+ | 12.22 грн |
| DXTP07100BFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 100V 2A POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Qualification: AEC-Q101
Description: TRANS PNP 100V 2A POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Qualification: AEC-Q101
на замовлення 11980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.88 грн |
| 10+ | 35.18 грн |
| 100+ | 24.45 грн |
| 500+ | 17.91 грн |
| 1000+ | 14.56 грн |
| DXTP07100BFGQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 16.92 грн |
| DXTP07100BFGQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.60 грн |
| 10+ | 37.16 грн |
| 100+ | 25.73 грн |
| 500+ | 20.18 грн |
| 1000+ | 17.17 грн |
| DXTP03060BFG-7 |
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Виробник: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 50A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.07 W
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 50A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.07 W
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.46 грн |
| 10+ | 38.07 грн |
| 100+ | 26.35 грн |
| 500+ | 20.66 грн |
| 1000+ | 17.58 грн |
| DXTP03100CFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.07 W
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.07 W
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 17.81 грн |
| 6000+ | 16.25 грн |
| 10000+ | 15.05 грн |
| DXTP03100CFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.07 W
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.07 W
на замовлення 11960 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.31 грн |
| 10+ | 39.15 грн |
| 100+ | 27.08 грн |
| 500+ | 21.24 грн |
| 1000+ | 18.07 грн |
| DXTP03060CFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 10mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.07 W
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 10mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.07 W
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 17.99 грн |
| 6000+ | 16.41 грн |
| 10000+ | 15.20 грн |
| DXTP03060CFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 10mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.07 W
Description: PWR MID PERF TRANSISTOR POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 10mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.07 W
на замовлення 11980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.17 грн |
| 10+ | 39.48 грн |
| 100+ | 27.35 грн |
| 500+ | 21.45 грн |
| 1000+ | 18.25 грн |
| DXTP03200BP5Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: PWR HI VOLTAGE TRANSISTOR PDI5 T
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 105MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 740 mW
Qualification: AEC-Q101
Description: PWR HI VOLTAGE TRANSISTOR PDI5 T
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 105MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 740 mW
Qualification: AEC-Q101
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 18.70 грн |
| 10000+ | 16.68 грн |
| 25000+ | 16.51 грн |
| FL1200074 |
![]() |
Виробник: Diodes Incorporated
Description: CRYSTAL 12.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 12 MHz
Description: CRYSTAL 12.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 12 MHz
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.94 грн |
| 6000+ | 23.22 грн |
| 15000+ | 22.41 грн |
| FL1200074 |
![]() |
Виробник: Diodes Incorporated
Description: CRYSTAL 12.0000MHZ 20PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 12 MHz
Description: CRYSTAL 12.0000MHZ 20PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 12 MHz
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.74 грн |
| 10+ | 39.97 грн |
| 50+ | 36.02 грн |
| 100+ | 30.05 грн |
| 500+ | 28.55 грн |
| 1000+ | 24.04 грн |
| SMBJ7.5CAQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| AP7363-12E-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LIN 1.2V 1.5A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 1.2V 1.5A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| AP7363-12E-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LIN 1.2V 1.5A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 1.2V 1.5A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
на замовлення 1683 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.87 грн |
| 20+ | 16.52 грн |
| 25+ | 14.70 грн |
| 100+ | 11.90 грн |
| 250+ | 11.00 грн |
| 500+ | 10.45 грн |
| 1000+ | 9.83 грн |
| AP7363-15E-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.5V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.5V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| AP7363-15E-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.5V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.5V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 0.24V @ 1.5A
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| DMN4035LQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 4.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 720mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 4.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 720mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMN4035LQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 4.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 720mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 4.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 720mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ6.0CAQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 6VWM 10.3VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6VWM 10.3VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 9.63 грн |
| 10000+ | 7.92 грн |
| 15000+ | 7.81 грн |
| 25000+ | 7.23 грн |
| 35000+ | 7.08 грн |
| 3.0SMCJ15CA-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 15VWM 24.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 15VWM 24.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 46.17 грн |
| 6000+ | 43.64 грн |
| 3.0SMCJ15CAQ-13 |
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Виробник: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ADTC144EUAQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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В кошику
од. на суму грн.
| ADTC144EUAQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 8615 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.72 грн |
| 41+ | 8.18 грн |
| 100+ | 5.05 грн |
| 500+ | 3.45 грн |
| 1000+ | 3.03 грн |
| 2000+ | 2.68 грн |
| 5000+ | 2.26 грн |
| DT2042-04SOQ-7 |
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Виробник: Diodes Incorporated
Description: DATALINE PROTECTION PP SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C
Applications: Ethernet, USB
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 105W
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
Description: DATALINE PROTECTION PP SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C
Applications: Ethernet, USB
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 105W
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DT2042-01CSP-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 7.4VC DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-DSN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 7.4V (Typ)
Power - Peak Pulse: 50W
Power Line Protection: No
Description: TVS DIODE 5VWM 7.4VC DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-DSN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 7.4V (Typ)
Power - Peak Pulse: 50W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| FL1200113Z |
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Виробник: Diodes Incorporated
Description: CRYSTAL 12.0000MHZ 30PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 30pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 12 MHz
Description: CRYSTAL 12.0000MHZ 30PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 30pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 12 MHz
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В кошику
од. на суму грн.
| BZT52C3V9-13-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 3.9V 370MW SOD123
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 370MW SOD123
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.13 грн |
| 20000+ | 1.63 грн |
| 30000+ | 1.58 грн |
| 50000+ | 1.34 грн |
| 70000+ | 1.31 грн |
| BZT52C3V9-13-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 3.9V 370MW SOD123
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 370MW SOD123
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
на замовлення 188210 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 8.58 грн |
| 55+ | 6.03 грн |
| 127+ | 2.62 грн |
| 500+ | 2.33 грн |
| 1000+ | 2.13 грн |
| 2000+ | 2.09 грн |
| 5000+ | 2.03 грн |
| BZT52C3V9Q-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 3.9V 370MW SOD123
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 370MW SOD123
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
на замовлення 3105699 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.43 грн |
| 54+ | 6.19 грн |
| 112+ | 2.97 грн |
| 500+ | 2.76 грн |
| 1000+ | 2.72 грн |
| FL1200118 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 12.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 12 MHz
Description: CRYSTAL 12.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 12 MHz
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од. на суму грн.
| SDT10A45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 9.90 грн |
| SDT10A45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 10A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
на замовлення 8732 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.16 грн |
| 15+ | 22.55 грн |
| 100+ | 18.04 грн |
| 500+ | 12.82 грн |
| 1000+ | 11.49 грн |
| 2000+ | 10.46 грн |
| SDT10A45P5-13D |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
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| SDT10A45P5-13D |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 10A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
на замовлення 4704 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.17 грн |
| 12+ | 28.16 грн |
| 100+ | 18.04 грн |
| 500+ | 12.82 грн |
| 1000+ | 11.49 грн |
| 2000+ | 10.37 грн |
| DMP1022UFDEQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 9.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V
Qualification: AEC-Q101
Description: MOSFET P-CH 12V 9.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V
Qualification: AEC-Q101
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 19.01 грн |
| 6000+ | 17.02 грн |












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