Продукція > GOOD-ARK SEMICONDUCTOR > Всі товари виробника GOOD-ARK SEMICONDUCTOR (1667) > Сторінка 26 з 28
| Фото | Назва | Виробник | Інформація |
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SMF22A | Good-Ark Semiconductor |
Description: TVS DIODE 22VWM 35.5VC SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.63A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 2944 шт: термін постачання 21-31 дні (днів) |
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SMSZ4690 | Good-Ark Semiconductor |
Description: DIODE ZENER 5.6V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 4 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SMSZ4690 | Good-Ark Semiconductor |
Description: DIODE ZENER 5.6V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 4 V Qualification: AEC-Q101 |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
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SMSZ4699 | Good-Ark Semiconductor |
Description: DIODE ZENER 12V 500MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMSZ4699 | Good-Ark Semiconductor |
Description: DIODE ZENER 12V 500MW SOD123Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V Qualification: AEC-Q101 |
на замовлення 2847 шт: термін постачання 21-31 дні (днів) |
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SMURP1040 | Good-Ark Semiconductor |
Description: DIODE STANDARD 400V 10A 8POWQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: 8-PowerQFN (4.9x5.8) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMURP1040 | Good-Ark Semiconductor |
Description: DIODE STANDARD 400V 10A 8POWQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: 8-PowerQFN (4.9x5.8) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 4551 шт: термін постачання 21-31 дні (днів) |
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SSF02N15 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 1.4A, 150VPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
на замовлення 5725 шт: термін постачання 21-31 дні (днів) |
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SSF02N15 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 1.4A, 150VPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSF0910S | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 2.0A, 100VPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF0910S | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 2.0A, 100VPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF1341 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -3.5A, -12Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SSF1341 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -3.5A, -12Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V |
на замовлення 2377 шт: термін постачання 21-31 дні (днів) |
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SSF2116 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 20V 3.8A SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSF2116 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 20V 3.8A SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
на замовлення 1920 шт: термін постачання 21-31 дні (днів) |
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SSF2145CH6 | Good-Ark Semiconductor |
Description: MOSFET 20V 4.8A/2.9A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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SSF2145CH6 | Good-Ark Semiconductor |
Description: MOSFET 20V 4.8A/2.9A 6TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2215 | Good-Ark Semiconductor |
Description: MOSFET 2P-CH 20V 3A SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2215 | Good-Ark Semiconductor |
Description: MOSFET 2P-CH 20V 3A SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
на замовлення 2895 шт: термін постачання 21-31 дні (днів) |
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SSF2219Y | Good-Ark Semiconductor |
Description: MOSFET 2P-CH 20V 0.4A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 312mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2219Y | Good-Ark Semiconductor |
Description: MOSFET 2P-CH 20V 0.4A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 312mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 2982 шт: термін постачання 21-31 дні (днів) |
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SSF2220Y | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 20V 0.8A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 312W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2220Y | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 20V 0.8A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 312W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 2840 шт: термін постачання 21-31 дні (днів) |
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SSF2300 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSF2300 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
на замовлення 5469 шт: термін постачання 21-31 дні (днів) |
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SSF2302 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4A, 20V, SPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF2302 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4A, 20V, SPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
на замовлення 1744 шт: термін постачання 21-31 дні (днів) |
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SSF2307 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -6.50A, -2Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V |
на замовлення 2366 шт: термін постачання 21-31 дні (днів) |
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SSF2307 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -6.50A, -2Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF2311S | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4.7A, -20Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Tc) Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2311S | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4.7A, -20Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Tc) Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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SSF2314 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Tc) Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF2314 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Tc) Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSF2318E | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V |
на замовлення 2512 шт: термін постачання 21-31 дні (днів) |
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SSF2318E | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2319CJ1 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.45A, -2Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Power Dissipation (Max): 312mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSF2319CJ1 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.45A, -2Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Power Dissipation (Max): 312mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 4850 шт: термін постачання 21-31 дні (днів) |
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SSF2319GE | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.40A, -2Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Power Dissipation (Max): 275mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-723 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 7970 шт: термін постачання 21-31 дні (днів) |
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SSF2319GE | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.40A, -2Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Power Dissipation (Max): 275mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-723 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SSF2320Y | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Power Dissipation (Max): 312mW (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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SSF2320Y | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Power Dissipation (Max): 312mW (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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SSF2341E | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4A, -20V,Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2341E | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4A, -20V,Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V |
на замовлення 2580 шт: термін постачання 21-31 дні (днів) |
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SSF2429 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -5A, -20V,Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSF2429 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -5A, -20V,Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V |
на замовлення 5475 шт: термін постачання 21-31 дні (днів) |
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SSF3051G7 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4A, -30V,Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V Power Dissipation (Max): 1.7W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SSF3051G7 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4A, -30V,Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V Power Dissipation (Max): 1.7W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
на замовлення 1677 шт: термін постачання 21-31 дні (днів) |
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SSF3324 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 5.80A, 30VPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V Power Dissipation (Max): 1.15W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF3324 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 5.80A, 30VPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V Power Dissipation (Max): 1.15W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V |
на замовлення 2874 шт: термін постачання 21-31 дні (днів) |
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SSF3341 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4.2A, -30Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF3341 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4.2A, -30Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V |
на замовлення 2748 шт: термін постачання 21-31 дні (днів) |
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SSF3365 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -3A, -30V,Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSF3365 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -3A, -30V,Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V |
на замовлення 5278 шт: термін постачання 21-31 дні (днів) |
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SSF3402 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 5A, 30V, SPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSF3402 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 5A, 30V, SPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
на замовлення 3950 шт: термін постачання 21-31 дні (днів) |
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SSF3611E | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -12A, -30VPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V |
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В кошику од. на суму грн. | ||||||||||||||
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SSF3611E | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -12A, -30VPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V |
на замовлення 3540 шт: термін постачання 21-31 дні (днів) |
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SSF3714 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 30V 4A SOT23-6LPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSF3714 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 30V 4A SOT23-6LPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
на замовлення 4870 шт: термін постачання 21-31 дні (днів) |
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SSF3913S | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4A, -30V,Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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| SMF22A |
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Виробник: Good-Ark Semiconductor
Description: TVS DIODE 22VWM 35.5VC SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.63A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 22VWM 35.5VC SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.63A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 2944 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.65 грн |
| 34+ | 9.04 грн |
| 100+ | 5.57 грн |
| 500+ | 3.82 грн |
| 1000+ | 3.36 грн |
| SMSZ4690 |
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Виробник: Good-Ark Semiconductor
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.31 грн |
| 6000+ | 1.98 грн |
| 9000+ | 1.85 грн |
| SMSZ4690 |
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Виробник: Good-Ark Semiconductor
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Qualification: AEC-Q101
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.82 грн |
| 59+ | 5.12 грн |
| 100+ | 3.41 грн |
| 500+ | 2.42 грн |
| 1000+ | 2.16 грн |
| SMSZ4699 |
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Виробник: Good-Ark Semiconductor
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.23 грн |
| SMSZ4699 |
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Виробник: Good-Ark Semiconductor
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
на замовлення 2847 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.04 грн |
| 62+ | 4.90 грн |
| 100+ | 3.29 грн |
| 500+ | 2.34 грн |
| 1000+ | 2.09 грн |
| SMURP1040 |
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Виробник: Good-Ark Semiconductor
Description: DIODE STANDARD 400V 10A 8POWQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 10A 8POWQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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В кошику
од. на суму грн.
| SMURP1040 |
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Виробник: Good-Ark Semiconductor
Description: DIODE STANDARD 400V 10A 8POWQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 10A 8POWQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 4551 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.85 грн |
| 10+ | 41.28 грн |
| 100+ | 26.91 грн |
| 500+ | 19.46 грн |
| 1000+ | 17.60 грн |
| SSF02N15 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 5725 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.20 грн |
| 12+ | 27.12 грн |
| 25+ | 24.83 грн |
| 100+ | 17.34 грн |
| 250+ | 15.71 грн |
| 500+ | 13.00 грн |
| 1000+ | 9.59 грн |
| SSF02N15 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SSF0910S |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.53 грн |
| 6000+ | 5.94 грн |
| SSF0910S |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.73 грн |
| 15+ | 21.32 грн |
| 25+ | 19.20 грн |
| 100+ | 12.45 грн |
| 250+ | 10.49 грн |
| 500+ | 8.52 грн |
| 1000+ | 6.45 грн |
| SSF1341 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.5A, -12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V
Description: MOSFET, P-CH, SINGLE, -3.5A, -12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.88 грн |
| 6000+ | 4.09 грн |
| SSF1341 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.5A, -12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V
Description: MOSFET, P-CH, SINGLE, -3.5A, -12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V
на замовлення 2377 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.91 грн |
| 23+ | 13.11 грн |
| 28+ | 10.79 грн |
| 100+ | 7.64 грн |
| 250+ | 6.41 грн |
| 500+ | 5.65 грн |
| 1000+ | 4.93 грн |
| SSF2116 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 3.8A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET N/P-CH 20V 3.8A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SSF2116 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 3.8A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET N/P-CH 20V 3.8A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
на замовлення 1920 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.86 грн |
| 13+ | 23.35 грн |
| 25+ | 20.43 грн |
| 100+ | 12.42 грн |
| 250+ | 10.28 грн |
| 500+ | 8.22 грн |
| 1000+ | 6.20 грн |
| SSF2145CH6 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 20V 4.8A/2.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Description: MOSFET 20V 4.8A/2.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.60 грн |
| 19+ | 15.97 грн |
| 25+ | 13.17 грн |
| 100+ | 9.38 грн |
| 250+ | 7.90 грн |
| 500+ | 7.00 грн |
| 1000+ | 6.13 грн |
| SSF2145CH6 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 20V 4.8A/2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Description: MOSFET 20V 4.8A/2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.67 грн |
| SSF2215 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET 2P-CH 20V 3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.50 грн |
| SSF2215 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET 2P-CH 20V 3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
на замовлення 2895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.95 грн |
| 15+ | 21.24 грн |
| 25+ | 19.11 грн |
| 100+ | 12.40 грн |
| 250+ | 10.44 грн |
| 500+ | 8.48 грн |
| 1000+ | 6.42 грн |
| SSF2219Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 0.4A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2P-CH 20V 0.4A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.86 грн |
| SSF2219Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 0.4A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2P-CH 20V 0.4A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 2982 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.60 грн |
| 17+ | 18.76 грн |
| 25+ | 16.39 грн |
| 100+ | 9.95 грн |
| 250+ | 8.24 грн |
| 500+ | 6.59 грн |
| 1000+ | 4.97 грн |
| SSF2220Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 312W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 312W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.86 грн |
| SSF2220Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 312W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 312W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 2840 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.60 грн |
| 17+ | 18.76 грн |
| 25+ | 16.39 грн |
| 100+ | 9.95 грн |
| 250+ | 8.24 грн |
| 500+ | 6.59 грн |
| 1000+ | 4.97 грн |
| SSF2300 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.29 грн |
| 6000+ | 2.13 грн |
| 9000+ | 2.09 грн |
| SSF2300 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 5469 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.04 грн |
| 75+ | 4.07 грн |
| 86+ | 3.53 грн |
| 103+ | 2.76 грн |
| 250+ | 2.51 грн |
| 500+ | 2.35 грн |
| 1000+ | 2.19 грн |
| SSF2302 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.99 грн |
| 6000+ | 1.85 грн |
| SSF2302 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 1744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.04 грн |
| 86+ | 3.54 грн |
| 99+ | 3.07 грн |
| 117+ | 2.42 грн |
| 250+ | 2.19 грн |
| 500+ | 2.05 грн |
| 1000+ | 1.91 грн |
| SSF2307 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
на замовлення 2366 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.08 грн |
| 32+ | 9.42 грн |
| 100+ | 6.31 грн |
| 500+ | 4.53 грн |
| 1000+ | 4.06 грн |
| SSF2307 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.31 грн |
| 6000+ | 3.73 грн |
| SSF2311S |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.74 грн |
| SSF2311S |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.38 грн |
| 15+ | 21.32 грн |
| 25+ | 17.87 грн |
| 100+ | 10.63 грн |
| 250+ | 8.20 грн |
| 500+ | 6.99 грн |
| 1000+ | 4.68 грн |
| SSF2314 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.30 грн |
| 6000+ | 4.60 грн |
| SSF2314 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| SSF2318E |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
на замовлення 2512 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.82 грн |
| 17+ | 18.23 грн |
| 25+ | 15.91 грн |
| 100+ | 9.65 грн |
| 250+ | 7.99 грн |
| 500+ | 6.39 грн |
| 1000+ | 4.82 грн |
| SSF2318E |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.72 грн |
| SSF2319CJ1 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 312mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 312mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| SSF2319CJ1 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 312mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 312mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 4850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.65 грн |
| 33+ | 9.27 грн |
| 40+ | 7.62 грн |
| 100+ | 5.38 грн |
| 250+ | 4.49 грн |
| 500+ | 3.94 грн |
| 1000+ | 3.42 грн |
| SSF2319GE |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 275mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 275mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 7970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.34 грн |
| 23+ | 13.56 грн |
| 100+ | 6.61 грн |
| 500+ | 5.18 грн |
| 1000+ | 3.60 грн |
| 2000+ | 3.12 грн |
| SSF2319GE |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 275mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 275mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 3.20 грн |
| SSF2320Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 312mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 312mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.22 грн |
| 6000+ | 2.70 грн |
| 15000+ | 2.29 грн |
| SSF2320Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 312mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 312mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 17.99 грн |
| 21+ | 14.46 грн |
| 25+ | 12.14 грн |
| 100+ | 7.21 грн |
| 250+ | 5.57 грн |
| 500+ | 4.74 грн |
| 1000+ | 3.17 грн |
| SSF2341E |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.57 грн |
| SSF2341E |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
на замовлення 2580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.82 грн |
| 20+ | 15.59 грн |
| 25+ | 12.87 грн |
| 100+ | 9.16 грн |
| 250+ | 7.71 грн |
| 500+ | 6.81 грн |
| 1000+ | 5.97 грн |
| SSF2429 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.43 грн |
| 6000+ | 5.85 грн |
| SSF2429 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
на замовлення 5475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.95 грн |
| 15+ | 21.02 грн |
| 25+ | 18.92 грн |
| 100+ | 12.28 грн |
| 250+ | 10.34 грн |
| 500+ | 8.40 грн |
| 1000+ | 6.35 грн |
| SSF3051G7 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.97 грн |
| 6000+ | 3.70 грн |
| 9000+ | 3.63 грн |
| SSF3051G7 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
на замовлення 1677 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.17 грн |
| 45+ | 6.70 грн |
| 52+ | 5.88 грн |
| 100+ | 4.68 грн |
| 250+ | 4.28 грн |
| 500+ | 4.04 грн |
| 1000+ | 3.77 грн |
| SSF3324 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.80A, 30V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V
Description: MOSFET, N-CH, SINGLE, 5.80A, 30V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.57 грн |
| SSF3324 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.80A, 30V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V
Description: MOSFET, N-CH, SINGLE, 5.80A, 30V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V
на замовлення 2874 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.21 грн |
| 30+ | 10.32 грн |
| 100+ | 6.40 грн |
| 500+ | 4.40 грн |
| 1000+ | 3.89 грн |
| SSF3341 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.56 грн |
| SSF3341 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
на замовлення 2748 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.25 грн |
| 22+ | 13.79 грн |
| 27+ | 11.24 грн |
| 100+ | 7.84 грн |
| 250+ | 6.50 грн |
| 500+ | 5.68 грн |
| 1000+ | 4.91 грн |
| SSF3365 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -3A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| SSF3365 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3A, -30V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -3A, -30V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
на замовлення 5278 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.34 грн |
| 26+ | 11.98 грн |
| 31+ | 9.85 грн |
| 100+ | 6.97 грн |
| 250+ | 5.84 грн |
| 500+ | 5.14 грн |
| 1000+ | 4.48 грн |
| SSF3402 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5A, 30V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 5A, 30V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SSF3402 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5A, 30V, S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 5A, 30V, S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.82 грн |
| 60+ | 5.05 грн |
| 69+ | 4.43 грн |
| 100+ | 3.49 грн |
| 250+ | 3.18 грн |
| 500+ | 3.00 грн |
| 1000+ | 2.80 грн |
| SSF3611E |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| SSF3611E |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V
на замовлення 3540 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.12 грн |
| 22+ | 14.24 грн |
| 25+ | 12.63 грн |
| 100+ | 10.19 грн |
| 250+ | 9.41 грн |
| 500+ | 8.93 грн |
| 1000+ | 8.40 грн |
| SSF3714 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 30V 4A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET N/P-CH 30V 4A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SSF3714 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 30V 4A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET N/P-CH 30V 4A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
на замовлення 4870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.73 грн |
| 18+ | 17.10 грн |
| 25+ | 13.98 грн |
| 100+ | 9.81 грн |
| 250+ | 8.20 грн |
| 500+ | 7.19 грн |
| 1000+ | 6.25 грн |
| SSF3913S |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.53 грн |
| 6000+ | 3.93 грн |
| 9000+ | 3.71 грн |














