Продукція > GOOD-ARK SEMICONDUCTOR > Всі товари виробника GOOD-ARK SEMICONDUCTOR (1541) > Сторінка 26 з 26
Фото | Назва | Виробник | Інформація |
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SSFN2603 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V |
на замовлення 2960 шт: термін постачання 21-31 дні (днів) |
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SSFN3010H | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFN3010H | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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SSFN3907 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFN3907 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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SSFN6907 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V Power Dissipation (Max): 33.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSFN6907 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V Power Dissipation (Max): 33.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V |
на замовлення 5570 шт: термін постачання 21-31 дні (днів) |
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SSFP4806 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFP4806 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active |
на замовлення 1495 шт: термін постачання 21-31 дні (днів) |
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SSFP4959 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (4.9x5.8) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFP4959 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (4.9x5.8) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 25 V |
на замовлення 2075 шт: термін постачання 21-31 дні (днів) |
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SSFP4960 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFP4960 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSFP6904 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSFP6904 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V |
на замовлення 4653 шт: термін постачання 21-31 дні (днів) |
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SSFQ3712 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSFQ3712 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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SSFQ3805 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 8.9W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSFQ3805 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 8.9W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 5791 шт: термін постачання 21-31 дні (днів) |
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SSFQ3812 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFQ3812 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFQ3903 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 4.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFQ3903 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 4.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V |
на замовлення 2962 шт: термін постачання 21-31 дні (днів) |
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SSFQ3905 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V Power Dissipation (Max): 2.5W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFQ3905 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V Power Dissipation (Max): 2.5W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFQ3907 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFQ3907 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 15 V |
на замовлення 2897 шт: термін постачання 21-31 дні (днів) |
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SSFQ4810 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFQ4810 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
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SSFQ6810 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFQ6810 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 5974 шт: термін постачання 21-31 дні (днів) |
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SSFQ6907 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V Power Dissipation (Max): 4W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSFQ6907 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V Power Dissipation (Max): 4W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V |
на замовлення 5315 шт: термін постачання 21-31 дні (днів) |
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SSFT04N15 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SSFT04N15 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
на замовлення 1864 шт: термін постачання 21-31 дні (днів) |
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SSFU6511 | Good-Ark Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V Power Dissipation (Max): 32.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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W02G | Good-Ark Semiconductor |
![]() Packaging: Box Package / Case: 4-Circular, WOB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOB Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1207 шт: термін постачання 21-31 дні (днів) |
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W04G | Good-Ark Semiconductor |
![]() Packaging: Box Package / Case: 4-Circular, WOB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOB Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
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W10G | Good-Ark Semiconductor |
![]() Packaging: Box Package / Case: 4-Circular, WOB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOB Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 586 шт: термін постачання 21-31 дні (днів) |
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ZMM5252B | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: SOD-80 MiniMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 18 V |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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ZMM5252B | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: SOD-80 MiniMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 18 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SSFN2603 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -60A, -20V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -60A, -20V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.01 грн |
10+ | 34.75 грн |
25+ | 32.60 грн |
100+ | 24.98 грн |
250+ | 23.20 грн |
500+ | 19.75 грн |
1000+ | 15.54 грн |
SSFN3010H |
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Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 30V 10.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 30V 10.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.74 грн |
6000+ | 12.25 грн |
SSFN3010H |
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Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 30V 10.8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 30V 10.8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 48.39 грн |
11+ | 31.12 грн |
100+ | 21.19 грн |
500+ | 15.64 грн |
1000+ | 14.23 грн |
SSFN3907 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -30A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -30A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 16.19 грн |
SSFN3907 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -30A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -30A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 69.72 грн |
10+ | 41.62 грн |
25+ | 34.82 грн |
100+ | 25.42 грн |
250+ | 21.86 грн |
500+ | 19.68 грн |
1000+ | 17.56 грн |
SSFN6907 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -12A, -60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -12A, -60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
SSFN6907 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -12A, -60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -12A, -60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
на замовлення 5570 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.52 грн |
10+ | 35.46 грн |
25+ | 29.26 грн |
100+ | 20.87 грн |
250+ | 17.64 грн |
500+ | 15.65 грн |
1000+ | 13.75 грн |
SSFP4806 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 40V 30A 8PPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Description: MOSFET 2N-CH 40V 30A 8PPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 22.14 грн |
SSFP4806 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 40V 30A 8PPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Description: MOSFET 2N-CH 40V 30A 8PPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 89.40 грн |
10+ | 54.26 грн |
25+ | 45.65 грн |
100+ | 33.74 грн |
250+ | 29.28 грн |
500+ | 26.55 грн |
1000+ | 23.88 грн |
SSFP4959 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -85.00A, -
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 25 V
Description: MOSFET, P-CH, SINGLE, -85.00A, -
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 23.09 грн |
SSFP4959 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -85.00A, -
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 25 V
Description: MOSFET, P-CH, SINGLE, -85.00A, -
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (4.9x5.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 25 V
на замовлення 2075 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 71.36 грн |
10+ | 46.13 грн |
100+ | 31.81 грн |
500+ | 23.77 грн |
1000+ | 21.77 грн |
SSFP4960 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 100.00A, 4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 100.00A, 4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6000+ | 24.11 грн |
SSFP4960 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 100.00A, 4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 100.00A, 4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
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од. на суму грн.
SSFP6904 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 50A, 60V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 50A, 60V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
товару немає в наявності
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од. на суму грн.
SSFP6904 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 50A, 60V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 50A, 60V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
на замовлення 4653 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 48.39 грн |
10+ | 41.31 грн |
25+ | 38.83 грн |
100+ | 29.72 грн |
250+ | 27.61 грн |
500+ | 23.50 грн |
1000+ | 18.49 грн |
SSFQ3712 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N+P, DUAL, 30V, SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET, N+P, DUAL, 30V, SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
товару немає в наявності
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од. на суму грн.
SSFQ3712 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N+P, DUAL, 30V, SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET, N+P, DUAL, 30V, SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.63 грн |
12+ | 27.72 грн |
25+ | 25.87 грн |
100+ | 19.43 грн |
250+ | 18.04 грн |
500+ | 15.26 грн |
1000+ | 11.60 грн |
SSFQ3805 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 30V 18.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 8.9W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 30V 18.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 8.9W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
SSFQ3805 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 30V 18.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 8.9W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 30V 18.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 8.9W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 5791 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 91.86 грн |
10+ | 53.79 грн |
25+ | 44.77 грн |
100+ | 32.43 грн |
250+ | 27.72 грн |
500+ | 24.82 грн |
1000+ | 22.02 грн |
SSFQ3812 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, DUAL, 7.5A, 30V, S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET, N-CH, DUAL, 7.5A, 30V, S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 11.79 грн |
6000+ | 10.62 грн |
SSFQ3812 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, DUAL, 7.5A, 30V, S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET, N-CH, DUAL, 7.5A, 30V, S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.63 грн |
12+ | 27.49 грн |
25+ | 25.62 грн |
100+ | 19.24 грн |
250+ | 17.87 грн |
500+ | 15.12 грн |
1000+ | 11.49 грн |
SSFQ3903 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -13A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -13A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 15.95 грн |
SSFQ3903 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -13A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -13A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V
на замовлення 2962 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 64.80 грн |
10+ | 38.94 грн |
25+ | 32.57 грн |
100+ | 23.77 грн |
250+ | 20.45 грн |
500+ | 18.40 грн |
1000+ | 16.42 грн |
SSFQ3905 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -10A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -10A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 18.38 грн |
6000+ | 16.47 грн |
SSFQ3905 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -10A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -10A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.57 грн |
10+ | 40.28 грн |
25+ | 37.82 грн |
100+ | 28.97 грн |
250+ | 26.91 грн |
500+ | 22.90 грн |
1000+ | 18.02 грн |
SSFQ3907 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -8A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -8A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 14.20 грн |
SSFQ3907 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -8A, -30V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -8A, -30V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 15 V
на замовлення 2897 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 64.80 грн |
10+ | 37.91 грн |
25+ | 31.31 грн |
100+ | 22.38 грн |
250+ | 18.95 грн |
500+ | 16.84 грн |
1000+ | 14.82 грн |
SSFQ4810 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 40V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 40V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 14.18 грн |
6000+ | 12.47 грн |
SSFQ4810 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 40V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 40V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 64.80 грн |
10+ | 37.67 грн |
25+ | 31.15 грн |
100+ | 22.30 грн |
250+ | 18.89 грн |
500+ | 16.79 грн |
1000+ | 14.79 грн |
SSFQ6810 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.04 грн |
SSFQ6810 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 5974 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 36.91 грн |
11+ | 30.41 грн |
25+ | 28.37 грн |
100+ | 21.30 грн |
250+ | 19.77 грн |
500+ | 16.73 грн |
1000+ | 12.71 грн |
SSFQ6907 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5A,-60V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -5A,-60V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
SSFQ6907 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5A,-60V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -5A,-60V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
на замовлення 5315 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 57.41 грн |
10+ | 32.86 грн |
25+ | 27.14 грн |
100+ | 19.32 грн |
250+ | 16.30 грн |
500+ | 14.44 грн |
1000+ | 12.67 грн |
SSFT04N15 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 13.22 грн |
SSFT04N15 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 4A, 150V,
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 1864 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 37.73 грн |
11+ | 30.80 грн |
25+ | 28.75 грн |
100+ | 21.59 грн |
250+ | 20.05 грн |
500+ | 16.96 грн |
1000+ | 12.89 грн |
SSFU6511 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 11.5A, 650
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Power Dissipation (Max): 32.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Description: MOSFET, N-CH, SINGLE, 11.5A, 650
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Power Dissipation (Max): 32.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 140.25 грн |
10+ | 121.00 грн |
25+ | 114.87 грн |
100+ | 88.55 грн |
250+ | 82.77 грн |
500+ | 73.15 грн |
1000+ | 56.80 грн |
W02G |
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Виробник: Good-Ark Semiconductor
Description: BRIDGE RECTIFIER, GENERAL PURPOS
Packaging: Box
Package / Case: 4-Circular, WOB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECTIFIER, GENERAL PURPOS
Packaging: Box
Package / Case: 4-Circular, WOB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1207 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 36.09 грн |
12+ | 26.78 грн |
100+ | 16.07 грн |
500+ | 13.96 грн |
1000+ | 9.49 грн |
W04G |
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Виробник: Good-Ark Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1.5A WOB
Packaging: Box
Package / Case: 4-Circular, WOB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1.5A WOB
Packaging: Box
Package / Case: 4-Circular, WOB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.57 грн |
12+ | 28.35 грн |
100+ | 18.14 грн |
500+ | 12.86 грн |
1000+ | 11.52 грн |
2000+ | 10.39 грн |
W10G |
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Виробник: Good-Ark Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1.5A WOB
Packaging: Box
Package / Case: 4-Circular, WOB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1.5A WOB
Packaging: Box
Package / Case: 4-Circular, WOB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 586 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 35.27 грн |
14+ | 22.98 грн |
100+ | 15.54 грн |
500+ | 11.36 грн |
ZMM5252B |
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Виробник: Good-Ark Semiconductor
Description: DIODE, ZENER, 0.50W, 24.0V, 5%,
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Description: DIODE, ZENER, 0.50W, 24.0V, 5%,
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.94 грн |
33+ | 9.71 грн |
100+ | 5.24 грн |
500+ | 3.87 грн |
1000+ | 2.69 грн |
ZMM5252B |
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Виробник: Good-Ark Semiconductor
Description: DIODE, ZENER, 0.50W, 24.0V, 5%,
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Description: DIODE, ZENER, 0.50W, 24.0V, 5%,
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 2.46 грн |