Продукція > GOOD-ARK SEMICONDUCTOR > Всі товари виробника GOOD-ARK SEMICONDUCTOR (1716) > Сторінка 28 з 29
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SSF6909 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -3.2A, -60Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF6909 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -3.2A, -60Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
на замовлення 953 шт: термін постачання 21-31 дні (днів) |
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SSF6910 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 6.80A, 60VPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V Power Dissipation (Max): 5.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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SSF6910 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 6.80A, 60VPackaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V Power Dissipation (Max): 5.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF6911S | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -2A, -60V,Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 30 V |
на замовлення 1443 шт: термін постачання 21-31 дні (днів) |
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SSF6911S | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -2A, -60V,Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 30 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SSF6912 | Good-Ark Semiconductor |
Description: MOSFET, N-CHANNEL, 60V, 5A, SOT-Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSF6912 | Good-Ark Semiconductor |
Description: MOSFET, N-CHANNEL, 60V, 5A, SOT-Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V |
на замовлення 2910 шт: термін постачання 21-31 дні (днів) |
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SSF7120 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 20V 0.8A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 312mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF7120 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 20V 0.8A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 312mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| SSF7320 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: SOT-723 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 450mW Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 15860 шт: термін постачання 21-31 дні (днів) |
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| SSF7320 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: SOT-723 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 450mW Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
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SSF7912 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 3.20A, 60VPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SSF7912 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 3.20A, 60VPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V |
на замовлення 251 шт: термін постачання 21-31 дні (днів) |
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SSF8309S | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -3.8A, -30Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SSF8309S | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -3.8A, -30Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V |
на замовлення 2656 шт: термін постачання 21-31 дні (днів) |
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| SSF8970 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 200A, 80V,Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Drain to Source Voltage (Vdss): 80 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SSFB12N05 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 12V 5A 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 6V, 520pF @ 6V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, 9.2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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SSFB12N05 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 12V 5A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 6V, 520pF @ 6V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, 9.2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active |
на замовлення 3770 шт: термін постачання 21-31 дні (днів) |
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SSFB2309L | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -8.5A, -20Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 4.5V Power Dissipation (Max): 3.3W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSFB2309L | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -8.5A, -20Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 4.5V Power Dissipation (Max): 3.3W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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SSFB2310L | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 9.9A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-DFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.01W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFB2310L | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 9.9A, 20V,Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V Power Dissipation (Max): 2.01W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SSFB3909 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -12A, -30VPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V Power Dissipation (Max): 7.1W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFB3909 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -12A, -30VPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V Power Dissipation (Max): 7.1W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFD0959 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -30.00A, -Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SSFD0959 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -30.00A, -Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SSFD20N08 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 8A, 200V,Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4.5A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SSFD20N08 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 8A, 200V,Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4.5A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
на замовлення 1183 шт: термін постачання 21-31 дні (днів) |
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SSFD20N24 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 24.00A, 20Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SSFD20N24 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 24.00A, 20Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V |
на замовлення 2242 шт: термін постачання 21-31 дні (днів) |
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SSFD3906 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 80A, 30V,Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SSFD3906 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 80A, 30V,Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V |
на замовлення 2242 шт: термін постачання 21-31 дні (днів) |
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SSFD6025B | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -60.00A, -Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 23A, 10V Power Dissipation (Max): 168W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
на замовлення 1055 шт: термін постачання 21-31 дні (днів) |
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SSFD6025B | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -60.00A, -Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 23A, 10V Power Dissipation (Max): 168W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| SSFD6035 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -26A, -60VPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V Power Dissipation (Max): 60W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| SSFD6035 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -26A, -60VPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V Power Dissipation (Max): 60W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 30 V |
на замовлення 4978 шт: термін постачання 21-31 дні (днів) |
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SSFD6909 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -10A, -60VPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SSFD6909 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -10A, -60VPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
на замовлення 4456 шт: термін постачання 21-31 дні (днів) |
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SSFH6538 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 38A, 650V,Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 19A, 10V Power Dissipation (Max): 322W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V |
на замовлення 593 шт: термін постачання 21-31 дні (днів) |
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SSFK2219 | Good-Ark Semiconductor |
Description: MOSFET 2P-CH 20V 0.54A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 278mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFK2219 | Good-Ark Semiconductor |
Description: MOSFET 2P-CH 20V 0.54A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 278mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 5998 шт: термін постачання 21-31 дні (днів) |
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SSFK3220B | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 20V 0.8A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 275mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFK3220B | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 20V 0.8A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 275mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 2645 шт: термін постачання 21-31 дні (днів) |
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SSFK3220C | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 20V 0.8A SOT363Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 275mW (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate, 1.5V Drive Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 30V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFK3220C | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 20V 0.8A SOT363Power - Max: 275mW (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate, 1.5V Drive Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drain to Source Voltage (Vdss): 20V |
на замовлення 1362 шт: термін постачання 21-31 дні (днів) |
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SSFK9120 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 20V 0.8A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 275mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 5950 шт: термін постачання 21-31 дні (днів) |
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SSFK9120 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 20V 0.8A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 275mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFL6912 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 5A, 60V, SPackaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V Power Dissipation (Max): 1.79W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFL6912 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 5A, 60V, SPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V Power Dissipation (Max): 1.79W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V |
на замовлення 5940 шт: термін постачання 21-31 дні (днів) |
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SSFN2603 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -60A, -20VPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFN2603 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -60A, -20VInput Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 2960 шт: термін постачання 21-31 дні (днів) |
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SSFN3010H | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 30V 10.8A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSFN3010H | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 30V 10.8A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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SSFN3907 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -30A, -30VPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSFN3907 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -30A, -30VPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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SSFN6907 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -12A, -60VPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V Power Dissipation (Max): 33.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V |
на замовлення 5570 шт: термін постачання 21-31 дні (днів) |
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SSFN6907 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -12A, -60VPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V Power Dissipation (Max): 33.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SSFP3806 | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 30V 40A 8PPAKSupplier Device Package: 8-PPAK (5x5.8) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 46W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 2921 шт: термін постачання 21-31 дні (днів) |
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SSFP3806 | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 30V 40A 8PPAKDrain to Source Voltage (Vdss): 30V Power - Max: 46W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Supplier Device Package: 8-PPAK (5x5.8) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| SSF6909 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.2A, -60
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -3.2A, -60
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.40 грн |
| SSF6909 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.2A, -60
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -3.2A, -60
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
на замовлення 953 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.31 грн |
| 29+ | 10.47 грн |
| 33+ | 9.24 грн |
| 100+ | 7.40 грн |
| 250+ | 6.81 грн |
| 500+ | 6.45 грн |
| SSF6910 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 6.80A, 60V
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V
Power Dissipation (Max): 5.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 6.80A, 60V
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V
Power Dissipation (Max): 5.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.09 грн |
| 27+ | 11.44 грн |
| 30+ | 10.14 грн |
| 100+ | 8.14 грн |
| SSF6910 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 6.80A, 60V
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V
Power Dissipation (Max): 5.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 6.80A, 60V
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V
Power Dissipation (Max): 5.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 7.06 грн |
| 6000+ | 6.60 грн |
| SSF6911S |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -2A, -60V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -2A, -60V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 30 V
на замовлення 1443 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.32 грн |
| 50+ | 6.06 грн |
| 57+ | 5.26 грн |
| 100+ | 4.18 грн |
| 250+ | 3.81 грн |
| 500+ | 3.59 грн |
| 1000+ | 3.35 грн |
| SSF6911S |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -2A, -60V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -2A, -60V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.53 грн |
| 6000+ | 3.28 грн |
| 9000+ | 3.22 грн |
| 15000+ | 2.96 грн |
| SSF6912 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CHANNEL, 60V, 5A, SOT-
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V
Description: MOSFET, N-CHANNEL, 60V, 5A, SOT-
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.16 грн |
| 6000+ | 4.81 грн |
| 9000+ | 4.73 грн |
| SSF6912 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CHANNEL, 60V, 5A, SOT-
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V
Description: MOSFET, N-CHANNEL, 60V, 5A, SOT-
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V
на замовлення 2910 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 13.20 грн |
| 36+ | 8.53 грн |
| 40+ | 7.54 грн |
| 100+ | 6.01 грн |
| 250+ | 5.52 грн |
| 500+ | 5.22 грн |
| 1000+ | 4.89 грн |
| SSF7120 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.96 грн |
| 15+ | 20.04 грн |
| 25+ | 17.56 грн |
| 100+ | 10.66 грн |
| 250+ | 8.82 грн |
| 500+ | 7.06 грн |
| 1000+ | 5.32 грн |
| SSF7120 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.21 грн |
| 6000+ | 4.51 грн |
| SSF7320 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 450mW
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 450mW
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 15860 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.08 грн |
| 16+ | 19.22 грн |
| 25+ | 16.12 грн |
| 100+ | 9.58 грн |
| 250+ | 7.40 грн |
| 500+ | 6.30 грн |
| 1000+ | 4.22 грн |
| 2500+ | 3.80 грн |
| SSF7320 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 450mW
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 450mW
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| SSF7912 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 3.20A, 60V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V
Description: MOSFET, N-CH, SINGLE, 3.20A, 60V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.53 грн |
| 6000+ | 3.28 грн |
| 9000+ | 3.22 грн |
| 15000+ | 2.96 грн |
| SSF7912 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 3.20A, 60V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V
Description: MOSFET, N-CH, SINGLE, 3.20A, 60V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V
на замовлення 251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.32 грн |
| 50+ | 6.06 грн |
| 57+ | 5.26 грн |
| 100+ | 4.18 грн |
| 250+ | 3.81 грн |
| SSF8309S |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.8A, -30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -3.8A, -30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.23 грн |
| 6000+ | 4.53 грн |
| SSF8309S |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.8A, -30
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -3.8A, -30
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
на замовлення 2656 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.63 грн |
| 20+ | 15.11 грн |
| 25+ | 12.50 грн |
| 100+ | 8.89 грн |
| 250+ | 7.48 грн |
| 500+ | 6.61 грн |
| 1000+ | 5.78 грн |
| SSF8970 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 200A, 80V,
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Description: MOSFET, N-CH, SINGLE, 200A, 80V,
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
товару немає в наявності
В кошику
од. на суму грн.
| SSFB12N05 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 12V 5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 6V, 520pF @ 6V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, 9.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Description: MOSFET N/P-CH 12V 5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 6V, 520pF @ 6V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, 9.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 7.61 грн |
| SSFB12N05 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 12V 5A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 6V, 520pF @ 6V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, 9.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Description: MOSFET N/P-CH 12V 5A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 6V, 520pF @ 6V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, 9.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
на замовлення 3770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 35.73 грн |
| 15+ | 21.09 грн |
| 25+ | 17.50 грн |
| 100+ | 12.53 грн |
| 250+ | 10.62 грн |
| 500+ | 9.44 грн |
| 1000+ | 8.32 грн |
| SSFB2309L |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -8.5A, -20
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -8.5A, -20
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 11.01 грн |
| 6000+ | 9.77 грн |
| 9000+ | 9.34 грн |
| SSFB2309L |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -8.5A, -20
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -8.5A, -20
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.60 грн |
| 11+ | 27.90 грн |
| 25+ | 23.18 грн |
| 100+ | 16.77 грн |
| 250+ | 14.31 грн |
| 500+ | 12.80 грн |
| 1000+ | 11.35 грн |
| SSFB2310L |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 9.9A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.01W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET, N-CH, SINGLE, 9.9A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.01W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.08 грн |
| 6000+ | 8.87 грн |
| SSFB2310L |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 9.9A, 20V,
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.01W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 9.9A, 20V,
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.01W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| SSFB3909 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.07 грн |
| 13+ | 24.31 грн |
| 25+ | 22.26 грн |
| 100+ | 15.55 грн |
| 250+ | 14.09 грн |
| 500+ | 11.66 грн |
| 1000+ | 8.60 грн |
| SSFB3909 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 8.87 грн |
| 6000+ | 8.03 грн |
| SSFD0959 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -30.00A, -
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET, P-CH, SINGLE, -30.00A, -
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SSFD0959 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -30.00A, -
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET, P-CH, SINGLE, -30.00A, -
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 27.23 грн |
| 5000+ | 24.33 грн |
| SSFD20N08 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 8A, 200V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 8A, 200V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SSFD20N08 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 8A, 200V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 8A, 200V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 1183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.29 грн |
| 15+ | 20.49 грн |
| 25+ | 18.31 грн |
| 100+ | 14.90 грн |
| 250+ | 13.82 грн |
| 500+ | 13.16 грн |
| 1000+ | 12.42 грн |
| SSFD20N24 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 24.00A, 20
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Description: MOSFET, N-CH, SINGLE, 24.00A, 20
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 43.31 грн |
| 5000+ | 40.74 грн |
| SSFD20N24 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 24.00A, 20
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Description: MOSFET, N-CH, SINGLE, 24.00A, 20
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
на замовлення 2242 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.54 грн |
| 10+ | 61.92 грн |
| 25+ | 56.15 грн |
| 100+ | 46.67 грн |
| 250+ | 43.80 грн |
| 500+ | 42.07 грн |
| 1000+ | 39.97 грн |
| SSFD3906 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SSFD3906 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 2242 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 28.74 грн |
| 13+ | 23.86 грн |
| 25+ | 22.26 грн |
| 100+ | 16.73 грн |
| 250+ | 15.53 грн |
| 500+ | 13.14 грн |
| 1000+ | 9.99 грн |
| SSFD6025B |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -60.00A, -
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 23A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Description: MOSFET, P-CH, SINGLE, -60.00A, -
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 23A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
на замовлення 1055 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 71.45 грн |
| 10+ | 42.85 грн |
| 100+ | 28.08 грн |
| 500+ | 20.38 грн |
| 1000+ | 18.46 грн |
| SSFD6025B |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -60.00A, -
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 23A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Description: MOSFET, P-CH, SINGLE, -60.00A, -
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 23A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 18.12 грн |
| SSFD6035 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -26A, -60V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -26A, -60V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 18.66 грн |
| SSFD6035 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -26A, -60V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -26A, -60V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 30 V
на замовлення 4978 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.15 грн |
| 10+ | 40.91 грн |
| 25+ | 38.44 грн |
| 100+ | 29.44 грн |
| 250+ | 27.34 грн |
| 500+ | 23.27 грн |
| 1000+ | 18.31 грн |
| SSFD6909 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -10A, -60V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -10A, -60V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SSFD6909 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -10A, -60V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -10A, -60V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
на замовлення 4456 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 55.92 грн |
| 10+ | 32.23 грн |
| 25+ | 26.59 грн |
| 100+ | 18.95 грн |
| 250+ | 16.00 грн |
| 500+ | 14.19 грн |
| 1000+ | 12.46 грн |
| SSFH6538 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 38A, 650V,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19A, 10V
Power Dissipation (Max): 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Description: MOSFET, N-CH, SINGLE, 38A, 650V,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19A, 10V
Power Dissipation (Max): 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
на замовлення 593 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 204.25 грн |
| 10+ | 176.72 грн |
| 25+ | 167.07 грн |
| 100+ | 135.90 грн |
| 250+ | 128.93 грн |
| 500+ | 115.69 грн |
| SSFK2219 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 0.54A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 278mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2P-CH 20V 0.54A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 278mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.07 грн |
| SSFK2219 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 0.54A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 278mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2P-CH 20V 0.54A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 278mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 5998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.62 грн |
| 13+ | 23.33 грн |
| 25+ | 20.43 грн |
| 100+ | 12.42 грн |
| 250+ | 10.28 грн |
| 500+ | 8.23 грн |
| 1000+ | 6.20 грн |
| SSFK3220B |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 275mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 275mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.97 грн |
| 6000+ | 2.76 грн |
| SSFK3220B |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 275mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 275mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 2645 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 40+ | 7.77 грн |
| 59+ | 5.09 грн |
| 68+ | 4.46 грн |
| 100+ | 3.54 грн |
| 250+ | 3.22 грн |
| 500+ | 3.03 грн |
| 1000+ | 2.83 грн |
| SSFK3220C |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 275mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 30V
Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 275mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 30V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.12 грн |
| SSFK3220C |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 20V 0.8A SOT363
Power - Max: 275mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
Description: MOSFET 2N-CH 20V 0.8A SOT363
Power - Max: 275mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
на замовлення 1362 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.19 грн |
| 26+ | 11.67 грн |
| 100+ | 7.28 грн |
| 500+ | 5.04 грн |
| 1000+ | 4.46 грн |
| SSFK9120 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 0.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 275mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET N/P-CH 20V 0.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 275mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.17 грн |
| 13+ | 24.01 грн |
| 25+ | 21.00 грн |
| 100+ | 12.77 грн |
| 250+ | 10.57 грн |
| 500+ | 8.45 грн |
| 1000+ | 6.38 грн |
| SSFK9120 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 275mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET N/P-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 275mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.24 грн |
| SSFL6912 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5A, 60V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Description: MOSFET, N-CH, SINGLE, 5A, 60V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 8.58 грн |
| SSFL6912 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5A, 60V, S
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Description: MOSFET, N-CH, SINGLE, 5A, 60V, S
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
на замовлення 5940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.29 грн |
| 13+ | 23.56 грн |
| 25+ | 21.54 грн |
| 100+ | 15.03 грн |
| 250+ | 13.63 грн |
| 500+ | 11.28 грн |
| 1000+ | 8.32 грн |
| SSFN2603 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -60A, -20V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -60A, -20V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 14.47 грн |
| SSFN2603 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -60A, -20V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET, P-CH, SINGLE, -60A, -20V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.62 грн |
| 14+ | 22.36 грн |
| 25+ | 19.95 грн |
| 100+ | 16.26 грн |
| 250+ | 15.09 грн |
| 500+ | 14.38 грн |
| 1000+ | 13.57 грн |
| SSFN3010H |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 30V 10.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 30V 10.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 13.73 грн |
| 6000+ | 12.14 грн |
| SSFN3010H |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 30V 10.8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 30V 10.8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.25 грн |
| 10+ | 34.63 грн |
| 100+ | 22.35 грн |
| 500+ | 16.03 грн |
| 1000+ | 14.44 грн |
| SSFN3907 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -30A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -30A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 15.33 грн |
| SSFN3907 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -30A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -30A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 66.01 грн |
| 10+ | 39.41 грн |
| 25+ | 32.97 грн |
| 100+ | 24.07 грн |
| 250+ | 20.70 грн |
| 500+ | 18.63 грн |
| 1000+ | 16.63 грн |
| SSFN6907 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -12A, -60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -12A, -60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
на замовлення 5570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.25 грн |
| 10+ | 33.58 грн |
| 25+ | 27.70 грн |
| 100+ | 19.76 грн |
| 250+ | 16.70 грн |
| 500+ | 14.82 грн |
| 1000+ | 13.02 грн |
| SSFN6907 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -12A, -60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -12A, -60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 8A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSFP3806 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 30V 40A 8PPAK
Supplier Device Package: 8-PPAK (5x5.8)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 46W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 40A 8PPAK
Supplier Device Package: 8-PPAK (5x5.8)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 46W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 2921 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.27 грн |
| 10+ | 30.29 грн |
| 25+ | 27.19 грн |
| 100+ | 22.30 грн |
| 250+ | 20.76 грн |
| 500+ | 19.83 грн |
| 1000+ | 18.76 грн |
| SSFP3806 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 30V 40A 8PPAK
Drain to Source Voltage (Vdss): 30V
Power - Max: 46W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-PPAK (5x5.8)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Description: MOSFET 2N-CH 30V 40A 8PPAK
Drain to Source Voltage (Vdss): 30V
Power - Max: 46W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-PPAK (5x5.8)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 20.06 грн |



















