Продукція > GOOD-ARK SEMICONDUCTOR > Всі товари виробника GOOD-ARK SEMICONDUCTOR (1794) > Сторінка 28 з 30
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SMBJ75A | Good-Ark Semiconductor |
Description: TVS DIODE 75VWM 121VC DO214AA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMBJ75A | Good-Ark Semiconductor |
Description: TVS DIODE 75VWM 121VC DO214AA |
на замовлення 2789 шт: термін постачання 21-31 дні (днів) |
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SMBRP2050 | Good-Ark Semiconductor |
Description: DIODE SCHOTTKY 50V 20MA 8POWQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 20mA Supplier Device Package: 8-PowerQFN (4.9x5.8) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 mA Current - Reverse Leakage @ Vr: 500 nA @ 50 V |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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SMBRP2050 | Good-Ark Semiconductor |
Description: DIODE SCHOTTKY 50V 20MA 8POWQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 20mA Supplier Device Package: 8-PowerQFN (4.9x5.8) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 mA Current - Reverse Leakage @ Vr: 500 nA @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMCJ200CA | Good-Ark Semiconductor |
Description: TVS DIODE 200VWM 324VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.6A Voltage - Reverse Standoff (Typ): 200V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 224V Voltage - Clamping (Max) @ Ipp: 324V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SMCJ200CA | Good-Ark Semiconductor |
Description: TVS DIODE 200VWM 324VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.6A Voltage - Reverse Standoff (Typ): 200V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 224V Voltage - Clamping (Max) @ Ipp: 324V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 1619 шт: термін постачання 21-31 дні (днів) |
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SMF22A | Good-Ark Semiconductor |
Description: TVS DIODE 22VWM 35.5VC SOD123FLPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.63A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 200W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SMF22A | Good-Ark Semiconductor |
Description: TVS DIODE 22VWM 35.5VC SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.63A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 1944 шт: термін постачання 21-31 дні (днів) |
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SMF5.0A | Good-Ark Semiconductor |
Description: TVS, UNI-DIR, 200W, 5V, ESGA (SO |
на замовлення 2062 шт: термін постачання 21-31 дні (днів) |
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SMF5.0A | Good-Ark Semiconductor |
Description: TVS, UNI-DIR, 200W, 5V, ESGA (SO |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SMSZ4690 | Good-Ark Semiconductor |
Description: DIODE ZENER 5.6V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 4 V Qualification: AEC-Q101 |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
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SMSZ4690 | Good-Ark Semiconductor |
Description: DIODE ZENER 5.6V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 4 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SMSZ4699 | Good-Ark Semiconductor |
Description: DIODE ZENER 12V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMSZ4699 | Good-Ark Semiconductor |
Description: DIODE ZENER 12V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V Qualification: AEC-Q101 |
на замовлення 2847 шт: термін постачання 21-31 дні (днів) |
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SMURP1040 | Good-Ark Semiconductor |
Description: DIODE STANDARD 400V 10A 8POWQFNPart Status: Active Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 8-PowerQFN (4.9x5.8) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SMURP1040 | Good-Ark Semiconductor |
Description: DIODE STANDARD 400V 10A 8POWQFNPart Status: Active Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 8-PowerQFN (4.9x5.8) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN |
на замовлення 3385 шт: термін постачання 21-31 дні (днів) |
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SSF02N15 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 1.4A, 150VPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSF02N15 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 1.4A, 150VPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
на замовлення 5410 шт: термін постачання 21-31 дні (днів) |
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SSF0910S | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 2.0A, 100VPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF0910S | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 2.0A, 100VPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF2116 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 20V 3.8A SOT23-6LInput Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-23-6L Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF2116 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 20V 3.8A SOT23-6LPart Status: Active Supplier Device Package: SOT-23-6L Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc) |
на замовлення 1897 шт: термін постачання 21-31 дні (днів) |
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SSF2145CH6 | Good-Ark Semiconductor |
Description: MOSFET 20V 4.8A 6TSOPRds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc) Part Status: Active Supplier Device Package: 6-TSOP Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V Drain to Source Voltage (Vdss): 20V Power - Max: 1.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 1V @ 250µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSF2145CH6 | Good-Ark Semiconductor |
Description: MOSFET 20V 4.8A 6TSOPRds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc) Part Status: Active Supplier Device Package: 6-TSOP Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V Drain to Source Voltage (Vdss): 20V Power - Max: 1.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 1V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSF2215 | Good-Ark Semiconductor |
Description: MOSFET 2P-CH 20V 3A SOT23-6LPart Status: Active Supplier Device Package: SOT-23-6L Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSF2215 | Good-Ark Semiconductor |
Description: MOSFET 2P-CH 20V 3A SOT23-6LPart Status: Active Supplier Device Package: SOT-23-6L Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 2615 шт: термін постачання 21-31 дні (днів) |
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SSF2219Y | Good-Ark Semiconductor |
Description: MOSFET 2P-CH 20V 0.4A SOT563Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 312mW (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 2982 шт: термін постачання 21-31 дні (днів) |
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SSF2219Y | Good-Ark Semiconductor |
Description: MOSFET 2P-CH 20V 0.4A SOT563Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 312mW (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2220Y | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 20V 0.8A SOT563Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 312W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2220Y | Good-Ark Semiconductor |
Description: MOSFET 2N-CH 20V 0.8A SOT563Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 312W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 2840 шт: термін постачання 21-31 дні (днів) |
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SSF2300 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.3W Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 5469 шт: термін постачання 21-31 дні (днів) |
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SSF2300 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.3W Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSF2302 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4A, 20V, SPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF2302 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4A, 20V, SPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
на замовлення 1744 шт: термін постачання 21-31 дні (днів) |
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SSF2307 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -6.50A, -2Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2307 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -6.50A, -2Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V |
на замовлення 2203 шт: термін постачання 21-31 дні (днів) |
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SSF2311S | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4.7A, -20Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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SSF2311S | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4.7A, -20Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2314 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSF2314 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSF2318E | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.5A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2318E | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.5A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 2512 шт: термін постачання 21-31 дні (днів) |
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SSF2319CJ1 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.45A, -2Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 312mW Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 450mA (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSF2319CJ1 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.45A, -2Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 312mW Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 450mA (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) |
на замовлення 4850 шт: термін постачання 21-31 дні (днів) |
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SSF2319GE | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.40A, -2Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: SOT-723 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 275mW Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SSF2319GE | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.40A, -2Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: SOT-723 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 275mW Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 7970 шт: термін постачання 21-31 дні (днів) |
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SSF2320Y | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 312mW (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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SSF2320Y | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 312mW (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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SSF2341E | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4A, -20V,Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF2341E | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4A, -20V,Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
на замовлення 2580 шт: термін постачання 21-31 дні (днів) |
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SSF2429 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -5A, -20V,Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSF2429 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -5A, -20V,Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V |
на замовлення 4737 шт: термін постачання 21-31 дні (днів) |
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SSF3051G7 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4A, -30V,Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V Power Dissipation (Max): 1.7W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSF3051G7 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4A, -30V,Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V Power Dissipation (Max): 1.7W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
на замовлення 1362 шт: термін постачання 21-31 дні (днів) |
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SSF3324 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 5.80A, 30VInput Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.15W (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF3324 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 5.80A, 30VInput Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.15W (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 2874 шт: термін постачання 21-31 дні (днів) |
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SSF3341 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4.2A, -30Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSF3341 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4.2A, -30Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V |
на замовлення 2748 шт: термін постачання 21-31 дні (днів) |
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SSF3365 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -3A, -30V,Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSF3365 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -3A, -30V,Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 5278 шт: термін постачання 21-31 дні (днів) |
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| SMBJ75A |
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Виробник: Good-Ark Semiconductor
Description: TVS DIODE 75VWM 121VC DO214AA
Description: TVS DIODE 75VWM 121VC DO214AA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.58 грн |
| SMBJ75A |
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Виробник: Good-Ark Semiconductor
Description: TVS DIODE 75VWM 121VC DO214AA
Description: TVS DIODE 75VWM 121VC DO214AA
на замовлення 2789 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.15 грн |
| 24+ | 13.03 грн |
| 50+ | 9.31 грн |
| 100+ | 7.61 грн |
| 500+ | 5.62 грн |
| SMBRP2050 |
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Виробник: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 50V 20MA 8POWQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 20mA
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 mA
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
Description: DIODE SCHOTTKY 50V 20MA 8POWQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 20mA
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 mA
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.37 грн |
| 10+ | 44.49 грн |
| 100+ | 29.16 грн |
| 500+ | 21.17 грн |
| SMBRP2050 |
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Виробник: Good-Ark Semiconductor
Description: DIODE SCHOTTKY 50V 20MA 8POWQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 20mA
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 mA
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
Description: DIODE SCHOTTKY 50V 20MA 8POWQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 20mA
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 mA
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.40 грн |
| SMCJ200CA |
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Виробник: Good-Ark Semiconductor
Description: TVS DIODE 200VWM 324VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 200VWM 324VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.83 грн |
| 6000+ | 8.63 грн |
| SMCJ200CA |
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Виробник: Good-Ark Semiconductor
Description: TVS DIODE 200VWM 324VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 200VWM 324VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 1619 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.51 грн |
| 12+ | 25.83 грн |
| 100+ | 16.48 грн |
| 500+ | 11.67 грн |
| 1000+ | 10.44 грн |
| SMF22A |
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Виробник: Good-Ark Semiconductor
Description: TVS DIODE 22VWM 35.5VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.63A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 22VWM 35.5VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.63A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMF22A |
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Виробник: Good-Ark Semiconductor
Description: TVS DIODE 22VWM 35.5VC SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.63A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 22VWM 35.5VC SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.63A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 1944 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.82 грн |
| 34+ | 9.07 грн |
| 50+ | 6.46 грн |
| 100+ | 5.26 грн |
| 500+ | 3.84 грн |
| SMF5.0A |
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Виробник: Good-Ark Semiconductor
Description: TVS, UNI-DIR, 200W, 5V, ESGA (SO
Description: TVS, UNI-DIR, 200W, 5V, ESGA (SO
на замовлення 2062 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.82 грн |
| 34+ | 9.07 грн |
| 50+ | 6.46 грн |
| 100+ | 5.26 грн |
| 500+ | 3.84 грн |
| SMF5.0A |
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Виробник: Good-Ark Semiconductor
Description: TVS, UNI-DIR, 200W, 5V, ESGA (SO
Description: TVS, UNI-DIR, 200W, 5V, ESGA (SO
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMSZ4690 |
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Виробник: Good-Ark Semiconductor
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Qualification: AEC-Q101
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.91 грн |
| 59+ | 5.18 грн |
| 100+ | 3.44 грн |
| 500+ | 2.45 грн |
| 1000+ | 2.18 грн |
| SMSZ4690 |
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Виробник: Good-Ark Semiconductor
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.33 грн |
| 6000+ | 2.00 грн |
| 9000+ | 1.87 грн |
| SMSZ4699 |
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Виробник: Good-Ark Semiconductor
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.26 грн |
| SMSZ4699 |
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Виробник: Good-Ark Semiconductor
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
на замовлення 2847 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.12 грн |
| 62+ | 4.95 грн |
| 100+ | 3.33 грн |
| 500+ | 2.37 грн |
| 1000+ | 2.11 грн |
| SMURP1040 |
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Виробник: Good-Ark Semiconductor
Description: DIODE STANDARD 400V 10A 8POWQFN
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Description: DIODE STANDARD 400V 10A 8POWQFN
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMURP1040 |
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Виробник: Good-Ark Semiconductor
Description: DIODE STANDARD 400V 10A 8POWQFN
Part Status: Active
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Description: DIODE STANDARD 400V 10A 8POWQFN
Part Status: Active
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
на замовлення 3385 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.58 грн |
| 10+ | 43.96 грн |
| 100+ | 28.64 грн |
| 500+ | 20.71 грн |
| 1000+ | 18.73 грн |
| SSF02N15 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSF02N15 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 5410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.31 грн |
| 12+ | 26.21 грн |
| 50+ | 19.06 грн |
| 100+ | 15.72 грн |
| 500+ | 11.87 грн |
| SSF0910S |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.06 грн |
| 15+ | 21.56 грн |
| 25+ | 19.41 грн |
| 100+ | 12.59 грн |
| 250+ | 10.60 грн |
| 500+ | 8.62 грн |
| 1000+ | 6.52 грн |
| SSF0910S |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.60 грн |
| 6000+ | 6.00 грн |
| SSF2116 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 3.8A SOT23-6L
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
Description: MOSFET N/P-CH 20V 3.8A SOT23-6L
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.96 грн |
| SSF2116 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 3.8A SOT23-6L
Part Status: Active
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
Description: MOSFET N/P-CH 20V 3.8A SOT23-6L
Part Status: Active
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
на замовлення 1897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.69 грн |
| 19+ | 16.46 грн |
| 50+ | 11.84 грн |
| 100+ | 9.71 грн |
| 500+ | 7.22 грн |
| SSF2145CH6 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 20V 4.8A 6TSOP
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Part Status: Active
Supplier Device Package: 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: MOSFET 20V 4.8A 6TSOP
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Part Status: Active
Supplier Device Package: 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSF2145CH6 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 20V 4.8A 6TSOP
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Part Status: Active
Supplier Device Package: 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: MOSFET 20V 4.8A 6TSOP
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Part Status: Active
Supplier Device Package: 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1V @ 250µA
товару немає в наявності
В кошику
од. на суму грн.
| SSF2215 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 3A SOT23-6L
Part Status: Active
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 3A SOT23-6L
Part Status: Active
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSF2215 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 3A SOT23-6L
Part Status: Active
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 3A SOT23-6L
Part Status: Active
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.86 грн |
| 17+ | 18.36 грн |
| 50+ | 13.27 грн |
| 100+ | 10.89 грн |
| 500+ | 8.13 грн |
| SSF2219Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 0.4A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 312mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 0.4A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 312mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 2982 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.90 грн |
| 17+ | 18.97 грн |
| 25+ | 16.58 грн |
| 100+ | 10.07 грн |
| 250+ | 8.33 грн |
| 500+ | 6.67 грн |
| 1000+ | 5.03 грн |
| SSF2219Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 0.4A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 312mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 0.4A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 312mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.92 грн |
| SSF2220Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 312W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 312W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.92 грн |
| SSF2220Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 312W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 312W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 2840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.90 грн |
| 17+ | 18.97 грн |
| 25+ | 16.58 грн |
| 100+ | 10.07 грн |
| 250+ | 8.33 грн |
| 500+ | 6.67 грн |
| 1000+ | 5.03 грн |
| SSF2300 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.3W
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.3W
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 5469 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.12 грн |
| 75+ | 4.11 грн |
| 86+ | 3.57 грн |
| 103+ | 2.80 грн |
| 250+ | 2.54 грн |
| 500+ | 2.38 грн |
| 1000+ | 2.22 грн |
| SSF2300 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.3W
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.3W
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.32 грн |
| 6000+ | 2.15 грн |
| 9000+ | 2.11 грн |
| SSF2302 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.01 грн |
| 6000+ | 1.87 грн |
| SSF2302 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 1744 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.12 грн |
| 86+ | 3.58 грн |
| 99+ | 3.11 грн |
| 117+ | 2.45 грн |
| 250+ | 2.21 грн |
| 500+ | 2.07 грн |
| 1000+ | 1.93 грн |
| SSF2307 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.33 грн |
| SSF2307 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
на замовлення 2203 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.36 грн |
| 25+ | 12.34 грн |
| 50+ | 8.81 грн |
| 100+ | 7.20 грн |
| 500+ | 5.31 грн |
| SSF2311S |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.69 грн |
| 15+ | 21.56 грн |
| 25+ | 18.07 грн |
| 100+ | 10.75 грн |
| 250+ | 8.30 грн |
| 500+ | 7.07 грн |
| 1000+ | 4.73 грн |
| SSF2311S |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.80 грн |
| SSF2314 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.36 грн |
| 6000+ | 4.65 грн |
| SSF2314 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| SSF2318E |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.77 грн |
| SSF2318E |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 2512 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.11 грн |
| 17+ | 18.44 грн |
| 25+ | 16.09 грн |
| 100+ | 9.76 грн |
| 250+ | 8.08 грн |
| 500+ | 6.46 грн |
| 1000+ | 4.87 грн |
| SSF2319CJ1 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSF2319CJ1 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
на замовлення 4850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.82 грн |
| 33+ | 9.37 грн |
| 40+ | 7.71 грн |
| 100+ | 5.44 грн |
| 250+ | 4.54 грн |
| 500+ | 3.98 грн |
| 1000+ | 3.46 грн |
| SSF2319GE |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 275mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 275mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 3.24 грн |
| SSF2319GE |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 275mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 275mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 7970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.57 грн |
| 23+ | 13.71 грн |
| 100+ | 6.69 грн |
| 500+ | 5.24 грн |
| 1000+ | 3.64 грн |
| 2000+ | 3.15 грн |
| SSF2320Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.26 грн |
| 6000+ | 2.73 грн |
| 15000+ | 2.32 грн |
| SSF2320Y |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.20 грн |
| 21+ | 14.63 грн |
| 25+ | 12.28 грн |
| 100+ | 7.29 грн |
| 250+ | 5.63 грн |
| 500+ | 4.80 грн |
| 1000+ | 3.21 грн |
| SSF2341E |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.63 грн |
| SSF2341E |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
на замовлення 2580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.11 грн |
| 20+ | 15.77 грн |
| 25+ | 13.01 грн |
| 100+ | 9.26 грн |
| 250+ | 7.80 грн |
| 500+ | 6.89 грн |
| 1000+ | 6.03 грн |
| SSF2429 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.75 грн |
| 9000+ | 5.57 грн |
| SSF2429 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
на замовлення 4737 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.86 грн |
| 17+ | 18.36 грн |
| 50+ | 13.27 грн |
| 100+ | 10.89 грн |
| 500+ | 8.13 грн |
| SSF3051G7 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSF3051G7 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
на замовлення 1362 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.11 грн |
| 20+ | 15.62 грн |
| 50+ | 11.21 грн |
| 100+ | 9.19 грн |
| 500+ | 6.82 грн |
| SSF3324 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.80A, 30V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.15W (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET, N-CH, SINGLE, 5.80A, 30V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.15W (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.61 грн |
| SSF3324 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.80A, 30V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.15W (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET, N-CH, SINGLE, 5.80A, 30V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.15W (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 2874 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.41 грн |
| 30+ | 10.44 грн |
| 100+ | 6.48 грн |
| 500+ | 4.45 грн |
| 1000+ | 3.93 грн |
| SSF3341 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.61 грн |
| SSF3341 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
на замовлення 2748 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.53 грн |
| 22+ | 13.94 грн |
| 27+ | 11.37 грн |
| 100+ | 7.93 грн |
| 250+ | 6.58 грн |
| 500+ | 5.75 грн |
| 1000+ | 4.97 грн |
| SSF3365 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3A, -30V,
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET, P-CH, SINGLE, -3A, -30V,
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSF3365 |
![]() |
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3A, -30V,
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET, P-CH, SINGLE, -3A, -30V,
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 5278 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.57 грн |
| 26+ | 12.11 грн |
| 31+ | 9.97 грн |
| 100+ | 7.05 грн |
| 250+ | 5.91 грн |
| 500+ | 5.20 грн |
| 1000+ | 4.53 грн |



















