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CY8C29666-24PVXIT INFINEON TECHNOLOGIES Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: Unclassified
Description: CY8C29666-24PVXIT
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
1000+853.76 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IRF7759L2TRPBF IRF7759L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Drain-source voltage: 75V
Drain current: 26A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 200nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: DirectFET
товару немає в наявності
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BSC160N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 14000 шт:
термін постачання 21-30 дні (днів)
5000+82.33 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPT004N03LATMA1 IPT004N03LATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60454DEB0411C&compId=IPT004N03L-DTE.pdf?ci_sign=ef66a83d0f89948fa0e0107be067086fb28ef786 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
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IRF3007STRLPBF INFINEON TECHNOLOGIES irf3007spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
800+66.69 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IPA60R160C6XKSA1 IPA60R160C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594BE848BB6B1BF&compId=IPA60R160C6-DTE.pdf?ci_sign=cd4ab842ed2aa4816396ca230e9b369a01d43a25 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSP92PH6327XTSA1 BSP92PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921DA8D59F31CC&compId=BSP92PH6327XTSA1-dte.pdf?ci_sign=c52b4a4e1e6278ec456dce8cdc96bdd2dbc992e9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.26A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 689 шт:
термін постачання 21-30 дні (днів)
10+41.99 грн
13+29.74 грн
25+25.08 грн
50+21.94 грн
65+13.84 грн
177+13.15 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IRFP4568PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1757 шт:
термін постачання 21-30 дні (днів)
25+234.64 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
IRFR4620TRLPBF IRFR4620TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C49CD67085F1A303005056AB0C4F&compId=irfr4620pbf.pdf?ci_sign=e4c12440734d4ce0004c05233e417a3999fb1ada Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Drain-source voltage: 200V
Drain current: 24A
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRG7PH44K10D-EPBF IRG7PH44K10D-EPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFB6C5931F75EA&compId=IRG7PH44K10D-EPBF.pdf?ci_sign=0be09883d41e44c5ba5fa10572f388cbdd705251 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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IPD60R170CFD7 IPD60R170CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7255599D874A&compId=IPD60R170CFD7.pdf?ci_sign=87050184a9d4b4583b02a8c4dcb529f39bd56eee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 76W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
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IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+652.05 грн
3+419.70 грн
6+396.77 грн
В кошику  од. на суму  грн.
IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+820.83 грн
2+668.93 грн
4+633.00 грн
В кошику  од. на суму  грн.
IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBCA67145851BF&compId=IPW65R420CFD-DTE.pdf?ci_sign=0d183952d44e9096ba03d9cc41c07ddb26aec1c1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+206.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBD7BE2A1DA143&compId=IPW60R037P7.pdf?ci_sign=a0965196f457b612a877e2bb887906e08fdd6397 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IPW65R080CFDFKSA1 IPW65R080CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB3522BD531BF&compId=IPW65R080CFD-DTE.pdf?ci_sign=9425d7ac9df299ed19596fbda93012c2681a7a80 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R041C6FKSA1 IPW60R041C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59527FBD16DF1BF&compId=IPW60R041C6-DTE.pdf?ci_sign=6837f4b5c1cab04482cc6edd814da7b3dad60443 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595309EB6B3D1BF&compId=IPW60R190P6-DTE.pdf?ci_sign=e714726303f0dd874f335ad607e36d2dccd82619 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW65R045C7FKSA1 IPW65R045C7FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAFD47D4B11BF&compId=IPW65R045C7-DTE.pdf?ci_sign=8d648a3816212f060a23a19c0413946ef1df3829 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IPW60R041P6FKSA1 IPW60R041P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59547CA850A91BF&compId=IPW60R041P6-DTE.pdf?ci_sign=91a46ec4514d9fb6d80b53b249ca522f48eca87b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IPW60R165CPFKSA1 IPW60R165CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E04B6D6851BF&compId=IPW60R165CP-DTE.pdf?ci_sign=87e4656475c1ecd10952d47f3a3d223a71b93867 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IPW65R019C7FKSA1 IPW65R019C7FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAAD717D771BF&compId=IPW65R019C7-DTE.pdf?ci_sign=715ed5a1b31fe8938352d25ce1874b5c4aaf05bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Power dissipation: 446W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R075CPFKSA1 IPW60R075CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E405349C71BF&compId=IPW60R075CP-DTE.pdf?ci_sign=5a09d9d26b7f0748255f3671620f7de31ad8b18d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R160C6FKSA1 IPW60R160C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595261245E051BF&compId=IPW60R160C6-DTE.pdf?ci_sign=6425d46596dbaab233c87914e1115ce6b5b52ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW65R065C7XKSA1 IPW65R065C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB141E3B7D1BF&compId=IPW65R065C7-DTE.pdf?ci_sign=b697dc6a7d602251722a4e5644a03c8ef601f8a2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW65R190CFDFKSA1 IPW65R190CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBC3CBE2E551BF&compId=IPW65R190CFD-DTE.pdf?ci_sign=60664da403736c52558797a28919c148db632515 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R037CSFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD91F1B02D00C4&compId=IPW60R037CSFDXKSA1.pdf?ci_sign=a5b2caf017057246ce187909fdc13399273536ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
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IPW60R040C7XKSA1 IPW60R040C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59549836BA8F1BF&compId=IPW60R040C7-DTE.pdf?ci_sign=fe636652d7245e19873032756aa4eb8485fd9ced Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R099C7XKSA1 IPW60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954C50104B51BF&compId=IPW60R099C7-DTE.pdf?ci_sign=12bc2fec5987eb013d3c3d8715002e0884a2c524 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R160P6FKSA1 IPW60R160P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595325472C251BF&compId=IPW60R160P6-DTE.pdf?ci_sign=47ac9163035aeb74dc0348932449acacc7cc8b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R170CFD7 IPW60R170CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8190E8C9A74A&compId=IPW60R170CFD7.pdf?ci_sign=32600af48a7fd72f2eedb26926faa7eb3392797a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R199CPFKSA1 IPW60R199CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DE899C65D1BF&compId=IPW60R199CP-DTE.pdf?ci_sign=8633e0ce83a8feedd0e7cc8d4606163b0f64beb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R299CPFKSA1 IPW60R299CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DC1E9E42B1BF&compId=IPW60R299CP-DTE.pdf?ci_sign=8119d6d1da96d49cea4c2f247bd22ecf791abcfd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R190C6XKSA1 IPP60R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944516ACCA91BF&compId=IPP60R190C6-DTE.pdf?ci_sign=656d49e416ee0ee069a2849faaa19764993ed0e3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
2+325.20 грн
3+266.81 грн
4+231.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099P7 IPP60R099P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1D8ADC57F2749&compId=IPP60R099P7.pdf?ci_sign=f712e67ed86a8f78e11410cb3eca32c304fb8895 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
2+333.43 грн
3+278.27 грн
4+268.34 грн
10+253.05 грн
50+243.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099C6XKSA1 IPP60R099C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945C848E84F1BF&compId=IPP60R099C6-DTE.pdf?ci_sign=309580ea66cbc75322c87db6d192b428c777e9ea Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
1+460.22 грн
4+246.93 грн
10+233.93 грн
В кошику  од. на суму  грн.
IPP60R165CPXKSA1 IPP60R165CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594570231AE91BF&compId=IPP60R165CP-DTE.pdf?ci_sign=db1213e31989efc1585e3a26d55298e6a8de380a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
2+292.27 грн
3+252.28 грн
5+209.47 грн
12+198.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP65R045C7XKSA1 IPP65R045C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93B1544DB51BF&compId=IPP65R045C7-DTE.pdf?ci_sign=9a69c5defdebe05376b0727807904645fe24291c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R099C7XKSA1 IPP60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A79FD13B11BF&compId=IPP60R099C7-DTE.pdf?ci_sign=a94abcc1c797aaf690d8a6def9357586264bf546 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R040C7XKSA1 IPP60R040C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A9491AA591BF&compId=IPP60R040C7-DTE.pdf?ci_sign=c417b0959efb0186cff5427e8e587a59f63375d8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R190E6XKSA1 IPP60R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59467B878FD31BF&compId=IPP60R190E6-DTE.pdf?ci_sign=e6d37a5db910c45a9b2ab0cc867290efd25d278b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R380C6XKSA1 IPP60R380C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944278B8EFD1BF&compId=IPP60R380C6-DTE.pdf?ci_sign=feb2bbac4dafe8cc7a7757c9ffa2197f7917bd82 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R190C6XKSA1 IPP65R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R190E6XKSA1 IPP65R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95C9A710011BF&compId=IPP65R190E6-DTE.pdf?ci_sign=7f819fdf24e47db7bb7e5f302ad1ab4224b75ce2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R095C7XKSA1 IPP65R095C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB9424047AE91BF&compId=IPP65R095C7-DTE.pdf?ci_sign=f8ae09ca77c7b8a29e1ed1b178a9ae42b093d995 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R160C6XKSA1 IPP60R160C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5946051F67B31BF&compId=IPP60R160C6-DTE.pdf?ci_sign=a1565c957472824309f6f4e61bbf6fb9fb379f82 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R250CPXKSA1 IPP60R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594521AEF3011BF&compId=IPP60R250CP-DTE.pdf?ci_sign=079b2c37446f3fa596ccde728948be63713015c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R330P6XKSA1 IPP60R330P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949EBC6C5371BF&compId=IPP60R330P6-DTE.pdf?ci_sign=835db5ec47fa2437bf293263ec6006b6202591e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59446BB076691BF&compId=IPP60R385CP-DTE.pdf?ci_sign=a5f75e28615451443f19cb06bfd1b89dd5501469 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R520C6XKSA1 IPP60R520C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945E47B46B31BF&compId=IPP60R520C6-DTE.pdf?ci_sign=2631e395f3c3a1fbc28072667d6e48d6233109a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R065C7XKSA1 IPP65R065C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93C310F5351BF&compId=IPP65R065C7-DTE.pdf?ci_sign=09a8b07890ce95ee833156022ebe0e693d191243 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R225C7XKSA1 IPP65R225C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB90D7372A51BF&compId=IPP65R225C7-DTE.pdf?ci_sign=377275d8e623ac997e45525f6a965f7f2792db38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R310CFDXKSA1 IPP65R310CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9625353B71BF&compId=IPP65R310CFD-DTE.pdf?ci_sign=e939a0d4ccdfde273e5b46a65ead8a2997f171df Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R420CFDXKSA1 IPP65R420CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9C936F5631BF&compId=IPP65R420CFD-DTE.pdf?ci_sign=ec1102f97d877cc4e6b9cdb8edb0b54fd9d7f4af Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R037C6FKSA1 IPW65R037C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAC6AC68FD1BF&compId=IPW65R037C6-DTE.pdf?ci_sign=f5c1bf79ad12e8c39d7b44b727cdf6d83cedefa8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 83.2A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 83.2A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R041CFDFKSA1 IPW65R041CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAD2A3F2ED1BF&compId=IPW65R041CFD-DTE.pdf?ci_sign=a8617e30d987107d126992e6736cae96b434da95 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R070C6FKSA1 IPW65R070C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB2904349D1BF&compId=IPW65R070C6-DTE.pdf?ci_sign=96122680c69aef64fea226adc12d211f04bd9e24 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R080CFDA IPW65R080CFDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D403245ADE74A&compId=IPW65R080CFDA.pdf?ci_sign=3cc3370567a07f40c2f18445a503b992be7d8ae8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R310CFDFKSA1 IPW65R310CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBC95B371731BF&compId=IPW65R310CFD-DTE.pdf?ci_sign=fd54e2f6131f8472cd466427d66d47a1c1b2bd82 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R660CFDFKSA1 IPW65R660CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBCC2E3AB391BF&compId=IPW65R660CFD-DTE.pdf?ci_sign=51c33f24ae5199d9dcd374c039b7fc6d37c17cac Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 62.5W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
CY8C29666-24PVXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C29666-24PVXIT
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+853.76 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IRF7759L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692
IRF7759L2TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Drain-source voltage: 75V
Drain current: 26A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 200nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: DirectFET
товару немає в наявності
В кошику  од. на суму  грн.
BSC160N15NS5ATMA1 Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 14000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+82.33 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPT004N03LATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60454DEB0411C&compId=IPT004N03L-DTE.pdf?ci_sign=ef66a83d0f89948fa0e0107be067086fb28ef786
IPT004N03LATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF3007STRLPBF irf3007spbf.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
800+66.69 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IPA60R160C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594BE848BB6B1BF&compId=IPA60R160C6-DTE.pdf?ci_sign=cd4ab842ed2aa4816396ca230e9b369a01d43a25
IPA60R160C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSP92PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921DA8D59F31CC&compId=BSP92PH6327XTSA1-dte.pdf?ci_sign=c52b4a4e1e6278ec456dce8cdc96bdd2dbc992e9
BSP92PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.26A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 689 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+41.99 грн
13+29.74 грн
25+25.08 грн
50+21.94 грн
65+13.84 грн
177+13.15 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IRFP4568PBFXKMA1 Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1757 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+234.64 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
IRFR4620TRLPBF pVersion=0046&contRep=ZT&docId=E221C49CD67085F1A303005056AB0C4F&compId=irfr4620pbf.pdf?ci_sign=e4c12440734d4ce0004c05233e417a3999fb1ada
IRFR4620TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Drain-source voltage: 200V
Drain current: 24A
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRG7PH44K10D-EPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFB6C5931F75EA&compId=IRG7PH44K10D-EPBF.pdf?ci_sign=0be09883d41e44c5ba5fa10572f388cbdd705251
IRG7PH44K10D-EPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R170CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7255599D874A&compId=IPD60R170CFD7.pdf?ci_sign=87050184a9d4b4583b02a8c4dcb529f39bd56eee
IPD60R170CFD7
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 76W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R099CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7
IPW60R099CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+652.05 грн
3+419.70 грн
6+396.77 грн
В кошику  од. на суму  грн.
IPW60R031CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937
IPW60R031CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+820.83 грн
2+668.93 грн
4+633.00 грн
В кошику  од. на суму  грн.
IPW65R420CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBCA67145851BF&compId=IPW65R420CFD-DTE.pdf?ci_sign=0d183952d44e9096ba03d9cc41c07ddb26aec1c1
IPW65R420CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+206.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R037P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBD7BE2A1DA143&compId=IPW60R037P7.pdf?ci_sign=a0965196f457b612a877e2bb887906e08fdd6397
IPW60R037P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R080CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB3522BD531BF&compId=IPW65R080CFD-DTE.pdf?ci_sign=9425d7ac9df299ed19596fbda93012c2681a7a80
IPW65R080CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R041C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59527FBD16DF1BF&compId=IPW60R041C6-DTE.pdf?ci_sign=6837f4b5c1cab04482cc6edd814da7b3dad60443
IPW60R041C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R190P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595309EB6B3D1BF&compId=IPW60R190P6-DTE.pdf?ci_sign=e714726303f0dd874f335ad607e36d2dccd82619
IPW60R190P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R045C7FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAFD47D4B11BF&compId=IPW65R045C7-DTE.pdf?ci_sign=8d648a3816212f060a23a19c0413946ef1df3829
IPW65R045C7FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R041P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59547CA850A91BF&compId=IPW60R041P6-DTE.pdf?ci_sign=91a46ec4514d9fb6d80b53b249ca522f48eca87b
IPW60R041P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R165CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E04B6D6851BF&compId=IPW60R165CP-DTE.pdf?ci_sign=87e4656475c1ecd10952d47f3a3d223a71b93867
IPW60R165CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R019C7FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAAD717D771BF&compId=IPW65R019C7-DTE.pdf?ci_sign=715ed5a1b31fe8938352d25ce1874b5c4aaf05bb
IPW65R019C7FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Power dissipation: 446W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R075CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E405349C71BF&compId=IPW60R075CP-DTE.pdf?ci_sign=5a09d9d26b7f0748255f3671620f7de31ad8b18d
IPW60R075CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R160C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595261245E051BF&compId=IPW60R160C6-DTE.pdf?ci_sign=6425d46596dbaab233c87914e1115ce6b5b52ea6
IPW60R160C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R065C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB141E3B7D1BF&compId=IPW65R065C7-DTE.pdf?ci_sign=b697dc6a7d602251722a4e5644a03c8ef601f8a2
IPW65R065C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R190CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBC3CBE2E551BF&compId=IPW65R190CFD-DTE.pdf?ci_sign=60664da403736c52558797a28919c148db632515
IPW65R190CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R037CSFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD91F1B02D00C4&compId=IPW60R037CSFDXKSA1.pdf?ci_sign=a5b2caf017057246ce187909fdc13399273536ca
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R040C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59549836BA8F1BF&compId=IPW60R040C7-DTE.pdf?ci_sign=fe636652d7245e19873032756aa4eb8485fd9ced
IPW60R040C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954C50104B51BF&compId=IPW60R099C7-DTE.pdf?ci_sign=12bc2fec5987eb013d3c3d8715002e0884a2c524
IPW60R099C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R160P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595325472C251BF&compId=IPW60R160P6-DTE.pdf?ci_sign=47ac9163035aeb74dc0348932449acacc7cc8b4b
IPW60R160P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R170CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8190E8C9A74A&compId=IPW60R170CFD7.pdf?ci_sign=32600af48a7fd72f2eedb26926faa7eb3392797a
IPW60R170CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R199CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DE899C65D1BF&compId=IPW60R199CP-DTE.pdf?ci_sign=8633e0ce83a8feedd0e7cc8d4606163b0f64beb2
IPW60R199CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R299CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DC1E9E42B1BF&compId=IPW60R299CP-DTE.pdf?ci_sign=8119d6d1da96d49cea4c2f247bd22ecf791abcfd
IPW60R299CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944516ACCA91BF&compId=IPP60R190C6-DTE.pdf?ci_sign=656d49e416ee0ee069a2849faaa19764993ed0e3
IPP60R190C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+325.20 грн
3+266.81 грн
4+231.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1D8ADC57F2749&compId=IPP60R099P7.pdf?ci_sign=f712e67ed86a8f78e11410cb3eca32c304fb8895
IPP60R099P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+333.43 грн
3+278.27 грн
4+268.34 грн
10+253.05 грн
50+243.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945C848E84F1BF&compId=IPP60R099C6-DTE.pdf?ci_sign=309580ea66cbc75322c87db6d192b428c777e9ea
IPP60R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+460.22 грн
4+246.93 грн
10+233.93 грн
В кошику  од. на суму  грн.
IPP60R165CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594570231AE91BF&compId=IPP60R165CP-DTE.pdf?ci_sign=db1213e31989efc1585e3a26d55298e6a8de380a
IPP60R165CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+292.27 грн
3+252.28 грн
5+209.47 грн
12+198.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP65R045C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93B1544DB51BF&compId=IPP65R045C7-DTE.pdf?ci_sign=9a69c5defdebe05376b0727807904645fe24291c
IPP65R045C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A79FD13B11BF&compId=IPP60R099C7-DTE.pdf?ci_sign=a94abcc1c797aaf690d8a6def9357586264bf546
IPP60R099C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R040C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A9491AA591BF&compId=IPP60R040C7-DTE.pdf?ci_sign=c417b0959efb0186cff5427e8e587a59f63375d8
IPP60R040C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59467B878FD31BF&compId=IPP60R190E6-DTE.pdf?ci_sign=e6d37a5db910c45a9b2ab0cc867290efd25d278b
IPP60R190E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R380C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944278B8EFD1BF&compId=IPP60R380C6-DTE.pdf?ci_sign=feb2bbac4dafe8cc7a7757c9ffa2197f7917bd82
IPP60R380C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f
IPP65R190C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95C9A710011BF&compId=IPP65R190E6-DTE.pdf?ci_sign=7f819fdf24e47db7bb7e5f302ad1ab4224b75ce2
IPP65R190E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R095C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB9424047AE91BF&compId=IPP65R095C7-DTE.pdf?ci_sign=f8ae09ca77c7b8a29e1ed1b178a9ae42b093d995
IPP65R095C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R160C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5946051F67B31BF&compId=IPP60R160C6-DTE.pdf?ci_sign=a1565c957472824309f6f4e61bbf6fb9fb379f82
IPP60R160C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594521AEF3011BF&compId=IPP60R250CP-DTE.pdf?ci_sign=079b2c37446f3fa596ccde728948be63713015c0
IPP60R250CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R330P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949EBC6C5371BF&compId=IPP60R330P6-DTE.pdf?ci_sign=835db5ec47fa2437bf293263ec6006b6202591e4
IPP60R330P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R385CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59446BB076691BF&compId=IPP60R385CP-DTE.pdf?ci_sign=a5f75e28615451443f19cb06bfd1b89dd5501469
IPP60R385CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R520C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945E47B46B31BF&compId=IPP60R520C6-DTE.pdf?ci_sign=2631e395f3c3a1fbc28072667d6e48d6233109a7
IPP60R520C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R065C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93C310F5351BF&compId=IPP65R065C7-DTE.pdf?ci_sign=09a8b07890ce95ee833156022ebe0e693d191243
IPP65R065C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IPP65R225C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB90D7372A51BF&compId=IPP65R225C7-DTE.pdf?ci_sign=377275d8e623ac997e45525f6a965f7f2792db38
IPP65R225C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R310CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9625353B71BF&compId=IPP65R310CFD-DTE.pdf?ci_sign=e939a0d4ccdfde273e5b46a65ead8a2997f171df
IPP65R310CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R420CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9C936F5631BF&compId=IPP65R420CFD-DTE.pdf?ci_sign=ec1102f97d877cc4e6b9cdb8edb0b54fd9d7f4af
IPP65R420CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R037C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAC6AC68FD1BF&compId=IPW65R037C6-DTE.pdf?ci_sign=f5c1bf79ad12e8c39d7b44b727cdf6d83cedefa8
IPW65R037C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 83.2A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 83.2A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R041CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAD2A3F2ED1BF&compId=IPW65R041CFD-DTE.pdf?ci_sign=a8617e30d987107d126992e6736cae96b434da95
IPW65R041CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R070C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB2904349D1BF&compId=IPW65R070C6-DTE.pdf?ci_sign=96122680c69aef64fea226adc12d211f04bd9e24
IPW65R070C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R080CFDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D403245ADE74A&compId=IPW65R080CFDA.pdf?ci_sign=3cc3370567a07f40c2f18445a503b992be7d8ae8
IPW65R080CFDA
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R310CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBC95B371731BF&compId=IPW65R310CFD-DTE.pdf?ci_sign=fd54e2f6131f8472cd466427d66d47a1c1b2bd82
IPW65R310CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R660CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBCC2E3AB391BF&compId=IPW65R660CFD-DTE.pdf?ci_sign=51c33f24ae5199d9dcd374c039b7fc6d37c17cac
IPW65R660CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 62.5W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
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