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IGCM20F60GAXKMA1 IGCM20F60GAXKMA1 Infineon Technologies Infineon-IGCM20F60GA-DS-v01_06-EN.pdf?fileId=5546d4624fb7fef2014fcb1efd587879 Description: IGBT 600V 20A 24PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
1+997.95 грн
14+642.96 грн
112+504.53 грн
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IGCM20F60HAXKMA1 IGCM20F60HAXKMA1 Infineon Technologies IGCM20F60HA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IGW40N65F5AXKSA1 IGW40N65F5AXKSA1 Infineon Technologies IGW40N65F5A.pdf Description: IGBT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Grade: Automotive
Qualification: AEC-Q101
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IGW40N65H5AXKSA1 IGW40N65H5AXKSA1 Infineon Technologies IGW40N65H5A.pdf Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/149ns
Switching Energy: 360µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 92 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Grade: Automotive
Qualification: AEC-Q101
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IGW50N65F5AXKSA1 IGW50N65F5AXKSA1 Infineon Technologies IGW50N65F5A.pdf Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
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IGW50N65H5AXKSA1 IGW50N65H5AXKSA1 Infineon Technologies IGW50N65H5A.pdf Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/173ns
Switching Energy: 450µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
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IGW60N60H3FKSA1 IGW60N60H3FKSA1 Infineon Technologies Infineon-IGW60N60H3-DS-v01_01-en.pdf?fileId=db3a304339dcf4b10139dd4fd82c0023 Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
на замовлення 279 шт:
термін постачання 21-31 дні (днів)
1+544.33 грн
30+302.57 грн
120+253.84 грн
В кошику  од. на суму  грн.
IHW30N65R5XKSA1 IHW30N65R5XKSA1 Infineon Technologies Infineon-IHW30N65R5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014db954d0454713 Description: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/220ns
Switching Energy: 850µJ (on), 240µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 153 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 176 W
на замовлення 391 шт:
термін постачання 21-31 дні (днів)
2+275.35 грн
30+145.02 грн
120+118.53 грн
Мінімальне замовлення: 2
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IJW120R100T1FKSA1 IJW120R100T1FKSA1 Infineon Technologies IJW120R100T1.pdf Description: JFET N-CH 1.2KV 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 26 A
Supplier Device Package: PG-TO247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 190 W
Resistance - RDS(On): 100 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 µA @ 1200 V
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IKB20N60TAATMA1 IKB20N60TAATMA1 Infineon Technologies IKB20N60TA.pdf Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
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IKCM10H60HAXKMA1 IKCM10H60HAXKMA1 Infineon Technologies IKCM10H60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IKCM10L60HAXKMA1 IKCM10L60HAXKMA1 Infineon Technologies IKCM10L60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IKCM15H60HAXKMA1 IKCM15H60HAXKMA1 Infineon Technologies IKCM15H60HA.pdf Description: IFPS MODULE 600V 15A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
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IKCM15L60HAXKMA1 IKCM15L60HAXKMA1 Infineon Technologies IKCM15L60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
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IKCM15R60GDXKMA1 IKCM15R60GDXKMA1 Infineon Technologies Infineon-IKCM15R60GD-DS-v01_00-EN.pdf?fileId=5546d4624fb7fef2014fcb96064b792a Description: IFPS MODULE 600V 30A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
товару немає в наявності
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IKCM20L60GDXKMA1 IKCM20L60GDXKMA1 Infineon Technologies Infineon-IKCM20L60GD-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb960e6a792d Description: IFPS MODULE 600V 20A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
на замовлення 329 шт:
термін постачання 21-31 дні (днів)
1+998.74 грн
14+742.85 грн
28+707.57 грн
112+653.19 грн
В кошику  од. на суму  грн.
IKCM20L60HAXKMA1 IKCM20L60HAXKMA1 Infineon Technologies IKCM20L60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IKCM20L60HDXKMA1 IKCM20L60HDXKMA1 Infineon Technologies IKCM20L60HD.pdf Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IKCM20R60GDXKMA1 IKCM20R60GDXKMA1 Infineon Technologies Infineon-IKCM20R60GD-DS-v01_00-EN.pdf?fileId=5546d4624fb7fef2014fcb961ead7933 Description: IFPS MODULE 600V 20A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
1+1212.81 грн
14+902.36 грн
28+859.55 грн
В кошику  од. на суму  грн.
IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 Infineon Technologies Infineon-IKCM30F60GA-DS-v01_03-EN.pdf?fileId=5546d4624fb7fef2014fcb83cab8790a Description: IFPS MODULE 600V 30A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
на замовлення 2278 шт:
термін постачання 21-31 дні (днів)
1+1048.08 грн
14+780.90 грн
28+744.06 грн
112+688.57 грн
В кошику  од. на суму  грн.
IKCM30F60GDXKMA1 IKCM30F60GDXKMA1 Infineon Technologies Infineon-IKCM30F60GD-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb9626d07936 Description: IFPS MODULE 600V 30A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+1458.72 грн
В кошику  од. на суму  грн.
IKCM30F60HAXKMA1 IKCM30F60HAXKMA1 Infineon Technologies IKCM30F60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
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IKCM30F60HDXKMA1 IKCM30F60HDXKMA1 Infineon Technologies IKCM30F60HD.pdf Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
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IKD03N60RFAATMA1 IKD03N60RFAATMA1 Infineon Technologies IKD03N60RFA.pdf Description: IGBT TRENCH 600V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
Qualification: AEC-Q101
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IKD04N60RAATMA1 IKD04N60RAATMA1 Infineon Technologies IKD04N60RA.pdf Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
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IKD04N60RFAATMA1 IKD04N60RFAATMA1 Infineon Technologies IKD04N60RFA.pdf Description: IGBT 600V 8A 75W TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 60µJ (on), 50µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Grade: Automotive
Qualification: AEC-Q101
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IKD06N60RFAATMA1 IKD06N60RFAATMA1 Infineon Technologies IKD06N60RFA.pdf Description: IGBT TRENCH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 8ns/105ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Grade: Automotive
Qualification: AEC-Q101
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IKD10N60RFAATMA1 IKD10N60RFAATMA1 Infineon Technologies IKD10N60RFA.pdf Description: IGBT 600V 20A 150W PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
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IKD15N60RFAATMA1 IKD15N60RFAATMA1 Infineon Technologies IKD15N60RFA.pdf Description: IGBT TRENCH 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
Grade: Automotive
Qualification: AEC-Q101
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IKQ100N60TAXKSA1 IKQ100N60TAXKSA1 Infineon Technologies IKQ100N60TA.pdf Description: IGBT 600V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IKQ100N60TXKSA1 IKQ100N60TXKSA1 Infineon Technologies Infineon-IKQ100N60T-DS-v02_02-EN.pdf?fileId=5546d46249cd10140149d2278ce24df2 Description: IGBT TRENCH/FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
товару немає в наявності
В кошику  од. на суму  грн.
IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 Infineon Technologies IKQ120N60TA.pdf Description: IGBT TRENCH FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 280 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/310ns
Switching Energy: 4.1mJ (on), 2.8mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 772 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
Qualification: AEC-Q101
товару немає в наявності
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IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 Infineon Technologies IKW30N65WR5_DS.pdf Description: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 39ns/367ns
Switching Energy: 990µJ (on), 330µJ (off)
Test Condition: 400V, 15A, 26Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 185 W
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
2+206.11 грн
30+106.50 грн
120+86.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKW40N65F5AXKSA1 IKW40N65F5AXKSA1 Infineon Technologies IKW40N65F5A.pdf Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IKW40N65H5AXKSA1 IKW40N65H5AXKSA1 Infineon Technologies IKW40N65H5A.pdf Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/153ns
Switching Energy: 380µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 92 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IKW40N65WR5XKSA1 IKW40N65WR5XKSA1 Infineon Technologies Infineon-IKW40N65WR5-DS-v02_01-EN.pdf?fileId=5546d4624c330ffd014c70100f2560de Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 42ns/432ns
Switching Energy: 770µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 193 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230 W
товару немає в наявності
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IKW50N65F5AXKSA1 IKW50N65F5AXKSA1 Infineon Technologies IKW50N65F5A.pdf Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 77 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IKW50N65WR5XKSA1 IKW50N65WR5XKSA1 Infineon Technologies Infineon-IKW50N65WR5-DS-v02_01-EN.pdf?fileId=5546d4624c330ffd014c7099770661b8 Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/417ns
Switching Energy: 840µJ (on), 220µJ (off)
Test Condition: 400V, 25A, 16Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 282 W
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
1+326.28 грн
30+174.01 грн
120+143.13 грн
В кошику  од. на суму  грн.
IKW60N60H3FKSA1 IKW60N60H3FKSA1 Infineon Technologies Infineon-IKW60N60H3-DS-v01_02-en.pdf?fileId=db3a304339dcf4b10139dd87e517004f Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
1+476.69 грн
30+266.58 грн
120+246.75 грн
В кошику  од. на суму  грн.
ILD1150XUMA1 ILD1150XUMA1 Infineon Technologies Infineon-ILD1150-DS-v01_01-en.pdf?fileId=db3a30433784a0400138049268c94c20 Description: IC LED DRIVER CTRLR PWM 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-3
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
товару немає в наявності
В кошику  од. на суму  грн.
ILD4071XUMA1 ILD4071XUMA1 Infineon Technologies ILD4071.pdf Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50kHz ~ 300kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 700mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 40V
товару немає в наявності
В кошику  од. на суму  грн.
IPA041N04NGXKSA1 IPA041N04NGXKSA1 Infineon Technologies Infineon-IPA041N04N_G-DS-v02_00-en.pdf?fileId=5546d46145460399014560aaf8193f1c Description: MOSFET N-CH 40V 70A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 70A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
3+115.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA060N06NXKSA1 IPA060N06NXKSA1 Infineon Technologies DS_IPA060N06N_2_1.pdf?fileId=5546d46146d18cb40146f653200154cf Description: MOSFET N-CH 60V 45A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 637 шт:
термін постачання 21-31 дні (днів)
2+175.08 грн
50+83.48 грн
100+81.05 грн
500+58.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R099C7XKSA1 IPA60R099C7XKSA1 Infineon Technologies Infineon-IPA60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd68760b06999 Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
1+367.66 грн
50+199.37 грн
100+185.94 грн
В кошику  од. на суму  грн.
IPA60R180C7XKSA1 IPA60R180C7XKSA1 Infineon Technologies Infineon-IPA60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd65089d0627d Description: MOSFET N-CH 600V 9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
2+209.30 грн
50+107.52 грн
100+103.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA65R045C7XKSA1 IPA65R045C7XKSA1 Infineon Technologies INFNS29944-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 18A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+870.62 грн
В кошику  од. на суму  грн.
IPA65R065C7XKSA1 IPA65R065C7XKSA1 Infineon Technologies Infineon-IPA65R065C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be66fa89001a Description: MOSFET N-CH 650V 15A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
1+580.15 грн
50+302.96 грн
100+278.26 грн
В кошику  од. на суму  грн.
IPA65R095C7XKSA1 IPA65R095C7XKSA1 Infineon Technologies Infineon-IPA65R095C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be754266003b Description: MOSFET N-CH 650V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R125C7XKSA1 IPA65R125C7XKSA1 Infineon Technologies Infineon-IPA65R125C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be863f5d005b Description: MOSFET N-CH 650V 10A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
на замовлення 342 шт:
термін постачання 21-31 дні (днів)
2+300.82 грн
50+229.15 грн
100+196.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA65R225C7XKSA1 IPA65R225C7XKSA1 Infineon Technologies Infineon-IPA65R225C7-DS-v02_00-en.pdf?fileId=db3a304343bec32d0143bf743f7c0c63 Description: MOSFET N-CH 650V 7A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA80R1K0CEXKSA2 IPA80R1K0CEXKSA2 Infineon Technologies Infineon-IPA80R1K0CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c776020e1e3b Description: MOSFET N-CH 800V 5.7A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
товару немає в наявності
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 Infineon Technologies Infineon-IPB015N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca3499a41e96 Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+258.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB020N08N5ATMA1 IPB020N08N5ATMA1 Infineon Technologies Infineon-IPB020N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac98fb6291b4d Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 208µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+140.20 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB031N08N5ATMA1 IPB031N08N5ATMA1 Infineon Technologies Infineon-IPB031N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac9cfdf5b1b81 Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+98.90 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB065N10N3GATMA1 IPB065N10N3GATMA1 Infineon Technologies Infineon-IPB065N10N3+G-DS-v02_00-EN.pdf?fileId=5546d4624b0b249c014b7983a7000f6f Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
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IPB120N03S4L03ATMA1 IPB120N03S4L03ATMA1 Infineon Technologies Infineon-IPB120N03S4L-03-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3606cf60466 Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IPB120N04S404ATMA1 IPB120N04S404ATMA1 Infineon Technologies Infineon-IPB120N04S4-04-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3ce545c062f Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IPB140N08S404ATMA1 IPB140N08S404ATMA1 Infineon Technologies IPB140N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e40147ed659561055b Description: MOSFET N-CH 80V 140A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Qualification: AEC-Q101
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IPB160N08S403ATMA1 IPB160N08S403ATMA1 Infineon Technologies IPB160N08S4-03.pdf Description: MOSFET N-CH 80V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IPB180N04S4LH0ATMA1 IPB180N04S4LH0ATMA1 Infineon Technologies Infineon-IPB180N04S4LH010-DS-v01_00-en.pdf?fileId=5546d461464245d3014670cf90ea6434 Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24440 pF @ 25 V
Qualification: AEC-Q101
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IGCM20F60GAXKMA1 Infineon-IGCM20F60GA-DS-v01_06-EN.pdf?fileId=5546d4624fb7fef2014fcb1efd587879
IGCM20F60GAXKMA1
Виробник: Infineon Technologies
Description: IGBT 600V 20A 24PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+997.95 грн
14+642.96 грн
112+504.53 грн
В кошику  од. на суму  грн.
IGCM20F60HAXKMA1 IGCM20F60HA.pdf
IGCM20F60HAXKMA1
Виробник: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IGW40N65F5AXKSA1 IGW40N65F5A.pdf
IGW40N65F5AXKSA1
Виробник: Infineon Technologies
Description: IGBT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Grade: Automotive
Qualification: AEC-Q101
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IGW40N65H5AXKSA1 IGW40N65H5A.pdf
IGW40N65H5AXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/149ns
Switching Energy: 360µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 92 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Grade: Automotive
Qualification: AEC-Q101
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IGW50N65F5AXKSA1 IGW50N65F5A.pdf
IGW50N65F5AXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
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IGW50N65H5AXKSA1 IGW50N65H5A.pdf
IGW50N65H5AXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/173ns
Switching Energy: 450µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
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IGW60N60H3FKSA1 Infineon-IGW60N60H3-DS-v01_01-en.pdf?fileId=db3a304339dcf4b10139dd4fd82c0023
IGW60N60H3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
на замовлення 279 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+544.33 грн
30+302.57 грн
120+253.84 грн
В кошику  од. на суму  грн.
IHW30N65R5XKSA1 Infineon-IHW30N65R5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014db954d0454713
IHW30N65R5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/220ns
Switching Energy: 850µJ (on), 240µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 153 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 176 W
на замовлення 391 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+275.35 грн
30+145.02 грн
120+118.53 грн
Мінімальне замовлення: 2
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IJW120R100T1FKSA1 IJW120R100T1.pdf
IJW120R100T1FKSA1
Виробник: Infineon Technologies
Description: JFET N-CH 1.2KV 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 26 A
Supplier Device Package: PG-TO247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 190 W
Resistance - RDS(On): 100 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 µA @ 1200 V
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IKB20N60TAATMA1 IKB20N60TA.pdf
IKB20N60TAATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
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IKCM10H60HAXKMA1 IKCM10H60HA.pdf
IKCM10H60HAXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IKCM10L60HAXKMA1 IKCM10L60HA.pdf
IKCM10L60HAXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IKCM15H60HAXKMA1 IKCM15H60HA.pdf
IKCM15H60HAXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULE 600V 15A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
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IKCM15L60HAXKMA1 IKCM15L60HA.pdf
IKCM15L60HAXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
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IKCM15R60GDXKMA1 Infineon-IKCM15R60GD-DS-v01_00-EN.pdf?fileId=5546d4624fb7fef2014fcb96064b792a
IKCM15R60GDXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULE 600V 30A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
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IKCM20L60GDXKMA1 Infineon-IKCM20L60GD-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb960e6a792d
IKCM20L60GDXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULE 600V 20A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
на замовлення 329 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+998.74 грн
14+742.85 грн
28+707.57 грн
112+653.19 грн
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IKCM20L60HAXKMA1 IKCM20L60HA.pdf
IKCM20L60HAXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IKCM20L60HDXKMA1 IKCM20L60HD.pdf
IKCM20L60HDXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IKCM20R60GDXKMA1 Infineon-IKCM20R60GD-DS-v01_00-EN.pdf?fileId=5546d4624fb7fef2014fcb961ead7933
IKCM20R60GDXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULE 600V 20A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1212.81 грн
14+902.36 грн
28+859.55 грн
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IKCM30F60GAXKMA1 Infineon-IKCM30F60GA-DS-v01_03-EN.pdf?fileId=5546d4624fb7fef2014fcb83cab8790a
IKCM30F60GAXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULE 600V 30A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
на замовлення 2278 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1048.08 грн
14+780.90 грн
28+744.06 грн
112+688.57 грн
В кошику  од. на суму  грн.
IKCM30F60GDXKMA1 Infineon-IKCM30F60GD-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb9626d07936
IKCM30F60GDXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULE 600V 30A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1458.72 грн
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IKCM30F60HAXKMA1 IKCM30F60HA.pdf
IKCM30F60HAXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
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IKCM30F60HDXKMA1 IKCM30F60HD.pdf
IKCM30F60HDXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
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IKD03N60RFAATMA1 IKD03N60RFA.pdf
IKD03N60RFAATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
Qualification: AEC-Q101
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IKD04N60RAATMA1 IKD04N60RA.pdf
IKD04N60RAATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
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IKD04N60RFAATMA1 IKD04N60RFA.pdf
IKD04N60RFAATMA1
Виробник: Infineon Technologies
Description: IGBT 600V 8A 75W TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 60µJ (on), 50µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Grade: Automotive
Qualification: AEC-Q101
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IKD06N60RFAATMA1 IKD06N60RFA.pdf
IKD06N60RFAATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 8ns/105ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Grade: Automotive
Qualification: AEC-Q101
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IKD10N60RFAATMA1 IKD10N60RFA.pdf
IKD10N60RFAATMA1
Виробник: Infineon Technologies
Description: IGBT 600V 20A 150W PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
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IKD15N60RFAATMA1 IKD15N60RFA.pdf
IKD15N60RFAATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
Grade: Automotive
Qualification: AEC-Q101
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IKQ100N60TAXKSA1 IKQ100N60TA.pdf
IKQ100N60TAXKSA1
Виробник: Infineon Technologies
Description: IGBT 600V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
Qualification: AEC-Q101
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IKQ100N60TXKSA1 Infineon-IKQ100N60T-DS-v02_02-EN.pdf?fileId=5546d46249cd10140149d2278ce24df2
IKQ100N60TXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH/FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
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IKQ120N60TAXKSA1 IKQ120N60TA.pdf
IKQ120N60TAXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 280 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/310ns
Switching Energy: 4.1mJ (on), 2.8mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 772 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
Qualification: AEC-Q101
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IKW30N65WR5XKSA1 IKW30N65WR5_DS.pdf
IKW30N65WR5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 39ns/367ns
Switching Energy: 990µJ (on), 330µJ (off)
Test Condition: 400V, 15A, 26Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 185 W
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.11 грн
30+106.50 грн
120+86.11 грн
Мінімальне замовлення: 2
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IKW40N65F5AXKSA1 IKW40N65F5A.pdf
IKW40N65F5AXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
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IKW40N65H5AXKSA1 IKW40N65H5A.pdf
IKW40N65H5AXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/153ns
Switching Energy: 380µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 92 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
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IKW40N65WR5XKSA1 Infineon-IKW40N65WR5-DS-v02_01-EN.pdf?fileId=5546d4624c330ffd014c70100f2560de
IKW40N65WR5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 42ns/432ns
Switching Energy: 770µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 193 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230 W
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IKW50N65F5AXKSA1 IKW50N65F5A.pdf
IKW50N65F5AXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 77 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
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IKW50N65WR5XKSA1 Infineon-IKW50N65WR5-DS-v02_01-EN.pdf?fileId=5546d4624c330ffd014c7099770661b8
IKW50N65WR5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/417ns
Switching Energy: 840µJ (on), 220µJ (off)
Test Condition: 400V, 25A, 16Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 282 W
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+326.28 грн
30+174.01 грн
120+143.13 грн
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IKW60N60H3FKSA1 Infineon-IKW60N60H3-DS-v01_02-en.pdf?fileId=db3a304339dcf4b10139dd87e517004f
IKW60N60H3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+476.69 грн
30+266.58 грн
120+246.75 грн
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ILD1150XUMA1 Infineon-ILD1150-DS-v01_01-en.pdf?fileId=db3a30433784a0400138049268c94c20
ILD1150XUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-3
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
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ILD4071XUMA1 ILD4071.pdf
ILD4071XUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50kHz ~ 300kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 700mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 40V
товару немає в наявності
В кошику  од. на суму  грн.
IPA041N04NGXKSA1 Infineon-IPA041N04N_G-DS-v02_00-en.pdf?fileId=5546d46145460399014560aaf8193f1c
IPA041N04NGXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 70A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA060N06NXKSA1 DS_IPA060N06N_2_1.pdf?fileId=5546d46146d18cb40146f653200154cf
IPA060N06NXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 637 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.08 грн
50+83.48 грн
100+81.05 грн
500+58.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R099C7XKSA1 Infineon-IPA60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd68760b06999
IPA60R099C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+367.66 грн
50+199.37 грн
100+185.94 грн
В кошику  од. на суму  грн.
IPA60R180C7XKSA1 Infineon-IPA60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd65089d0627d
IPA60R180C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+209.30 грн
50+107.52 грн
100+103.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA65R045C7XKSA1 INFNS29944-1.pdf?t.download=true&u=5oefqw
IPA65R045C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+870.62 грн
В кошику  од. на суму  грн.
IPA65R065C7XKSA1 Infineon-IPA65R065C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be66fa89001a
IPA65R065C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 15A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+580.15 грн
50+302.96 грн
100+278.26 грн
В кошику  од. на суму  грн.
IPA65R095C7XKSA1 Infineon-IPA65R095C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be754266003b
IPA65R095C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R125C7XKSA1 Infineon-IPA65R125C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be863f5d005b
IPA65R125C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
на замовлення 342 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+300.82 грн
50+229.15 грн
100+196.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA65R225C7XKSA1 Infineon-IPA65R225C7-DS-v02_00-en.pdf?fileId=db3a304343bec32d0143bf743f7c0c63
IPA65R225C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
товару немає в наявності
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IPA80R1K0CEXKSA2 Infineon-IPA80R1K0CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c776020e1e3b
IPA80R1K0CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB015N08N5ATMA1 Infineon-IPB015N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca3499a41e96
IPB015N08N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+258.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB020N08N5ATMA1 Infineon-IPB020N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac98fb6291b4d
IPB020N08N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 208µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+140.20 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB031N08N5ATMA1 Infineon-IPB031N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac9cfdf5b1b81
IPB031N08N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+98.90 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB065N10N3GATMA1 Infineon-IPB065N10N3+G-DS-v02_00-EN.pdf?fileId=5546d4624b0b249c014b7983a7000f6f
IPB065N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
товару немає в наявності
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IPB120N03S4L03ATMA1 Infineon-IPB120N03S4L-03-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3606cf60466
IPB120N03S4L03ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IPB120N04S404ATMA1 Infineon-IPB120N04S4-04-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3ce545c062f
IPB120N04S404ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IPB140N08S404ATMA1 IPB140N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e40147ed659561055b
IPB140N08S404ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 140A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IPB160N08S403ATMA1 IPB160N08S4-03.pdf
IPB160N08S403ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IPB180N04S4LH0ATMA1 Infineon-IPB180N04S4LH010-DS-v01_00-en.pdf?fileId=5546d461464245d3014670cf90ea6434
IPB180N04S4LH0ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24440 pF @ 25 V
Qualification: AEC-Q101
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