Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148772) > Сторінка 272 з 2480
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CY7C1380KV33-167BZI | Infineon Technologies |
 Description: IC SRAM 18MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY7C1381KV33-100BZXI | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 100 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 8.5 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
на замовлення 272 шт: термін постачання 21-31 дні (днів) |
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CY7C1381KV33-133AXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 6.5 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
на замовлення 144 шт: термін постачання 21-31 дні (днів) |
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CY7C1381KV33-133AXI | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 6.5 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
на замовлення 422 шт: термін постачання 21-31 дні (днів) |
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CY7C1383KV33-133AXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 6.5 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY7C1386KV33-167AXC | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCETOOLV1 | Infineon Technologies |
Description: DEVELOPMENT KIT FOR 100-SERIES, Packaging: Box Type: Debugger, Programmer (In-Circuit/In-System) Contents: Board(s), Cable(s) Utilized IC / Part: IRMCFxxx, IRMCKxxx |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRF60R217 | Infineon Technologies |
Description: MOSFET N-CH 60V 58A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||
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IRL60S216 | Infineon Technologies |
Description: MOSFET N-CH 60V 195A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRF60R217 | Infineon Technologies |
Description: MOSFET N-CH 60V 58A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V |
на замовлення 204 шт: термін постачання 21-31 дні (днів) |
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IRL60S216 | Infineon Technologies |
Description: MOSFET N-CH 60V 195A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTFA092213FLV5R250XTMA1 | Infineon Technologies |
Description: IC FET RF LDMOS H-34288-6 Packaging: Tape & Reel (TR) Package / Case: 2-Flatpack, Fin Leads, Flanged Mounting Type: Surface Mount Frequency: 960MHz Power - Output: 200W Gain: 17.5dB Technology: LDMOS Supplier Device Package: H-34288-2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 1.85 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PTFA092213FLV5XWSA1 | Infineon Technologies |
Description: IC FET RF LDMOS H-34288-4/2 Packaging: Tray Package / Case: 2-Flatpack, Fin Leads, Flanged Mounting Type: Surface Mount Frequency: 960MHz Power - Output: 200W Gain: 17.5dB Technology: LDMOS Supplier Device Package: H-34288-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 1.85 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PTFA192001E1V4R250XTMA1 | Infineon Technologies |
Description: IC RF POWER TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTFA192001E1V4XWSA1 | Infineon Technologies |
Description: FET RF 65V 1.99GHZ H-36260-2 Packaging: Tray Package / Case: H-36260-2 Mounting Type: Chassis Mount Frequency: 1.99GHz Power - Output: 50W Gain: 15.9dB Technology: LDMOS Supplier Device Package: H-36260-2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 1.8 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PTFA212001F1V4R250XTMA1 | Infineon Technologies | Description: IC RF POWER TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFA212001F1V4XWSA1 | Infineon Technologies | Description: IC RF POWER TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB082817FHV1R250XTMA1 | Infineon Technologies |
Description: IC FET RF LDMOS H-34288 Packaging: Tape & Reel (TR) Package / Case: 2-Flatpack, Fin Leads, Flanged Mounting Type: Surface Mount Frequency: 821MHz Power - Output: 60W Gain: 19.3dB Technology: LDMOS Supplier Device Package: H-34288-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 2.15 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB082817FHV1S250XTMA1 | Infineon Technologies |
Description: IC FET RF LDMOS H-34288 Packaging: Tape & Reel (TR) Package / Case: 2-Flatpack, Fin Leads, Flanged Mounting Type: Surface Mount Frequency: 821MHz Power - Output: 60W Gain: 19.3dB Technology: LDMOS Supplier Device Package: H-34288-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 2.15 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB082817FHV1XWSA1 | Infineon Technologies |
Description: IC FET RF LDMOS H-34288 Packaging: Tray Package / Case: 2-Flatpack, Fin Leads, Flanged Mounting Type: Surface Mount Frequency: 821MHz Power - Output: 60W Gain: 19.3dB Technology: LDMOS Supplier Device Package: H-34288-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 2.15 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB093608FVV2S250XTMA1 | Infineon Technologies | Description: IC FET RF LDMOS H-362620-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB192557SHV1R250XTMA1 | Infineon Technologies |
Description: IC FET RF LDMOS H-34288G-4/2 Packaging: Tape & Reel (TR) Package / Case: H-34288G-4/2 Mounting Type: Chassis Mount Frequency: 1.99GHz Power - Output: 60W Gain: 19dB Technology: LDMOS Supplier Device Package: H-34288G-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 1.35 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB192557SHV1XWSA1 | Infineon Technologies |
Description: IC FET RF LDMOS H-34288G-4/2 Packaging: Tray Package / Case: H-34288G-4/2 Mounting Type: Chassis Mount Frequency: 1.99GHz Power - Output: 60W Gain: 19dB Technology: LDMOS Supplier Device Package: H-34288G-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 1.35 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB193408SVV1R250XTMA1 | Infineon Technologies |
Description: IC FET RF LDMOS H-34275G-6/2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB193408SVV1XWSA1 | Infineon Technologies |
Description: IC FET RF LDMOS H-34275G-6/2 Packaging: Tray Package / Case: H-34275G-6/2 Mounting Type: Chassis Mount Frequency: 1.99GHz Configuration: Dual, Common Source Power - Output: 80W Gain: 19dB Technology: LDMOS Supplier Device Package: H-34275G-6/2 Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 2.65 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB260605ELV1R250XTMA1 | Infineon Technologies |
Description: IC FET RF LDMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB260605ELV1XWSA1 | Infineon Technologies |
Description: IC FET RF LDMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PTFB262406EV1XWSA1 | Infineon Technologies | Description: IC FET RF LDMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PXAC261202FCV1R250XTMA1 | Infineon Technologies |
Description: FET RF 2CH 65V 2.61GHZ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PXAC261202FCV1S250XTMA1 | Infineon Technologies |
Description: FET RF 2CH 65V 2.61GHZ Packaging: Tape & Reel (TR) Package / Case: H-37248-4 Mounting Type: Chassis Mount Frequency: 2.61GHz Configuration: Dual, Common Source Power - Output: 28W Gain: 13.5dB Technology: LDMOS Supplier Device Package: H-37248-4 Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 230 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PXAC261202FCV1XWSA1 | Infineon Technologies |
Description: FET RF 2CH 65V 2.61GHZ Packaging: Tray Package / Case: H-37248-4 Mounting Type: Chassis Mount Frequency: 2.61GHz Configuration: Dual, Common Source Power - Output: 28W Gain: 13.5dB Technology: LDMOS Supplier Device Package: H-37248-4 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 230 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BTS6480SFXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 3:4 DSO-36 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IGC18T120T8QX1SA1 | Infineon Technologies |
Description: IGBT 1200V 15A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG8CH37K10F | Infineon Technologies |
Description: IGBT 1200V 100A DIE Packaging: Bulk Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Td (on/off) @ 25°C: 35ns/190ns Test Condition: 600V, 35A, 5Ohm, 15V Gate Charge: 210 nC Part Status: Discontinued at Digi-Key Voltage - Collector Emitter Breakdown (Max): 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG8CH97K10F | Infineon Technologies |
Description: IGBT 1200V 100A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SIGC158T120R3LEX1SA2 | Infineon Technologies |
Description: IGBT 1200V 150A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A Supplier Device Package: Die IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 450 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IRG7CH28UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH28UEF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A Supplier Device Package: Die Td (on/off) @ 25°C: 35ns/225ns Test Condition: 600V, 15A, 22Ohm, 15V Gate Charge: 60 nC Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH35UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH35UEF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH42UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH42UEF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH46UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH46UEF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH50UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH50UEF | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH54K10EF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH73K10EF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH73K10EF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A Supplier Device Package: Die Td (on/off) @ 25°C: 105ns/45ns Test Condition: 600V, 75A, 5Ohm, 15V Gate Charge: 420 nC Voltage - Collector Emitter Breakdown (Max): 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH73UED-R | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH73UEF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: Die Td (on/off) @ 25°C: 90ns/580ns Test Condition: 600V, 75A, 5Ohm, 15V Gate Charge: 540 nC Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH75K10EF | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH75K10EF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH75UED-R | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH75UEF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH81K10EF | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IRG7CH81K10EF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IRG7PH35U-EPBF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST TO247 Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRG7PH42UD-EPBF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST TO247 Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRG7PH50U-EP | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: PG-TO247AD IGBT Type: Trench Td (on/off) @ 25°C: 35ns/430ns Switching Energy: 4.6mJ (on), 3.2mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 440 nC Part Status: Obsolete Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 556 W |
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В кошику од. на суму грн. |
| CY7C1380KV33-167BZI |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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| CY7C1381KV33-100BZXI |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 272 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2172.42 грн |
| 10+ | 1856.42 грн |
| 25+ | 1788.10 грн |
| CY7C1381KV33-133AXC |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2584.09 грн |
| 10+ | 2340.06 грн |
| 25+ | 2258.82 грн |
| 72+ | 2052.81 грн |
| 144+ | 1807.05 грн |
| CY7C1381KV33-133AXI |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 422 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2543.78 грн |
| 10+ | 2266.22 грн |
| 25+ | 2193.51 грн |
| 72+ | 1980.87 грн |
| 144+ | 1930.90 грн |
| 288+ | 1881.83 грн |
| CY7C1383KV33-133AXC |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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| CY7C1386KV33-167AXC |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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| MCETOOLV1 |
|
Виробник: Infineon Technologies
Description: DEVELOPMENT KIT FOR 100-SERIES,
Packaging: Box
Type: Debugger, Programmer (In-Circuit/In-System)
Contents: Board(s), Cable(s)
Utilized IC / Part: IRMCFxxx, IRMCKxxx
Description: DEVELOPMENT KIT FOR 100-SERIES,
Packaging: Box
Type: Debugger, Programmer (In-Circuit/In-System)
Contents: Board(s), Cable(s)
Utilized IC / Part: IRMCFxxx, IRMCKxxx
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| IRF60R217 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
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| IRL60S216 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
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| IRF60R217 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
на замовлення 204 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.37 грн |
| 10+ | 83.25 грн |
| 100+ | 56.04 грн |
| IRL60S216 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
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| PTFA092213FLV5R250XTMA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288-6
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
Description: IC FET RF LDMOS H-34288-6
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
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| PTFA092213FLV5XWSA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288-4/2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
Description: IC FET RF LDMOS H-34288-4/2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
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| PTFA192001E1V4R250XTMA1 |
|
Виробник: Infineon Technologies
Description: IC RF POWER TRANSISTOR
Description: IC RF POWER TRANSISTOR
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| PTFA192001E1V4XWSA1 |
|
Виробник: Infineon Technologies
Description: FET RF 65V 1.99GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 50W
Gain: 15.9dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.8 A
Description: FET RF 65V 1.99GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 50W
Gain: 15.9dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.8 A
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| PTFA212001F1V4R250XTMA1 |
Виробник: Infineon Technologies
Description: IC RF POWER TRANSISTOR
Description: IC RF POWER TRANSISTOR
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| PTFA212001F1V4XWSA1 |
Виробник: Infineon Technologies
Description: IC RF POWER TRANSISTOR
Description: IC RF POWER TRANSISTOR
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| PTFB082817FHV1R250XTMA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
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| PTFB082817FHV1S250XTMA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
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| PTFB082817FHV1XWSA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Description: IC FET RF LDMOS H-34288
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
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| PTFB093608FVV2S250XTMA1 |
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-362620-2
Description: IC FET RF LDMOS H-362620-2
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| PTFB192557SHV1R250XTMA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tape & Reel (TR)
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tape & Reel (TR)
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
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| PTFB192557SHV1XWSA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tray
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tray
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
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| PTFB193408SVV1R250XTMA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34275G-6/2
Description: IC FET RF LDMOS H-34275G-6/2
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| PTFB193408SVV1XWSA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34275G-6/2
Packaging: Tray
Package / Case: H-34275G-6/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Configuration: Dual, Common Source
Power - Output: 80W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34275G-6/2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 2.65 A
Description: IC FET RF LDMOS H-34275G-6/2
Packaging: Tray
Package / Case: H-34275G-6/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Configuration: Dual, Common Source
Power - Output: 80W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34275G-6/2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 2.65 A
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| PTFB260605ELV1R250XTMA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS
Description: IC FET RF LDMOS
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| PTFB260605ELV1XWSA1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS
Description: IC FET RF LDMOS
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| PTFB262406EV1XWSA1 |
Виробник: Infineon Technologies
Description: IC FET RF LDMOS
Description: IC FET RF LDMOS
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| PXAC261202FCV1R250XTMA1 |
|
Виробник: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Description: FET RF 2CH 65V 2.61GHZ
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| PXAC261202FCV1S250XTMA1 |
|
Виробник: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tape & Reel (TR)
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tape & Reel (TR)
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
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| PXAC261202FCV1XWSA1 |
|
Виробник: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tray
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tray
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
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| BTS6480SFXUMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
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| IGC18T120T8QX1SA1 |
|
Виробник: Infineon Technologies
Description: IGBT 1200V 15A DIE
Description: IGBT 1200V 15A DIE
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| IRG8CH37K10F |
|
Виробник: Infineon Technologies
Description: IGBT 1200V 100A DIE
Packaging: Bulk
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Td (on/off) @ 25°C: 35ns/190ns
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Discontinued at Digi-Key
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT 1200V 100A DIE
Packaging: Bulk
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Td (on/off) @ 25°C: 35ns/190ns
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Discontinued at Digi-Key
Voltage - Collector Emitter Breakdown (Max): 1200 V
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| IRG8CH97K10F |
|
Виробник: Infineon Technologies
Description: IGBT 1200V 100A DIE
Description: IGBT 1200V 100A DIE
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| SIGC158T120R3LEX1SA2 |
|
Виробник: Infineon Technologies
Description: IGBT 1200V 150A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 450 A
Description: IGBT 1200V 150A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 450 A
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| IRG7CH28UED |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH28UEF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A
Supplier Device Package: Die
Td (on/off) @ 25°C: 35ns/225ns
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A
Supplier Device Package: Die
Td (on/off) @ 25°C: 35ns/225ns
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
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| IRG7CH35UED |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH35UEF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH42UED |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH42UEF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH46UED |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH46UEF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Part Status: Obsolete
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Part Status: Obsolete
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| IRG7CH50UED |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH50UEF |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH54K10EF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH73K10EF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH73K10EF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
Supplier Device Package: Die
Td (on/off) @ 25°C: 105ns/45ns
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 420 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
Supplier Device Package: Die
Td (on/off) @ 25°C: 105ns/45ns
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 420 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
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| IRG7CH73UED-R |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH73UEF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: Die
Td (on/off) @ 25°C: 90ns/580ns
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 540 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: Die
Td (on/off) @ 25°C: 90ns/580ns
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 540 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
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| IRG7CH75K10EF |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH75K10EF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH75UED-R |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH75UEF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH81K10EF |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7CH81K10EF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
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| IRG7PH35U-EPBF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Part Status: Obsolete
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Part Status: Obsolete
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| IRG7PH42UD-EPBF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Part Status: Obsolete
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Part Status: Obsolete
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| IRG7PH50U-EP |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 4.6mJ (on), 3.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 556 W
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 4.6mJ (on), 3.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 556 W
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