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BCX5116H6327XTSA1 BCX5116H6327XTSA1 Infineon Technologies Infineon-BCX51_BCX52_BCX53-DS-v01_01-en.pdf?fileId=db3a3043156fd573011589c08423034d Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
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BCX5610H6327XTSA1 BCX5610H6327XTSA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: AEC-Q101
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BF886H6327XTSA1 Infineon Technologies Description: MOSFET N-CH RF 12V 30MA SOT-343
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BFR843EL3E6327XTSA1 BFR843EL3E6327XTSA1 Infineon Technologies Infineon-BFR843EL3-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389715764ed1 Description: RF TRANS NPN 2.6V PG TSLP-3-10
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 25.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
Supplier Device Package: PG-TSLP-3-10
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BGA6H1BN6E6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP TSNP-6
Packaging: Tape & Reel (TR)
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BGA711N7E6327XTSA1 BGA711N7E6327XTSA1 Infineon Technologies BGA711N7.pdf Description: IC AMP 1.8GHZ-2.7GHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2.7GHz
Voltage - Supply: 3.6V
Gain: 17dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -8dBm
Supplier Device Package: PG-TSNP-7-1
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BGA713N7E6327XTSA1 BGA713N7E6327XTSA1 Infineon Technologies Infineon-BGA713N7-DS-v03_01-en.pdf?fileId=db3a30433db6f09f013dcac8bc2f5457 Description: IC AMP UMTS 700/800MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz, 800MHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 15.9dB
Current - Supply: 4.8mA
Noise Figure: 1.1dB
P1dB: -12dBm
Supplier Device Package: TSNP-7-1
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BGA7H1N6E6327XTSA1 BGA7H1N6E6327XTSA1 Infineon Technologies Infineon-BGA7H1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e45ad9af02ca Description: IC AMP LTE 2.3GHZ-2.69GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 12.5dB
Current - Supply: 4.7mA
Noise Figure: 0.6dB
P1dB: -8dBm
Supplier Device Package: PG-TSNP-6-2
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
15000+28.28 грн
Мінімальне замовлення: 15000
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BGA7L1N6E6327XTSA1 BGA7L1N6E6327XTSA1 Infineon Technologies Infineon-BGA7L1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e46b396d02e6 Description: IC AMP LTE 728MHZ-960MHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 728MHz ~ 960MHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13.3dB
Current - Supply: 4.4mA
Noise Figure: 0.9dB
P1dB: -10dBm
Supplier Device Package: PG-TSNP-6-2
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BGA7M1N6E6327XTSA1 BGA7M1N6E6327XTSA1 Infineon Technologies Infineon-BGA7M1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e46550b502d7 Description: IC AMP LTE 1.8GHZ-2.2GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.4mA
Noise Figure: 0.6dB
P1dB: -7dBm
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
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BGF153E6327XTSA1 BGF153E6327XTSA1 Infineon Technologies SG-WLL-2-1.pdf Description: TVS DIODE WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Part Status: Obsolete
Supplier Device Package: SG-WLL-2-1
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BGM15LA12E6327XTSA1 BGM15LA12E6327XTSA1 Infineon Technologies INFN-S-A0001299616-1.pdf?t.download=true&u=5oefqw Description: IC AMP LTE 700MHZ-1GHZ 12ATSLP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 1GHz
RF Type: LTE, W-CDMA
Voltage - Supply: 2.2V ~ 3.3V
Gain: 17.3dB
Current - Supply: 4.9mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 925MHz ~ 960MHz
Supplier Device Package: ATSLP-12-3
Part Status: Last Time Buy
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BGM7LLHM4L12E6327XTSA1 Infineon Technologies LTE_Low_Noise_Amplifiers_Br.pdf Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Tape & Reel (TR)
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
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BGM7LLMM4L12E6327XTSA1 Infineon Technologies Description: IC AMP MMIC 12ATSLP
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BGM7LMHM4L12E6327XTSA1 BGM7LMHM4L12E6327XTSA1 Infineon Technologies LTE_Low_Noise_Amplifiers_Br.pdf Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
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BGM7MHLL4L12E6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC RF AMP MMIC 12ATSLP
Packaging: Tape & Reel (TR)
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BGM7MMLL4L12E6327XTSA1 Infineon Technologies Description: IC AMP MMIC 12ATSLP
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BGS110MN20E6327XTSA1 BGS110MN20E6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC RF SWITCH SP10T 2.7GHZ TSNP20
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Impedance: 50Ohm
Circuit: SP10T
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Insertion Loss: 0.6dB
Frequency Range: 100MHz ~ 2.7GHz
Test Frequency: 2.7GHz
Supplier Device Package: PG-TSNP-20-1
Part Status: Obsolete
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BGS1414MN20E6327XTSA1 BGS1414MN20E6327XTSA1 Infineon Technologies Description: IC SWITCH RF 20TSNP
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BGS1515MN20E6327XTSA1 BGS1515MN20E6327XTSA1 Infineon Technologies Description: IC SWITCH RF 20TSNP
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BGS15MA12E6327XTSA1 BGS15MA12E6327XTSA1 Infineon Technologies BGS15MA12.pdf Description: IC RF SWITCH SP5T 2.9GHZ ATSLP12
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: WCDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Insertion Loss: 0.45dB
Frequency Range: 100MHz ~ 2.9GHz
P1dB: 30dBm
Test Frequency: 2.5GHz
Isolation: 25dB
Supplier Device Package: ATSLP-12-4
Part Status: Obsolete
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BGS16MN14E6327XTSA1 BGS16MN14E6327XTSA1 Infineon Technologies BGS16MN14_v3+0.pdf?fileId=5546d46146d18cb40147207a5e3f02a2 Description: IC RF SWITCH SP6T 2.7GHZ 14TSNP
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BGS18MN14E6327XTSA1 BGS18MN14E6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF SWITCH SP8T 2.7GHZ TSNP14
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP8T
RF Type: LTE, W-CDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Insertion Loss: 0.8dB
Frequency Range: 100MHz ~ 2.7GHz
Test Frequency: 2GHz
Isolation: 29dB
Supplier Device Package: PG-TSNP-14-3
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BGSA12GN10E6327XTSA1 BGSA12GN10E6327XTSA1 Infineon Technologies Infineon_AntennaTuningSolutions_2014-06.pdf?fileId=5546d461464245d301468a636c8c6598 Description: IC RF SWITCH SPDT 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.39dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Part Status: Active
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BGSA13GN10E6327XTSA1 BGSA13GN10E6327XTSA1 Infineon Technologies Infineon-Antenna_aperture_tuning-PB-v01_00-EN.pdf?fileId=5546d4624fb7fef2014ffed642a54caf Description: IC RF SWITCH SP3T 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP3T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.63dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 17dB
Supplier Device Package: PG-TSNP-10-1
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BGSF110GN26E6327XTSA1 BGSF110GN26E6327XTSA1 Infineon Technologies Infineon-BGSF110GN26-DS-v01_03-en.pdf?fileId=db3a30433ea3aef6013ea848e89e07b1 Description: IC RF SWITCH SP10T 3.8GHZ TSNP26
Packaging: Tape & Reel (TR)
Package / Case: 26-WFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP10T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.3V
Insertion Loss: 1.3dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3GHz
Isolation: 40dB
Supplier Device Package: PG-TSNP-26-2
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BGSX22GN10E6327XTSA1 BGSX22GN10E6327XTSA1 Infineon Technologies Infineon-RF+Front+End+Solutions+for+Mobile+Applications-BC-v01_00-EN.pdf?fileId=5546d46254e133b401552f350ee3697c Description: IC RF SWITCH DPDT TSNP10-1
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BGT70E6327XTSA1 Infineon Technologies Infineon-SMT_Ready_E_Band_Radio_Frontend_Design-PB-v01_00-EN.pdf?fileId=5546d4624d6fc3d5014dd79f3a6649e6 Description: IC RF TXRX CELLULAR 119WFBGA
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BGT80E6327XTSA1 BGT80E6327XTSA1 Infineon Technologies BGT70_BGT80-70_80GHz_Radar_PB.pdf?fileId=db3a30433de4e67f013df36d4ad467b1 Description: IC RF TXRX CELLULAR 119WFWLB
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 71GHz ~ 86GHz
Type: TxRx Only
Voltage - Supply: 12V
Power - Output: 12dBm
Protocol: LTE, WiMax
Supplier Device Package: PG-WFWLB-119-1
GPIO: 24
Modulation: QPSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
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BSC010N04LSIATMA1 BSC010N04LSIATMA1 Infineon Technologies Infineon-BSC010N04LSI-DS-v02_01-en.pdf?fileId=db3a3043353fdc16013552d84dc147dc Description: MOSFET N-CH 40V 37A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+82.01 грн
Мінімальне замовлення: 5000
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BSC019N04LSATMA1 BSC019N04LSATMA1 Infineon Technologies Infineon-BSC019N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424b8aca0c6fc4 Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+40.79 грн
Мінімальне замовлення: 5000
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BSC026N04LSATMA1 BSC026N04LSATMA1 Infineon Technologies Infineon-BSC026N04LS-DS-v02_00-en.pdf?fileId=db3a3043410d6ee40141127f49e92b5d Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
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BSC026N08NS5ATMA1 BSC026N08NS5ATMA1 Infineon Technologies Infineon-BSC026N08NS5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014ae2eace7629e0 Description: MOSFET N-CH 80V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+103.59 грн
Мінімальне замовлення: 5000
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BSC026NE2LS5ATMA1 BSC026NE2LS5ATMA1 Infineon Technologies Infineon-BSC026NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c0950eede22f3 Description: MOSFET N-CH 25V 24A/82A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+29.71 грн
Мінімальне замовлення: 5000
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BSC030N08NS5ATMA1 BSC030N08NS5ATMA1 Infineon Technologies Infineon-BSC030N08NS5-DS-v02_02-EN.pdf?fileId=5546d4624ad04ef9014aed52f4210acf Description: MOSFET N-CH 80V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC032N04LSATMA1 BSC032N04LSATMA1 Infineon Technologies Infineon-BSC032N04LS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424bc4f341701d Description: MOSFET N-CH 40V 21A/98A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+26.47 грн
10000+22.75 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC034N06NSATMA1 BSC034N06NSATMA1 Infineon Technologies Infineon-BSC034N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c65286a70be Description: MOSFET N-CH 60V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 41µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+54.49 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC037N08NS5ATMA1 BSC037N08NS5ATMA1 Infineon Technologies Infineon-BSC037N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae9ad3b8e1c33 Description: MOSFET N-CH 80V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+72.84 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC040N08NS5ATMA1 BSC040N08NS5ATMA1 Infineon Technologies Infineon-BSC040N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3065a7e2a05 Description: MOSFET N-CH 80V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 67µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+59.38 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 Infineon Technologies Infineon-BSC040N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fbcee2e6b38 Description: MOSFET N-CH 100V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+58.60 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC066N06NSATMA1 BSC066N06NSATMA1 Infineon Technologies Infineon-BSC066N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c7d40ef70ec Description: MOSFET N-CH 60V 64A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
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BSC072N08NS5ATMA1 BSC072N08NS5ATMA1 Infineon Technologies Infineon-BSC072N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3d8e8192c7c Description: MOSFET N-CH 80V 74A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5000+52.01 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC079N03LSCGATMA1 BSC079N03LSCGATMA1 Infineon Technologies BSC079N03LSCG.pdf Description: MOSFET N-CH 30V 14A/50A TDSON
товару немає в наявності
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BSC0921NDIATMA1 BSC0921NDIATMA1 Infineon Technologies Infineon-BSC0921NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ca6892d00036 Description: MOSFET 2N-CH 30V 17A/31A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+39.68 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC0923NDIATMA1 BSC0923NDIATMA1 Infineon Technologies Infineon-BSC0923NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136caa90c9e00b6 Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
товару немає в наявності
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BSC0924NDIATMA1 BSC0924NDIATMA1 Infineon Technologies Infineon-BSC0924NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceae245448f5 Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
5000+27.96 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC098N10NS5ATMA1 BSC098N10NS5ATMA1 Infineon Technologies Infineon-BSC098N10NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae95ab4221bfd Description: MOSFET N-CH 100V 60A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+37.84 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC110N15NS5ATMA1 BSC110N15NS5ATMA1 Infineon Technologies Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a Description: MOSFET N-CH 150V 76A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+87.97 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 Infineon Technologies Infineon-BSC117N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae97632721c1b Description: MOSFET N-CH 80V 49A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5000+36.67 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC882N03LSGATMA1 BSC882N03LSGATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 34V 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
товару немає в наявності
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BSD314SPEH6327XTSA1 BSD314SPEH6327XTSA1 Infineon Technologies Infineon-BSD314SPE-DS-v02_04-en.pdf?fileId=db3a3043321e49940132482ca5c6248a Description: MOSFET P-CH 30V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT363-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
товару немає в наявності
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BSD816SNH6327XTSA1 Infineon Technologies Infineon-BSD816SN-DS-v02_05-en.pdf?fileId=db3a30431b0626df011b12af48627bf1 Description: MOSFET N-CH 20V 1.4A SOT363
товару немає в наявності
В кошику  од. на суму  грн.
BSF035NE2LQXUMA1 BSF035NE2LQXUMA1 Infineon Technologies Infineon-BSF035NE2LQ-DS-v01_03-en.pdf?fileId=db3a30433f764301013f7fe8a925463c Description: MOSFET N-CH 25V 22A/69A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 12 V
товару немає в наявності
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BSG0811NDATMA1 BSG0811NDATMA1 Infineon Technologies Infineon-BSG0811ND-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c2d01f1490263 Description: MOSFET 2N-CH 25V 19A/41A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 41A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
товару немає в наявності
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BSG0813NDIATMA1 BSG0813NDIATMA1 Infineon Technologies Infineon-BSG0813NDI-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c2d01f8520266 Description: MOSFET 2N-CH 25V 19A/33A 8TISON
товару немає в наявності
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BSL202SNH6327XTSA1 BSL202SNH6327XTSA1 Infineon Technologies Infineon-BSL202SN-DS-v02_00-en.pdf?fileId=db3a3043156fd573011622e191d41f68 Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Qualification: AEC-Q101
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BSL205NH6327XTSA1 BSL205NH6327XTSA1 Infineon Technologies BSL205N.pdf Description: MOSFET 2N-CH 20V 2.5A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Qualification: AEC-Q101
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BSL207NH6327XTSA1 BSL207NH6327XTSA1 Infineon Technologies BSL207N.pdf Description: MOSFET 2N-CH 20V 2.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP-6-1
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
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BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 Infineon Technologies Infineon-BSL207SP-DS-v02_05-en.pdf?fileId=db3a304342c787030142d8004cc24f74 Description: MOSFET P-CH 20V 6A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 15 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+17.42 грн
6000+15.51 грн
9000+14.84 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 Infineon Technologies Infineon-BSL211SP-DS-v02_00-en.pdf?fileId=db3a304342c787030142db9dab0e1414 Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
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BCX5116H6327XTSA1 Infineon-BCX51_BCX52_BCX53-DS-v01_01-en.pdf?fileId=db3a3043156fd573011589c08423034d
BCX5116H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
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BCX5610H6327XTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX5610H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: AEC-Q101
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BF886H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH RF 12V 30MA SOT-343
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BFR843EL3E6327XTSA1 Infineon-BFR843EL3-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389715764ed1
BFR843EL3E6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 2.6V PG TSLP-3-10
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 25.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
Supplier Device Package: PG-TSLP-3-10
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BGA6H1BN6E6327XTSA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IC RF AMP TSNP-6
Packaging: Tape & Reel (TR)
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BGA711N7E6327XTSA1 BGA711N7.pdf
BGA711N7E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP 1.8GHZ-2.7GHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2.7GHz
Voltage - Supply: 3.6V
Gain: 17dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -8dBm
Supplier Device Package: PG-TSNP-7-1
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BGA713N7E6327XTSA1 Infineon-BGA713N7-DS-v03_01-en.pdf?fileId=db3a30433db6f09f013dcac8bc2f5457
BGA713N7E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP UMTS 700/800MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz, 800MHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 15.9dB
Current - Supply: 4.8mA
Noise Figure: 1.1dB
P1dB: -12dBm
Supplier Device Package: TSNP-7-1
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BGA7H1N6E6327XTSA1 Infineon-BGA7H1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e45ad9af02ca
BGA7H1N6E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP LTE 2.3GHZ-2.69GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 12.5dB
Current - Supply: 4.7mA
Noise Figure: 0.6dB
P1dB: -8dBm
Supplier Device Package: PG-TSNP-6-2
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+28.28 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BGA7L1N6E6327XTSA1 Infineon-BGA7L1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e46b396d02e6
BGA7L1N6E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP LTE 728MHZ-960MHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 728MHz ~ 960MHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13.3dB
Current - Supply: 4.4mA
Noise Figure: 0.9dB
P1dB: -10dBm
Supplier Device Package: PG-TSNP-6-2
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BGA7M1N6E6327XTSA1 Infineon-BGA7M1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e46550b502d7
BGA7M1N6E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP LTE 1.8GHZ-2.2GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.4mA
Noise Figure: 0.6dB
P1dB: -7dBm
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
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BGF153E6327XTSA1 SG-WLL-2-1.pdf
BGF153E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Part Status: Obsolete
Supplier Device Package: SG-WLL-2-1
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BGM15LA12E6327XTSA1 INFN-S-A0001299616-1.pdf?t.download=true&u=5oefqw
BGM15LA12E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP LTE 700MHZ-1GHZ 12ATSLP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 1GHz
RF Type: LTE, W-CDMA
Voltage - Supply: 2.2V ~ 3.3V
Gain: 17.3dB
Current - Supply: 4.9mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 925MHz ~ 960MHz
Supplier Device Package: ATSLP-12-3
Part Status: Last Time Buy
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BGM7LLHM4L12E6327XTSA1 LTE_Low_Noise_Amplifiers_Br.pdf
Виробник: Infineon Technologies
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Tape & Reel (TR)
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
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BGM7LLMM4L12E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP MMIC 12ATSLP
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BGM7LMHM4L12E6327XTSA1 LTE_Low_Noise_Amplifiers_Br.pdf
BGM7LMHM4L12E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
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BGM7MHLL4L12E6327XTSA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC RF AMP MMIC 12ATSLP
Packaging: Tape & Reel (TR)
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BGM7MMLL4L12E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP MMIC 12ATSLP
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BGS110MN20E6327XTSA1 Part_Number_Guide_Web.pdf
BGS110MN20E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP10T 2.7GHZ TSNP20
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Impedance: 50Ohm
Circuit: SP10T
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Insertion Loss: 0.6dB
Frequency Range: 100MHz ~ 2.7GHz
Test Frequency: 2.7GHz
Supplier Device Package: PG-TSNP-20-1
Part Status: Obsolete
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BGS1414MN20E6327XTSA1
BGS1414MN20E6327XTSA1
Виробник: Infineon Technologies
Description: IC SWITCH RF 20TSNP
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BGS1515MN20E6327XTSA1
BGS1515MN20E6327XTSA1
Виробник: Infineon Technologies
Description: IC SWITCH RF 20TSNP
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BGS15MA12E6327XTSA1 BGS15MA12.pdf
BGS15MA12E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP5T 2.9GHZ ATSLP12
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: WCDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Insertion Loss: 0.45dB
Frequency Range: 100MHz ~ 2.9GHz
P1dB: 30dBm
Test Frequency: 2.5GHz
Isolation: 25dB
Supplier Device Package: ATSLP-12-4
Part Status: Obsolete
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BGS16MN14E6327XTSA1 BGS16MN14_v3+0.pdf?fileId=5546d46146d18cb40147207a5e3f02a2
BGS16MN14E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP6T 2.7GHZ 14TSNP
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BGS18MN14E6327XTSA1 fundamentals-of-power-semiconductors
BGS18MN14E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP8T 2.7GHZ TSNP14
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP8T
RF Type: LTE, W-CDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Insertion Loss: 0.8dB
Frequency Range: 100MHz ~ 2.7GHz
Test Frequency: 2GHz
Isolation: 29dB
Supplier Device Package: PG-TSNP-14-3
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BGSA12GN10E6327XTSA1 Infineon_AntennaTuningSolutions_2014-06.pdf?fileId=5546d461464245d301468a636c8c6598
BGSA12GN10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.39dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Part Status: Active
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BGSA13GN10E6327XTSA1 Infineon-Antenna_aperture_tuning-PB-v01_00-EN.pdf?fileId=5546d4624fb7fef2014ffed642a54caf
BGSA13GN10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP3T 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP3T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.63dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 17dB
Supplier Device Package: PG-TSNP-10-1
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BGSF110GN26E6327XTSA1 Infineon-BGSF110GN26-DS-v01_03-en.pdf?fileId=db3a30433ea3aef6013ea848e89e07b1
BGSF110GN26E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP10T 3.8GHZ TSNP26
Packaging: Tape & Reel (TR)
Package / Case: 26-WFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP10T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.3V
Insertion Loss: 1.3dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3GHz
Isolation: 40dB
Supplier Device Package: PG-TSNP-26-2
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BGSX22GN10E6327XTSA1 Infineon-RF+Front+End+Solutions+for+Mobile+Applications-BC-v01_00-EN.pdf?fileId=5546d46254e133b401552f350ee3697c
BGSX22GN10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH DPDT TSNP10-1
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BGT70E6327XTSA1 Infineon-SMT_Ready_E_Band_Radio_Frontend_Design-PB-v01_00-EN.pdf?fileId=5546d4624d6fc3d5014dd79f3a6649e6
Виробник: Infineon Technologies
Description: IC RF TXRX CELLULAR 119WFBGA
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BGT80E6327XTSA1 BGT70_BGT80-70_80GHz_Radar_PB.pdf?fileId=db3a30433de4e67f013df36d4ad467b1
BGT80E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF TXRX CELLULAR 119WFWLB
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 71GHz ~ 86GHz
Type: TxRx Only
Voltage - Supply: 12V
Power - Output: 12dBm
Protocol: LTE, WiMax
Supplier Device Package: PG-WFWLB-119-1
GPIO: 24
Modulation: QPSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
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BSC010N04LSIATMA1 Infineon-BSC010N04LSI-DS-v02_01-en.pdf?fileId=db3a3043353fdc16013552d84dc147dc
BSC010N04LSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 37A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+82.01 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC019N04LSATMA1 Infineon-BSC019N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424b8aca0c6fc4
BSC019N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+40.79 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC026N04LSATMA1 Infineon-BSC026N04LS-DS-v02_00-en.pdf?fileId=db3a3043410d6ee40141127f49e92b5d
BSC026N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC026N08NS5ATMA1 Infineon-BSC026N08NS5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014ae2eace7629e0
BSC026N08NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+103.59 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC026NE2LS5ATMA1 Infineon-BSC026NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c0950eede22f3
BSC026NE2LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A/82A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+29.71 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC030N08NS5ATMA1 Infineon-BSC030N08NS5-DS-v02_02-EN.pdf?fileId=5546d4624ad04ef9014aed52f4210acf
BSC030N08NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC032N04LSATMA1 Infineon-BSC032N04LS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424bc4f341701d
BSC032N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 21A/98A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+26.47 грн
10000+22.75 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC034N06NSATMA1 Infineon-BSC034N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c65286a70be
BSC034N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 41µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+54.49 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC037N08NS5ATMA1 Infineon-BSC037N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae9ad3b8e1c33
BSC037N08NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+72.84 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC040N08NS5ATMA1 Infineon-BSC040N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3065a7e2a05
BSC040N08NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 67µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+59.38 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC040N10NS5ATMA1 Infineon-BSC040N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fbcee2e6b38
BSC040N10NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+58.60 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC066N06NSATMA1 Infineon-BSC066N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c7d40ef70ec
BSC066N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 64A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC072N08NS5ATMA1 Infineon-BSC072N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3d8e8192c7c
BSC072N08NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 74A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+52.01 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC079N03LSCGATMA1 BSC079N03LSCG.pdf
BSC079N03LSCGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/50A TDSON
товару немає в наявності
В кошику  од. на суму  грн.
BSC0921NDIATMA1 Infineon-BSC0921NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ca6892d00036
BSC0921NDIATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/31A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+39.68 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC0923NDIATMA1 Infineon-BSC0923NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136caa90c9e00b6
BSC0923NDIATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BSC0924NDIATMA1 Infineon-BSC0924NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceae245448f5
BSC0924NDIATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+27.96 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC098N10NS5ATMA1 Infineon-BSC098N10NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae95ab4221bfd
BSC098N10NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 60A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+37.84 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC110N15NS5ATMA1 Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a
BSC110N15NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 76A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+87.97 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC117N08NS5ATMA1 Infineon-BSC117N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae97632721c1b
BSC117N08NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 49A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+36.67 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC882N03LSGATMA1 fundamentals-of-power-semiconductors
BSC882N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
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BSD314SPEH6327XTSA1 Infineon-BSD314SPE-DS-v02_04-en.pdf?fileId=db3a3043321e49940132482ca5c6248a
BSD314SPEH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT363-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
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BSD816SNH6327XTSA1 Infineon-BSD816SN-DS-v02_05-en.pdf?fileId=db3a30431b0626df011b12af48627bf1
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 1.4A SOT363
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BSF035NE2LQXUMA1 Infineon-BSF035NE2LQ-DS-v01_03-en.pdf?fileId=db3a30433f764301013f7fe8a925463c
BSF035NE2LQXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 22A/69A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 12 V
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BSG0811NDATMA1 Infineon-BSG0811ND-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c2d01f1490263
BSG0811NDATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/41A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 41A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
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BSG0813NDIATMA1 Infineon-BSG0813NDI-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c2d01f8520266
BSG0813NDIATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/33A 8TISON
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BSL202SNH6327XTSA1 Infineon-BSL202SN-DS-v02_00-en.pdf?fileId=db3a3043156fd573011622e191d41f68
BSL202SNH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Qualification: AEC-Q101
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BSL205NH6327XTSA1 BSL205N.pdf
BSL205NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.5A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Qualification: AEC-Q101
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BSL207NH6327XTSA1 BSL207N.pdf
BSL207NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP-6-1
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
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BSL207SPH6327XTSA1 Infineon-BSL207SP-DS-v02_05-en.pdf?fileId=db3a304342c787030142d8004cc24f74
BSL207SPH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 15 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.42 грн
6000+15.51 грн
9000+14.84 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSL211SPH6327XTSA1 Infineon-BSL211SP-DS-v02_00-en.pdf?fileId=db3a304342c787030142db9dab0e1414
BSL211SPH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
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