Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119555) > Сторінка 265 з 1993

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IPP030N10N5AKSA1 IPP030N10N5AKSA1 Infineon Technologies Infineon-IPP030N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49 Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
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IPP052N08N5AKSA1 IPP052N08N5AKSA1 Infineon Technologies Infineon-IPP052N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014adebbb6487b7d Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 66µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 40 V
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IPP083N10N5AKSA1 IPP083N10N5AKSA1 Infineon Technologies Infineon-IPP083N10N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac56a3779202b Description: MOSFET N-CH 100V 73A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
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IPP120N10S403AKSA1 IPP120N10S403AKSA1 Infineon Technologies IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Qualification: AEC-Q101
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IPP120P04P404AKSA1 IPP120P04P404AKSA1 Infineon Technologies IPx120P04P4-04.pdf Description: MOSFET P-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
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IPP65R095C7XKSA1 IPP65R095C7XKSA1 Infineon Technologies Infineon-IPP65R095C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd014209e8c8600334 Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+430.09 грн
50+218.48 грн
100+199.59 грн
500+156.25 грн
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IPP65R150CFDAAKSA1 IPP65R150CFDAAKSA1 Infineon Technologies Infineon-IPX65R150CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139af71b2a12046 Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
1+359.06 грн
50+197.07 грн
100+184.05 грн
В кошику  од. на суму  грн.
IPP65R190CFDAAKSA1 IPP65R190CFDAAKSA1 Infineon Technologies Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1 Description: MOSFET N-CH 650V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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IPP65R310CFDAAKSA1 IPP65R310CFDAAKSA1 Infineon Technologies Infineon-IPX65R310CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136bafdd723265d Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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IPP65R660CFDAAKSA1 IPP65R660CFDAAKSA1 Infineon Technologies IPx65R660CFDA.pdf Description: MOSFET N-CH 650V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
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IPP80N08S406AKSA1 IPP80N08S406AKSA1 Infineon Technologies IPx80N08S4-06.pdf Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80P03P405AKSA1 IPP80P03P405AKSA1 Infineon Technologies IPx80P03P4-05.pdf Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101
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IPP80P04P407AKSA1 IPP80P04P407AKSA1 Infineon Technologies IPx80P04P4-07.pdf Description: MOSFET P-CH TO220-3
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IPP80P04P4L04AKSA1 IPP80P04P4L04AKSA1 Infineon Technologies IPx80P04P4L-04.pdf Description: MOSFET P-CH TO220-3
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IPP80P04P4L06AKSA1 IPP80P04P4L06AKSA1 Infineon Technologies IPx80P04P4L-06.pdf Description: MOSFET P-CH TO220-3
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IPS65R600E6AKMA1 IPS65R600E6AKMA1 Infineon Technologies Infineon-IPS65R600E6-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014eb4505cd02ed4 Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPW60R099CPAFKSA1 IPW60R099CPAFKSA1 Infineon Technologies Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe Description: MOSFET N-CH 600V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
1+519.86 грн
30+313.89 грн
120+297.90 грн
В кошику  од. на суму  грн.
IPW65R048CFDAFKSA1 IPW65R048CFDAFKSA1 Infineon Technologies Infineon-IPW65R048CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba294542255a Description: MOSFET N-CH 650V 63.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.9mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7440 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 236 шт:
термін постачання 21-31 дні (днів)
1+748.56 грн
30+428.32 грн
120+364.16 грн
В кошику  од. на суму  грн.
IPW65R080CFDAFKSA1 IPW65R080CFDAFKSA1 Infineon Technologies Infineon-IPW65R080CFDA-DS-v02_01-en.pdf?fileId=db3a304336797ff90136ba619f7a2584 Description: MOSFET N-CH 650V 43.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1130 шт:
термін постачання 21-31 дні (днів)
1+547.18 грн
30+307.08 грн
120+258.78 грн
510+221.64 грн
В кошику  од. на суму  грн.
IPW65R125C7XKSA1 IPW65R125C7XKSA1 Infineon Technologies Infineon-IPW65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd01420df7147364a5 Description: MOSFET N-CH 650V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
товару немає в наявності
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IPW65R150CFDAFKSA1 IPW65R150CFDAFKSA1 Infineon Technologies Infineon-IPX65R150CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139af71b2a12046 Description: MOSFET N-CH 650V 22.4A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 426 шт:
термін постачання 21-31 дні (днів)
2+253.68 грн
30+179.07 грн
120+167.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW65R190C7XKSA1 IPW65R190C7XKSA1 Infineon Technologies INFNS28170-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
на замовлення 227 шт:
термін постачання 21-31 дні (днів)
1+313.01 грн
30+166.77 грн
120+137.06 грн
В кошику  од. на суму  грн.
IPW80R290C3AFKSA1 IPW80R290C3AFKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 800V TO247
Packaging: Tube
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IPZ40N04S53R1ATMA1 IPZ40N04S53R1ATMA1 Infineon Technologies Infineon-IPZ40N04S5-3R1-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d660139b148a4 Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+24.53 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPZ40N04S55R4ATMA1 IPZ40N04S55R4ATMA1 Infineon Technologies infineon-ipz40n04s5-5r4-ds-en.pdf Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPZ40N04S58R4ATMA1 IPZ40N04S58R4ATMA1 Infineon Technologies Infineon-IPZ40N04S5-8R4-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158d8a817e4652a Description: MOSFET N-CH 40V 40A 8TSDSON-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 771 pF @ 25 V
Qualification: AEC-Q101
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IPZ40N04S5L2R8ATMA1 IPZ40N04S5L2R8ATMA1 Infineon Technologies Infineon-IPZ40N04S5L-2R8-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d6601139b4890 Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+24.53 грн
10000+23.08 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPZ40N04S5L4R8ATMA1 IPZ40N04S5L4R8ATMA1 Infineon Technologies Infineon-IPZ40N04S5L-4R8-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d66011b3e4894 Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+23.98 грн
10000+21.53 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPZ40N04S5L7R4ATMA1 IPZ40N04S5L7R4ATMA1 Infineon Technologies Infineon-IPZ40N04S5L-7R4-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d6601321448a0 Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPZ60R041P6FKSA1 IPZ60R041P6FKSA1 Infineon Technologies Infineon-IPZ60R041P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee36a7dc20200 Description: MOSFET N-CH 600V 77.5A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
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IPZ60R070P6FKSA1 IPZ60R070P6FKSA1 Infineon Technologies Infineon-IPZ60R070P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee38f178a0268 Description: MOSFET N-CH 600V 53.5A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
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IPZ60R099P6FKSA1 IPZ60R099P6FKSA1 Infineon Technologies Infineon-IPZ60R099P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee3fc85c20387 Description: MOSFET N-CH 600V 37.9A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
1+445.70 грн
30+245.57 грн
120+205.20 грн
В кошику  од. на суму  грн.
IPZ60R125P6FKSA1 IPZ60R125P6FKSA1 Infineon Technologies Infineon-IPZ60R125P6-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef3a661932f6b Description: MOSFET N-CH 600V 37.9A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
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IPZ65R065C7XKSA1 IPZ65R065C7XKSA1 Infineon Technologies INFNS28762-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 33A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
1+643.97 грн
30+363.65 грн
120+307.25 грн
В кошику  од. на суму  грн.
IPZ65R095C7XKSA1 IPZ65R095C7XKSA1 Infineon Technologies Infineon-IPZ65R095C7-DS-v02_00-en.pdf?fileId=db3a304341e0aed001420459d16f1601 Description: MOSFET N-CH 650V 24A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+551.86 грн
10+480.16 грн
100+397.51 грн
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KP214F2611XTMA1 Infineon Technologies Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
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KP219M1203XTMA1 KP219M1203XTMA1 Infineon Technologies KP219M1203_Rev1.0_5-6-13.pdf Description: SENSOR ANLG ABSOLUTE PRES DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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KP219N3022XTMA1 KP219N3022XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: SENSOR ANLG ABSOLUTE PRES DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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KP226N3022XTMA1 KP226N3022XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
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KP229N0421XTMA1 Infineon Technologies Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
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KP253XTMA1 KP253XTMA1 Infineon Technologies KP253.pdf Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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KP256XTMA1 KP256XTMA1 Infineon Technologies KP256.pdf Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Grade: Automotive
Qualification: AEC-Q100
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PTAB182002FCV1R250XTMA1 Infineon Technologies Infineon-PTAB182002FC_V1-DS-v04_00-en.pdf?fileId=db3a30433bbd3b5f013bcb7e53601ed6 Description: IC AMP RF LDMOS
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PTAB182002FCV1XWSA1 Infineon Technologies Infineon-PTAB182002FC_V1-DS-v04_00-en.pdf?fileId=db3a30433bbd3b5f013bcb7e53601ed6 Description: IC AMP RF LDMOS
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PTAB182002TCV2R250XUMA1 Infineon Technologies PTAB182002TC_Rev4_2014-07-01.pdf Description: RF MOSFET LDMOS 28V H-37248-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248-4
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 1.805GHz ~ 1.88GHz
Configuration: Dual, Common Source
Power - Output: 180W
Gain: 14.8dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Part Status: Active
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 520 mA
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PTAC210802FCV1R250XTMA1 Infineon Technologies ptac210802fc-v1_ds_04.pdf?fileId=db3a30433a747525013ab812fe3321fe Description: IC AMP RF LDMOS
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PTAC210802FCV1XWSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF MOSFET LDMOS
Packaging: Tray
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PTAC240502FCV1R250XTMA1 Infineon Technologies ptac240502fc-v1_ds_02.2.pdf?fileId=db3a3043426b8095014276d844452d67 Description: IC AMP RF LDMOS
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PTAC240502FCV1XWSA1 Infineon Technologies ptac240502fc-v1_ds_02.2.pdf?fileId=db3a3043426b8095014276d844452d67 Description: IC AMP RF LDMOS
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PTAC260302FCV1XWSA1 Infineon Technologies ptac260302fc_v1.pdf Description: IC AMP RF LDMOS
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PTAC260302SCV1R250XTMA1 Infineon Technologies PTAC260302SC.pdf Description: IC AMP RF LDMOS
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PTFA091503ELV4R250XTMA1 Infineon Technologies Infineon-PTFA091503EL_V4-DS-v03_00-en.pdf?fileId=db3a30432a7fedfc012a868db5f22c8a Description: IC FET RF LDMOS 150W PG-33288-6
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PTFA091503ELV4XWSA1 Infineon Technologies Infineon-PTFA091503EL_V4-DS-v03_00-en.pdf?fileId=db3a30432a7fedfc012a868db5f22c8a Description: IC FET RF LDMOS 150W PG-33288-6
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PTFB090901EAV2R250XTMA1 Infineon Technologies ptfb090901efa-v2_ds_05.1.pdf?fileId=db3a30433c70f5da013c74e32e041428 Description: IC AMP RF LDMOS
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PTFB090901EAV2XWSA1 Infineon Technologies ptfb090901efa-v2_ds_05.1.pdf?fileId=db3a30433c70f5da013c74e32e041428 Description: IC AMP RF LDMOS
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PTFB090901FAV2R250XTMA1 Infineon Technologies ptfb090901efa-v2_ds_05.1.pdf?fileId=db3a30433c70f5da013c74e32e041428 Description: IC AMP RF LDMOS
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PTFB090901FAV2XWSA1 Infineon Technologies ptfb090901efa-v2_ds_05.1.pdf?fileId=db3a30433c70f5da013c74e32e041428 Description: IC AMP RF LDMOS
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PTFB091802FCV1R250XTMA1 Infineon Technologies Infineon-PTFB091802FC-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cca064be543af Description: IC AMP RF LDMOS
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PTFB092707FHV1R250XTMA1 Infineon Technologies Infineon-PTFB092707FH_V1-DS-v03_00-en.pdf?fileId=db3a30434508770901451e411a7e28b3 Description: IC AMP RF LDMOS
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PTFB092707FHV1XWSA1 Infineon Technologies Infineon-PTFB092707FH_V1-DS-v03_00-en.pdf?fileId=db3a30434508770901451e411a7e28b3 Description: IC AMP RF LDMOS
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IPP030N10N5AKSA1 Infineon-IPP030N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49
IPP030N10N5AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
товару немає в наявності
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IPP052N08N5AKSA1 Infineon-IPP052N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014adebbb6487b7d
IPP052N08N5AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 66µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 40 V
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IPP083N10N5AKSA1 Infineon-IPP083N10N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac56a3779202b
IPP083N10N5AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 73A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
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IPP120N10S403AKSA1 IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a
IPP120N10S403AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Qualification: AEC-Q101
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IPP120P04P404AKSA1 IPx120P04P4-04.pdf
IPP120P04P404AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
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IPP65R095C7XKSA1 Infineon-IPP65R095C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd014209e8c8600334
IPP65R095C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+430.09 грн
50+218.48 грн
100+199.59 грн
500+156.25 грн
В кошику  од. на суму  грн.
IPP65R150CFDAAKSA1 Infineon-IPX65R150CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139af71b2a12046
IPP65R150CFDAAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+359.06 грн
50+197.07 грн
100+184.05 грн
В кошику  од. на суму  грн.
IPP65R190CFDAAKSA1 Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1
IPP65R190CFDAAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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IPP65R310CFDAAKSA1 Infineon-IPX65R310CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136bafdd723265d
IPP65R310CFDAAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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IPP65R660CFDAAKSA1 IPx65R660CFDA.pdf
IPP65R660CFDAAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
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IPP80N08S406AKSA1 IPx80N08S4-06.pdf
IPP80N08S406AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80P03P405AKSA1 IPx80P03P4-05.pdf
IPP80P03P405AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101
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IPP80P04P407AKSA1 IPx80P04P4-07.pdf
IPP80P04P407AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH TO220-3
товару немає в наявності
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IPP80P04P4L04AKSA1 IPx80P04P4L-04.pdf
IPP80P04P4L04AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH TO220-3
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IPP80P04P4L06AKSA1 IPx80P04P4L-06.pdf
IPP80P04P4L06AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH TO220-3
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IPS65R600E6AKMA1 Infineon-IPS65R600E6-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014eb4505cd02ed4
IPS65R600E6AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
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IPW60R099CPAFKSA1 Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe
IPW60R099CPAFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+519.86 грн
30+313.89 грн
120+297.90 грн
В кошику  од. на суму  грн.
IPW65R048CFDAFKSA1 Infineon-IPW65R048CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba294542255a
IPW65R048CFDAFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 63.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.9mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7440 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 236 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+748.56 грн
30+428.32 грн
120+364.16 грн
В кошику  од. на суму  грн.
IPW65R080CFDAFKSA1 Infineon-IPW65R080CFDA-DS-v02_01-en.pdf?fileId=db3a304336797ff90136ba619f7a2584
IPW65R080CFDAFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 43.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+547.18 грн
30+307.08 грн
120+258.78 грн
510+221.64 грн
В кошику  од. на суму  грн.
IPW65R125C7XKSA1 Infineon-IPW65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd01420df7147364a5
IPW65R125C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
товару немає в наявності
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IPW65R150CFDAFKSA1 Infineon-IPX65R150CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139af71b2a12046
IPW65R150CFDAFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 426 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+253.68 грн
30+179.07 грн
120+167.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW65R190C7XKSA1 INFNS28170-1.pdf?t.download=true&u=5oefqw
IPW65R190C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
на замовлення 227 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+313.01 грн
30+166.77 грн
120+137.06 грн
В кошику  од. на суму  грн.
IPW80R290C3AFKSA1 fundamentals-of-power-semiconductors
IPW80R290C3AFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V TO247
Packaging: Tube
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IPZ40N04S53R1ATMA1 Infineon-IPZ40N04S5-3R1-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d660139b148a4
IPZ40N04S53R1ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+24.53 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPZ40N04S55R4ATMA1 infineon-ipz40n04s5-5r4-ds-en.pdf
IPZ40N04S55R4ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPZ40N04S58R4ATMA1 Infineon-IPZ40N04S5-8R4-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158d8a817e4652a
IPZ40N04S58R4ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 771 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPZ40N04S5L2R8ATMA1 Infineon-IPZ40N04S5L-2R8-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d6601139b4890
IPZ40N04S5L2R8ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+24.53 грн
10000+23.08 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPZ40N04S5L4R8ATMA1 Infineon-IPZ40N04S5L-4R8-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d66011b3e4894
IPZ40N04S5L4R8ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+23.98 грн
10000+21.53 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPZ40N04S5L7R4ATMA1 Infineon-IPZ40N04S5L-7R4-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d6601321448a0
IPZ40N04S5L7R4ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPZ60R041P6FKSA1 Infineon-IPZ60R041P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee36a7dc20200
IPZ60R041P6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 77.5A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPZ60R070P6FKSA1 Infineon-IPZ60R070P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee38f178a0268
IPZ60R070P6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 53.5A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPZ60R099P6FKSA1 Infineon-IPZ60R099P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee3fc85c20387
IPZ60R099P6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+445.70 грн
30+245.57 грн
120+205.20 грн
В кошику  од. на суму  грн.
IPZ60R125P6FKSA1 Infineon-IPZ60R125P6-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef3a661932f6b
IPZ60R125P6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPZ65R065C7XKSA1 INFNS28762-1.pdf?t.download=true&u=5oefqw
IPZ65R065C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 33A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+643.97 грн
30+363.65 грн
120+307.25 грн
В кошику  од. на суму  грн.
IPZ65R095C7XKSA1 Infineon-IPZ65R095C7-DS-v02_00-en.pdf?fileId=db3a304341e0aed001420459d16f1601
IPZ65R095C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+551.86 грн
10+480.16 грн
100+397.51 грн
В кошику  од. на суму  грн.
KP214F2611XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
товару немає в наявності
В кошику  од. на суму  грн.
KP219M1203XTMA1 KP219M1203_Rev1.0_5-6-13.pdf
KP219M1203XTMA1
Виробник: Infineon Technologies
Description: SENSOR ANLG ABSOLUTE PRES DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
KP219N3022XTMA1 fundamentals-of-power-semiconductors
KP219N3022XTMA1
Виробник: Infineon Technologies
Description: SENSOR ANLG ABSOLUTE PRES DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
KP226N3022XTMA1 Part_Number_Guide_Web.pdf
KP226N3022XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
товару немає в наявності
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KP229N0421XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
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В кошику  од. на суму  грн.
KP253XTMA1 KP253.pdf
KP253XTMA1
Виробник: Infineon Technologies
Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
KP256XTMA1 KP256.pdf
KP256XTMA1
Виробник: Infineon Technologies
Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
PTAB182002FCV1R250XTMA1 Infineon-PTAB182002FC_V1-DS-v04_00-en.pdf?fileId=db3a30433bbd3b5f013bcb7e53601ed6
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
товару немає в наявності
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PTAB182002FCV1XWSA1 Infineon-PTAB182002FC_V1-DS-v04_00-en.pdf?fileId=db3a30433bbd3b5f013bcb7e53601ed6
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
товару немає в наявності
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PTAB182002TCV2R250XUMA1 PTAB182002TC_Rev4_2014-07-01.pdf
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-37248-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248-4
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 1.805GHz ~ 1.88GHz
Configuration: Dual, Common Source
Power - Output: 180W
Gain: 14.8dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Part Status: Active
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 520 mA
товару немає в наявності
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PTAC210802FCV1R250XTMA1 ptac210802fc-v1_ds_04.pdf?fileId=db3a30433a747525013ab812fe3321fe
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
товару немає в наявності
В кошику  од. на суму  грн.
PTAC210802FCV1XWSA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS
Packaging: Tray
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PTAC240502FCV1R250XTMA1 ptac240502fc-v1_ds_02.2.pdf?fileId=db3a3043426b8095014276d844452d67
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
товару немає в наявності
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PTAC240502FCV1XWSA1 ptac240502fc-v1_ds_02.2.pdf?fileId=db3a3043426b8095014276d844452d67
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
товару немає в наявності
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PTAC260302FCV1XWSA1 ptac260302fc_v1.pdf
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
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PTAC260302SCV1R250XTMA1 PTAC260302SC.pdf
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
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PTFA091503ELV4R250XTMA1 Infineon-PTFA091503EL_V4-DS-v03_00-en.pdf?fileId=db3a30432a7fedfc012a868db5f22c8a
Виробник: Infineon Technologies
Description: IC FET RF LDMOS 150W PG-33288-6
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PTFA091503ELV4XWSA1 Infineon-PTFA091503EL_V4-DS-v03_00-en.pdf?fileId=db3a30432a7fedfc012a868db5f22c8a
Виробник: Infineon Technologies
Description: IC FET RF LDMOS 150W PG-33288-6
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PTFB090901EAV2R250XTMA1 ptfb090901efa-v2_ds_05.1.pdf?fileId=db3a30433c70f5da013c74e32e041428
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
товару немає в наявності
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PTFB090901EAV2XWSA1 ptfb090901efa-v2_ds_05.1.pdf?fileId=db3a30433c70f5da013c74e32e041428
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
товару немає в наявності
В кошику  од. на суму  грн.
PTFB090901FAV2R250XTMA1 ptfb090901efa-v2_ds_05.1.pdf?fileId=db3a30433c70f5da013c74e32e041428
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
товару немає в наявності
В кошику  од. на суму  грн.
PTFB090901FAV2XWSA1 ptfb090901efa-v2_ds_05.1.pdf?fileId=db3a30433c70f5da013c74e32e041428
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
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PTFB091802FCV1R250XTMA1 Infineon-PTFB091802FC-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cca064be543af
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
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PTFB092707FHV1R250XTMA1 Infineon-PTFB092707FH_V1-DS-v03_00-en.pdf?fileId=db3a30434508770901451e411a7e28b3
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
товару немає в наявності
В кошику  од. на суму  грн.
PTFB092707FHV1XWSA1 Infineon-PTFB092707FH_V1-DS-v03_00-en.pdf?fileId=db3a30434508770901451e411a7e28b3
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS
товару немає в наявності
В кошику  од. на суму  грн.
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