Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148779) > Сторінка 273 з 2480
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||
|---|---|---|---|---|---|---|---|
| IRG7PK35UD1MPBF | Infineon Technologies | Description: IGBT 1200V ULTRA FAST TO247 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG7PK42UD1-EPBF | Infineon Technologies |
 Description: IGBT 1200V ULTRA FAST TO247 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG8CH106K10F | Infineon Technologies |
Description: IGBT 1200V 110A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG8CH10K10F | Infineon Technologies |
Description: IGBT 1200V 5A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG8CH15K10D | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG8CH15K10F | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG8CH20K10D | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG8CH20K10F | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG8CH29K10D | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG8CH29K10F | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG8CH42K10D | Infineon Technologies | Description: IGBT 1200V 40A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRG8CH42K10F | Infineon Technologies |
Description: IGBT 1200V 40A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
 |
BSP75NNT | Infineon Technologies |
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4 Packaging: Tape & Reel (TR) Features: Auto Restart Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 430mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 700mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
PTFA181001E V4 T500 | Infineon Technologies |
Description: IC FET RF LDMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
TLE4253GSXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 250MA DSO8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive Part Status: Discontinued at Digi-Key PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||
| TLE4254GSXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 70MA 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 70mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive Part Status: Discontinued at Digi-Key PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 70mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IDC08D120T6MX1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 10A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IDC10D120T6MX1SA1 | Infineon Technologies |
Description: DIODE STD 1200V 15A SAWN ON FOIL Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IDC15D120T6MX1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 25A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 25 A Current - Reverse Leakage @ Vr: 5.2 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IDC28D120T6MX1SA2 | Infineon Technologies |
Description: DIODE STD 1200V 50A SAWN ON FOIL Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 50 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IDC40D120T6MX1SA4 | Infineon Technologies |
Description: DIODE STD 1200V 75A SAWN ON FOIL Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 Current - Reverse Leakage @ Vr: 14 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
 |
SIDC06D120H8X1SA2 | Infineon Technologies |
Description: DIODE STANDARD 1.2KV 7.5A SAWN Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 7.5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
|
SIDC08D120H8X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 1200V 150A Packaging: Bulk Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
SIDC105D120H8X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 1.2KV 200A SAWN Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 200A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
| SIDC10D120H8X1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
| SIDC14D120H8X1SA1 | Infineon Technologies |
Description: DIODE GP 1.2KV 25A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
| SIDC30D120H8X1SA4 | Infineon Technologies |
Description: DIODE GP 1.2KV 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
|
|
SIDC42D120H8X1SA3 | Infineon Technologies |
Description: DIODE STD 1200V 75A SAWN ON FOIL Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
|
SIDC81D120H8X1SA3 | Infineon Technologies |
Description: DIODE STANDARD 1200V 150A Packaging: Bulk Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
| IRD3CH101DB6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 200A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH101DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH101DF6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH11DB6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 25A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190 ns Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A Current - Reverse Leakage @ Vr: 700 nA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH11DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH11DF6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH16DB6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH16DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH16DF6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH24DB6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH24DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH24DF6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH31DB6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 50A WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH31DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH31DF6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH42DB6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 75A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH42DD6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH42DF6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH53DB6 | Infineon Technologies |
Description: DIODE STANDARD 1200V 100A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 270 ns Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH53DD6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH53DF6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH5BD6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH5DB6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 5A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 96 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A Current - Reverse Leakage @ Vr: 100 nA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH82DB6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 150A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH82DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH82DF6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH9DB6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 10A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 154 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 10 A Current - Reverse Leakage @ Vr: 200 nA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH9DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IRD3CH9DF6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IPI11N60C3AAKSA2 | Infineon Technologies |
Description: MOSFET N-CH I2PAK Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||
 |
KIT_XMC14_BOOT_001 | Infineon Technologies |
Description: BOOT KIT XMC1400 EVAL BRD Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M0 Utilized IC / Part: XMC1400 Platform: Boot Kit Part Status: Active |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
|
| IRG7PK35UD1MPBF |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST TO247
Description: IGBT 1200V ULTRA FAST TO247
товару немає в наявності
В кошику
од. на суму грн.
| IRG7PK42UD1-EPBF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST TO247
Description: IGBT 1200V ULTRA FAST TO247
товару немає в наявності
В кошику
од. на суму грн.
| IRG8CH106K10F |
|
Виробник: Infineon Technologies
Description: IGBT 1200V 110A DIE
Description: IGBT 1200V 110A DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRG8CH10K10F |
|
Виробник: Infineon Technologies
Description: IGBT 1200V 5A DIE
Description: IGBT 1200V 5A DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRG8CH15K10D |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRG8CH15K10F |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRG8CH20K10D |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRG8CH20K10F |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRG8CH29K10D |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRG8CH29K10F |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRG8CH42K10D |
Виробник: Infineon Technologies
Description: IGBT 1200V 40A DIE
Description: IGBT 1200V 40A DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRG8CH42K10F |
|
Виробник: Infineon Technologies
Description: IGBT 1200V 40A DIE
Description: IGBT 1200V 40A DIE
товару немає в наявності
В кошику
од. на суму грн.
| BSP75NNT |
|
Виробник: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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| PTFA181001E V4 T500 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS
Description: IC FET RF LDMOS
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| TLE4253GSXUMA2 |
|
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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| TLE4254GSXUMA2 |
|
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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| IDC08D120T6MX1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A
Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V
Description: DIODE GP 1.2KV 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A
Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V
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| IDC10D120T6MX1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE STD 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V
Description: DIODE STD 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V
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| IDC15D120T6MX1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 25 A
Current - Reverse Leakage @ Vr: 5.2 µA @ 1200 V
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 25 A
Current - Reverse Leakage @ Vr: 5.2 µA @ 1200 V
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| IDC28D120T6MX1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE STD 1200V 50A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE STD 1200V 50A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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| IDC40D120T6MX1SA4 |
|
Виробник: Infineon Technologies
Description: DIODE STD 1200V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Description: DIODE STD 1200V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
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| SIDC06D120H8X1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE STANDARD 1.2KV 7.5A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE STANDARD 1.2KV 7.5A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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| SIDC08D120H8X1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE STANDARD 1200V 150A
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE STANDARD 1200V 150A
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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| SIDC105D120H8X1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE STANDARD 1.2KV 200A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE STANDARD 1.2KV 200A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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| SIDC10D120H8X1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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| SIDC14D120H8X1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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| SIDC30D120H8X1SA4 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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| SIDC42D120H8X1SA3 |
|
Виробник: Infineon Technologies
Description: DIODE STD 1200V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE STD 1200V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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| SIDC81D120H8X1SA3 |
|
Виробник: Infineon Technologies
Description: DIODE STANDARD 1200V 150A
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE STANDARD 1200V 150A
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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| IRD3CH101DB6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 200A DIE
Description: DIODE GEN PURP 1.2KV 200A DIE
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| IRD3CH101DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
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| IRD3CH101DF6 |
|
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Part Status: Obsolete
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Part Status: Obsolete
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| IRD3CH11DB6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A
Current - Reverse Leakage @ Vr: 700 nA @ 1200 V
Description: DIODE GEN PURP 1.2KV 25A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A
Current - Reverse Leakage @ Vr: 700 nA @ 1200 V
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| IRD3CH11DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
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| IRD3CH16DB6 |
|
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
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| IRD3CH16DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
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| IRD3CH24DB6 |
|
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
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| IRD3CH24DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
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| IRD3CH24DF6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
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| IRD3CH31DB6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 50A WAFER
Description: DIODE GEN PURP 1.2KV 50A WAFER
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH31DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH42DB6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 75A DIE
Description: DIODE GEN PURP 1.2KV 75A DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH42DD6 |
|
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH42DF6 |
|
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Part Status: Obsolete
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH53DB6 |
|
Виробник: Infineon Technologies
Description: DIODE STANDARD 1200V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE STANDARD 1200V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH5DB6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 5A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A
Current - Reverse Leakage @ Vr: 100 nA @ 1200 V
Description: DIODE GEN PURP 1.2KV 5A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A
Current - Reverse Leakage @ Vr: 100 nA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH82DB6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 150A DIE
Description: DIODE GEN PURP 1.2KV 150A DIE
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH82DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH82DF6 |
|
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH9DB6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 154 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 10 A
Current - Reverse Leakage @ Vr: 200 nA @ 1200 V
Description: DIODE GEN PURP 1.2KV 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 154 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 10 A
Current - Reverse Leakage @ Vr: 200 nA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH9DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товару немає в наявності
В кошику
од. на суму грн.
| IRD3CH9DF6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товару немає в наявності
В кошику
од. на суму грн.
| KIT_XMC14_BOOT_001 |
|
Виробник: Infineon Technologies
Description: BOOT KIT XMC1400 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1400
Platform: Boot Kit
Part Status: Active
Description: BOOT KIT XMC1400 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1400
Platform: Boot Kit
Part Status: Active
на замовлення 96 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1889.40 грн |