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IPG20N06S415ATMA1 IPG20N06S415ATMA1 Infineon Technologies Infineon-IPG20N06S4_15-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf657f886c19 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
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IPG20N06S4L14ATMA1 IPG20N06S4L14ATMA1 Infineon Technologies Infineon-IPG20N06S4L_14-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf67e32d6c23 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
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IPG20N06S4L26AATMA1 IPG20N06S4L26AATMA1 Infineon Technologies Infineon-IPG20N06S4L_26A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454e0c275177 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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IPG20N10S4L22ATMA1 IPG20N10S4L22ATMA1 Infineon Technologies Infineon-IPG20N10S4L_22-DS-v01_01-en.pdf?fileId=db3a3043372d5cc801374ffbdf9504fd Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 Infineon Technologies Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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IPI084N06L3GXKSA1 IPI084N06L3GXKSA1 Infineon Technologies IPx084N06L3G.pdf Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
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IPI120N08S403AKSA1 IPI120N08S403AKSA1 Infineon Technologies IPP_B_I120N08S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a014763906e790512 Description: MOSFET N-CH 80V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPI120N08S404AKSA1 IPI120N08S404AKSA1 Infineon Technologies IPx120N08S4-04.pdf Description: MOSFET N-CH 80V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPI120N10S405AKSA1 IPI120N10S405AKSA1 Infineon Technologies IPx120N10S4-05.pdf Description: MOSFET N-CH 100V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Qualification: AEC-Q101
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IPI120P04P404AKSA1 IPI120P04P404AKSA1 Infineon Technologies IPx120P04P4-04.pdf Description: MOSFET P-CH 40V 120A TO262-3
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IPI120P04P4L03AKSA1 Infineon Technologies Infineon-IPP_B_I120P04P4L_03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f&ack=t Description: MOSFET P-CH TO262-3
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IPI65R280E6XKSA1 IPI65R280E6XKSA1 Infineon Technologies Infineon-IPI65R280E6-DS-v02_00-en.pdf?fileId=5546d46145f1f3a4014618e6c4f81afe Description: MOSFET N-CH 650V 13.8A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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IPI70P04P409AKSA1 Infineon Technologies Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f Description: MOSFET N-CH TO262-3
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IPI80N08S406AKSA1 IPI80N08S406AKSA1 Infineon Technologies IPx80N08S4-06.pdf Description: MOSFET N-CH 80V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPI80P03P405AKSA1 IPI80P03P405AKSA1 Infineon Technologies IPx80P03P4-05.pdf Description: MOSFET P-CH 30V 80A TO262-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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IPI80P04P405AKSA1 Infineon Technologies Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a Description: MOSFET P-CH TO262-3
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IPI80P04P407AKSA1 Infineon Technologies Infineon-IPP_B_I80P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783099142e25 Description: MOSFET P-CH TO262-3
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IPI80P04P4L04AKSA1 Infineon Technologies Infineon-IPP_B_I80P04P4L_04-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783241fb2e2a Description: MOSFET P-CH TO262-3
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IPI80P04P4L06AKSA1 Infineon Technologies Infineon-IPP_B_I80P04P4L-DS-06-v01_00-en.pdf?fileId=db3a30432f69f146012f782f18402e14 Description: MOSFET P-CH TO262-3
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IPI80P04P4L08AKSA1 IPI80P04P4L08AKSA1 Infineon Technologies IPx80P04P4L-08.pdf Description: MOSFET P-CH TO262-3
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IPL60R2K1C6SATMA1 IPL60R2K1C6SATMA1 Infineon Technologies DS_IPL60R2K1C6S_2_0.pdf?fileId=5546d4614755559a01475e3d01ca041b Description: MOSFET N-CH 600V 2.3A THIN-PAK
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TSON-8-2
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 21.6W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
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IPL65R070C7AUMA1 IPL65R070C7AUMA1 Infineon Technologies Infineon-IPL65R070C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f091901e6b3d Description: MOSFET N-CH 650V 28A 4VSON
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4V @ 850µA
Power Dissipation (Max): 169W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
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IPL65R165CFDAUMA1 Infineon Technologies Infineon-IPL65R165CFD-DS-v02_00-en.pdf?fileId=db3a304344d727a80144dee127e60baf Description: MOSFET N-CH 4VSON
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 Мінімальне замовлення: 3000 шт
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IPL65R190E6AUMA1 IPL65R190E6AUMA1 Infineon Technologies Infineon-IPL65R190E6-DS-v02_00-en.pdf?fileId=db3a304344d727a80144df7870ce0c0c Description: MOSFET N-CH 650V 20.2A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-VSON-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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IPL65R1K0C6SATMA1 IPL65R1K0C6SATMA1 Infineon Technologies DS_IPL65R1K0C6S_2_0.pdf?fileId=5546d4614755559a0147592562350070 Description: MOSFET N-CH 650V 4.2A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TSON-8-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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IPL65R1K5C6SATMA1 IPL65R1K5C6SATMA1 Infineon Technologies DS_IPL65R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d1bcc8e011a Description: MOSFET N-CH 650V 3A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 26.6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TSON-8-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
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IPL65R210CFDAUMA1 IPL65R210CFDAUMA1 Infineon Technologies Infineon-IPL65R210CFD-DS-v02_00-en.pdf?fileId=db3a304344d727a80144e392799a11a4 Description: MOSFET N-CH 4VSON
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IPL65R310E6AUMA1 Infineon Technologies Infineon-IPL65R310E6-DS-v02_01-en.pdf?fileId=db3a304344ae06150144b16ec3b200bc Description: MOSFET N-CH 4VSON
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 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R340CFDAUMA1 Infineon Technologies Infineon-IPL65R340CFD-DS-v02_00-en.pdf?fileId=db3a30433f2e70c5013f41d258c14e3d Description: MOSFET N-CH 4VSON
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R420E6AUMA1 Infineon Technologies Infineon-IPL65R420E-DS-v02_01-en.pdf?fileId=db3a304344ae06150144b19d39c60132 Description: MOSFET N-CH 4VSON
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R460CFDAUMA1 Infineon Technologies Infineon-IPL65R460CFD-DS-v02_00-en.pdf?fileId=db3a30433f2e70c5013f41ed465d4e69 Description: MOSFET N-CH 4VSON
товару немає в наявності
В кошику  од. на суму  грн.
IPL65R650C6SATMA1 IPL65R650C6SATMA1 Infineon Technologies DS_IPL65R650C6S_2_0.pdf?fileId=5546d4614755559a01475d375b530145 Description: MOSFET N-CH 650V 6.7A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TSON-8-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IPL65R660E6AUMA1 Infineon Technologies Infineon-IPL65R660E6-DS-v02_01-en.pdf?fileId=db3a304344ae06150144b1d4c6280166 Description: MOSFET N-CH 4VSON
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R725CFDAUMA1 Infineon Technologies Infineon-IPL65R725CFD-DS-v02_00-en.pdf?fileId=db3a30433f2e70c5013f4253f8dc4ec9 Description: MOSFET N-CH 4VSON
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPLU300N04S41R1XTMA1 IPLU300N04S41R1XTMA1 Infineon Technologies Infineon-IPLU300N04S4-1R1-DS-v01_00-EN.pdf?fileId=5546d4624a0bf290014a4de4e2cb319a Description: MOSFET N-CH 40V 300A 8HSOF
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 12090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 125µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2000+113.03 грн
4000+107.04 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPN10ELSXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC GATE DRVR HALF-BRIDGE SSOP-14
товару немає в наявності
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IPP027N08N5AKSA1 IPP027N08N5AKSA1 Infineon Technologies Infineon-IPP027N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014acf48b5061bd4 Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP030N10N5AKSA1 IPP030N10N5AKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP052N08N5AKSA1 IPP052N08N5AKSA1 Infineon Technologies Infineon-IPP052N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014adebbb6487b7d Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 66µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP083N10N5AKSA1 IPP083N10N5AKSA1 Infineon Technologies Infineon-IPP083N10N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac56a3779202b Description: MOSFET N-CH 100V 73A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP120N10S403AKSA1 IPP120N10S403AKSA1 Infineon Technologies IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPP120P04P404AKSA1 IPP120P04P404AKSA1 Infineon Technologies IPx120P04P4-04.pdf Description: MOSFET P-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R095C7XKSA1 IPP65R095C7XKSA1 Infineon Technologies Infineon-IPP65R095C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd014209e8c8600334 Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+426.97 грн
50+216.89 грн
100+198.14 грн
500+155.12 грн
В кошику  од. на суму  грн.
IPP65R150CFDAAKSA1 IPP65R150CFDAAKSA1 Infineon Technologies Infineon-IPX65R150CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139af71b2a12046 Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Qualification: AEC-Q101
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
1+356.46 грн
50+195.64 грн
100+182.72 грн
В кошику  од. на суму  грн.
IPP65R190CFDAAKSA1 IPP65R190CFDAAKSA1 Infineon Technologies Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1 Description: MOSFET N-CH 650V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R310CFDAAKSA1 IPP65R310CFDAAKSA1 Infineon Technologies Infineon-IPX65R310CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136bafdd723265d Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP65R660CFDAAKSA1 IPP65R660CFDAAKSA1 Infineon Technologies IPx65R660CFDA.pdf Description: MOSFET N-CH 650V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP80N08S406AKSA1 IPP80N08S406AKSA1 Infineon Technologies IPx80N08S4-06.pdf Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP80P03P405AKSA1 IPP80P03P405AKSA1 Infineon Technologies IPx80P03P4-05.pdf Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPP80P04P407AKSA1 IPP80P04P407AKSA1 Infineon Technologies IPx80P04P4-07.pdf Description: MOSFET P-CH TO220-3
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В кошику  од. на суму  грн.
IPP80P04P4L04AKSA1 IPP80P04P4L04AKSA1 Infineon Technologies IPx80P04P4L-04.pdf Description: MOSFET P-CH TO220-3
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP80P04P4L06AKSA1 IPP80P04P4L06AKSA1 Infineon Technologies IPx80P04P4L-06.pdf Description: MOSFET P-CH TO220-3
товару немає в наявності
В кошику  од. на суму  грн.
IPS65R600E6AKMA1 IPS65R600E6AKMA1 Infineon Technologies Infineon-IPS65R600E6-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014eb4505cd02ed4 Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R099CPAFKSA1 IPW60R099CPAFKSA1 Infineon Technologies Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe Description: MOSFET N-CH 600V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
1+516.09 грн
30+311.62 грн
120+295.74 грн
В кошику  од. на суму  грн.
IPW65R048CFDAFKSA1 IPW65R048CFDAFKSA1 Infineon Technologies Infineon-IPW65R048CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba294542255a Description: MOSFET N-CH 650V 63.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.9mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7440 pF @ 100 V
Qualification: AEC-Q101
на замовлення 236 шт:
термін постачання 21-31 дні (днів)
1+743.14 грн
30+425.21 грн
120+361.52 грн
В кошику  од. на суму  грн.
IPW65R080CFDAFKSA1 IPW65R080CFDAFKSA1 Infineon Technologies Infineon-IPW65R080CFDA-DS-v02_01-en.pdf?fileId=db3a304336797ff90136ba619f7a2584 Description: MOSFET N-CH 650V 43.3A TO247-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Power Dissipation (Max): 391W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1130 шт:
термін постачання 21-31 дні (днів)
1+543.21 грн
30+304.85 грн
120+256.90 грн
510+220.03 грн
В кошику  од. на суму  грн.
IPW65R125C7XKSA1 IPW65R125C7XKSA1 Infineon Technologies Infineon-IPW65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd01420df7147364a5 Description: MOSFET N-CH 650V 18A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
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IPW65R150CFDAFKSA1 IPW65R150CFDAFKSA1 Infineon Technologies Infineon-IPX65R150CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139af71b2a12046 Description: MOSFET N-CH 650V 22.4A TO247-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Power Dissipation (Max): 195.3W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
1+394.43 грн
30+213.74 грн
В кошику  од. на суму  грн.
IPW65R190C7XKSA1 IPW65R190C7XKSA1 Infineon Technologies INFNS28170-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
на замовлення 227 шт:
термін постачання 21-31 дні (днів)
1+310.74 грн
30+165.56 грн
120+136.07 грн
В кошику  од. на суму  грн.
IPW80R290C3AFKSA1 IPW80R290C3AFKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 800V TO247
Packaging: Tube
товару немає в наявності
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IPG20N06S415ATMA1 Infineon-IPG20N06S4_15-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf657f886c19
IPG20N06S415ATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPG20N06S4L14ATMA1 Infineon-IPG20N06S4L_14-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf67e32d6c23
IPG20N06S4L14ATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPG20N06S4L26AATMA1 Infineon-IPG20N06S4L_26A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454e0c275177
IPG20N06S4L26AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IPG20N10S4L22ATMA1 Infineon-IPG20N10S4L_22-DS-v01_01-en.pdf?fileId=db3a3043372d5cc801374ffbdf9504fd
IPG20N10S4L22ATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IPG20N10S4L35ATMA1 Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd
IPG20N10S4L35ATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IPI084N06L3GXKSA1 IPx084N06L3G.pdf
IPI084N06L3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
товару немає в наявності
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IPI120N08S403AKSA1 IPP_B_I120N08S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a014763906e790512
IPI120N08S403AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPI120N08S404AKSA1 IPx120N08S4-04.pdf
IPI120N08S404AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPI120N10S405AKSA1 IPx120N10S4-05.pdf
IPI120N10S405AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Qualification: AEC-Q101
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IPI120P04P404AKSA1 IPx120P04P4-04.pdf
IPI120P04P404AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO262-3
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IPI120P04P4L03AKSA1 Infineon-IPP_B_I120P04P4L_03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f&ack=t
Виробник: Infineon Technologies
Description: MOSFET P-CH TO262-3
товару немає в наявності
В кошику  од. на суму  грн.
IPI65R280E6XKSA1 Infineon-IPI65R280E6-DS-v02_00-en.pdf?fileId=5546d46145f1f3a4014618e6c4f81afe
IPI65R280E6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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IPI70P04P409AKSA1 Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f
Виробник: Infineon Technologies
Description: MOSFET N-CH TO262-3
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IPI80N08S406AKSA1 IPx80N08S4-06.pdf
IPI80N08S406AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPI80P03P405AKSA1 IPx80P03P4-05.pdf
IPI80P03P405AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO262-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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IPI80P04P405AKSA1 Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a
Виробник: Infineon Technologies
Description: MOSFET P-CH TO262-3
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IPI80P04P407AKSA1 Infineon-IPP_B_I80P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783099142e25
Виробник: Infineon Technologies
Description: MOSFET P-CH TO262-3
товару немає в наявності
В кошику  од. на суму  грн.
IPI80P04P4L04AKSA1 Infineon-IPP_B_I80P04P4L_04-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783241fb2e2a
Виробник: Infineon Technologies
Description: MOSFET P-CH TO262-3
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IPI80P04P4L06AKSA1 Infineon-IPP_B_I80P04P4L-DS-06-v01_00-en.pdf?fileId=db3a30432f69f146012f782f18402e14
Виробник: Infineon Technologies
Description: MOSFET P-CH TO262-3
товару немає в наявності
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IPI80P04P4L08AKSA1 IPx80P04P4L-08.pdf
IPI80P04P4L08AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH TO262-3
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPL60R2K1C6SATMA1 DS_IPL60R2K1C6S_2_0.pdf?fileId=5546d4614755559a01475e3d01ca041b
IPL60R2K1C6SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A THIN-PAK
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TSON-8-2
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 21.6W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
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IPL65R070C7AUMA1 Infineon-IPL65R070C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f091901e6b3d
IPL65R070C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 28A 4VSON
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4V @ 850µA
Power Dissipation (Max): 169W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R165CFDAUMA1 Infineon-IPL65R165CFD-DS-v02_00-en.pdf?fileId=db3a304344d727a80144dee127e60baf
Виробник: Infineon Technologies
Description: MOSFET N-CH 4VSON
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R190E6AUMA1 Infineon-IPL65R190E6-DS-v02_00-en.pdf?fileId=db3a304344d727a80144df7870ce0c0c
IPL65R190E6AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-VSON-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPL65R1K0C6SATMA1 DS_IPL65R1K0C6S_2_0.pdf?fileId=5546d4614755559a0147592562350070
IPL65R1K0C6SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 4.2A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TSON-8-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IPL65R1K5C6SATMA1 DS_IPL65R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d1bcc8e011a
IPL65R1K5C6SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 26.6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TSON-8-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IPL65R210CFDAUMA1 Infineon-IPL65R210CFD-DS-v02_00-en.pdf?fileId=db3a304344d727a80144e392799a11a4
IPL65R210CFDAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 4VSON
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R310E6AUMA1 Infineon-IPL65R310E6-DS-v02_01-en.pdf?fileId=db3a304344ae06150144b16ec3b200bc
Виробник: Infineon Technologies
Description: MOSFET N-CH 4VSON
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R340CFDAUMA1 Infineon-IPL65R340CFD-DS-v02_00-en.pdf?fileId=db3a30433f2e70c5013f41d258c14e3d
Виробник: Infineon Technologies
Description: MOSFET N-CH 4VSON
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R420E6AUMA1 Infineon-IPL65R420E-DS-v02_01-en.pdf?fileId=db3a304344ae06150144b19d39c60132
Виробник: Infineon Technologies
Description: MOSFET N-CH 4VSON
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R460CFDAUMA1 Infineon-IPL65R460CFD-DS-v02_00-en.pdf?fileId=db3a30433f2e70c5013f41ed465d4e69
Виробник: Infineon Technologies
Description: MOSFET N-CH 4VSON
товару немає в наявності
В кошику  од. на суму  грн.
IPL65R650C6SATMA1 DS_IPL65R650C6S_2_0.pdf?fileId=5546d4614755559a01475d375b530145
IPL65R650C6SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6.7A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TSON-8-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IPL65R660E6AUMA1 Infineon-IPL65R660E6-DS-v02_01-en.pdf?fileId=db3a304344ae06150144b1d4c6280166
Виробник: Infineon Technologies
Description: MOSFET N-CH 4VSON
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL65R725CFDAUMA1 Infineon-IPL65R725CFD-DS-v02_00-en.pdf?fileId=db3a30433f2e70c5013f4253f8dc4ec9
Виробник: Infineon Technologies
Description: MOSFET N-CH 4VSON
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPLU300N04S41R1XTMA1 Infineon-IPLU300N04S4-1R1-DS-v01_00-EN.pdf?fileId=5546d4624a0bf290014a4de4e2cb319a
IPLU300N04S41R1XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 300A 8HSOF
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 12090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 125µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+113.03 грн
4000+107.04 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPN10ELSXUMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE SSOP-14
товару немає в наявності
В кошику  од. на суму  грн.
IPP027N08N5AKSA1 Infineon-IPP027N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014acf48b5061bd4
IPP027N08N5AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP030N10N5AKSA1 fundamentals-of-power-semiconductors
IPP030N10N5AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP052N08N5AKSA1 Infineon-IPP052N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014adebbb6487b7d
IPP052N08N5AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 66µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP083N10N5AKSA1 Infineon-IPP083N10N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac56a3779202b
IPP083N10N5AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 73A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP120N10S403AKSA1 IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a
IPP120N10S403AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPP120P04P404AKSA1 IPx120P04P4-04.pdf
IPP120P04P404AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R095C7XKSA1 Infineon-IPP65R095C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd014209e8c8600334
IPP65R095C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+426.97 грн
50+216.89 грн
100+198.14 грн
500+155.12 грн
В кошику  од. на суму  грн.
IPP65R150CFDAAKSA1 Infineon-IPX65R150CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139af71b2a12046
IPP65R150CFDAAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Qualification: AEC-Q101
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+356.46 грн
50+195.64 грн
100+182.72 грн
В кошику  од. на суму  грн.
IPP65R190CFDAAKSA1 Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1
IPP65R190CFDAAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R310CFDAAKSA1 Infineon-IPX65R310CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136bafdd723265d
IPP65R310CFDAAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP65R660CFDAAKSA1 IPx65R660CFDA.pdf
IPP65R660CFDAAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP80N08S406AKSA1 IPx80N08S4-06.pdf
IPP80N08S406AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP80P03P405AKSA1 IPx80P03P4-05.pdf
IPP80P03P405AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101
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IPP80P04P407AKSA1 IPx80P04P4-07.pdf
IPP80P04P407AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH TO220-3
товару немає в наявності
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IPP80P04P4L04AKSA1 IPx80P04P4L-04.pdf
IPP80P04P4L04AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH TO220-3
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP80P04P4L06AKSA1 IPx80P04P4L-06.pdf
IPP80P04P4L06AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH TO220-3
товару немає в наявності
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IPS65R600E6AKMA1 Infineon-IPS65R600E6-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014eb4505cd02ed4
IPS65R600E6AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPW60R099CPAFKSA1 Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe
IPW60R099CPAFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+516.09 грн
30+311.62 грн
120+295.74 грн
В кошику  од. на суму  грн.
IPW65R048CFDAFKSA1 Infineon-IPW65R048CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba294542255a
IPW65R048CFDAFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 63.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.9mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7440 pF @ 100 V
Qualification: AEC-Q101
на замовлення 236 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+743.14 грн
30+425.21 грн
120+361.52 грн
В кошику  од. на суму  грн.
IPW65R080CFDAFKSA1 Infineon-IPW65R080CFDA-DS-v02_01-en.pdf?fileId=db3a304336797ff90136ba619f7a2584
IPW65R080CFDAFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 43.3A TO247-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Power Dissipation (Max): 391W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1130 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+543.21 грн
30+304.85 грн
120+256.90 грн
510+220.03 грн
В кошику  од. на суму  грн.
IPW65R125C7XKSA1 Infineon-IPW65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd01420df7147364a5
IPW65R125C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
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IPW65R150CFDAFKSA1 Infineon-IPX65R150CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139af71b2a12046
IPW65R150CFDAFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO247-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Power Dissipation (Max): 195.3W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+394.43 грн
30+213.74 грн
В кошику  од. на суму  грн.
IPW65R190C7XKSA1 INFNS28170-1.pdf?t.download=true&u=5oefqw
IPW65R190C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
на замовлення 227 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+310.74 грн
30+165.56 грн
120+136.07 грн
В кошику  од. на суму  грн.
IPW80R290C3AFKSA1 fundamentals-of-power-semiconductors
IPW80R290C3AFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V TO247
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
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