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BTS5240GNT BTS5240GNT Infineon Technologies BTS5240G.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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BTS5240LNT BTS5240LNT Infineon Technologies BTS5240L.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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BTS5434GNT BTS5434GNT Infineon Technologies BTS5434G.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-28
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-19
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS5440GNT BTS5440GNT Infineon Technologies BTS5440G.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-28
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TLE4305GNT Infineon Technologies TLE4305.pdf Description: IC SECONDARY SIDE CTRLR 8DSO
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TLE4473GV53NT TLE4473GV53NT Infineon Technologies TLE4473G_V52,53.pdf Description: IC REG LINEAR 3.3V/5V DSO12-11
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 265 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-DSO-12-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Obsolete
PSRR: 65dB (100Hz), 65dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
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BAT6402VH6327XTSA1 BAT6402VH6327XTSA1 Infineon Technologies Infineon-BAT64SERIES-DataSheet-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d73f85ab420ed Description: DIODE SCHOTTK 40V 250MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7081 шт:
термін постачання 21-31 дні (днів)
13+25.49 грн
24+13.30 грн
100+9.07 грн
500+7.31 грн
1000+6.54 грн
Мінімальне замовлення: 13
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BFP620H7764XTSA1 BFP620H7764XTSA1 Infineon Technologies Infineon-BFP620-DataSheet-v03_00-EN.pdf?fileId=5546d462689a790c01690f0396db3924 Description: RF TRANS NPN 2.8V 65GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 8699 шт:
термін постачання 21-31 дні (днів)
10+35.35 грн
14+24.23 грн
25+21.63 грн
100+17.62 грн
250+16.35 грн
500+15.58 грн
1000+14.79 грн
Мінімальне замовлення: 10
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BSP299H6327XUSA1 BSP299H6327XUSA1 Infineon Technologies Infineon-BSP299-DS-v02_04-en.pdf?fileId=db3a30433b47825b013b4c60b78c104c Description: MOSFET N-CH 500V 400MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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BSP373NH6327XTSA1 BSP373NH6327XTSA1 Infineon Technologies BSP373N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd8fc3bcf143f Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 218µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4417 шт:
термін постачання 21-31 дні (днів)
5+69.88 грн
10+42.20 грн
100+27.50 грн
500+19.89 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP88H6327XTSA1 BSP88H6327XTSA1 Infineon Technologies Infineon-BSP88-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4b657acf0ca8 Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8667 шт:
термін постачання 21-31 дні (днів)
7+48.51 грн
10+32.22 грн
100+22.34 грн
500+16.73 грн
Мінімальне замовлення: 7
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BSP92PH6327XTSA1 BSP92PH6327XTSA1 Infineon Technologies Infineon-BSP92P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b5fd12d3d575e Description: MOSFET P-CH 250V 260MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4921 шт:
термін постачання 21-31 дні (днів)
6+59.20 грн
10+36.89 грн
100+22.26 грн
500+18.13 грн
Мінімальне замовлення: 6
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BSS87H6327FTSA1 BSS87H6327FTSA1 Infineon Technologies Infineon-BSS87-DS-v01_42-en.pdf?fileId=db3a30433b47825b013b60b6e9436ddb Description: MOSFET N-CH 240V 260MA SOT89-4
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21705 шт:
термін постачання 21-31 дні (днів)
9+38.64 грн
13+24.94 грн
100+18.04 грн
500+14.57 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ESD5V5U5ULCE6327HTSA1 ESD5V5U5ULCE6327HTSA1 Infineon Technologies ESD5V5U5ULC_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304331a821aa0131b36e85a20560 Description: TVS DIODE 5.5VWM 12VC PGSC746
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 5
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
на замовлення 17600 шт:
термін постачання 21-31 дні (днів)
6+61.66 грн
10+36.74 грн
100+23.81 грн
500+17.13 грн
1000+15.44 грн
Мінімальне замовлення: 6
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IPD35N10S3L26ATMA1 IPD35N10S3L26ATMA1 Infineon Technologies Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t Description: MOSFET N-CH 100V 35A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8177 шт:
термін постачання 21-31 дні (днів)
5+78.93 грн
10+56.13 грн
100+51.40 грн
500+47.04 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD50N04S408ATMA1 IPD50N04S408ATMA1 Infineon Technologies Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45 Description: MOSFET N-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 17µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5799 шт:
термін постачання 21-31 дні (днів)
5+69.88 грн
10+41.96 грн
100+31.53 грн
500+24.73 грн
1000+22.44 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD50N06S4L12ATMA1 IPD50N06S4L12ATMA1 Infineon Technologies Infineon-IPD50N06S4L_12-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203885cc580ca0 Description: MOSFET N-CH 60V 50A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
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SLB9660TT12FW440XUMA5 Infineon Technologies Infineon-TPM+SLB+9660-DS-v12_14-EN.pdf?fileId=5546d4625185e0e201518b83ca013d6d Description: IC TPM 28TSSOP
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TLE42344GHTSA1 TLE42344GHTSA1 Infineon Technologies Infineon-TLE42344-DS-v01_00-en.pdf?folderId=db3a304314dca3890115039cf70d0bf0&fileId=db3a3043271faefd012775d687c115be&ack=t Description: IC REG LDO 5V 0.1A SOT223-4
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TLE4726GXUMA1 TLE4726GXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MTR DRV BIPOLR 4.5-6.5V 24DSO
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 6.5V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 50V
Supplier Device Package: PG-DSO-24-13
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
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TLE82092SAAUMA1 TLE82092SAAUMA1 Infineon Technologies Infineon-TLE8209-2SA-DS-v01_02-EN.pdf?fileId=5546d4624a0bf290014a0f5818836a1e Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushless DC (BLDC) Servo, Brushed DC Servo
Part Status: Active
Grade: Automotive
на замовлення 1591 шт:
термін постачання 21-31 дні (днів)
1+413.55 грн
10+304.89 грн
25+281.60 грн
100+240.26 грн
250+228.82 грн
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SLB9660TT12FW440XUMA5 Infineon Technologies Infineon-TPM+SLB+9660-DS-v12_14-EN.pdf?fileId=5546d4625185e0e201518b83ca013d6d Description: IC TPM 28TSSOP
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CY7C1370KV25-200AXC CY7C1370KV25-200AXC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370KV25-200BZC CY7C1370KV25-200BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1371KV33-100AXC CY7C1371KV33-100AXC Infineon Technologies Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1372KV25-167AXC CY7C1372KV25-167AXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1372KV33-167AXC CY7C1372KV33-167AXC Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1373KV33-133AXI CY7C1373KV33-133AXI Infineon Technologies Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
1+2500.21 грн
10+2226.54 грн
25+2155.08 грн
В кошику  од. на суму  грн.
CY7C1380KV33-167AXI CY7C1380KV33-167AXI Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 278 шт:
термін постачання 21-31 дні (днів)
1+3141.50 грн
10+2796.50 грн
25+2706.11 грн
72+2443.32 грн
144+2381.48 грн
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CY7C1380KV33-167BZI CY7C1380KV33-167BZI Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1381KV33-100BZXI CY7C1381KV33-100BZXI Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
1+2082.55 грн
10+1779.62 грн
25+1714.13 грн
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CY7C1381KV33-133AXC CY7C1381KV33-133AXC Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
1+2477.19 грн
10+2243.25 грн
25+2165.37 грн
72+1967.88 грн
144+1732.29 грн
В кошику  од. на суму  грн.
CY7C1381KV33-133AXI CY7C1381KV33-133AXI Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 422 шт:
термін постачання 21-31 дні (днів)
1+2424.57 грн
10+2159.80 грн
25+2090.48 грн
72+1887.84 грн
144+1840.22 грн
288+1793.46 грн
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CY7C1383KV33-133AXC CY7C1383KV33-133AXC Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1386KV33-167AXC CY7C1386KV33-167AXC Infineon Technologies Infineon-CY7C1386KV33_CY7C1387KV33_18-Mbit_(512_K_36_1_M_18)_Pipelined_DCD_Sync_SRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed9ec015b8b Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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MCETOOLV1 MCETOOLV1 Infineon Technologies MCETOOLV1.pdf Description: DEVELOPMENT KIT FOR 100-SERIES,
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IRF60R217 IRF60R217 Infineon Technologies irf60r217.pdf?fileId=5546d462533600a4015355e43be619cc Description: MOSFET N-CH 60V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+33.70 грн
Мінімальне замовлення: 2000
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IRL60S216 IRL60S216 Infineon Technologies irl60s216.pdf?fileId=5546d462533600a40153565fdf5b2570 Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
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IRF60R217 IRF60R217 Infineon Technologies irf60r217.pdf?fileId=5546d462533600a4015355e43be619cc Description: MOSFET N-CH 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
на замовлення 4255 шт:
термін постачання 21-31 дні (днів)
3+113.46 грн
10+75.53 грн
100+52.09 грн
500+40.38 грн
1000+37.28 грн
Мінімальне замовлення: 3
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IRL60S216 IRL60S216 Infineon Technologies irl60s216.pdf?fileId=5546d462533600a40153565fdf5b2570 Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
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PTFA092213FLV5R250XTMA1 PTFA092213FLV5R250XTMA1 Infineon Technologies PTFA092213EL_FL.pdf Description: IC FET RF LDMOS H-34288-6
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
товару немає в наявності
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PTFA092213FLV5XWSA1 Infineon Technologies PTFA092213EL_FL.pdf Description: IC FET RF LDMOS H-34288-4/2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
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PTFA192001E1V4R250XTMA1 PTFA192001E1V4R250XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC RF POWER TRANSISTOR
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PTFA192001E1V4XWSA1 PTFA192001E1V4XWSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: FET RF 65V 1.99GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 50W
Gain: 15.9dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.8 A
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PTFA212001F1V4R250XTMA1 Infineon Technologies Description: IC RF POWER TRANSISTOR
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PTFA212001F1V4XWSA1 Infineon Technologies Description: IC RF POWER TRANSISTOR
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PTFB082817FHV1R250XTMA1 Infineon Technologies PTFB082817FH.pdf Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
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PTFB082817FHV1S250XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
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PTFB082817FHV1XWSA1 Infineon Technologies PTFB082817FH.pdf Description: IC FET RF LDMOS H-34288
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
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PTFB093608FVV2S250XTMA1 Infineon Technologies Description: IC FET RF LDMOS H-362620-2
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PTFB192557SHV1R250XTMA1 Infineon Technologies PTFB192557SH.pdf Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tape & Reel (TR)
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
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PTFB192557SHV1XWSA1 Infineon Technologies PTFB192557SH.pdf Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tray
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
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PTFB193408SVV1R250XTMA1 Infineon Technologies PTFB193408SV.pdf Description: IC FET RF LDMOS H-34275G-6/2
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PTFB193408SVV1XWSA1 Infineon Technologies PTFB193408SV.pdf Description: IC FET RF LDMOS H-34275G-6/2
Packaging: Tray
Package / Case: H-34275G-6/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Configuration: Dual, Common Source
Power - Output: 80W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34275G-6/2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 2.65 A
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PTFB260605ELV1R250XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC FET RF LDMOS
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PTFB260605ELV1XWSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC FET RF LDMOS
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PTFB262406EV1XWSA1 Infineon Technologies Description: IC FET RF LDMOS
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PXAC261202FCV1R250XTMA1 Infineon Technologies PXAC261202FC.pdf Description: FET RF 2CH 65V 2.61GHZ
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PXAC261202FCV1S250XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tape & Reel (TR)
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
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PXAC261202FCV1XWSA1 Infineon Technologies PXAC261202FC.pdf Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tray
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
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BTS5240GNT BTS5240G.pdf
BTS5240GNT
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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BTS5240LNT BTS5240L.pdf
BTS5240LNT
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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BTS5434GNT BTS5434G.pdf
BTS5434GNT
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-28
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-19
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS5440GNT BTS5440G.pdf
BTS5440GNT
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-28
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TLE4305GNT TLE4305.pdf
Виробник: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8DSO
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TLE4473GV53NT TLE4473G_V52,53.pdf
TLE4473GV53NT
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO12-11
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 265 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-DSO-12-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Obsolete
PSRR: 65dB (100Hz), 65dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
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BAT6402VH6327XTSA1 Infineon-BAT64SERIES-DataSheet-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d73f85ab420ed
BAT6402VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTK 40V 250MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7081 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.49 грн
24+13.30 грн
100+9.07 грн
500+7.31 грн
1000+6.54 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BFP620H7764XTSA1 Infineon-BFP620-DataSheet-v03_00-EN.pdf?fileId=5546d462689a790c01690f0396db3924
BFP620H7764XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 2.8V 65GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 8699 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.35 грн
14+24.23 грн
25+21.63 грн
100+17.62 грн
250+16.35 грн
500+15.58 грн
1000+14.79 грн
Мінімальне замовлення: 10
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BSP299H6327XUSA1 Infineon-BSP299-DS-v02_04-en.pdf?fileId=db3a30433b47825b013b4c60b78c104c
BSP299H6327XUSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 400MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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BSP373NH6327XTSA1 BSP373N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd8fc3bcf143f
BSP373NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 218µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4417 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.88 грн
10+42.20 грн
100+27.50 грн
500+19.89 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP88H6327XTSA1 Infineon-BSP88-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4b657acf0ca8
BSP88H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8667 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+48.51 грн
10+32.22 грн
100+22.34 грн
500+16.73 грн
Мінімальне замовлення: 7
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BSP92PH6327XTSA1 Infineon-BSP92P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b5fd12d3d575e
BSP92PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 260MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4921 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.20 грн
10+36.89 грн
100+22.26 грн
500+18.13 грн
Мінімальне замовлення: 6
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BSS87H6327FTSA1 Infineon-BSS87-DS-v01_42-en.pdf?fileId=db3a30433b47825b013b60b6e9436ddb
BSS87H6327FTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 260MA SOT89-4
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21705 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.64 грн
13+24.94 грн
100+18.04 грн
500+14.57 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ESD5V5U5ULCE6327HTSA1 ESD5V5U5ULC_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304331a821aa0131b36e85a20560
ESD5V5U5ULCE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 12VC PGSC746
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 5
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
на замовлення 17600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.66 грн
10+36.74 грн
100+23.81 грн
500+17.13 грн
1000+15.44 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPD35N10S3L26ATMA1 Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t
IPD35N10S3L26ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8177 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.93 грн
10+56.13 грн
100+51.40 грн
500+47.04 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD50N04S408ATMA1 Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45
IPD50N04S408ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 17µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.88 грн
10+41.96 грн
100+31.53 грн
500+24.73 грн
1000+22.44 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD50N06S4L12ATMA1 Infineon-IPD50N06S4L_12-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203885cc580ca0
IPD50N06S4L12ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
товару немає в наявності
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SLB9660TT12FW440XUMA5 Infineon-TPM+SLB+9660-DS-v12_14-EN.pdf?fileId=5546d4625185e0e201518b83ca013d6d
Виробник: Infineon Technologies
Description: IC TPM 28TSSOP
товару немає в наявності
В кошику  од. на суму  грн.
TLE42344GHTSA1 Infineon-TLE42344-DS-v01_00-en.pdf?folderId=db3a304314dca3890115039cf70d0bf0&fileId=db3a3043271faefd012775d687c115be&ack=t
TLE42344GHTSA1
Виробник: Infineon Technologies
Description: IC REG LDO 5V 0.1A SOT223-4
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TLE4726GXUMA1 Part_Number_Guide_Web.pdf
TLE4726GXUMA1
Виробник: Infineon Technologies
Description: IC MTR DRV BIPOLR 4.5-6.5V 24DSO
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 6.5V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 50V
Supplier Device Package: PG-DSO-24-13
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
товару немає в наявності
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TLE82092SAAUMA1 Infineon-TLE8209-2SA-DS-v01_02-EN.pdf?fileId=5546d4624a0bf290014a0f5818836a1e
TLE82092SAAUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushless DC (BLDC) Servo, Brushed DC Servo
Part Status: Active
Grade: Automotive
на замовлення 1591 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+413.55 грн
10+304.89 грн
25+281.60 грн
100+240.26 грн
250+228.82 грн
В кошику  од. на суму  грн.
SLB9660TT12FW440XUMA5 Infineon-TPM+SLB+9660-DS-v12_14-EN.pdf?fileId=5546d4625185e0e201518b83ca013d6d
Виробник: Infineon Technologies
Description: IC TPM 28TSSOP
товару немає в наявності
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CY7C1370KV25-200AXC download
CY7C1370KV25-200AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370KV25-200BZC download
CY7C1370KV25-200BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1371KV33-100AXC Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
CY7C1371KV33-100AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1372KV25-167AXC download
CY7C1372KV25-167AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1372KV33-167AXC Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1372KV33-167AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1373KV33-133AXI Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
CY7C1373KV33-133AXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2500.21 грн
10+2226.54 грн
25+2155.08 грн
В кошику  од. на суму  грн.
CY7C1380KV33-167AXI download
CY7C1380KV33-167AXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 278 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3141.50 грн
10+2796.50 грн
25+2706.11 грн
72+2443.32 грн
144+2381.48 грн
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CY7C1380KV33-167BZI download
CY7C1380KV33-167BZI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1381KV33-100BZXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1381KV33-100BZXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2082.55 грн
10+1779.62 грн
25+1714.13 грн
В кошику  од. на суму  грн.
CY7C1381KV33-133AXC Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1381KV33-133AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2477.19 грн
10+2243.25 грн
25+2165.37 грн
72+1967.88 грн
144+1732.29 грн
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CY7C1381KV33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1381KV33-133AXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 422 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2424.57 грн
10+2159.80 грн
25+2090.48 грн
72+1887.84 грн
144+1840.22 грн
288+1793.46 грн
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CY7C1383KV33-133AXC Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1383KV33-133AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1386KV33-167AXC Infineon-CY7C1386KV33_CY7C1387KV33_18-Mbit_(512_K_36_1_M_18)_Pipelined_DCD_Sync_SRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed9ec015b8b
CY7C1386KV33-167AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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MCETOOLV1 MCETOOLV1.pdf
MCETOOLV1
Виробник: Infineon Technologies
Description: DEVELOPMENT KIT FOR 100-SERIES,
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IRF60R217 irf60r217.pdf?fileId=5546d462533600a4015355e43be619cc
IRF60R217
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+33.70 грн
Мінімальне замовлення: 2000
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IRL60S216 irl60s216.pdf?fileId=5546d462533600a40153565fdf5b2570
IRL60S216
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
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IRF60R217 irf60r217.pdf?fileId=5546d462533600a4015355e43be619cc
IRF60R217
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
на замовлення 4255 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.46 грн
10+75.53 грн
100+52.09 грн
500+40.38 грн
1000+37.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRL60S216 irl60s216.pdf?fileId=5546d462533600a40153565fdf5b2570
IRL60S216
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
товару немає в наявності
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PTFA092213FLV5R250XTMA1 PTFA092213EL_FL.pdf
PTFA092213FLV5R250XTMA1
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288-6
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
товару немає в наявності
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PTFA092213FLV5XWSA1 PTFA092213EL_FL.pdf
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288-4/2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
товару немає в наявності
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PTFA192001E1V4R250XTMA1 Part_Number_Guide_Web.pdf
PTFA192001E1V4R250XTMA1
Виробник: Infineon Technologies
Description: IC RF POWER TRANSISTOR
товару немає в наявності
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PTFA192001E1V4XWSA1 Part_Number_Guide_Web.pdf
PTFA192001E1V4XWSA1
Виробник: Infineon Technologies
Description: FET RF 65V 1.99GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 50W
Gain: 15.9dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.8 A
товару немає в наявності
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PTFA212001F1V4R250XTMA1
Виробник: Infineon Technologies
Description: IC RF POWER TRANSISTOR
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PTFA212001F1V4XWSA1
Виробник: Infineon Technologies
Description: IC RF POWER TRANSISTOR
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PTFB082817FHV1R250XTMA1 PTFB082817FH.pdf
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
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PTFB082817FHV1S250XTMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
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PTFB082817FHV1XWSA1 PTFB082817FH.pdf
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
товару немає в наявності
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PTFB093608FVV2S250XTMA1
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-362620-2
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PTFB192557SHV1R250XTMA1 PTFB192557SH.pdf
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tape & Reel (TR)
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
товару немає в наявності
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PTFB192557SHV1XWSA1 PTFB192557SH.pdf
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tray
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
товару немає в наявності
В кошику  од. на суму  грн.
PTFB193408SVV1R250XTMA1 PTFB193408SV.pdf
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34275G-6/2
товару немає в наявності
В кошику  од. на суму  грн.
PTFB193408SVV1XWSA1 PTFB193408SV.pdf
Виробник: Infineon Technologies
Description: IC FET RF LDMOS H-34275G-6/2
Packaging: Tray
Package / Case: H-34275G-6/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Configuration: Dual, Common Source
Power - Output: 80W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34275G-6/2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 2.65 A
товару немає в наявності
В кошику  од. на суму  грн.
PTFB260605ELV1R250XTMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC FET RF LDMOS
товару немає в наявності
В кошику  од. на суму  грн.
PTFB260605ELV1XWSA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC FET RF LDMOS
товару немає в наявності
В кошику  од. на суму  грн.
PTFB262406EV1XWSA1
Виробник: Infineon Technologies
Description: IC FET RF LDMOS
товару немає в наявності
В кошику  од. на суму  грн.
PXAC261202FCV1R250XTMA1 PXAC261202FC.pdf
Виробник: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
товару немає в наявності
В кошику  од. на суму  грн.
PXAC261202FCV1S250XTMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tape & Reel (TR)
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
товару немає в наявності
В кошику  од. на суму  грн.
PXAC261202FCV1XWSA1 PXAC261202FC.pdf
Виробник: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tray
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
товару немає в наявності
В кошику  од. на суму  грн.
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