Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117828) > Сторінка 274 з 1964

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IPP90N06S4L04AKSA2 IPP90N06S4L04AKSA2 Infineon Technologies Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3 Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPI80N06S4L05AKSA2 IPI80N06S4L05AKSA2 Infineon Technologies Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07 Description: MOSFET N-CH TO262-3
товару немає в наявності
В кошику  од. на суму  грн.
IPP80N06S4L05AKSA2 IPP80N06S4L05AKSA2 Infineon Technologies Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07 Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 40A, 4.5V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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S29GL01GT10FHI010 S29GL01GT10FHI010 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Verified
на замовлення 2619 шт:
термін постачання 21-31 дні (днів)
1+1189.13 грн
10+1062.46 грн
25+1029.28 грн
50+942.51 грн
180+899.78 грн
360+877.10 грн
540+849.85 грн
В кошику  од. на суму  грн.
S29GL01GT10FHI020 S29GL01GT10FHI020 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Verified
на замовлення 1273 шт:
термін постачання 21-31 дні (днів)
1+1189.13 грн
10+1062.46 грн
25+1029.28 грн
50+942.51 грн
180+899.78 грн
360+877.10 грн
540+849.85 грн
В кошику  од. на суму  грн.
IR11688STRPBF IR11688STRPBF Infineon Technologies ir11688spbf.pdf?fileId=5546d462533600a4015355c47c70165c Description: DUAL SYNCHRONOUS RECTIFICATION C
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 13 mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR11688STRPBF IR11688STRPBF Infineon Technologies ir11688spbf.pdf?fileId=5546d462533600a4015355c47c70165c Description: DUAL SYNCHRONOUS RECTIFICATION C
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 13 mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR1161LTRPBF IR1161LTRPBF Infineon Technologies ir1161lpbf.pdf?fileId=5546d462533600a4015355c439a5164d Description: SYNCRONOUS RECTIFIER CONTROL IC
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: PG-SOT23-5
Part Status: Not For New Designs
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+40.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IR1161LTRPBF IR1161LTRPBF Infineon Technologies ir1161lpbf.pdf?fileId=5546d462533600a4015355c439a5164d Description: SYNCRONOUS RECTIFIER CONTROL IC
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: PG-SOT23-5
Part Status: Not For New Designs
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
на замовлення 19693 шт:
термін постачання 21-31 дні (днів)
4+92.56 грн
10+64.51 грн
25+58.49 грн
100+48.65 грн
250+45.68 грн
500+43.89 грн
1000+41.72 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFC3306EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 60V DIE ON WAFER
Packaging: Bulk
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В кошику  од. на суму  грн.
IRFC4010EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 100V DIE ON WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4115EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 150V DIE ON WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4310EF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 100V DIE ON FILM
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
2EDN7523FXTMA1 2EDN7523FXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2120 шт:
термін постачання 21-31 дні (днів)
6+54.12 грн
10+36.78 грн
25+33.11 грн
100+27.26 грн
250+25.44 грн
500+24.34 грн
1000+23.05 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2EDN7523RXUMA1 2EDN7523RXUMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
2EDN7524FXTMA1 2EDN7524FXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-60
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 11653 шт:
термін постачання 21-31 дні (днів)
6+54.12 грн
10+36.94 грн
25+33.23 грн
100+27.35 грн
250+25.52 грн
500+24.42 грн
1000+23.13 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2EDN8523FXTMA1 2EDN8523FXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
2EDN8524FXTMA1 2EDN8524FXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
6+56.48 грн
10+38.98 грн
25+35.11 грн
100+28.91 грн
250+26.98 грн
500+25.82 грн
1000+24.47 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DPS310XTSA1 DPS310XTSA1 Infineon Technologies Infineon-DPS310-DS-v01_00-EN.pdf?fileId=5546d462576f34750157750826c42242 Description: SENSOR 17.4PSIA 24BIT 8VLGA
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Absolute
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N06S4L23ATMA2 IPD30N06S4L23ATMA2 Infineon Technologies Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5 Description: MOSFET N-CH 60V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N06S4L12ATMA2 IPD50N06S4L12ATMA2 Infineon Technologies Infineon-IPD50N06S4L_12-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203885cc580ca0 Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
2500+28.00 грн
5000+24.99 грн
7500+23.98 грн
12500+21.44 грн
17500+20.81 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD30N06S4L23ATMA2 IPD30N06S4L23ATMA2 Infineon Technologies Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5 Description: MOSFET N-CH 60V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1411 шт:
термін постачання 21-31 дні (днів)
4+92.56 грн
10+55.90 грн
100+37.01 грн
500+27.13 грн
1000+24.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD50N06S4L12ATMA2 IPD50N06S4L12ATMA2 Infineon Technologies Infineon-IPD50N06S4L_12-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203885cc580ca0 Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 23987 шт:
термін постачання 21-31 дні (днів)
4+104.32 грн
10+63.68 грн
100+42.30 грн
500+31.08 грн
1000+28.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD25N06S4L30ATMA2 IPD25N06S4L30ATMA2 Infineon Technologies Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa Description: MOSFET N-CH 60V 25A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+22.84 грн
5000+20.34 грн
7500+19.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPI80N06S407AKSA2 IPI80N06S407AKSA2 Infineon Technologies Infineon-I80N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038dc68c00cf5 Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+167.86 грн
50+79.42 грн
100+71.42 грн
500+53.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP120N06S4H1AKSA2 IPP120N06S4H1AKSA2 Infineon Technologies IPx120N06S4-H1.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N06S407AKSA2 IPP80N06S407AKSA2 Infineon Technologies Infineon-I80N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038dc68c00cf5 Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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TLE72422GXUMA2 TLE72422GXUMA2 Infineon Technologies Infineon-TLE7242_2G-DS-v01_01-en.pdf?folderId=db3a30431400ef68011421b54e2e0564&fileId=db3a30431ed1d7b2011eee8d146f5480&ack=t Description: IC CURRENT SOURCE DSO28
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-DSO-28
Part Status: Last Time Buy
товару немає в наявності
В кошику  од. на суму  грн.
TLE72422GXUMA2 TLE72422GXUMA2 Infineon Technologies Infineon-TLE7242_2G-DS-v01_01-en.pdf?folderId=db3a30431400ef68011421b54e2e0564&fileId=db3a30431ed1d7b2011eee8d146f5480&ack=t Description: IC CURRENT SOURCE DSO28
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-DSO-28
Part Status: Last Time Buy
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+880.87 грн
10+766.37 грн
25+730.68 грн
100+595.40 грн
250+568.64 грн
500+518.47 грн
В кошику  од. на суму  грн.
IDC04S60CEX1SA1 Infineon Technologies IDC04S60CE.pdf Description: DIODE SIC 600V 4A SAWN WAFER
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IDC04S60CEX7SA1 Infineon Technologies IDC04S60CE.pdf Description: DIODE GEN PURPOSE SAWN WAFER
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IDC08S60CEX1SA2 Infineon Technologies IDC08S60CE.pdf Description: DIODE SIL CARBIDE 600V 8A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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IDC08S60CEX1SA3 Infineon Technologies IDC08S60CE.pdf Description: DIODE SIL CARBIDE 600V 8A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
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IDC08S60CEX7SA1 Infineon Technologies IDC08S60CE.pdf Description: DIODE SIL CARBIDE 600V 8A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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PTFB211803ELV1R0XTMA1 Infineon Technologies PTFB211803EL,FL.pdf Description: IC AMP RF LDMOS H-33288-6
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ICE2PCS03GXT ICE2PCS03GXT Infineon Technologies INFNS16598-1.pdf Description: IC PFC CTRLR CCM 100KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Current - Startup: 450 µA
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ICE2PCS04GXT ICE2PCS04GXT Infineon Technologies ICE2PCS04_G.pdf Description: IC PFC CTRLR CCM 133KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 133kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Current - Startup: 450 µA
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TLE9831QVXUMA1 TLE9831QVXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MOTOR DRIVER 48VQFN
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TLE9832QX TLE9832QX Infineon Technologies TLE9832.pdf Description: IC MOTOR DRIVER 48VQFN
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TLE9832QXXUMA2 TLE9832QXXUMA2 Infineon Technologies TLE9832.pdf Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (36kB)
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 11
DigiKey Programmable: Not Verified
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TLE9832QXXUMA3 TLE9832QXXUMA3 Infineon Technologies TLE9832.pdf Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (36kB)
Applications: Automotive
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 11
DigiKey Programmable: Not Verified
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TLE9833QXXUMA2 TLE9833QXXUMA2 Infineon Technologies TLE9833QX.pdf Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (48kB)
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 11
DigiKey Programmable: Not Verified
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TLE9834QXXUMA1 TLE9834QXXUMA1 Infineon Technologies TLE9834QX.pdf Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (64kB)
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 11
DigiKey Programmable: Not Verified
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TLE98442QXXUMA1 TLE98442QXXUMA1 Infineon Technologies Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509 Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+149.08 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DD1200S33KL2CB5NOSA1 DD1200S33KL2CB5NOSA1 Infineon Technologies DD1200S33KL2C_B5.pdf Description: DIODE MOD GP 3300V 1200A MOD
Packaging: Tray
Package / Case: Block, 4 Lead
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1200A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A
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ICE3BR1065JXKLA1 ICE3BR1065JXKLA1 Infineon Technologies ICE3BR1065J.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-8
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 62 W
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BGS18GA14E6327XTSA1 BGS18GA14E6327XTSA1 Infineon Technologies Infineon-BGS18GA14-DS-v03_00-EN.pdf?fileId=5546d46253f6505701543e060bd6475b Description: IC RF SWITCH SP8T 3.8GHZ ATSLP14
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP8T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.7dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3.5GHz
Isolation: 33dB
Supplier Device Package: ATSLP-14-4
Part Status: Obsolete
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ESD119B1W01005E6327XTSA1 ESD119B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD119-B1-W01005-DS-v01_02-EN.pdf?fileId=5546d462503812bb0150854d53764ca0 Description: TVS DIODE 5.5VWM 14VC P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 35W
Power Line Protection: No
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ESD128B1W0201E6327XTSA1 ESD128B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD128-B1-W0201-DS-v01_03-EN.pdf?fileId=5546d462503812bb0150854d5b4e4ca3 Description: TVS DIODE 13VWM 18.5VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power - Peak Pulse: 53W
Power Line Protection: No
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
15000+1.53 грн
30000+1.45 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD231B1W0201E6327XTSA1 ESD231B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD231-B1-W0201-DS-v01_01-EN.pdf?fileId=5546d462503812bb0150854d4bac4c9d Description: TVS DIODE 5.5VWM 10VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 3.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 132W
Power Line Protection: No
на замовлення 170500 шт:
термін постачання 21-31 дні (днів)
15000+2.31 грн
30000+2.02 грн
45000+1.92 грн
75000+1.69 грн
105000+1.62 грн
150000+1.56 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
IKD03N60RFATMA1 IKD03N60RFATMA1 Infineon Technologies Infineon-IKD03N60RF-DS-v02_06-EN.pdf?fileId=db3a30433c5c92fb013c5d3978350068 Description: IGBT TRENCH/FS 600V 6.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
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IKD04N60RATMA1 IKD04N60RATMA1 Infineon Technologies Infineon-IKD04N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5d927b3e01a0 Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+25.24 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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IKD10N60RATMA1 IKD10N60RATMA1 Infineon Technologies Infineon-IKD10N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5df8088c02fd Description: IGBT TRENCH FS 600V 20A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/192ns
Switching Energy: 210µJ (on), 380µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
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IKD15N60RATMA1 IKD15N60RATMA1 Infineon Technologies Infineon-IKD15N60R-DS-v02_04-en.pdf?fileId=db3a30433c5c92fb013c5e03026003b2 Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+45.25 грн
5000+40.71 грн
7500+39.25 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IR44252LTRPBF IR44252LTRPBF Infineon Technologies ir44252l.pdf?fileId=5546d462533600a4015364c51e8e2a38 Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-5
Rise / Fall Time (Typ): 85ns, 40ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.6V, 2.7V
Current - Peak Output (Source, Sink): 300mA, 550mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR44272LTRPBF IR44272LTRPBF Infineon Technologies Infineon-IR44272L-DS-v01_00-EN.pdf Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-5
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.6V, 2.7V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR44273LTRPBF IR44273LTRPBF Infineon Technologies Infineon-IR44273L-DS-v01_01-EN.pdf Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-5
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.6V, 2.7V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRS2005MTRPBF IRS2005MTRPBF Infineon Technologies infineon-irs2005s-m-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+33.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRS2005STRPBF IRS2005STRPBF Infineon Technologies infineon-irs2005s-m-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
2500+26.11 грн
5000+24.51 грн
7500+24.19 грн
12500+22.37 грн
17500+22.18 грн
25000+21.99 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPP90N06S4L04AKSA2 Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3
IPP90N06S4L04AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPI80N06S4L05AKSA2 Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07
IPI80N06S4L05AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH TO262-3
товару немає в наявності
В кошику  од. на суму  грн.
IPP80N06S4L05AKSA2 Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07
IPP80N06S4L05AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 40A, 4.5V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GT10FHI010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT10FHI010
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Verified
на замовлення 2619 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1189.13 грн
10+1062.46 грн
25+1029.28 грн
50+942.51 грн
180+899.78 грн
360+877.10 грн
540+849.85 грн
В кошику  од. на суму  грн.
S29GL01GT10FHI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT10FHI020
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Verified
на замовлення 1273 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1189.13 грн
10+1062.46 грн
25+1029.28 грн
50+942.51 грн
180+899.78 грн
360+877.10 грн
540+849.85 грн
В кошику  од. на суму  грн.
IR11688STRPBF ir11688spbf.pdf?fileId=5546d462533600a4015355c47c70165c
IR11688STRPBF
Виробник: Infineon Technologies
Description: DUAL SYNCHRONOUS RECTIFICATION C
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 13 mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR11688STRPBF ir11688spbf.pdf?fileId=5546d462533600a4015355c47c70165c
IR11688STRPBF
Виробник: Infineon Technologies
Description: DUAL SYNCHRONOUS RECTIFICATION C
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 13 mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR1161LTRPBF ir1161lpbf.pdf?fileId=5546d462533600a4015355c439a5164d
IR1161LTRPBF
Виробник: Infineon Technologies
Description: SYNCRONOUS RECTIFIER CONTROL IC
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: PG-SOT23-5
Part Status: Not For New Designs
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+40.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IR1161LTRPBF ir1161lpbf.pdf?fileId=5546d462533600a4015355c439a5164d
IR1161LTRPBF
Виробник: Infineon Technologies
Description: SYNCRONOUS RECTIFIER CONTROL IC
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: PG-SOT23-5
Part Status: Not For New Designs
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
на замовлення 19693 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.56 грн
10+64.51 грн
25+58.49 грн
100+48.65 грн
250+45.68 грн
500+43.89 грн
1000+41.72 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFC3306EB IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V DIE ON WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4010EB IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V DIE ON WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4115EB IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V DIE ON WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4310EF IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V DIE ON FILM
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
2EDN7523FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7523FXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+54.12 грн
10+36.78 грн
25+33.11 грн
100+27.26 грн
250+25.44 грн
500+24.34 грн
1000+23.05 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2EDN7523RXUMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7523RXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
2EDN7524FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7524FXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-60
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 11653 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+54.12 грн
10+36.94 грн
25+33.23 грн
100+27.35 грн
250+25.52 грн
500+24.42 грн
1000+23.13 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2EDN8523FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8523FXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
2EDN8524FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524FXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.48 грн
10+38.98 грн
25+35.11 грн
100+28.91 грн
250+26.98 грн
500+25.82 грн
1000+24.47 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DPS310XTSA1 Infineon-DPS310-DS-v01_00-EN.pdf?fileId=5546d462576f34750157750826c42242
DPS310XTSA1
Виробник: Infineon Technologies
Description: SENSOR 17.4PSIA 24BIT 8VLGA
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Absolute
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
товару немає в наявності
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IPD30N06S4L23ATMA2 Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5
IPD30N06S4L23ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPD50N06S4L12ATMA2 Infineon-IPD50N06S4L_12-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203885cc580ca0
IPD50N06S4L12ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+28.00 грн
5000+24.99 грн
7500+23.98 грн
12500+21.44 грн
17500+20.81 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD30N06S4L23ATMA2 Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5
IPD30N06S4L23ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1411 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.56 грн
10+55.90 грн
100+37.01 грн
500+27.13 грн
1000+24.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD50N06S4L12ATMA2 Infineon-IPD50N06S4L_12-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203885cc580ca0
IPD50N06S4L12ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 23987 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.32 грн
10+63.68 грн
100+42.30 грн
500+31.08 грн
1000+28.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD25N06S4L30ATMA2 Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa
IPD25N06S4L30ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 25A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+22.84 грн
5000+20.34 грн
7500+19.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPI80N06S407AKSA2 Infineon-I80N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038dc68c00cf5
IPI80N06S407AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+167.86 грн
50+79.42 грн
100+71.42 грн
500+53.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP120N06S4H1AKSA2 IPx120N06S4-H1.pdf
IPP120N06S4H1AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPP80N06S407AKSA2 Infineon-I80N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038dc68c00cf5
IPP80N06S407AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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TLE72422GXUMA2 Infineon-TLE7242_2G-DS-v01_01-en.pdf?folderId=db3a30431400ef68011421b54e2e0564&fileId=db3a30431ed1d7b2011eee8d146f5480&ack=t
TLE72422GXUMA2
Виробник: Infineon Technologies
Description: IC CURRENT SOURCE DSO28
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-DSO-28
Part Status: Last Time Buy
товару немає в наявності
В кошику  од. на суму  грн.
TLE72422GXUMA2 Infineon-TLE7242_2G-DS-v01_01-en.pdf?folderId=db3a30431400ef68011421b54e2e0564&fileId=db3a30431ed1d7b2011eee8d146f5480&ack=t
TLE72422GXUMA2
Виробник: Infineon Technologies
Description: IC CURRENT SOURCE DSO28
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-DSO-28
Part Status: Last Time Buy
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+880.87 грн
10+766.37 грн
25+730.68 грн
100+595.40 грн
250+568.64 грн
500+518.47 грн
В кошику  од. на суму  грн.
IDC04S60CEX1SA1 IDC04S60CE.pdf
Виробник: Infineon Technologies
Description: DIODE SIC 600V 4A SAWN WAFER
товару немає в наявності
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IDC04S60CEX7SA1 IDC04S60CE.pdf
Виробник: Infineon Technologies
Description: DIODE GEN PURPOSE SAWN WAFER
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IDC08S60CEX1SA2 IDC08S60CE.pdf
Виробник: Infineon Technologies
Description: DIODE SIL CARBIDE 600V 8A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
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IDC08S60CEX1SA3 IDC08S60CE.pdf
Виробник: Infineon Technologies
Description: DIODE SIL CARBIDE 600V 8A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
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IDC08S60CEX7SA1 IDC08S60CE.pdf
Виробник: Infineon Technologies
Description: DIODE SIL CARBIDE 600V 8A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
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PTFB211803ELV1R0XTMA1 PTFB211803EL,FL.pdf
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS H-33288-6
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ICE2PCS03GXT INFNS16598-1.pdf
ICE2PCS03GXT
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 100KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Current - Startup: 450 µA
товару немає в наявності
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ICE2PCS04GXT ICE2PCS04_G.pdf
ICE2PCS04GXT
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 133KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 133kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Current - Startup: 450 µA
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TLE9831QVXUMA1 Part_Number_Guide_Web.pdf
TLE9831QVXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
товару немає в наявності
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TLE9832QX TLE9832.pdf
TLE9832QX
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
товару немає в наявності
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TLE9832QXXUMA2 TLE9832.pdf
TLE9832QXXUMA2
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (36kB)
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 11
DigiKey Programmable: Not Verified
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TLE9832QXXUMA3 TLE9832.pdf
TLE9832QXXUMA3
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (36kB)
Applications: Automotive
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 11
DigiKey Programmable: Not Verified
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TLE9833QXXUMA2 TLE9833QX.pdf
TLE9833QXXUMA2
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (48kB)
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 11
DigiKey Programmable: Not Verified
товару немає в наявності
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TLE9834QXXUMA1 TLE9834QX.pdf
TLE9834QXXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (64kB)
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 11
DigiKey Programmable: Not Verified
товару немає в наявності
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TLE98442QXXUMA1 Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509
TLE98442QXXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+149.08 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DD1200S33KL2CB5NOSA1 DD1200S33KL2C_B5.pdf
DD1200S33KL2CB5NOSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 3300V 1200A MOD
Packaging: Tray
Package / Case: Block, 4 Lead
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1200A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A
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ICE3BR1065JXKLA1 ICE3BR1065J.pdf
ICE3BR1065JXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-8
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 62 W
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BGS18GA14E6327XTSA1 Infineon-BGS18GA14-DS-v03_00-EN.pdf?fileId=5546d46253f6505701543e060bd6475b
BGS18GA14E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP8T 3.8GHZ ATSLP14
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP8T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.7dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3.5GHz
Isolation: 33dB
Supplier Device Package: ATSLP-14-4
Part Status: Obsolete
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ESD119B1W01005E6327XTSA1 Infineon-ESD119-B1-W01005-DS-v01_02-EN.pdf?fileId=5546d462503812bb0150854d53764ca0
ESD119B1W01005E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 35W
Power Line Protection: No
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ESD128B1W0201E6327XTSA1 Infineon-ESD128-B1-W0201-DS-v01_03-EN.pdf?fileId=5546d462503812bb0150854d5b4e4ca3
ESD128B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 13VWM 18.5VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power - Peak Pulse: 53W
Power Line Protection: No
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+1.53 грн
30000+1.45 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD231B1W0201E6327XTSA1 Infineon-ESD231-B1-W0201-DS-v01_01-EN.pdf?fileId=5546d462503812bb0150854d4bac4c9d
ESD231B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 10VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 3.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 132W
Power Line Protection: No
на замовлення 170500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+2.31 грн
30000+2.02 грн
45000+1.92 грн
75000+1.69 грн
105000+1.62 грн
150000+1.56 грн
Мінімальне замовлення: 15000
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IKD03N60RFATMA1 Infineon-IKD03N60RF-DS-v02_06-EN.pdf?fileId=db3a30433c5c92fb013c5d3978350068
IKD03N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH/FS 600V 6.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
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IKD04N60RATMA1 Infineon-IKD04N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5d927b3e01a0
IKD04N60RATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.24 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IKD06N60RATMA1 Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6
IKD06N60RATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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IKD10N60RATMA1 Infineon-IKD10N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5df8088c02fd
IKD10N60RATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 20A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/192ns
Switching Energy: 210µJ (on), 380µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
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IKD15N60RATMA1 Infineon-IKD15N60R-DS-v02_04-en.pdf?fileId=db3a30433c5c92fb013c5e03026003b2
IKD15N60RATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+45.25 грн
5000+40.71 грн
7500+39.25 грн
Мінімальне замовлення: 2500
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IR44252LTRPBF ir44252l.pdf?fileId=5546d462533600a4015364c51e8e2a38
IR44252LTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-5
Rise / Fall Time (Typ): 85ns, 40ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.6V, 2.7V
Current - Peak Output (Source, Sink): 300mA, 550mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR44272LTRPBF Infineon-IR44272L-DS-v01_00-EN.pdf
IR44272LTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-5
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.6V, 2.7V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR44273LTRPBF Infineon-IR44273L-DS-v01_01-EN.pdf
IR44273LTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-5
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.6V, 2.7V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS2005MTRPBF infineon-irs2005s-m-datasheet-en.pdf
IRS2005MTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+33.36 грн
Мінімальне замовлення: 3000
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IRS2005STRPBF infineon-irs2005s-m-datasheet-en.pdf
IRS2005STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+26.11 грн
5000+24.51 грн
7500+24.19 грн
12500+22.37 грн
17500+22.18 грн
25000+21.99 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
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